CN113990768A - Wafer transmission position monitoring method of bonding equipment - Google Patents
Wafer transmission position monitoring method of bonding equipment Download PDFInfo
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- CN113990768A CN113990768A CN202111266558.0A CN202111266558A CN113990768A CN 113990768 A CN113990768 A CN 113990768A CN 202111266558 A CN202111266558 A CN 202111266558A CN 113990768 A CN113990768 A CN 113990768A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a wafer transmission position monitoring method of bonding equipment, which comprises the following steps: providing two wafers; trimming the edge of one wafer to form an annular groove with a preset width inwards at the edge of the wafer; growing an oxide layer on the surface of the annular groove of the wafer without covering the annular groove; carrying out chemical mechanical grinding thinning and surface flattening treatment on the oxide layer; cleaning the surface of the thinned and smoothed oxide layer; bonding the wafer and another wafer on bonding equipment through the cleaned oxide layer to form a bonded wafer; annealing the bonded wafer; and carrying out ultrasonic scanning microscope detection on the annealed bonded wafer, and judging whether the relative positions of the two wafers transmitted on the bonding equipment deviate or not according to whether the widths of the clamping grooves of the bonded wafer are the same or not so as to monitor the wafer transmission position of the bonding equipment. The invention can monitor the wafer transmission position of the bonding equipment.
Description
Technical Field
The invention relates to the field of integrated circuit manufacturing processes, in particular to a wafer transmission position monitoring method of bonding equipment.
Background
The Wafer Bonding (Wafer Bonding) technology is mainly applied to the manufacturing process of integrated circuits such as micro-electro-mechanical systems (MEMS), image sensors (CIS), memories and the like, and is one of the key processes in the whole process flow. The bonding technique has a significant impact on pattern alignment of subsequent photolithography processes in wafer fabrication, and also determines the yield of the entire wafer. The alignment accuracy of the wafer in the bonding apparatus is high, and the initial transfer position of the wafer plays a crucial role. The initial position has a large influence on the deformation of the wafer during the bonding process and the Distortion (deformation) of the bonded pattern. The current bonding equipment mainly depends on the calibration of the transfer position during maintenance, and no method for effectively monitoring the wafer transfer position exists.
Disclosure of Invention
The invention aims to provide a wafer transmission position monitoring method of bonding equipment, which aims to solve the problem that the wafer transmission position of the bonding equipment is not monitored.
To achieve the above object, the present invention provides a method for monitoring a wafer transfer position of a bonding apparatus, comprising:
providing two wafers;
trimming the edge of one wafer to form an annular groove with a preset width inwards at the edge of the wafer;
growing an oxide layer on the surface of the annular groove of the wafer without covering the annular groove;
carrying out chemical mechanical grinding thinning and surface flattening treatment on the oxide layer;
cleaning the surface of the thinned and smoothed oxide layer;
bonding the wafer and another wafer on bonding equipment through the cleaned oxide layer to form a bonded wafer;
annealing the bonded wafer;
and carrying out ultrasonic scanning microscope detection on the annealed bonded wafer, and judging whether the relative positions of the two wafers transmitted on the bonding equipment deviate or not according to whether the widths of the clamping grooves of the bonded wafer are the same or not so as to monitor the wafer transmission position of the bonding equipment.
Further, according to the wafer transmission position monitoring method of the bonding equipment provided by the invention, when the widths of the clamping grooves of the bonded wafers are the same, the relative positions of the two wafers transmitted on the bonding equipment are judged not to be deviated, and the transmission positions of the two wafers before bonding are determined to be aligned.
Further, according to the wafer transmission position monitoring method of the bonding equipment provided by the invention, when the widths of the clamping grooves of the bonded wafers are different, the positions of the two wafers transmitted on the bonding equipment are judged to be deviated, and the misalignment of the transmission positions of the two wafers before bonding is determined.
Further, according to the wafer transfer position monitoring method of the bonding apparatus provided by the present invention, when the widths of the clamping grooves of the bonded wafer at least at two sides in a certain direction are different, the side where the width of the clamping groove is larger is determined as the offset direction.
Further, in the method for monitoring the wafer transfer position of the bonding apparatus provided by the present invention, the clamping groove is a distance between an inner edge line of an annular groove of a wafer having the annular groove formed therein and an outer edge of an outer profile of another wafer.
Furthermore, the wafer transmission position monitoring method of the bonding equipment provided by the invention cleans the surface of the thinned and planarized oxide layer through a wet process.
Further, according to the wafer transfer position monitoring method of the bonding apparatus provided by the invention, the depth of the annular groove of the wafer is 100 μm to 200 μm, and the width of the annular groove is 1000 μm to 2000 μm.
Furthermore, the wafer transmission position monitoring method of the bonding equipment provided by the invention grows the oxide layer on the wafer without covering the annular groove through the chemical vapor deposition equipment.
Furthermore, the wafer transmission position monitoring method of the bonding equipment provided by the invention has the advantage that the thickness of the oxide layer grown on the wafer is equal to
To
Further, the wafer transfer position monitoring method of the bonding apparatus provided by the invention has the thickness of the oxide layer with reduced thickness and surface planarization
To
Compared with the prior art, the wafer transmission position monitoring method of the bonding equipment provided by the invention has the advantages that the annular groove is formed in one of the two wafers, the oxide layer is grown, the wafer is bonded with the other wafer through the oxide layer to form the bonded wafer, the width of the clamping groove of the bonded wafer is measured after the detection of the ultrasonic scanning microscope, and whether the relative positions of the two wafers transmitted on the bonding equipment deviate or not is judged through whether the width of the clamping groove of the bonded wafer is the same or not, so that the wafer transmission position of the bonding equipment is monitored. The monitoring data can be used for providing a calibration reference basis for subsequent wafer bonding so as to calibrate and guide the bonding equipment to adjust the transmission position, ensure that the transmission position of the wafer can be aligned before the subsequent wafer bonding, improve the stability of the bonding equipment and improve the process stability and yield of products. Wherein the monitoring data refers to the widths of the clamping grooves in different directions.
Drawings
FIG. 1 is a schematic side view of a second wafer;
FIG. 2 is a schematic diagram of a side view of a first wafer;
FIG. 3 is a side view of a first wafer being trimmed to form an annular groove;
FIG. 4 is a schematic diagram of a top view of a first wafer being trimmed to form an annular groove;
FIG. 5 is a schematic diagram of a side view of an oxide layer formed on a first wafer;
FIG. 6 is a schematic side view of a first wafer with an oxide layer thinned and planarized;
FIG. 7 is a schematic diagram of a side view of a bonded wafer formed by bonding two wafers;
FIGS. 8-9 are schematic top views of bonded wafers inspected by an ultrasonic scanning microscope;
shown in the figure:
100. bonding the wafer;
110. a first wafer 111, an annular groove;
120. a second wafer;
130. an oxide layer;
140. a clamping groove;
w1, left side width;
w2, right side width.
Detailed Description
The structure and method for forming a via hole in a metal line according to the present invention will be described in detail with reference to the accompanying drawings and embodiments. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a method for monitoring a wafer transfer position of a bonding apparatus, which may include:
in step S1, please refer to fig. 1 to 2, two wafers are provided, and the two wafers are set as the first wafer 110 and the second wafer 120.
Step S2, please refer to fig. 3 to 4, in which the edge of one of the wafers is trimmed to form an annular groove 111 with a predetermined width inward at the edge of the one of the wafers; in step S2, the first wafer 110 is provided with the annular groove 111, and the second wafer 120 is not provided with the annular groove; as a modification, the second wafer 120 may be provided with an annular groove, and the first wafer 110 may not be provided with an annular groove. The depth of the annular groove 111 on the first wafer 110 may be 100 μm to 200 μm, and the width may be 1000 μm to 2000 μm. The depth and width parameters of the annular groove 111 can be appropriately adjusted as needed.
In step S3, referring to fig. 5, an oxide layer 130 is grown on the surface of the first wafer 110 where the annular groove 111 is located, and the annular groove 111 is not covered. That is, the first wafer 110 has two surfaces, one flat surface, one surface provided with an annular groove 111,an oxide layer 130 is grown on the surface having the annular groove 111. The thickness of the oxide layer 130 grown on the first wafer 110 may be
To
Step S4, referring to fig. 6, performing chemical mechanical polishing and thinning and surface planarization on the oxide layer 130; the thickness of the thinned and planarized oxide layer 130 may be
To
Wherein the thickness of the grown oxide layer 130 is
To
The thickness of the oxide layer 130 is reduced and the surface thereof is planarized to meet the requirement, so as to improve the bonding quality.
Step S5, performing surface cleaning on the thinned and planarized oxide layer 130; the surface cleaning may be performed by a cleaning process such as a wet process.
In step S6, referring to fig. 7, the wafer (the first wafer 110) and the other wafer (the second wafer 120) are bonded to form a bonded wafer 100 on the bonding apparatus through the cleaned oxide layer 130.
In step S7, the bonded wafer 100 is annealed.
Step S8, please refer to fig. 8 to 9, in which ultrasonic scanning microscope (CSAM) detection is performed on the annealed bonded wafer 100, and whether the relative positions of two wafers conveyed on the bonding apparatus are shifted is determined according to whether the widths of the clamping grooves 140 of the bonded wafer 100 are the same, so as to monitor the wafer conveying position of the bonding apparatus. On the premise that the condition is satisfied, the annealed bonded wafer 100 may be scanned and detected by another microscope.
Referring to fig. 9, when the widths of the clamping grooves 140 of the bonded wafers 100 are the same, it is determined that the relative positions of the two wafers transferred on the bonding apparatus are not shifted, and it is determined that the transfer positions of the two wafers before bonding are aligned. Taking the horizontal direction as an example, the width W1 on the left side of the pod 140 is the same as the width W2 on the right side of the pod 140, i.e., it is monitored that the wafer transfer position of the bonding apparatus is aligned. At this time, the first wafer 110 and the second wafer 120 are completely overlapped, that is, the outer contour edges of the two wafers are completely overlapped, the annular groove 111 is overlapped with the clamp groove 140, that is, the width of the annular groove 111 is the same as the width of the clamp groove 140. Wherein the clamping groove 140 is a distance between an inner edge line of the annular groove 111 of the wafer of the bonded wafer 100 having the annular groove 111 formed therein and an outer contour edge of another wafer. Wherein the width of the clamping groove is the same and included in the error range or the preset range.
Referring to fig. 8, when the widths of the clamp grooves 140 of the bonded wafers 100 are different, it is determined that the positions of the two wafers transferred on the bonding apparatus have shifted, and it is determined that the transfer positions of the two wafers before bonding are misaligned.
Referring to fig. 9, in order to determine the offset direction, in the wafer transfer position monitoring method of the bonding apparatus according to the embodiment of the present invention, when the widths of at least two sides of the clamp groove 140 of the bonded wafer 100 in a certain direction are different, the side where the width of the clamp groove 140 is larger is determined as the offset direction. Taking the horizontal direction as an example, if the width W1 on the left side of the clip slot 140 is smaller than the width W2 on the right side of the clip slot 140, the transfer positions of the two wafers bonded to the wafers are shifted and misaligned. That is, the second wafer 120 is horizontally offset to the right with respect to the first wafer 110, and the first wafer 110 is horizontally offset to the left with respect to the second wafer 120 from a relative perspective. Only one direction is illustrated in fig. 9, and an actual offset may include multiple directions. In order to facilitate monitoring of the offset direction of the wafer transfer position, the wafer transfer position can be monitored in the horizontal direction and the vertical direction at the same time, that is, the widths of the clamp grooves 140 on both sides of the bonded wafer 100 in the horizontal direction are compared with the widths of the clamp grooves 140 on both sides of the bonded wafer 100 in the vertical direction, so as to calibrate the transfer position of the subsequent bonded wafer according to the data of the widths of the clamp grooves 140 in the up, down, left, and right directions.
Referring to fig. 5, in the wafer transfer position monitoring method of the bonding apparatus according to the embodiment of the present invention, an oxide layer 130 may be grown on the wafer without covering the annular groove 111 by a Chemical Vapor Deposition (CVD) apparatus.
According to the wafer transmission position monitoring method of the bonding equipment provided by the embodiment of the invention, the annular groove 111 is arranged on one of the two wafers, the oxide layer 130 is grown, then the wafer is bonded with the other wafer through the oxide layer 130 to form the bonded wafer 100, the width of the clamping groove 140 of the bonded wafer 100 is measured after the detection of the ultrasonic scanning microscope, and whether the relative positions of the two wafers transmitted on the bonding equipment deviate or not is judged according to whether the widths of the clamping grooves 140 of the bonded wafer 100 are the same, so that the wafer transmission position of the bonding equipment is monitored. The monitoring data can be used for providing a calibration reference basis for subsequent wafer bonding so as to calibrate and guide the bonding equipment to adjust the transmission position, ensure that the transmission position of the wafer can be aligned before the subsequent wafer bonding, improve the stability of the bonding equipment and improve the process stability and yield of products. Wherein the monitoring data refers to the width of the pinch groove 140 in different directions.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A wafer transfer position monitoring method of a bonding apparatus, comprising:
providing two wafers;
trimming the edge of one wafer to form an annular groove with a preset width inwards at the edge of the wafer;
growing an oxide layer on the surface of the annular groove of the wafer without covering the annular groove;
carrying out chemical mechanical grinding thinning and surface flattening treatment on the oxide layer;
cleaning the surface of the thinned and smoothed oxide layer;
bonding the wafer and another wafer on bonding equipment through the cleaned oxide layer to form a bonded wafer;
annealing the bonded wafer;
and carrying out ultrasonic scanning microscope detection on the annealed bonded wafer, and judging whether the relative positions of the two wafers transmitted on the bonding equipment deviate or not according to whether the widths of the clamping grooves of the bonded wafer are the same or not so as to monitor the wafer transmission position of the bonding equipment.
2. The method as claimed in claim 1, wherein when the widths of the clamping grooves of the bonded wafers are the same, it is determined that the relative positions of the two wafers transferred on the bonding apparatus are not shifted, and it is determined that the transfer positions of the two wafers before bonding are aligned.
3. The method as claimed in claim 1, wherein when the widths of the clamping grooves of the bonded wafers are different, it is determined that the positions of the two wafers transferred on the bonding apparatus have shifted, and it is determined that the transfer positions of the two wafers before bonding are misaligned.
4. The method as claimed in claim 3, wherein the side of the chuck slot with the larger width is determined as the offset direction when the width of the chuck slot is different at least at two sides of the bonded wafer in a certain direction.
5. The method as claimed in claim 1, wherein the clamping groove is a distance between an inner edge line of a ring groove of a wafer of the bonded wafer having the ring groove formed therein and an outer edge of an outer contour of another wafer.
6. The method of monitoring a wafer transfer position of a bonding apparatus according to claim 1, wherein the surface cleaning is performed on the thinned and planarized oxide layer by a wet process.
7. The method as claimed in claim 1, wherein the wafer has a ring-shaped groove with a depth of 100 μm to 200 μm and a width of 1000 μm to 2000 μm.
8. The method of claim 1, wherein an oxide layer is grown on the wafer without covering the ring groove by the chemical vapor deposition apparatus.
9. The method of claim 1, wherein the oxide layer is grown on the wafer to a thickness of
To
10. The method of claim 9, wherein the reduced and planarized oxide layer has a thickness of
To
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111266558.0A CN113990768A (en) | 2021-10-28 | 2021-10-28 | Wafer transmission position monitoring method of bonding equipment |
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| CN202111266558.0A CN113990768A (en) | 2021-10-28 | 2021-10-28 | Wafer transmission position monitoring method of bonding equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114739294A (en) * | 2022-04-15 | 2022-07-12 | 中山大学南昌研究院 | Structure and method for detecting bonding offset |
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2021
- 2021-10-28 CN CN202111266558.0A patent/CN113990768A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114739294A (en) * | 2022-04-15 | 2022-07-12 | 中山大学南昌研究院 | Structure and method for detecting bonding offset |
| CN114739294B (en) * | 2022-04-15 | 2024-05-14 | 中山大学南昌研究院 | Structure and method for detecting bonding offset |
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