CN113948497A - Testing module and testing method for reflectivity thermal imager - Google Patents
Testing module and testing method for reflectivity thermal imager Download PDFInfo
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- CN113948497A CN113948497A CN202111027584.8A CN202111027584A CN113948497A CN 113948497 A CN113948497 A CN 113948497A CN 202111027584 A CN202111027584 A CN 202111027584A CN 113948497 A CN113948497 A CN 113948497A
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- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
The invention relates to the technical field of semiconductor temperature measurement, and discloses a testing module and a testing method for a reflectivity thermal imager, which comprises a first testing sample area, wherein the first testing sample area comprises a plurality of metal wires which are distributed at different intervals, two ends of each metal wire are provided with bonding pads, and the sizes of the metal wires are the same; and the first power module is connected with the bonding pads of any two adjacent metal wires and used for providing a first test electric signal for any two adjacent metal wires. The testing module of the reflectivity thermal imager can test and verify the key indexes of the reflectivity thermal imager, so that the testing performance of the reflectivity thermal imager can be further researched and improved.
Description
Technical Field
The invention relates to the technical field of semiconductor temperature measurement, in particular to a testing module and a testing method for a reflectivity thermal imager.
Background
With the development of the fields of aerospace, industrial traffic, 5G communication, new energy and the like, higher performance and reliability requirements are continuously put forward for power devices. The temperature data is used as a key index for evaluating the performance of the power device, and is an important basis for carrying out the work of thermal management, reliability evaluation and device performance optimization design of the power device. As semiconductor devices continue to rapidly evolve in the direction of high speed, high density, high power applications, test verification of integrated circuits also presents high time, high space, and high sensitivity detection requirements.
The reflectivity thermal imaging technology utilizes the function relation of the material light wave reflectivity along with the temperature change to obtain the temperature distribution of the integrated circuit semiconductor device. Theoretically, the reflectivity thermal imaging test technology can realize the temperature measurement capability of spatial resolution below 0.5um, time resolution below 100ns and temperature resolution at 0.5 ℃, and is suitable for submicron-level thermal distribution detection of third-generation half-power devices represented by GaN. However, at the present stage, the research work on the verification of the technical indexes of the temperature testing system is less, and a testing method for verifying the temperature measurement indexes of the reflectivity thermal imaging equipment is lacked.
Disclosure of Invention
Therefore, it is necessary to provide a reflectance thermal imaging instrument test module and a test method for solving the problem that the verification work for the reflectance thermal imaging device index is relatively few at the present stage.
A testing module of a reflectivity thermal imager comprises a first testing sample area, wherein the first testing sample area comprises a plurality of metal wires which are distributed at different intervals, bonding pads are arranged at two ends of each metal wire, and the sizes of the metal wires are the same; and the first power module is connected with the bonding pads of any two adjacent metal wires and used for providing a first test electric signal for any two adjacent metal wires.
Above-mentioned reflectivity thermal imager test module is provided with the metal wire array that has different size interval in the first test sample region, and the spaced distance between arbitrary two adjacent metal wires is all inequality. The shape and size of each metal wire in the metal wire array are the same. The first power module can be connected with any two adjacent metal wires and outputs a first test electric signal to the two metal wires. The two metal wires generate heat due to the first test electric signal, the metal wire array is imaged and identified by using the reflectivity thermal imager, and the spatial resolution of the reflectivity thermal imager is determined according to the identification result of the reflectivity thermal imager on the two metal wires. The testing module of the reflectivity thermal imager can test and verify the key indexes of the reflectivity thermal imager, so that the testing performance of the reflectivity thermal imager can be further researched and improved.
In one embodiment, the reflectance thermal imager test module further comprises a second test sample region, the second test sample region comprises a predetermined test interconnect structure, and pads are disposed at two ends of the predetermined test interconnect structure; and the second power module is connected with the pad of the preset test interconnection structure and used for providing a second test electrical signal for the preset test interconnection structure.
In one embodiment, the predetermined test interconnect structure comprises a spiral metal interconnect structure.
In one embodiment, the spiral metal interconnection structure is made of a metal material with a preset thermal expansion coefficient.
In one embodiment, the reflectivity thermal imager test module further comprises a third test sample area, the third test sample area comprises a test resistor, and two ends of the test resistor are respectively connected with the two bonding pads at intervals of a preset distance; and the third power module is connected with the bonding pads at two ends of the test resistor and used for providing a third test electric signal for the test resistor.
A method for testing a reflectance thermal imager, applied to the reflectance thermal imager test module according to any one of the above embodiments, the method comprising controlling the reflectance thermal imager to irradiate a first test sample area with a first incident light source; applying a first test electrical signal to two adjacent metal strips in the first test sample area, wherein the two adjacent metal strips are separated by different distances, so that the two metal strips generate heat; controlling the reflectivity thermal imager to carry out focusing imaging on the metal strip in the first test sample area; and identifying the minimum distance between the two metal wires according to the reflectivity thermal imager, and judging the spatial resolution of the reflectivity thermal imager.
In one embodiment, after determining the spatial resolution of the reflectance thermal imager based on the minimum distance of separation between the two metal lines identified by the reflectance thermal imager, the method further comprises controlling the reflectance thermal imager to illuminate a second test sample area with a second incident light source; applying a second test electrical signal to a predetermined test interconnect structure in the second test sample area; changing the value of the second test electrical signal to enable the preset test interconnection structure to have temperature change; controlling the reflectivity thermal imager to judge the temperature change condition of the preset test interconnection structure; and identifying the minimum temperature variation amplitude of the preset test interconnection structure according to the reflectivity thermal imager, and judging the temperature sensitivity of the reflectivity thermal imager.
In one embodiment, before controlling the reflectance thermal imager to irradiate the second test sample area with a second incident light source, the method further comprises adjusting a test bed temperature of the reflectance thermal imager, and calibrating a reflectance calibration coefficient of the reflectance thermal imager for the predetermined test interconnect structure; and calibrating the identification result of the temperature change condition by the reflectivity thermal imager according to the reflectivity calibration coefficient.
In one embodiment, after applying a second test electrical signal to a predetermined test interconnect structure in the second test sample region, the method further comprises measuring a first voltage drop across the predetermined test interconnect structure, calculating a first resistance value of the predetermined test interconnect structure; after changing the value of the second test electrical signal to enable the temperature of the preset test interconnection structure to change, measuring a second voltage drop at two ends of the preset test interconnection structure, and calculating a second resistance value of the preset test interconnection structure; and determining the temperature difference at the moment of measuring the resistance values twice based on the relationship between the resistivity of the metal material and the temperature according to the first resistance value and the second resistance value.
In one embodiment, after determining the spatial resolution of the reflectance thermal imager based on the minimum distance of separation between two metal lines identified by the reflectance thermal imager, the method further comprises controlling the reflectance thermal imager to illuminate a third test sample area with a third incident light source; applying a third test electrical signal to the test resistance in the third test sample region; controlling the reflectivity thermal imager to carry out focusing imaging on the test resistor; changing the value of the third test electrical signal to change the heating power of the test resistor; and judging the hot spot power detection capability of the reflectivity thermal imager according to the minimum heating power of the reflectivity thermal imager, wherein the testing resistance is identified as a hot spot.
Drawings
In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the specification, and other drawings can be obtained by those skilled in the art without inventive labor.
Fig. 1 is a schematic structural diagram of a reflectance thermal imager test module according to an embodiment of the disclosure;
FIG. 2 is a schematic structural view of a second test sample region according to one embodiment of the present disclosure;
FIG. 3 is a schematic structural view of a third test sample region according to one embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating an overall structure of a test module according to an embodiment of the disclosure;
FIG. 5 is a flowchart illustrating a method for testing a thermal imaging reflectance meter according to an embodiment of the present disclosure;
FIG. 6 is a schematic flow chart illustrating a method for verifying temperature sensitivity according to an embodiment of the present disclosure;
FIG. 7 is a timing diagram of a verification temperature sensitivity test circuit according to an embodiment of the present disclosure;
FIG. 8 is a schematic flow chart illustrating a method for calculating an actual temperature difference of a predetermined test interconnect structure according to an embodiment of the present disclosure;
fig. 9 is a flowchart illustrating a method for verifying hot spot power detection capability according to an embodiment of the disclosure.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "left," "right," "upper," "lower," "front," "rear," "circumferential," and the like are based on the orientation or positional relationship shown in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The reflectivity thermal imaging technology utilizes the function relation of the material light wave reflectivity along with the temperature change to obtain the temperature distribution of the integrated circuit semiconductor device. However, the verification work for the temperature measurement index of the reflectivity thermal imaging device is relatively few at the present stage, and a complete testing method has not been formed in the industry.
The method aims at the problems that in the prior art, only the temperature measurement accuracy of reflectivity thermal imaging is verified, and verification tests on other key indexes of reflectivity thermal imaging equipment are lacked. The present disclosure provides a reflectance thermal imager test module. Fig. 1 is a schematic structural diagram of a reflectance thermal imaging system test module according to an embodiment of the present disclosure, in which the reflectance thermal imaging system test module includes a first test sample area 100. The first test sample area 100 may include a metal line 110 and a first power module 120 therein. In some embodiments of the present disclosure, the first test sample area 100 may be disposed on a PCB board or substrate material surface.
The first test sample area 100 includes a plurality of metal lines 110, and the plurality of metal lines 110 are arranged at different intervals to form a metal line array. Each of the metal lines 110 in the metal line array has the same shape and size. Since the existing reflectivity thermal imaging technology can realize the detection of the thermal distribution in the submicron order, the performance of the reflectivity thermal imager is tested by using the metal wire 110 with the size in the micron order. In some embodiments of the present disclosure, the metal lines 110 are all 4000um long and 10um wide.
Since the metal lines 110 are small in size, the operation difficulty of connecting the metal lines 110 with the first power module 120 is large, and therefore, pads are provided at both ends of each metal line 110, so as to facilitate the connection of the metal lines 110 into the first power module 120. In some embodiments of the present disclosure, gold (Au) is used as a material for forming the metal line 110, and in some other embodiments, other metal materials having high conductive properties may be used as a material for forming the metal line 110. In some embodiments of the present disclosure, gold (Au) or other metal material with high conductive performance may also be used as a material for preparing the bonding pad.
The first power module 120 may be connected to pads of any two adjacent metal lines 110 in the metal line array for providing the first test electrical signal to any two adjacent metal lines 110. In some embodiments of the present disclosure, the first power module 120 includes a test current source. The power current output by the first power module 120 flows through the two metal wires 110, and the two metal wires 110 will generate heat, so that the reflectivity thermal imager can obtain the temperature distribution on the two metal wires 110 according to the function relation of the material light wave reflectivity along with the temperature change. Further, the spatial resolution of the two metal lines 110 can be determined according to the imaging effect of the reflectance thermal imager on the two metal lines.
The distances between any two adjacent metal wires in the metal wire array and other adjacent metal wires are different. In some embodiments of the present disclosure, the metal line array includes 11 metal lines, and the distances between adjacent metal lines are respectively 0.1um, 0.25um, 0.5um, 1um, 2um, 5um, 10um, 25um, 50um, 100um in sequence. In order to facilitate the tester to record data during testing, the distances among all the metal wires can be marked through the scales, so that the tester can more conveniently and intuitively determine the distance between two adjacent metal wires to be tested.
Based on the principle that the spatial resolution is limited by the diffraction limit, the reflectivity thermal imager can be used for imaging and identifying the heating of two adjacent metal wires with different spacing distances, and the spatial resolution of the reflectivity thermal imager is determined according to the identification effect. For example, when the reflectivity thermal imager images two metal lines with a spacing distance of 0.5um and then can clearly identify that two adjacent metal lines exist in the image, it is determined that the identification accuracy of the reflectivity thermal imager is less than 0.5 um.
By providing metal line arrays with different sizes in the first test sample area 100, the distances between any two adjacent metal lines 110 are different, and the shape and size of each metal line 110 in the metal line array are the same. And imaging and identifying the metal wire array by using a reflectivity thermal imager, and determining the spatial resolution of the reflectivity thermal imager according to the identification result of the reflectivity thermal imager on the two metal wires. The testing module for the reflectivity thermal imager can be used for testing the spatial resolution of the reflectivity thermal imager, so that the spatial resolution of the reflectivity thermal imager can be further researched and improved based on a verification result.
Fig. 2 is a schematic structural diagram of a second test sample area according to an embodiment of the present disclosure, in which the reflectance thermal imager test module further includes a second test sample area 200. The second test sample area 200 may include a predetermined test interconnect structure 210 and a second power module 220 therein. In some embodiments of the present disclosure, the second test sample area 200 may be disposed on a PCB board or substrate material surface.
Similarly, since the current reflectance thermal imaging technology can achieve submicron-scale thermal distribution detection, the reflectance thermal imager is tested using the predetermined test interconnect structure 210 with a dimension on the micron scale. Since the size of the predetermined test interconnection structure 210 is small, the operation difficulty of connecting the predetermined test interconnection structure 210 and the second power module 220 is large, and therefore, pads are disposed at both ends of the predetermined test interconnection structure 210. The lead-in terminal pin at one end of the predetermined test interconnect structure 210 is connected to one pad, and the lead-out terminal pin at the other end of the predetermined test interconnect structure 210 is connected to another pad. In some embodiments of the present disclosure, gold (Au) or other metal material with high conductive performance may be used as a material for preparing the bonding pad.
The second power module 220 may be connected to pads at both ends of the predetermined test interconnect structure 210 for providing a second test electrical signal to the predetermined test interconnect structure 210. In some embodiments of the present disclosure, the second power module 220 includes a power pulse current source and a test pulse current source. Two pulse current sources are simultaneously connected to the pads of the predetermined test interconnect structure 210, the test pulse current source is configured to output a smaller current to the predetermined test interconnect structure 210 to perform a pulse voltage test on the predetermined test interconnect structure 210, and the power pulse current source is configured to output a larger current to the predetermined test interconnect structure 210 to apply a power pulse thereto, thereby heating the predetermined test interconnect structure 210. According to the principle that the heating conditions of the predetermined test interconnect structure 210 are different under different powers, the temperature of the predetermined test interconnect structure 210 can be changed by changing the power current flowing through the predetermined test interconnect structure 210.
In some embodiments of the present disclosure, the second test sample area 200 may further include a "four-point method" test circuit, which is used to measure a voltage drop across the predetermined test interconnect structure 210 and calculate a resistance value of the predetermined test interconnect structure 210 at temperature. Based on the linear relationship between the resistivity of the metal material and the temperature, the actual temperature change of the predetermined test interconnect structure 210 may be calibrated according to the resistance change of the predetermined test interconnect structure 210.
Meanwhile, the temperature of the preset test interconnection structure 210 is synchronously monitored by using a reflectivity thermal imager, and the temperature sensitivity of the reflectivity thermal imager is determined according to the minimum temperature variation range of the preset test interconnection structure 210, which can be monitored by the reflectivity thermal imager. The testing module for the reflectivity thermal imager can be used for testing the temperature sensitivity of the reflectivity thermal imager, so that the temperature sensitivity of the reflectivity thermal imager can be further researched and improved based on a verification result.
In one embodiment, the predetermined test interconnect structure 210 comprises a spiral metal interconnect structure. Under the condition that the external pressure is unchanged, the volume of the spiral metal interconnection structure is increased when the temperature is increased, and the thermal expansion condition of the spiral metal interconnection structure is in a positive correlation with the temperature. Therefore, in addition to measuring the voltage drop across the preset test interconnect structure 210 by using a "four-point method" test circuit and calculating the resistance value of the preset test interconnect structure 210 at the temperature to determine the resistance change of the preset test interconnect structure 210, the resistance change of the spiral metal can also be calibrated according to the expansion condition of the volume of the spiral metal interconnect structure, so as to calibrate the actual temperature change condition of the spiral metal interconnect structure.
In some other embodiments of the present disclosure, the resistance variation of the predetermined test interconnect structure 210 measured in the "four-point method" test circuit may also be verified according to the volume expansion of the spiral metal interconnect structure.
In one embodiment, the spiral metal interconnect structure is made of a metal material having a predetermined thermal expansion coefficient. The metal material with higher thermal expansion coefficient is used as the preparation material of the spiral metal interconnection structure, so that the resistance value change of the spiral metal interconnection structure can be accurately calibrated according to the expansion condition of the spiral metal interconnection structure, and the detection accuracy of the temperature sensitivity of the reflectivity thermal imager is improved.
Fig. 3 is a schematic structural diagram of a third test sample area according to an embodiment of the present disclosure, in which the reflectance thermal imager test module further includes a third test sample area 300. A third test sample area 300 may include a test resistor 310 and a third power module 320. In some embodiments of the present disclosure, the third test sample area 300 may also be disposed on a PCB board or substrate material surface. Both ends of the test resistor 310 are connected to the two pads at a predetermined distance, respectively. The third power module 320 is connected to pads at both ends of the test resistor 310 for providing a third test electrical signal to the test resistor 310.
In some embodiments of the present disclosure, the test resistor 310 may be a miniature square resistor. Similarly, since the current reflectivity thermal imaging technology can realize the detection of the thermal distribution in the submicron level, the reflectivity thermal imaging instrument is tested by using the micro resistor with the dimension in the submicron level. Since the test resistor 310 has a small size, the operation difficulty of connecting the test resistor 310 and the third power module 320 is high, and thus, two ends of the test resistor 310 are connected to two pads at a predetermined distance.
In some embodiments of the present disclosure, the two pads in the third test sample area 300 may be mid-axis symmetric pads. The preparation material of the bonding pad can adopt gold (Au) or other metal materials with high conductive performance. The two pads are spaced apart from each other by a certain distance, the test resistor 310 is disposed between the two pads, and the two pads are connected through the test resistor 310.
When the hot spot power detection capability verification test is performed on the reflectivity thermal imager, the heating power on the test resistor 310 needs to be continuously reduced, so that the hot spot image displayed by the test resistor 310 is continuously reduced, and the hot spot power detection capability of the reflectivity thermal imager can be judged according to the detection result of the reflectivity thermal imager. Therefore, the test resistor 310 needs to be spaced apart from the pad by a suitable distance to prevent the pad from affecting the test resistor 310, and thus affecting the accuracy of the test result.
A third power module 320 may be connected to pads at both ends of the test resistance 310 for providing a third test electrical signal to the test resistance 310. In some embodiments of the present disclosure, the third power module 320 may include a pulsed current source. The pulse current output by the third power module 320 is sent to the test resistor 310 to heat it and form a hot spot. The third power module 320 may control the heating power of the test resistor 310 by varying the amount of current applied across the test resistor 310, thereby varying the hot spot size of the test resistor 310.
Meanwhile, the reflectivity thermal imager is used for carrying out thermal imaging on the test resistor 310 under different heating powers, and the minimum hot spot detection power of the reflectivity thermal imager is determined according to the hot spot detection condition of the reflectivity thermal imager. Further, the hot spot power detection capability of the two metal lines 110 can be judged according to the imaging effect of the reflectivity thermal imager on the two metal lines. The testing module for the reflectivity thermal imager can test the hot spot power detection capability of the reflectivity thermal imager, so that the hot spot power detection capability of the reflectivity thermal imager can be further researched and improved based on a verification result.
The present disclosure provides a test module for verifying technical indexes of a reflectivity thermal imager, as shown in fig. 4, fig. 4 is a schematic view of an overall structure of the test module according to an embodiment of the present disclosure. The test module comprises three sample test areas which can be respectively used for testing the spatial resolution, the temperature resolution and the hot spot detection power of the reflectivity thermal imager.
By setting the metal line arrays with different sizes and spacings in the first test sample area 100 in the test module, the spatial resolution of the reflectivity thermal imager can be determined according to the imaging recognition condition of the reflectivity thermal imager on the metal line arrays.
The spiral metal interconnection structure is designed in the second test sample area 200 in the test module based on the linear relation between the resistivity and the temperature of the metal material, the actual temperature rise can be calibrated according to the resistance change of the spiral metal, and meanwhile, the temperature sensitivity of the reflectivity thermal imager is determined by combining the temperature rise recognition condition of the reflectivity thermal imager on the spiral metal interconnection structure.
Two pads with high conductivity in a third test sample area 300 in the test module are connected with two ends of the micro resistor, and the hot spot power detection capability of the reflectivity thermal imager is determined according to the thermal imaging result of the reflectivity thermal imager on the micro resistor under different heating powers.
The testing module of the reflectivity thermal imager can solve the problem that key indexes such as spatial resolution, temperature resolution and hotspot detection power of the reflectivity thermal imager in the prior art are difficult to test and verify.
The present disclosure also provides a method for testing a reflectivity thermal imager, which is applied to the reflectivity thermal imager testing module according to any one of the above embodiments. Fig. 5 is a flowchart illustrating a method for testing a thermal imaging reflectance camera according to an embodiment of the disclosure, wherein in an embodiment, the method for testing a thermal imaging reflectance camera includes the following steps S110 to S140.
Step S110: a controlled reflectance thermal imager illuminates a first test sample area with a first incident light source.
The samples to be detected made of different materials have different reflection effects on the same incident light source, so that the appropriate incident light source can be selected according to the materials of the samples to be detected. For example, a light source having a wavelength of 480nm to 530nm is generally selected as an incident light source for a gold (Au) material. Selecting a first incident light source based on the material of the metal wire array, placing a first test sample area 100 of the reflectivity thermal imager test module in the test area of the reflectivity thermal imager, and irradiating the first test sample area 100 by using the first incident light source.
Step S120: and applying a first test electric signal to two adjacent metal strips which are separated by different distances in the first test sample area so as to heat the two metal strips.
Step S130: and controlling a reflectivity thermal imager to carry out focusing imaging on the metal strip in the first test sample area.
Step S140: and identifying the minimum distance between the two metal wires according to the reflectivity thermal imager, and judging the spatial resolution of the reflectivity thermal imager.
The first power module 120 may be connected to pads of any two metal lines 110 in the metal line array to output a first test electrical signal to the two metal lines 110. The power current output by the first power module 120 flows through the two metal wires 110, and the two metal wires 110 will generate heat, so that the reflectivity thermal imager can determine the temperature distribution on the two metal wires 110 according to the function relation of the material light wave reflectivity changing with the temperature, thereby obtaining the thermal imaging picture. When the reflectance thermal imager is used to focus the first test sample area 100, the lens with the highest magnification may be selected.
In one embodiment, the test may be started with two adjacent metal lines that are most distant from each other, and gradually spaced toward each other by the nearest two adjacent metal lines. The first power module 120 may output a first test electrical signal to two metal lines 110 spaced apart by a distance of 100 um. The first test sample area 100 is imaged using the highest magnification lens. If the thermal image obtained by focusing the device clearly identifies that there are two adjacent metal lines 110 in the image, the first power module 120 is enabled to output the first test electrical signal to the two metal lines 110 spaced apart by 50 um. And adjusting the position of the test platform or moving the position of a detector of the reflectivity thermal imager, and gradually carrying out focusing imaging observation on two metal wire areas with an adjacent distance of 0.1um from two metal wires with an adjacent distance of 100um respectively.
Repeating the above steps until the boundary of the two metal lines 110 in the thermal imaging picture obtained according to the focusing of the device is no longer obvious, and the two adjacent metal lines 110 in the picture cannot be identified, and then judging that the spatial resolution of the device is greater than the spacing distance between the two metal lines 110 at this time.
For example, when the distance between two metal lines 110 of the first power module 120 outputting the first test electrical signal is 2um, two adjacent metal lines 110 in the graph can be identified according to the thermal imaging picture obtained by the reflectance thermal imager, and when the distance between two metal lines 110 of the first power module 120 outputting the first test electrical signal is 1um, the thermal imaging picture obtained by the reflectance thermal imager cannot identify two adjacent metal lines 110 in the graph, and it is determined that the spatial resolution of the reflectance thermal imager is greater than 1 um.
The testing method of the reflectivity thermal imager can be used for testing the spatial resolution of the reflectivity thermal imager, so that the spatial resolution of the reflectivity thermal imager can be further researched and improved based on the verification result.
Fig. 6 is a flowchart illustrating a method for verifying temperature sensitivity according to an embodiment of the disclosure, in which in one embodiment, after the spatial resolution of the reflectance thermal imager is determined according to the minimum distance between two metal lines identified by the reflectance thermal imager, the method further includes steps S210 to S250 as follows.
Step S210: the reflectance thermal imager is controlled to illuminate a second test sample area with a second incident light source.
Similarly, samples to be detected of different materials have different reflection effects on the same incident light source, so that a proper incident light source can be selected according to the material of the sample to be detected. Selecting a second incident light source based on the material of the preset test interconnection structure, placing a second test sample area 200 of the reflectivity thermal imager test module in the test area of the reflectivity thermal imager, and irradiating the second test sample area 200 by using the second incident light source.
Step S220: a second test electrical signal is applied to the predetermined test interconnect structure in the second test sample area.
In some embodiments of the present disclosure, the second power module 220 may apply a second test electrical signal to the predetermined test interconnect structure 210 in the second test sample area, the second test electrical signal flows through the predetermined test interconnect structure 210, and the predetermined test interconnect structure 210 will heat up. The temperature of the predetermined test interconnect structure 210 at this time is measured, and the initial temperature of the predetermined test interconnect structure 210 is determined.
In some other embodiments, the initial temperature of the temperature controller in the reflectance thermal imager may be set to T after the second test sample area 200 is placed in the test area of the reflectance thermal imager0So that the initial temperature of the predetermined test interconnect structure 210 is T0。
Step S230: and changing the value of the second test electrical signal to enable the preset test interconnection structure to have temperature change.
In some embodiments of the present disclosure, the predetermined test interconnect structure 210 may be subjected to a temperature change by changing a value of the second test electrical signal.
In some other embodiments, after the temperature of the temperature controller is stabilized, the second power module 220 outputs the second test electrical signal to the predetermined test interconnect structure 210 in the second test sample area 200, so that the predetermined test interconnect structure 210 completes the temperature raising and lowering process.
Step S240: and controlling the reflectivity thermal imager to judge the temperature change condition of the preset test interconnection structure.
After the second test sample area 200 of the reflectivity thermal imager test module is placed in the test area of the reflectivity thermal imager, a lens with a proper magnification is simultaneously selected to synchronously monitor the second test sample area 200.
Step S250: and identifying the minimum temperature change amplitude of the preset test interconnection structure according to the reflectivity thermal imager, and judging the temperature sensitivity of the reflectivity thermal imager.
The temperature of the preset test interconnect structure 210 is tested before and after the temperature of the preset test interconnect structure 210 changes, and the actual temperature change value of the preset test interconnect structure 210 is determined. And (3) synchronously testing the real-time temperature change of the second test sample area 200 by adopting a reflectivity thermal imager, reducing the change degree of the second test electrical signal when the reflectivity thermal imager can test the temperature change of the preset test interconnection structure 210, repeating the steps, and testing the resolution capability of the reflectivity thermal imager on the temperature change under the condition that the actual temperature change value is smaller. And identifying the minimum temperature variation amplitude of the preset test interconnection structure by the reflectivity thermal imager, and determining the minimum temperature variation amplitude as the temperature sensitivity of the reflectivity thermal imager.
For example, when the actual temperature variation range is Δ T1, the thermal imager may recognize that the temperature on the predetermined test interconnect structure 210 has changed, and when the actual temperature variation range is Δ T2(Δ T1> Δ T2), the thermal imager cannot recognize that the temperature on the predetermined test interconnect structure 210 has changed, and the temperature sensitivity of the thermal imager is determined to be Δ T1. The testing module for the reflectivity thermal imager can be used for testing the temperature sensitivity of the reflectivity thermal imager, so that the temperature sensitivity of the reflectivity thermal imager can be further researched and improved based on a verification result.
In one embodiment, before controlling the reflectance thermal imager to irradiate the second test sample area with the second incident light source, the method further includes adjusting a temperature of a test table of the reflectance thermal imager, calibrating a reflectance calibration coefficient of the reflectance thermal imager for the predetermined test interconnect, and calibrating a temperature variation condition of the reflectance thermal imager according to the reflectance calibration coefficient.
Since the reflectivity of the same material to incident light is different at different temperatures, the reflectivity calibration coefficient Cth of the preset test interconnection structure 210 can be calibrated in advance, so that the identification effect of the reflectivity thermal imager can be calibrated according to the reflectivity calibration coefficient Cth, and the calibration accuracy is improved. For the case where the test station of the reflectivity thermal imager is at different temperatures, the reflectivity of the reflectivity thermal imager for the predetermined test interconnect structure 210 is tested. Further, the reflectivity calibration coefficient Cth of the preset test interconnection structure 210 is calibrated according to the reflectivity of the reflectivity thermal imager to the preset test interconnection structure 210 at different temperatures. In some embodiments of the present disclosure, the reflectivity of the thermal imager for the predetermined test interconnect structure 210 at a temperature of not less than 2 points is obtained to calibrate the reflectivity calibration coefficient Cth of the predetermined test interconnect structure 210.
In one embodiment, after applying the second test electrical signal to the predetermined test interconnect structure in the second test sample region, the method further includes measuring a first voltage drop across the predetermined test interconnect structure and calculating a first resistance value of the predetermined test interconnect structure. After the second test sample area 200 is placed in the test area of the reflectance thermal imager, the initial temperature of the temperature controller in the reflectance thermal imager is set to T0So that the initial temperature of the predetermined test interconnect structure 210 is T0。
In some embodiments of the present disclosure, the second power module 220 includes a power pulse current source and a test pulse current source. Two pulse current sources are simultaneously connected to the pads of the predetermined test interconnect structure 210, the test pulse current source is configured to output a smaller current to the predetermined test interconnect structure 210 to perform a pulse voltage test on the predetermined test interconnect structure 210, and the power pulse current source is configured to output a larger current to the predetermined test interconnect structure 210 to load a power pulse to the predetermined test interconnect structure 210, thereby heating the predetermined test interconnect structure 210.
The test pulse current power supply, the power pulse current source and the reflectivity thermal imager perform signal synchronization, and the signal timing sequences of the two pulse current sources are specifically shown in fig. 7. FIG. 7 is a timing diagram of a verification temperature sensitivity test circuit according to an embodiment of the disclosure. In the present embodiment, at t0The moment test pulse current power supply outputs a pulse current Ia with a smaller value to the preset test interconnection structure 210 so as to perform pulse voltage test on the preset test interconnection structure 210, and reads and records the voltmeter t0The first voltage drop across the test interconnect structure 210 is preset at a time. Calculating the temperature T based on the pulse current Ia and the first voltage drop0While the first resistance value R of the test interconnect structure 210 is preset0。
Fig. 8 is a flowchart illustrating a method for calculating an actual temperature difference of a predetermined test interconnect structure according to an embodiment of the disclosure, where after the value of the second test electrical signal is changed to cause a temperature change of the predetermined test interconnect structure, the method further includes steps S231 to S233.
Step S231: and measuring a second voltage drop at two ends of the preset test interconnection structure, and calculating a second resistance value of the preset test interconnection structure.
Upon completion of the initial resistance value R to the predetermined test interconnect structure 2100After the test, the current source is switched to the power pulse current source, and the power pulse current source outputs a larger current to the predetermined test interconnect structure 210 to load the power pulse to the predetermined test interconnect structure 210, so that the predetermined test interconnect structure 210 completes the temperature rise process. At t1At the moment when the power pulse current introduced into the predetermined test interconnect structure 210 is switched from the high level to the low level, the current source on the predetermined test interconnect structure 210 is switched to the test pulse current source. The test pulse current source is used again to output a pulse current Ia with a smaller value to the preset test interconnection structure 210 so as to perform a pulse voltage test on the preset test interconnection structure 210, and the voltmeter t is read and recorded0The second voltage drop across the test interconnect structure 210 is preset at a time. Calculating a second resistance value R of the pre-test interconnect structure 210 after the temperature rise according to the pulse current Ia and the second voltage drop1。
Step S233: and determining the temperature difference at the moment of measuring the resistance values twice based on the relationship between the resistivity of the metal material and the temperature according to the first resistance value and the second resistance value.
Based on the relationship between the resistivity of the metal material and the temperature, the first resistance value R is obtained by combining calculation0And a second resistance value R1The temperature T of the pre-test interconnect structure 210 after the temperature rise may be obtained1. The resistance versus temperature relationship for the predetermined test interconnect structure 210 is as follows:
R1＝R0(1+α×ΔT)；
in the formula, R1Is a second resistance value, R0Is the second resistance value, alpha is the temperature coefficient of resistance, delta T is the temperature difference between the two resistance value measurement times, T1Is t1Temperature value, T, measured at a time0Is t0The temperature value measured at the moment, Δ R, is the resistance difference between the two resistance measurement moments.
T can be obtained by calculation according to the relation between the resistance and the temperature0Time to t1The temperature difference Δ T of the test interconnect structure 210 is preset at the moment. Synchronizing the predetermined test interconnect structure 210 at t using a reflectance thermal imager0Time t and1and testing the temperature at the moment, and if the reflectivity thermal imaging instrument can test the change of temperature increase, determining that the temperature sensitivity of the reflectivity thermal imaging instrument can reach delta T. The value of the power pulse current applied to the predetermined test interconnect structure 210 is reduced and the above test steps are repeated to test the resolving power of the reflectance thermal imager with less temperature variation, thereby determining the temperature sensitivity of the reflectance thermal imager.
In one embodiment, when the predetermined test interconnect structure 210 is a spiral metal interconnect structure with a high thermal expansion coefficient, the resistance change through the spiral metal can be calibrated according to the expansion of the volume of the spiral metal interconnect structure. The metal material with higher thermal expansion coefficient is used as the preparation material of the spiral metal interconnection structure, so that the resistance value change of the spiral metal interconnection structure can be accurately calibrated according to the expansion condition of the spiral metal interconnection structure, and the detection accuracy of the temperature sensitivity of the reflectivity thermal imager is improved. In some other embodiments of the present disclosure, the resistance variation of the predetermined test interconnect structure 210 measured in the "four-point method" test circuit may also be verified according to the volume expansion of the spiral metal interconnect structure.
Fig. 9 is a flowchart illustrating a method for verifying a hot spot power detection capability according to an embodiment of the present disclosure, in which in one embodiment, after determining a spatial resolution of a reflectivity thermal imager according to a minimum distance between two metal lines identified by the reflectivity thermal imager, the method further includes steps S310 to S350.
Step S310: controlling the reflectance of the thermal imager illuminates a third test sample area with a third incident light source.
Similarly, samples to be detected of different materials have different reflection effects on the same incident light source, so that a proper incident light source can be selected according to the material of the sample to be detected. An appropriate third incident light source is selected based on the material of the test resistor 310, the third test sample area 300 of the reflectance thermal imager test module is placed in the test area of the reflectance thermal imager, and the third test sample area 300 is irradiated with the third incident light source.
Step S320: a third test electrical signal is applied to the test resistance in the third test sample region.
The test resistor 310 is connected to the third power module 320 through metal pads at both ends. In some embodiments of the present disclosure, the third power module 320 may be a pulsed current/voltage source. The pulse current output by the third power module 320 is sent to the test resistor 310, so that the test resistor generates heat to form a hot spot.
Step S330: and controlling the reflectivity thermal imager to carry out focusing imaging on the test resistor.
After the third test sample area 300 of the reflectivity thermal imager test module is placed in the test area of the reflectivity thermal imager, the third power module 320 is synchronously arranged with the reflectivity thermal imager, and a lens with a proper magnification is selected to perform focusing imaging on the third test sample area 300. The reflectivity thermal imager collects the temperature of the test resistor 310 at the end of the high level signal of the pulsed power supply to obtain the temperature data of the test resistor 310 at the highest temperature point.
Step S340: the value of the third test electrical signal is varied to vary the heating power of the test resistor.
The heating power of the test resistor 310 can be calculated according to the following formula:
P＝I2×R；
where P is the heating power of the test resistor 310, I is the current passing through the test resistor 310 when the pulse power supply is at a high level, and R is the resistance of the test resistor 310. Wherein, the resistance value of the test resistor 310 can be measured by a four-wire method.
From the calculation of the heating power of the test resistor 310, it can be seen that the heating power of the test resistor 310 can be controlled by changing the magnitude of the current applied across the test resistor 310.
Step S350: and judging the hot spot power detection capability of the reflectivity thermal imager according to the minimum heating power of the reflectivity thermal imager, wherein the identified test resistance is a hot spot.
By continuously decreasing the value of the third test electrical signal, the heating power of the test resistor 310 is gradually decreased. Meanwhile, the reflectance thermal imager synchronously acquires temperature images of the test resistor 310. The minimum power of hot spot detection of the reflectivity thermal imager will be judged from the minimum heating power that can clearly identify the test resistance 310 as a hot spot from the temperature image.
For example, when the heating power of the test resistor 310 is P1, the hot spot pattern with the test resistor 310 in the graph can be identified according to the temperature image acquired by the thermal reflectivity imager, and when the heating power of the test resistor 310 is P2(P1> P2), the hot spot pattern with the test resistor 310 in the graph cannot be identified according to the temperature image acquired by the thermal reflectivity imager, and then the hot spot detection minimum power of the thermal reflectivity imager is determined to be P1.
The testing module for the reflectivity thermal imager can test the hot spot power detection capability of the reflectivity thermal imager, so that the hot spot power detection capability of the reflectivity thermal imager can be further researched and improved based on a verification result.
It should be understood that, although the steps in the flowcharts of fig. 5-6, 8-9 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 5-6 and 8-9 may include multiple steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least some of the other steps.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A reflectance thermal imager test module comprising a first test sample area, said first test sample area comprising:
the metal wire structure comprises a plurality of metal wires which are arranged at different intervals, wherein both ends of each metal wire are provided with bonding pads, and the sizes of the metal wires are the same;
and the first power module is connected with the bonding pads of any two adjacent metal wires and used for providing a first test electric signal for any two adjacent metal wires.
2. The reflectance thermal imager test module of claim 1, further comprising a second test sample area, said second test sample area comprising:
presetting a test interconnection structure, wherein both ends of the preset test interconnection structure are provided with bonding pads;
and the second power module is connected with the pad of the preset test interconnection structure and used for providing a second test electrical signal for the preset test interconnection structure.
3. The reflectance thermal imager test module according to claim 2, wherein said predetermined test interconnect structure comprises a spiral metal interconnect structure.
4. The reflectance thermal imager test module defined in claim 3, wherein said spiral metal interconnect structure is a metal material having a predetermined coefficient of thermal expansion.
5. A reflectance thermal imaging camera test module according to claim 1 or 2, wherein the reflectance thermal imaging camera test module further comprises a third test sample area comprising:
the testing device comprises a testing resistor, a first bonding pad and a second bonding pad, wherein two ends of the testing resistor are connected with the two bonding pads at intervals of a preset distance respectively;
and the third power module is connected with the bonding pads at two ends of the test resistor and used for providing a third test electric signal for the test resistor.
6. A thermal imager testing method for testing a thermal imager according to any one of claims 1 to 5, wherein the method comprises:
controlling a reflectance thermal imager to illuminate a first test sample area with a first incident light source;
applying a first test electrical signal to two adjacent metal strips in the first test sample area, wherein the two adjacent metal strips are separated by different distances, so that the two metal strips generate heat;
controlling the reflectivity thermal imager to carry out focusing imaging on the metal strip in the first test sample area;
and identifying the minimum distance between the two metal wires according to the reflectivity thermal imager, and judging the spatial resolution of the reflectivity thermal imager.
7. The thermal imager testing method of claim 6, wherein after determining the spatial resolution of the thermal imager based on the thermal imager identifying the minimum distance of separation between two metal lines, the method further comprises:
controlling the reflectance thermal imager to illuminate a second test sample area with a second incident light source;
applying a second test electrical signal to a predetermined test interconnect structure in the second test sample area;
changing the value of the second test electrical signal to enable the preset test interconnection structure to have temperature change;
controlling the reflectivity thermal imager to judge the temperature change condition of the preset test interconnection structure;
and identifying the minimum temperature variation amplitude of the preset test interconnection structure according to the reflectivity thermal imager, and judging the temperature sensitivity of the reflectivity thermal imager.
8. The thermography testing method of reflectivity of claim 7, further comprising, prior to controlling the thermography to illuminate the second test sample area with a second incident light source:
adjusting the temperature of a test bench of the reflectivity thermal imager, and calibrating the reflectivity calibration coefficient of the reflectivity thermal imager to the preset test interconnection structure; and calibrating the identification result of the temperature change condition by the reflectivity thermal imager according to the reflectivity calibration coefficient.
9. The reflectance thermal imager testing method of claim 7, wherein after applying a second test electrical signal to the predetermined test interconnect structure in the second test sample area, the method further comprises:
measuring a first voltage drop at two ends of the preset test interconnection structure, and calculating a first resistance value of the preset test interconnection structure;
after changing the value of the second test electrical signal to cause a temperature change to occur in the predetermined test interconnect structure, the method further comprises:
measuring a second voltage drop at two ends of the preset test interconnection structure, and calculating a second resistance value of the preset test interconnection structure;
and determining the temperature difference at the moment of measuring the resistance values twice based on the relationship between the resistivity of the metal material and the temperature according to the first resistance value and the second resistance value.
10. The thermal imager testing method of claim 6, wherein after determining the spatial resolution of the thermal imager based on the thermal imager identifying the minimum distance of separation between two metal lines, the method further comprises:
controlling the reflectance thermal imager to illuminate a third test sample area with a third incident light source;
applying a third test electrical signal to the test resistance in the third test sample region;
controlling the reflectivity thermal imager to carry out focusing imaging on the test resistor;
changing the value of the third test electrical signal to change the heating power of the test resistor;
and judging the hot spot power detection capability of the reflectivity thermal imager according to the minimum heating power of the reflectivity thermal imager, wherein the testing resistance is identified as a hot spot.
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| CN115361174A (en) * | 2022-07-26 | 2022-11-18 | 电子科技大学 | Auxiliary authentication method based on thermal imaging |
| CN115361174B (en) * | 2022-07-26 | 2024-02-23 | 电子科技大学 | Auxiliary authentication method based on thermal imaging |
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