CN113964630B - Polymer optical waveguide amplifier based on PbS quantum dots and preparation method thereof - Google Patents
Polymer optical waveguide amplifier based on PbS quantum dots and preparation method thereof Download PDFInfo
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- CN113964630B CN113964630B CN202111213492.9A CN202111213492A CN113964630B CN 113964630 B CN113964630 B CN 113964630B CN 202111213492 A CN202111213492 A CN 202111213492A CN 113964630 B CN113964630 B CN 113964630B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 42
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229920000642 polymer Polymers 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000002096 quantum dot Substances 0.000 claims abstract description 54
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000012792 core layer Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 13
- 238000001259 photo etching Methods 0.000 claims description 11
- 238000005253 cladding Methods 0.000 claims description 9
- 239000000084 colloidal system Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 238000000233 ultraviolet lithography Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005485 electric heating Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 3
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 238000004061 bleaching Methods 0.000 abstract description 4
- 239000011162 core material Substances 0.000 description 8
- 238000000295 emission spectrum Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 229920000620 organic polymer Polymers 0.000 description 3
- -1 rare earth ions Chemical class 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06754—Fibre amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10007—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating in optical amplifiers
Abstract
The invention discloses a polymer optical waveguide amplifier based on PbS quantum dots and a preparation method thereof, which belong to the technical field of polymer optical waveguide device preparation. Because the PbS quantum dot is easy to dissolve in organic solvents (such as toluene and n-hexane) and the stability in the organic solvents is higher, the PbS quantum dot is dissolved in toluene, so that the stability of the PbS quantum dot is improved. Meanwhile, pbS quantum dots are sensitive to temperature and are easy to fail in a high-temperature environment, so that the process flow is changed. The method utilizes an ultraviolet thermal photo-bleaching process, the core layer material is not developed, and only a refractive index difference is formed between a waveguide area and a non-waveguide area in the doped SU-8 to realize a light guide channel, so that the temperature of the PbS quantum dot can be controlled within an adjustable range, and the photo-bleaching process can also realize high-concentration doping.
Description
Technical Field
The invention belongs to the technical field of polymer optical waveguide device preparation, and particularly relates to a polymer optical waveguide amplifier based on PbS quantum dots and a preparation method thereof.
Background
Optical waveguide amplifiers have been developed, and have the advantages of small size, compact structure, simple process, mature technology, and the like, and have been attracting attention in recent years. However, in order to increase the capacity of the communication system, a wavelength division multiplexing technology needs to be used, which puts higher demands on the broadband characteristics of the optical waveguide amplifier.
At present, organic polymer optical waveguide amplifiers have been studied more, but have some problems. The doping amount of inorganic rare earth ions (such as bait, ytterbium, thulium and the like) in organisms is not easy to control, and the high-concentration doping can cause the agglomeration of nano particles and can only be doped at a lower concentration; in addition, the quantum efficiency of the rare earth ion luminescence in the organic matrix is difficult to improve, and the fluorescence lifetime is short. With the rapid development of artificial nanomaterials, theoretical research and experimental exploration show that the optical waveguide amplifier manufactured by the nanomaterials with the quantum dot structures can effectively solve the problems of the organic polymer optical waveguide amplifier. Firstly, the doping amount of the quantum dots can be adjusted according to the requirement, so that high-concentration doping can be realized; secondly, the quantum effect of the nano material of the quantum dot structure is a unique advantage, the excitation spectrum is wider, the emission spectrum is narrower, the quantum efficiency is obviously improved, and the fluorescence lifetime is longer.
In the field of research of quantum dots, the unique optical properties and stability of quantum dots are of interest to researchers. The simplest quantum dot structure is a mononuclear structure, the activity of the surface of the quantum dot of the mononuclear structure is high, the quantum dot can easily react with background materials, and the quantum dot has the defects of low stability, easy agglomeration and the like. The previously reported quantum dot optical waveguide amplifier is that the quantum dot is coated on the upper cladding layer, so that the quantum dot is deactivated, and the performance of the amplifier is not very stable.
Disclosure of Invention
Aiming at the problems of limited bandwidth and the like of a polymer optical waveguide amplifier in the prior art, the invention provides a polymer optical waveguide amplifier based on PbS quantum dots and a preparation method thereof. Because the PbS quantum dot is easy to dissolve in organic solvents (such as toluene and n-hexane) and the stability in the organic solvents is higher, the PbS quantum dot is dissolved in toluene, so that the stability of the PbS quantum dot is improved. Meanwhile, pbS quantum dots are sensitive to temperature and are easy to fail in a high-temperature environment, so that the process flow is changed. The method utilizes an ultraviolet thermal photo-bleaching process, the core layer material is not developed, and only a refractive index difference is formed between a waveguide area and a non-waveguide area in the doped SU-8 to realize a light guide channel, so that the temperature of the PbS quantum dot can be controlled within an adjustable range, and the photo-bleaching process can also realize high-concentration doping.
The invention is realized by the following technical scheme:
the preparation method of the polymer optical waveguide amplifier based on the PbS quantum dots specifically comprises the following steps:
step one: preparation of quantum dot solution:
dissolving PbS quantum dots in an organic solvent to prepare a PbS quantum dot solution;
step two: preparation of core layer material:
adding the PbS quantum dot solution prepared in the first step into SU-8, and putting the solution into an ultrasonic machine to uniformly mix the solution and the solution to prepare PbS quantum dot colloid, namely core layer material;
step three: preparation of a substrate:
taking cut silicon dioxide Sheet (SiO) 2 ) Respectively cleaning with acetone, ethanol and deionized water;
step four: spin-coating the PbS quantum dot colloid prepared in the second step on the silicon dioxide sheet cleaned in the third step by adopting a spin-coating method, and cooling to room temperature after pre-baking at 60 ℃ for 10 minutes and at 90 ℃ for 20 minutes to form a core layer film;
step five: ultraviolet lithography:
carrying out ultraviolet lithography by selecting a positive photoetching plate with a waveguide shape, putting the positive photoetching plate on the core layer film prepared in the step four, exposing the area outside the strip waveguide to ultraviolet irradiation, and shielding the strip waveguide area, wherein the ultraviolet exposure time is 25-30s;
step six: middle drying and post drying treatment:
and (3) middle baking: placing the sample wafer after photoetching on an electric heating plate for drying; firstly, heating to 65 ℃, keeping for 10 minutes, and keeping for 10 minutes after continuously heating to 95 ℃;
post-baking: the sample wafer after the middle drying is not subjected to wet development, but is directly heated to 120 ℃ and kept for 20 minutes for post drying; the refractive index of the lower cladding of the exposed area of the core layer is reduced, and the refractive index of the unexposed area of the core layer is increased, namely, a refractive index difference is formed between the waveguide area and the non-waveguide area;
step seven: spin-coating PMMA upper cladding on the dried core waveguide, and placing the core waveguide into an oven to be cured for 2.5 hours at the temperature of 120 ℃ to obtain the polymer optical waveguide amplifier based on PbS quantum dots.
Preferably, the particle size of the PbS quantum dots in the step one is 5-8nm.
Preferably, the organic solvent in the first step is toluene or n-hexane.
Preferably, the concentration of the PbS quantum dot colloid prepared in the step two is 0.8-2.0mg/ml.
Preferably, the volume ratio of the PbS quantum dot solution to the SU-8 in the second step is 1:10.
Preferably, the spin-coating speed is 3000rpm and the spin-coating time is 20s.
Compared with the prior art, the invention has the following advantages:
1. according to the preparation method, the PbS quantum dots are dissolved in the organic solvent (such as toluene and n-hexane), so that the stability and the optical property of the PbS quantum dots can be greatly improved;
2. the preparation method of the invention has high repeatability, simple process flow and easy operation, and the optical waveguide amplifier with high stability can be obtained through repeated experiments;
3. the polymer optical waveguide amplifier based on the PbS quantum dots, which is prepared by the preparation method, has the advantages of simple structure, wide bandwidth, stable performance and the like, and provides a new way for expanding optical fiber communication and optical device preparation.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below. Like elements or portions are generally identified by like reference numerals throughout the several figures. In the drawings, elements or portions thereof are not necessarily drawn to scale.
FIG. 1 is a flow chart of a method of fabricating a polymer optical waveguide amplifier based on PbS quantum dots of the present invention;
FIG. 2 is a block diagram of a polymer optical waveguide amplifier based on PbS quantum dots of the present invention;
FIG. 3 is a Transmission Electron Microscope (TEM) image of PbS quantum dots employed in the present invention;
fig. 4 is a top view of a PbS quantum dot optical waveguide amplifier employed in the present invention;
FIG. 5 is a diagram of a simplified optical waveguide amplifier test system according to the present invention;
FIG. 6 is an emission spectrum of a PbS quantum dot employed in the present invention;
in the figure: SU-8 doped core 1, uv light 2, positive tone plate 3, silica substrate 4, upper cladding PMMA5, core slab waveguide 6, unexposed region 7, 980nm laser 8, tunable laser 9, optical isolator 10, wavelength division multiplexer 11, optical waveguide amplifier 12, spectrometer 13.
Detailed Description
The following embodiments of the present invention will be described in detail with reference to the accompanying drawings, which are only used to more clearly illustrate the technical solution of the present invention, and therefore are only used as examples, and are not to be construed as limiting the scope of the present invention.
It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention pertains.
Example 1
PbS quantum dots are provided by star-violet (Shanghai) new material technology development limited, and are black in color. The morphology and particle size were observed using a high resolution transmission electron microscope TEM, as shown in figure 1. The grain diameter is 6nm and the size is uniform.
Preparing PbS quantum dot colloid:
25mg of oil-soluble PbS quantum dots are dissolved in 2ml of toluene to prepare a PbS quantum dot solution with the concentration of 12.5 mg/ml; and (3) taking a proper amount of PbS quantum dot solution, adding a certain amount of SU-8 (2005) glue (operating in a light-shielding environment), and diluting the glue into different concentrations (0.8-2.0 mg/ml). And then respectively putting the materials into an ultrasonic machine for uniform mixing to prepare the PbS colloid.
The quantum dot belongs to a mononuclear structure, has high surface activity, is easy to react with background materials, adopts toluene as a survival environment of the quantum dot, and can improve the stability of the quantum dot.
Example 2
The silica flakes 4 were washed and then dried to obtain a substrate. SU-8 doped core material 1 (PbS quantum dot colloid in example 1) at a concentration of 1.4mg/ml was taken, sucked into a 1ml syringe and a 0.45 μm molecular sieve was fitted on the syringe, and the core material was filtered. Spin coating (3000 rpm,20 s) is carried out by a spin coater, the temperature is kept for 10 minutes after spin coating and is baked at 60 ℃, the temperature is continuously raised to 90 ℃ and is kept for 20 minutes, and ultraviolet lithography is carried out after the temperature is reduced to room temperature. During exposure, a positive photoetching plate 3 with a waveguide shape is selected for ultraviolet photoetching, the photoetching plate is placed on a sample wafer coated with a core layer material, the area except the strip-shaped waveguide is exposed under the irradiation of ultraviolet light 2, the strip-shaped waveguide area is shielded, and the exposure time is 30s. And (5) placing the sample wafer after photoetching on an electric heating plate for drying. Firstly, heating to 65 ℃, keeping for 10 minutes, and keeping for 10 minutes after continuously heating to 95 ℃; the sample wafer after the middle drying is directly heated to 120 ℃ for 20min for post drying without wet developing. The refractive index of the lower cladding of the core exposure region 7 is reduced, and the refractive index of the unexposed waveguide region 6 of the core is increased; after post-baking, a layer of PMMA5 was applied as an upper cladding, followed by spin-coating of PMMA polymer (3000 rpm for 20 s) with a spin coater, followed by high temperature curing at 120℃for 120 minutes.
The quantum dot optical waveguide amplifier reported before is easy to inactivate by only coating PbS quantum dot solution on a core layer as an upper cladding layer. The quantum dot optical waveguide amplifier mixes the quantum dot with the ultraviolet curing glue (SU-8) as a core layer material, and photo-etching the core layer material into the waveguide, and then coating a layer of coating and wrapping the core layer material, so that the stability of the PbS quantum dot is greatly improved.
Example 3
Fig. 3 is a physical diagram of a PbS quantum dot polymer optical waveguide amplifier. And naturally cleaving two ends of the prepared device, wherein the length of the device is 10-20 mm, and testing the gain performance of the device by directly coupling the optical fiber with the optical waveguide device.
FIG. 4 is a schematic diagram of a test system. The tunable laser 9 (wavelength is 1510-1600 nm) is used as a signal light source, and the 980nm laser 8 is used as a pumping light source. Both the signal light and the pump light are coupled through a wavelength division multiplexer 11 (WDM) and then enter a gain medium optical waveguide amplifier 12 through the WDM. To prevent self-oscillation in the device, an isolator 10 was installed after the 980nm laser. Under the excitation action of the pumping light, the PbS quantum dots in the optical waveguide amplifier are induced by the signal light to generate stimulated radiation, so that the signal light is amplified. The output light is detected by an optical fiber input into a spectrum analyzer (OSA) 13.
Example 4
Fig. 5 shows an emission spectrum of the PbS quantum dot, wherein the half-width of the emission spectrum is less than or equal to 120nm, and it can be seen from the emission spectrum that the emission peak of the PbS quantum dot material is located near 1550nm, the half-width (FWHM) is about 120nm, and the half-width is much larger than that of the organic polymer system, which indicates that the bandwidth of the PbS quantum dot material is wider. The preparation of the optical waveguide amplifier by taking the PbS quantum dots as the gain medium greatly increases the bandwidth of the amplifier, and can realize all-optical amplification in the S-C-L wave band, namely the capacity of a communication system is enlarged.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention.
In addition, the specific features described in the above embodiments may be combined in any suitable manner, and in order to avoid unnecessary repetition, various possible combinations are not described further.
Moreover, any combination of the various embodiments of the invention can be made without departing from the spirit of the invention, which should also be considered as disclosed herein.
Claims (7)
1. The preparation method of the polymer optical waveguide amplifier based on the PbS quantum dots is characterized by comprising the following steps of:
step one: preparation of quantum dot solution:
dissolving PbS quantum dots in an organic solvent to prepare a PbS quantum dot solution;
step two: preparation of core layer material:
adding the PbS quantum dot solution prepared in the first step into SU-8, and putting the solution into an ultrasonic machine to uniformly mix the solution and the solution to prepare PbS quantum dot colloid, namely core layer material;
step three: preparation of a substrate:
taking cut silicon dioxide slices, and cleaning the cut silicon dioxide slices by using acetone, ethanol and deionized water respectively;
step four: spin-coating the PbS quantum dot colloid prepared in the second step on the silicon dioxide sheet cleaned in the third step by adopting a spin-coating method, and cooling to room temperature after pre-baking at 60 ℃ for 10 minutes and at 90 ℃ for 20 minutes to form a core layer film;
step five: ultraviolet lithography:
carrying out ultraviolet lithography by selecting a positive photoetching plate with a waveguide shape, putting the positive photoetching plate on the core layer film prepared in the step four, exposing the area outside the strip waveguide to ultraviolet irradiation, and shielding the strip waveguide area, wherein the ultraviolet exposure time is 25-30s;
step six: middle drying and post drying treatment:
and (3) middle baking: placing the sample wafer after photoetching on an electric heating plate for drying; firstly, heating to 65 ℃, keeping for 10 minutes, and keeping for 10 minutes after continuously heating to 95 ℃;
post-baking: the sample wafer after the middle drying is not subjected to wet development, but is directly heated to 120 ℃ and kept for 20 minutes for post drying; the refractive index of the lower cladding of the exposed area of the core layer is reduced, and the refractive index of the unexposed area of the core layer is increased, namely, a refractive index difference is formed between the waveguide area and the non-waveguide area;
step seven: spin-coating PMMA upper cladding on the dried core waveguide, and placing the core waveguide into an oven to be cured for 2.5 hours at the temperature of 120 ℃ to obtain the polymer optical waveguide amplifier based on PbS quantum dots.
2. The method for preparing the polymer optical waveguide amplifier based on the PbS quantum dots, as claimed in claim 1, wherein the particle size of the PbS quantum dots in the first step is 5-8nm.
3. The method for preparing a PbS quantum dot-based polymer optical waveguide amplifier as set forth in claim 1, wherein the organic solvent in the first step is toluene or n-hexane.
4. The method for preparing the polymer optical waveguide amplifier based on the PbS quantum dots, as claimed in claim 1, wherein the concentration of the PbS quantum dot colloid prepared in the second step is 0.8-2.0mg/ml.
5. The method for preparing the polymer optical waveguide amplifier based on the PbS quantum dots, as claimed in claim 1, wherein the volume ratio of the PbS quantum dot solution to the SU-8 in the second step is 1:10.
6. The method for preparing the polymer optical waveguide amplifier based on the PbS quantum dots, as claimed in claim 1, wherein the spin coating speed is 3000rpm, and the spin coating time is 20s.
7. A PbS quantum dot based polymer optical waveguide amplifier prepared by the method of any one of claims 1-6.
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| JP2002350663A (en) * | 2001-05-22 | 2002-12-04 | Hitachi Cable Ltd | Polymer waveguide and method of manufacturing the same |
| CN104345385A (en) * | 2014-11-25 | 2015-02-11 | 厦门大学 | Silicon-based polymer planar optical waveguide amplifier doped with rare earth neodymium complex |
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| KR101945128B1 (en) * | 2017-11-08 | 2019-02-01 | 단국대학교 산학협력단 | Quantum Dot Light Emitting Diode and Fabrication Method Thereof |
| CN110441861A (en) * | 2019-08-19 | 2019-11-12 | 吉林大学 | Graphene adulterates MZI type optical waveguide hybrid integrated thermo-optical switch of trapezoidal covering and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7035518B2 (en) * | 2001-04-13 | 2006-04-25 | Hitachi Cable, Ltd. | Polymer waveguides and process for producing the same |
| US6875561B2 (en) * | 2002-05-03 | 2005-04-05 | Hon Hai Precision Ind. Co., Ltd. | Method for making polymer-based rare earth-doped waveguide |
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2021
- 2021-10-19 CN CN202111213492.9A patent/CN113964630B/en active Active
Patent Citations (7)
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|---|---|---|---|---|
| EP0446672A1 (en) * | 1990-03-16 | 1991-09-18 | International Business Machines Corporation | Polymeric optical waveguides and methods of forming the same |
| JP2002350663A (en) * | 2001-05-22 | 2002-12-04 | Hitachi Cable Ltd | Polymer waveguide and method of manufacturing the same |
| CN104345385A (en) * | 2014-11-25 | 2015-02-11 | 厦门大学 | Silicon-based polymer planar optical waveguide amplifier doped with rare earth neodymium complex |
| KR20170096319A (en) * | 2016-02-16 | 2017-08-24 | 포항공과대학교 산학협력단 | Method for manufacturing active optical waveguide |
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| CN113964630A (en) | 2022-01-21 |
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