CN113961143A - Data rereading method and device of memory, terminal equipment and storage medium - Google Patents
Data rereading method and device of memory, terminal equipment and storage medium Download PDFInfo
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Abstract
The invention discloses a data rereading method and device of a memory, terminal equipment and a computer storage medium, wherein the data rereading method of the memory comprises the following steps: when the memory triggering data rereading is detected, determining a logic area of a data page triggering the data rereading in the memory; if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page; or if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page. The invention can effectively improve the data re-reading efficiency, thereby ensuring or improving the data response speed of the front end of the memory correspondingly.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a method and an apparatus for re-reading data of a memory, a terminal device, and a computer storage medium.
Background
At present, when data is reread for a data page used for storing data on each physical block inside a memory, no matter whether the data page is specifically affected by Read Disturb-Read Disturb or data retention (or referred to as data standing) -data retention, which causes the number of error bits to be higher than a threshold value to trigger data reread, the memory usually adopts the same data reread mechanism to perform reread operation.
However, since the influence of Read Disturb and data retention on the threshold voltage distribution of the data page is different, the efficiency of the memory for finally performing re-reading by using the same data re-reading mechanism is naturally low. In addition, when a data page needs to be re-Read more due to the type of the stored data, the data page is affected by more Read Disturb, and the data response speed of the whole front end of the memory is reduced when the re-Read efficiency is always low.
In summary, how to improve the re-reading efficiency of the data page and further improve the response speed of the front end of the memory is a technical problem to be solved urgently in the industry.
Disclosure of Invention
The invention mainly aims to provide a data re-reading method and device of a memory, a terminal device and a computer storage medium, aiming at improving the re-reading efficiency of a data page and further improving the response speed of the front end of the memory.
In order to achieve the above object, the present invention provides a data re-reading method for a memory, where the data re-reading method for the memory includes:
when the memory triggering data rereading is detected, determining a logic area of a data page triggering the data rereading in the memory;
if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page; alternatively, the first and second electrodes may be,
and if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
Further, the method further comprises:
a preset hot read area and a preset cold read area are determined in a logic area of a memory.
Further, the step of determining a preset hot read area and a preset cold read area in a logic area of the memory includes:
monitoring the read times aiming at the logic area of the memory;
and determining a preset hot reading area and a preset cold reading area in the logic area according to the monitored reading times.
Further, after the step of determining a preset hot read area and a preset cold read area in the logic area of the memory, the method further includes:
and storing the data to be stored in the preset hot reading area or the preset cold reading area of the memory according to the data type of the data to be stored.
Further, the method further comprises:
configuring a first data re-reading mechanism corresponding to the preset hot-reading area and configuring a second data re-reading mechanism corresponding to the preset cold-reading area, wherein the first data re-reading mechanism and the second data re-reading mechanism are different in re-reading reference voltage according to each other.
Further, the step of configuring the first data re-reading mechanism corresponding to the preset hot-reading area includes:
in the memory, collecting a first re-reading reference voltage when a data page is influenced by reading interference and data is re-read;
and configuring a first data re-reading mechanism corresponding to the preset hot-reading area according to the first re-reading reference voltage.
Further, the step of configuring a second data re-reading mechanism corresponding to the preset cold-reading area includes:
collecting a second re-reading reference voltage when the data page is influenced by data retention and data re-reading is carried out in the memory;
and configuring a second data re-reading mechanism corresponding to the preset cold-reading area according to the second re-reading reference voltage.
In addition, in order to achieve the above object, the present invention further provides a data rereading apparatus for a memory, including:
the determining module is used for determining a logic area of a data page triggering data rereading in the memory when the memory triggering data rereading is detected;
the first rereading module is used for calling a first data rereading mechanism corresponding to a preset hot reading area to perform data rereading operation on the data page if the logic area is determined to be the preset hot reading area; alternatively, the first and second electrodes may be,
and if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
Each functional module of the data rereading device of the memory realizes the steps of the data rereading method of the memory when in operation.
In addition, to achieve the above object, the present invention also provides a terminal device, including: the data rereading program comprises a memory, a processor and a data rereading program of the memory, wherein the data rereading program of the memory is stored on the memory and can run on the processor, and the steps of the data rereading method of the memory are realized when the data rereading program of the memory is executed by the processor.
In addition, to achieve the above object, the present invention further provides a computer storage medium having a computer program stored thereon, wherein the computer program, when executed by a processor, implements the steps of the data re-reading method of the memory as described above.
The invention provides a data rereading method, a data rereading device, terminal equipment and a computer storage medium of a memory, wherein the data rereading method of the memory comprises the following steps: when the memory triggering data rereading is detected, determining a logic area of a data page triggering the data rereading in the memory; if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page; or if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
In the process of data rereading for a memory, once the memory is detected to trigger the data rereading, determining a specific logic area of a data page triggering the data rereading in the memory, wherein the logic area comprises a preset hot reading area and a preset cold reading area; therefore, if the data page triggering the data rereading is determined to belong to the preset hot reading area, a first data rereading mechanism corresponding to the preset hot reading area is directly called to execute specific data rereading operation aiming at the data page; or, if it is determined that the data page triggering the data re-reading belongs to the preset cold-reading area, directly calling a second data re-reading mechanism corresponding to the preset cold-reading area to perform specific data re-reading operation on the data page.
Compared with the traditional method that the same data re-reading mechanism is adopted to execute the re-reading operation no matter the data re-reading is triggered due to the influence of Read Disturb or the influence of date re-reading, the method and the device call the data re-reading mechanism with higher adaptability to the data page triggering the re-reading to execute the specific data re-reading operation by determining the logic area to which the data page triggering the data re-reading belongs, improve the data re-reading efficiency and further ensure or improve the data response speed of the front end of the memory correspondingly.
Drawings
Fig. 1 is a schematic structural diagram of the hardware operation of a terminal device according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating a data re-reading method of a memory according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a data re-reading system of a memory according to the present invention.
The objects, features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a hardware operating environment related to a terminal device according to an embodiment of the present invention.
It should be noted that fig. 1 is a schematic structural diagram of a hardware operating environment of the terminal device. The terminal device in the embodiment of the present invention may be a device for executing the data rereading method of the memory provided by the present invention for a memory based on a nand flash as a storage medium, and the terminal device may specifically be a mobile terminal, a data storage control terminal, a PC, a portable computer, or a like.
As shown in fig. 1, the terminal device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, a communication bus 1002. Wherein a communication bus 1002 is used to enable connective communication between these components. The user interface 1003 may include a Display screen (Display), an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., WI-FI interface). The memory 1005 may be a non-volatile memory (e.g., Flash memory), a high-speed RAM memory, or a non-volatile memory (e.g., a disk memory). The memory 1005 may alternatively be a storage device separate from the processor 1001.
Those skilled in the art will appreciate that the terminal device configuration shown in fig. 1 is not intended to be limiting of the terminal device and may include more or fewer components than those shown, or some components may be combined, or a different arrangement of components.
As shown in fig. 1, a memory 1005, which is a kind of computer storage medium, may include therein an operating system, a network communication module, a user interface module, and a data re-reading program of the memory. Among these, the operating system is a program that manages and controls the hardware and software resources of the sample terminal device, supports the data re-reading of memory, and the execution of other software or programs.
In the terminal apparatus shown in fig. 1, the user interface 1003 is mainly used for data communication with each terminal; the network interface 1004 is mainly used for connecting a background server and performing data communication with the background server; and the processor 1001 may be configured to call a data re-reading program of the memory stored in the memory 1005 and perform the following operations:
when the memory triggering data rereading is detected, determining a logic area of a data page triggering the data rereading in the memory;
if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page; alternatively, the first and second electrodes may be,
and if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and also perform the following operations:
a preset hot read area and a preset cold read area are determined in a logic area of a memory.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and also perform the following operations:
monitoring the read times aiming at the logic area of the memory;
and determining a preset hot reading area and a preset cold reading area in the logic area according to the monitored reading times.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and after performing the step of determining the preset hot read area and the preset cold read area in the logic area of the memory, further perform the following operations:
and storing the data to be stored in the preset hot reading area or the preset cold reading area of the memory according to the data type of the data to be stored.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and also perform the following operations:
configuring a first data re-reading mechanism corresponding to the preset hot-reading area and configuring a second data re-reading mechanism corresponding to the preset cold-reading area, wherein the first data re-reading mechanism and the second data re-reading mechanism are different in re-reading reference voltage according to each other.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and also perform the following operations:
in the memory, collecting a first re-reading reference voltage when a data page is influenced by reading interference and data is re-read;
and configuring a first data re-reading mechanism corresponding to the preset hot-reading area according to the first re-reading reference voltage.
Further, the processor 1001 may call a data re-reading program of the memory stored in the memory 1005, and also perform the following operations:
collecting a second re-reading reference voltage when the data page is influenced by data retention and data re-reading is carried out in the memory;
and configuring a second data re-reading mechanism corresponding to the preset cold-reading area according to the second re-reading reference voltage.
Based on the above structure, various embodiments of the data re-reading method of the memory of the invention are provided.
It should be noted that, in this embodiment, since data re-reading is currently performed on a data page used for storing data on each physical block inside the memory, the memory generally performs re-reading operation by using the same data re-reading mechanism, regardless of whether the data page is specifically affected by Read Disturb — Read Disturb, or data retention (or referred to as data standing) -data retention, which causes the number of erroneous bits to be higher than a threshold value to trigger data re-reading.
However, since the influence of Read Disturb and data retention on the threshold voltage distribution of the data page is different, the efficiency of the memory for finally performing re-reading by using the same data re-reading mechanism is naturally low. In addition, when a data page needs to be re-Read more due to the type of the stored data, the data page is affected by more Read Disturb, and the data response speed of the whole front end of the memory is reduced when the re-Read efficiency is always low.
In order to solve the above problems, the present application provides a data re-reading method for a memory, which, in a process of performing data re-reading for the memory, once it is detected that the memory triggers data re-reading, immediately determines which logic area in the memory a data page triggering the data re-reading specifically belongs to, wherein the logic area includes a preset hot-reading area and a preset cold-reading area; therefore, if the data page triggering the data rereading is determined to belong to the preset hot reading area, a first data rereading mechanism corresponding to the preset hot reading area is directly called to execute specific data rereading operation aiming at the data page; or, if it is determined that the data page triggering the data re-reading belongs to the preset cold-reading area, directly calling a second data re-reading mechanism corresponding to the preset cold-reading area to perform specific data re-reading operation on the data page.
Compared with the traditional method that the same data re-reading mechanism is adopted to execute the re-reading operation no matter the data re-reading is triggered due to the influence of Read Disturb or the influence of date re-reading, the method and the device call the data re-reading mechanism with higher adaptability to the data page triggering the re-reading to execute the specific data re-reading operation by determining the logic area to which the data page triggering the data re-reading belongs, improve the data re-reading efficiency and further ensure or improve the data response speed of the front end of the memory correspondingly.
Referring to fig. 2, fig. 2 is a flowchart illustrating a data re-reading method of a memory according to a first embodiment of the invention.
The embodiment of the invention provides an embodiment of a data rereading method of a memory, which is applied to the terminal equipment to reread data of the memory based on nand flash as a storage medium. It should be noted that, although a logical order is shown in the flow chart, in some cases, the steps shown or described may be performed in an order different than that shown or described herein.
The data rereading method of the memory comprises the following steps:
step S100, when detecting that a memory triggers data rereading, determining a logic area of a data page triggering the data rereading in the memory;
it should be noted that, in this embodiment, the logic area in the memory may specifically include: a preset hot reading area and a preset cold reading area. The terminal device may be in a memory in advance, and a logic area of the memory may be divided into a preset hot read area for storing hot read data and a preset cold read area for storing cold read data.
When detecting that a certain data page in the memory is affected by reading interference or data retention, and the error bit number is higher than a preset error bit number threshold value to trigger data rereading, the terminal device immediately determines the data page triggering the data rereading in the current memory, specifically, the data page belongs to a preset hot reading area or a preset cold reading area in the memory.
It should be noted that, in this embodiment, the threshold of the number of erroneous bits in the memory for determining whether the data page triggers data re-reading may specifically be the maximum number of erroneous bits in the data page that is autonomously set by the terminal device based on the performance of the memory itself. It should be understood that, based on different design requirements of practical applications, in different possible embodiments, the terminal device may set any different error bit number threshold to determine whether the data page triggers data rereading, and the data rereading method of the memory of the present invention is not limited to a specific size of the error bit number threshold.
Step S200, if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page;
it should be noted that, in this embodiment, the first data re-reading mechanism is specifically a data re-reading mechanism configured in advance to perform a data re-reading operation on a data page in the preset hot-reading area, which is triggered by the influence of the read disturbance.
When the terminal device determines that the data page triggering data rereading in the current memory belongs to the preset hot reading area in the memory, the terminal device further calls a preset first data rereading mechanism corresponding to the preset hot reading area, so that specific data rereading operation is carried out on the data page triggering data rereading due to the influence of reading interference in the preset hot reading area under the first data rereading mechanism.
It should be noted that, in this embodiment, the terminal device may specifically invoke the first data re-reading mechanism to enable the memory to perform a specific data re-reading operation on the data page triggered by the data re-reading due to the read disturbance based on the reference voltage according to the first data memory. It should be understood that, in this embodiment, the operation of the memory to perform the specific data re-reading on the data page based on the reference voltage is not a core of the data re-reading method of the memory of the present invention, and therefore, in this embodiment, too much description is not provided for the specific data re-reading operation.
Step S300, if it is determined that the logic area is a preset cold reading area, invoking a second data re-reading mechanism corresponding to the preset cold reading area to perform a data re-reading operation on the data page.
It should be noted that, in this embodiment, the second data re-reading mechanism is specifically a data re-reading mechanism that is configured in advance to perform a data re-reading operation on a data page in the preset cold-reading area, which is affected by data retention and triggers data re-reading.
When the terminal device determines that the data page triggering data rereading in the current memory belongs to the preset cold reading area in the memory, the terminal device further calls a second data rereading mechanism which is configured in advance and corresponds to the preset cold reading area, so that specific data rereading operation is carried out on the data page triggering data rereading due to the influence of data retention in the preset cold reading area under the second data rereading mechanism.
In this embodiment, when detecting that a certain data page in the memory is affected by read interference or data retention, and the bit number of an error is higher than a preset bit number threshold of the error, and data rereading is triggered, the terminal device immediately determines a data page in the current memory, which triggers the data rereading, specifically belongs to a preset hot read area or a preset cold read area in the memory; when the terminal equipment determines that the data page triggering data rereading in the current memory belongs to a preset hot reading area in the memory, a first data rereading mechanism which is configured in advance and corresponds to the preset hot reading area is further called, so that specific data rereading operation is carried out on the data page triggering data rereading due to the influence of reading interference in the preset hot reading area under the first data rereading mechanism; or when the terminal device determines that the data page triggering data rereading in the current memory belongs to the preset cold reading area in the memory, the terminal device further calls a second data rereading mechanism which is configured in advance and corresponds to the preset cold reading area, so that under the second data rereading mechanism, specific data rereading operation is performed on the data page triggering data rereading due to the influence of data retention in the preset cold reading area.
Compared with the traditional method that the same data rereading mechanism is adopted to execute rereading operation no matter whether the data rereading is triggered due to the influence of read interference or due to the influence of data retention, the method and the device call the data rereading mechanism with higher fitness to the data page triggering rereading to execute specific data rereading operation by determining the logic area to which the data page triggering data rereading belongs, improve the data rereading efficiency and further ensure or improve the data response speed of the front end of the memory correspondingly.
Further, based on the above first embodiment of the data re-reading method of the memory of the present invention, a second embodiment of the data re-reading method of the memory of the present invention is provided. The main difference between the second embodiment of the data re-reading method of the memory of the present invention and the first embodiment is that, in this embodiment, the data re-reading method of the memory of the present invention may further include:
in step S400, a preset hot read area and a preset cold read area are determined in the logic area of the memory.
Before detecting whether a certain data page in the memory triggers data rereading because of being influenced by read interference or data retention, the terminal equipment determines a preset hot read area for storing hot read data and a preset cold read area for storing cold read data in a logic area of the memory.
It should be noted that, in this embodiment, the hot read data may specifically be partial data in which the terminal device frequently performs data reading operations based on the front-end data operation needs, and the cold read data is opposite to the hot read data, and the cold read data may specifically be partial data in which the front-end operation does not need to frequently perform data reading operations.
Further, in a possible embodiment, the step S400 may include:
step S401, performing read frequency monitoring on the logic area of the memory;
step S401, determining a preset hot read area and a preset cold read area in the logic area according to the monitored read times.
The terminal device divides each logic area into a preset hot reading area and a preset cold reading area by monitoring the reading times of the data reading operation of each logic area in the memory.
The terminal equipment continuously monitors the reading times of each logic area of the memory in the whole life cycle of the memory for storing and reading data based on the physical blocks corresponding to each logic area of the memory, and then compares the monitored reading times with a preset reading time threshold value based on the monitored reading times, so that the monitored logic area is divided into a preset hot reading area or a preset cold reading area according to a comparison result.
It should be noted that, in this embodiment, the read time threshold is used to distinguish whether the monitored logic region is a preset hot read region or a preset cold read region. Specifically, for example, assume that the read number threshold for distinguishing whether the monitored logical area is a preset hot read area or a preset cold read area is P. When monitoring that the reading times a of data reading operation executed on the logic area A in the memory by the terminal equipment are greater than the reading time threshold value P, dividing the logic area A into a preset heat reading area for storing heat reading data by the terminal equipment; and when the terminal device monitors that the reading times B of the data reading operation executed in the memory for the logic area B are less than or equal to the reading time threshold value P, the terminal device divides the logic area B into a preset cold reading area for storing cold reading data. It should be understood that, based on different design requirements of practical applications, in different possible embodiments, of course, the read time threshold for distinguishing whether the monitored logic region is the preset hot read region or the preset cold read region may be specifically set to different sizes, and the data re-reading method of the memory of the present invention is not limited to the specific size of the read time threshold.
Further, in a possible embodiment, in step S400, after determining the preset hot read area and the preset cold read area in the logic area of the memory, the data re-reading method of the memory according to the present invention may further include:
step S500, storing the data to be stored in the preset hot reading area or the preset cold reading area of the memory according to the data type of the data to be stored.
It should be noted that, in this embodiment, the data type of the data to be stored may specifically be the above-mentioned hot read data and cold read data, that is, the hot read data is a part of data that the terminal device frequently performs data reading operation based on the front-end data operation requirement, and the cold read data is a part of data that the front-end operation does not need to frequently perform data reading operation.
After the terminal device monitors the reading times of the logic area in the memory, the logic area is divided into a preset hot reading area for storing hot reading data and a preset cold reading area for storing cold reading data, the terminal device firstly determines data to be stored, which need to be stored and written in the memory, specifically, the data to be stored belongs to the hot reading data with frequent reading operation at the front end or the cold reading data without frequent reading operation at the front end, in the process of using the memory to store data in real time, so that when the terminal device determines that the data to be stored belongs to the hot reading data, the terminal device stores the data to be stored to one or more data pages of a corresponding physical block of the preset hot reading area in the memory; or when the terminal equipment determines that the data to be stored belongs to the cold reading data, the data to be stored is stored to one or more data pages of the physical block corresponding to the preset cold reading area in the memory.
In this embodiment, before detecting whether a certain data page in the memory is affected by read interference or data retention to trigger data re-reading, the terminal device determines a preset hot read area for storing hot read data and a preset cold read area for storing cold read data in the logic area of the memory. Then, in the process of using the memory to store data in real time, the terminal device firstly determines data to be stored, which needs to be stored and written in the memory, specifically thermal read data of which the front end frequently performs reading operation, or cold read data of which the front end does not need frequent reading operation, so that when the terminal device determines that the data to be stored belongs to the thermal read data, the terminal device stores the data to be stored in one or more data pages of a corresponding physical block of a preset thermal reading area in the memory; or when the terminal equipment determines that the data to be stored belongs to the cold reading data, the data to be stored is stored to one or more data pages of the physical block corresponding to the preset cold reading area in the memory.
Therefore, when the data page storing the hot reading data subsequently is influenced by reading interference to trigger data rereading, the first data rereading mechanism corresponding to the preset hot reading area is directly called to specifically rereading the data page, or when the data page storing the cold reading data is influenced by data retention to trigger data rereading, the second data rereading mechanism corresponding to the preset cold reading area is directly called to specifically rereading the data page, so that the data rereading efficiency is improved, and the data response speed of the front end of the memory is correspondingly ensured or improved.
Further, based on the above first and second embodiments of the data re-reading method of the memory of the present invention, a third embodiment of the data re-reading method of the memory of the present invention is provided. The main difference between the third embodiment of the data re-reading method of the memory of the present invention and the first embodiment or the second embodiment is that, in this embodiment, the data re-reading method of the memory of the present invention may further include:
step S600, configuring a first data re-reading mechanism corresponding to the preset hot-reading area, and configuring a second data re-reading mechanism corresponding to the preset cold-reading area, where the re-reading reference voltages of the first data re-reading mechanism and the second data re-reading mechanism are different.
After dividing a logic area in a memory into a preset hot reading area for storing hot reading data and a preset cold reading area for storing cold reading data, and before calling a first data re-reading mechanism or a second data re-reading mechanism to perform specific data re-reading operation on a data page triggering data re-reading, the terminal device also respectively configures a first data re-reading mechanism for performing specific re-reading operation on the data page in a physical block corresponding to the preset hot reading area and a second data re-reading mechanism for performing specific re-reading operation on the data page in a physical block corresponding to the preset cold reading area, and respectively establishes a one-to-one correspondence relationship between the first data re-reading mechanism and the preset hot reading area and a one-to-one correspondence relationship between the second data re-reading mechanism and the preset cold reading area. Therefore, when the data page storing the hot read data is influenced by read interference and triggers data rereading, the first data rereading mechanism corresponding to the preset hot read area is directly called to specifically reread the data page, or when the data page storing the cold read data is influenced by data retention and triggers data rereading, the second data rereading mechanism corresponding to the preset cold read area is directly called to specifically reread the data page.
It should be noted that, in this embodiment, the first data re-reading mechanism and the second data re-reading mechanism configured by the terminal device are different in re-reading reference voltage according to which each performs a specific re-reading operation on a data page.
Further, in a possible embodiment, the step S600 may include:
step S601, collecting a first rereading reference voltage when a data page is influenced by read interference to reread data in the memory;
step S602, configuring a first data rereading mechanism corresponding to the preset hot-reading region according to the first rereading reference voltage.
When the terminal device is configured with a first data re-reading mechanism for executing specific re-reading operation on a data page in a physical block corresponding to a preset hot-reading area, first re-reading reference voltage after the data page is subjected to leftward deviation relative to standard reference voltage when the data page is subjected to data re-reading due to the influence of reading interference is collected in a memory. Then, the terminal device sets the first rereading reference voltage as a reference voltage according to which a standard rereading mechanism configured for the memory itself executes a specific rereading operation, that is, replaces the standard reference voltage according to which the standard rereading mechanism executes the specific rereading operation with the first rereading reference voltage, thereby configuring the standard rereading mechanism as a first data rereading mechanism for executing the specific rereading operation on a data page in a physical block corresponding to a preset hot reading area.
It should be noted that, in this embodiment, the terminal device may specifically adopt any mature voltage acquisition mode, and acquire the first rereading reference voltage when the data page is subjected to read disturbance and data rereading is performed. It should be understood that, based on different design requirements of practical applications, in any of different possible embodiments, the terminal device may certainly perform the voltage acquisition operation by using different voltage acquisition manners, and the data re-reading method of the memory of the present invention is not limited to a specific type of the voltage acquisition manner used by the terminal device and a specific process for performing the voltage acquisition operation by the terminal device.
Step S603, in the memory, acquiring a second rereading reference voltage when the data page is influenced by data retention to perform data rereading;
step S604, configuring a second data re-reading mechanism corresponding to the preset cold-reading region according to the second re-reading reference voltage.
When the terminal device is configured with a second data re-reading mechanism for executing specific re-reading operation on the data page in the physical block corresponding to the preset cold-reading area, the second re-reading reference voltage after the data page is shifted leftwards relative to the standard reference voltage when the data page is subjected to data re-reading due to the influence of data retention is collected in the memory. Then, the terminal device sets the second rereading reference voltage as a reference voltage according to which a standard rereading mechanism configured for the memory itself executes a specific rereading operation, that is, replaces the standard reference voltage according to which the standard rereading mechanism executes the specific rereading operation with the second rereading reference voltage, thereby configuring the standard rereading mechanism as a second data rereading mechanism for executing the specific rereading operation on the data page in the physical block corresponding to the preset cold reading area.
It should be noted that, in this embodiment, the same terminal device may specifically adopt any mature voltage acquisition mode, and acquire the second rereading reference voltage when the data page is subjected to read disturbance and data rereading is performed. In addition, when the data page is subjected to data retention and data re-reading, the offset amount of the memory relative to the standard reference voltage shifted to the left is different from the offset amount of the memory relative to the standard reference voltage shifted to the left when the data page is subjected to read disturbance and data re-reading.
In this embodiment, after dividing a logic area in a memory into a preset hot read area for storing hot read data and a preset cold read area for storing cold read data, and before invoking a first data re-reading mechanism or a second data re-reading mechanism to perform a specific data re-reading operation on a data page triggering data re-reading, a first data re-reading mechanism for performing a specific re-reading operation on the data page in a physical block corresponding to the preset hot read area and a second data re-reading mechanism for performing a specific re-reading operation on the data page in a physical block corresponding to the preset cold read area are further configured, and a one-to-one correspondence relationship between the first data re-reading mechanism and the preset hot read area and a one-to-one correspondence relationship between the second data re-reading mechanism and the preset cold read area are respectively established.
Therefore, when the data page storing the hot read data is influenced by read interference and triggers data rereading, the first data rereading mechanism corresponding to the preset hot read area is directly called to specifically reread the data page, or when the data page storing the cold read data is influenced by data retention and triggers data rereading, the second data rereading mechanism corresponding to the preset cold read area is directly called to specifically reread the data page. The data re-reading efficiency is improved, and the data response speed of the front end of the memory is correspondingly ensured or improved.
In addition, referring to fig. 3, an embodiment of the present invention further provides a data rereading apparatus for a memory, including:
a determining module 10, configured to determine, when it is detected that a memory triggers data rereading, a logical area in the memory to which a data page triggering the data rereading belongs;
a first rereading module 20, configured to, if it is determined that the logic area is a preset hot reading area, invoke a first data rereading mechanism corresponding to the preset hot reading area to perform a data rereading operation on the data page; alternatively, the first and second electrodes may be,
and the second rereading module 30 is configured to, if it is determined that the logic area is a preset cold read area, invoke a second data rereading mechanism corresponding to the preset cold read area to perform a data rereading operation on the data page.
Preferably, the determining module 10 of the data re-reading apparatus of the memory of the present invention is further configured to determine a preset hot reading area and a preset cold reading area in the logic area of the memory.
Preferably, the determination module 10 comprises:
a read frequency monitoring unit, configured to monitor read frequencies for the logic area of the memory;
and the determining unit is used for determining a preset hot reading area and a preset cold reading area in the logic area according to the monitored reading times.
Preferably, the data rereading apparatus of the memory of the present invention further comprises:
and the data storage module is used for storing the data to be stored in the preset hot reading area or the preset cold reading area of the memory according to the data type of the data to be stored.
Preferably, the data rereading apparatus of the memory of the present invention further comprises:
and a rereading mechanism configuration module, configured to configure a first data rereading mechanism corresponding to the preset hot reading area and configure a second data rereading mechanism corresponding to the preset cold reading area, where the rereading reference voltages according to which the first data rereading mechanism and the second data rereading mechanism are different from each other.
Preferably, the rereading mechanism configuration module comprises:
the first voltage acquisition unit is used for acquiring a first rereading reference voltage when the data page is influenced by read interference to reread data in the memory;
and the first configuration unit is used for configuring a first data rereading mechanism corresponding to the preset hot reading area according to the first rereading reference voltage.
Preferably, the rereading mechanism configuration module further includes:
the second voltage acquisition unit is used for acquiring a second re-reading reference voltage when the data page is influenced by data retention and data re-reading is carried out in the memory;
and the second configuration unit is used for configuring a second data re-reading mechanism corresponding to the preset cold-reading area according to the second re-reading reference voltage.
The steps implemented by each functional module of the data rereading device of the memory in the invention when the controller runs can refer to the above-mentioned embodiment of the data rereading method of the memory in the invention, and are not described again here.
In addition, an embodiment of the present invention further provides a terminal device, where the terminal device includes: the data rereading program comprises a memory, a processor and a data rereading program of the memory, wherein the data rereading program of the memory is stored on the memory and can run on the processor, and the steps of the data rereading method of the memory are realized when the data rereading program of the memory is executed by the processor.
The steps implemented when the data rereading program of the memory running on the processor is executed may refer to various embodiments of the data rereading method of the memory of the present invention, and are not described herein again.
In addition, an embodiment of the present invention further provides a computer storage medium applied to a computer, where the computer storage medium may be a non-volatile computer-readable computer storage medium, and the computer storage medium stores a data re-reading program of a memory, and the data re-reading program of the memory is executed by a processor to implement the steps of the data re-reading method of the memory described above.
The steps implemented when the data rereading program of the memory running on the processor is executed may refer to various embodiments of the data rereading method of the memory of the present invention, and are not described herein again.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
Through the above description of the embodiments, those skilled in the art will clearly understand that the method of the above embodiments can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but in many cases, the former is a better implementation manner. Based on such understanding, the technical solution of the present invention or portions thereof that contribute to the prior art may be embodied in the form of a software product, where the computer software product is stored in a computer storage medium (e.g., Flash memory, ROM/RAM, magnetic disk, optical disk), and includes several instructions for enabling a controller, which is used for controlling a terminal device (e.g., a mobile phone, a computer, a server, or a network device), to perform data reading and writing operations on the storage medium to execute the method according to the embodiments of the present invention.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A data rereading method of a memory is characterized by comprising the following steps:
when the memory triggering data rereading is detected, determining a logic area of a data page triggering the data rereading in the memory;
if the logic area is determined to be a preset hot reading area, calling a first data re-reading mechanism corresponding to the preset hot reading area to perform data re-reading operation on the data page; alternatively, the first and second electrodes may be,
and if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
2. The data re-reading method of the memory according to claim 1, wherein the method further comprises:
a preset hot read area and a preset cold read area are determined in a logic area of a memory.
3. The data re-reading method of the memory according to claim 2, wherein the step of determining a preset hot read area and a preset cold read area in the logical area of the memory comprises:
monitoring the read times aiming at the logic area of the memory;
and determining a preset hot reading area and a preset cold reading area in the logic area according to the monitored reading times.
4. The data rereading method for a memory of claim 2, further comprising, after the step of determining a preset hot read area and a preset cold read area in the logical area of the memory:
and storing the data to be stored in the preset hot reading area or the preset cold reading area of the memory according to the data type of the data to be stored.
5. The data re-reading method of the memory according to any one of claims 1 to 4, further comprising:
configuring a first data re-reading mechanism corresponding to the preset hot-reading area and configuring a second data re-reading mechanism corresponding to the preset cold-reading area, wherein the first data re-reading mechanism and the second data re-reading mechanism are different in re-reading reference voltage according to each other.
6. The method for data re-reading of the memory according to claim 5, wherein the step of configuring the first data re-reading mechanism corresponding to the preset hot-reading area comprises:
in the memory, collecting a first re-reading reference voltage when a data page is influenced by reading interference and data is re-read;
and configuring a first data re-reading mechanism corresponding to the preset hot-reading area according to the first re-reading reference voltage.
7. The method for data re-reading of the memory according to claim 5, wherein the step of configuring the second data re-reading mechanism corresponding to the preset cold-reading area comprises:
collecting a second re-reading reference voltage when the data page is influenced by data retention and data re-reading is carried out in the memory;
and configuring a second data re-reading mechanism corresponding to the preset cold-reading area according to the second re-reading reference voltage.
8. A data rereading apparatus for a memory, comprising:
the determining module is used for determining a logic area of a data page triggering data rereading in the memory when the memory triggering data rereading is detected;
the first rereading module is used for calling a first data rereading mechanism corresponding to a preset hot reading area to perform data rereading operation on the data page if the logic area is determined to be the preset hot reading area; alternatively, the first and second electrodes may be,
and if the logic area is determined to be a preset cold reading area, calling a second data re-reading mechanism corresponding to the preset cold reading area to perform data re-reading operation on the data page.
9. A terminal device, characterized in that the terminal device comprises: memory, a processor and a data rereading program of the memory stored on the memory and executable on the processor, the data rereading program of the memory implementing the steps of the data rereading method of the memory according to any one of claims 1 to 7 when executed by the processor.
10. A computer storage medium, characterized in that the computer storage medium has stored thereon a computer program which, when being executed by a processor, carries out the steps of the data re-reading method of the memory according to one of claims 1 to 7.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111400099A (en) * | 2020-03-16 | 2020-07-10 | 深圳佰维存储科技股份有限公司 | Data re-reading method, device and equipment of flash memory and computer readable storage medium |
| CN111638993A (en) * | 2020-05-12 | 2020-09-08 | 合肥康芯威存储技术有限公司 | Error correction method for storage medium, system using same and storage system |
| CN112527203A (en) * | 2020-12-14 | 2021-03-19 | 深圳市硅格半导体有限公司 | Data rewriting method and system of flash memory, terminal device and storage medium |
| CN112634973A (en) * | 2020-12-29 | 2021-04-09 | 合肥致存微电子有限责任公司 | Data rereading method and system of storage medium, terminal device and storage medium |
| CN113157486A (en) * | 2021-05-26 | 2021-07-23 | 中国科学院微电子研究所 | Error correction method and device for memory |
-
2021
- 2021-09-16 CN CN202111089578.5A patent/CN113961143A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111400099A (en) * | 2020-03-16 | 2020-07-10 | 深圳佰维存储科技股份有限公司 | Data re-reading method, device and equipment of flash memory and computer readable storage medium |
| CN111638993A (en) * | 2020-05-12 | 2020-09-08 | 合肥康芯威存储技术有限公司 | Error correction method for storage medium, system using same and storage system |
| CN112527203A (en) * | 2020-12-14 | 2021-03-19 | 深圳市硅格半导体有限公司 | Data rewriting method and system of flash memory, terminal device and storage medium |
| CN112634973A (en) * | 2020-12-29 | 2021-04-09 | 合肥致存微电子有限责任公司 | Data rereading method and system of storage medium, terminal device and storage medium |
| CN113157486A (en) * | 2021-05-26 | 2021-07-23 | 中国科学院微电子研究所 | Error correction method and device for memory |
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