CN114023622A - Inductively coupled plasma device and semiconductor thin film device - Google Patents
Inductively coupled plasma device and semiconductor thin film device Download PDFInfo
- Publication number
- CN114023622A CN114023622A CN202210002453.2A CN202210002453A CN114023622A CN 114023622 A CN114023622 A CN 114023622A CN 202210002453 A CN202210002453 A CN 202210002453A CN 114023622 A CN114023622 A CN 114023622A
- Authority
- CN
- China
- Prior art keywords
- cover plate
- isolation cover
- inductively coupled
- coupled plasma
- plasma device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses an inductively coupled plasma device and semiconductor thin film equipment, the inductively coupled plasma device includes: the plasma device comprises a plasma device body and an isolation cover plate, wherein the isolation cover plate is covered on the plasma device body; the isolation cover plate comprises: an isolation cover plate body; the convex structure is arranged on the inner side surface of the isolation cover plate body facing the cavity of the inductively coupled plasma device; the protruding structure and the isolation cover plate body are coaxially arranged, so that the thickness of the center of the isolation cover plate is larger than that of the edge of the isolation cover plate. According to the invention, the bulge structure is added on one surface of the isolation cover plate of the inductively coupled plasma device facing the inner side of the cavity, so that the electric field intensity distribution in the cavity of the inductively coupled plasma device is changed under the condition that the devices such as an antenna of the inductively coupled plasma device are not changed, and the uniformity of the radial distribution of the plasma in the cavity is further realized by adjusting the magnetic field intensity distribution.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an inductively coupled plasma device and semiconductor thin film equipment.
Background
In the prior art, in the process of generating Plasma by using an ICP (inductively Coupled Plasma) device, a plurality of sets of antennas (antenna) connected to a Radio Frequency (RF) power supply and an impedance matching network (impedance matching network) are generally used to generate a radio frequency magnetic field in a vacuum chamber gas through an isolation cover plate by electromagnetic induction, thereby causing circulating electron flow in the gas to generate Plasma. The plasma so generated is used to etch or deposit a species on a substrate in the vacuum chamber. The magnetic flux caused by the antenna structure design presents uneven distribution on the surface of the isolation cover plate, and the electric field generated by induction also has corresponding uneven distribution, so that the plasma is not uniform in spatial distribution. Therefore, in a device using multiple sets of antennas, a radially uniform magnetic intensity distribution in the reaction chamber is usually obtained by changing the power distributed by the antennas, the shape of the antennas, or the structure of the chamber, so as to control the radial uniformity of the ion density in the plasma, thereby meeting the requirement of plasma uniformity at the surface position of a wafer (placed on a stage). However, as the size of the substrate to be processed is increased, the antenna design requirements (the length and the number of turns of the antenna, etc.) are limited, the effects of these adjustment methods on the uniformity of the ion distribution of the plasma are increasingly limited, and meanwhile, increasing the size of the antenna and changing the structure of the antenna can cause large changes in the electrical properties such as the impedance of the whole antenna, etc., and more stringent requirements are made on the design of the RF power supply and the impedance matching network.
The main shape feature of existing insulating cover plates is a disk-like structure of uniform thickness. The isolation cover plate separates the circuit part such as the antenna generating the electromagnetic field from the plasma in the vacuum chamber, and the structural shape of the isolation cover plate has a significant influence on the uniformity of the radial distribution of the plasma.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide an inductively coupled plasma device and a reported thin film device to adjust the uniformity of the radial distribution of plasma near the surface of a substrate.
In order to solve the above technical problem, according to an aspect of the present invention, there is provided an inductively coupled plasma apparatus including: the plasma device comprises a plasma device body and an isolation cover plate, wherein the isolation cover plate is covered on the plasma device body;
the isolation cover plate comprises:
an isolation cover plate body;
the convex structure is arranged on the inner side surface of the isolation cover plate body facing the cavity of the inductively coupled plasma device;
the protruding structure and the isolation cover plate body are coaxially arranged, so that the thickness of the center of the isolation cover plate is larger than that of the edge of the isolation cover plate.
In some embodiments, the raised structure is a disk-like structure, and the disk-like structure is a centrosymmetric structure.
In some embodiments, the raised structure is a plurality of disk-like structures, the plurality of disk-like structures being centrosymmetric structures;
the plurality of disc-shaped structures are sequentially overlapped on the inner side face, and the area of the disc-shaped structures facing the inner side face is sequentially increased.
