CN114023625A - Low-temperature ion trap system - Google Patents

Low-temperature ion trap system Download PDF

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Publication number
CN114023625A
CN114023625A CN202111490378.0A CN202111490378A CN114023625A CN 114023625 A CN114023625 A CN 114023625A CN 202111490378 A CN202111490378 A CN 202111490378A CN 114023625 A CN114023625 A CN 114023625A
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ion trap
blade
atom
trap device
housing
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CN202111490378.0A
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苏东波
郑晨光
周卓俊
黄毛毛
韩琢
罗乐
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Guangdong Qike Quantum Information Technology Research Institute Co ltd
Guokaike Quantum Technology Beijing Co Ltd
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Guangdong Qike Quantum Information Technology Research Institute Co ltd
Guokaike Quantum Technology Beijing Co Ltd
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Priority to CN202111490378.0A priority Critical patent/CN114023625A/en
Publication of CN114023625A publication Critical patent/CN114023625A/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00Particle spectrometers or separator tubes
    • H01J49/02Details
    • H01J49/10Ion sources; Ion guns

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Chemical & Material Sciences (AREA)
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  • Plasma & Fusion (AREA)
  • Mathematical Physics (AREA)
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  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)

Abstract

The invention belongs to the technical field of quantum computation, and provides a low-temperature ion trap system, which comprises: the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, and the atom generator is arranged on the base and is coaxial with the ion trap device; the atom generator is provided with an emission port for atom emission, and the emission port is over against the trapping channel of the ion trap device; the ion trap device generates a trapping electric field which ionizes atoms and traps the ions in the trapping channel. The structure is compact, the function is complete, the reliability is high, and various experimental requirements of quantum computation can be met; the heat load is low, the requirement of the system on cold quantity is reduced, and the function integration of the low-temperature blade-shaped ion trap is realized; the problems of short circuit, open circuit and the like caused by disordered routing are avoided, and necessary conditions are provided for the productization of the ion trap quantum computer.

Description

Low-temperature ion trap system
Technical Field
The invention belongs to the technical field of quantum computing, and particularly relates to a low-temperature ion trap system.
Background
In the field of quantum computation, an ion trap technology based on trapping ions is one of mainstream technical paths for realizing quantum force computation, ions cooled to a ground state are used as qubits, and control and reading of the qubits are performed by laser. In order to further reduce the collision of gas molecules on trapped ions, the use of ultra-low temperature techniques to cool ion traps to liquid helium temperature zones has been used in the industry. The ion trap in the liquid helium temperature region can further improve the vacuum degree of the vacuum cavity and reduce residual gas molecules on the one hand, and can reduce the heating of the ion crystal and improve the duration time of the ion crystal on the other hand, thereby prolonging the quantum bit coherence time and greatly improving the fidelity of the quantum logic gate.
The blade type ion trap is one of the forms of linear Porro traps, has the advantages of stable trapping electric field, strong ion controllability, multiple light entrance angles and the like, and is widely applied to ion trap quantum calculation. However, compared with the planar ion trap, the blade type ion trap is difficult to be compact and integrated in an ultra-low temperature and ultra-high vacuum system because four blade electrodes need to be distributed in a three-dimensional space. Meanwhile, the power supply lead of each blade electrode is difficult to perform planar wiring, so that wiring is messy, and short circuit is easily caused.
Therefore, a low-temperature ion trap system is needed to solve the problem that the blade-type ion trap is difficult to be compact and integrated in an ultra-low temperature ultra-high vacuum system.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a low temperature ion trap system, comprising: the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, and the atom generator is arranged on the base and is coaxial with the ion trap device; the atom generator is provided with an emission port for atom emission, and the emission port is over against the trapping channel of the ion trap device; the ion trap device generates a trapping electric field which ionizes atoms and traps the ions in the trapping channel.
Optionally, the atom generator comprises a housing and an atom source and a heater mounted within the housing; the emission port is arranged at one end of the shell, and the other end of the emission port is packaged through a sealing plate; the heater heats the atom source to excite the atom source to emit atoms, and the atoms are ejected out of the shell through the ejection port.
Optionally, the heater is provided with a terminal through which the heater is connected to a power source.
Optionally, the atomic source is made of one or more metals of calcium, cesium, beryllium and ytterbium.
Optionally, the atom source is formed in a cylindrical shape.
