CN113990985A - Preparation method of ingot single crystal and MWT battery structure - Google Patents
Preparation method of ingot single crystal and MWT battery structure Download PDFInfo
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- CN113990985A CN113990985A CN202111287384.6A CN202111287384A CN113990985A CN 113990985 A CN113990985 A CN 113990985A CN 202111287384 A CN202111287384 A CN 202111287384A CN 113990985 A CN113990985 A CN 113990985A
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- 239000013078 crystal Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 238000005266 casting Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 25
- 238000009792 diffusion process Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 7
- 238000007639 printing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005553 drilling Methods 0.000 claims description 3
- 239000003344 environmental pollutant Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 231100000719 pollutant Toxicity 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 17
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a structure of an ingot single crystal and an MWT battery, which prepares a high-efficiency battery by adopting the technologies of black silicon etching, SiON film deposition, MWT and PERC, and initiates a new technical route of ingot single crystal batteries. The battery structure prepared by the invention has the advantage of low cost of ingot casting monocrystalline silicon wafers, can be compatible with silicon wafers with the thickness of less than 150 microns, can improve the battery efficiency while solving the appearance problem, and can improve the current and the battery efficiency and the comprehensive generating capacity of the assembly.
Description
Technical Field
The invention relates to the technical field of solar cell production, in particular to a preparation method of an ingot single crystal and MWT cell structure.
Background
The traditional crystal silicon mainly comprises a czochralski single crystal and an ingot casting polycrystal, wherein a czochralski single crystal silicon ingot has less dislocation, low impurity concentration and longer minority carrier lifetime, but the problem of low raw material utilization rate and low productivity exist in the square cutting process; the yield of the ingot polycrystal is larger, but the dislocation and impurity concentration are higher, and the minority carrier lifetime is lower. The ingot single crystal combines the advantages of low dislocation impurity concentration of the Czochralski single crystal and high material utilization rate of the cast polycrystal, has great significance for reducing the power cost of photovoltaic power generation, and has wide market prospect.
At present, the market has already comprehensively upgraded the PERC technology, and the polycrystalline silicon wafer exits from a stage; the existing Czochralski single crystal silicon wafer of 5 yuan/wafer still has short supply, compared with the ingot casting single crystal, the cost can be reduced by 20 percent, the problem of shortage of raw materials can be solved, the cost of the silicon wafer is saved, the requirement on silicon materials is low, and the silicon wafer with large size can be produced. However, the main reasons why the ingot casting monocrystalline silicon piece cannot be widely popularized are that the ingot casting monocrystalline silicon piece has crystal flowers, color difference caused by the problem of crystal boundaries and the problem of component appearance, so that the component can only be applied to power stations without requirements on appearance in remote areas.
The MWT battery has the advantages of high conversion efficiency, low temperature coefficient, low attenuation, good low-light property and the like, but the cost is higher at present and the cost performance is relatively poorer.
Disclosure of Invention
The invention provides a preparation method of an ingot single crystal and MWT battery structure, aiming at solving the problems in the prior art, the prepared battery structure has the advantage of low cost of ingot single crystal silicon wafers, silicon wafers with the thickness of less than 150 microns can be compatible, the battery efficiency can be improved while the appearance problem is solved, the current and the battery efficiency are improved, and the comprehensive generating capacity of a component is improved.
The invention provides an ingot single crystal and MWT battery structure, which sequentially comprises a front antireflection film, an SiON laminated film, a front diffusion layer, a front black silicon small suede, a single crystal silicon substrate and a back electric field from top to bottom, wherein a front electrode and a back electrode are respectively arranged on two sides of the single crystal silicon substrate, the front electrode is embedded into the front antireflection film, the SiON laminated film and the front diffusion layer, and the back electrode is embedded into the back electric field; a through hole is formed in the center of the monocrystalline silicon substrate, one end of the through hole is sealed through the front electrode, and hole plugging slurry is filled in the through hole.
In a further improvement, a front surface oxidation film is arranged between the front surface antireflection film and the SiON laminated film and a front surface diffusion layer, and a back surface passivation film is arranged between the back surface electric field and the monocrystalline silicon substrate.
The invention provides a preparation method of an ingot single crystal and MWT battery structure, which comprises the following steps:
s01: carrying out laser drilling on the ingot casting monocrystalline silicon substrate;
s02: cleaning and polishing a monocrystalline silicon substrate: texturing and cleaning a monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon, and forming a pyramid textured surface;
s03: black silicon etching is carried out on the basic pyramid texture surface to form a small front black silicon texture surface;
s04: diffusing the front black silicon small suede to form a diffusion layer;
s05: removing PSG, performing edge isolation, and performing alkali polishing on the back surface;
s06: depositing an antireflection film and a SiON laminated film on the front surface of the monocrystalline silicon substrate:
s07: screen printing front conductive silver paste, printing hole plugging paste on the back, printing a back field pattern on the back, and sintering;
s08: and (4) carrying out light injection or electric injection process, and finally finishing the preparation of the battery.
Further improved, between the step S04 and the step S05, laser SE (Selective Emitter) is performed on the surface of the diffusion layer, surface thermal oxidation is performed, between the step S05 and the step S06, back passivation film deposition is performed on the back surface of the monocrystalline silicon substrate, annealing is performed, and between the step S06 and the step S07, laser windowing is performed on the back surface of the monocrystalline silicon substrate.
In a further improvement, the ingot single crystal silicon substrate in step S01 is a P-type or N-type silicon wafer.
In a further improvement, the black silicon etching in step S03 is dry or wet black silicon etching.
In a further improvement, the anti-reflection film and SiON laminated film described in step S06 is composed of two or more film layers.
Further improved, the surface of the diffusion layer is subjected to surface thermal oxidation to form single-sided oxidation or double-sided oxidation.
In a further improvement, the back passivation film is composed of more than two film layers.
The invention has the beneficial effects that:
1. the battery has the advantage of low cost of ingot casting monocrystalline silicon wafers, can be compatible with silicon wafers with the thickness of less than 150 microns, can further reduce the cost, conforms to the trend of market flaking, and can also be applied to flexible components;
2. the battery has a dark appearance of a black silicon + SiON laminated film structure, can effectively shield the lightening of crystal boundary, reduce surface reflection, increase light absorption, solve the appearance problem and simultaneously improve the battery efficiency;
3. the design combined with the MWT technology can reduce the grid line shielding to the greatest extent, further increase the light absorption, improve the current and the battery efficiency and improve the comprehensive power generation capacity of the component.
Drawings
FIG. 1 is a schematic structural diagram of an ingot single crystal black silicon + SiON laminated film + MWT battery.
FIG. 2 is a schematic structural diagram of an ingot single crystal black silicon + SiON laminated film + MWT-PERC battery.
Detailed Description
The invention will be further explained with reference to the drawings.
The first embodiment is as follows:
the invention provides an ingot casting single crystal black silicon + SiON laminated film + MWT battery structure, as shown in figure 1, the structure sequentially comprises a front antireflection film, an SiON laminated film 4, a front diffusion layer 3, a front black silicon small suede 2, a single crystal silicon substrate 1 and a back electric field 7 from top to bottom, wherein a front electrode 5 and a back electrode 8 are respectively arranged on two sides of the single crystal silicon substrate, the front electrode is embedded into the front antireflection film, the SiON laminated film and the front diffusion layer, and the back electrode is embedded into the back electric field; a through hole is formed in the center of the monocrystalline silicon substrate, one end of the through hole is sealed through the front electrode, and hole plugging slurry 6 is filled in the through hole.
Example two:
the invention provides an ingot casting single crystal black silicon + SiON laminated film + MWT + PERC battery structure, as shown in figure 2, comprising a front antireflection film, an SiON laminated film 4, a front oxidation film 9, a front diffusion layer 3, a front black silicon small suede 2, a single crystal silicon substrate 1, a back passivation film 10 and a back electric field 7, wherein the two sides of the single crystal silicon substrate are respectively provided with a front electrode 5 and a back electrode 8, the front electrode is embedded into the front antireflection film, the SiON laminated film and the front diffusion layer, and the back electrode is embedded into the back electric field; a through hole is formed in the center of the monocrystalline silicon substrate, one end of the through hole is sealed through the front electrode, and hole plugging slurry 6 is filled in the through hole.
The invention also provides a preparation method of the MWT + PERC/MWT ingot casting single crystal battery, which is characterized in that the high-efficiency battery is prepared by adopting the technologies of black silicon etching, SiON film deposition, MWT and PERC, a new technical route of the ingot casting single crystal battery is created, and the specific technical route is as follows:
s01, carrying out laser drilling on the ingot monocrystalline silicon wafer;
s02 silicon wafer cleaning and polishing: texturing and cleaning the P-type monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon, and forming a pyramid textured surface;
s03, black silicon etching is carried out on the basic pyramid suede to form a small suede;
s04, diffusing the front surface to form a diffusion layer;
s05, carrying out laser SE on the front surface;
carrying out surface thermal oxidation on the S06 silicon wafer;
s07 removing PSG to carry out edge isolation and carrying out back alkali polishing;
depositing a back passivation film on the back surface of S08, and annealing;
s09 front surface is deposited with anti-reflection film + SiON laminated film:
s10 laser windowing on the back;
s11 screen printing front conductive silver paste, printing hole plugging paste on the back (printing the hole plugging paste into holes which are previously drilled on a silicon wafer by laser from the back), printing a back field pattern on the back and sintering;
and S12, performing light injection or electric injection process, and finally completing the preparation of the battery.
Further: s01 can be an ingot single crystal P-type or N-type silicon wafer; s03 is a small suede formed by dry or wet black silicon etching; s04 may be a P-type or N-type diffusion; s06 can be single-sided oxidation or double-sided oxidation; the back passivation film in the S08 can be composed of more than two film layers; the front antireflective film + SiON laminated film in S09 may be composed of two or more layers.
Wherein S05, S06, S08 and S10 in the technical route are MWT and PERC superposition technical steps. If the technical scheme of ingot single crystal and MWT battery is selected, the technical route is as follows: s01, S02, S03, S04, S07, S09, S08 and S11.
While the invention has been described in terms of its preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (7)
1. A preparation method of an ingot single crystal and MWT battery structure is characterized by comprising the following steps:
s01: carrying out laser drilling on the ingot casting monocrystalline silicon substrate;
s02: cleaning and polishing a monocrystalline silicon substrate: texturing and cleaning a monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon, and forming a pyramid textured surface;
s03: black silicon etching is carried out on the basic pyramid texture surface to form a small front black silicon texture surface;
s04: diffusing the front black silicon small suede to form a diffusion layer;
s05: removing PSG, performing edge isolation, and performing alkali polishing on the back surface;
s06: depositing an antireflection film and a SiON laminated film on the front surface of the monocrystalline silicon substrate:
s07: screen printing front conductive silver paste, printing hole plugging paste on the back, printing a back field pattern on the back, and sintering;
s08: and (4) carrying out light injection or electric injection process, and finally finishing the preparation of the battery.
2. The method of claim 1 for preparing an ingot single crystal plus MWT cell structure, characterized in that: and between the step S04 and the step S05, performing laser SE on the surface of the diffusion layer and performing surface thermal oxidation, between the step S05 and the step S06, performing back passivation film deposition on the back surface of the monocrystalline silicon substrate, and then annealing, and between the step S06 and the step S07, performing laser windowing on the back surface of the monocrystalline silicon substrate.
3. The method for preparing an ingot single crystal plus MWT cell structure according to claim 1 or 2, characterized in that: the ingot single crystal silicon substrate in the step S01 is a P-type or N-type silicon wafer.
4. The method for preparing an ingot single crystal plus MWT cell structure according to claim 1 or 2, characterized in that: the black silicon etching in the step S03 is dry or wet black silicon etching.
5. The method for preparing an ingot single crystal plus MWT cell structure according to claim 1 or 2, characterized in that: the antireflective film plus SiON laminated film described in step S06 is composed of two or more film layers.
6. The method of preparing an ingot single crystal plus MWT cell structure of claim 2, characterized in that: and carrying out surface thermal oxidation on the surface of the diffusion layer to obtain single-sided oxidation or double-sided oxidation.
7. The method of preparing an ingot single crystal plus MWT cell structure of claim 2, characterized in that: the back passive film is composed of more than two film layers.
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2021
- 2021-11-02 CN CN202111287384.6A patent/CN113990985A/en active Pending
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