In some embodiments, one side of the raised structure is a flat surface connected to the inner side surface, and the side opposite the flat surface is a spherical surface.
In some embodiments, the projection structure comprises:
the columnar structure is arranged on the inner side face and is coaxially arranged with the isolation cover plate body;
and the at least one annular structure is arranged on the inner side surface, sleeved on the outer side of the columnar structure and coaxially arranged with the isolation cover plate body.
In some embodiments, the annular structure is one, and the height of the columnar structure is greater than the thickness of the annular structure.
In some embodiments, the number of the ring structures is multiple, the plurality of ring structures are sequentially sleeved outside the columnar structure, and the height of the columnar structure is greater than the thickness of the plurality of ring structures;
from the direction of column structure towards isolation apron body edge, it is a plurality of the thickness of loop configuration reduces in proper order.
In some embodiments, the center point of the protruding structure has a thickness of 30mm to 100 mm.
In some embodiments, the isolation cover plate body is integrally formed with the raised structure.
According to another aspect of the present invention, there is provided a semiconductor thin film device comprising the inductively coupled plasma apparatus according to any of the above embodiments.
Compared with the prior art, the invention has obvious advantages and beneficial effects. By the technical scheme, the inductively coupled plasma device and the semiconductor thin film equipment can achieve considerable technical progress and practicability, have industrial wide utilization value and at least have the following advantages:
(1) according to the invention, the bulge structure is added on one surface of the isolation cover plate of the inductively coupled plasma device, which faces towards the inner side of the cavity, so that the electric field intensity distribution in the cavity of the inductively coupled plasma device is changed under the condition that the structures such as an antenna of the inductively coupled plasma device are not changed, and the uniformity of the radial distribution of the plasma in the cavity is further realized by adjusting the magnetic field intensity distribution.
(2) According to the invention, the bulge structure is additionally arranged on one side of the isolation cover plate facing the cavity, so that the structural strength of the isolation cover plate is effectively improved.
(3) The isolation cover plate of the inductively coupled plasma device is simple in structure, easy to process, capable of being suitable for different inductively coupled plasma devices and high in universality.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
FIG. 1 is a schematic diagram of an inductively coupled plasma apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an isolation cover plate of an inductively coupled plasma apparatus according to a first embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an isolation cover plate of the inductively coupled plasma apparatus shown in FIG. 2;
fig. 4 is a schematic structural diagram of an isolation cover plate of an inductively coupled plasma device according to a second embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of an isolation cover plate of the inductively coupled plasma apparatus shown in FIG. 4;
fig. 6 is a schematic structural diagram of an isolation cover plate of an inductively coupled plasma apparatus according to a third embodiment of the present invention;
fig. 7 is a schematic structural diagram illustrating an isolation cover plate of an inductively coupled plasma apparatus according to a fourth embodiment of the present invention;
fig. 8 is a schematic cross-sectional view illustrating an isolation cover plate of the inductively coupled plasma apparatus shown in fig. 7.
[ notation ] to show
1: radio frequency power supply
2: impedance matching network
3: antenna with a shield
4: vacuum chamber
5: isolation cover plate
51: isolation cover plate body
52: bump structure
521: columnar structure
522: cyclic structure
53: groove-like structure
6: wafer
7: carrying platform
8: injection hole
9: air pump interface
10: a side wall.
Detailed Description
In order to further explain the present invention, the following detailed description of an inductively coupled plasma device and a semiconductor thin film apparatus according to the present invention will be made with reference to the accompanying drawings.
The inductively coupled plasma device comprises a radio frequency power supply 1, an impedance matching network 2 (impedance matching network), a plurality of groups of antennas 3 (antenna) and a vacuum chamber 4. The radio frequency power supply 1, the impedance matching network 2 and the antenna 3 are connected in sequence to generate an electromagnetic field in the vacuum chamber 4, and then the gas in the vacuum chamber 4 generates plasma through electromagnetic induction.
A three-dimensional or planar antenna 3 in the inductively coupled plasma device is arranged close to an isolation cover plate 5 of a vacuum chamber 4 and is connected with a radio frequency power supply 1 and an impedance matching network 2, and the radio frequency power supply 1 maximizes the power transmitted to the antenna 3 by adjusting the impedance matching network 2. The radio frequency current (RF current) loaded into the antenna 3 generates an induced electromagnetic field around the antenna 3 and penetrates through the isolation cover plate 5 (dielectric) to reach the vacuum chamber 4, and the gas in the vacuum chamber 4 is ionized in the induced electromagnetic field to form plasma, so that the wafer 6 (placed on the carrier 7) is processed by the plasma. The process gas is injected into the vacuum chamber 4 through the gas injection hole 8, and is discharged out of the vacuum chamber 4 through the chamber gas pump port 9, thereby forming a negative pressure in the vacuum chamber 4. Therefore, there is a pressure difference between the chamber in which the antenna 3 is located and the vacuum chamber 4, and a certain structural strength is required for the isolation cover 5.
The core of the design of the insulating cover plate 5 is concentrated on the surface facing the vacuum chamber 4, which exhibits a central symmetry in shape. The surface of the isolating cover plate 5 facing the antenna 3 is generally planar.
Each side wall 10 of the vacuum chamber 4 is in a grounded state, plasma is concentrated in the central area (an electrically neutral area) of the chamber, a transition layer-a sheath layer (an electrically non-neutral area) with a certain thickness is formed at a position close to the side wall 10, the distribution of the plasma is influenced by the distribution of the electric field intensity in the chamber, the distribution of the electric field intensity in the chamber can be directly changed by changing the structure of the lower surface of the quartz window, and the purpose of changing the distribution of the plasma at a certain depth position below the quartz window by adjusting the electric field intensity is achieved.
Based on the above problems, an embodiment of the present invention provides an inductively coupled plasma device, which includes a plasma device body and an isolation cover plate, where the isolation cover plate is covered on the plasma device body. As shown in fig. 1 to 8, the insulating cover 5 includes: isolating the cover plate body 51 and the projection structure 52.
Wherein the protruding structure 52 is disposed on the inner side of the isolation cover plate body 51 facing the vacuum chamber 4 of the inductively coupled plasma device.
More specifically, the surface of the isolation cover 5 facing the antenna 3 is provided in a planar structure, and the surface of the isolation cover 5 facing the vacuum chamber 4 is provided in a convex structure 52.
The protruding structure 52 is coaxially disposed with the isolation cover plate body 51 such that the thickness of the center of the isolation cover plate 5 is greater than the thickness of the edge of the isolation cover plate 5.
The convex structure 52 and the isolation cover plate body 51 are both arranged in a centrosymmetric structure, and the coaxial arrangement of the convex structure 52 and the isolation cover plate body 51 means that the central point of the convex structure 52 coincides with the central point of the isolation cover plate body 51.
According to the invention, the convex structure 52 is additionally arranged on the inner side surface of the isolation cover plate body 51 to change the thickness distribution of the isolation cover plate 5, the thickness of the middle part of the isolation cover plate 5 is increased, so that the strength of an electromagnetic field of an area covered by the middle part of the isolation cover plate 5 in the vacuum chamber 4 is weakened, the concentration reduction of plasma in the radial area of the middle part of the vacuum chamber 4 is further reduced, and the distribution of the plasma in the vacuum chamber 4 is more uniform.
In one embodiment, as shown in fig. 2 and 3, the raised structure 52 is a disk-like structure that is a centrosymmetric structure. The disc-shaped structure is disposed on the inner side surface of the isolation cover plate body 51, and the center point of the disc-shaped structure coincides with the center point of the isolation cover plate body 51.
The disc-shaped structure may be a disc-shaped structure, and may also be a polygonal structure such as a square, a diamond, etc., and the invention is not limited thereto. Meanwhile, the projected area of the disc-shaped structure is smaller than that of the isolation cover plate body 51.
Further, the projected area of the disk-like structure is smaller than the area of the wafer 6 placed in the vacuum chamber 4. For example, when the disk-shaped structure is a disk-shaped structure, the diameter is 200mm to 400 mm. When the wafer 6 placed in the vacuum chamber 4 is 12 inches, the diameter of the disk-shaped structure is less than 300 mm.
In one embodiment, the thickness of the disc-shaped structure is 30mm to 100 mm.
