CN113990675A - CoPi/BiVO for high-performance solar charging device4Faraday photoelectrode material and preparation method thereof - Google Patents
CoPi/BiVO for high-performance solar charging device4Faraday photoelectrode material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 13
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 229910002915 BiVO4 Inorganic materials 0.000 claims abstract description 51
- 238000004070 electrodeposition Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000003792 electrolyte Substances 0.000 claims abstract description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 239000004744 fabric Substances 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 43
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000008057 potassium phosphate buffer Substances 0.000 claims description 8
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 4
- 239000007772 electrode material Substances 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 238000004146 energy storage Methods 0.000 abstract description 13
- 239000011232 storage material Substances 0.000 abstract description 8
- 239000008151 electrolyte solution Substances 0.000 abstract 1
- 229910002451 CoOx Inorganic materials 0.000 description 22
- 239000000523 sample Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- 238000011068 loading method Methods 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 3
- 238000002484 cyclic voltammetry Methods 0.000 description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
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- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
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- 238000007254 oxidation reaction Methods 0.000 description 2
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- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
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Abstract
The invention discloses a CoPi/BiVO for a high-performance solar charging device4A Faraday photoelectrode material and a preparation method thereof, wherein CoPi is loaded on a semiconductor BiVO by an electrodeposition method4Surface as CoPi/BiVO4A Faraday junction photoelectrode, the solar charging device comprising a CoPi/BiVO4The Faraday junction photoelectrode and the counter electrode carbon cloth are provided with two ports, and electrolyte is filled between the two ports. The two electrodes are immersed in electrolyte solution and connected through an external circuit to construct a two-port device. The invention uses the CoPi for the high-output voltage solar charging device for energy storage for the first time, and the performance of the solar charging device is obviously improved by selecting the energy storage material with the positive starting potential. Based on the fact that the CoPi with the positive opening potential is used as the energy storage material for the first time, the current output voltage is prepared to be the mostHigh two port solar charging device.
Description
Technical Field
The inventionRelates to the field of solar charging devices, in particular to a CoPi/BiVO for a high-performance solar charging device4Faraday photoelectrode material and a preparation method thereof.
Background
Global energy and environmental crisis has raised increased attention to renewable clean energy storage technologies. The use of solar energy is an effective way to alleviate this crisis. Designing a light chargeable energy storage system composed of energy storage units such as a photovoltaic cell and a super capacitor is a common method for improving solar energy conversion and storage efficiency. However, the existing solar rechargeable device is usually a four-port or three-port device, and such a multi-port system has been prevented from being widely used due to the disadvantages of heavy equipment and low transmission efficiency. A two-port solar rechargeable device based on a Faraday junction is developed later, but the lower output voltage (0.5V) limits the further development and utilization of the two-port solar rechargeable device, and the development of the solar rechargeable device with the higher output voltage is urgent.
Disclosure of Invention
The invention aims to provide a CoPi/BiVO for a high-performance solar charging device4The Faraday photoelectrode material and the preparation method thereof, thereby meeting the requirements of practical application.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
CoPi/BiVO for high-performance solar charging device4Faraday photoelectrode material, in which CoPi is supported on semiconductor BiVO by electrodeposition4Surface as CoPi/BiVO4A faraday junction photoelectrode.
The CoPi/BiVO4The preparation method of the Faraday photoelectrode material comprises the following steps:
step (1) of preparing BiVO4A photo-anode;
step (2), preparing an electrodeposition solution: 0.5mM Co (NO)3)2Dissolving in 100mL of 1M potassium phosphate buffer solution having pH 7 to prepare an electrodeposition solution;
and (3) depositing a CoPi film by three electrodes: using Shanghai ChenghuaCHI 760e electrochemical workstation, and reacting the BiVO obtained in the step (1)4As a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and the solution in the step (2) as an electrolyte; setting the potential to be 1.1Vvs. Ag/AgCl by using the current-time mode of the electrochemical workstation, and when the deposited electric quantity reaches 20mC/cm2Stopping deposition to obtain CoPi/BiVO4Faraday junction photoelectrode material.
Further, the step (1) comprises the steps of:
(11) a metallic Bi layer is first deposited on an FTO substrate, and 20mM Bi (NO) is added3)3·5H2Dissolving O in 100mL of ethylene glycol to prepare an electrodeposition solution;
(12) using FTO as a working electrode, a silver/silver chloride electrode as a reference electrode, and a platinum sheet as a counter electrode; the solution in the step (11) is used as electrolyte, and the potential is set to be-1.8 Vvs. Ag/AgCl by utilizing the current-time mode of an electrochemical workstation; the total electric deposition capacity is 300mC/cm2Then washing the metal Bi film by using ethanol and drying the metal Bi film;
(13) then 0.1mL of 150mM VO (acac)2The DMSO solution is dripped on the surface of the metal Bi film prepared in the step (12) and completely covers the metal Bi film;
(14) then putting the sample obtained in the step (13) into a muffle furnace, and calcining the sample in air at 450 ℃ for 2 hours at a heating rate of 2 ℃/min; in a muffle furnace, the metals Bi and VO2+Oxidized and reacted with each other to generate BiVO4A sample;
(15) finally, BiVO obtained by the step (14)4The sample was immersed in 1M NaOH solution for 30 minutes to remove the residual by-product V2O5Obtaining the BiVO4And a photo-anode.
CoPi/BiVO4Application of Faraday electrode material in high-performance solar charging device comprising CoPi/BiVO4The two-port device comprises a Faraday junction photoelectrode and a counter electrode carbon cloth, wherein an electrolyte, namely 1M potassium phosphate buffer solution, is filled between the two ports, and the two electrodes are connected through an external circuit to construct a two-port device.
Has the advantages that: the invention has the following advantages:
(1) the invention applies the CoPi with the positive opening potential to the field of energy storage for the first time, prepares the two-port solar charging device with the highest current output voltage and expands the selection space of energy storage materials.
(2) CoPi/BiVO-based method of the invention4The solar charging device of the Faraday junction has high output voltage, and the output power of the two-port solar charging device can be greatly improved.
(3) The device of the invention has simple preparation method, low preparation cost and lower requirement on material preparation equipment, and is expected to realize industrialized use.
Drawings
FIG. 1 shows CoPi/FTO electrode and CoOxHyXRD pattern of/FTO electrode.
FIG. 2 shows CoPi/FTO electrodes (FIG. 2a) and CoOxHySEM image of/FTO electrode (FIG. 2 b).
FIG. 3 shows CoPi/FTO electrodes (FIG. 3a) and CoOxHyTEM image of/FTO electrode (FIG. 3 b).
FIG. 4 shows CoPi/FTO electrode and CoOxHyCyclic voltammogram of/FTO electrode.
FIG. 5 is BiVO4Bare chip and CoPi/BiVO after loading4Faraday junction photoelectrode and CoOxHy/BiVO4XRD pattern of faraday junction photoelectrode.
FIG. 6 is BiVO4Bare chip (FIG. 6a), CoPi/BiVO after loading4Faraday junction photoelectrode (FIG. 6b) and CoOxHy/BiVO4SEM image of faraday junction photoelectrode (fig. 6 c).
FIG. 7 shows CoPi/BiVO4Faraday junction photoelectrode, CoOxHy/BiVO4The solar charging device composed of the Faraday junction photoelectrode and the counter electrode carbon cloth responds to alternating currents of illumination and dark states under the condition of no external voltage.
FIG. 8 shows CoPi/BiVO4Faraday junction photoelectrode, CoOxHy/BiVO4Faraday junction photoelectrode separately and oppositelyAnd the solar charging device composed of the carbon cloth has voltage response under the alternation of light charging and dark state discharging.
Detailed Description
The invention will be described in further detail with reference to the following drawings and specific embodiments.
The Faraday junction photovoltage is the difference value of the Fermi level of the semiconductor optical anode and the opening potential of the energy storage material. Therefore, the design of the solar charging device with high output voltage requires selecting an energy storage material with a positive turn-on potential.
CoPi/BiVO for high-performance solar charging device4Faraday photoelectrode material, in which CoPi is supported on semiconductor BiVO by electrodeposition4Surface as CoPi/BiVO4A Faraday junction photoelectrode material, the solar charging device comprises CoPi/BiVO4The two-port device comprises a Faraday junction photoelectrode and a counter electrode carbon cloth, wherein an electrolyte, namely 1M potassium phosphate buffer solution, is filled between the two ports, and the two electrodes are connected through an external circuit to construct a two-port device. Common cobalt-based energy storage material CoOxHyAs a reference sample, CoO was preparedxHy/BiVO4A Faraday junction and a solar charging device.
The invention is explained in more detail below with reference to exemplary embodiments and the drawing.
Example 1:
in the embodiment, the CoPi is loaded on the surface of the FTO of the conductive substrate by an electrodeposition method;
the electrodeposition method for preparing the CoPi on the surface of the FTO of the conductive substrate comprises the following steps:
step (1), preparing an electrodeposition solution: 0.5mM Co (NO)3)2Dissolved in 100mL of potassium phosphate buffer solution (pH 7) to prepare an electrodeposition solution;
step (2), three-electrode deposition of a CoPi film: taking a conductive substrate FTO as a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and taking the solution obtained in the step (1) as electrolyte; setting up by means of current-time mode of electrochemical workstationThe potential is 1.1V vs. Ag/AgCl, and when the deposited electricity reaches 100mC/cm2The deposition is stopped to obtain the CoPi/FTO electrode.
Example 2:
in this example, a CoPi was supported on a semiconductor photoanode BiVO by electrodeposition4Constructing CoPi/BiVO on the surface4A faraday junction photoelectrode, and a commercial hydrophilic carbon cloth purchased as a counter electrode, then both electrodes were immersed in a 1M potassium phosphate buffer solution at pH 7, and the two electrodes were connected to an external circuit by a wire.
The electrodeposition method is carried out on BiVO4The preparation of the CoPi comprises the following steps:
step (1) of preparing BiVO4Photo-anode: a metallic Bi layer is first deposited on an FTO substrate, and 20mM Bi (NO) is added3)3·5H2O was dissolved in 100mL of ethylene glycol to prepare an electrodeposition solution. FTO is used as a working electrode, a silver/silver chloride electrode is used as a reference electrode, and a platinum sheet is used as a counter electrode. The potential was set at-1.8V vs. ag/AgCl using the current-time mode of the electrochemical workstation. The total electric deposition capacity is 300mC/cm2After that, the film was washed with ethanol and blown dry. Then 0.1mL of 150mM VO (acac)2(DMSO is used as a solvent) is dripped on the surface of the prepared metal Bi film, and the metal Bi film is completely covered. The sample was then placed in a muffle furnace and calcined in air at 450 ℃ for 2 hours (heating rate 2 ℃/min). In a muffle furnace, the metals Bi and VO2+Oxidized and reacted with each other to generate BiVO4. Finally, the residual by-product V was removed by soaking the sample in 1M NaOH solution for 30 minutes2O5；
Step (2), preparing an electrodeposition solution: 0.5mM Co (NO)3)2Dissolved in 100mL of potassium phosphate buffer solution (pH 7) to prepare an electrodeposition solution;
and (3) depositing a CoPi film by three electrodes: BiVO (bismuth oxide) is added4As a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and the solution in the step (2) as an electrolyte; setting the potential to be 1.1V vs. Ag/AgCl by using the current-time mode of the electrochemical workstation when the electric quantity is depositedUp to 20mC/cm2Stopping deposition to obtain CoPi/BiVO4A faraday junction photoelectrode.
Example 3:
in this example, a common cobalt-based energy storage material CoO was usedxHyAs a reference. CoO is formed by electrodepositionxHyCarried on the surface of a conductive substrate FTO;
preparing CoO on surface of FTO (fluorine doped tin oxide) of conductive substrate by electrodeposition methodxHyThe method comprises the following steps:
step (1), preparing an electrodeposition solution: 0.1M Co (NO)3)2Dissolving in 100mL of deionized water solution to prepare an electrodeposition solution;
step (2), three-electrode deposition of CoOxHyFilm formation: BiVO (bismuth oxide) is added4As a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and the solution in the step (1) as an electrolyte; setting the potential to be-0.8V vs. Ag/AgCl by using the current-time mode of the electrochemical workstation, and when the deposited electric quantity reaches 100mC/cm2The deposition was stopped and then at 0.5M Na2SO4Solution oxidation activation to obtain CoOxHy/BiVO4A faraday junction photoelectrode.
Example 4:
CoO is formed by electrodepositionxHyBiVO loaded on semiconductor photo-anode4Surface, construction of CoOxHy/BiVO4A faraday junction photoelectrode and a commercial hydrophilic carbon cloth purchased as a counter electrode, both electrodes were then immersed in a 0.5M sodium sulfate solution at pH 7, and the two electrodes were connected to an external circuit by a wire.
The electrodeposition method is carried out on BiVO4Preparation of CoOxHyThe method comprises the following steps:
step (1) of preparing BiVO4Photo-anode: a metallic Bi layer is first deposited on an FTO substrate, and 20mM Bi (NO) is added3)3·5H2O was dissolved in 100mL of ethylene glycol to prepare an electrodeposition solution. Using FTO as working electrode and silver/silver chloride electrode asAs a reference electrode, a platinum sheet was used as a counter electrode. The potential was set at-1.8V vs. ag/AgCl using the current-time mode of the electrochemical workstation. After electrodeposition, the film was washed with ethanol and blown dry. Then 0.1mL of 150mM VO (acac)2(DMSO is used as a solvent) is dripped on the surface of the prepared metal Bi film, and the metal Bi film is completely covered. The sample was then placed in a muffle furnace and calcined in air at 450 ℃ for 2 hours (heating rate 2 ℃/min). In a muffle furnace, the metals Bi and VO2+Oxidized and reacted with each other to generate BiVO4. Finally, the residual by-product V was removed by soaking the sample in a 1M NaOH solution2O5；
Step (2), preparing an electrodeposition solution: 0.1M Co (NO)3)2Dissolving in 100mL of deionized water solution to prepare an electrodeposition solution;
step (3), three-electrode deposition of CoOxHyFilm formation: BiVO (bismuth oxide) is added4As a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and the solution in the step (2) as an electrolyte; setting the potential to be-0.8V vs. Ag/AgCl by using the current-time mode of the electrochemical workstation, and when the deposited electricity quantity reaches 20mC/cm2The deposition was stopped and then at 0.5M Na2SO4Solution oxidation activation to obtain CoOxHy/BiVO4A faraday junction photoelectrode.
Referring to FIG. 1, the XRD pattern of the CoPi/FTO electrode only shows the characteristic peak of the FTO of the conductive substrate, and no CoPi and CoO appearxHyThe result shows that CoPi and CoO are prepared by the electrodeposition methodxHyPossibly amorphous.
Referring to FIG. 2, some cracks, probably caused by dehydration during the photographing process, were observed in the SEM image of the CoPi/FTO electrode, and CoO was observedxHyThe SEM pattern of the/FTO electrode can observe a sheet-like pattern.
Referring to FIG. 3, a TEM image of a CoPi/FTO electrode can confirm that CoPi prepared by the electrodeposition method is amorphous and CoO prepared by the electrodeposition methodxHyIs in a polycrystalline state.
Referring to FIG. 4, cyclic voltammograms of CoPi/FTO electrodes tested in a three-electrode system. As can be seen from the cyclic voltammograms, the CoPi has a positive opening potential of 1.3V, while the CoOxHyHas a relatively negative turn-on potential of 0.80V.
Referring to FIG. 5, BiVO4Bare chip and CoPi/BiVO after loading4XRD pattern of faraday junction photoelectrode. XRD pattern shows only conductive substrate FTO and semiconductor BiVO4Also no CoPi and CoO appearedxHyCharacteristic peak of (2).
Referring to FIG. 6, BiVO4Bare chip and CoPi/BiVO after loading4Surface SEM image of faraday junction photoelectrode. From the surface SEM image, it can be seen that CoPi was uniformly supported on BiVO4On the surface, some cracks were observed, probably due to dehydration during the photographing. CoOxHyUniformly supported on BiVO4Surface, appearing as a sheet-like morphology.
Referring to FIG. 7, CoPi/BiVO4Faraday junction photoelectrode, CoOxHy/BiVO4The solar charging device composed of the Faraday junction photoelectrode and the counter electrode carbon cloth responds to alternating currents of illumination and dark states under the condition of no external voltage. Upon illumination, the semiconductor BiVO4The generated photogenerated holes are stored in energy storage materials CoPi and CoOxHyAnd the photo-generated electrons are transferred to the carbon cloth of the counter electrode through an external circuit to complete the photo-charging process of the device. In the dark state, the device is connected with a load through an external circuit, and electrons and holes are compounded in the external circuit to complete the dark discharge process of the device. In addition, CoPi/BiVO4The current of the solar charging device assembled by the Faraday junction photoelectrode is obviously larger than that of CoOxHy/BiVO4A faraday junction photoelectrode.
Referring to FIG. 8, CoPi/BiVO4Faraday junction photoelectrode, CoOxHy/BiVO4And the voltage response of a solar charging device consisting of the Faraday junction photoelectrode and the counter electrode carbon cloth under the alternation of light charging and dark state discharging. After photo-charging, the device voltage becomes small, and the photo-state voltage after charging is close to 0: (Close to the equilibrium state), the dark state voltage is the maximum (the voltage at this time is the output voltage of the device) after the light is turned off, and the discharge voltage is reduced along with the dark state discharge process. As can be seen from the figure, CoPi/BiVO4The output voltage (0.88V) of the solar charging device assembled by the Faraday junction photoelectrode is obviously larger than CoOxHy/BiVO4Faraday junction photoelectrode (0.35V).
Claims (4)
1. CoPi/BiVO for high-performance solar charging device4A Faraday electrode material characterized in that a semiconductor BiVO is loaded with CoPi by an electrodeposition method4Surface as CoPi/BiVO4A faraday junction photoelectrode.
2. CoPi/BiVO according to claim 14The preparation method of the Faraday photoelectrode material is characterized by comprising the following steps:
step (1) of preparing BiVO4A photo-anode;
step (2), preparing an electrodeposition solution: 0.5mM Co (NO)3)2Dissolving in 100mL of 1M potassium phosphate buffer solution having pH 7 to prepare an electrodeposition solution;
and (3) depositing a CoPi film by three electrodes: using an electrochemical workstation of Shanghai Chenghua CHI 760e to convert the BiVO obtained in the step (1)4As a working electrode, a silver/silver chloride electrode as a reference electrode, a platinum sheet as a counter electrode, and the solution in the step (2) as an electrolyte; setting the potential to be 1.1Vvs. Ag/AgCl by using the current-time mode of the electrochemical workstation, and when the deposited electric quantity reaches 20mC/cm2Stopping deposition to obtain CoPi/BiVO4Faraday junction photoelectrode material.
3. The method of claim 2, wherein the step (1) comprises the steps of:
(11) a metallic Bi layer is first deposited on an FTO substrate, and 20mM Bi (NO) is added3)3·5H2Dissolving O in 100mL of ethylene glycol to prepare an electrodeposition solution;
(12) using FTO as a working electrode, a silver/silver chloride electrode as a reference electrode, and a platinum sheet as a counter electrode; the solution in the step (11) is used as electrolyte, and the potential is set to be-1.8V vs. Ag/AgCl by utilizing the current-time mode of an electrochemical workstation; the total electric deposition capacity is 300mC/cm2Then washing the metal Bi film by using ethanol and drying the metal Bi film;
(13) then 0.1mL of 150mM VO (acac)2The DMSO solution is dripped on the surface of the metal Bi film prepared in the step (12) and completely covers the metal Bi film;
(14) then putting the sample obtained in the step (13) into a muffle furnace, and calcining the sample in air at 450 ℃ for 2 hours at a heating rate of 2 ℃/min; in a muffle furnace, the metals Bi and VO2+Oxidized and reacted with each other to generate BiVO4A sample;
(15) finally, BiVO obtained by the step (14)4The sample was immersed in 1M NaOH solution for 30 minutes to remove the residual by-product V2O5Obtaining the BiVO4And a photo-anode.
4. CoPi/BiVO according to claim 14The application of the Faraday electrode material in a high-performance solar charging device is characterized in that the solar charging device comprises CoPi/BiVO4The two-port device comprises a Faraday junction photoelectrode and a counter electrode carbon cloth, wherein an electrolyte, namely 1M potassium phosphate buffer solution, is filled between the two ports, and the two electrodes are connected through an external circuit to construct a two-port device.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101430971A (en) * | 2008-12-15 | 2009-05-13 | 沈阳工大恒晟鑫源机械制造有限公司 | Solar cell board |
| CN103000386A (en) * | 2011-09-15 | 2013-03-27 | 海洋王照明科技股份有限公司 | Super hybrid capacitor and manufacturing method thereof |
| CN104711627A (en) * | 2013-12-13 | 2015-06-17 | 中国科学院大连化学物理研究所 | Method for preparing hydrogen through photoanode-photovoltaic battery coupled dual-illumination fully-photic-driven decomposition of water |
| US20150361566A1 (en) * | 2014-06-16 | 2015-12-17 | Wisconsin Alumni Research Foundation | Synthesis of high-surface-area nanoporous bivo4 electrodes |
| WO2016136374A1 (en) * | 2015-02-26 | 2016-09-01 | 国立研究開発法人科学技術振興機構 | Photocatalyst structure and photocell |
| CN106898496A (en) * | 2017-04-21 | 2017-06-27 | 扬州大学 | The preparation method and application of the bullet-shaped cobalt phosphate nickel ammonium particulate with multilayer scale |
| WO2018001051A1 (en) * | 2016-06-27 | 2018-01-04 | 中国科学院金属研究所 | Design method for energy storage device integrated photoelectrochomical water decomposition battery |
| JP2019164986A (en) * | 2018-03-15 | 2019-09-26 | 株式会社リコー | Positive electrode, nonaqueous power storage element and coating liquid for positive electrode mixture material |
| CN112266045A (en) * | 2020-09-21 | 2021-01-26 | 华南理工大学 | Photoanode for retarding corrosion in photoelectrocatalysis wastewater treatment process by utilizing amorphous cobalt phosphate Co-Pi and preparation method and application thereof |
| CN112382509A (en) * | 2020-09-28 | 2021-02-19 | 南京大学 | Low-cost two-port solar rechargeable device and preparation method thereof |
-
2021
- 2021-09-30 CN CN202111159804.2A patent/CN113990675B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101430971A (en) * | 2008-12-15 | 2009-05-13 | 沈阳工大恒晟鑫源机械制造有限公司 | Solar cell board |
| CN103000386A (en) * | 2011-09-15 | 2013-03-27 | 海洋王照明科技股份有限公司 | Super hybrid capacitor and manufacturing method thereof |
| CN104711627A (en) * | 2013-12-13 | 2015-06-17 | 中国科学院大连化学物理研究所 | Method for preparing hydrogen through photoanode-photovoltaic battery coupled dual-illumination fully-photic-driven decomposition of water |
| US20150361566A1 (en) * | 2014-06-16 | 2015-12-17 | Wisconsin Alumni Research Foundation | Synthesis of high-surface-area nanoporous bivo4 electrodes |
| WO2016136374A1 (en) * | 2015-02-26 | 2016-09-01 | 国立研究開発法人科学技術振興機構 | Photocatalyst structure and photocell |
| WO2018001051A1 (en) * | 2016-06-27 | 2018-01-04 | 中国科学院金属研究所 | Design method for energy storage device integrated photoelectrochomical water decomposition battery |
| CN106898496A (en) * | 2017-04-21 | 2017-06-27 | 扬州大学 | The preparation method and application of the bullet-shaped cobalt phosphate nickel ammonium particulate with multilayer scale |
| JP2019164986A (en) * | 2018-03-15 | 2019-09-26 | 株式会社リコー | Positive electrode, nonaqueous power storage element and coating liquid for positive electrode mixture material |
| CN112266045A (en) * | 2020-09-21 | 2021-01-26 | 华南理工大学 | Photoanode for retarding corrosion in photoelectrocatalysis wastewater treatment process by utilizing amorphous cobalt phosphate Co-Pi and preparation method and application thereof |
| CN112382509A (en) * | 2020-09-28 | 2021-02-19 | 南京大学 | Low-cost two-port solar rechargeable device and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| YIMENG MA ET.AL: "Photoinduced Absorption Spectroscopy of CoPi on BiVO4:The Function of CoPi during Water Oxidation", 《ADV. FUNCT. MATER》 * |
| 朱凯健等: "光电催化材料在太阳能分解水方面的应用研究进展", 《中国材料进展》 * |
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