Optionally, the ion trap device includes a trap housing, the trap housing is provided with a plurality of laser windows, and the laser windows are used for allowing laser to enter the trap housing; a plurality of blade holders are arranged in the trap shell, and first blades and second blades are alternately arranged on the blade holders; the first blade is connected to a direct current power supply, the second blade is connected to a radio frequency signal, and the first blade and the second blade surround to form the trapping channel.
Optionally, the laser window is provided with an optical window, the optical window is made of fused quartz, and an antireflection film is attached to the optical window.
Optionally, the first blade and the second blade are both made of ceramics, a conductor layer is plated on the surface of the first blade and the second blade, the conductor layer forms a plurality of independent pole pieces, and the pole pieces are connected to the direct current power supply or the radio frequency signal.
Optionally, a plurality of through grooves are arranged on the blade edges of the first blade and the second blade.
Optionally, a filter capacitor is configured at the front end of the first blade, the filter capacitor is attached to the blade holder, an output end of the filter capacitor is connected to the first blade, and an input end of the filter capacitor is connected to the dc power supply.
Compared with the prior art, the low-temperature ion trap system has the beneficial effects that:
1. the function integration of the low-temperature blade-shaped ion trap is realized.
2. The whole structure is compact, and a layer of cold shield is integrated, so that the design of a peripheral vacuum cavity can be more compact and integrated.
3. And abundant trap laser channels and objective optical channels are arranged, so that various experimental requirements of quantum computation can be met.
4. The overall thermal load is greatly reduced, and the requirement of the system for cooling capacity is greatly reduced because the ion trap is encapsulated in a smaller space.
5. The integration of a peripheral circuit of the blade-shaped ion trap is realized by adopting a micro-processing technology, the assembly efficiency of the ion trap is greatly improved, and the problems of short circuit, open circuit and the like caused by disordered routing are avoided.
6. Compact structure, perfect function, high reliability, low thermal load and convenient use.
7. The distance between the channel window and the ion trap central trapping area is short, so that the whole low-temperature vacuum cavity can be designed more compactly, and necessary conditions are provided for the productization of an ion trap quantum computer.
Drawings
FIG. 1 is a schematic perspective view of the overall structure of a low temperature ion trap system of the present invention;
FIG. 2 is a schematic half-sectional view of the overall structure of the cryogenic ion trap system of the present invention;
fig. 3 is a schematic perspective view of the overall structure of the ion trap device of the present invention;
figure 4 is a schematic front view of an ion trap device according to the present invention;
FIG. 5 is a schematic sectional view A-A of FIG. 4;
FIG. 6 is a schematic cross-sectional view C-C of FIG. 5;
FIG. 7 is a schematic perspective exploded view of the atom generator of the present invention;
FIG. 8 is a schematic view of a half portion of the atom generator of the present invention.
Illustration of the drawings:
1. a base; 2. trapping channels; 4. a cover plate; 5. a window; 6. a window pane; 8. A through groove; 10. an ion trap arrangement; 20. an atom generator;
100. a well housing; 101. a laser window; 102. a blade holder; 103. a first blade; 104. a second blade; 105. a horizontal side; 106. a vertical side; 107. a bevel; 108. an open slot; 109. a wire guide groove; 110. a conductor film; 112. a positioning column; 113. a through hole; 114. a right-angled through hole; 115. welding the column; 116. a connector; 117. an optical window sheet; 118. a capacitor;
200. a housing; 201. an atomic source; 202. a heater; 203. an emission port; 204. closing the plate; 205. flanging; 206. a sleeve; 207. an electric heating wire; 208. a binding post; 209. an open end; 210. a heat insulating tube; 211. a spring.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Furthermore, in the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral connections; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described later can be combined with each other as long as they do not conflict with each other.
Referring to fig. 1-8, embodiments of the present invention provide a low temperature ion trap system comprising: the ion trap comprises a base 1, an atom generator 20, an ion trap device 10 and a cover plate 4, wherein the base 1 is a double-layer plate structure support, the front view direction of the base is I-shaped, and the upper layer of the base can be installed and connected with the atom generator 20 and the ion trap device 10. The base 1 may be made of a non-magnetic metal material with high thermal conductivity, such as oxygen-free copper or stainless steel. Preferably, the base 1 is made of oxygen-free copper. The base 1 made of the non-magnetic material can reduce magnetic interference of the ion trap system during working, and ensure that the function indication or data acquisition of the device is more accurate.
Further, as shown in fig. 3, the ion trap device 10 is a device with two through ends, and the front end of the ion trap device is covered on the base 1, and the rear end of the ion trap device is sealed by the cover plate 4. Wherein, one end of the ion trap device 10 connected with the base 1 is the front end. The ion trap device 10 is provided with a trapping channel 2, the ion trap device 10 can ionize atoms, the trapping channel 2 can trap ions, the ion trap device 10 is connected with a direct current power supply and a radio frequency signal source, and the direct current power supply and the radio frequency signal source are provided by external equipment.
Further, the atom generator 20 is installed on the base 1 on the same side as the ion trap device 10, and the axis of the atom generator 20 is coaxial with the axis of the ion trap device 10 after being installed. The atom generator 20 can be activated to generate an atomic vapor in which a large number of atoms are present. The atom generator 20 has an emission opening 203, and the emission opening 203 is used for emitting atoms generated by the atom generator 20, and the emitted atoms form an atom beam. The emission port 203 of the assembled atom generator 20 faces the trapping channel 2 of the ion trapping device 10, and the ion trapping device 10 can generate a trapping electric field, so that the trapping electric field ionizes atoms and traps the ions in the trapping channel 2.
Further, the cover plate 4 has a plate shape for tightly closing the rear end of the ion trap device 10. The cover plate 4 may be made of a non-magnetic metal material having high thermal conductivity, such as oxygen-free copper or stainless steel. Preferably, the cover plate 4 is made of oxygen-free copper. A window 5 is arranged on the cover plate 4, a window sheet 6 is assembled on the window 5, and the window sheet 6 can be made of fused quartz. The window 5 may be used to observe the internal operating conditions of the ion trap device 10 or to provide an axial passage for laser light into the ion trap device 10, facilitating manipulation of ions within the ion trap.
In some embodiments, as shown in fig. 7-8, the atom generator 20 includes a housing 200, with an atom source 201 and a heater 202 mounted within the housing 200; one end of the shell 200 is provided with an emission port 203, and the other end is sealed by a sealing plate 204; the heater 202 heats the atom source 201 to excite the atom source 201 to emit atoms, which exit the housing 200 through the emission port 203. The emission port 203 is located in the central axis direction of the ion trap device 10, and is closer to the center of the ion trap device 10, so that atoms can rapidly and accurately enter the trapping region at the center of the ion trap device 10, and ion trapping is realized.
Further, the housing 200 is a cylindrical cavity with one closed end and one open end, the open end 209 of the housing is formed with a flange 205, the open end 209 is mounted in a closed manner through a sealing plate 204, and the closed end of the housing 200 is provided with an emitting port 203. The case 200 may be made of oxygen-free copper or stainless copper or other non-magnetic, highly thermally conductive metal, and preferably, the case 200 is made of oxygen-free copper. The housing 200 can perform heat sink treatment on the whole atom generator 20, and guide the heat generated by the heater 202 to the cold source, so as to prevent the heat from flowing to the ion trap device 10, which results in the damage of ion crystals.
Further, an atom source 201 is installed inside the case 200 for generating atomic particles. The atom source 201 can be made of one or more metals of calcium, cesium, beryllium and ytterbium, preferably, the atom source 201 is made of calcium metal. The atom source 201, when heated, may generate a vapor of atoms saturated with a plurality of atomic particles that may be ejected from the emission port 203 out of the housing 200 into the confinement region of the ion trap device 10.
Further, the atom source 201 may be in a powder or solid form, and in practice, the atom source 201 is processed into a cylindrical or rectangular cylindrical shape in order to better heat the atom source 201 and facilitate installation. Preferably, the atomic source 201 is processed into a cylindrical shape, which is convenient to install and uniform in overall heating, and is beneficial to the application of the ion trap device 10 in production.
Further, a heater 202 is installed inside the housing 200, the heater 202 wraps the periphery of the atom source 201, and the heater 202 is used for heating the atom source 201, so that the atom source 201 is excited to generate a large amount of atoms to form atom vapor, and the atom vapor is ejected from the ejection port 203 into the confinement region of the ion trap device 10. Specifically, the heater 202 includes a sleeve 206 and a heating wire 207, wherein the heating wire 207 is wound around the outer surface of the sleeve 206 and connected to a power source (not shown) through the cover plate 204 via a terminal 208. Preferably, the sealing plate 204 is a high and low temperature resistant insulator, and the terminal 208 is tightly installed through the sealing plate 204, or the terminal 208 and the sealing plate 204 may be molded by one-step casting, so as to improve the sealing performance of the sealing plate 204. The cover plate 204 may be tightly attached to the housing 200 by bolts or welding, and optionally, the cover plate 204 may be attached to the flange 205 of the housing 200 by bolts. To further enhance the sealing performance of the sealing plate 204, a sealing gasket (not shown) may be disposed to ensure the normal operation of the atom generator 20 and to prolong the service life of the apparatus or device.
Further, the sleeve 206 may be formed as a cylinder open at one end and closed at the other end, and likewise, may be a cylinder or a rectangular cylinder, preferably a cylinder. A sleeve 206 may be fitted around the outer periphery of the atom source 201, an open end 209 is used for diffusion of atom vapor, a spiral groove (not shown) is formed on the outer surface of the sleeve 206, a heating wire 207 is wound in the groove, both ends are connected to a terminal 208, and the terminal 208 is connected to an external power source. In particular, the sleeve 206 is made of a thermally conductive, high temperature insulating material that is capable of rapidly transferring heat to the atom source 201. Preferably, the sleeve 206 is made of a ceramic, such as aluminum nitride or silicon nitride ceramic. The ceramic has good thermal stability and thermal conductivity, is very suitable for manufacturing the heater 202 of the ion generator, improves the production benefit, and is beneficial to the production application of the ion trap device 10 or equipment.
In some embodiments, the heater 202 is provided with an insulating tube 210 at the periphery, and the insulating tube 210 can be formed into a hollow cylinder and sleeved on the periphery of the sleeve 206. The heat insulating pipe 210 is made of an insulating material having a low thermal conductivity, such as glass fiber, asbestos, or rock wool. The heat insulation insulating tube 210 is used for slowing down the outward loss of heat when the heating wire 207 inside is electrified for heating, so that the heat of the heating wire 207 can be absorbed by the atom source 201 inside to the maximum extent, and the heating efficiency is improved.
In some embodiments, springs 211 are respectively disposed at two ends inside the housing 200, the springs 211 may be compressed springs 211, and the two springs 211 limit the atom source 201 to the middle of the housing 200. The arrangement of the spring 211 can ensure that a certain distance exists between the atom source 201 and the emission hole, so that atom steam has certain directivity when being sprayed out, and the pollution of atoms to the ion trap is avoided; in addition, the spring 211 can also ensure the effective insulation distance between the heating wire 207 and the housing, avoid short circuit, ensure the normal operation of the ion trap device 10 or equipment, and improve the quality of the equipment.
In some embodiments, as shown in fig. 3-6, the ion trap device 10 is provided with a trap housing 100, the trap housing 100 is provided with a plurality of laser windows 101, the laser windows 101 are used for laser to enter the inside of the trap housing 100; a plurality of blade holders 102 are arranged inside the trap shell 100; the first blade 103 and the second blade 104 are alternately arranged on the blade holder 102; the first blade 103 is connected to a direct current power supply, the second blade 104 is connected to a radio frequency signal, the first blade 103 and the second blade 104 generate an trapping electric field, and the first blade 103 and the second blade 104 surround to form a trapping channel 2.
Further, the trap housing 100 is formed as a symmetrical hollow octagonal cylinder, forming 2 symmetrical large area horizontal sides 105, 2 small area vertical sides 106, and 4 symmetrical small area inclined sides 107. Well casing 100 may be fabricated from oxygen-free copper or stainless steel or other non-magnetic metal, and preferably well casing 100 is fabricated from oxygen-free copper to facilitate the forming of well casing 100 and heat transfer. The inner side of the 4 small area inclined surfaces 107 of the trap housing 100 is provided with 4 symmetrical blade holders 102, the blade holders 102 are in a shape similar to a 7-shaped block, and the structures of the 4 blade holders 102 are the same.
Further, the blade holder 102 may be made of high thermal conductivity ceramic, and the high thermal conductivity ceramic material is generally mainly made of oxide, nitride, carbide, boride, etc., such as AlN, BeO, Si3N4, SiC, BN, etc., and mainly plays roles of insulation and thermal conductivity. Preferably, the blade holder 102 is made from beryllium oxide ceramic. The blade holder 102 is provided with a blade mounting open slot 108 for positioning and mounting the blade, the whole structure is compact, the integration of the ion trap device 10 is facilitated, and the production of the low-temperature ion trap can be finally realized.
In some embodiments, the side of the tip holder 102 is processed into 5 relatively shallow wire grooves 109 by micro-machining, a conductive film 110 is attached in the wire grooves 109, the conductive film 110 is a metal film, preferably, the metal film is plated with gold material, and the stability of the ion trap device 10 can be ensured by manufacturing the metal film with gold material.
Furthermore, 5 mounting holes (not shown) are formed in the opening groove 108, the blade can be mounted on the blade holder 102 through the 5 mounting holes, the mounting holes are used as electrical connection terminals, and the circular ring connecting sheet (not shown) is fixedly connected with the pole piece of the blade through the fastening screw, so that the conductor film 110 is communicated with the pole piece, and further, a direct current signal or a radio frequency signal of the conductor film 110 is input to the pole piece, thereby optimizing a circuit of the structure and enabling the ion trap device 10 to be compact and integrated integrally.
Furthermore, 6 positioning columns 112 are formed on the opposite side of the open slot 108 of the blade holder 102, i.e. the top of the blade holder 102, and the 6 positioning columns 112 are directly embedded and mounted on the trap housing 100, so that the structure is more compact. Specifically, the positioning pillar 112 may be formed as a cylinder or a rectangular body, and preferably, the positioning pillar 112 is a cylinder; correspondingly, 6 through holes 113 are processed on the 4 small-area inclined surfaces 107 of the trap housing 100, and the through holes 113 are tightly fitted with the positioning columns 112. A right-angle through hole 114 is formed from the top surface of the positioning post 112 to the end of the side wire groove 109 of the blade holder 102, so that the right-angle through hole 114 is in communication with the wire groove 109, the right-angle through hole 114 is mounted on a welding post 115 at the direction toward the wire groove 109, and the welding post 115 and the conductive film 110 can be connected by welding to form a current path.
Furthermore, a connector 116 is installed on the outer side of the trap housing 100 corresponding to the positioning column 112, the connector 116 is an SMP rf connector 116, the SMP connector 116 has a right-angled through hole 114 through which the cell is inserted into the positioning column 112 to be conducted with the welding column 115, and the SMP connector 116 is used for connecting a direct current or an rf signal to the conductor film 110 and finally transmitting the direct current or the rf signal to the first blade 103 or the second blade 104, so that a trapping channel 2 in the center of the ion trap device 10 generates a pseudo potential to form a trapping electric field, thereby trapping ions. The SMP connectors 116 may be bolted or otherwise securely attached to the trap housing 100 by welding or adhesive. In actual operation, the 4 blades are two groups of blades with different connection methods, two blades of the first blade 103 group are connected with a direct current signal, and two blades of the second blade 104 group are connected with a radio frequency signal.
Further, the first blade 103 and the second blade 104 can be made of high thermal conductivity ceramic, and the high thermal conductivity ceramic material is mainly made of oxide, nitride, carbide, boride, etc., such as AlN, BeO, Si3N4, SiC, BN, etc., and mainly plays roles of insulation and thermal conductivity. Preferably, the first blade 103 and the second blade 104 are both made of beryllium oxide ceramic. The surfaces of the first blade 103 and the second blade 104 are plated with a conductive layer (not shown) to form a signal source path. The conductor layer is preferably plated with a gold material, and the stability of the ion trap device can be ensured by manufacturing the conductor layer with the gold material.
Furthermore, the first blade 103 and the second blade 104 both have 5 independent pole pieces, when a dc signal is input to the first blade 103 set, capacitors 118 capable of filtering are respectively disposed at output ends (i.e., front ends of the first blade 103) of 5 connectors 116 occupied by the 5 connectors 116, and the capacitors 118 can be directly welded and attached to the conductor film 110 by welding to form an integrated circuit with the conductor film 110, thereby simplifying circuit connection. The capacitor 118 may filter the dc current to stabilize the voltage, so as to ensure the stability of the electric field of the ion trap device 10, and the other connector 116 may be grounded to provide a ground terminal for the capacitor 118 at the rear end of the above 5 connectors 116, so as to ensure the normal operation of the circuit. When the rf signal is input to the second blade 104, one of the connectors 116 is occupied, and the others can be used as a spare, so that the ion trapping function can be realized only by inputting one rf signal in the ion trap device 10, thereby simplifying circuit connection and preventing short circuit, open circuit and other problems caused by disordered wiring.
Further, the laser window 101 is disposed on two large-area sides (i.e. horizontal sides 105) and two small-area sides (i.e. vertical sides 106) of the trap housing 100, and an optical window 117 is mounted on the laser window 101, where the optical window 117 may be made of fused silica and attached with an antireflection film (not shown). The antireflection film is preferably selected according to the wavelength of the transmitted laser, so that the laser transmittance can be improved, and the use effect of the ion trap device 10 can be ensured. The 4 optical window sheets 117 respectively correspond to four opening directions of the ion trap device 10, and the 4 optical window sheets 117 provide abundant laser incidence angles, so that the requirements of laser channels such as atom two-photon ionization, ion laser cooling, state detection, ion manipulation and the like are met.
In some embodiments, 4 through slots 8 are similarly provided on the edge sides of the first blade 103 and the second blade 104, and the through slots 8 function as: when ion trap device 10 circular telegram, lead to the position of groove 8 and can make to form more stable voltage between the pole piece to form stable imprisoning electric field at imprisoning passageway 2, imprisoning the ion, can further improve the imprisoning efficiency of ion trap device 10.
In some embodiments, the low-temperature ion trap system of the present invention may be installed in a low-temperature vacuum chamber of a closed space through the base 1, and the trap housing 100 is directly connected to a low-temperature cold source to form a cold shield, which can effectively condense and adsorb residual gas in the vacuum chamber, and form an ultra-high vacuum around the ion trap device 10; in addition, the trap shell 100 can also shield the heating effect of external black body background radiation on ions, improve the duration of ion crystals, prolong the quantum bit coherence time, greatly improve the fidelity of a quantum logic gate, and improve the performance stability and the working accuracy of an ion trap system.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (10)

1. A low temperature ion trap system, comprising: the ion trap device is covered on the base, the cover plate encapsulates the ion trap device, and the atom generator is arranged on the base and is coaxial with the ion trap device; the atom generator is provided with an emission port for atom emission, and the emission port is over against the trapping channel of the ion trap device; the ion trap device generates a trapping electric field which ionizes atoms and traps the ions in the trapping channel.
2. The cryogenic ion trap system of claim 1, wherein the atom generator comprises a housing and an atom source and heater mounted within the housing; the emission port is arranged at one end of the shell, and the other end of the emission port is packaged through a sealing plate; the heater heats the atom source to excite the atom source to emit atoms, and the atoms are ejected out of the shell through the ejection port.
3. The cryogenic ion trap system of claim 2, wherein the heater is provided with a post, the heater being connected to a power source through the post.
4. The low temperature ion trap system of claim 2, wherein the atom source is fabricated using one or more metals of calcium, cesium, beryllium and ytterbium.
5. The low temperature ion trap system of claim 4, wherein the atom source is formed in a cylindrical shape.
6. The cryogenic ion trap system of claim 1 wherein the ion trap device has a trap housing, the trap housing having laser windows therein for laser access to the interior of the trap housing; a plurality of blade holders are arranged in the trap shell, and first blades and second blades are alternately arranged on the blade holders; the first blade is connected to a direct current power supply, the second blade is connected to a radio frequency signal, and the first blade and the second blade surround to form the trapping channel.
7. The cryogenic ion trap system of claim 6, wherein the laser window is configured with an optical window made of fused silica, the optical window having an anti-reflective coating attached thereto.
8. The cryogenic ion trap system of claim 6, wherein the first blade and the second blade are both made of ceramic and have a surface coated with a conductive layer, the conductive layer forming a plurality of separate pole pieces, the pole pieces being connected to the DC power source or the RF signal.
9. The cryogenic ion trap system of claim 8, wherein the first blade and the second blade have open slots on the blade edge side.
10. The system of claim 8, wherein a filter capacitor is disposed at a front end of the first blade, the filter capacitor is attached to the blade holder, an output end of the filter capacitor is connected to the first blade, and an input end of the filter capacitor is connected to the dc power supply.
CN202111490378.0A 2021-12-08 2021-12-08 Low-temperature ion trap system Pending CN114023625A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116994790A (en) * 2023-09-25 2023-11-03 国开启科量子技术(安徽)有限公司 Ion trap device and quantum computing device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116994790A (en) * 2023-09-25 2023-11-03 国开启科量子技术(安徽)有限公司 Ion trap device and quantum computing device
CN116994790B (en) * 2023-09-25 2024-01-05 国开启科量子技术(安徽)有限公司 Ion trap device and quantum computing device

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