CN114000105A - Preparation method and application of Ta-C diamond-like coating - Google Patents
Preparation method and application of Ta-C diamond-like coating Download PDFInfo
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- CN114000105A CN114000105A CN202111200470.9A CN202111200470A CN114000105A CN 114000105 A CN114000105 A CN 114000105A CN 202111200470 A CN202111200470 A CN 202111200470A CN 114000105 A CN114000105 A CN 114000105A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B51/00—Tools for drilling machines
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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Abstract
The application relates to the field of PCB drilling, and particularly discloses a preparation method and application of a Ta-C diamond-like coating. A preparation method of a Ta-C diamond-like coating comprises the following steps of S1, cleaning a base material; s2, putting a base material into a vacuum environment by adopting a magnetic filtration vacuum cathode arc technology, then introducing argon, opening a bias voltage, wherein the bias voltage of the base material is 550-650V, and carrying out ion bombardment for 1600-1900 s; s3, turning off argon, vacuumizing, introducing argon again, then taking a carbon target as a target material, biasing the substrate to 300-500V, setting the carbon target current to be 60-70A, and depositing for 200-350 s; s4, reducing the bias voltage of the base material to 30-60V in a gradient manner, and then continuously depositing for 1800-2100 s; and S5, cooling to obtain the diamond-like coating. The preparation method has the advantages of prolonging the service life of the micro-diameter cutter and reducing the production cost.
Description
Technical Field
The application relates to the field of PCB drilling, in particular to a preparation method of a Ta-C diamond-like coating and application of the Ta-C diamond-like coating to PCB micro-diameter cutters.
Background
The PCB is a support of electronic components for short, and is also an indispensable basic component of all electronic information products, and with the miniaturization and high speed of products such as mobile phones, notebook computers and the like, the miniaturization manufacture of the PCB is more and more emphasized, and especially in the 5G era today, 5G products have many new requirements on signal integrity, sheet machinability and reliability so as to meet the design performance requirements of communication base stations, antennas and wireless communication equipment.
In the manufacture of printed circuit boards, a critical step is the drilling of vias, i.e., electrical connection paths between layers and attachment or alignment holes for devices. Due to the particularity required by 5G products, the wiring density of the PCB is higher and higher, the aperture of the through hole is smaller and smaller, and the size of a cutter for drilling the through hole, such as a micro-diameter drill and a micro-diameter gong cutter, is smaller, the size of the micro-diameter drill special for the PCB is ¢ 0.1.1-0.25 mm, and the size of the micro-diameter gong cutter is ¢ 0.8.8-2.0 mm.
Because the size of minor diameter drill bit and minor diameter gong sword is little for its life is shorter, will need to be changed because of wearing and tearing are excessive about 600 driling, and enterprise production PCB board need bore a large amount of through-holes, frequently changes the minor diameter cutter and can drag the production progress slowly, increases manufacturing cost moreover.
Disclosure of Invention
In order to prolong the service life of the micro-diameter cutter and reduce the production cost, the application provides a preparation method of a Ta-C diamond-like coating and application thereof.
In a first aspect, the present application provides a method for preparing a diamond-like coating, which adopts the following technical scheme:
a preparation method of a Ta-C diamond-like coating comprises the following steps:
s1, cleaning a base material;
s2, putting the substrate into a vacuum environment by adopting a magnetic filtration vacuum cathode arc technology, then introducing argon, opening a bias voltage at the pressure of 0.0001-0.0003 mbar in the vacuum chamber, wherein the bias voltage of the substrate is 550-650V, and carrying out ion bombardment for 1600-1900 s;
s3, turning off argon, vacuumizing, introducing argon again, then taking a carbon target as a target material, biasing the substrate to 300-500V, setting the carbon target current to be 60-70A, and depositing for 200-350 s;
s4, reducing the bias voltage of the base material to 30-60V in a gradient manner, and then continuously depositing for 1800-2100 s;
and S5, cooling to obtain the diamond-like coating.
By adopting the technical scheme, the Ta-C diamond-like coating is covered on the base material, the Ta-C diamond-like coating is mainly bonded by sp3, and the sp3 bond content is higher than 70%, so that the structural stability of the coating is high.
The substrate is etched through the step S2, the contact area of the Ta-C diamond-like coating and the substrate is increased, the bonding force of the coating and the substrate is improved, the substrate bias voltage is reduced in a gradient mode in the step S4, the proportion of sp3 bonds in the Ta-C diamond-like coating is improved, the hardness of the coating is higher, the wear resistance is better, the wear resistance of the substrate is improved, the size of the substrate can be made smaller, the service life of the substrate can be prolonged, and the method is suitable for micro-diameter tools which need to drill holes on a PCB for many times.
Preferably, in the step S2, the flow rate of argon gas is 100-150 sccm.
By adopting the technical scheme, the argon gas introducing flow is beneficial to controlling the etching degree of the base material, so that the bonding force between the Ta-C diamond-like coating and the base material is improved.
Preferably, in the step S3, the flow rate of argon gas is 5 to 10 sccm.
By adopting the technical scheme, the argon gas is introduced with flow rate, so that the Ta-C diamond-like carbon coating is deposited more uniformly, and the hardness and the wear resistance of the Ta-C diamond-like carbon coating are improved.
Preferably, the step S3 is specifically to close argon, vacuumize to vacuum degree of 0.0001-0.0003 mbar, then introduce argon, the flow of argon is 5-10 sccm, adjust the substrate bias voltage of 350-400V, and deposit for 250-350S when the vacuum degree reaches 0.042-0.050 mbar, and carbon target is used as the target material and the carbon target current is 60-70A.
By adopting the technical scheme, the proper argon atmosphere is adjusted, and then carbon deposition is carried out, so that the binding force between the diamond-like coating and the base material is higher, and the hardness and the wear resistance of the coating are further improved.
Preferably, the step S4 specifically includes: adjusting the bias voltage to 180-250V on the substrate in the step S3, depositing for 200-350S, then adjusting the bias voltage of the substrate to 70-150V, depositing for 600-900S, then adjusting the bias voltage of the substrate to 40-60V, and then continuing to deposit for 1800-2100S.
By adopting the technical scheme, the gradient reduction of the bias voltage of the base material is realized, and the forming speed of the diamond-like coating is controlled in a proper range, so that the structural stability of the diamond-like coating is improved.
Preferably, the step S4 specifically includes: adjusting the bias voltage to 200-205V on the substrate in the step S3, depositing for 250-260S, adjusting the bias voltage to 95-105V, depositing for 770-780S, adjusting the bias voltage to 40-45V, and continuing to deposit for 1900-1950S.
By adopting the technical scheme, the forming speed of the diamond-like coating is further controlled, the proportion of sp3 bonds is further improved, the formation of nano graphite crystals is restrained, and the sp3 bonds are more difficult to convert to sp2 bonds, so that the diamond-like coating can still be stable at high temperature, namely the heat resistance is better.
In a second aspect, the application provides a Ta-C diamond-like coating, which adopts the following technical scheme:
a Ta-C diamond-like coating has a thickness of 0.1-0.3 μm.
By adopting the technical scheme, the coating is small in thickness, so that the base material can be provided with high hardness and wear resistance without increasing excessive thickness of the base material.
In a third aspect, the application provides an application of a Ta-C diamond-like coating on a PCB micro-diameter cutter, which adopts the following technical scheme:
the Ta-C diamond-like coating is applied to a PCB micro-diameter cutter, the surface of the PCB micro-diameter cutter is covered with the Ta-C diamond-like coating, the PCB micro-diameter cutter is a micro-diameter drill bit or a micro-diameter gong cutter, and the PCB micro-diameter cutter is used for drilling a PCB.
By adopting the technical scheme, the Ta-C diamond-like coating is coated on the PCB micro-diameter cutter, so that the surface hardness of the PCB micro-diameter cutter can be improved, the surface friction coefficient can be reduced, and the Ta-C diamond-like coating is suitable for small-size base materials such as the PCB micro-diameter cutter, so that the service life of the PCB micro-diameter cutter is prolonged, and the cost is reduced.
In summary, the present application has the following beneficial effects:
1. as the Ta-C diamond-like coating is covered on the base material, the Ta-C diamond-like coating is mainly bonded by sp3, and the sp3 bond content is higher than 70%, so that the structural stability of the coating is high; etching the base material through the step of S2, increasing the contact area of the Ta-C diamond-like coating and the base material, and improving the bonding force of the coating and the base material; the substrate bias voltage is reduced in a gradient manner in the step S4, the proportion of sp3 bonds in the Ta-C diamond-like coating is improved, the hardness of the coating is higher, the wear-resisting performance is better, the wear-resisting capacity of the substrate is improved, the size of the substrate can be smaller, the service life of the substrate can be prolonged, and the method is suitable for micro-diameter tools needing to drill a PCB for many times.
2. The method for controlling the forming speed of the diamond-like coating is adopted, so that the diamond-like coating can still keep stable at high temperature, namely the heat resistance is better.
Drawings
Fig. 1 is a PCB micro-diameter tool with a diamond-like carbon coating covered on the surface provided by the present application.
Description of the labeling: 1. a substrate; 2. Ta-C diamond-like coating.
Detailed Description
The present application will be described in further detail with reference to examples.
The cleaning solution is prepared from wax removing water and oil removing agent according to the volume ratio of 1:2, wherein the wax removing water and the oil removing agent are both purchased from Guangdong Hongyixing industry Co Ltd, the model of the wax removing water is RS-86b, and the model of the oil removing agent is ITN-709.
Examples
Example 1
An application of a Ta-C diamond-like coating on a PCB (printed Circuit Board) micro-diameter cutter comprises a substrate 1 and a diamond-like coating 2 coated on the surface of the substrate 1, wherein the substrate 1 is a PCB micro-diameter drill bit in the PCB micro-diameter cutter, and the blade diameter of the PCB micro-diameter drill bit is 0.2 mm.
A preparation method of a Ta-C diamond-like coating comprises the following steps:
s1, putting the base material into a cleaning solution, and carrying out ultrasonic treatment for 8min at an ultrasonic frequency of 28 kHz.
S2, adopting right-angle elbow-shaped magnetic filtering direct-current vacuum cathode arc deposition equipment, putting the base material into a vacuum chamber, introducing argon gas when the vacuum degree reaches 0.0001mbar, wherein the flow rate of the argon gas is 100sccm, performing ion bombardment, and biasing the base material at 550V for 1600 s;
s3, turning off argon, vacuumizing, introducing argon when the vacuum degree reaches 0.0001mbar, introducing argon with the flow rate of 5sccm, introducing argon while using a carbon target as a target material, biasing the substrate at 300V, and depositing for 200s, wherein the carbon target is at a current of 60A;
s4, adjusting the bias voltage to 180V on the substrate in the step S3, depositing for 200S, then adjusting the bias voltage of the substrate to 70V, depositing for 600S, then adjusting the bias voltage of the substrate to 30V, and then continuing to deposit for 1800S;
s5, cooling, introducing air after the temperature of the vacuum chamber is reduced to be below 100 ℃, taking out the base material, and obtaining a Ta-C diamond-like coating on the base material, wherein the thickness of the Ta-C diamond-like coating is 0.1 mu m.
Example 2
An application of a Ta-C diamond-like coating on a PCB (printed Circuit Board) micro-diameter cutter comprises a substrate 1 and a diamond-like coating 2 coated on the surface of the substrate 1, wherein the substrate 1 is a PCB micro-diameter drill bit in the PCB micro-diameter cutter, and the blade diameter of the PCB micro-diameter drill bit is 0.2 mm.
A preparation method of a Ta-C diamond-like coating comprises the following steps:
s1, putting the base material into a cleaning solution, and carrying out ultrasonic treatment for 8min at an ultrasonic frequency of 28 kHz.
S2, adopting right-angled elbow-shaped magnetic filtering direct-current vacuum cathode arc deposition equipment, putting the base material into a vacuum chamber, introducing argon gas when the vacuum degree reaches 0.0003mbar, wherein the flow rate of the argon gas is 150sccm, performing ion bombardment, and biasing the base material at 650V for 2100 s;
s3, turning off argon, vacuumizing, introducing argon when the vacuum degree reaches 0.0001mbar, introducing the argon with the flow rate of 10sccm, introducing the argon while using a carbon target as a target material, biasing the substrate at 500V, and depositing for 350s under the carbon target current of 70A;
s4, adjusting the bias voltage to 250V on the substrate in the step S3, depositing for 350S, then adjusting the bias voltage of the substrate to 150V, depositing for 900S, then adjusting the bias voltage of the substrate to 60V, and then continuing to deposit for 2100S;
s5, cooling, introducing air after the temperature of the vacuum chamber is reduced to be below 100 ℃, taking out the base material, and obtaining a Ta-C diamond-like coating on the base material, wherein the thickness of the Ta-C diamond-like coating is 0.29 mu m.
Example 3
An application of a Ta-C diamond-like coating on a PCB (printed Circuit Board) micro-diameter cutter comprises a substrate 1 and a diamond-like coating 2 coated on the surface of the substrate 1, wherein the substrate 1 is a PCB micro-diameter drill bit in the PCB micro-diameter cutter, and the blade diameter of the PCB micro-diameter drill bit is 0.2 mm.
A preparation method of a Ta-C diamond-like coating comprises the following steps:
s1, putting the base material into a cleaning solution, and carrying out ultrasonic treatment for 8min at an ultrasonic frequency of 28 kHz.
S2, adopting right-angled elbow-shaped magnetic filtering direct-current vacuum cathode arc deposition equipment, putting the base material into a vacuum chamber, introducing argon gas when the vacuum degree reaches 0.0001mbar, wherein the flow rate of the argon gas is 120sccm, performing ion bombardment, and biasing the base material at 600V for 1700 s;
s3, turning off argon, vacuumizing, introducing argon when the vacuum degree reaches 0.0001mbar, introducing the argon with the flow rate of 10sccm, introducing the argon while using a carbon target as a target material, biasing the substrate at 400V, and depositing for 250s, wherein the carbon target is at a current of 65A;
s4, adjusting the bias voltage to 250V on the substrate in the step S3, depositing for 350S, then adjusting the bias voltage of the substrate to 150V, depositing for 900S, then adjusting the bias voltage of the substrate to 60V, and then continuing to deposit for 2100S;
s5, cooling, introducing air after the temperature of the vacuum chamber is reduced to be below 100 ℃, taking out the base material, and obtaining a Ta-C diamond-like coating on the base material, wherein the thickness of the Ta-C diamond-like coating is 0.22 mu m.
Example 4
This example differs from example 3 only in that in this example the Ta-C diamond like coating has a thickness of 0.23 μm. The step of S3 is specifically: and closing argon, vacuumizing until the vacuum degree reaches 0.0001mbar, then introducing argon, introducing the argon at the flow rate of 5sccm, then adjusting the bias voltage of the substrate to 350V, and depositing for 250s by taking a carbon target as a target material and taking the carbon target as a current 65A when the vacuum degree reaches 0.042 mbar.
Example 5
This example differs from example 3 only in that the Ta-C diamond-like coating has a thickness of 0.22 μm. The step of S3 is specifically: and closing argon, vacuumizing until the vacuum degree reaches 0.0003mbar, then introducing argon, wherein the introduction flow of argon is 10sccm, then adjusting the substrate bias voltage to 400V, and depositing for 350s by using a carbon target as a target material and using a carbon target current of 65A when the vacuum degree reaches 0.050 mbar.
Example 6
This example differs from example 5 only in that the diamond-like coating has a thickness of 0.20 μm. The step of S4 is specifically: the bias voltage is adjusted to 200V on the substrate at step S3, deposition is performed for 250S, then the substrate bias voltage is adjusted to 95V, deposition is performed for 770S, then the substrate bias voltage is adjusted to 40V, and then deposition is continued for 1950S.
Example 7
This example differs from example 5 only in that the diamond-like coating has a thickness of 0.20 μm. The step of S4 is specifically: the bias voltage was adjusted to 205V on the substrate at step S3, deposition was carried out for 260S, then the substrate bias voltage was adjusted to 105V, deposition was carried out for 780S, then the substrate bias voltage was adjusted to 45V, and deposition was continued for 1900S.
Comparative example
Comparative example 1
The present comparative example only differs from example 3 in that, in the present comparative example, the step S2 is specifically:
s2, adopting right-angle elbow-shaped magnetic filtering direct-current vacuum cathode arc deposition equipment, putting the base material into a vacuum chamber, introducing argon gas when the vacuum degree reaches 0.0001mbar, wherein the flow rate of the argon gas is 120sccm, then performing ion bombardment, and biasing the base material at 400V for 1700 s.
The step of S3 is specifically:
and S3, turning off argon, vacuumizing, introducing argon when the vacuum degree reaches 0.0001mbar, introducing the argon with the flow rate of 10sccm, introducing the argon while using a carbon target as a target material, biasing the substrate at 600V, and depositing for 250s under the carbon target current of 65A.
Comparative example 2
The present comparative example only differs from example 3 in that, in the present comparative example, the step S4 is specifically:
the bias was directly adjusted to 60V on the substrate at step S3, and then deposition was continued for 2100S.
Performance test
The coefficient of friction of the coating was tested according to YB/T4286-.
The hardness of the coating was measured according to GB/T4342-1991 "method of micro Vickers hardness test for metals", and the results are shown in Table 1.
Under the protection of argon, putting the tungsten alloy with the diamond-like coating for the drill bit into a tube furnace, heating to 800 ℃, preserving heat for 30min, cooling and taking out, testing the coating hardness after high temperature according to GB/T4342-1991 'Metal micro Vickers hardness test method', and calculating the attenuation rate of the coating hardness after high temperature treatment, wherein the calculation formula is the coating hardness attenuation rate = (coating hardness without high temperature treatment-coating hardness without high temperature treatment)/coating hardness without high temperature treatment, the smaller the attenuation rate of the coating hardness represents the better heat resistance of the coating, and the test results are shown in Table 1.
Taking the PCB micro-diameter drill covered with the Ta-C diamond-like coating prepared by the method, taking the PCB micro-diameter drill not covered with the diamond-like coating as a blank group, drilling the PCB with the thickness of 1.0mm, recording the total drilling number of the PCB micro-diameter drill before abrasion, and testing results are shown in Table 2.
TABLE 1
| Coefficient of friction | Coating hardness/HV | Coating hardness/HV after high temperature | Coating hardness decay Rate/% | |
| Example 1 | 0.24 | 4551 | 4014 | 11.81 |
| Example 2 | 0.22 | 4566 | 4035 | 11.64 |
| Example 3 | 0.20 | 4559 | 4023 | 11.76 |
| Example 4 | 0.17 | 4681 | 4154 | 11.26 |
| Example 5 | 0.16 | 4676 | 4139 | 11.48 |
| Example 6 | 0.13 | 4768 | 4477 | 6.10 |
| Example 7 | 0.13 | 4789 | 4496 | 6.12 |
| Comparative example 1 | 0.48 | 3880 | 3394 | 12.52 |
| Comparative example 2 | 0.46 | 3727 | 3271 | 12.24 |
TABLE 2
| Number of drilled holes/ | |
| Example 1 | 4570 |
| Example 2 | 4536 |
| Example 3 | 4684 |
| Example 4 | 5492 |
| Example 5 | 5562 |
| Example 6 | 6086 |
| Example 7 | 6012 |
| Blank group | 623 |
| Comparative example 1 | 2735 |
| Comparative example 2 | 2588 |
As can be seen from tables 1 and 2, by combining example 3 with the blank group, the Ta-C diamond-like coating is used to cover the micro-diameter drill, so that the drilling number of the micro-diameter drill can be increased, namely the service life of the micro-diameter drill is prolonged, and the wear resistance of the surface of the micro-diameter drill is higher after the Ta-C diamond-like coating is covered.
By combining the embodiment 3 and the comparative examples 1-2, the wear resistance, hardness and the number of drilled holes of the diamond-like coating are improved, which shows that the process of controlling the etching of the surface of the base material, the process of controlling the initial covering of the diamond-like coating and the surface of the base material and the method of implementing the gradient reduction of the bias voltage of the base material can promote the improvement of the bonding force between the diamond-like coating and the surface of the base material and improve the structural stability of the diamond-like coating, thereby improving the wear resistance and hardness.
Combining examples 4-5 with example 3, the wear resistance, hardness and the number of drilled holes are all improved, which shows that when the diamond-like coating is deposited, the bonding force between the diamond-like coating and the substrate can be higher by adjusting the proper argon atmosphere, so that the coating with good hardness and wear resistance can be obtained.
Combining examples 6-7 with example 5, the wear resistance, hardness, number of drilled holes and heat resistance of the coating are all improved, which shows that when depositing the diamond-like coating, the process of further controlling the gradient reduction of the substrate bias can make the structure formed by the diamond-like coating more stable, thereby obtaining the coating with good wear resistance, hardness and heat resistance.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (8)
1. A preparation method of a Ta-C diamond-like coating is characterized by comprising the following steps:
s1, cleaning a base material;
s2, putting the substrate into a vacuum environment by adopting a magnetic filtration vacuum cathode arc technology, then introducing argon, opening a bias voltage at the pressure of 0.0001-0.0003 mbar in the vacuum chamber, wherein the bias voltage of the substrate is 550-650V, and carrying out ion bombardment for 1600-1900 s;
s3, turning off argon, vacuumizing, introducing argon again, then taking a carbon target as a target material, biasing the substrate to 300-500V, setting the carbon target current to be 60-70A, and depositing for 200-350 s;
s4, reducing the bias voltage of the base material to 30-60V in a gradient manner, and then continuously depositing for 1800-2100 s;
and S5, cooling to obtain the diamond-like coating.
2. A method of making a Ta-C diamond-like coating according to claim 1, characterized in that: in step S2, the flow rate of argon gas is 100-150 sccm.
3. A method of making a Ta-C diamond-like coating according to claim 1, characterized in that: in step S3, the flow rate of argon gas is 5-10 sccm.
4. A method of making a Ta-C diamond-like coating according to claim 3, characterized in that: and S3, specifically, closing argon, vacuumizing until the vacuum degree reaches 0.0001-0.0003 mbar, then introducing the argon, introducing the argon at a flow rate of 5-10 sccm, adjusting the substrate to a bias voltage of 350-400V, and depositing for 250-350S when the vacuum degree reaches 0.042-0.050 mbar and the carbon target is used as the target material and the carbon target current is 60-70A.
5. A method of making a Ta-C diamond-like coating according to claim 1, characterized in that: the step of S4 is specifically: adjusting the bias voltage to 180-250V on the substrate in the step S3, depositing for 200-350S, then adjusting the bias voltage of the substrate to 70-150V, depositing for 600-900S, then adjusting the bias voltage of the substrate to 40-60V, and then continuing to deposit for 1800-2100S.
6. A method of making a Ta-C diamond-like coating according to claim 5, characterized in that: the step of S4 is specifically: adjusting the bias voltage to 200-205V on the substrate in the step S3, depositing for 250-260S, adjusting the bias voltage to 95-105V, depositing for 770-780S, adjusting the bias voltage to 40-45V, and continuing to deposit for 1900-1950S.
7. A Ta-C diamond-like coating, characterized in that it is prepared on the basis of the preparation method of any one of claims 1 to 6, and the thickness of the diamond-like coating is 0.1 to 0.3 μm.
8. The application of the Ta-C diamond-like coating on a PCB micro-diameter cutter is characterized in that the Ta-C diamond-like coating prepared by the preparation method of any one of claims 1 to 6 covers the surface of the PCB micro-diameter cutter, the PCB micro-diameter cutter is a micro-diameter drill bit or a micro-diameter gong cutter, and the PCB micro-diameter cutter is used for drilling a PCB.
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