CN113990874A - Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation - Google Patents

Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation Download PDF

Info

Publication number
CN113990874A
CN113990874A CN202111181423.4A CN202111181423A CN113990874A CN 113990874 A CN113990874 A CN 113990874A CN 202111181423 A CN202111181423 A CN 202111181423A CN 113990874 A CN113990874 A CN 113990874A
Authority
CN
China
Prior art keywords
silylene
hydrogenated
strain
polarization
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202111181423.4A
Other languages
Chinese (zh)
Other versions
CN113990874B (en
Inventor
张诗俊
耿成铎
仲崇贵
董正超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantong University
Original Assignee
Nantong University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantong University filed Critical Nantong University
Priority to CN202111181423.4A priority Critical patent/CN113990874B/en
Publication of CN113990874A publication Critical patent/CN113990874A/en
Application granted granted Critical
Publication of CN113990874B publication Critical patent/CN113990874B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Abstract

The invention discloses a structural design for realizing ferroelectricity of unilateral semi-hydrogenated silylene based on strain regulation, which is realized by carrying out unilateral semi-hydrogenated silylene (Si) on a two-dimensional monoatomic layer2H) Strain regulation is carried out, a polarization overturning potential barrier is reduced on the premise of not influencing ferroelectric polarization, and the conversion of single-side semi-hydrogenated silylene from a pure polarization state to a ferroelectric state is tried to be realized, so that the single-side semi-hydrogenated silylene has ferroelectric properties; the structure not only has good stability, but also greatly reduces the information storage unit, and has the characteristics of polarization perpendicular to the film plane, easy reading and control through an external field.

Description

Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation
Technical Field
The invention belongs to the field of dielectric material application, and particularly relates to a structural design for realizing single-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation.
Background
With the continuous development of science and technology, the requirements for high-speed, low-consumption and nonvolatile memory devices are higher and higher, the traditional semiconductor process technology approaches the theoretical prediction limit at present, and the memory performance of the semiconductor process technology hardly meets the requirements of the future market. It is particularly important to find a new two-dimensional material with excellent ferroelectric properties. In 2016, Liu et al found that CuInP2S6 was stable and ferroelectric at room temperature. In 2017, Ding et al predicted that In2Se3 and other group III-VI Van der Waals materials are room temperature ferroelectric materials with both In-plane and out-of-plane ferroelectric polarization. In the same year, Zhou et al reported that stable out-of-plane piezoelectric properties and ferroelectricity were observed In 10 nm a-In 2Se3 thin films by methods such as scanning transmission electron microscopy, second harmonic generation, and raman spectroscopy. More and more two-dimensional ferroelectric materials are excavated.
Graphene is a hexagonal honeycomb two-dimensional material composed of a single layer of carbon atoms. A research heat trend has been caused by having many excellent properties including ultra-high conductive efficiency, excellent thermal conductive properties, super-hydrophobicity and mechanical properties. The structure of the silicon alkene is similar to that of the graphene, and the silicon alkene is of a hexagonal honeycomb structure, but the silicon alkene has tiny folds, and the spin-orbit coupling of the silicon alkene comprises the first-order spin-orbit coupling interaction, so that the hydrogenated silicon alkene has an energy gap larger than that of the hydrogenated graphene, and the proper energy gap is a necessary condition for judging whether the material has ferroelectricity. The single-side hydrogenated silicon alkene has three stable configurations of a sawtooth type, a ship type and an arm chair type. Both armchair and boat-type single-sided silylhydride are direct bandgap semiconductors with bandgaps of 1.79 eV and 1.14 eV, respectively, which are only half of those of the corresponding configuration of fully silylhydride. From the aspects of the size of the energy gap, the direct semiconductor property, the asymmetry of the structure and the like, the analysis finds that the unilateral hydrogenated handrail riding structure provides great possibility for two-dimensional ferroelectricity.
Disclosure of Invention
The invention aims to solve the problems and provides a structural design for realizing the ferroelectricity of the unilateral semi-hydrogenated silylene based on strain regulation; by unilateral half-hydridosilenes (Si) to two-dimensional monoatomic layers2H) Strain regulation is carried out to reduce the polarization on the premise of not reducing the ferroelectric polarizationThe barrier is turned over, so that the conversion of the single-side semi-hydrogenated silylene from a pure polarization state to a ferroelectric state is attempted to be realized, and the single-side semi-hydrogenated silylene has ferroelectric properties finally; the structure not only has good stability, but also greatly reduces the information storage unit, and has the characteristics of polarization perpendicular to the film plane, easy reading and control through an external field.
In order to achieve the purpose, the technical scheme of the invention is realized as follows: a structural design for realizing single-side semi-hydrogenated silylene ferroelectricity based on strain regulation and control comprises the following steps:
step one, a silicon alkene film
The reason why the silicon alkene is selected as the material for realizing and regulating the ferroelectric property is that: firstly, the direct band gap of the hydrogenated silylene is larger, and an external electric field is not easy to break down the film; secondly, the covalent bond between adjacent silicon in the silicon alkene film is longer, so that the radius of the silicon hexagonal ring is larger, and the hydrogen atom is convenient to turn over and the covalent bond is convenient to reconstruct; thirdly, because the content of silicon in nature is large and the silicon is used inexhaustibly, like graphene, the silicon is easy to prepare, the silicon can be uniformly deposited on a single crystal Ag substrate by a sputtering method to form a silicon film, and then the silicon film is prepared into a hydrogenated silicon film;
step two, designing a hydrogenated silylene polarization structure:
when the silylene adsorbs hydrogen atoms, the hydrogen atoms are generally uniformly adsorbed on two sides of the silylene film, and the formed hydrogenated silylene has a larger energy gap, but has high structural symmetry and does not have the condition of forming ferroelectricity, so that the silylene structure with the hydrogen adsorbed on one side is optimized by calculation, namely the silylene structure with the hydrogen adsorbed on one side is optimized in a polarization overturning mode, so that the hydrogen atoms are positioned below the silicon atoms; as a result, the silicon alkene is found to have strong polarization and high polarization reversal potential barrier due to the high degree of symmetry. Although the polar structure is stable due to the extremely high potential barrier, the electric dipole moment is difficult to turn over; the energy required for single dipole switching without applied strain is 1.484 eV;
step three, tensile strain:
fixing an Ag substrate on mechanical equipment, applying two-dimensional mechanical tensile stress to the substrate, and applying tensile strain to the hydrogenated silylene to reduce silylene wrinkles, increase the distance between adjacent silicon atoms, reduce a polarization overturning potential barrier, and enable the hydrogenated silylene to easily form single-side armchair type hydrogenated silylene;
step four, system energy gap control:
while the tensile strain control unilateral armchair type semi-hydrogenated silicon alkene barrier is reduced, the tensile strain is not suitable to be too large, and the insulation or the semiconductivity of the system must be ensured; according to theoretical calculations, tensile strains in excess of 25% can result in metallic properties.
Step five, single domain treatment:
with respect to the preparation of the silylhydride, since the resulting silylhydride is not necessarily of the one-sided armchair type, it may have no or little polarity; therefore, to obtain a structure with a large polarity, a single domain process is required; in order to realize single domain, according to the design structure of the second step, firstly, tensile strain is applied to the film, when the tensile strain applied to the hydrosilylation is 19-21%, an electric field in the vertical direction is applied to the film, the electric polarization strength is measured in real time, when the electric polarization strength of the hydrosilylation film is not increased any more, the electric field is stopped being increased, at the moment, the ferroelectric polarization reaches the saturation state, and the hydrosilylation film is converted into a single domain structure.
Further, in the third step, it is found that, when the tensile strain reaches 19%, the barrier of the one-side armchair-type half-hydrogenated silylene is reduced to 1.095eV, which is relatively similar to the polarization inversion barrier of other two-dimensional materials that can be practically used, and at this time, even if there is 19% tensile strain, the structure is still stable according to the structure calculated by the phonon spectrum.
Further, in the fourth step, when there is no strain, according to the results of experimental study or theoretical calculation, the energy gap of the system is about 2.3 eV, but as the strain increases, the energy gap gradually decreases; when the strain is 19%, the energy gap of the system is 0.371 eV, and when the strain of the system is increased to 20%, the system is transformed to a metal insulator phase, and the energy gap of the system is increased in the direction vertical to the plane of the film, so that the insulating property of the semi-hydrogenated silicon alkene film is increased and the semi-hydrogenated silicon alkene film is not easy to break down.
The invention provides a structural design for realizing single-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation, which has the following beneficial effects:
(1) the simple structure for realizing ferroelectric performance through the hydrogenated silylene is provided, and has the advantages of low dimensionality, small size and convenient polarization overturning control;
(2) the ferroelectric polarization of the structure is large, the structure is vertical to the surface of the single-layer film, and an external electric field is easy to read and write data; according to theoretical calculation, the iron electrode under 20% strain is 1.615 × 10-9C/m, which is nearly one order of magnitude greater than the polarization of other two-dimensional materials;
(3) the scheme has the advantages of convenient operation, easy processing, simple mechanism, capability of greatly improving the integration level and the like;
(4) the elements used in the scheme are rich in natural contents and are inexhaustible; the preparation scheme is mature.
Drawings
FIG. 1 is a view showing the structure of a armchair type unilateral hydrosilylation catalyst; wherein (a) is a top view; (b) is a side view;
FIG. 2 is a diagram showing the process of polarization inversion of armchair type unilateral hydrosilylation; wherein (a) is a structure diagram of H positioned above silicon; (b) is a structure diagram of turning H atoms into a plane; (c) is a structural diagram of H located under silicon.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
A structural design for realizing single-side semi-hydrogenated silylene ferroelectricity based on strain regulation and control comprises the following steps:
step one, a silicon alkene film:
silicon is uniformly deposited on a single crystal Ag substrate by a sputtering method, and then annealing treatment is carried out; putting the obtained silylene into an ultrahigh vacuum chamber, introducing high-purity hydrogen, and controlling the air pressure to be 1 multiplied by 10-5Pa to 1X 10-4Heating a cracking tungsten wire to 2000K under Pa, cracking hydrogen, and absorbing hydrogen for 20 minutes to obtain hydrosilylene;
step two, designing a hydrogenated silylene polarization structure:
theoretically, optimizing a one-side hydrogen-adsorbed silylene structure, namely performing optimization calculation on the one-side hydrogen-adsorbed silylene structure in a polarization overturning mode, and assuming that hydrogen atoms can pass through a six-ring region of the silicon atoms, so as to obtain polar structures below the silicon atoms;
step three, tensile strain:
fixing an Ag substrate on mechanical equipment, and applying two-dimensional biaxial compressive strain to the substrate, namely applying equal-proportion compressive stress to the substrate in orthogonal x and y directions in a plane; when stress is applied, the stress is gradually increased from small to large; note that for a pure unstrained silicon alkene film the tensile strain is required to lower its barrier, but for films grown on an Ag substrate, the silicon alkene is subjected to a tensile strain of about 24% or so due to an Ag face centered cubic lattice atomic spacing of 2.88 a, while the unstrained silicon alkene atomic spacing is about 2.32 a;
applying a compressive strain to the substrate, when the substrate strain is about-3.3% (the minus sign represents the compressive strain, when the tensile strain to which the hydrogenated-silylene film is subjected is about 20%, applying an electrostatic field in an upward direction perpendicular to the film surface, and measuring the ferroelectric polarization intensity of the film in situ in real time;
step four, system energy gap control:
under the strain, if the ferroelectric polarization is too sensitive to change with the external electric field, the saturation polarization is small, and the thin film is easy to break down, the substrate compressive strain can be properly increased, then the electric field is applied again, and the change of the ferroelectric polarization is observed from small increase until the ferroelectric polarization is relatively large (theoretical polarization: 1.615 × 10)-9C/m), and when the electric polarization reaches saturation, the film is not broken down;
step five, single domain treatment:
under the strained substrate, changing the direction of an external electric field to be vertical to the surface of the thin film and downward, gradually increasing the strength of the reversed electric field, measuring the magnitude of the polarization intensity in real time, and recording the relationship between the magnitude of the electric field and the polarization intensity until the electric field is increased and the polarization intensity is not increased any more. And completely recording the change of the electric polarization strength under the action of the forward electric field and the reverse electric field, and drawing an electric hysteresis loop.
FIG. 1 is a simplified schematic diagram showing different views of a single-side armchair-type of semi-hydrogenated silylene. In the figure, small atoms are H atoms, and large atoms are Si atoms; as can be seen from the figure (a), when the silylene is subjected to unilateral half hydrogenation, one H is respectively coordinated above the six-ring Si atoms in the next vicinity to form covalent bonds, so that the H forms a planar regular triangular lattice, and the H and the Si form an armchair structure as can be seen from the side view (b); in this structure, the Si-H bond is perpendicular to the film plane and since the Si-H bond is not a complete covalent bond, having an ionic component, the H plane is positively charged and the Si plane is negatively charged, resulting in the structure having a macroscopic upward ferroelectric polarization.
Fig. 2 shows the process of polarization flipping. In fig. 2 (a), all H atoms are located directly above Si atoms with ferroelectric polarization upward; when the H atoms are positioned on a plane, the wrinkles of the Si plane disappear, the Si-H covalent bonds weaken and the reconstruction starts, and the ferroelectric polarization is positioned in the plane, but the polarization is volatile due to the unstable structure. When the direction of the external electric field is downward, all H atoms turn to be below the Si wrinkle plane, so that the ferroelectric polarization is downward; fig. 2 (a) and (c) constitute a plane inversion symmetry structure corresponding to plane inversion symmetry with polarization up and down.
While the foregoing is directed to embodiments and effects of the present invention, it will be appreciated by those skilled in the art that various changes and modifications may be made without departing from the principles of the invention, and it is intended that all such changes and modifications be considered as within the scope of the invention.

Claims (3)

1. A structural design for realizing single-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation is characterized in that: the design scheme comprises the following steps:
step one, a silicon alkene film:
selecting silylene as a material for realizing and regulating ferroelectric performance, uniformly depositing the silylene on a single crystal Ag substrate by a sputtering method to form a silylene film, and preparing the silylene film into a hydrogenated silylene film;
step two, designing a hydrogenated silylene polarization structure:
theoretically, optimizing a one-side hydrogen-adsorbed silylene structure, namely optimizing the one-side hydrogen-adsorbed silylene structure in a polarization turnover mode, and supposing that hydrogen atoms can pass through a six-ring region of silicon atoms and are located below the silicon atoms;
step three, tensile strain:
fixing an Ag substrate on mechanical equipment, applying two-dimensional mechanical tensile stress to the substrate, and applying tensile strain to the hydrogenated silylene to reduce silylene wrinkles, increase the distance between adjacent silicon atoms, reduce a polarization overturning potential barrier, and enable the hydrogenated silylene to easily form single-side armchair type hydrogenated silylene;
step four, system energy gap control:
while the tensile strain control unilateral armchair type hydrogenated silicon alkene barrier is reduced, the tensile strain cannot be too large, and the insulation or the semiconductivity of the system must be ensured; according to theoretical calculation, when the tensile strain exceeds 25%, metallicity can be caused;
step five, single domain treatment:
with respect to the preparation of the silylhydride, since the resulting silylhydride is not necessarily of the one-sided armchair type, it may have no or little polarity; therefore, to obtain a structure with a large polarity, a single domain process is required; in order to realize single domain, according to the design structure of the second step, firstly, tensile strain is applied to the film, when the tensile strain applied to the hydrogenated silicon alkene is 19-21%, an electric field in the vertical direction is applied to the film, the electric polarization strength is measured in real time, when the electric polarization strength of the hydrogenated silicon alkene does not increase any more, the electric field is stopped to be increased, at the moment, the ferroelectric polarization reaches a saturation state, and the hydrogenated silicon alkene film is converted into a single domain structure.
2. The structural design for realizing single-side semihydrogenated silicon alkene ferroelectricity based on strain regulation and control of claim 1 is characterized in that: in the third step, the calculation finds that when the tensile strain reaches 19%, the barrier of the one-side armchair-type hydrogenated silicon alkene is reduced to 1.095eV, which is close to the polarization reversal barrier of other two-dimensional materials which can be practically used, and at this time, even if the tensile strain is 19%, the structure is still stable according to the structure calculated by the phonon spectrum.
3. The structural design for realizing single-side semihydrogenated silicon alkene ferroelectricity based on strain regulation and control of claim 1 is characterized in that: in the fourth step, when no strain exists, according to the result of experimental research or theoretical calculation, the energy gap of the system is about 2.3 eV, but the energy gap gradually decreases with the increase of the strain; when the strain is 19%, the energy gap of the system is 0.371 eV, and when the strain of the system is increased to 20%, the system is transformed to a metal insulator phase, and the energy gap of the system is increased in the direction vertical to the plane of the film, and then, the insulation performance of the hydrogenated silicon alkene film is increased and the breakdown is less prone to be caused.
CN202111181423.4A 2021-10-11 2021-10-11 Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation Active CN113990874B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111181423.4A CN113990874B (en) 2021-10-11 2021-10-11 Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111181423.4A CN113990874B (en) 2021-10-11 2021-10-11 Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation

Publications (2)

Publication Number Publication Date
CN113990874A true CN113990874A (en) 2022-01-28
CN113990874B CN113990874B (en) 2022-09-02

Family

ID=79738079

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111181423.4A Active CN113990874B (en) 2021-10-11 2021-10-11 Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation

Country Status (1)

Country Link
CN (1) CN113990874B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200091274A1 (en) * 2018-09-18 2020-03-19 Abhishek Sharma Non-linear gate dielectric material for thin-film transistors
CN111370567A (en) * 2020-03-20 2020-07-03 南通大学 BaTiO (BaTiO) based on mechanical strain regulation3Method for using polarization rotation in ferroelectric thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200091274A1 (en) * 2018-09-18 2020-03-19 Abhishek Sharma Non-linear gate dielectric material for thin-film transistors
CN111370567A (en) * 2020-03-20 2020-07-03 南通大学 BaTiO (BaTiO) based on mechanical strain regulation3Method for using polarization rotation in ferroelectric thin film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
李帅等: "硅烯表面的氢吸附", 《科学通报》 *

Also Published As

Publication number Publication date
CN113990874B (en) 2022-09-02

Similar Documents

Publication Publication Date Title
Cao et al. Electromagnetic response and energy conversion for functions and devices in low‐dimensional materials
Chowdhury et al. A theoretical review on electronic, magnetic and optical properties of silicene
Chen et al. Second-order nonlinear optical susceptibilities in asymmetric coupled quantum wells
CN109652858B (en) Method for preparing monocrystal hexagonal boron nitride by utilizing synergistic effect of interlayer coupling and step coupling
JP6730367B2 (en) Solar cell
Han et al. Recent advanced in energy harvesting and storage applications with two-dimensional layered materials
CN107331716A (en) A kind of method of direct growth Ge quantum dots on pyrographite alkenyl bottom
Yuan et al. Recent progress in 2D group-V elemental monolayers: fabrications and properties
Liu et al. Structure and interfacial properties investigation for ZnO/graphene interface
Ma et al. In situ grown size-controlled silicon nanocrystals: A p type nanocrystalline-Si: H/a-SiCx: H superlattice (p-nc-Si: H/a-SiCx: H) approach
Fan et al. Defects in graphene-based heterostructures: topological and geometrical effects
Liu et al. Stress and strain in perovskite/silicon tandem solar cells
Guo et al. Chemical functionalization induced photocatalytic performance for water splitting of silicene: a first-principles investigation
CN113990874B (en) Structural design for realizing one-side semi-hydrogenated silicon alkene ferroelectricity based on strain regulation
Ding et al. First-principles study of half-metallicity in semi-hydrogenated BC 3, BC 5, BC 7, and B-doped graphone sheets
Odahara et al. Macroscopic single-domain graphene growth on polycrystalline nickel surface
Zhang et al. First-principles study on the electronic and magnetic properties of hydrogenated CdS nanosheets
Chernozatonskii et al. Formation of graphene quantum dots by “Planting” hydrogen atoms at a graphene nanoribbon
Chen et al. Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review
CN208225875U (en) Capacitor device structure and capacitor with combination electrode
Sun et al. Tailoring residual stress through precursor-heating strategy for high mechanical stability flexible Cu2ZnSn (S, Se) 4 thin film solar cells
Li et al. Strain and electric-field induced tunable electronic properties of blue phosphorus-GeS/SnS/SnSe (orthorhombic) vdW heterostructures
Wang et al. Diamond film, single-layer carbon nanosheet film and diamond/carbon nanosheet composite film synthesis and field emission performance comparison
Li et al. Tunable electronic properties of BSe–MoS 2/WS 2 heterostructures for promoted light utilization
Ma et al. First-principle study of shear deformation effect on Mg adsorption by monolayer SnS2

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant