CN113981374A - Preparation process of high damage threshold optical film - Google Patents
Preparation process of high damage threshold optical film Download PDFInfo
- Publication number
- CN113981374A CN113981374A CN202111261909.9A CN202111261909A CN113981374A CN 113981374 A CN113981374 A CN 113981374A CN 202111261909 A CN202111261909 A CN 202111261909A CN 113981374 A CN113981374 A CN 113981374A
- Authority
- CN
- China
- Prior art keywords
- film
- damage threshold
- optical film
- high damage
- following
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/5813—Thermal treatment using lasers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/582—Thermal treatment using electron bombardment
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a preparation process of an optical film with a high damage threshold, which comprises the following steps: the method comprises the following steps: the film material is preferred; step two: designing a membrane system; step three: ion beam assist; step four: and (5) carrying out subsequent treatment. The invention has the following beneficial effects: the invention adopts the processes of material optimization, orthogonal experiment optimization, electric field intensity design, subsequent treatment and the like, realizes the preparation of the laser film with high damage threshold, the optical performance of the prepared film meets the actual requirement, and the laser damage threshold can reach 10-20J/cm 2; the film prepared by the process has excellent optical performance, small absorption and low loss; through material optimization and preparation process optimization, the film has small stress and is not easy to fall off; the adhesive force is good, and the film-substrate bonding performance meets the national standard requirement; the laser damage threshold is high, and is about 50-100% higher than that of the film prepared by the conventional process.
Description
Technical Field
The invention relates to a preparation process of an optical film, in particular to a preparation process of an optical film with a high damage threshold.
Background
In the field of laser systems, a high damage threshold laser film is one of key elements in a strong laser system and is also one of key factors in the design of a large laser device, and the damage threshold and the damage characteristic of the high damage threshold laser film are one of important bottlenecks limiting the further development of a strong laser technology and important factors influencing the stability and the service life of the laser system. The conventional process method and the conventional technology are difficult to prepare the film with strong laser resistance and difficult to prepare the film with optical performance compatible with laser damage resistance.
Disclosure of Invention
The present invention is directed to a process for preparing an optical thin film with a high damage threshold, so as to solve the problems mentioned in the background art.
In order to solve the technical problems, the invention provides the following technical scheme: a preparation process of an optical film with a high damage threshold is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: the film material is preferred;
step two: designing a membrane system;
step three: ion beam assist;
step four: and (5) carrying out subsequent treatment.
The membrane material in the first step preferably comprises membrane material physical and chemical analysis, single-factor experiment and orthogonal experiment.
And the film system design in the second step comprises optical performance analysis and electric field intensity analysis.
The ion beam assistance in the third step comprises preparation method design, parameter control experiment and repeatability experiment.
The subsequent treatment in the fourth step comprises laser irradiation treatment, electron beam treatment and annealing treatment.
The subsequent processing in step four further comprises high-intensity electric field processing.
Compared with the prior art, the invention has the following beneficial effects: the invention adopts the processes of material optimization, orthogonal experiment optimization, electric field intensity design, subsequent treatment and the like, realizes the preparation of the laser film with high damage threshold, the optical performance of the prepared film meets the actual requirement, and the laser damage threshold can reach 10-20J/cm 2;
the film prepared by the process has excellent optical performance, small absorption and low loss; through material optimization and preparation process optimization, the film has small stress and is not easy to fall off; the adhesive force is good, and the film-substrate bonding performance meets the national standard requirement; the laser damage threshold is high, and is about 50-100% higher than that of the film prepared by the conventional process.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, and are not intended to limit the invention. In the drawings:
FIG. 1 is a flow chart of a process for making a high damage threshold optical film according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides the technical scheme that: a preparation process of an optical film with a high damage threshold value comprises the following steps:
the method comprises the following steps: the film material is preferred;
step two: designing a membrane system;
step three: ion beam assist;
step four: and (5) carrying out subsequent treatment.
The membrane material in the step one preferably comprises membrane material physical and chemical analysis, single-factor experiment and orthogonal experiment.
And the film system design in the second step comprises optical performance analysis and electric field intensity analysis.
The ion beam assistance in the third step comprises preparation method design, parameter control experiment and repeatability experiment.
The subsequent treatment in the fourth step includes laser irradiation treatment, electron beam treatment and annealing treatment.
The subsequent processing in step four also includes high-intensity electric field processing.
The following are the results of laser damage thresholds achieved by the various methods initially studied
Damage threshold (J/cm2) for various dielectric films in different processes
It can be seen that not all thin film materials can reach extremely high laser damage threshold, wherein after process optimization and post-plating treatment, only the laser damage threshold of the SiO2 and HfO2 thin films is high, and therefore, further analysis and research are carried out on the two materials. Further research shows that the laser damage threshold of the film can be improved by adopting a low-speed deposition process, so that the deposition rate of silicon oxide and hafnium oxide is reduced to 2-5nm/min, and the results obtained by annealing and pretreatment are as follows: the laser damage threshold of HfO2 is 20.81J/cm2, and the laser damage threshold of SiO2 is 24.67J/cm 2. Because the difference between the refractive indexes of the two materials is large, the two materials can form a basic material system of film system design.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. A preparation process of an optical film with a high damage threshold is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: the film material is preferred;
step two: designing a membrane system;
step three: ion beam assist;
step four: and (5) carrying out subsequent treatment.
2. The process for preparing an optical film with a high damage threshold as claimed in claim 1, wherein: the membrane material in the first step preferably comprises membrane material physical and chemical analysis, single-factor experiment and orthogonal experiment.
3. The process for preparing an optical film with a high damage threshold as claimed in claim 1, wherein: and the film system design in the second step comprises optical performance analysis and electric field intensity analysis.
4. The process for preparing an optical film with a high damage threshold as claimed in claim 1, wherein: the ion beam assistance in the third step comprises preparation method design, parameter control experiment and repeatability experiment.
5. The process for preparing an optical film with a high damage threshold as claimed in claim 1, wherein: the subsequent treatment in the fourth step comprises laser irradiation treatment, electron beam treatment and annealing treatment.
6. The process for preparing an optical film with a high damage threshold as claimed in claim 5, wherein: the subsequent processing in step four further comprises high-intensity electric field processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111261909.9A CN113981374A (en) | 2021-10-28 | 2021-10-28 | Preparation process of high damage threshold optical film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111261909.9A CN113981374A (en) | 2021-10-28 | 2021-10-28 | Preparation process of high damage threshold optical film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113981374A true CN113981374A (en) | 2022-01-28 |
Family
ID=79743296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111261909.9A Pending CN113981374A (en) | 2021-10-28 | 2021-10-28 | Preparation process of high damage threshold optical film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113981374A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110512180A (en) * | 2019-09-11 | 2019-11-29 | 中国矿业大学 | A kind of preparation method of the laser film with high laser damage threshold |
| CN111679347A (en) * | 2019-12-31 | 2020-09-18 | 西南技术物理研究所 | High damage threshold laser film process technology method |
-
2021
- 2021-10-28 CN CN202111261909.9A patent/CN113981374A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110512180A (en) * | 2019-09-11 | 2019-11-29 | 中国矿业大学 | A kind of preparation method of the laser film with high laser damage threshold |
| CN111679347A (en) * | 2019-12-31 | 2020-09-18 | 西南技术物理研究所 | High damage threshold laser film process technology method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU4047500A (en) | Reactive ion beam etching method and a thin film head fabricated using the method | |
| US20110186437A1 (en) | Polymeric Electret Film and Method of Manufacturing the Same | |
| US20100147762A1 (en) | Membrane assemblies and methods of making and using the same | |
| US20200180269A1 (en) | Method for making graphene adhesive film and method for transferring graphene | |
| CN111071985B (en) | Method for firmly fixing metal nano particles by introducing anode aluminum oxide film of sacrificial layer | |
| CN107064107B (en) | A kind of super hydrophobic surface enhancing Raman substrate and preparation method thereof using the preparation of silicon nanometer dielectric material | |
| CN110235285A (en) | The manufacturing method of lithium electrode | |
| CN110364664A (en) | A kind of Water based metal ion secondary battery diaphragm and its preparation method and application | |
| Kim et al. | Contact splitting in dry adhesion and friction: reducing the influence of roughness | |
| CN113981374A (en) | Preparation process of high damage threshold optical film | |
| DE102012110603A1 (en) | Method for separating semiconductor dies by means of a material modification | |
| CN106169552A (en) | Utilize the method that vacuum magnetic-control sputtering technology prepares ceramic membrane at PE membrane surface | |
| CN106756789A (en) | A kind of compound transparent electricity conductive film and preparation method thereof | |
| CN108840329A (en) | A kind of preparation method of the graphene-based ultrathin membrane of independent self-supporting | |
| KR20160133959A (en) | Doping method of graphene based on a supporting layer with ion implantation | |
| CN110600538B (en) | Application of ionic gel in graphene transfer and preparation of graphene transistor, graphene transistor and preparation method of graphene transistor | |
| CN109920723B (en) | Preparation method of self-supporting germanium film and germanium film | |
| CN111229049A (en) | Size-controllable micro-nano pore membrane and preparation method and application thereof | |
| US20170051397A1 (en) | Method for developing a coating having a high light transmission and/or a low light reflection | |
| JP4029620B2 (en) | Laminated body, transparent conductive gas barrier film, and method for producing transparent conductive gas barrier film | |
| CN110921612A (en) | Silicon nanopore structure with variable etching direction and preparation method thereof | |
| CN109835869B (en) | Micro-nano through hole template and preparation method and application thereof | |
| Gao et al. | Surface modification of plasma‐pretreated expanded poly (tetrafluroethylene) films by graft copolymerization | |
| JP2009169335A (en) | Optical film and method for manufacturing the same | |
| DoWELL | C. Elektronenmikroskopische Präparationstechnik |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |