CN113964274A - Perovskite solar cell containing Al-doped ZnO nanorod array and preparation method thereof - Google Patents

Perovskite solar cell containing Al-doped ZnO nanorod array and preparation method thereof Download PDF

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CN113964274A
CN113964274A CN202111080661.6A CN202111080661A CN113964274A CN 113964274 A CN113964274 A CN 113964274A CN 202111080661 A CN202111080661 A CN 202111080661A CN 113964274 A CN113964274 A CN 113964274A
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doped zno
nanorod array
zno nanorod
solar cell
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陈建林
陈术
邱炜
张瑜
陈荐
彭卓寅
龚丽
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Changsha University of Science and Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a perovskite solar cell containing an Al-doped ZnO nanorod array and a preparation method thereof. The preparation method comprises the steps of preparing a seed crystal layer on a transparent conductive substrate layer, preparing an Al-doped ZnO nanorod array layer on the seed crystal layer by an electrochemical deposition method, controlling the voltage to be-1.45V-1.55V, keeping the deposition temperature at 80 +/-3 ℃, controlling the deposition time to be 10-30 min, and then preparing a passivation layer, a metal halide perovskite light absorption layer and a back electrode layer to obtain the cell.

Description

Perovskite solar cell containing Al-doped ZnO nanorod array and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a perovskite solar cell containing an Al-doped ZnO nanorod array and a preparation method thereof, and specifically relates to a metal halide perovskite solar cell taking the Al-doped ZnO nanorod array as an electron transport layer and a preparation method thereof.
Background
In the last decade, Perovskite Solar Cells (PSCs) have been developed rapidly, being considered as the most potential solar cells to compete with crystalline silicon solar cells, and since 2009, the Photoelectric Conversion Efficiency (PCE) of organic-inorganic hybrid PSCs has increased from 3.8% to 25.5%, while PCEs of all-inorganic PSCs, although inferior to the former, have received great attention for their higher stability. The PSCs have wide and cheap raw material sources and simple preparation process, can be prepared on a flexible substrate, and are emerging photovoltaic devices with the greatest development prospect at present.
The electron transport layer material is one of the key materials of PSCs, and most commonly TiO2However, the ultraviolet light catalytic activity is strong, and the generated oxygen or hydroxyl radical can destroy the organic chemical bond of the perovskite light absorption layer, thereby influencing the long-term stability; TiO 22High-temperature sintering at 500 ℃ or above is required, and the electron mobility is low. ZnO with TiO2The one-dimensional nanostructure array with similar semiconductor properties can be prepared at low temperature, and the one-dimensional nanostructure array with rich appearance can be easily obtained. ZnO nanorod array replacing granular TiO2The material used as an electron transport layer has the advantages of single crystal linear electron transport, electron transport channel increase, light diffraction and the like, and has the functions of accelerating electron transport and light trapping; in addition, the ZnO nanorod array can effectively play a role in buffering bending stress/strain, and the mechanical flexibility of the device is improved. However, the concentration of the current carrier of the undoped ZnO nano-rod array is low, and the electric conductivity of the undoped ZnO nano-rod array is still low, so that electrons generated by the light absorption layer cannot be transmitted to an external circuit in time, and the short-circuit current density is further reducedLow; in addition, hydroxyl and oxygen vacancies existing on the surface of ZnO are alkalescent and can become a carrier non-radiative recombination center, so that the photoelectric conversion efficiency and the stability of the cell are reduced.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a perovskite solar cell containing an Al-doped ZnO nanorod array, which can improve the conductivity, stability and output performance of the cell, has no destructive effect on perovskite materials and shows excellent thermal stability and water-oxygen stability in natural environment, and a preparation method thereof,
in order to solve the technical problems, the invention adopts the following technical scheme.
The perovskite solar cell comprises a transparent conductive substrate layer, an electron transmission layer, a metal halide perovskite light absorption layer and a back electrode layer which are sequentially arranged from bottom to top, wherein the electron transmission layer consists of a seed crystal layer, an Al-doped ZnO nanorod array layer and a passivation layer from bottom to top.
Preferably, in the perovskite solar cell containing the Al-doped ZnO nanorod array, the transparent conductive substrate layer is made of ITO conductive glass, FTO conductive glass, AZO conductive glass or flexible polymer substrate, and/or the seed crystal layer is SnO2A seed crystal layer, wherein the passivation layer is SnO2The passivation layer and/or the back electrode layer is a carbon electrode, a silver electrode or a gold electrode, and/or the metal halide perovskite light absorption layer is an organic-inorganic hybrid perovskite light absorption layer or an all-inorganic perovskite light absorption layer, and the organic-inorganic hybrid perovskite light absorption layer comprises FAPBI3Perovskite light absorbing layers or MAPbI3A perovskite light-absorbing layer comprising CsPbBr3Perovskite light-absorbing layer, CsPbBr2I perovskite light absorption layer, CsPbBrI2Perovskite light-absorbing layers or CsPbI3A perovskite light absorbing layer.
As a general technical concept, the present invention also provides a method for preparing the above perovskite solar cell containing the Al-doped ZnO nanorod array, comprising the steps of:
s1, preparing a seed crystal layer on the transparent conductive substrate layer;
s2, preparing an Al-doped ZnO nanorod array layer on the seed crystal layer, wherein the preparation process comprises the following steps: adding soluble salt of zinc into water to obtain a zinc salt solution, adding soluble salt of aluminum into water to obtain an aluminum salt solution, adding the aluminum salt solution into the zinc salt solution, controlling the atomic ratio of Al to Zn to be 0.75-1.25: 100, stirring to obtain a mixed solution, heating to 80 +/-3 ℃, performing electrochemical deposition by taking an inert electrode as a positive electrode and a transparent conductive substrate layer for depositing a seed crystal layer as a negative electrode, controlling the voltage to be-1.45V-1.55V, keeping the deposition temperature at 80 +/-3 ℃, controlling the deposition time to be 10-30 min, performing heat treatment after deposition, and obtaining an Al-doped ZnO nanorod array layer on the seed crystal layer;
s3, preparing a passivation layer on the Al-doped ZnO nanorod array layer;
s4, preparing a metal halide perovskite light absorption layer on the passivation layer;
s5, preparing a back electrode layer on the metal halide perovskite light absorption layer to obtain the perovskite solar cell containing the Al-doped ZnO nanorod array.
Preferably, in the above preparation method of the perovskite solar cell containing the Al-doped ZnO nanorod array, in step S1, the seed crystal layer is SnO2Seed crystal layer of said SnO2The preparation method of the seed crystal layer comprises the following steps: dissolving soluble tin salt in absolute ethyl alcohol to obtain an ethanol solution of the tin salt, controlling the concentration of the tin salt in the ethanol solution of the tin salt to be 0.15-0.25 mol/L, stirring at normal temperature for 85-95 min, spin-coating on the transparent conductive substrate layer at the speed of 2500-3500 rpm for 25-35 s, and then carrying out heat treatment at the temperature of 345-355 ℃ for 55-95 min.
Preferably, in the above preparation method of the perovskite solar cell including the Al-doped ZnO nanorod array, in step S3, the passivation layer is SnO2Passivation layer of said SnO2Preparation method of passivation layerComprises the following steps: dissolving soluble tin salt in absolute ethyl alcohol to obtain an ethanol solution of tin salt, controlling the concentration of the tin salt in the ethanol solution of tin salt to be 0.15-0.25 mol/L, stirring at normal temperature for 85-95 min, spin-coating the tin salt on the surface of the Al-doped ZnO nanorod array layer at the speed of 4500-5500 rpm for 25-35 s, and then carrying out heat treatment at the temperature of 345-355 ℃ for 25-65 min.
Preferably, in step S2, the concentration of the zinc salt solution is 0.0025mol/L to 0.0035mol/L, the concentration of the aluminum salt solution is 0.0025mol/L to 0.0035mol/L, the soluble salt of zinc is zinc nitrate hexahydrate, and the soluble salt of aluminum is aluminum nitrate nonahydrate.
In the above preparation method of the perovskite solar cell including the Al-doped ZnO nanorod array, preferably, in step S2, the stirring time is 30min to 35 min.
In the above method for preparing a perovskite solar cell including an Al-doped ZnO nanorod array, preferably, in step S2, the electrochemical deposition is performed in a hall cell, the inert electrode is platinum titanium mesh or platinum, and the distance between the positive electrode and the negative electrode is 2cm to 3 cm.
In the above preparation method of the perovskite solar cell including the Al-doped ZnO nanorod array, preferably, in step S2, the heat treatment temperature is 450 ℃ ± 3 ℃, the heat treatment time is 30min to 45min, and the heat treatment atmosphere is air.
In the invention, a hole transport layer can be added or not added between the metal halide perovskite light absorption layer and the back electrode layer, and the hole transport layer is selected according to actual needs.
In the present invention, the thickness of each layer of the battery is within the conventional thickness range, and can be set according to the actual battery requirements, so the present invention is not limited. In general, the following ranges may be set: 500nm-600nm of transparent conductive substrate layer, 80nm-120nm of seed crystal layer, 300nm-500nm of Al-doped ZnO nanorod array layer, 50nm-80nm of passivation layer, 500nm-1000nm of metal halide perovskite light absorption layer and 800 nm and 1200nm of back electrode layer, but the invention is not limited to the above.
Compared with the prior art, the invention has the advantages that:
the invention provides a perovskite solar cell containing an Al-doped ZnO nanorod array and a preparation method thereof2) The ZnO nano-rod is used as a passivation layer to avoid the direct contact of the ZnO nano-rod and the perovskite thin film, and the ZnO nano-rod and the perovskite thin film are simultaneously carried out to solve the existing problems. The Al-doped ZnO nanorod array prepared by the method has the advantages of low cost, large-scale preparation and controllable shape and thickness of the nanorod, the obtained ZnO nanorod has high electron mobility, high conductivity and good stability, and the output performance of a solar cell prepared by the nanorod is greatly improved.
The invention adopts an electrodeposition method to realize the growth of the Al-doped ZnO nanorod array, greatly improves the conductivity of the Al-doped ZnO nanorod array and obtains the process control rule of the Al-doped ZnO nanorod array. By SnO2The size, the shape and the thickness of the Al-doped ZnO nanorod array are controlled by seed crystal layer and electrodeposition process parameters (including the concentration of an electrodeposition solution, the distance between a positive electrode and a negative electrode, electrodeposition temperature, electrodeposition time and the like), the conductivity of the Al-doped ZnO nanorod array is controlled by the Al doping amount, and SnO is used2The passivation layer prevents the metal halide perovskite light absorption layer from directly contacting the surface of the Al-doped ZnO nanorod array. The method for preparing the Al-doped ZnO nano-structure array with the special morphology is simple in preparation process, can grow in a large area at low cost, has an excellent textured light trapping effect, and can improve the light capturing efficiency of the solar cell. Compared with the traditional TiO nano-rod array electron layer, the Al-doped ZnO nano-rod array electron layer2The electron transport layer greatly improves the electron mobility, obviously enhances the electrical conductivity and greatly improves the thermal stability. Al-doped ZnO nanoparticlesCompared with the traditional SnO of the rod array electron transport layer2As an electron transport layer, the photoelectric conversion efficiency, the open-circuit voltage and the short-circuit current density are obviously improved, and the performance of the cell is greatly improved.
Drawings
Fig. 1 is a schematic perspective view of a perovskite solar cell including an Al-doped ZnO nanorod array according to example 1 of the present invention.
Fig. 2 is a schematic cross-sectional structure view of the perovskite solar cell containing the Al-doped ZnO nanorod array according to example 1 of the present invention.
FIG. 3 is an SEM image of the Al-doped ZnO-containing nanorod array prepared in example 1 of the present invention.
FIG. 4 is a J-V curve diagram of a perovskite solar cell containing an Al-doped ZnO nanorod array, which is prepared in example 1 of the invention.
FIG. 5 is SnO of comparative example 12CsPbBr as electron transport layer3J-V plot of perovskite solar cells.
FIG. 6 shows undoped ZnO nanorods based CsPbBr3J-V plot of perovskite solar cells.
Illustration of the drawings:
1. a transparent conductive substrate layer; 2. a seed crystal layer; 3. an Al-doped ZnO nanorod array layer; 4. a passivation layer; 5. a metal halide perovskite light absorbing layer; 6. and a back electrode layer.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments of the description, without thereby limiting the scope of protection of the invention. The materials and equipment used in the following examples are commercially available.
Example 1
The perovskite solar cell comprises a transparent conductive substrate layer 1, an electron transmission layer, a metal halide perovskite light absorption layer 5 and a back electrode layer 6 which are sequentially arranged from bottom to top, wherein the electron transmission layer consists of a seed crystal layer 2, an Al-doped ZnO nanorod array layer 3 and a passivation layer 4 from bottom to top.
In this embodiment, the transparent conductive substrate layer 1 is an FTO conductive glass layer, and the seed crystal layer 2 is SnO2Seed crystal layer and passivation layer 4 of SnO2The passivation layer, the back electrode layer 6 is a carbon electrode, the metal halide perovskite light absorption layer 5 is CsPbBr3Perovskite thin film layer.
The preparation method of the perovskite solar cell containing the Al-doped ZnO nanorod array comprises the following steps:
s1 cleaning FTO transparent conductive glass
The FTO conductive glass (commercially available) is ultrasonically cleaned by sequentially adopting a glass cleaning agent, deionized water, acetone, isopropanol and absolute ethyl alcohol for 30min respectively, is dried at 80 ℃ for 20min, and is cleaned by using an ultraviolet-ozone cleaning machine for 25 min.
S2 preparation of SnO2Seed crystal layer
0.1896g of anhydrous stannous chloride is dissolved in 5mL of anhydrous ethanol, and the mixture is stirred for 90min in an open atmosphere at normal temperature without aging. An ethanol solution of stannous chloride was spin coated onto the cleaned FTO conductive glass at 3000rpm for 30 seconds. Placing in a muffle furnace, and performing heat treatment at 350 ℃ for 60min to obtain SnO2A seed layer.
S3, preparing Al-doped ZnO nanorod array layer 3
1.1254g of aluminum nitrate nonahydrate (Al (NO)3)3·9H2O) is dissolved in 1000mL of deionized water, and is stirred for 30min at normal temperature to obtain an aluminum nitrate solution; 0.4463g of zinc nitrate hexahydrate (Zn (NO)3)2·6H2O) was dissolved in 500mL of deionized water to obtain a zinc nitrate solution. 5mL of aluminum nitrate solution is added into zinc nitrate solution, the Al/Zn atomic ratio is controlled to be 1.00 at.%, and the mixture is stirred for 30min at normal temperature to obtain a mixed solution (namely, an electrodeposition solution). Adding the electrodeposition solution into a Hall tank, heating to 80 ℃, and depositing SnO2FTO conductive glass of the seed crystal layer is arranged at a negative electrode, a platinum titanium mesh (inert electrode) is arranged at a positive electrode, the distance between the positive electrode and the negative electrode is 2cm, the voltage is controlled at-1.5V, electrochemical deposition is carried out for 15min, and the temperature is kept at 80 ℃ during the period. After deposition, putting the product into a muffle furnace for heat treatment at 450 ℃ for 30min in air, and then cooling along with the furnaceAnd obtaining the Al-doped ZnO nanorod array layer 3, wherein the SEM test result is shown in figure 3.
S4 preparation of SnO2Passivation layer
0.1896g of anhydrous stannous chloride is dissolved in 5mL of anhydrous ethanol, and the mixture is stirred for 90min in an open atmosphere at normal temperature without aging. Spin-coating ethanol solution of stannous chloride on the Al-doped ZnO nanorod array layer 3 at 5000rpm for 30s, placing in a muffle furnace, and performing heat treatment at 350 ℃ for 30min to obtain SnO2And a passivation layer.
S5, preparation CsPbBr3All-inorganic perovskite thin film
S5.1 reaction of PbBr2Dissolving in N, N-dimethylformamide DMF to prepare PbBr with concentration of 1.0mol/L2A DMF solution of (1); CsBr was dissolved in methanol to prepare a methanol solution having a CsBr concentration of 0.07 mol/L.
S5.2 in SnO2Spin coating PbBr on the passivation layer at 2000rpm for 30s2Performing heat treatment on the solution at 90 ℃ for 30min, dynamically spin-coating (i.e. spin-coating while dripping) CsBr solution at 2000rpm for 30s, performing heat treatment at 250 ℃ for 5min, and repeating the steps (starting from spin-coating CsBr solution) for 6 times to obtain CsPbBr3Perovskite thin film layer.
S6 preparation of carbon electrode layer
Preparing a carbon electrode by adopting a doctor blade method, placing the carbon electrode on a 120 ℃ hot bench for drying for 20min after the carbon electrode is prepared, and finally preparing the complete battery device FTO/SnO2/AZO NRA/SnO2/CsPbBr3/C。
The perovskite solar cell containing the Al-doped ZnO nanorod array prepared in the embodiment is subjected to a J-V test, and the test result is shown in FIG. 4. As can be seen from FIG. 4, the open circuit voltage (V) in example 1oc) 1.38V, short-circuit current density (J)sc) Is 6.83mA/cm2The Fill Factor (FF) was 65% and the Photoelectric Conversion Efficiency (PCE) was 6.09%, showing excellent photovoltaic performance.
Comparative example 1
Adopts SnO2CsPbBr as electron transport layer3The preparation method of the all-inorganic perovskite solar cell comprises the following steps:
(1) cleaning the FTO transparent conductive glass: the same as step S1 in example 1.
(2) Preparation of SnO2Electron transport layer: 0.1896g of anhydrous stannous chloride is dissolved in 5mL of anhydrous ethanol, and the mixture is stirred for 90min in an open atmosphere at normal temperature without aging. The stannous chloride solution is spin-coated on the cleaned FTO conductive glass at 3000rpm for 30s, and heat-treated on a heating table at 200 ℃ for 120min, wherein the heat-treatment temperature is the optimal heat-treatment temperature determined according to the best experimental result.
(3) Preparation of CsPbBr3All-inorganic perovskite thin film: the same as step S5 in example 1.
The all-inorganic perovskite solar cell prepared in the comparative example was subjected to a J-V test, and the test results are shown in fig. 5. As can be seen from FIG. 5, in comparative example 1, the open-circuit voltage was 1.14V and the short-circuit current density was 6.93mA/cm2The fill factor was 60% and the photoelectric conversion efficiency was 4.83%. It can be seen that the properties of example 1 are superior to those of comparative example 1. The effect of the Al-doped ZnO nanorod array as an electron transport layer is better than that of the traditional SnO2An electron transport layer.
Comparative example 2
Undoped ZnO nanorod array based CsPbBr3The perovskite solar cell preparation method is basically the same as that of the embodiment 1, and the difference is only that: the ZnO nanorod array is not doped with Al.
CsPbBr adopting ZnO nanorod prepared under the condition as electron transport layer3All inorganic perovskite solar cells were subjected to J-V testing as shown in fig. 6. As can be seen from FIG. 6, in comparative example 2, the open-circuit voltage was 1.25V and the short-circuit current density was 5.81mA/cm2The fill factor was 63% and the photoelectric conversion efficiency was 4.6%, and it can be seen that the cell performance of example 1 was superior to that of comparative example 2. The Al-doped ZnO nanorod array can integrally improve the performance of the ZnO nanorod array as an electron transport layer.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner. Although the present invention has been described with reference to the preferred embodiments, it is not intended to be limited thereto. Those skilled in the art can make many possible variations and modifications to the disclosed embodiments, or equivalent modifications, without departing from the spirit and scope of the invention, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.

Claims (9)

1. The perovskite solar cell is characterized by comprising a transparent conductive substrate layer (1), an electron transmission layer, a metal halide perovskite light absorption layer (5) and a back electrode layer (6) which are sequentially arranged from bottom to top, wherein the electron transmission layer is composed of a seed crystal layer (2), an Al-doped ZnO nanorod array layer (3) and a passivation layer (4) from bottom to top.
2. The perovskite solar cell comprising an Al-doped ZnO nanorod array according to claim 1, wherein the transparent conductive substrate layer (1) is an ITO conductive glass, an FTO conductive glass, an AZO conductive glass or a flexible polymer substrate, and/or the seed layer (2) is SnO2A seed crystal layer, wherein the passivation layer (4) is SnO2A passivation layer, and/or the back electrode layer (6) is a carbon electrode, a silver electrode or a gold electrode, and/or the metal halide perovskite light absorption layer (5) is an organic-inorganic hybrid perovskite light absorption layer or an all-inorganic perovskite light absorption layer, and the organic-inorganic hybrid perovskite light absorption layer comprises FAPBI3Perovskite light absorbing layers or MAPbI3A perovskite light-absorbing layer comprising CsPbBr3Perovskite light-absorbing layer, CsPbBr2I perovskite light absorption layer, CsPbBrI2Perovskite light-absorbing layers or CsPbI3A perovskite light absorbing layer.
3. A method for preparing the perovskite solar cell containing the Al-doped ZnO nanorod array as claimed in claim 1 or 2, comprising the following steps:
s1, preparing a seed crystal layer (2) on the transparent conductive substrate layer (1);
s2, preparing an Al-doped ZnO nanorod array layer (3) on the seed crystal layer (2), wherein the preparation process comprises the following steps: adding soluble salt of zinc into water to obtain a zinc salt solution, adding soluble salt of aluminum into water to obtain an aluminum salt solution, adding the aluminum salt solution into the zinc salt solution, controlling the atomic ratio of Al to Zn to be 0.75-1.25: 100, stirring to obtain a mixed solution, heating to 80 +/-3 ℃, performing electrochemical deposition by taking an inert electrode as a positive electrode and a transparent conductive substrate layer (1) for depositing a seed crystal layer (2) as a negative electrode, controlling the voltage to be-1.45V-1.55V, keeping the deposition temperature to be 80 +/-3 ℃, controlling the deposition time to be 10-30 min, performing heat treatment after deposition, and obtaining an Al-doped ZnO nanorod array layer (3) on the seed crystal layer (2);
s3, preparing a passivation layer (4) on the Al-doped ZnO nanorod array layer (3);
s4, preparing a metal halide perovskite light absorption layer (5) on the passivation layer (4);
s5, preparing a back electrode layer (6) on the metal halide perovskite light absorption layer (5) to obtain the perovskite solar cell containing the Al-doped ZnO nanorod array.
4. The method for preparing the perovskite solar cell containing the Al-doped ZnO nanorod array according to claim 3, wherein in the step S1, the seed crystal layer (2) is SnO2Seed crystal layer of said SnO2The preparation method of the seed crystal layer comprises the following steps: dissolving soluble tin salt in absolute ethyl alcohol to obtain an ethanol solution of tin salt, controlling the concentration of the tin salt in the ethanol solution of tin salt to be 0.15-0.25 mol/L, stirring at normal temperature for 85-95 min, spin-coating on the transparent conductive substrate layer (1), wherein the spin-coating speed is 2500-3500 rpm, the spin-coating time is 25-35 s, and then carrying out heat treatment, wherein the heat treatment temperature is 345-355 ℃, and the heat treatment time is 55-95 min.
5. Preparation of perovskite solar cell containing Al-doped ZnO nanorod array according to claim 3The method is characterized in that in step S3, the passivation layer (4) is SnO2Passivation layer of said SnO2The preparation method of the passivation layer comprises the following steps: dissolving soluble tin salt in absolute ethyl alcohol to obtain an ethanol solution of tin salt, controlling the concentration of the tin salt in the ethanol solution of tin salt to be 0.15-0.25 mol/L, stirring at normal temperature for 85-95 min, spin-coating on the surface of the Al-doped ZnO nanorod array layer (3) at the speed of 4500-5500 rpm for 25-35 s, and then carrying out heat treatment at the temperature of 345-355 ℃ for 25-65 min.
6. The method for preparing the perovskite solar cell comprising the Al-doped ZnO nanorod array according to any one of claims 3 to 5, wherein in the step S2, the concentration of the zinc salt solution is 0.0025mol/L to 0.0035mol/L, the concentration of the aluminum salt solution is 0.0025mol/L to 0.0035mol/L, the soluble salt of zinc is zinc nitrate hexahydrate, and the soluble salt of aluminum is aluminum nitrate nonahydrate.
7. The method for preparing the perovskite solar cell comprising the Al-doped ZnO nanorod array according to any one of claims 3-5, wherein in the step S2, the stirring time is 30-35 min.
8. The method for preparing the perovskite solar cell with the Al-doped ZnO nanorod array according to any one of claims 3 to 5, wherein in the step S2, the electrochemical deposition is performed in a Hall cell, the inert electrode is platinum titanium mesh or platinum, and the distance between the positive electrode and the negative electrode is 2 cm-3 cm.
9. The method for preparing the perovskite solar cell comprising the Al-doped ZnO nanorod array according to any one of claims 3 to 5, wherein in the step S2, the temperature of the heat treatment is 450 ℃ ± 3 ℃, the time of the heat treatment is 30min to 45min, and the atmosphere of the heat treatment is air.
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CN115784630A (en) * 2022-11-15 2023-03-14 湖北大学 Heterojunction composite film, preparation method and application thereof, and methane gas sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115784630A (en) * 2022-11-15 2023-03-14 湖北大学 Heterojunction composite film, preparation method and application thereof, and methane gas sensor
CN115784630B (en) * 2022-11-15 2024-03-29 湖北大学 Heterojunction composite film, preparation method and application thereof, and methane gas sensor

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