CN114019411A - Detection method for silicon element - Google Patents

Detection method for silicon element Download PDF

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Publication number
CN114019411A
CN114019411A CN202111262441.5A CN202111262441A CN114019411A CN 114019411 A CN114019411 A CN 114019411A CN 202111262441 A CN202111262441 A CN 202111262441A CN 114019411 A CN114019411 A CN 114019411A
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CN
China
Prior art keywords
module
fault
bridge arm
output end
analog circuit
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Pending
Application number
CN202111262441.5A
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Chinese (zh)
Inventor
綦新桥
李培璐
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CRRC Luoyang Locomotive Co Ltd
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CRRC Luoyang Locomotive Co Ltd
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Application filed by CRRC Luoyang Locomotive Co Ltd filed Critical CRRC Luoyang Locomotive Co Ltd
Priority to CN202111262441.5A priority Critical patent/CN114019411A/en
Publication of CN114019411A publication Critical patent/CN114019411A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52Testing for short-circuits, leakage current or ground faults

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)

Abstract

The invention discloses a detection method for a silicon element, which comprises an isolation transformer, an analog circuit comparator, a first module, a second module and a third module, wherein the output end of the isolation transformer is connected with the output end of the analog circuit comparator, and the output end of the analog circuit comparator is respectively connected with the input ends of the first module and the second module; the output end of the first module is divided into two paths, wherein one path is connected with the second module, and the other path is connected with the third module, and the invention has the beneficial effects that: the working process of the silicon element can be dynamically detected, and the fault detection is found in the sprouting state; a fault bridge arm can be detected and indicated specifically, so that the fault can be processed quickly; the volume is small and exquisite, simple to operate, and the wiring is simple, and fault indication is directly perceived.

Description

Detection method for silicon element
Technical Field
The invention belongs to the technical field of rectifier cabinet silicon element dynamic detection, and particularly relates to a silicon element dynamic detection method for detecting and indicating a rectifier cabinet silicon element short-circuit fault and timely searching and removing the fault.
Background
A rectifier cabinet is a device that converts an ac power supply into a dc power supply by utilizing the unidirectional conductivity of a silicon element, and is an important device of an electric power system. The occurrence of short circuit or breakdown fault of the silicon element seriously affects the normal operation of the power system.
The silicon element short circuit or breakdown failure is not instantaneous and there is a process from germination to short circuit or breakdown. If the device can be found in the bud, the device can possibly avoid short circuit or breakdown fault of the silicon element, and the normal operation of the power system is effectively guaranteed.
The existing detection means can not track the dynamic process of the silicon element, and can only find out the fault when overcurrent protection occurs after the silicon element is burnt.
Disclosure of Invention
In order to solve the technical problems, the invention provides a detection method for a silicon element, which has the advantages of small and reasonable structural design, convenient installation and simple wiring, and solves the problems that the dynamic process of the silicon element cannot be tracked and the fault can only be found by overcurrent protection after the silicon element is burnt; meanwhile, the problems that faults cannot be found in the early stage, loss is large after the silicon element is burnt, and fault processing is difficult can be solved.
The technical scheme adopted by the invention is as follows: a detection method for a silicon element comprises an isolation transformer, an analog circuit comparator, a first module, a second module and a third module, wherein the output end of the isolation transformer is connected with the output end of the analog circuit comparator, and the output end of the analog circuit comparator is respectively connected with the input ends of the first module and the second module; the output end of the first module is divided into two paths, one path is connected with the second module, the other path is connected with the third module, the three-phase alternating voltage input isolation transformer of the rectifier cabinet to be tested is converted into a pulse signal through an analog circuit comparator, the pulse signal is identified through the first module to generate fault information, the pulse signal is identified through the second module to correspond to a bridge arm signal, the bridge arm on which the fault occurs is identified through the third gate circuit module, and the fault information is displayed through an indicator lamp. When the rectifier cabinet works normally, the first module identifies no fault, and all the indicator lamps are not on; and if a certain bridge arm has a fault, the module I identifies and generates a fault signal, the module III outputs corresponding bridge arm fault information by combining bridge arm information of the module II, and the corresponding bridge arm indicator lamp is lightened. The three-phase rectifier cabinet has six bridge arms, and positive end bridge arm is three: u +, V +, W +, the negative end bridge arm is three: u-, V-, W-.
The isolation transformer is a three-phase alternating current transformer.
The analog circuit comparator is composed of an analog comparator circuit.
And the first module consists of a NOR gate and a trigger.
And the second module consists of a trigger.
And the third module consists of a gate circuit.
The output end of the isolation transformer is connected with the output end of the analog circuit comparator; the purpose of this is: the isolation transformer is a transformer with an input winding and an output winding electrically isolated, the isolation transformer is used for avoiding touching an electrified body accidentally, and the isolation of the transformer is used for isolating respective currents of primary and secondary winding coils; the three-phase alternating current of the rectifier cabinet to be detected is input into an isolation transformer and can be converted into a pulse signal after passing through an analog circuit comparator, so that the transmission and detection of the next step of signals are realized.
The output end of the analog circuit comparator is respectively connected with the input ends of the first module and the second module; the output end of the first module is divided into two paths, wherein one path is connected with the second module, and the other path is connected with the third module; the purpose of this is: the module I consists of a NOR gate and a trigger, the module II consists of a trigger, and the module III consists of a gate circuit, so that fault detection can be finally realized.
The invention has the beneficial effects that:
1. the working process of the silicon element can be dynamically detected, and the fault detection is found in the sprouting state;
2. a fault bridge arm can be detected and indicated specifically, so that the fault can be processed quickly;
3. the volume is small and exquisite, simple to operate, and the wiring is simple, and fault indication is directly perceived.
Drawings
Fig. 1 is a circuit diagram of the present invention.
The labels in the figure are: 1. an isolation transformer; 2. an analog circuit comparator; 3. a first module; 4. a second module; 5. and a third module.
Detailed Description
The following detailed description of embodiments of the invention is provided in connection with the accompanying drawings.
As shown in the figure, the rectifier cabinet silicon element dynamic detection device comprises an isolation transformer 1, an analog circuit comparator 2, a module I3, a module II 4 and a module III 5, wherein the output end of the isolation transformer 1 is connected with the output end of the analog circuit comparator 2, and the output end of the analog circuit comparator 2 is respectively connected with the input ends of the module I3 and the module II 4; the output end of the first module 3 is divided into two paths, wherein one path is connected with the second module 4, and the other path is connected with the third module 5.
The isolation transformer 1 is a three-phase alternating current transformer.
The analog circuit comparator 2 is composed of an analog comparator circuit.
And the first module 3 consists of a NOR gate and a trigger.
And the second module 4 consists of a trigger.
And the module III 5 consists of a gate circuit.
When the three-phase alternating voltage input isolation transformer works, the three-phase alternating voltage of the tested rectifier cabinet is input into the isolation transformer 1 and converted into a pulse signal through the analog circuit comparator 2, the pulse signal is identified through the module I3 to generate fault information, the pulse signal is identified through the module II 4 to generate a corresponding bridge arm signal, the bridge arm where the fault occurs is identified through the gate circuit module III 5, and the fault information is displayed through the indicator lamp. When the rectifier cabinet works normally, the module I3 identifies no fault, and all the indicating lamps are not on; if a certain bridge arm has a fault, the module I3 identifies and generates a fault signal, the module III 5 outputs corresponding bridge arm fault information by combining bridge arm information of the module II 4, and a corresponding bridge arm indicator lamp is lightened. The three-phase rectifier cabinet has six bridge arms, and positive end bridge arm is three: u +, V +, W +, the negative end bridge arm is three: u-, V-, W-.

Claims (3)

1. A method for inspecting a silicon device, comprising: the device comprises an isolation transformer, an analog circuit comparator, a first module, a second module and a third module, wherein the output end of the isolation transformer is connected with the output end of the analog circuit comparator, and the output end of the analog circuit comparator is respectively connected with the input ends of the first module and the second module; the output end of the first module is divided into two paths, wherein one path is connected with the second module, and the other path is connected with the third module; the isolation transformer is composed of a three-phase alternating current transformer; the analog circuit comparator consists of an analog comparator circuit; the first module consists of a NOR gate and a trigger; the three-phase alternating voltage of the rectifier cabinet to be tested is input into an isolation transformer and is converted into a pulse signal through an analog circuit comparator, the pulse signal is identified through a module I to generate fault information, the pulse signal is identified through a module II to generate corresponding bridge arm signals, a gate circuit module III is used for identifying which bridge arm the fault occurs in, and the fault information is displayed through an indicator lamp; when the rectifier cabinet works normally, the first module identifies no fault, and all the indicator lamps are not on; and if a certain bridge arm has a fault, the module I identifies and generates a fault signal, the module III outputs corresponding bridge arm fault information by combining bridge arm information of the module II, and the corresponding bridge arm indicator lamp is lightened.
2. A method for inspection of a silicon component as claimed in claim 1, characterized in that: and the second module consists of a trigger.
3. A method for inspection of a silicon component as claimed in claim 1, characterized in that: and the third module consists of a gate circuit.
CN202111262441.5A 2021-10-28 2021-10-28 Detection method for silicon element Pending CN114019411A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111262441.5A CN114019411A (en) 2021-10-28 2021-10-28 Detection method for silicon element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111262441.5A CN114019411A (en) 2021-10-28 2021-10-28 Detection method for silicon element

Publications (1)

Publication Number Publication Date
CN114019411A true CN114019411A (en) 2022-02-08

Family

ID=80058297

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111262441.5A Pending CN114019411A (en) 2021-10-28 2021-10-28 Detection method for silicon element

Country Status (1)

Country Link
CN (1) CN114019411A (en)

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