CN114023876B - HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof - Google Patents

HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof Download PDF

Info

Publication number
CN114023876B
CN114023876B CN202111270628.XA CN202111270628A CN114023876B CN 114023876 B CN114023876 B CN 114023876B CN 202111270628 A CN202111270628 A CN 202111270628A CN 114023876 B CN114023876 B CN 114023876B
Authority
CN
China
Prior art keywords
superlattice
functional
hfo
layer
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111270628.XA
Other languages
Chinese (zh)
Other versions
CN114023876A (en
Inventor
孙华军
白娜
王文琳
缪向水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huazhong University of Science and Technology
Original Assignee
Huazhong University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huazhong University of Science and Technology filed Critical Huazhong University of Science and Technology
Priority to CN202111270628.XA priority Critical patent/CN114023876B/en
Priority to PCT/CN2021/130012 priority patent/WO2023070748A1/en
Publication of CN114023876A publication Critical patent/CN114023876A/en
Application granted granted Critical
Publication of CN114023876B publication Critical patent/CN114023876B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)

Abstract

The invention belongs to the technical field of microelectronic devices, and discloses a superlattice ferroelectric memristor, which comprises a lower electrode layer, a functional layer and an upper electrode layer which are sequentially stacked from bottom to top, wherein the functional layer is a superlattice functional layer formed by at least one superlattice unit, and each superlattice unit is formed by sequentially stacking a first functional material and a second functional material from bottom to top; the thickness of any sub-functional layer formed by the first functional material or the second functional material in the functional layer is 0.6-5nm; the first functional material is HfO 2 The second functional material is ZrO 2 Or Al 2 O 3 . The invention is different from the traditional metal doped HfO by improving the structure and the composition of the functional layer of the device 2 Base ferroelectric memristor adopting stacked growth superlattice HfO 2 Layer and ZrO 2 Layer (or Al) 2 O 3 The layer) is used as a ferroelectric memristor functional layer, and has good ferroelectricity and memristance.

Description

HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof
Technical Field
The invention belongs to the technical field of microelectronic devices, and particularly relates to a device based on HfO 2 /ZrO 2 Or HfO 2 /Al 2 O 3 The superlattice ferroelectric memristor and the preparation method thereof have the advantages of high dielectric constant, low interface trap charge, high thermal stability and the like, are beneficial to increasing the ferroelectric phase content of the device film, promoting the polarization inversion of the film and improving the ferroelectric performance of the device. In this wayAt the same time, hfO 2 With ZrO 2 (or Al) 2 O 3 ) Oxygen vacancy defects and potential barriers exist between the subfunction layers, so that the device has excellent memristive characteristics.
Background
The advent of the post-molar age has been accompanied by a gradual trend toward physical limits in component size miniaturization, resulting in increased device cost, speed, and power consumption. The number of memory cells for data is much lower than that of the processing cells, and the frequent exchange between memory speeds introduces delays and power consumption, resulting in the memory wall and power wall problems of von neumann bottlenecks. The preparation of a non-volatile memory device with low power consumption, stable performance and suitability for 'memory integration' is the best solution to break through von neumann bottleneck.
Ferroelectric memory is used as an emerging memory technology, and the electric polarization of the device is turned over by applying an external electric field so as to achieve the aim of nonvolatile memory of the device. The memory has wide application potential in the fields of storage, logic operation, neural network calculation and the like because of the advantages of high read-write speed, low power consumption, compatibility with the traditional CMOS process and the like. Traditional ferroelectric material PbZrTiO 3 And BaTiO 3 Applications in silicon-based MOSFET devices have been realized, but there are problems with CMOS compatibility and reduced device size-ferroelectric degradation. HfO (HfO) 2 And ZrO(s) 2 As a high-K material, it is considered to be an ideal high-dielectric material compatible with CMOS.
HfO 2 Monoclinic, tetragonal and cubic phases exist, respectively. Pure HfO 2 For the stable existence of monoclinic phase, its atomic center symmetry results in films without ferroelectric properties. The transformation between different phases can be realized through annealing, doping and the like, so that non-centrosymmetric tetragonal phase and cubic phase are formed, and further the ferroelectric property of the device is realized. Michael Hoffmann et al (M.Hoffmann, nano energy.18, (2015)) doped HfO with Si 2 Is obtained by a method of obtaining a polarization intensity of 10uC/cm 2 Is a ferroelectric device of (a). Stefan Mueller et Al (Mueller, S, adv. Funct. Mater.22:2412-2417, 2012) produce Al-doped HfO 2 Is 5uC/cm 2 Is a ferroelectric device of (a). However, the dielectric constants of Si, al and other elements are low, which leads to oxygenThe dielectric constant of the hafnium oxide film is reduced, more defects are caused in the film due to lattice mismatch due to doping of different concentrations, the leakage current of the device is increased, the device cannot form stable tetragonal/cubic hafnium oxide, and the ferroelectric performance is weak. Therefore, it is important to make ferroelectric devices with high dielectric constant, low leakage current and stable ferroelectric properties.
On the other hand, the superlattice material is a multilayer film in which two materials having a high degree of lattice matching alternately grow in thin layers of several nanometers to several tens of nanometers and maintain a strict periodic arrangement. Due to the unique quantum mechanical effect of the superlattice, the phase change memory performance can be improved as a buffer layer, for example, by preparing Sb 2 Te 3 /Bi 2 Te 3 The superlattice structure is used as a buffer layer for a phase change memory (China patent application, which is a phase change memory unit with a superlattice structure buffer layer and a preparation method thereof, CN 112909162A). Meanwhile, the superlattice structure can effectively provide a thin film grain boundary so as to guide a forming path of the conductive thin wire to be applied to the memristor, and the consistency of the device is improved (Chinese patent application, namely, a memristor with a superlattice-like material functional layer and a preparation method thereof, CN 113078262A).
Disclosure of Invention
In view of the above-identified deficiencies or improvements in the prior art, it is an object of the present invention to provide a HfO-based process 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristors and their fabrication, wherein the superlattice ferroelectric memristors are distinguished from conventional metal doped HfO by improving the structure and composition of the device functional layer 2 The invention discloses a base ferroelectric memristor, which adopts stacked growth superlattice HfO 2 Layer and ZrO 2 Layer (or Al) 2 O 3 The layer) is used as a ferroelectric memristor functional layer, and has good ferroelectricity and memristance. The functional layer is based on HfO 2 /ZrO 2 Superlattice structure or HfO 2 /Al 2 O 3 Superlattice structure utilizing HfO 2 And ZrO(s) 2 (or Al) 2 O 3 ) The atomic radius is equal, the crystal structure and the lattice parameter are similar, the lattice matching degree is higher, and the Hf is strongerThe O bond and the Zr-O bond (or Al-O bond) can well maintain the residual polarization intensity of the device, and nonvolatile storage is realized; the stress between superlattice interfaces is more favorable for inducing ferroelectric phase formation, the inter-interface potential barrier can effectively restrict free diffusion of electrons and particles, effectively prevent neutralization and phase separation of polarons, improve ferroelectric fatigue characteristics, provide effective formation paths for migration of conductive filaments, and stabilize memristance characteristics of devices. By HfO 2 /ZrO 2 (or HfO) 2 /Al 2 O 3 ) The superlattice film has electric characteristics, and the device can stably circulate for 30 circles in a voltage range of-3V-3V. In addition, the invention can lead the device to simultaneously show ferroelectricity and memristance through simple annealing treatment, and provides important theoretical guidance and technical support for the preparation of the high-performance ferroelectric memristor and the memory.
In order to achieve the above object, according to one aspect of the present invention, there is provided a superlattice ferroelectric memristor characterized by comprising a lower electrode layer, a functional layer, and an upper electrode layer stacked in this order from bottom to top, wherein the functional layer is a superlattice functional layer composed of at least one superlattice unit, each superlattice unit is formed by stacking a first functional material and a second functional material in this order from bottom to top, and the thickness of any one of the functional layers formed of the first functional material or the second functional material satisfies 0.6 to 5nm; the superlattice ferroelectric memristor is concretely based on HfO 2 /ZrO 2 Superlattice ferroelectric memristor based on HfO 2 /Al 2 O 3 The first functional material is tetragonal phase and/or cubic phase HfO 2 The second functional material is ZrO 2 Or Al 2 O 3 。
As a further preferred aspect of the present invention, the superlattice ferroelectric memristor is further subjected to annealing treatment at a temperature of 500 ℃ to 800 ℃; the annealing time is 20s-300s;
preferably, the annealing temperature is 650 ℃, and the annealing time is 30s.
As a further preferred mode of the invention, the superlattice ferroelectric memristor can enable the internal polarization direction of the superlattice functional layer to be turned over or enable internal oxygen vacancies to migrate through direct-current voltage regulation and current limiting regulation, so that the switching regulation and control of the high resistance and the low resistance of the superlattice ferroelectric memristor are realized; wherein the direct current voltage regulation is changed within the range of-5V to 5V, and the limiting current regulation is changed within the range of 10uA to 10 mA;
preferably, the direct-current voltage regulating range is-3V, and the limiting current is 10mA.
As a further preferred aspect of the present invention, the superlattice ferroelectric memristor further adjusts the domain inversion direction inside the superlattice functional layer by pulse amplitude and frequency, so as to realize the nonvolatile ferroelectric characteristic of the superlattice ferroelectric memristor; wherein, the pulse amplitude is controlled to be 1V-4V, and the pulse frequency is controlled to be 100Hz-5kHz;
more preferably, the pulse signal applied by the pulse amplitude and frequency adjustment is a triangular pulse, the pulse amplitude is 4V, and the frequency is 1kHz.
As a further preferred aspect of the present invention, the number of superlattice units in the functional layer is 2n, and n is an integer of 1 or more and 5 or less.
As a further preferred aspect of the present invention, the n is equal to 3, and the functional layer is made of HfO 2 Sub-functional layer, zrO 2 Sub-functional layer, hfO 2 Sub-functional layer, zrO 2 Sub-functional layer, hfO 2 Sub-functional layer and ZrO 2 Sub-functional layers 6 sub-functional layers are formed by stacking from bottom to top in sequence;
alternatively, n is equal to 3, and the functional layer is made of HfO 2 Sub-functional layer, al 2 O 3 Sub-functional layer, hfO 2 Sub-functional layer, al 2 O 3 Sub-functional layer, hfO 2 Sub-functional layer and Al 2 O 3 Sub-functional layers the 6 sub-functional layers are stacked in turn from bottom to top.
As a further preferred aspect of the present invention, the functional layer is prepared by sequentially stacking a first functional material and a second functional material on the lower electrode layer by Atomic Layer Deposition (ALD), pulsed Laser Deposition (PLD), or Molecular Beam Epitaxy (MBE).
As a further preferred aspect of the present invention, the thickness of each of the sub-functional layers in the functional layer is 2nm; the total thickness of the functional layer is not more than 20nm, more preferably 12nm.
As a further preferred aspect of the present invention, the electrode material used for the lower electrode layer is selected from Pt, ti, ITO, ag, cu, tiN; the electrode material adopted by the upper electrode layer is selected from TiN, pt, taN, tiW, au, W;
preferably, the electrode material adopted by the lower electrode layer is Pt, and the electrode material adopted by the upper electrode layer is TiN.
According to another aspect of the present invention, the present invention provides a method for manufacturing the superlattice ferroelectric memristor, wherein the method includes preparing a lower electrode layer on a substrate, and then preparing a functional layer on the lower electrode layer; then photoetching and depositing an upper electrode layer; finally, annealing in an annealing furnace;
preferably, the deposition of the functional layer is performed by Atomic Layer Deposition (ALD) alternately depositing a first functional material and a second functional material; the atomic layer deposition reaction chamber temperature is 260 ℃ to 330 ℃, more preferably 300 ℃.
Compared with the prior art, aiming at the key problems of hafnium oxide film dielectric constant reduction caused by doping, more defects in the film caused by lattice mismatch, large leakage current of devices and the like of the traditional ferroelectric memristor film due to doping with different concentrations, the invention adopts ZrO with equal radius of Hf atoms, similar lattice structure and lattice parameter and low lattice mismatch 2 Material (or Al) 2 O 3 Material), hfO can be grown by ALD or the like process stack 2 Layer and ZrO 2 Layer (or Al) 2 O 3 Layer), generating HfO 2 /ZrO 2 (or HfO) 2 /Al 2 O 3 ) The superlattice structure ferroelectric film is further obtained, and the superlattice-based ferroelectric memristor can be further obtained, so that the characteristics of high dielectric constant, low interface trap charge density, high thermal stability, low leakage current and the like of the superlattice can be effectively utilized, and the device performance is realizedAnd (5) optimizing.
HfO 2 And ZrO(s) 2 The atomic radiuses are equal, the crystal structures and the lattice parameters are similar, the lattice matching degree is higher, and the superlattice ferroelectric film with low defect concentration can be prepared by common deposition processes (ALD, PLD and MBE); meanwhile, the stronger Hf-O bond and Zr-O bond can well maintain the remnant polarization of the device, and nonvolatile storage is realized. Second, the present invention utilizes HfO 2 /ZrO 2 (HfO 2 /Al 2 O 3 ) The superlattice film has electric characteristics, and the device can stably circulate for 30 circles in a voltage range of-3V-3V. The stress between the superlattice interfaces is more conducive to inducing ferroelectric phase formation. The interfacial potential barrier can effectively restrict free diffusion of electrons and particles, effectively prevent neutralization and phase separation of polarons, and improve the fatigue property of ferroelectric. Meanwhile, an effective forming path is provided for migration of the conductive filaments, and memristive characteristics of the device are stabilized. The invention utilizes HfO 2 /ZrO 2 (HfO 2 /Al 2 O 3 ) The superlattice film optimizes the ferroelectric performance of the device and provides a new thought for the preparation and optimization of the ferroelectric memristor.
The superlattice ferroelectric memristor disclosed by the invention shows excellent ferroelectric performance after annealing treatment, wherein the annealing temperature is preferably 500-800 ℃, and the annealing time is preferably 20-300 s. HfO (HfO) 2 After annealing, ferroelectric phases and non-ferroelectric phases exist, and the characteristics of random distribution of the phases are found through characterization of the film, wherein the ferroelectric phases are tetragonal phases and/or cubic phases, and the non-ferroelectric phases are monoclinic phases.
The device of the invention has good ferroelectric and memristive properties, and particularly can optimize the performance of the ferroelectric device. The ferroelectric characteristic is caused by the content of ferroelectric phases in the film and the degree of polarization inversion determines the quality of the ferroelectric performance of the device when voltage is applied; the memristive properties are due to the presence of oxygen vacancies within the thin film, and oxygen vacancy migration during application of a voltage causes the formation of oxygen vacancy conductive filaments within the thin film that connect the upper and lower electrodes. The superlattice ferroelectric memristor can utilize proper direct currentAnd the voltage and the limiting current regulate the migration of oxygen vacancies in the superlattice film, so that the high/low resistance value regulation and control of the device are realized, and the memristive electrical property is realized. The device of the present invention can realize a stable cycle of 30 turns and can realize a self-limiting characteristic, taking the following examples. The superlattice ferroelectric memristor can also adjust the turning direction of ferroelectric domains in the superlattice film by utilizing proper pulse amplitude (such as 1V-4V) and frequency (such as 100Hz-5 kHz) so as to realize nonvolatile ferroelectric characteristics of the device; the polarization intensity of the device is optimized and improved by utilizing the characteristic of increasing polarization charges at the superlattice interface, so that the ferroelectric electric performance and the optimization of the device are realized. The invention preferably controls the thickness of the functional layer, the magnitude of the applied voltage, etc., and examples are given below in which HfO having thicknesses of 12nm, 16nm and 20nm are prepared respectively 2 /ZrO 2 Is a superlattice structure film of (1), when HfO 2 /ZrO 2 At a superlattice structure film thickness of 12nm, the ferroelectric characteristics of the device are optimized in various embodiments, and the polarization intensity is 13.27uC/cm 2 。
In particular analysis by HfO 2 /ZrO 2 For example, the superlattice ferroelectric memristor constructed by the superlattice functional layer can obtain the following beneficial effects compared with the prior art:
(1) The invention designs HfO 2 Layer and ZrO 2 Ferroelectric device with excellent ferroelectric performance is prepared by forming superlattice through layer stack growth, and HfO is used for preparing ferroelectric device with excellent ferroelectric performance 2 /ZrO 2 The superlattice structure can have better lattice matching degree, so that the interface trap charge density is lower, the leakage current of the device is reduced, and the ferroelectric performance stability of the device is improved. HfO (HfO) 2 /ZrO 2 The superlattice film effectively improves the ferroelectric performance of the ferroelectric memristor device.
(2)HfO 2 /ZrO 2 The trap charge density at the superlattice interface is low, and the memristance characteristic of the device is stable. Internal oxygen vacancy migration can be achieved by applying a large voltage, and the device stably cycles 30 memristances when a limiting current of 10mA is applied.
(3) By controlling HfO 2 /ZrO 2 The superlattice thickness optimizes the ferroelectric properties of the device.Preparation of HfO of different thicknesses 2 /ZrO 2 The same triangular pulse is applied to the superlattice ferroelectric device. Experimental results show that the device HfO 2 /ZrO 2 The superlattice thickness has a relatively obvious influence on the ferroelectric performance of the device. The polarization intensity of the device gradually decreases with the increase of the thickness, and the polarization intensity is 13.27uC/cm 2 Reduced to 6.54uC/cm 2 。
(4) In addition, preparation of HfO 2 /ZrO 2 Compared with the traditional perovskite and lead zirconate titanate ferroelectric materials, the superlattice ferroelectric film does not contain toxic element lead and is environment-friendly. Compared with elements such as doped Si, Y and the like, the superlattice structure has higher lattice matching degree, stronger Hf-O and Zr-O bonds and high thermal stability, and can well form a ferroelectric phase and maintain the polarization intensity of a ferroelectric device. Has great advantages for preparing high-performance ferroelectric devices.
HfO 2 /Al 2 O 3 The superlattice ferroelectric film has equivalent properties in comparison with ZrO 2 Materials, al 2 O 3 The radius of Al atoms in the material is smaller than that of Hf atoms, and is equal to that of ZrO 2 Similar in material, al 2 O 3 The material may also form dopant-oxygen bonds with O, considering that dopant-oxygen bonds may promote HfO 2 The material forms ferroelectric phase to improve the ferroelectric property of the device, thus HfO 2 /Al 2 O 3 Superlattice ferroelectric thin films can also achieve the same with HfO 2 /ZrO 2 The superlattice ferroelectric film has equivalent technical effects.
In summary, the invention is implemented by constructing HfO 2 /ZrO 2 Superlattice structure or HfO 2 /Al 2 O 3 The superlattice structure forms a ferroelectric film with the superlattice structure, and further obtains a novel high-performance HZO or HAO material system ferroelectric memristor, which has important significance for the subsequent application of the ferroelectric device in a calculation and storage integrated chip.
Drawings
FIG. 1 is a block diagram of a HfO-based system according to embodiment 1 of the present invention 2 /ZrO 2 Schematic perspective view of ferroelectric memristor with superlattice structure (functional layer has 6 layers, hfO with thickness of 2nm in the figure) 2 And ZrO 2nm thick 2 Overlapping in this way).
FIG. 2 is a block diagram of an HfO-based system according to embodiment 1 of the present invention 2 /ZrO 2 The direct current I-V characteristic of the superlattice structure ferroelectric memristor. From the figure, it can be seen that based on HfO 2 /ZrO 2 The ferroelectric memristor with superlattice structure is stable and circulated for 30 times when limiting current is 10mA.
FIG. 3 is a block diagram of an HfO-based system according to embodiment 1 of the present invention 2 /ZrO 2 Ferroelectric memristors with superlattice structures have hysteresis loop test curves measured under the conditions of triangular pulse frequency of 1KHz and amplitudes of +/-3, +/-3.5 and +/-4V respectively.
FIG. 4 is a block diagram of an HfO based system according to embodiment 2 of the present invention 2 /ZrO 2 A structural schematic diagram of the ferroelectric memristor with the superlattice structure and a measured hysteresis loop test curve; wherein (a) in FIG. 4 corresponds to the HfO-based one provided in example 2 2 /ZrO 2 Schematic structural diagram of ferroelectric memristor with superlattice structure (8 functional layers, each layer being respectively 2nm thick HfO 2 And a thick ZrO of 2nm 2 Stacked in order), FIG. 4 (b) corresponds to a hysteresis loop test curve measured at a voltage of.+ -.4V (remnant polarization is 12.37 uC/cm) at a current frequency of 100Hz after annealing the device 2 )。
FIG. 5 is a block diagram of an HfO-based system according to embodiment 3 of the present invention 2 /ZrO 2 A structural schematic diagram of the ferroelectric memristor with the superlattice structure and a measured hysteresis loop test curve; wherein (a) in FIG. 5 corresponds to the HfO-based one provided in example 3 2 /ZrO 2 Schematic structural diagram of ferroelectric memristor with superlattice structure (10 functional layers, each layer being respectively 2nm thick HfO 2 And a thick ZrO of 2nm 2 Overlapping), fig. 5 (b) corresponds to a 100 hysteresis loop test curve measured at + 4V voltage at a current frequency of 1KHz after annealing of the device.
FIG. 6 is a graph of the comparison of hysteresis loops measured at +4V voltage at a current frequency of 1KHz after annealing of the three ferroelectric memristors provided by examples 1, 2, and 3 of the present invention.
FIG. 7 is a block diagram of an HfO based system according to embodiment 4 of the present invention 2 /Al 2 O 3 A schematic structural diagram of a ferroelectric memristor with a superlattice structure. The superlattice structure in the device structure has 6 sub-functional layers in total.
FIG. 8 is a block diagram of an HfO-based system according to embodiment 5 of the present invention 2 /Al 2 O 3 A schematic structural diagram of a ferroelectric memristor with a superlattice structure. The superlattice structure in the device structure has 8 sub-functional layers in total.
FIG. 9 is a block diagram of an HfO-based solution according to embodiment 6 of the present invention 2 /Al 2 O 3 A schematic structural diagram of a ferroelectric memristor with a superlattice structure. The superlattice structure in the device structure has 10 sub-functional layers in total.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
With HfO 2 /ZrO 2 The superlattice ferroelectric device is exemplified by the device of the present invention which can be prepared by ALD method, specifically, the reaction chamber can be heated to a certain temperature (250-330 ℃, especially 300 ℃), hf [ N (C) 2 H 5) CH 3 ] 4 And Zr [ N (C) 2 H 5 )CH 3 ] 4 As precursors of Hf source and Zr source, respectively, water as oxygen source, high purity nitrogen (N) 2 ) Cleaning gas for precursor carrier and reaction chamber, and sequentially depositing HfO 2 Layer and ZrO 2 The layer (there will be a small number of oxygen vacancies within the film).
HfO 2 Layer and ZrO 2 The total number of layers may be, for example, 4, 6, 8, 10, 12, etc.
The following are specific examples:
example 1: hfO-based method 2 /ZrO 2 Method for manufacturing ferroelectric memristor with superlattice structure
Example 1 provides HfO 2 /ZrO 2 Ferroelectric memristor with superlattice structure, and device structure is TiN/ZrO 2 /HfO 2 /ZrO 2 /HfO 2 /ZrO 2 /HfO 2 Pt, the structure of which is shown in FIG. 1, is HfO of preferably 2nm thickness in the present embodiment 2 And ZrO 2nm thick 2 There are 6 layers in total. The lower electrode is made of Pt, and the upper electrode is made of TiN.
The HfO 2 /ZrO 2 A preparation method of the ferroelectric memristor with the superlattice structure; the method comprises the following specific steps:
(1) The first step: and (3) cleaning a substrate:
will be attached with SiO 2 Respectively immersing the Si substrate in acetone and alcohol solution in turn for ultrasonic cleaning for 10min. And placing the sample into plasma water, and ultrasonically cleaning for 3min.
(2) And a second step of: preparing a lower electrode:
preparing a Pt lower electrode with the thickness of 100nm on a substrate by adopting a magnetron sputtering method, wherein the specific process parameters are as follows: sputtering background vacuum was 5×10 -5 Pa, sputtering gas pressure 0.5Pa, power 35W, and sputtering time 700s.
(3) And a third step of: functional layer preparation:
the functional layer is prepared on the Pt bottom electrode by adopting an ALD method, and the specific process flow is as follows: (1) firstly, heating the reaction cavity to 300 ℃; (2) introducing N 2 Cleaning the reaction cavity; (3) deposition of 2nm HfO 2 (precursor Hf [ N (C) 2 H 5 )CH 3 ] 4 The oxidant is H 2 O); (4) depositing ZrO at 2nm 2 (precursor Zr [ N (C) 2 H 5 )CH 3 ] 4 The oxidant is H 2 O); (3) and (4) the process is cycled 3 times to obtain HfO 2 /ZrO 2 Is a superlattice functional layer of the device. Of course, defects may also be present in the superlattice thin film resulting from ALD deposition, subject to process conditions.
(4) Fourth step: pattern transfer:
pattern transfer is carried out by using a photoetching process, and a region of an upper electrode is reserved on the functional layer obtained in the third step through photoetching; the dimensions of the upper electrode are 50 μm×50 μm squares, and the photolithographic process comprises: and (3) homogenizing, pre-baking, pre-exposing, post-baking, post-exposing, developing and the like.
(5) Fifth step: preparing an upper electrode:
a magnetron sputtering method was used to prepare a 100nm thick TiN upper electrode. The specific process parameters are as follows: the background vacuum for sputtering was 5×10 -5 Pa, a sputtering gas pressure was 0.5Pa. The power was 120W and the sputtering time was 1200s.
(6) Sixth step: stripping:
immersing the sample obtained in the upper electrode preparation step into an acetone solution, ultrasonically stripping and oscillating until the photoresist and the redundant electrode materials above the photoresist are all peeled off, immersing the photoresist and the redundant electrode materials into an ethanol solution and deionized water in sequence for cleaning, and drying by a nitrogen gun.
(7) Seventh step: annealing:
annealing the device obtained in the sixth step by using an annealing furnace, specifically: the background vacuum for annealing was 4×10 -2 Pa, the temperature is 650 ℃, and the time is 30s.
(8) Eighth step: memristance performance testing was performed on the ferroelectric memristor cell of example 1:
the memristance characteristic test is carried out on the device after the seventh annealing step, 30 cycles of direct current response are tested, and the result is shown in fig. 2, and as can be seen from the graph, the memristance performance of the annealed device is stable and circulates for 30 circles when the limiting current is 10mA and the voltage is-3V-3V.
(9) Ninth step: ferroelectric performance test was performed on the ferroelectric memristor cell of example 1:
and (3) performing ferroelectric property test on the device subjected to the seventh annealing step. The triangular pulse frequency is set to be 1KHz, and the amplitude is + -3, + -3.5 and + -4V respectively. As shown in FIG. 3, which shows the P-E image of the ferroelectric property of example 1 at different pulse amplitudes, it can be seen that the device has ferroelectricity at all three voltages, and the remnant polarization values are 8.75uC/cm, respectively 2 、9.85uC/cm 2 And 13.30uC/cm 2 。
Example 2
Example 2 is generally similar to example 1, the main difference being that the third step, when ALD plating the functional layer, the (3) and (4) processes are cycled 4 times to obtain HfO having a total thickness of 16nm 2 /ZrO 2 Is a superlattice functional layer of the device. FIG. 4 shows the ferroelectric P-E curve of example 2 when the triangular pulse frequency was 100Hz and the amplitude was.+ -. 4V. As the superlattice film thickness increases, the remnant polarization of example 2 is 12.37uC/cm 2 。
Example 3
Example 3 is generally similar to example 1, the main difference being that the third step, when ALD plating the functional layer, the (3) and (4) processes are cycled 5 times to obtain HfO having a total thickness of 20nm 2 /ZrO 2 Is a superlattice functional layer of the device. FIG. 5 shows the cyclic ferroelectric P-E curve of example 3 when the triangular pulse frequency is 100Hz and the amplitude is.+ -.4V. The residual polarization of example 3 was 6.58uC/cm as the superlattice film thickness increased 2 。
Examples 4, 5 and 6: hfO-based method 2 /Al 2 O 3 Preparation method of ferroelectric memristor with superlattice structure
Examples 4, 5 and 6 provide HfO 2 /Al 2 O 3 Ferroelectric memristor with superlattice structure, the device structure is shown in fig. 7, 8 and 9, and is HfO 2 /Al 2 O 3 Superlattice structure. HfO of 2nm thickness is preferred in these examples 2 And 2nm thick Al 2 O 3 ，HfO 2 /Al 2 O 3 The total number of layers of the structure is 2n, where n is 3, 4 and 5, respectively. The lower electrode is made of Pt, and the upper electrode is made of TiN. As shown in fig. 7, 8 and 9, is a device structure thereof.
The ferroelectric characteristics of the device are derived from the content of ferroelectric phases of the thin film. Compared with ZrO 2 Materials, al 2 O 3 The radius of Al atoms in the material is smaller than that of Hf atoms, and is equal to that of ZrO 2 Similar in material, al 2 O 3 The material may also form dopant-oxygen bonds with O, considering that dopant-oxygen bonds may promote HfO 2 The materials form ferroelectric phases, improving the ferroelectric properties of the device, and thus, embodiments 4, 5 and 6 will also be able to achieve technical effects comparable to those of embodiments 1-3 described above.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.

Claims (15)

1. The superlattice ferroelectric memristor is characterized by comprising a lower electrode layer, a functional layer and an upper electrode layer which are sequentially stacked from bottom to top, wherein the functional layer is a superlattice functional layer formed by at least one superlattice unit, each superlattice unit is formed by sequentially stacking a first functional material and a second functional material from bottom to top, and the thickness of any one of the functional layers formed by the first functional material or the second functional material is 0.6-5nm; the superlattice ferroelectric memristor is concretely based on HfO 2 /ZrO 2 Superlattice ferroelectric memristor based on HfO 2 /Al 2 O 3 The first functional material is HfO of cubic phase 2 Or HfO in tetragonal and cubic phases 2 The second functional material is ZrO 2 Or Al 2 O 3 ；
The total number of layers of the functional layer is 2n, n is an integer which is more than or equal to 1 and less than or equal to 5, and the total thickness of the functional layer is not more than 20nm; the functional layer is made of HfO 2 Sub-functional layer, zrO 2 The sub-functional layers are sequentially stacked from bottom to top or formed according to HfO 2 Sub-functional layer, al 2 O 3 The sub-functional layers are sequentially stacked from bottom to top.
2. The superlattice ferroelectric memristor of claim 1, further subjected to an annealing treatment at a temperature of 500-800 ℃; the annealing time is 20s-300s.
3. The superlattice ferroelectric memristor of claim 2, wherein the annealing temperature is 650 ℃, and the annealing time is 30s.
4. The superlattice ferroelectric memristor according to claim 1, wherein the superlattice ferroelectric memristor can enable the internal polarization direction of the superlattice functional layer to be reversed or internal oxygen vacancies to migrate through direct-current voltage regulation and limiting current regulation, so as to realize switching regulation and control of high resistance and low resistance of the superlattice ferroelectric memristor; the direct-current voltage regulation is changed within the range of-5V, and the limiting current regulation is changed within the range of 10 mu A-10 mA.
5. The superlattice ferroelectric memristor of claim 4, wherein the direct current voltage adjustment range is-3 v to 3v, and the limiting current used is 10mA.
6. The superlattice ferroelectric memristor of claim 1, wherein the superlattice ferroelectric memristor further adjusts the internal ferroelectric domain inversion direction in the superlattice functional layer through pulse amplitude and frequency to realize the nonvolatile ferroelectric characteristic of the superlattice ferroelectric memristor; wherein the pulse amplitude is controlled to be 1V-4V, and the pulse frequency is controlled to be 100Hz-5kHz.
7. The superlattice ferroelectric memristor of claim 6, wherein the pulse signal applied by the pulse amplitude and frequency adjustment is a triangular pulse, the pulse amplitude is 4V, and the frequency is 1kHz.
8. The superlattice ferroelectric memristor of claim 1, wherein the n is equal to 3, and the functional layer is made of HfO 2 Sub-functional layer, zrO 2 Sub-functional layer, hfO 2 Sub-functional layer, zrO 2 Sub-functional layer, hfO 2 Sub-functional layer and ZrO 2 Sub-functional layers 6 sub-functional layers are formed by stacking from bottom to top in sequence;
alternatively, n is equal to 3, and the functional layer is made of HfO 2 Sub-functional layer, al 2 O 3 Sub-functional layer, hfO 2 Sub-functional layer, al 2 O 3 Sub-functional layer, hfO 2 Sub-functional layer and Al 2 O 3 Sub-functional layer 6 layers of sub-functionsThe layers are stacked in turn from bottom to top.
9. The superlattice ferroelectric memristor according to claim 1, wherein the functional layer is prepared by stacking a first functional material and a second functional material sequentially on the lower electrode layer by Atomic Layer Deposition (ALD), pulsed Laser Deposition (PLD), or Molecular Beam Epitaxy (MBE).
10. The superlattice ferroelectric memristor of claim 1, wherein each of the functional layers has a thickness of 2nm; the total thickness of the functional layer was 12nm.
11. The superlattice ferroelectric memristor of claim 1, wherein the lower electrode layer employs an electrode material selected from Pt, ti, ITO, ag, cu, tiN; the electrode material adopted by the upper electrode layer is selected from TiN, pt, taN, tiW, au, W.
12. The superlattice ferroelectric memristor of claim 11, wherein the electrode material used for the lower electrode layer is Pt, and the electrode material used for the upper electrode layer is TiN.
13. The method of any one of claims 1-12, wherein the method comprises preparing a lower electrode layer on a substrate, and then preparing a functional layer on the lower electrode layer; then photoetching and depositing an upper electrode layer; finally, annealing in an annealing furnace.
14. The method of claim 13, wherein the depositing of the functional layer is performed by Atomic Layer Deposition (ALD) of alternately depositing the first functional material and the second functional material; the temperature of the atomic layer deposition reaction chamber is 260-330 ℃.
15. The method of claim 14, wherein the atomic layer deposition reaction chamber temperature is 300 ℃.
CN202111270628.XA 2021-10-29 2021-10-29 HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof Active CN114023876B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202111270628.XA CN114023876B (en) 2021-10-29 2021-10-29 HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof
PCT/CN2021/130012 WO2023070748A1 (en) 2021-10-29 2021-11-11 Superlattice ferroelectric memristor based on hfo2/zro2 or hfo2/al2o3 and preparation thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111270628.XA CN114023876B (en) 2021-10-29 2021-10-29 HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof

Publications (2)

Publication Number Publication Date
CN114023876A CN114023876A (en) 2022-02-08
CN114023876B true CN114023876B (en) 2023-08-25

Family

ID=80058776

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111270628.XA Active CN114023876B (en) 2021-10-29 2021-10-29 HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof

Country Status (2)

Country Link
CN (1) CN114023876B (en)
WO (1) WO2023070748A1 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1831184A (en) * 2005-03-08 2006-09-13 电子科技大学 Displacement ferroelectric super-lattice thin film material having stress-limiting layer and preparation method thereof
KR20110048851A (en) * 2009-11-03 2011-05-12 엘지전자 주식회사 Apparatus for displaying image and method for operating the same
WO2017095678A1 (en) * 2015-12-03 2017-06-08 Micron Technology, Inc. Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
CN108511517A (en) * 2017-02-23 2018-09-07 爱思开海力士有限公司 Ferroelectric memory device and its method of manufacture
JP2018190753A (en) * 2017-04-28 2018-11-29 株式会社半導体エネルギー研究所 Semiconductor device and display device
CN111223873A (en) * 2020-01-16 2020-06-02 华中科技大学 Asymmetric ferroelectric functional layer array and preparation method of ferroelectric tunnel junction multi-value storage unit
WO2021128994A1 (en) * 2019-12-24 2021-07-01 华中科技大学 Superlattice memristor functional layer material, and memristor unit and preparation method therefor
CN113078262A (en) * 2021-03-16 2021-07-06 华中科技大学 Memristor with superlattice-like material functional layer and preparation method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013012800A2 (en) * 2011-07-15 2013-01-24 The Johns Hopkins University Magneto-electronic devices and methods of production
CN104009156B (en) * 2014-06-06 2017-10-03 湘潭大学 A kind of polycrystalline ferroelectric thin film base Ferro-RRAM
US10727276B1 (en) * 2019-05-24 2020-07-28 Sandisk Technologies Llc Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof
US11532355B2 (en) * 2019-09-26 2022-12-20 The Regents Of The University Of California Non-volatile multi-level cell memory using a ferroelectric superlattice and related systems
CN112701220B (en) * 2020-10-23 2024-02-06 大连理工大学 HfO with metal Hf buffer layer 2 Base memristor and manufacturing method thereof
CN113285020B (en) * 2021-04-29 2022-07-05 华中科技大学 Single-channel memristor and preparation method thereof

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1831184A (en) * 2005-03-08 2006-09-13 电子科技大学 Displacement ferroelectric super-lattice thin film material having stress-limiting layer and preparation method thereof
KR20110048851A (en) * 2009-11-03 2011-05-12 엘지전자 주식회사 Apparatus for displaying image and method for operating the same
WO2017095678A1 (en) * 2015-12-03 2017-06-08 Micron Technology, Inc. Ferroelectric capacitor, ferroelectric field effect transistor, and method used in forming an electronic component comprising conductive material and ferroelectric material
CN108511517A (en) * 2017-02-23 2018-09-07 爱思开海力士有限公司 Ferroelectric memory device and its method of manufacture
JP2018190753A (en) * 2017-04-28 2018-11-29 株式会社半導体エネルギー研究所 Semiconductor device and display device
WO2021128994A1 (en) * 2019-12-24 2021-07-01 华中科技大学 Superlattice memristor functional layer material, and memristor unit and preparation method therefor
CN111223873A (en) * 2020-01-16 2020-06-02 华中科技大学 Asymmetric ferroelectric functional layer array and preparation method of ferroelectric tunnel junction multi-value storage unit
CN113078262A (en) * 2021-03-16 2021-07-06 华中科技大学 Memristor with superlattice-like material functional layer and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices;Min Hyuk Park等;《Appl. Phys. Rev.》;20191108;第6卷;全文 *

Also Published As

Publication number Publication date
WO2023070748A1 (en) 2023-05-04
CN114023876A (en) 2022-02-08

Similar Documents

Publication Publication Date Title
Goh et al. Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
Fengler et al. On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2
Lomenzo et al. Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
Lomenzo et al. The effects of layering in ferroelectric Si-doped HfO2 thin films
CN111223873B (en) Asymmetric ferroelectric functional layer array and preparation method of ferroelectric tunnel junction multi-value storage unit
Yoon et al. Effect of LaNiO3 interlayer on dielectric properties of (Ba0. 5Sr0. 5) TiO3 thin films deposited on differently oriented Pt electrodes
TW200834821A (en) Method of forming a structure having a high dielectric constant, a structure having a high dielectric constant, a capacitor including the structure, and method of forming the capacitor
CN107146759A (en) A kind of hafnium oxide ferroelectricity grid preparation method based on ion implantation doping
Ryu et al. Comparative studies on ferroelectric switching kinetics of sputtered Hf0. 5Zr0. 5O2 thin films with variations in film thickness and crystallinity
Popovici et al. High-endurance ferroelectric (La, Y) and (La, Gd) Co-doped hafnium zirconate grown by atomic layer deposition
Fengler et al. Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
CN111211135B (en) Modulation method of asymmetric ferroelectric tunneling junction multi-value storage unit
Liang et al. ZrO 2-HfO 2 superlattice ferroelectric capacitors with optimized annealing to achieve extremely high polarization stability
KR100378276B1 (en) Insulating material, substrate covered with an insulating film, method of producing the same, and thin-film device
Kim et al. Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO x tunnel junction memory
Zhao et al. Impact of molybdenum oxide electrode on the ferroelectricity of doped-hafnia oxide capacitors
Jang et al. Electric fatigue in sol–gel prepared Pb (Zr, Sn, Ti) NbO 3 thin films
CN114023876B (en) HfO-based method 2 /ZrO 2 Or HfO 2 /Al 2 O 3 Superlattice ferroelectric memristor and preparation thereof
CN114974893A (en) Component gradient distribution hafnium oxide-based ferroelectric film, ferroelectric capacitor and preparation method
US20230326747A1 (en) Method for producing a ferroelectric layer or an antiferroelectric layer
Debnath et al. Sol–gel derived BST (Ba x Sr 1− x TiO 3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure
Wang et al. CMOS-compatible Hf 0.5 Zr 0.5 O 2-based ferroelectric capacitors for negative capacitance and non-volatile applications
Saif et al. Effect of the chemical composition at the memory behavior of Al/BST/SiO 2/Si-gate-FET structure
CN117529222B (en) Topological phase change memristor with controllable conductive wire forming area and preparation method thereof
Devices Epitaxial Single-Crystalline PZT Thin Films on ZrO

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant