CN113976892A - Manufacturing method of low-residual-stress polycrystalline diamond compact - Google Patents
Manufacturing method of low-residual-stress polycrystalline diamond compact Download PDFInfo
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- CN113976892A CN113976892A CN202111159236.6A CN202111159236A CN113976892A CN 113976892 A CN113976892 A CN 113976892A CN 202111159236 A CN202111159236 A CN 202111159236A CN 113976892 A CN113976892 A CN 113976892A
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- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 159
- 230000007704 transition Effects 0.000 claims abstract description 95
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000002245 particle Substances 0.000 claims abstract description 42
- 239000000956 alloy Substances 0.000 claims abstract description 31
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 31
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 11
- 239000010941 cobalt Substances 0.000 claims abstract description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
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- 238000004806 packaging method and process Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
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- 238000002156 mixing Methods 0.000 abstract description 12
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 8
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F2005/001—Cutting tools, earth boring or grinding tool other than table ware
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
Abstract
The invention discloses a manufacturing method of a low residual stress polycrystalline diamond compact, which is formed by sintering a diamond layer and a transition layer with a hard alloy substrate by using a traditional cubic press under the conditions of the pressure of 5 GPa-10 GPa and the temperature of 1200-1800 ℃; the diamond layer is formed by mixing diamonds with the average particle size of 0.5-100 mu m, the transition layer is formed by mixing tungsten carbide micro powder or tungsten carbide micro powder and at least one of metal cobalt, metal tungsten and diamond micro powder, the micro powder of the transition layer is sequentially paved from small to large according to the particle size or from large to small according to the diamond duty ratio, and at least 2 layers are paved. The polycrystalline diamond compact with low residual stress and high impact toughness for the drilling field is prepared, and the comprehensive performance of the PDC compact is improved. And further improve its impact toughness, reduce the residual stress between diamond layer and the alloy substrate, reduce the delaminating risk of PDC composite piece in order to deal with the geological drilling under more and more complicated geological conditions.
Description
Technical Field
The invention relates to the technical field of preparation of superhard composite materials for drilling and exploitation of petroleum and natural gas, in particular to a method for manufacturing a low-residual-stress polycrystalline diamond compact.
Background
In the drilling and exploitation technology of oil and natural gas, it has been a goal pursued by all customers to improve the service life and mechanical rotation speed of the drill bit and reduce the number of times of drill lifting, wherein the performance of a polycrystalline diamond compact (PDC compact for short) plays a key role. Some of the existing PDC compacts are composed of a polycrystalline diamond layer and a cemented tungsten carbide substrate, and some of them add a transition layer between the polycrystalline diamond layer and the cemented tungsten carbide substrate to reduce residual stress during sintering, but at present, the transition layer is composed of diamond micro powders with different grain sizes or a certain amount of cemented tungsten carbide micro powders or cobalt added thereto. However, since the transition layer is mainly composed of diamond micropowder, the large difference of thermal expansion coefficients between the transition layer and the alloy matrix causes huge residual stress in the sintering process. The great residual stress increases the risk of delamination of the PDC compact in the using process, and is a key failure factor influencing the service life of the PDC compact.
In order to reduce the risk of delamination of PDC compacts during use, profiled compacts are also increasingly being used in some special formations. The special-shaped PDC composite sheet achieves the purposes of improving the impact toughness and improving the interface bonding strength to reduce the risk of delamination by changing the surface shape and the interface shape, but does not change the huge residual stress caused by the difference of the thermal expansion coefficients of two materials in the sintering process of a diamond layer and an alloy layer, and even through a method for eliminating the residual stress through later annealing and the like, the risk of delamination of the interface bonding position in the heated process cannot be thoroughly solved.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method for manufacturing a polycrystalline diamond compact with low residual stress, aiming at the problem that interface delamination is caused when the interface is heated in the using process due to huge residual stress generated at the interface bonding position in the sintering process of the conventional PDC compact.
In order to achieve the purpose, the invention provides the following technical scheme: a method for manufacturing a polycrystalline diamond compact with low residual stress comprises a polycrystalline diamond layer, a transition layer positioned below the polycrystalline diamond layer and a hard alloy layer positioned below the transition layer, wherein the polycrystalline diamond layer, the transition layer and the hard alloy substrate layer are arranged in a layered mode and are mutually permeated, particularly, micro powder particles adopted by the manufacturing method of the transition layer are sequentially paved from small to large or installed according to the volume ratio of diamond, and the micro powder particles are mutually permeated.
A manufacturing method of a low residual stress polycrystalline diamond compact is characterized by comprising the following steps:
the invention discloses a method for manufacturing a low residual stress polycrystalline diamond compact, which comprises the following steps:
and 5, filling the processed inner core into a synthesis block, synthesizing under the conditions of high temperature and high pressure, and sintering and permeating the polycrystalline diamond layer, the transition layer and the hard alloy matrix layer in the inner core under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact.
The size of the micro powder particles of the transition layer in the step 2 is 0.5-100 mu m, the transition layer is divided into at least 2 parts according to the size of the micro powder particles from small to large, at least 2 transition layers are laid according to the size of the micro powder particles from small to large, the number of the transition layers is the same as that of the micro powder, and the total height of the transition layers is 0.3-13 mm.
The volume ratio of the diamond micro powder of the transition layer in the step 2 is 5-95%, the transition layer is divided into at least 2 parts according to the volume ratio of diamond micro powder particles from large to small, at least 2 transition layers are laid according to the volume ratio of the diamond micro powder particles from large to small, the number of the transition layers is the same as that of the micro powder, the total height of the transition layers is 0.3-13mm, and the characteristic particle size of the diamond micro powder in the mixed micro powder is 0.5-50 mu m.
The particle size of the diamond micro powder in the step 1 is 0.5-100 mu m.
The height of the polycrystalline diamond layer in the step 1 is 3.5mm-4.0 mm.
The pressure of the step 5 is 5 GPa-10 GPa, and the temperature is 1200 ℃ to 1800 ℃.
The micro powder of the transition layer is at least one of tungsten carbide and metal cobalt, metal tungsten and diamond micro powder.
The invention discloses a manufacturing method of a low-residual-stress polycrystalline diamond compact, which greatly reduces the residual stress generated at an interface in a sintering process (as shown in figure 6) on the basis of ensuring the high abrasiveness of the original PDC compact, greatly increases the bonding strength between a diamond layer and an alloy substrate, and reduces the risk of delamination between the diamond layer and the alloy substrate in the actual use process. The heat resistance of the PDC composite sheet is greatly improved and the delamination risk is reduced in the process of oil and natural gas exploitation, so that the service life of a single drill bit is greatly prolonged, and the exploitation cost of oil and natural gas is greatly reduced.
Drawings
FIG. 1 is a schematic diagram of the structure of a two-layer transition layer of a low residual stress PDC compact of the present invention.
FIG. 2 is a diagram of an exemplary installation process of an embodiment of a two-layer transition layer.
Fig. 3 is a schematic diagram of a five-layer transition layer structure of a low residual stress PDC compact of the present invention.
FIG. 4 is a diagram of an exemplary installation process of an embodiment of five transition layers.
FIG. 5 is a comparison of the residual stress of a low residual stress PDC compact of the present invention and a conventional PDC compact.
FIG. 6 is a scanning electron micrograph of a low residual stress PDC compact of the present invention.
The diamond cup comprises a hard alloy layer 1, a transition layer 2, a transition layer 201, a transition layer one layer 202, a transition layer two layer 203, a transition layer three layer 204, a transition layer four layer 205, a transition layer five layer 3, a diamond layer 4, a metal bottom cup 5 and a metal cap cup.
Detailed Description
The invention is further described with reference to the accompanying drawings in which:
a method for manufacturing polycrystalline diamond with low residual stress comprises a polycrystalline diamond layer, a hard alloy layer and an intermediate transition layer.
The specific manufacturing method comprises the following steps:
2, mixing tungsten carbide subjected to high-temperature vacuum reduction treatment and at least one of metal cobalt, metal tungsten and diamond micro powder to form micro powder, wherein the characteristic particle size of the micro powder is 0.5-100 microns, the micro powder is loaded into a metal cup and flattened by a tool, the processed micro powder is loaded onto the micro powder processed in the step 1, the height of the micro powder is 0.3-13mm, the layer is a transition layer, the transition layer is paved by at least 2 layers, micro powder particles of each layer can be paved in sequence from small to large in average particle size, or diamond micro powder with a volume ratio smaller and smaller in the mixed micro powder of one or more than two of diamond and tungsten carbide, metal cobalt and metal tungsten is paved in sequence as the transition layer and mutually permeates the transition layer;
and 5, putting the finished inner core into a synthesis block, and synthesizing under the conditions that six-side top pressure is 5 GPa-10 GPa and the temperature is 1200-1800 ℃, so that the polycrystalline diamond layer, the transition layer and the hard alloy substrate layer in the inner core are sintered and infiltrated under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact.
The first implementation mode comprises the following steps:
as shown in fig. 1 and 2, a polycrystalline diamond compact with low residual stress is assembled by assembling a polycrystalline diamond layer 3 in a metal bottom cup 4, putting micro powder formed by mixing tungsten carbide and at least one of metal cobalt, metal tungsten and diamond micro powder into a transition layer 2, putting a hard alloy layer 1, and finally putting a metal cap cup 5 at the upper end of a hard alloy substrate.
The specific assembling process is as follows: firstly, mixing diamond micro powder with the granularity of 0.5-100 mu m, wherein the average characteristic granularity used by the method is 16 mu m, carrying out high-vacuum high-temperature purification treatment, then putting the mixture into a metal cup, and using a tool to grind the micro powder flat or into a structure with steps or a plane structure, wherein the thickness of the micro powder is 3.5 mm; secondly, mixing tungsten carbide subjected to high-temperature vacuum reduction treatment with at least one of metal cobalt, metal tungsten and diamond micropowder to form micropowder, wherein the characteristic particle size of the micropowder is 0.5-50 mu m, the average characteristic particle size used in the invention is 25 mu m, the micropowder is loaded into a metal cup and leveled by a tool, the treated micropowder is loaded into the upper layer of the micropowder treated in the first step, the layer is a transition layer 201 of a transition layer 2, and the laying height of the micropowder is 0.4 mm; on the basis of the previous step, the micro powder formed by mixing tungsten carbide and at least one of metal cobalt, metal tungsten and diamond micro powder after high-temperature vacuum reduction treatment is continuously added, the characteristic particle size of the micro powder is 25-100 mu m, the average characteristic particle size used in the invention is 50 mu m, the laying height of the micro powder is 0.4mm, the layer is a transition layer two layer 202 of a transition layer 2, a tool is used for enabling the polycrystalline diamond layer and the transition layer one layer 201, and the micro powder of the transition layer one layer 201 and the transition layer two layer 202 to mutually permeate, and in the third step, the metal cup is filled with a tungsten carbide alloy substrate which is well purified and then packaged to form a hard alloy layer 1, and the hard alloy layer 1 and the transition layer two layer 202 mutually permeate. Fourthly, performing secondary high-temperature high-vacuum purification treatment on the inner core and performing vacuum packaging; and a fifth step of putting the processed inner core into a synthesis block and synthesizing the inner core under the conditions of 5 GPa-10 GPa and 1200 ℃ to 1800 ℃ on a six-sided pressing, wherein the characteristic pressure of the real-time example is 7GPa and the temperature is 1450 ℃, so that the diamond layer, the transition layer and the hard alloy layer in the inner core are sintered and infiltrated under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact. It can be seen in fig. 4 that the PDC composite sheet synthesized by the present method has a significantly reduced residual stress as compared to the conventional method. And machining the mixture into a finished product after synthesis. The diameter of the PDC composite sheet is 13.44mm, 15.88mm and 19mm, and the total height is 13.2 mm.
The second embodiment:
as shown in fig. 3 and 4, this embodiment specifically discloses a manufacturing method of a low residual stress polycrystalline diamond composite with 5 transition layers, during assembly, a polycrystalline diamond layer 3 is assembled in a metal base cup 4, a mixed micro powder of tungsten carbide and diamond is put into the metal base cup to form a transition layer 2, a hard alloy layer 1 is put into the transition layer, and finally a metal cap cup 5 is put on the upper end of a hard alloy substrate.
The method comprises the following steps of firstly, mixing diamond micro powder with the granularity of 0.5-100 mu m, wherein the average characteristic granularity used by the method is 16 mu m, carrying out high-vacuum high-temperature purification treatment, then, filling the diamond micro powder into a metal cup, and using a tool to grind the micro powder into a flat structure or a plane structure with steps, wherein the thickness of the micro powder filled into the cup is 3.5 mm;
secondly, mixing the tungsten carbide micro powder subjected to high-temperature vacuum reduction treatment with at least one of metal cobalt, metal tungsten and diamond micro powder to form micro powder, wherein the proportion of the tungsten carbide micro powder is 5-95% by volume, the characteristic proportion in the real-time example is 30%, the characteristic granularity of the micro powder is 0.5-50 mu m, the average characteristic granularity used in the invention is 25 mu m, the micro powder is loaded into a metal cup and leveled by a tool, and the height of the micro powder is 1 mm;
thirdly, filling the purified tungsten carbide alloy substrate into the metal cup and then packaging;
fourthly, the assembled three layers of substances become an inner core, and the inner core is subjected to secondary high-temperature high-vacuum purification treatment and vacuum packaging;
and a fifth step of putting the processed inner core into a synthesis block and synthesizing the inner core under the conditions of 5 GPa-10 GPa and 1200 ℃ -1800 ℃ on a six-surface top pressure, wherein the characteristic pressure of the real-time example is 7GPa and the temperature is 1450 ℃, and the three layers in the inner core are sintered and infiltrated under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact. It can be seen in fig. 4 that the PDC composite sheet synthesized by the present method has a significantly reduced residual stress as compared to the conventional method. And machining the mixture into a finished product after synthesis. The diameter of the PDC composite sheet is 13.44mm, 15.88mm and 19mm, and the total height is 13.2 mm.
In the second step, the micropowder used in the transition layer 2 is divided into 5 equal parts according to the size of micropowder particles, and the 5 equal parts are sequentially placed on the surface of the micropowder on the upper layer, so that the micropowder particles are flushed and fully contacted with the upper layer and mutually permeated, and the method specifically comprises the following steps: 2.1, filling micro powder with the granularity of 0.5-5 mu m into the surface of the polycrystalline diamond layer micro powder in the step 1, and using a tool to enable the micro powder with the granularity of 0.5-5 mu m to be fully contacted with the polycrystalline diamond layer micro powder and to mutually permeate to form a transition layer 201 of the transition layer; and 2.2, transferring the micro powder with the particle size of 6-10 microns to the surface of the micro powder, and using a tool to enable the micro powder with the particle size of 6-10 microns and the micro powder with the particle size of 0.5-5 microns to be in full contact and mutually permeate to form a second transition layer 202 of the transition layer. And 2.3, transferring the micro powder with the particle size of 11-20 microns to the surface of the micro powder in the step 2.2, and using a tool to enable the micro powder with the particle size of 11-20 microns and the micro powder with the particle size of 6-10 microns to be in full contact and mutually permeate to form a transition layer three layer 203 of the transition layer. And 2.4, transferring the micro powder with the particle size of 20-35 microns to the surface of the micro powder in the step 2.2, and using a tool to enable the micro powder with the particle size of 20-30 microns and the micro powder with the particle size of 11-20 microns to be in full contact and mutually permeate to form a transition layer four-layer 204 of the transition layer. And 2.5, transferring the micro powder with the particle size of 35-50 microns to the surface of the micro powder in the step 2.2, and using a tool to enable the micro powder with the particle size of 35-50 microns and the micro powder with the particle size of 20-35 microns to be in full contact and mutually permeate to form a transition layer five-layer 205 of the transition layer. In the 2.1-2.5 steps, the thickness of each layer of the 5 layers is 0.2mm, and the total thickness of the transition layer is 1 mm.
The third embodiment is as follows:
as shown in fig. 3 and 4, this embodiment specifically discloses a manufacturing method of a low residual stress polycrystalline diamond composite with 5 transition layers, during assembly, a polycrystalline diamond layer 3 is assembled in a metal base cup 5, a tungsten carbide and diamond mixed micro powder is put into the metal base cup as a transition layer 2, a hard alloy layer 1 is put into the metal base cup, and finally a metal cap cup 6 is put on the upper end of the hard alloy substrate.
The method comprises the following steps of firstly, mixing diamond micro powder with the granularity of 0.5-100 mu m, wherein the average characteristic granularity used by the method is 16 mu m, carrying out high-vacuum high-temperature purification treatment, then, filling the diamond micro powder into a metal cup, and using a tool to grind the micro powder into a flat structure or a plane structure with steps, wherein the thickness of the micro powder filled into the cup is 3.5 mm;
secondly, mixing the tungsten carbide micro powder subjected to high-temperature vacuum reduction treatment with at least one of metal cobalt, metal tungsten and diamond micro powder to form micro powder, wherein the proportion of the diamond micro powder is 5-95% by volume, the characteristic granularity of the diamond micro powder in the mixed micro powder is 0.5-50 mu m, the average characteristic granularity used by the invention is 25 mu m, the micro powder is filled into a metal cup and leveled by a tool, and the height of the micro powder is 1.0 mm;
thirdly, filling the purified tungsten carbide alloy substrate into the metal cup and then packaging;
fourthly, the assembled three layers of substances become an inner core, and the inner core is subjected to secondary high-temperature high-vacuum purification treatment and vacuum packaging;
and a fifth step of putting the processed inner core into a synthesis block and synthesizing the inner core under the conditions of 5 GPa-10 GPa and 1200 ℃ -1800 ℃ on a six-surface top pressure, wherein the characteristic pressure of the real-time example is 7GPa and the temperature is 1450 ℃, and the three layers in the inner core are sintered and infiltrated under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact. It can be seen in fig. 4 that the PDC composite sheet synthesized by the present method has a significantly reduced residual stress as compared to the conventional method. And machining the mixture into a finished product after synthesis. The diameter of the PDC composite sheet is 13.44mm, 15.88mm and 19mm, and the total height is 13.2 mm.
Specifically, in the second step, the micro powder used in the transition layer 2 can be divided into 5 equal parts according to the proportion of the diamond micro powder, and the micro powder is sequentially placed on the surface of the micro powder of the upper layer, specifically: 2.1, filling micro powder with the diamond micro powder accounting for 95% of the volume ratio in the mixed micro powder on the diamond layer 3 micro powder, using a tool to grind the micro powder flat, and mutually permeating the micro powder with the micro powder in the first step to form a transition layer 201 of the transition layer; 2.2, loading the micro powder with the diamond micro powder accounting for 90% of the volume ratio in the mixed micro powder onto the micro powder in the step 2.1, and using a tool to grind the micro powder flat and mutually permeate the micro powder accounting for 95% of the volume ratio to form a second transition layer 202 of the transition layer; 2.3, filling the micropowder of which the diamond micropowder accounts for 85 percent of the volume ratio in the mixed micropowder into the micropowder in the step 2.2, and using a tool to grind the micropowder to be level and mutually permeate the micropowder which accounts for 90 percent of the volume ratio to form a transition layer three-layer 203 of the transition layer; 2.4, filling micro powder with diamond micro powder accounting for 80% of the volume ratio in the mixed micro powder on the micro powder in the step 2.3, and using a tool to grind the micro powder flat, and mutually permeating the micro powder with 85% of the volume ratio to form a transition layer four layer 204 of the transition layer; and 2.5, filling the micro powder with 75% of diamond micro powder by volume ratio in the mixed micro powder on the micro powder in the step 2.4, and using a tool to flush the micro powder and mutually permeate the micro powder with 80% of diamond micro powder by volume ratio to form a transition layer five-layer 205 of the transition layer. In the 2.1-2.5 steps, the thickness of each layer of the 5 layers is 0.2mm, the micro powder of each layer is mutually penetrated, and the total thickness of the transition layer is 1 mm.
In the first embodiment and the second embodiment, the case that the transition layer is two layers and five layers is exemplified, in practice, in the construction process, a laying mode of at least two layers can be adopted, the particles of each layer are arranged from small to large or from large to small, and the particles between each layer are mutually permeated, so that a better transition effect is achieved.
It is to be understood that the described embodiments are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Claims (7)
1. A manufacturing method of a low residual stress polycrystalline diamond compact is characterized by comprising the following steps:
step 1, the mixed diamond micro powder is subjected to high-vacuum high-temperature purification treatment and then is filled into a metal cup, and the micro powder is ground or is ground into a structure with steps or a plane structure, wherein the layer is a polycrystalline diamond layer;
step 2, dividing the micro powder subjected to high-temperature vacuum reduction treatment into at least 2 parts, paving a first layer of micro powder on the micro powder treated in the step 1, carrying out abrasion of the micro powder, fully permeating the micro powder with the micro powder in the first step, paving a second layer of micro powder, carrying out abrasion of the micro powder, carrying out mutual permeation of the micro powder with the paved upper layer of micro powder, and sequentially paving and carrying out abrasion of at least 2 parts of micro powder according to the method to form a transition layer;
step 3, filling the purified tungsten carbide alloy substrate into the metal cup and then packaging the metal cup, wherein the layer is a hard alloy substrate layer;
step 4, forming the assembled three layers of substances into an inner core, and performing secondary high-temperature high-vacuum purification treatment and vacuum packaging on the inner core;
and 5, filling the processed inner core into a synthesis block, synthesizing under the conditions of high temperature and high pressure, and sintering and permeating the polycrystalline diamond layer, the transition layer and the hard alloy matrix layer in the inner core under the conditions of high pressure and high temperature to form the low residual stress polycrystalline diamond compact.
2. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the size of the micro powder particles of the transition layer in the step 2 is 0.5-100 mu m, the transition layer is divided into at least 2 parts according to the size of the micro powder particles from small to large, at least 2 transition layers are laid according to the size of the micro powder particles from small to large, the number of the transition layers is the same as that of the micro powder, and the total height of the transition layers is 0.3-13 mm.
3. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the volume ratio of the diamond micro powder of the transition layer in the step 2 is 5-95%, the transition layer is divided into at least 2 parts according to the volume ratio of diamond micro powder particles from large to small, at least 2 transition layers are laid according to the volume ratio of the diamond micro powder particles from large to small, the number of the transition layers is the same as that of the micro powder, the total height of the transition layers is 0.3-13mm, and the characteristic particle size of the diamond micro powder in the mixed micro powder is 0.5-50 mu m.
4. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the particle size of the diamond micro powder in the step 1 is 0.5-100 mu m.
5. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the height of the polycrystalline diamond layer in the step 1 is 3.5mm-4.0 mm.
6. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the pressure of the step 5 is 5 GPa-10 GPa, and the temperature is 1200 ℃ to 1800 ℃.
7. The method of manufacturing a low residual stress polycrystalline diamond compact of claim 1, wherein: the micro powder of the transition layer is at least one of tungsten carbide and metal cobalt, metal tungsten and diamond micro powder.
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