CN113990669A - Preparation method of high-voltage-resistance solid tantalum electrolytic capacitor - Google Patents
Preparation method of high-voltage-resistance solid tantalum electrolytic capacitor Download PDFInfo
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- CN113990669A CN113990669A CN202111276550.2A CN202111276550A CN113990669A CN 113990669 A CN113990669 A CN 113990669A CN 202111276550 A CN202111276550 A CN 202111276550A CN 113990669 A CN113990669 A CN 113990669A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G2009/05—Electrodes or formation of dielectric layers thereon characterised by their structure consisting of tantalum, niobium, or sintered material; Combinations of such electrodes with solid semiconductive electrolytes, e.g. manganese dioxide
Abstract
The invention discloses a preparation method of a high-voltage-resistance solid tantalum electrolytic capacitor, which comprises the following steps: pressing and molding tantalum powder according to a set shape and sintering the tantalum powder into a tantalum block; performing multi-stage energization on the sintered tantalum block to form an anode tantalum core which is provided with dielectric layers with different inner and outer layer thicknesses and has an outer layer thickness larger than an inner layer thickness; and carrying out negative polarization treatment on the anode tantalum block, leading out a cathode through graphite and silver paste, and then packaging to prepare the high-voltage-resistance solid electrolyte tantalum capacitor. The electrolyte containing weak acid salt is used as the energizing forming liquid to energize the tantalum block in multiple stages, a dielectric layer with higher thickness is formed on the outer surface of the tantalum block, the voltage-resistant characteristic of the manufactured capacitor is greatly improved on the premise that the volume is not increased and the capacity is not greatly reduced, compared with single-stage once energizing, the capacity of the manufactured capacitor is slightly smaller than 1% -15%, and loss tangent, equivalent series resistance and electric leakage are not obviously abnormal.
Description
Technical Field
The invention relates to the field of tantalum electrolytic capacitors, in particular to a preparation method of a high-voltage-resistance solid tantalum electrolytic capacitor.
Background
The capacitor is one of electronic elements widely used in electronic equipment, and is widely applied to aspects of blocking AC, coupling, bypassing, filtering, energy conversion and the like in a circuit. Due to the volumetric efficiency, reliability and process compatibility of electrolytic capacitors (e.g., tantalum capacitors), their use in circuit design is increasing, and their reliability is also becoming more and more demanding.
High voltage is applied to the solid sheet tantalum capacitor, and a high electric field is formed inside the solid sheet tantalum capacitor, so that the solid sheet tantalum capacitor is easy to break down locally, and the solid sheet tantalum capacitor is easy to fail, namely, the solid sheet tantalum capacitor is frequently called 'field failure'. During dissection of failed products, it was found that the breakdown sites were mostly concentrated at the core surface. In order to improve the reliability of the high-voltage solid tantalum capacitor, a currently common method is to de-rate the high-voltage solid tantalum capacitor, but this not only increases the cost, but also affects the application range of the high-voltage solid tantalum capacitor.
In view of the above, the present invention is particularly proposed.
Disclosure of Invention
The invention aims to provide a preparation method of a high-voltage-resistance solid tantalum electrolytic capacitor, which can solve the problem of insufficient voltage resistance of the tantalum capacitor on the premise of small capacity loss.
The purpose of the invention is realized by the following technical scheme:
the embodiment of the invention provides a preparation method of a high-voltage-resistance solid tantalum electrolytic capacitor, which comprises the steps of pressing and molding tantalum powder according to a set shape and sintering the tantalum powder into a tantalum block;
performing multi-stage energization on the sintered tantalum block to form an anode tantalum core which is provided with dielectric layers with different inner and outer layer thicknesses and has an outer layer thickness larger than an inner layer thickness;
and carrying out negative polarization treatment on the anode tantalum block, leading out a cathode through graphite and silver paste, and then packaging to prepare the high-voltage-resistance solid electrolyte tantalum capacitor.
Compared with the prior art, the preparation method of the high-voltage-resistance solid tantalum electrolytic capacitor provided by the invention has the beneficial effects that:
the sintered tantalum block is energized in stages to form an anode tantalum core which has an outer layer thickness larger than an inner layer thickness and has dielectric layers with different inner and outer layer thicknesses, and the thickness of an oxide film on the outer surface of the tantalum core is increased on the premise of not changing the thickness of the inner dielectric layer, so that the voltage withstanding characteristic of the capacitor is improved, and the failure probability of the capacitor caused by voltage breakdown is reduced; and the secondary formation does not significantly reduce the product capacity. By adopting the capacitor, the breakdown voltage of a product can be improved on the basis of the original design.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a flow chart of a method for manufacturing a high withstand voltage solid tantalum electrolytic capacitor according to an embodiment of the present invention.
Detailed Description
The technical scheme in the embodiment of the invention is clearly and completely described below by combining the specific content of the invention; it is to be understood that the described embodiments are merely exemplary of the invention, and are not intended to limit the invention to the particular forms disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The terms that may be used herein are first described as follows:
the term "and/or" means that either or both can be achieved, for example, X and/or Y means that both cases include "X" or "Y" as well as three cases including "X and Y".
The terms "comprising," "including," "containing," "having," or other similar terms of meaning should be construed as non-exclusive inclusions. For example: including a feature (e.g., material, component, ingredient, carrier, formulation, material, dimension, part, component, mechanism, device, process, procedure, method, reaction condition, processing condition, parameter, algorithm, signal, data, product, or article of manufacture), is to be construed as including not only the particular feature explicitly listed but also other features not explicitly listed as such which are known in the art.
The term "consisting of … …" is meant to exclude any technical feature elements not explicitly listed. If used in a claim, the term shall render the claim closed except for the inclusion of the technical features that are expressly listed except for the conventional impurities associated therewith. If the term occurs in only one clause of the claims, it is defined only to the elements explicitly recited in that clause, and elements recited in other clauses are not excluded from the overall claims.
The term "parts by mass" is intended to indicate a mass ratio relationship between a plurality of components, for example: if X component is X parts by mass and Y component is Y parts by mass, the mass ratio of the X component to the Y component is X: Y; 1 part by mass may represent any mass, for example: 1 part by mass may be expressed as 1kg or 3.1415926 kg. The sum of the parts by mass of all the components is not necessarily 100 parts, and may be more than 100 parts, less than 100 parts, or equal to 100 parts. Parts, ratios and percentages described herein are by mass unless otherwise indicated.
Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "secured," etc., are to be construed broadly, as for example: can be fixedly connected, can also be detachably connected or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms herein can be understood by those of ordinary skill in the art as appropriate.
When concentrations, temperatures, pressures, dimensions, or other parameters are expressed as ranges of values, the ranges are to be understood as specifically disclosing all ranges formed from any pair of upper, lower, and preferred values within the range, regardless of whether ranges are explicitly recited; for example, if a numerical range of "2 ~ 8" is recited, then the numerical range should be interpreted to include ranges of "2 ~ 7", "2 ~ 6", "5 ~ 7", "3 ~ 4 and 6 ~ 7", "3 ~ 5 and 7", "2 and 5 ~ 7", and the like. Unless otherwise indicated, the numerical ranges recited herein include both the endpoints thereof and all integers and fractions within the numerical range.
The terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in an orientation or positional relationship that is indicated based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description only, and are not intended to imply or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting herein.
The method for manufacturing the high withstand voltage solid tantalum electrolytic capacitor according to the present invention will be described in detail below. Details which are not described in detail in the embodiments of the invention belong to the prior art which is known to the person skilled in the art. Those not specifically mentioned in the examples of the present invention were carried out according to the conventional conditions in the art or conditions suggested by the manufacturer. The reagents or instruments used in the examples of the present invention are not specified by manufacturers, and are all conventional products available by commercial purchase.
As shown in fig. 1, an embodiment of the present invention provides a method for manufacturing a high withstand voltage solid tantalum electrolytic capacitor, which can solve the problem of insufficient withstand voltage capability of the existing tantalum capacitor with a small capacity loss, and the method includes the following steps:
pressing and molding tantalum powder according to a set shape and sintering the tantalum powder into a tantalum block;
performing multi-stage energization on the sintered tantalum block to form an anode tantalum core which is provided with dielectric layers with different inner and outer layer thicknesses and has an outer layer thickness larger than an inner layer thickness;
and carrying out negative polarization treatment on the anode tantalum block, leading out a cathode through graphite and silver paste, and then packaging to prepare the high-voltage-resistance solid electrolyte tantalum capacitor.
In the above method, the step of energizing the sintered tantalum block by the following steps comprises:
step 21) placing the sintered tantalum block in the acidic forming liquid A, introducing a forming voltage, keeping the constant voltage for 1-6 h after the forming voltage is increased to a design voltage, and keeping the current density of 10-100 mA/g in the boosting process;
step 22) boiling and washing the tantalum block treated in the step 21 in deionized water at 100 ℃ for 10-120 min;
step 23) placing the tantalum block boiled in the step 22 in an acid forming liquid B, applying a voltage 20-300V higher than a design voltage, and keeping the constant voltage for 5-600 s;
step 24) placing the tantalum block treated in the step 23 in deionized water at 100 ℃ for boiling and washing for 2 times, wherein the boiling and washing time is 10-120 min each time, and placing the tantalum block in an oven for heat treatment after boiling and washing;
and 25) supplementing the tantalum block subjected to heat treatment in the acidic forming liquid A used in the step 21 for 0.5-4 h at a designed voltage, and completing the phased energization of the sintered tantalum block.
In the method, the acidic forming liquid A adopts an acidic electrolyte composed of an acidic compound and a solvent; preferably, the acidic compound is any one or more of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and boric acid; the solvent is any one of deionized water and ethylene glycol or a mixture of the deionized water and the ethylene glycol. The conductivity of the acidic forming liquid A can be adjusted to a stable value at 40 ℃, and the range of the conductivity is 0.1mS/cm to 50 mS/cm.
The acidic forming liquid B adopts weak acid salt electrolyte solution; preferably, the weak acid salt electrolyte solution is any one or more of ammonium salts or alkali salts of formic acid, acetic acid, boric acid, borate, oxalic acid, lactic acid and carbonic acid. The conductivity of the acidic forming solution B can be adjusted to a stable value at 40 ℃, optionally in the range of 0.1mS/cm to about 50 mS/cm.
In the step 24 of the method, the heat treatment temperature of the tantalum block in the oven is 280-450 ℃, and the treatment time is 5-60 min.
In the above method, the cathode comprises a manganese dioxide cathode and/or an electrically conductive polymer cathode.
In the method, the packaging mode adopts any one of metal shell packaging, ceramic shell packaging, mold pressing plastic packaging and electrostatic coating packaging.
Preferably, the metal used for the metal housing package includes: any one of copper, silver, gold, and tantalum.
Preferably, the material for mold pressing and plastic packaging is thermosetting resin.
In conclusion, according to the preparation method provided by the embodiment of the invention, the secondary formation operation of the weak acid salt is added after the tantalum core is conventionally formed, and the thickness of the oxide film on the outer surface of the tantalum core is increased on the premise of not changing the thickness of the internal dielectric layer, so that the voltage withstanding property of the capacitor is improved, and the failure probability of the capacitor caused by voltage breakdown is reduced; and the secondary formation can not greatly reduce the capacity of the finally manufactured capacitor, and the solid tantalum electrolytic capacitor manufactured by the method can improve the breakdown voltage of the product on the basis of the original design.
In order to more clearly show the technical solutions and the technical effects provided by the present invention, the following detailed description is provided with specific examples of the method for manufacturing the high withstand voltage solid tantalum electrolytic capacitor provided by the embodiments of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a method for manufacturing a high withstand voltage solid tantalum electrolytic capacitor, including the following steps:
pressing and molding tantalum powder according to a certain shape and sintering into tantalum blocks;
performing multi-stage energization on the sintered tantalum block to form an anode tantalum core with a medium layer with different thicknesses, wherein the medium layer is thick at the outer layer and thin at the inner layer;
and (3) cathodically treating the anode tantalum block, leading out a cathode through graphite and silver paste, and then packaging to prepare the high-voltage-resistance solid tantalum electrolytic capacitor.
In the method, the staged energization is mainly divided into three sections:
the first stage is as follows: placing the sintered tantalum block in the acidic forming liquid A, introducing a forming voltage, and keeping the voltage constant for 1-4 hours after the forming voltage is increased to a design voltage; placing the treated tantalum block in deionized water at 100 ℃ for boiling and washing for 10-120 min;
and a second stage: placing the treated tantalum block in an acid forming liquid B, applying a constant voltage 20-300V higher than the design voltage, and keeping for 5-600 s; placing the treated tantalum block in deionized water at 100 ℃ for boiling and washing for 2 times, wherein the boiling and washing time is 10-120 min each time, and placing the tantalum block in an oven for heat treatment after boiling and washing;
and finally, the processed tantalum block is subjected to constant voltage compensation for 0.5-4 h in the acidic forming liquid A in the first stage at a designed voltage, and the anode tantalum core with the medium layer with the different thicknesses, which is thick at the outer layer and thin at the inner layer, is prepared.
In the above step energization, the acidic forming liquid a used in the first step is an acidic electrolyte composed of an acidic mixture and a solvent, for example: the acid mixture is one or more of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, boric acid, etc., and the solvent is one or a mixture of deionized water and ethylene glycol. The conductivity of the acid electrolyte is about 0.1-100 mS/cm at 40 ℃, and preferably 0.5-20 mS/cm.
The acidic forming liquid B used in the second stage is a weak acid salt electrolyte, for example, one or more of ammonium salts or alkali metal salts (e.g., sodium, potassium, etc.) of formic acid, acetic acid, boric acid, oxalic acid, lactic acid, carbonic acid, etc., and the conductivity of the weak acid salt electrolyte can be adjusted to a stable value at 40 ℃, preferably in the range of 0.1mS/cm to about 50 mS/cm.
And after each section of forming stage is finished, the residual electrolyte can be removed by using the boiling and washing of the deionized water, so that the influence among the forming stages is avoided.
In the method, a capacitor cathode layer is formed by subjecting an anode tantalum core to a cathodic polarization treatment. The cathode layer material can be one or two of manganese dioxide and conductive polymer.
According to the preparation method, the tantalum block is energized through the staged forming process, particularly the second-stage forming process using the weak acid salt electrolyte as the energizing forming liquid is adopted, a thicker dielectric layer is formed on the outer layer of the tantalum block, the voltage-resistant characteristic of the capacitor is ensured, the failure phenomenon caused by surface breakdown of the product is effectively reduced, the reliability of the product is improved, and the service life of the product is prolonged.
Examples
As shown in fig. 1, in this embodiment, the preparation method of the present invention is described by taking an E-shell tantalum electrolytic capacitor product of 16V and 150 μ F as an example, and includes the following steps:
firstly, tantalum powder with specific volume of 32000 mu F.V/g and 3 percent (mass ratio) of binder are mixed uniformly, the powder is pressed into an anode sample after being dried, the sample size is 3.5 multiplied by 3.3, the weight is 228mg, and the tantalum block is obtained by sintering and molding at 1450 ℃;
the forming process adopts a three-stage forming process:
the first stage, placing tantalum block in phosphoric acid solution (volume concentration) of 1 ‰ at 85 deg.C, heating to 48V at current density of 50mA/g after temperature is constant, maintaining constant pressure for 2 hr, and then boiling with deionized water for 30 min;
in the second stage, the treated tantalum block is placed in boric acid/sodium borate solution with the conductivity of 5mS/cm at the temperature of 40 ℃, 90V voltage is applied for 5min, and then the tantalum block is boiled and washed twice by deionized water, wherein the time duration of each time is 30 min;
and (3) putting the treated tantalum block into a 350 ℃ oven for heat treatment for 10min, and then performing a third-stage complementary formation process in the acidic formation liquid A used in the first stage, wherein the design voltage of the first stage is used for keeping the voltage constant for 2h, so that the anode tantalum core is prepared.
Performing cathodic treatment on the formed anode tantalum core, repeatedly soaking the anode tantalum core into a 1.30g/mL manganese nitrate solution for 10 times, supplementing the anode tantalum core with half of the energizing voltage of the first stage for 20min after the treatment, soaking the anode tantalum core into the 1.70g/mL manganese nitrate solution for 6 times, and supplementing the anode tantalum core with half of the energizing voltage of the first stage for 10 min;
and sequentially coating a graphite layer and a silver paste layer on the anode tantalum core forming the cathode layer, and then carrying out subsequent assembling, molding, printing, trimming and screening according to the flow of the figure 1 to obtain the finished high-voltage-resistant solid tantalum capacitor.
In conclusion, the electrolyte containing the weak acid salt is used as the energizing forming liquid to energize the tantalum block in multiple stages, the dielectric layer with higher thickness is formed on the outer surface of the tantalum block, the voltage withstanding property of the manufactured capacitor is greatly improved, compared with the capacitor energized in one stage, the capacitor manufactured by the method is slightly smaller than 1% -15%, and the loss tangent, the equivalent series resistance and the electric leakage are not obviously abnormal.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims. The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Claims (10)
1. A preparation method of a high-voltage-resistance solid tantalum electrolytic capacitor is characterized by comprising the following steps:
pressing and molding tantalum powder according to a set shape and sintering the tantalum powder into a tantalum block;
performing multi-stage energization on the sintered tantalum block to form an anode tantalum core which is provided with dielectric layers with different inner and outer layer thicknesses and has an outer layer thickness larger than an inner layer thickness;
and carrying out negative polarization treatment on the anode tantalum block, leading out a cathode through graphite and silver paste, and then packaging to prepare the high-voltage-resistance solid electrolyte tantalum capacitor.
2. The method for producing a high withstand voltage solid electrolyte tantalum capacitor according to claim 1, wherein the tantalum block after sintering is energized in stages by:
step 21) placing the sintered tantalum block in the acidic forming liquid A, introducing a forming voltage, keeping the constant voltage for 1-6 h after the forming voltage is increased to a design voltage, and keeping the current density of 10-100 mA/g in the boosting process;
step 22) boiling and washing the tantalum block treated in the step 21 in deionized water at 100 ℃ for 10-120 min;
step 23) placing the tantalum block boiled in the step 22 in an acid forming liquid B, applying a voltage 20-300V higher than a design voltage, and keeping the constant voltage for 5-600 s;
step 24) placing the tantalum block treated in the step 23 in deionized water at 100 ℃ for boiling and washing for 2 times, wherein the boiling and washing time is 10-120 min each time, and placing the tantalum block in an oven for heat treatment after boiling and washing;
and 25) supplementing the tantalum block subjected to heat treatment in the acidic forming liquid A used in the step 21 for 0.5-4 h at a designed voltage, and completing the phased energization of the sintered tantalum block.
3. The method for producing a high withstand voltage solid electrolyte tantalum capacitor according to claim 2, wherein said acidic forming liquid a employs an acidic salt electrolyte composed of an acidic compound and a solvent, and the conductivity of the weak acid salt electrolyte is adjusted to a stable value at 40 ℃, and the conductivity ranges from 0.1mS/cm to 50 mS/cm;
and the acidic forming solution B adopts weak acid salt electrolyte solution.
4. The method for manufacturing a high withstand voltage solid electrolyte tantalum capacitor according to claim 3, wherein the acidic compound is any one or more of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid and boric acid;
the solvent is any one of deionized water and ethylene glycol or a mixture of the deionized water and the ethylene glycol.
5. The method for manufacturing a high withstand voltage solid electrolyte tantalum capacitor according to claim 3, wherein the weak acid salt electrolyte solution is any one or more of ammonium salts or alkali salts of formic acid, acetic acid, boric acid, borate, oxalic acid, lactic acid, and carbonic acid.
6. The method for manufacturing a high withstand voltage solid electrolyte tantalum capacitor according to any one of claims 2 to 5, wherein in the step 24, the heat treatment temperature of the tantalum block in the oven is 280 to 450 ℃ and the treatment time is 5 to 60 min.
7. The method for producing a high withstand voltage solid electrolyte tantalum capacitor according to any one of claims 1 to 5, wherein said cathode comprises a manganese dioxide cathode and/or a conductive polymer cathode.
8. The method for manufacturing a high withstand voltage solid electrolyte tantalum capacitor according to any one of claims 1 to 5, wherein the packaging manner is any one of metal shell packaging, ceramic shell packaging, mold pressing plastic packaging and electrostatic coating packaging.
9. The method for producing a high withstand voltage solid electrolyte tantalum capacitor according to any one of claims 1 to 5, wherein the metal for the metal can encapsulation comprises: any one of copper, silver, gold, and tantalum.
10. The method for manufacturing a high withstand voltage solid electrolyte tantalum capacitor according to any one of claims 1 to 5, wherein the material for mold pressing and plastic sealing is a thermosetting resin.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1925075A (en) * | 2005-08-29 | 2007-03-07 | 三洋电机株式会社 | Solid electrolytic capacitor element, manufacturing method of solid electrolytic capacitor element and solid electrolytic capacitor |
| US20130182370A1 (en) * | 2011-09-28 | 2013-07-18 | Sanyo Electric Co., Ltd. | Capacitor |
| US20140313638A1 (en) * | 2011-11-18 | 2014-10-23 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| CN111696786A (en) * | 2020-05-19 | 2020-09-22 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1925075A (en) * | 2005-08-29 | 2007-03-07 | 三洋电机株式会社 | Solid electrolytic capacitor element, manufacturing method of solid electrolytic capacitor element and solid electrolytic capacitor |
| US20130182370A1 (en) * | 2011-09-28 | 2013-07-18 | Sanyo Electric Co., Ltd. | Capacitor |
| US20140313638A1 (en) * | 2011-11-18 | 2014-10-23 | Sanyo Electric Co., Ltd. | Solid electrolytic capacitor and method for manufacturing same |
| CN111696786A (en) * | 2020-05-19 | 2020-09-22 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
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