In one embodiment, as shown in fig. 4 and 5, the protrusion structure 52 is a plurality of disk-shaped structures, and each of the plurality of disk-shaped structures is a central symmetrical structure. The plurality of disc-shaped structures are sequentially overlapped on the inner side surface of the isolation cover plate body 51, the center points of the plurality of disc-shaped structures are overlapped with the center point of the isolation cover plate body 51, and the area of the disc-shaped structures facing the inner side surface of the isolation cover plate body 51 is sequentially increased.
That is, the area of the disk-like structure closer to the shield cover body 51 is larger, and a plurality of disk-like structures are stacked in sequence in a pagoda shape.
The plurality of disc-shaped structures may be disc-shaped structures, and may also be polygonal structures such as squares and diamonds, and the invention is not limited thereto. Meanwhile, the projected area of the disc-shaped structure closest to the insulating cover plate body 51 is smaller than the projected area of the insulating cover plate body 51.
Further, the projected area of the disk-like structure closest to the insulating cover plate body 51 is smaller than the area of the wafer 6 placed in the vacuum chamber 4. For example, when the disk-shaped structure is a disk-shaped structure, the diameter is 200mm to 400 mm. When the wafer 6 placed in the vacuum chamber 4 is 12 inches, the diameter of the disc-shaped structure is less than 300 mm.
In one embodiment, the overall thickness of the plurality of disc-shaped structures is 30mm to 100 mm. The plurality of disc-shaped structures may be provided with the same thickness, or may be provided with successively increasing or decreasing thicknesses, which is not limited by the present invention.
In one embodiment, as shown in FIG. 6, one side of the raised structure 52 is a planar structure and the side opposite the planar structure is a spherical structure. Specifically, the thickness of the protruding structure 52 gradually decreases from the center toward the edge, i.e., the center of the protruding structure 52 smoothly transitions to the edge of the protruding structure 52. The planar structure is connected to the inner side of the isolating cover plate body 51, and the spherical structure faces the inside of the vacuum chamber 4.
In this embodiment, the convex structure 52 is a centrosymmetric structure, and the center of the convex structure 52 coincides with the center of the isolation cover plate body 51. The projection area of the protruding structure 52 is smaller than or equal to the projection area of the isolation cover plate body 51.
Further, the projected area of the projection structure 52 is smaller than the area of the wafer 6 placed in the vacuum chamber 4. The diameter of the protruding structure 52 is 200 mm-400 mm. For example, when the wafer 6 placed in the vacuum chamber 4 is 12 inches, the diameter of the protrusion structure 52 is less than 300 mm.
In one embodiment, the thickness of the midpoint of the protrusion 52 is 30mm to 100 mm.
In one embodiment, as shown in fig. 7 and 8, the protruding structure 52 includes a pillar structure 521 and at least one ring structure 522. The columnar structure 521 is a centrosymmetric structure, is disposed on the inner side surface of the isolation cover plate body 51, and is disposed coaxially with the isolation cover plate body 51, that is, the center of the columnar structure 521 coincides with the center of the isolation cover plate body 51. At least one annular structure 522 is disposed on the inner side surface of the isolation cover plate body 51, and is sleeved on the outer side of the columnar structure 521, and a certain distance is disposed between the at least one annular structure 522 and the columnar structure 521. The annular structure 522 is a centrosymmetric structure, and the annular structure 522 is disposed coaxially with the isolation cover plate body 51, and the center of the annular structure 522 coincides with the center of the isolation cover plate body 51.
Specifically, the cross section of the columnar structure 521 may be circular, or may be polygonal such as square or diamond. The invention is not limited thereto. The ring structure 522 may be a circular ring structure, and may be a square or diamond structure, but the invention is not limited thereto.
In this embodiment, the ring structure 522 may be one, and the thickness of the one ring structure 522 is smaller than the height of the pillar structure 521. A groove-like structure 53 is formed between the ring-like structure 522 and the pillar-like structure 521.
Preferably, the height of the columnar structure 521 is 30mm to 100 mm.
In this embodiment, as shown in fig. 7, there may be a plurality of ring structures 522, and the plurality of ring structures 522 are sequentially sleeved on the outer side of the pillar structure 521. As shown in fig. 8, one groove-like structure 53 is formed between each two adjacent ring-like structures 522, and one groove-like structure 53 is also formed between the ring-like structure 522 closest to the columnar structure 521 and the columnar structure 521. The number of the groove-like structures 53 is the same as the number of the ring-like structures 522.
The height of the pillar structure 521 is greater than the thickness of the plurality of ring structures 522, and the thickness of the plurality of ring structures 522 decreases from the pillar structure 521 toward the edge of the isolation cover body 51.
Preferably, the height of the columnar structure 521 is 30mm to 100 mm.
In one embodiment, the isolation cover plate body 51 is integrally formed with the protrusion structure 52. The isolation cover plate 5 is generally made of quartz, ceramic, sapphire and the like, and the surface of the isolation cover plate can be subjected to surface coating treatment, wherein Y is commonly used2O3(yttria), Teflon, Si (silicon), Al2O3(alumina).
The embodiment of the invention also provides an inductively coupled plasma device, which comprises a Radio Frequency (RF) power supply, an impedance matching network (impedance matching network), a plurality of groups of antennas (antenna) and a vacuum chamber. Wherein, the isolation cover plate of the vacuum chamber is the isolation cover plate of the inductively coupled plasma device according to any of the above embodiments.
The embodiment of the invention also provides semiconductor thin film equipment which comprises the inductively coupled plasma device in any one of the embodiments.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. An inductively coupled plasma apparatus, comprising: the plasma device comprises a plasma device body and an isolation cover plate, wherein the isolation cover plate is covered on the plasma device body;
the isolation cover plate comprises:
an isolation cover plate body;
the convex structure is arranged on the inner side surface of the isolation cover plate body facing the cavity of the inductively coupled plasma device;
the protruding structure and the isolation cover plate body are coaxially arranged, so that the thickness of the center of the isolation cover plate is larger than that of the edge of the isolation cover plate.
2. The inductively coupled plasma device of claim 1, wherein the protrusion structure is a disk-shaped structure, and the disk-shaped structure is a central symmetrical structure.
3. The inductively coupled plasma device of claim 1, wherein the raised structures are a plurality of disk-shaped structures, and the plurality of disk-shaped structures are centrosymmetric structures;
the plurality of disc-shaped structures are sequentially overlapped on the inner side face, and the area of the disc-shaped structures facing the inner side face is sequentially increased.
4. The inductively coupled plasma device of claim 1, wherein one side of the raised structure is a flat surface, the flat surface is connected to the inner side, and one side opposite the flat surface is a spherical surface.
5. The inductively coupled plasma device of claim 1, wherein the raised structure comprises:
the columnar structure is arranged on the inner side face and is coaxially arranged with the isolation cover plate body;
and the at least one annular structure is arranged on the inner side surface, sleeved on the outer side of the columnar structure and coaxially arranged with the isolation cover plate body.
6. The inductively coupled plasma device of claim 5, wherein the annular structure is one, and the height of the columnar structure is greater than the thickness of the annular structure.
7. The inductively coupled plasma device of claim 5, wherein the number of the ring structures is plural, the plural ring structures are sequentially sleeved outside the pillar structures, and the height of the pillar structures is greater than the thickness of the plural ring structures;
from the direction of column structure towards isolation apron body edge, it is a plurality of the thickness of loop configuration reduces in proper order.
8. The inductively coupled plasma device of any of claims 1-7, wherein the center point of the raised structure has a thickness of 30mm to 100 mm.
9. The inductively coupled plasma device of any of claims 1-7, wherein the isolation cover plate body is integrally formed with the raised structure.
10. A semiconductor thin film device comprising the inductively coupled plasma apparatus as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210002453.2A CN114023622B (en) | 2022-01-05 | 2022-01-05 | Inductively coupled plasma device and semiconductor thin film device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210002453.2A CN114023622B (en) | 2022-01-05 | 2022-01-05 | Inductively coupled plasma device and semiconductor thin film device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114023622A true CN114023622A (en) | 2022-02-08 |
| CN114023622B CN114023622B (en) | 2022-04-08 |
Family
ID=80069253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210002453.2A Active CN114023622B (en) | 2022-01-05 | 2022-01-05 | Inductively coupled plasma device and semiconductor thin film device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114023622B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5690781A (en) * | 1994-09-16 | 1997-11-25 | Nec Corporation | Plasma processing apparatus for manufacture of semiconductor devices |
| KR20030077195A (en) * | 2002-03-25 | 2003-10-01 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma etching system, Apparatus combined that, and Apparatus and Method for testing that |
| CN1536625A (en) * | 2002-03-25 | 2004-10-13 | 自适应等离子体技术株式会社 | Plasma etching method and equipment for making semiconductor device |
| TW200948216A (en) * | 2008-02-08 | 2009-11-16 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
| US20100095889A1 (en) * | 2008-08-20 | 2010-04-22 | Takayuki Kai | Plasma doping apparatus |
| JP2010251708A (en) * | 2009-03-25 | 2010-11-04 | Tokyo Electron Ltd | Cover fixture and cover fixing device of induction coupling plasma processing apparatus |
| CN102378462A (en) * | 2010-08-04 | 2012-03-14 | 东京毅力科创株式会社 | Plasma processing apparatus |
| US20150068682A1 (en) * | 2013-09-06 | 2015-03-12 | Applied Materials, Inc. | Power deposition control in inductively coupled plasma (icp) reactors |
-
2022
- 2022-01-05 CN CN202210002453.2A patent/CN114023622B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5690781A (en) * | 1994-09-16 | 1997-11-25 | Nec Corporation | Plasma processing apparatus for manufacture of semiconductor devices |
| KR20030077195A (en) * | 2002-03-25 | 2003-10-01 | 어댑티브프라즈마테크놀로지 주식회사 | Plasma etching system, Apparatus combined that, and Apparatus and Method for testing that |
| CN1536625A (en) * | 2002-03-25 | 2004-10-13 | 自适应等离子体技术株式会社 | Plasma etching method and equipment for making semiconductor device |
| TW200948216A (en) * | 2008-02-08 | 2009-11-16 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
| US20100095889A1 (en) * | 2008-08-20 | 2010-04-22 | Takayuki Kai | Plasma doping apparatus |
| JP2010251708A (en) * | 2009-03-25 | 2010-11-04 | Tokyo Electron Ltd | Cover fixture and cover fixing device of induction coupling plasma processing apparatus |
| CN102378462A (en) * | 2010-08-04 | 2012-03-14 | 东京毅力科创株式会社 | Plasma processing apparatus |
| US20150068682A1 (en) * | 2013-09-06 | 2015-03-12 | Applied Materials, Inc. | Power deposition control in inductively coupled plasma (icp) reactors |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114023622B (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7385621B2 (en) | Ion-ion plasma atomic layer etching process and reactor | |
| US20200357606A1 (en) | Plasma processing apparatus and plasma processing method | |
| KR100826488B1 (en) | Method and apparatus for producing uniform process rates | |
| JP3482904B2 (en) | Plasma processing method and apparatus | |
| JP4869059B2 (en) | Antenna, plasma processing apparatus, and substrate processing method | |
| US6806437B2 (en) | Inductively coupled plasma generating apparatus incorporating double-layered coil antenna | |
| US5824605A (en) | Gas dispersion window for plasma apparatus and method of use thereof | |
| KR101011580B1 (en) | Externally excited torroidal plasma source with magnetic control of ion distribution | |
| JP3438696B2 (en) | Plasma processing method and apparatus | |
| KR20170095151A (en) | Chamber member of plasma source and pedestal with radially outward positioned lift pins for translation of substrate c-ring | |
| US20060175015A1 (en) | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source | |
| US20040040931A1 (en) | Plasma processing method and plasma processor | |
| KR101496841B1 (en) | Compound plasma reactor | |
| KR100842947B1 (en) | Plasma processing method and plasma processor | |
| CN111354672B (en) | Electrostatic chuck and plasma processing apparatus | |
| JP3254069B2 (en) | Plasma equipment | |
| CN114023622B (en) | Inductively coupled plasma device and semiconductor thin film device | |
| CN110770880B (en) | Plasma processing apparatus | |
| CN111463094A (en) | Atomic layer etching equipment and atomic layer etching method | |
| KR101139829B1 (en) | Apparatus for multi supplying gas and plasma reactor with apparatus for multi supplying gas | |
| KR20020035249A (en) | Device and Method for Generating Capacitively Coupled Plasma Enhanced Inductively Coupled Plasma | |
| KR101200743B1 (en) | Multi inductively coupled plasma reactor and method thereof | |
| CN112071734A (en) | Insulating material window, manufacturing method thereof and inductively coupled plasma processing device | |
| KR20040021809A (en) | Inductively coupled plasma generating apparatus having antenna with different cross sections | |
| CN110415948B (en) | Three-dimensional four-spiral inductance coupling coil |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |