CN114006265B - Vertical cavity surface emitting laser and manufacturing method thereof - Google Patents
Vertical cavity surface emitting laser and manufacturing method thereof Download PDFInfo
- Publication number
- CN114006265B CN114006265B CN202111286445.7A CN202111286445A CN114006265B CN 114006265 B CN114006265 B CN 114006265B CN 202111286445 A CN202111286445 A CN 202111286445A CN 114006265 B CN114006265 B CN 114006265B
- Authority
- CN
- China
- Prior art keywords
- layer
- mesa
- cladding layer
- bragg reflector
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000005253 cladding Methods 0.000 claims abstract description 64
- 238000009792 diffusion process Methods 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 170
- 239000000463 material Substances 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 238000003892 spreading Methods 0.000 claims description 11
- 230000007480 spreading Effects 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 9
- 230000003647 oxidation Effects 0.000 abstract description 5
- 238000007254 oxidation reaction Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000699670 Mus sp. Species 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Abstract
The invention discloses a vertical cavity surface emitting laser and a manufacturing method thereof, wherein the laser comprises: the semiconductor device comprises a substrate, an undoped first Bragg reflector, a first contact layer, an undoped lower cladding layer and an undoped first mesa, wherein the first mesa comprises an active layer and an upper cladding layer which are sequentially formed on the lower cladding layer; the second mesa of n-type doping is formed on the first mesa, the second mesa comprises a current expansion layer and a second contact layer which are sequentially formed on the first mesa, and the side surface of the second mesa is subjected to p-type diffusion to form an annular diffusion region; and an undoped second Bragg reflector formed on the second mesa. According to the invention, a p-type diffusion method of a selected region at the side of the micro mesa is utilized to limit current by using a p++ n junction depletion region, so that oxidation and multiple epitaxial processes with high difficulty and low yield are avoided. In addition, by adopting an undoped DBR structure, the difficulty of epitaxial growth is reduced, and meanwhile, the absorption of free carriers can be reduced.
Description
Technical Field
The present invention relates to an optoelectronic device, and more particularly, to a vertical cavity surface emitting laser and a method for fabricating the same.
Background
A Vertical Cavity Surface Emitting Laser (VCSEL) is a semiconductor laser with the advantages of small size and low threshold current, and the surface emitting characteristics of the laser also make it easy for fiber coupling, photonic integration, and on-chip testing. VCSELs have been widely used in the fields of mice, face recognition, data centers, etc., with lasing wavelengths mainly centered at 800-1000nm based on GaAs material systems. In recent years, the fields of laser radar, gas sensing and the like are rising, the requirement for VCSELs with wavelengths above 1300nm is increased, and long-wavelength lasers also contribute to human eye safety. VCSELs with 1300-1600 nm wavelength are mainly prepared by adopting an InP-based material system, and although GaAs-based dilute nitrogen materials are also used, the materials are difficult to grow and the process is immature. InP-based VCSELs limit laser performance and large-scale applications due to low reflectivity of the long-wave DBR and lack of stable oxidation processes. Unlike the lateral oxidation of GaAs-based VCSELs, inP lasers are mainly current limited by burying tunnel junctions, which requires etching tunnel junctions and secondary epitaxy, increasing the difficulty of material growth and device fabrication.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a vertical cavity surface emitting laser and a manufacturing method thereof, which can overcome the problems of immature process and limited large-scale application and manufacturing difficulty in the prior art.
To achieve the above object, an embodiment of the present invention provides a vertical cavity surface emitting laser including:
a substrate;
an undoped first Bragg reflector formed on the substrate;
a first contact layer formed on the surface of the first Bragg reflector;
the undoped lower coating layer is formed on the surface of the first contact layer;
the first undoped table top is formed on the surface of the lower cladding layer and comprises an active layer and an upper cladding layer which are sequentially formed on the lower cladding layer;
the second mesa of n-type doping is formed on the first mesa, the second mesa comprises a current expansion layer and a second contact layer which are sequentially formed on the first mesa, and the side surface of the second mesa is subjected to p-type diffusion to form an annular diffusion region; and
and an undoped second Bragg reflector formed on the second mesa.
In one or more embodiments of the invention, the doping concentration of the lateral p-type diffusion of the second mesa is 2E 18-2E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the diffusion region has a width of 200-2000nm.
In one or more embodiments of the present invention, the maximum outer diameter of the first mesa is smaller than the maximum outer diameter of the lower cladding layer, a first electrode is disposed on the exposed surface of the lower cladding layer, and a p-type diffusion between the first electrode and the first contact layer forms an electrical contact region.
In one or more embodiments of the present invention, the exposed surface of the lower cladding layer is thinned toward the substrate to form a step surface, and the first electrode is disposed on the step surface.
In one or more embodiments of the invention, the electrical contact region p-type diffusion has a doping concentration of 2E182E19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the thickness of the electrical contact region is 200-2000nm.
In one or more embodiments of the invention, the maximum outer diameter of the second mesa is smaller than the maximum outer diameter of the first mesa, and a passivation layer is disposed between the first electrode and the step surface, the passivation layer extending to the surface exposed by the first mesa.
In one or more embodiments of the invention, the maximum outer diameter of the second bragg mirror is smaller than the maximum outer diameter of the second mesa, and a second electrode is disposed on an exposed surface of the second mesa, the second electrode being disposed between the second bragg mirror and the diffusion region.
In one or more embodiments of the invention, the lower cladding layer is InP, ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or the upper cladding layer adopts InP and Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or the current expansion layer adopts InP and Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or the first Bragg reflector material is InP, ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or the second Bragg reflector material is SiO 2 、Si 3 N 4 Or Si; and/or the material of the substrate is InP; and/or the material of the active layer is Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As multiple quantum wells.
In one or more embodiments of the invention, the current spreading layer has a concentration of n-type doping of 5E 17-2E 18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or the concentration of n-type doping of the second contact layer is 1E 18-5E 18cm -3 。
In order to achieve the above object, an embodiment of the present invention further provides a method for manufacturing a vertical cavity surface emitting laser, including:
providing a substrate, and sequentially manufacturing a first Bragg reflector, a first contact layer, a lower cladding layer, an active layer, an upper cladding layer, a current expansion layer, a second contact layer and a second Bragg reflector on the substrate;
etching the second Bragg reflector to the surface of the second contact layer;
etching the second contact layer to the surface of the upper cladding layer or a certain depth of the second contact layer to form a second table top;
etching the upper cladding layer to the surface of the lower cladding layer or a certain depth thereof to form a first table top;
forming an annular diffusion region by p-type diffusion on the side surface of the second mesa;
performing p-type diffusion in selected areas of the exposed surface of the lower cladding layer to form electrical contact regions extending through the thickness of the lower cladding layer;
a first electrode is formed on the electrical contact region and a second electrode is formed on the surface of the exposed second contact layer.
Compared with the prior art, the P-type diffusion method of the micro mesa side selective area utilizes the p++ n junction depletion area to limit the current, and compared with the common oxide layer, ion implantation or buried heterojunction limit, the P-type diffusion method of the micro mesa side selective area has the advantages that the electric limiting area is controlled by mesa size, epitaxial doping concentration and P-type diffusion technology, and oxidation and multiple epitaxial technologies with high difficulty and low yield are avoided. In addition, by adopting an undoped DBR structure, the difficulty of epitaxial growth is reduced, and meanwhile, the absorption of free carriers can be reduced.
Drawings
FIG. 1 is a schematic diagram of a VCSEL structure according to an embodiment of the present invention;
FIG. 2 is an optical reflectance spectrum after irradiating the surface of a sample with incident light having a wavelength of 1300nm in example 1 according to the present invention;
fig. 3 is an optical standing wave and refractive index distribution of a sample in example 1 according to the present invention.
Detailed Description
The following detailed description of embodiments of the invention is, therefore, to be taken in conjunction with the accompanying drawings, and it is to be understood that the scope of the invention is not limited to the specific embodiments.
Throughout the specification and claims, unless explicitly stated otherwise, the term "comprise" or variations thereof such as "comprises" or "comprising", etc. will be understood to include the stated element or component without excluding other elements or components.
As shown in fig. 1, a vertical cavity surface emitting laser according to a preferred embodiment of the present invention includes a substrate 10, and an undoped first bragg mirror 20, a first contact layer 30, an undoped lower cladding layer 40, an undoped first mesa 50, an n-type doped second mesa 60, a second mesa 60, and an undoped second bragg mirror 70 sequentially formed on the substrate. Wherein the first mesa 50 includes an active layer 51 and an upper cladding layer 52 sequentially formed on the lower cladding layer; the second mesa 60 includes a current spreading layer 61 and a second contact layer 62 sequentially formed on the first mesa 50.
The side surface of the second mesa 60 is p-type diffused to form a ring-shaped diffusion region 63, a pn junction is formed between the p-type diffusion region 63 and the n-type second mesa 60, and a depletion region of the pn junction has a current limiting function.
In the scheme, the pn junction depletion region is utilized for current limitation, and compared with the common oxide layer, ion implantation or buried heterojunction limitation, the electrical limitation region is controlled by the size of the second table top 60, the epitaxial doping concentration and the p-type diffusion process, so that the oxidation and multiple epitaxial processes with high difficulty and low yield are avoided. In addition, by adopting an undoped DBR structure, the difficulty of epitaxial growth is reduced, and meanwhile, the absorption of free carriers can be reduced.
In some embodiments, the lateral p-type of the second mesa 60 is diffused into a heavily doped p++ type layer with a doping concentration of 2E 18-2E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The diffusion region 63 has a width of 200-2000nm.
In some embodiments, the maximum outer diameter of the first mesa 50 is less than the maximum outer diameter of the lower cladding layer 40, and the maximum outer diameter of the first mesa 50 is 5-30 μm. The periphery of the first mesa 50 exposes the top surface of the lower cladding layer 40, the exposed surface of the lower cladding layer 40 is provided with a first electrode 80, and a p-type diffusion between the first electrode 80 and the first contact layer 30 forms an electrical contact region 90.
Further, the thickness of the portion of the lower cladding layer 40 exposed around the first mesa 50 is smaller than the thickness of the lower cladding layer 40 located below the first mesa 50, specifically, the surface of the lower cladding layer 40 exposed around the first mesa 50 is thinned towards the direction of the substrate 10 to form a step surface 41, and the first electrode 80 is disposed on the step surface 41.
In some embodiments, the diffusion material diffuses through the lower cladding layer 40 down to a depth of the first contact layer 30 such that the electrical contact region 90 overlaps the first contact layer 30.
In some embodiments, the first electrode 80 is composed of a single layer or multiple layers of metal, and ohmic contact is formed between the metal and the first contact layer 30, and the material of the first electrode 80 is Au/Zn/Au or Ti/Pt/Au.
In some embodiments, the electrical contact region 90 p-type diffusion has a doping concentration of 2E 18-2E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the electrical contact region 90 is 200-2000nm.
In this case, the effect of making an electrode on the electrical contact region 90 formed by diffusion is better than that of making an electrode directly on the first contact layer 30, because diffusion can obtain a higher doping concentration than epitaxial growth.
In some embodiments, the maximum outer diameter of the second mesa 60 is less than the maximum outer diameter of the first mesa 50, the maximum outer diameter of the second mesa 60 is 5-30 μm, and the periphery of the second mesa 60 exposes the top surface of the first mesa 50. A passivation layer 100 is arranged between the first electrode 80 and the step surface 41, said passivation layer 100 extending to the side of the first mesa 50 and to the surface of said first mesa 50 exposed.
In some embodiments, the passivation layer 100 is provided with a window exposing the surface of the step surface 41, and the first electrode 80 is fabricated in the window. The passivation layer 100 is formed of a thin film deposited dielectric layer with an electrically insulating function, and can be made of SiO 2 、Si 3 N 4 Or Al 2 O 3 。
In some embodiments, the maximum outer diameter of the second bragg reflector 70 is smaller than the maximum outer diameter of the second mesa 60, and the periphery of the second bragg reflector 70 exposes the top surface of the second mesa 60. A second electrode 110 is disposed on the exposed surface of the second mesa 60, the second electrode 110 being disposed between the second bragg mirror 70 and the diffusion region 63.
In some embodiments, the second electrode 110 is composed of a single layer or multiple layers of metal, and ohmic contact is formed between the metal and the second contact layer 62, and the material of the second electrode 110 is AuGe, auGe/Ni or AuGe/Ni/Au.
Further, a passivation layer 120 is disposed between the second electrode 110 and the exposed surface of the second mesa 60, a window exposing the surface of the second mesa 60 is formed on the passivation layer 120, and the second electrode 110 is fabricated in the window. The passivation layer 110 is formed of a thin film deposited dielectric layer with an electrically insulating function, and can be made of SiO 2 、Si 3 N 4 Or Al 2 O 3 。
In some embodiments, the material of the substrate 10 is preferably InP; the first Bragg reflector 20 is made of InP and Ga x In 1-x AsyP 1-y Or Ga x Al y In 1-x-y As; the first contact layer 30 is a p+ type contact layer, the second contact layer 62 is an n+ type doped layer, the first contact layer 30 and the second contact layer 62 are made of epitaxially grown compound semiconductor material which is InP and quaternary material Ga lattice-matched with InP x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; the lower cladding layer 40 is InP, gaxIn 1-x As y P 1-y Or Ga x Al y In 1-x-y As; the material of the active layer 51 is Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y A multiple quantum well composed of As; the upper cladding layer 52 is made of InP, gaxIn 1-x As y P 1-y Or Ga x Al y In 1-x-y As; the current spreading layer 61 is made of InP, gaxIn 1-x As y P 1-y Or Ga x Al y In 1-x-y As; the material of the second Bragg reflector 70 is SiO 2 、Si 3 N 4 Or Si.
In some embodiments, current spreading layer 61 has a n-type doping concentration of 5E 17-2E 18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second contact layer 62 has a n-type doping concentration of 1E 18-5E 18cm -3 。
The method for manufacturing the vertical cavity surface emitting laser according to the preferred embodiment of the invention comprises the following steps:
step 1, providing a substrate 10, and sequentially manufacturing a first Bragg reflector 20, a first contact layer 30, a lower cladding layer 40, an active layer 51, an upper cladding layer 52, a current spreading layer 61, a second contact layer 62 and a second Bragg reflector 70 on the substrate 10;
step 2, etching the second bragg reflector 70 to the surface of the second contact layer 62 or a certain depth thereof through a dry process or a wet process, so that the second bragg reflector 70 forms a mesa structure protruding on the second contact layer 62;
step 3, etching the second contact layer 62 to the surface of the upper cladding layer 52 or a certain depth thereof through a dry process or a wet process to form a second mesa 60;
step 4, etching the upper cladding layer 52 to the surface of the lower cladding layer 40 or a certain depth thereof through a dry or wet process to form a first mesa 50;
step 5, forming a ring-shaped diffusion region 63 by p-type diffusion on the side surface of the second mesa 60; p-type diffusion is performed at the exposed surface of the lower cladding layer 40 at the position corresponding to the electrode, and the diffusion material penetrates through the thickness of the lower cladding layer 40 and diffuses to a certain depth of the first contact layer 30, forming an electrical contact region 90;
in step 6, passivation layers 120 and 100 are deposited on the exposed surface of the second contact layer 62 and the exposed surface of the lower cladding layer 40, respectively, windows are opened in the passivation layers, and the second electrode 110 and the first electrode 80 are fabricated in the windows, respectively.
Example 1
A vertical cavity surface emitting laser of an embodiment is provided, comprising a substrate 10, and a first bragg mirror 20, a first contact layer 30, a lower cladding layer 40, an active layer 51, an upper cladding layer 52, a current spreading layer 61, a second contact layer 62, and a second bragg mirror 70 sequentially formed on the substrate 10.
The outer diameter of the second bragg reflector 70 is smaller than the outer diameter of the second contact region 62, a passivation layer 120 is disposed on the exposed surface of the second contact region 62, a window is formed in the passivation layer 120, and a second electrode 110 is disposed in the window.
The outer diameter of the current spreading layer 61 and the second contact region 62 is smaller than the outer diameter of the upper cladding layer 52 and constitutes the second mesa 60. The side surface of the second mesa 60 is p-type diffused with Zn as a dopant, and the Zn diffusion concentration is 4E18cm -3 The diffusion depth was 1. Mu.m.
The maximum outer diameter of the upper cladding layer 52 and the active layer 51 is smaller than the maximum outer diameter of the lower cladding layer 40, and constitutes the first mesa 50. The exposed surface of the lower cladding layer 40 was selectively p-type diffused with Zn as a dopant at a concentration of 4E18cm -3 The diffusion depth is 1 μm, forming the electrical contact region 90.
A passivation layer 100 is disposed above the electrical contact region 90, a window is formed in the passivation layer 100 corresponding to the electrical contact region 90, and a first electrode 80 is disposed in the window.
The substrate 10 is an InP (001) substrate; the first Bragg reflector 20 is 50-period undoped 103nm-InP/94nm-Ga 0.23 In 0.77 As 0.5 P 0.5 The method comprises the steps of carrying out a first treatment on the surface of the The first contact layer 30 adopts a p-type 1E18cm with a thickness of 410nm -3 InP at concentration; the lower cladding layer 40 employs 225nm thick undoped InP; the active layer 51 employs 9-period undoped 6nm-Al 0.175 Ga 0.095 In 0.73 As/9nm-Al 0.27 Ga 0.21 In 0.52 An As multiple quantum well structure; the upper cladding layer 52 is 225nm undoped InP; the current spreading layer 61 adopts 520nm n-type InP with doping concentration of 1E18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second contact layer 62 adopts n-type InP with thickness of 200nm and doping concentration of 5E18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the The second Bragg reflector 70 employs 15 periods of undoped 224nm-SiO 2 /171nm-Si 3 N 4 。
The manufacturing method of the vertical cavity surface emitting laser comprises the following steps:
(1) Growth of 50 cycle undoped 103nm-InP/94nm-Ga on InP (001) substrate 10 using MOCVD 0.23 In 0.77 As 0.5 P 0.5 A first bragg mirror 20;
(2) Growing a p-type 1E18cm with a thickness of 410nm on the first Bragg reflector 20 -3 A concentration of InP first contact layer 30;
(3) Growing an undoped InP lower cladding layer 40 of 225nm thickness on the first contact layer 30;
(4) Growth of 9-cycle undoped 6nm-Al on lower cladding layer 40 0.175 Ga 0.095 In 0.73 As/9nm-Al 0.27 Ga 0.21 In 0.52 An As active layer 51;
(5) An undoped InP upper cladding layer 52 grown on the active layer 51 to a thickness of 225 nm;
(6) An n-type InP current spreading layer 61 with a thickness of 520nm and a doping concentration of 1E18cm is grown on the upper cladding layer 52 -3 ；
(7) An n-type InP second contact layer 62 with a thickness of 200nm is grown on the current spreading layer 61 and a doping concentration of 5E18cm -3 ；
(8) Deposition of 15 cycles of undoped 224nm-SiO on the second contact layer 62 2 /171nm-Si 3 N 4 A second bragg mirror 70;
(9) A second mesa 60 having a diameter of 10 microns is fabricated by an etching process;
(10) Performing p-type diffusion on the side edge of the second mesa 60 after mesa manufacture is completed, and adopting Zn as a doping agent, wherein the diffusion concentration of Zn is 4E18cm -3 Diffusion depth 1 μm; performing selective p-type diffusion on the bottom of the mesa, adopting Zn as a doping agent, and the diffusion concentration of Zn is 4E18cm -3 The diffusion depth was 1. Mu.m.
(11) And manufacturing a p electrode and an n electrode on the top and the bottom of the table top by adopting Au/Zn/Au and AuGe/Ni/Au multilayer metals respectively.
The optical reflectance spectrum shown in FIG. 2 is obtained after the surface of the sample is irradiated with incident light having a wavelength of 1300nm, and FIG. 3 shows the standing wave and refractive index distribution of the sample according to example 1 of the present invention. As can be seen from fig. 2, there is a laser cavity mode absorption valley at 1300nm and the reflectance values around 1300nm are greater than 99%. After the epitaxial growth and the film deposition are completed, the epitaxial growth area inside the bottom and the top has stable light field distribution, wherein the quantum well area is positioned at the crest of the light field standing wave.
In the embodiment, the material composition, layer thickness and doping of each layer are controlled, the lateral p-type diffusion of the micro mesa is utilized for current limitation, and the injected current generates multimode or single-mode laser in the device and is emitted from one side of the substrate.
The foregoing descriptions of specific exemplary embodiments of the present invention are presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application to thereby enable one skilled in the art to make and utilize the invention in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (7)
1. A vertical cavity surface emitting laser, comprising:
a substrate;
an undoped first Bragg reflector formed on the substrate;
a first contact layer formed on the surface of the first Bragg reflector;
the undoped lower coating layer is formed on the surface of the first contact layer;
the first undoped table top comprises an active layer and an upper cladding layer which are sequentially formed on the lower cladding layer, the maximum outer diameter of the first table top is smaller than that of the lower cladding layer, a first electrode is arranged on the exposed surface of the lower cladding layer, and an electric contact area is formed by p-type diffusion between the first electrode and the first contact layer;
the second mesa of n-type doping, form on said first mesa, the said second mesa includes forming in turn on the first mesa current expansion layer and second contact layer, the side p-type diffusion of the said second mesa forms the annular diffusion zone, the said diffusion zone forms between top surface and top surface of the upper cladding layer of the said second contact layer in the thickness direction of the laser, the surface exposed of the said lower cladding layer thins and forms the step surface to the direction of substrate, the said first electrode is set up on said step surface, the maximum external diameter of the said second mesa is smaller than the maximum external diameter of the said first mesa, there is passivation layer between step surface and the said first electrode, the said passivation layer extends to the surface exposed of the said first mesa;
a kind of electronic device with a high-performance liquid crystal display
And an undoped second Bragg reflector formed on the second mesa.
2. The vertical cavity surface emitting laser according to claim 1, wherein a doping concentration of a lateral p-type diffusion of said second mesa is 2E 18-2E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or
The width of the diffusion region is 200-2000nm.
3. The vertical cavity surface emitting laser according to claim 1, wherein said electrical contact region p-type diffusion has a doping concentration of 2E 18-2E 19cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or
The thickness of the electrical contact region is 200-2000nm.
4. A VCSEL as defined in claim 1 wherein the maximum outer diameter of the second Bragg reflector is smaller than the maximum outer diameter of the second mesa,
and a second electrode is arranged on the exposed surface of the second mesa, and the second electrode is arranged between the second Bragg reflector and the diffusion region.
5. The vertical cavity surface emitting laser according to claim 1, wherein said lower cladding layer is made of InP, ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or
The upper claddingThe layer adopts InP and Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or
The current expansion layer adopts InP and Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As; and/or
The first Bragg reflector material is InP or Ga x In 1-x AsyP 1-y Or Ga x Al y In 1-x-y As; and/or
The second Bragg reflector material is SiO 2 、Si 3 N 4 Or Si; and/or
The substrate is made of InP; and/or
The material of the active layer is Ga x In 1-x As y P 1-y Or Ga x Al y In 1-x-y As multiple quantum wells.
6. The vertical cavity surface emitting laser according to claim 1, wherein said current spreading layer has a concentration of n-type doping of 5E 17-2E 18cm -3 The method comprises the steps of carrying out a first treatment on the surface of the And/or
The n-type doping concentration of the second contact layer is 1E 18-5E 18cm -3 。
7. A method of fabricating a vertical cavity surface emitting laser according to any one of claims 1 to 6, comprising:
providing a substrate, and sequentially manufacturing a first Bragg reflector, a first contact layer, a lower cladding layer, an active layer, an upper cladding layer, a current expansion layer, a second contact layer and a second Bragg reflector on the substrate;
etching the second Bragg reflector to the surface of the second contact layer or a certain depth thereof;
etching the second contact layer to the surface of the upper cladding layer or a certain depth of the second contact layer to form a second table top;
etching the upper cladding layer to the surface of the lower cladding layer or a certain depth thereof to form a first table top;
forming an annular diffusion region by p-type diffusion on the side surface of the second mesa;
performing p-type diffusion in selected areas of the exposed surface of the lower cladding layer to form electrical contact regions extending through the thickness of the lower cladding layer;
a first electrode is formed on the electrical contact region and a second electrode is formed on the surface of the exposed second contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111286445.7A CN114006265B (en) | 2021-11-02 | 2021-11-02 | Vertical cavity surface emitting laser and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111286445.7A CN114006265B (en) | 2021-11-02 | 2021-11-02 | Vertical cavity surface emitting laser and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114006265A CN114006265A (en) | 2022-02-01 |
| CN114006265B true CN114006265B (en) | 2024-02-13 |
Family
ID=79926297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111286445.7A Active CN114006265B (en) | 2021-11-02 | 2021-11-02 | Vertical cavity surface emitting laser and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114006265B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165418A (en) * | 1996-02-26 | 1997-11-19 | 摩托罗拉公司 | Low resistance P-down top emitting ridge vcsel and method of fabrication |
| CN101421890A (en) * | 2006-04-13 | 2009-04-29 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic semiconductor element |
| CN103811996A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Semiconductor light emitting device |
| CN108369974A (en) * | 2015-12-22 | 2018-08-03 | 苹果公司 | LED sidewall treatments for mitigating non-radiative recombination |
-
2021
- 2021-11-02 CN CN202111286445.7A patent/CN114006265B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1165418A (en) * | 1996-02-26 | 1997-11-19 | 摩托罗拉公司 | Low resistance P-down top emitting ridge vcsel and method of fabrication |
| CN101421890A (en) * | 2006-04-13 | 2009-04-29 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic semiconductor element |
| CN103811996A (en) * | 2012-11-07 | 2014-05-21 | 无锡华御信息技术有限公司 | Semiconductor light emitting device |
| CN108369974A (en) * | 2015-12-22 | 2018-08-03 | 苹果公司 | LED sidewall treatments for mitigating non-radiative recombination |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114006265A (en) | 2022-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5835521A (en) | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication | |
| US4935936A (en) | Semiconductor structure with flared mesa burying layers | |
| JPS61127192A (en) | Surface radiation light emitter | |
| JPS63318195A (en) | Transverse buried type surface emitting laser | |
| JP2001237497A (en) | Passive semiconductor structure and manufacturing method therefor | |
| JPH06224521A (en) | Integrated short-cavity laser | |
| US6621843B2 (en) | Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same | |
| US20130230068A1 (en) | Edge-Emitting Semiconductor Laser Diode and Method for Producing the Same | |
| CN109716601A (en) | The vertical cavity surface emitting laser of etched planarization | |
| JP2014509084A (en) | Multistage quantum cascade laser with p-type isolation region | |
| KR100397371B1 (en) | Long wavelength vertical-cavity surface emitting laser having oxide-aperture and method for fabricating the same | |
| JPH04225588A (en) | Semiconductor laser structure | |
| CN113708214B (en) | Dual-wavelength VCSEL structure based on selective epitaxial technology and preparation method thereof | |
| CN114336287B (en) | Evanescent wave coupling silicon-based laser based on coplanar electrode configuration and preparation method thereof | |
| US11329453B2 (en) | Surface emitting laser | |
| CN114006265B (en) | Vertical cavity surface emitting laser and manufacturing method thereof | |
| JPH11145567A (en) | Semiconductor laser array | |
| US20050201436A1 (en) | Method for processing oxide-confined VCSEL semiconductor devices | |
| US7169629B2 (en) | VCSEL and the fabrication method of the same | |
| US4517674A (en) | Zinc-diffused narrow stripe AlGaAs/GaAs double heterostructure laser | |
| US20210006039A1 (en) | Electrically pumped photonic-crystal surface-emitting lasers with optical detector | |
| US4521887A (en) | W-shaped diffused stripe GaAs/AlGaAs laser | |
| CN114006264B (en) | Structure of long wavelength VCSEL and preparation method thereof | |
| WO2018208274A2 (en) | Aligned electrical and optical confinement | |
| CN117747697A (en) | VCSEL and PD integrated chip, manufacturing method and optoelectronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |