CN113930836A - Method for reducing roughness of copper foil and copper foil product - Google Patents
Method for reducing roughness of copper foil and copper foil product Download PDFInfo
- Publication number
- CN113930836A CN113930836A CN202010669779.1A CN202010669779A CN113930836A CN 113930836 A CN113930836 A CN 113930836A CN 202010669779 A CN202010669779 A CN 202010669779A CN 113930836 A CN113930836 A CN 113930836A
- Authority
- CN
- China
- Prior art keywords
- copper foil
- roughness
- polishing
- reducing
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/22—Polishing of heavy metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
The invention discloses a method for reducing the roughness of a copper foil and a copper foil product thereof, wherein the method comprises the following steps: 1) preparing a polishing solution; 2) treating the copper foil to be polished; 3) performing electrochemical polishing; 4) cleaning: cleaning the copper foil with large grain size after electrochemical polishing, and then drying to obtain a copper foil product with reduced roughness; the method for reducing the roughness of the copper foil is simple in process, simple and effective to operate, the copper foil with large grain size formed by annealing the polycrystalline copper foil is polished by an electrochemical polishing technology, and the polishing solution is formed by mixing concentrated phosphoric acid and ethylene glycol, so that the method has the advantages of few raw material types, low cost, small environmental pollution and good polishing effect. The surface roughness of the copper foil product obtained by polishing by the method for reducing the roughness of the copper foil can reach 1-2 nm, is reduced by more than 10 times compared with that before treatment, has high finish, has better mirror effect, and meets the application of the ultra-smooth copper foil market.
Description
Technical Field
The invention relates to the technical field of copper foil polishing, in particular to a method for reducing the roughness of a copper foil and a copper foil product.
Background
Copper is a non-ferrous metal that is very closely related to humans and is one of the earliest metallic materials historically used by humans. Copper has abundant natural deposits, good properties such as electrical conductivity, thermal conductivity, extensibility, corrosion resistance and the like, and is widely applied to the fields of electric power, electronics, energy petrifaction, transportation industry, machinery and metallurgical industry, light industry, emerging industry and high technology. Copper and its alloys also play a significant role in sophisticated technologies, such as integrated circuits, large scale integrated circuits, superconducting electromagnets, nuclear fusion devices, shape memory alloys, etc., making them ideal material choices for many applications in the environment due to their uniqueness.
The single crystal copper has high purity and good electric signal transmission performance, thereby having extremely high signal transmission performance. The single crystal copper is widely applied in the field of high-standard transmission equipment and the field of integrated circuit packaging due to the low price and excellent performance of the single crystal copper. In an emerging era of continuous development of scientific research, single crystal copper is a very good substrate material, plays an increasingly important role in surface science and film preparation, and particularly, the growth of graphene on the single crystal copper by using a Chemical Vapor Deposition (CVD) method is more mature in recent years, and the large-grain-size copper foil plays an important role in improving the quality of the graphene.
When a metal material is rolled into a foil shape from a body type, crystal grains deform along the rolling direction and form a fiber-like shape, and a slight difference exists in performance along the fiber direction and the direction perpendicular to the fiber direction, so that obvious fluid marks exist on the surface of the rolled foil, and the marks have certain adverse effects after the material growth is carried out by using a large-grain-size copper foil as a substrate. Because the thickness of the foil is in the micron level, the mechanical polishing labor intensity is high, the pollution is serious, the polishing is difficult for materials with complex shapes, and the gloss retention time is short. Chemical polishing includes acid polishing and alkaline polishing, the polishing rate is fast but not easy to control, and gas overflows to seriously pollute the environment. To reduce the rolling marks, the conventional surface polishing process, such as mechanical polishing and chemical polishing, cannot meet the requirement of low roughness, so that an electrochemical polishing process with a better effect is required.
The invention patent of publication No. CN107937977A entitled "cathode roll electrolytic polishing liquid and polishing method" discloses a cathodeThe electrode roll electrolytic polishing liquid consists of two or more kinds of NH4HF2、NaNO3、HNO3、H2SO4、(CH2OH)2The solution is formed by mixing, the acid content is generally higher, the acidity is strong, the corrosion of a workpiece to be polished is easily caused, the operation difficulty is high, the operation temperature is higher, acid mist is easily generated, and the production environment is influenced to a certain extent.
The publication No. CN105390384B, entitled "method for removing silicon dioxide during unstressed electrochemical polishing of copper", discloses a method for removing silicon dioxide during unstressed electrochemical polishing of copper, combines the traditional copper chemical mechanical polishing method with the novel copper unstressed electrochemical polishing method, and has various implementation steps and relatively troublesome operation.
The invention patent publication No. CN105603518A entitled "method for converting polycrystalline copper foil into single crystal Cu (100)" discloses a polishing liquid in which the concentration of phosphoric acid is as high as 98%, and the polishing time is long and the polishing efficiency is low. As can be seen from the change trend of the roughness of the copper after polishing along with the concentration of the phosphoric acid in the graph 2 of the research on electrochemical polishing of copper in the phosphoric acid solution, the lowest polishing roughness of the electrochemical polishing solution is only 30nm by adopting the phosphoric acid as the main component; in addition, the copper foil is not clamped by a clamp in the polishing process, so that wrinkles are easy to occur, and the product quality is difficult to protect.
Therefore, the electrochemical polishing method which has the advantages of small environmental pollution, few types of mixed polishing solution, simple operation and low roughness has wide application prospect and important practical significance.
Disclosure of Invention
In view of the above-mentioned disadvantages, an object of the present invention is to provide a method for reducing the roughness of a copper foil, which has less environmental pollution, less kinds of mixed polishing solutions, and simple operation, and can achieve lower roughness.
The invention also aims to provide a copper foil product prepared by the method for reducing the roughness of the copper foil. The roughness of the copper foil product is reduced by more than 10 times compared with that before treatment, and the copper foil product has a mirror reflection effect and can meet the application of an ultra-smooth copper foil market.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a method for reducing the roughness of copper foil comprises the following steps:
(1) preparing a polishing solution: concentrated phosphoric acid and analytically pure ethylene glycol are mixed according to the volume ratio of 2-5: 1, mixing to prepare anhydrous phosphoric acid-ethylene glycol polishing solution;
(2) and (3) copper foil to be polished: placing the polycrystalline copper foil in a high-temperature annealing furnace for annealing to obtain a large-grain-size copper foil, and clamping by using a clamp;
(3) electrochemical polishing: taking the large-grain-size copper foil in the step (2) as an anode, alternatively taking a metal plate as a cathode, and putting the copper foil and the metal plate into polishing liquid in a polishing tank for electrochemical polishing;
(4) cleaning: and cleaning the electrochemically polished copper foil with large grain size, and then drying to obtain the copper foil product with reduced roughness. The Roughness (RMS) of the large grain size copper foil in the range of 10 μm was verified by atomic force microscopy, and the roughness after polishing was reduced by 10 times or more.
In a preferred embodiment of the present invention, the concentration of the concentrated phosphoric acid is 80 to 90%, preferably 85%.
In a preferred embodiment of the present invention, the jig is made of a glass plate or a metal plate through a cutting process. The clamp is used for keeping avoiding wrinkles of the copper foil in the polishing process, the glass plate comprises but is not limited to an organic glass plate or a common glass plate containing silicon oxide, and the metal plate comprises but is not limited to a copper plate containing manganese, iron, zinc, aluminum, lead, tin, nickel, silicon and phosphorus elements, or a metal plate such as stainless steel and aluminum alloy.
In a preferred embodiment of the present invention, the polycrystalline copper foil is a rolled copper foil or an electrolytic copper foil. The X-ray diffraction peak of the large-grain-size copper foil includes, but is not limited to, a Cu (111) crystal plane, and may be copper foils with different low and high miller indexes, such as Cu (110), Cu (100), Cu (211), Cu (345), Cu (553), Cu (122), Cu (255), and Cu (256).
As a preferable embodiment of the present invention, the metal plate in step (3) includes, but is not limited to, a lead plate, a chromium plate, a graphite plate, a nickel plate, a tin plate, a lead-tin plate, stainless steel, a zinc plate, or a phosphor-copper plate.
As a preferred scheme of the invention, the electrochemical polishing parameter voltage in the step (3) is 1-4V, and the current density is 5-20A/dm2And polishing for 0.5-3 min.
As a preferred scheme of the invention, in the step (4), absolute ethyl alcohol and deionized water are adopted to clean the large-grain-size copper foil subjected to electrochemical polishing for multiple times, and the air humidity is kept lower than 55% in the cleaning process;
in a preferred embodiment of the present invention, in the step (4), the cleaned large grain size copper foil is dried by using compressed air or an inert drying gas. Such as nitrogen, argon, etc., to ensure no reaction with the large grain size copper foil.
The surface roughness of the copper foil product prepared by the method for reducing the roughness of the copper foil is 1-2 nm, the average grain size is 100-20 cm, the thickness is 3-100 mu m, and the thickness can be 3 mu m, 6 mu m, 12 mu m, 18 mu m, 25 mu m, 32 mu m, 50 mu m, 100 mu m or other values.
The invention has the beneficial effects that: the method for reducing the roughness of the copper foil is simple in process, simple and effective to operate, the copper foil with large grain size formed by annealing the polycrystalline copper foil is polished by an electrochemical polishing technology, and the polishing solution is formed by mixing concentrated phosphoric acid and ethylene glycol, so that the method has the advantages of few raw material types, low cost, small environmental pollution and good polishing effect. The surface roughness of the copper foil product obtained by polishing by the method for reducing the roughness of the copper foil can reach 1-2 nm, is reduced by more than 10 times compared with that before treatment, has high finish, has better mirror effect, and meets the application of the ultra-smooth copper foil market.
The invention is further described with reference to the following figures and examples.
Drawings
FIG. 1 is a schematic view of the structure of the clamp of the present invention.
FIG. 2 is a large grain size copper foil after polishing by the method of the present invention for reducing the roughness of the copper foil.
FIG. 3 is a comparison of surface roughness before and after polishing under an atomic force microscope.
Detailed Description
Example 1:
(1) preparing a polishing solution: 1080ml of 85 percent concentrated phosphoric acid and 360ml of analytically pure ethylene glycol are mixed and stirred for 10min at room temperature to obtain anhydrous phosphoric acid-ethylene glycol polishing solution;
(2) and (3) copper foil to be polished: placing the polycrystalline copper foil in a high-temperature annealing furnace, annealing with hydrogen to obtain a large-grain-size copper foil with the thickness of 25 mu m, and clamping with a clamp; referring to fig. 1, a Universal PLS6.75 laser platform cutting machine is used for cutting an acrylic plate with the thickness of 3mm into two glass plate bodies 2, an opening matched with the outline of a polycrystalline copper foil 1 to be clamped is formed in each glass plate body 2, the polycrystalline copper foil 1 is placed between the two glass plate bodies, and the edge position of the opening is pressed at the edge position of the polycrystalline copper foil 1, so that the wrinkling condition in the polishing process is effectively prevented, and the flatness is improved;
(3) electrochemical polishing: performing electrochemical polishing on the large-grain-size copper foil by using a direct current power supply at room temperature, wherein the large-grain-size copper foil is used as an anode, a phosphorus copper plate is used as a cathode, the polishing voltage is 2.5V, and the current density is 10A/dm2Polishing for 2 min;
(4) cleaning: and taking out the clamp with the large-grain-size copper foil, immediately placing the clamp into a tank containing absolute ethyl alcohol and deionized water, cleaning the clamp for 5min by using flowing liquid, taking out the clamp, and drying the clamp by using nitrogen to obtain the low-roughness large-grain-size copper foil product, wherein the reference is shown in figure 1. Referring to fig. 2, a comparison of the surface roughness before and after polishing is shown. Wherein the roughness before treatment was 16.398nm and the roughness after polishing was 1.634 nm.
Example 2:
(1) preparing a polishing solution: mixing 720ml of 85% concentrated phosphoric acid and 360ml of analytically pure ethylene glycol at room temperature, and stirring for 12min to obtain anhydrous phosphoric acid-ethylene glycol polishing solution;
(2) and (3) copper foil to be polished: placing the polycrystalline copper foil in a high-temperature annealing furnace, annealing by using hydrogen to obtain a large-grain-size copper foil with the thickness of 18 mu m, and clamping by using a clamp; referring to fig. 1, a spark-erosion wire cutting machine or a cutting machine is used to cut stainless steel with a thickness of 2mm into two metal plate bodies, an opening matched with the outline of the polycrystalline copper foil to be clamped is formed in each metal plate body, the polycrystalline copper foil is placed between the two metal plate bodies, and the edge position of the opening is pressed at the edge position of the polycrystalline copper foil;
(3) electrochemical polishing: performing electrochemical polishing on the large-grain-size copper foil by using a direct current power supply at room temperature, taking the large-grain-size copper foil as an anode and a phosphorus copper plate as a cathode, wherein the metal plate body is not in contact with polishing solution, the polishing voltage is 2V, and the current density is 10A/dm2Polishing for 3 min;
(4) cleaning: and taking out the clamp with the large-grain-size copper foil, immediately placing the clamp into a groove containing absolute ethyl alcohol and deionized water, cleaning for 6min by using flowing liquid, taking out the clamp, and drying by using nitrogen to obtain the low-roughness large-grain-size copper foil product, wherein the roughness before treatment is 17.801nm, and the roughness after polishing is 1.503 nm.
Example 3:
(1) preparing a polishing solution: 1080ml of 85 percent concentrated phosphoric acid and 360ml of analytically pure ethylene glycol are mixed and stirred for 25min at room temperature to obtain the anhydrous phosphoric acid-ethylene glycol polishing solution;
(2) and (3) copper foil to be polished: placing the polycrystalline copper foil in a high-temperature annealing furnace, annealing by using hydrogen to obtain a large-grain-size copper foil with the thickness of 36 mu m, and clamping by using a clamp; referring to fig. 1, an aluminum alloy with a thickness of 1.5mm is cut into two metal plate bodies by a laser cutting machine, an opening matched with the outline of the polycrystalline copper foil to be clamped is formed in each metal plate body, the polycrystalline copper foil is placed between the two metal plate bodies, and the edge position of the polycrystalline copper foil is pressed through the edge position of the opening;
(3) electrochemical polishing: electrochemically polishing the large-grain-size copper foil at room temperature by using a direct-current power supply, wherein the large-grain-size copper foil is used as an anode, a phosphor copper plate is used as a cathode, and gold is usedThe metal plate body is not contacted with the polishing solution, the polishing voltage is 3V, and the current density is 20A/dm2Polishing for 2 min;
(4) cleaning: and taking out the clamp with the large-grain-size copper foil, immediately placing the clamp into a tank containing absolute ethyl alcohol and deionized water, cleaning for 5min by using flowing liquid, taking out the clamp, and drying by using nitrogen to obtain the low-roughness large-grain-size copper foil product, wherein the roughness before treatment is 16.673nm, and the roughness after polishing is 1.721 nm.
The above examples are only preferred embodiments of the present invention, and the present invention is not limited to all embodiments, and any technical solution using one of the above examples or equivalent changes made according to the above examples is within the scope of the present invention.
The method for reducing the roughness of the copper foil is simple in process, simple and effective in operation, the large-grain-size copper foil formed by annealing the polycrystalline copper foil is subjected to polishing treatment by an electrochemical polishing technology, the polishing solution is formed by mixing concentrated phosphoric acid and ethylene glycol, the components are simple, only two single solutions are provided, the types of the used raw materials are few, the cost is low, the two components are mutually soluble with water, the cleaning is convenient, the environmental pollution is small, the polishing effect is good, the surface roughness can reach 1-2 nm, the grain boundary trace left on the original surface after the polycrystalline copper foil is annealed to form a single crystal and the trace left on the cold rolling process of the copper foil can be effectively reduced, and the application of the ultra-smooth copper foil market is met. In addition, the whole polishing working condition is simple to set, the polishing parameter voltage is 1-4V, and the current density is 5-20A/dm2The polishing time is 0.5-3 min, and the polishing can be carried out at room temperature and is easy to realize.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, which fall within the scope and spirit of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. In addition, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation, as other methods and articles of manufacture similar or equivalent structure are contemplated as falling within the scope of the invention.
Claims (10)
1. A method for reducing the roughness of copper foil is characterized in that: which comprises the following steps:
(1) preparing a polishing solution: concentrated phosphoric acid and analytically pure ethylene glycol are mixed according to the volume ratio of 2-5: 1, mixing to prepare anhydrous phosphoric acid-ethylene glycol polishing solution;
(2) and (3) copper foil to be polished: placing the polycrystalline copper foil in a high-temperature annealing furnace for annealing to obtain a large-grain-size copper foil, and clamping by using a clamp;
(3) electrochemical polishing: taking the large-grain-size copper foil in the step (2) as an anode, alternatively taking a metal plate as a cathode, and putting the copper foil and the metal plate into polishing liquid in a polishing tank for electrochemical polishing;
(4) cleaning: and cleaning the electrochemically polished copper foil with large grain size, and then drying to obtain the copper foil product with reduced roughness.
2. The method for reducing the roughness of a copper foil according to claim 1, wherein: the concentration of the concentrated phosphoric acid is 80-90%.
3. The method for reducing the roughness of a copper foil according to claim 1, wherein: the average grain size of the copper foil product is 100 mu m-20 cm.
4. The method for reducing the roughness of a copper foil according to claim 1, wherein: the polycrystalline copper foil is rolled copper foil or electrolytic copper foil.
5. The method for reducing the roughness of a copper foil according to claim 1, wherein: the metal plate in the step (3) is a lead plate, a chromium plate, a graphite plate, a nickel plate, a tin plate, a lead-tin plate, stainless steel, a zinc plate or a phosphor-copper plate.
6. According to the rightThe method for reducing the roughness of a copper foil according to claim 1, wherein: the electrochemical polishing parameter voltage in the step (3) is 1-4V, and the current density is 5-20A/dm2And polishing for 0.5-3 min.
7. The method for reducing the roughness of a copper foil according to claim 1, wherein: and (4) cleaning the large-grain-size copper foil subjected to electrochemical polishing for multiple times by adopting absolute ethyl alcohol and deionized water, wherein the air humidity is kept lower than 55% in the cleaning process.
8. The method for reducing the roughness of a copper foil according to claim 1, wherein: and (4) drying the cleaned copper foil with large grain size by adopting compressed air or inert drying gas.
9. A copper foil product produced by the method for reducing the roughness of a copper foil according to any one of claims 1 to 8, wherein the surface roughness is 1 to 2nm and the average grain size is 100 μm to 20 cm.
10. The copper foil article of claim 9, wherein: the thickness of the film is 3 to 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010669779.1A CN113930836A (en) | 2020-07-13 | 2020-07-13 | Method for reducing roughness of copper foil and copper foil product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010669779.1A CN113930836A (en) | 2020-07-13 | 2020-07-13 | Method for reducing roughness of copper foil and copper foil product |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113930836A true CN113930836A (en) | 2022-01-14 |
Family
ID=79273658
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010669779.1A Pending CN113930836A (en) | 2020-07-13 | 2020-07-13 | Method for reducing roughness of copper foil and copper foil product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113930836A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006237269A (en) * | 2005-02-24 | 2006-09-07 | Sumitomo Metal Electronics Devices Inc | Printed wiring board and printed wiring board holding tool for holding the same |
| CN202380111U (en) * | 2011-11-30 | 2012-08-15 | 常州市协和电路板有限公司 | Tooling for thin plate electric copper plating production process |
| CN105603518A (en) * | 2016-03-15 | 2016-05-25 | 北京大学 | Method for converting polycrystal copper foil into monocrystal Cu(100) |
| CN206986310U (en) * | 2017-07-03 | 2018-02-09 | 何安民 | The automatic hanger of copper foil plating |
| CN110205603A (en) * | 2019-07-10 | 2019-09-06 | 北京石墨烯研究院 | Multi-layer graphene and preparation method thereof |
| CN110273176A (en) * | 2018-03-16 | 2019-09-24 | 中国科学院化学研究所 | A method of preparing larger areas of copper Cu(111) monocrystalline |
-
2020
- 2020-07-13 CN CN202010669779.1A patent/CN113930836A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006237269A (en) * | 2005-02-24 | 2006-09-07 | Sumitomo Metal Electronics Devices Inc | Printed wiring board and printed wiring board holding tool for holding the same |
| CN202380111U (en) * | 2011-11-30 | 2012-08-15 | 常州市协和电路板有限公司 | Tooling for thin plate electric copper plating production process |
| CN105603518A (en) * | 2016-03-15 | 2016-05-25 | 北京大学 | Method for converting polycrystal copper foil into monocrystal Cu(100) |
| CN206986310U (en) * | 2017-07-03 | 2018-02-09 | 何安民 | The automatic hanger of copper foil plating |
| CN110273176A (en) * | 2018-03-16 | 2019-09-24 | 中国科学院化学研究所 | A method of preparing larger areas of copper Cu(111) monocrystalline |
| CN110205603A (en) * | 2019-07-10 | 2019-09-06 | 北京石墨烯研究院 | Multi-layer graphene and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106024988B (en) | The black silicon of one-step method wet method prepares and surface treatment method | |
| US10104783B2 (en) | Method for producing ceramic circuit board | |
| TWI408241B (en) | Copper alloy for electronic machinery and tools and method of producing the same | |
| CN108570703A (en) | Preparation method of tungsten/copper laminated composite material based on tungsten sheet surface nanocrystallization | |
| CN100577891C (en) | Anodic oxidation method for raising rigidity and corrosion resistance of plated aluminum on surface of metal base | |
| CN110016708B (en) | Micro-arc oxidation surface treatment method suitable for copper and copper alloy and product | |
| JP2007039804A (en) | Copper alloy for electronic apparatus and method of producing the same | |
| CN110514503A (en) | A kind of preparation method of pure copper samples | |
| CN112708794B (en) | Method for preparing copper-tungsten alloy by adopting superfine tungsten powder | |
| CN1230575C (en) | Continuous nickel plating process for stainless steel wire | |
| CN101142333B (en) | Process for producing aluminum material for electrolytic capacitor electrode, aluminum material for electrolytic capacitor electrode, process for producing electrolytic capacitor electrode material, a | |
| CN113930836A (en) | Method for reducing roughness of copper foil and copper foil product | |
| CN112251233B (en) | Silicon etching solution for removing grinding lines | |
| Kim et al. | Formation of CoNi alloy thin films on silicon by electroless deposition | |
| CN116598141B (en) | Preparation method of surface hydroxylation sintered foil | |
| CN113436891A (en) | Method for inducing medium-high voltage anode foil to uniformly corrode and form pores by adopting nano pits after anodic oxidation | |
| CN107768474A (en) | A kind of manufacture craft of tin-coated copper strip | |
| CN102330124A (en) | Pulse electrochemical deposition and tissue adjustment processes for nickel plating copper belt | |
| CN110340174B (en) | Production method of tantalum-aluminum composite plate strip for capacitor | |
| CN110014718B (en) | Method for applying gallium-based thermal interface material to aluminum substrate to enhance interface heat transfer | |
| CN101250705B (en) | Method for manufacturing nickel-cuprum metallic baseband layer of highly oriented double-shaft texture | |
| Qiu et al. | Antimony telluride thin films electrodeposited in an alkaline electrolyte | |
| CN114152638A (en) | Sample preparation method for MoNb target EBSD detection | |
| CN111850564A (en) | Titanium compound film deplating solution and deplating method | |
| CN205687993U (en) | Prepare the device of welding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |