CN113930238B - Afterglow temperature measuring material and preparation method and application thereof - Google Patents
Afterglow temperature measuring material and preparation method and application thereof Download PDFInfo
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Abstract
The invention provides an afterglow temperature measuring material, which belongs to the technical field of solid luminescent materials and has a chemical formulaIs Cd 1‑x‑ y Ln x Bi y SiO 3 Wherein Ln is selected from at least one of Pr, Nd, Sm, Dy and Tm, x and y are mole fractions, the value range of x is more than or equal to 0.0001 and less than or equal to 0.3, and the value range of y is more than or equal to 0.001 and less than or equal to 0.1. The invention also provides a preparation method and application of the afterglow temperature measuring material. The afterglow temperature measuring material has bright afterglow emission at-180-200 deg.c after ultraviolet irradiation, and afterglow spectrum emitted with defect in wide band and Ln 3+ The narrow-band emission component shows obvious difference in the afterglow spectrum at different temperatures, the difference can be used for temperature sensing, the temperature measurement method avoids the heat effect caused by exciting light and the autofluorescence of the measured environment, and the accuracy and the signal-to-noise ratio of temperature measurement are improved; the physical and chemical properties are stable, and temperature measurement can be carried out in some special scenes; the material is prepared by sintering in air by adopting a traditional high-temperature solid phase method, and has low requirements on synthesis conditions, low cost and simple operation.
Description
Technical Field
The invention belongs to the technical field of solid luminescent materials, and relates to an afterglow temperature measuring material, and a preparation method and application thereof.
Background
Temperature is one of the most basic parameters in physics, and its accurate measurement plays an important role in scientific research, industrial production, life science, and other fields. In recent years, optical thermometry based on photoluminescence of phosphors has been rapidly developed. This temperature measurement method is mainly implemented based on the temperature variation of a certain parameter (or parameters) in the photoluminescence process, for example: fluorescence intensity ratio, emission level lifetime, emission peak position, fluorescence polarization degree, emission intensity, and the like. The optical temperature measurement method not only has high relative sensitivity, but also can be normally used in some extreme environments, such as: strong electromagnetic fields, within biological tissue, in aviation gas turbines, and the like.
However, the optical temperature measurement method requires excitation light to irradiate the temperature measurement material in real time, which not only affects the accuracy of temperature measurement, but also limits the application of the temperature measurement method in some special environments, and may reduce the signal-to-noise ratio of the characteristic light signal. For example: yb in common use 3+ -Er 3+ The temperature measurement system needs 980nm laser to carry out real-time excitation, and the infrared laser can bring strong thermal effect to the temperature measurement material, which is contradictory to the accurate measurement of temperature. On the other hand, in some optical temperature measurement material systems using visible light or ultraviolet light as an excitation source, if a temperature measurement environment contains a large amount of organic matters (such as underground petroleum pipelines, organic reaction tanks of chemical plants, and the like), the visible light or ultraviolet light excites the temperature measurement material in real time, the organic matters are also excited, and strong background fluorescence greatly reduces the signal-to-noise ratio of the temperature measurement signal. Therefore, how to avoid various limitations brought by exciting light on the premise of ensuring the advantages of the original optical temperature measurement method becomes a problem to be solved urgently by the temperature measurement method.
The long afterglow material is a material which can continuously emit light within minutes to hundreds of hours after the excitation is stopped. The long afterglow luminescence phenomenon is used for optical temperature measurement, so that the adverse effect of exciting light on accurate temperature measurement can be avoided. And the temperature measurement sensitivity can be improved by regulating the trap depth, the trap number, the relative positions among the traps and the like. Meanwhile, in order to improve the signal-to-noise ratio of the afterglow emission signal, the used material must have stronger afterglow emission in the temperature measurement range. However, most of the traditional afterglow materials are single emission centers, and the temperature effect of the afterglow spectrum is very insignificant, so that at present, almost no suitable afterglow temperature measuring material exists.
Disclosure of Invention
In view of the above, the present invention provides an afterglow temperature measuring material with strong afterglow emission and afterglow spectrum sensitive to temperature, aiming at the problem of lack of applicable materials in the field of afterglow temperature measurement.
To achieve the above objectThe invention provides an afterglow temperature measuring material with the chemical formula of Cd 1-x-y Ln x Bi y SiO 3 Wherein Ln is selected from at least one of Pr, Nd, Sm, Dy and Tm, x and y are mole fractions, the value range of x is more than or equal to 0.0001 and less than or equal to 0.3, and the value range of y is more than or equal to 0.001 and less than or equal to 0.1.
Furthermore, the value range of x is more than or equal to 0.001 and less than or equal to 0.1, and the value range of y is more than or equal to 0.001 and less than or equal to 0.05.
Furthermore, the afterglow emission intensity of the afterglow temperature measuring material is regulated and controlled by regulating and controlling the concentration of Bi and Ln ions, and the Bi ions are used for enhancing the afterglow emission intensity.
The invention also provides a preparation method of the afterglow temperature measuring material, when Ln is Pr, the material is CdO and Pr 6 O 11 、Bi 2 O 3 And SiO 2 After being mixed and ground uniformly, the mixture is sintered in the air;
when Ln is not Pr, CdO and Ln are used as raw materials 2 O 3 、Bi 2 O 3 And SiO 2 After being mixed and ground evenly, the mixture is sintered in the air.
Further, when Ln is Pr, the raw materials CdO and Pr 6 O 11 、Bi 2 O 3 And SiO 2 In a molar ratio of 6 (1-x-y): x: 3 y: 6;
when Ln is not Pr, CdO and Ln are used as raw materials 2 O 3 、Bi 2 O 3 And SiO 2 In a molar ratio of 2 (1-x-y): x: y: 2.
furthermore, the sintering temperature is 850-1250 ℃, and the sintering time is 1-8 hours.
The invention also provides an application of the afterglow temperature measuring material, the afterglow temperature measuring material has bright afterglow emission within-180-200 ℃ after being irradiated by ultraviolet light, and the afterglow spectrum is emitted by a defective broadband and Ln 3+ Narrow-band emission.
Further, broadband emission of defects in the afterglow spectrum and Ln 3+ The ratio of the narrow-band emission is determined by the temperature of the environment where the afterglow temperature measuring material is irradiated by ultraviolet light.
Further, the method can be used for preparing a novel materialEarth, broadband emission area and Ln using defects in afterglow spectrum 3+ The ratio of the narrow band emission areas determines the temperature of the measured environment.
Further, defect sum Ln is used 3+ Determining the temperature of the detected environment by the ratio of partial spectral areas of the two luminous centers;
or, defect and Ln 3+ The ratio of the afterglow intensities of the two wavelengths respectively corresponding to the two luminescence centers determines the temperature of the environment to be measured.
The invention adopts the technical scheme that the method has the advantages that:
the chemical formula of the afterglow temperature measuring material is Cd 1-x-y Ln x Bi y SiO 3 The strength of afterglow is enhanced by co-doping Bi ions, and the signal-to-noise ratio of a temperature measurement signal is improved; the afterglow intensity can be regulated and controlled by adjusting the concentration of Bi and Ln. The afterglow spectrum of the material is sensitive to temperature, and shows obvious difference at different temperatures, so that the method overcomes the heat effect caused by exciting light and the autofluorescence of the tested environment during the temperature measurement by the photoluminescence phosphor at present, and can improve the accuracy and the signal-to-noise ratio of the temperature measurement. Meanwhile, the material has stable physical and chemical properties, and can be used for temperature measurement in some special scenes. The material is prepared by sintering in air by adopting a traditional high-temperature solid phase method, and has low requirements on synthesis conditions, low cost and simple operation.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows the X-ray diffraction patterns and CdSiO patterns of luminescent materials prepared in comparative examples 1 and 4 and examples 1, 3, 4, 7, 9, 10 and 11 3 PDF # 35-0810;
FIG. 2 is the thermoluminescence curves of comparative examples 1, 2, 3, 4, 5 and examples 1, 2, 3, 4, 5 at-180 deg.C to 300 deg.C, the co-doping of Bi ions effectively improves the afterglow emission intensity;
FIG. 3 is the thermoluminescence curves of examples 4, 6, 7, 8, 9 at-180 deg.C to 300 deg.C, the afterglow emission intensity can be effectively adjusted by adjusting the concentrations of Bi ions and Ln;
FIG. 4 is a graph showing afterglow emission spectra measured at room temperature after excitation of examples 1, 2, 3, 4 and 5 by 254nm UV light, each spectrum consisting of broadband emission of defects (peak of about 460nm, full peak of about 350nm to 800nm) and Ln 3+ The narrow-band emission component of (1);
FIG. 5 is the afterglow emission spectra at different temperatures of-180 ℃ and 200 ℃ of the embodiment 4;
FIG. 6 shows the wide band area of defect emission and Dy in the afterglow emission spectrum at different temperatures of FIG. 5 3+ The ratio of the emitted narrow band areas and a polynomial fit curve (thermometry curve) for each data point;
FIG. 7 is a graph of absolute and relative sensitivity of the thermometry curves of FIG. 6;
FIG. 8 is the afterglow emission spectra at 5 seconds, 10 seconds, 15 seconds and 25 seconds and their normalized spectra of example 4 after excitation by 254nm UV light at room temperature, the shape of the afterglow emission spectra at the same temperature being unchanged;
FIG. 9 is a graph of experimental data points and a polynomial fit of the temperature curves of examples 1, 2, 3, and 5;
FIG. 10 shows the absolute and relative sensitivities of the temperature profiles of examples 1, 2, 3, and 5.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides an afterglow temperature measuring material with a chemical formula of Cd 1-x-y Ln x Bi y SiO 3 Wherein Ln is selected from at least one of Pr, Nd, Sm, Dy and Tm, x and y are mole fractions, the value range of x is more than or equal to 0.0001 and less than or equal to 0.3, and the value range of y is more than or equal to 0.001 and less than or equal to 0.1. Preferably, x is in the range of 0.001. ltoreq. x.ltoreq.0.1 and y is in the range of 0.001. ltoreq. y.ltoreq.0.05. The afterglow emission intensity of the afterglow temperature measuring material is regulated and controlled by regulating and controlling the concentration of Bi and Ln ions, and the Bi ions are used for enhancing the afterglow emission intensity.
The invention adopts CdSiO 3 :Ln 3+ Bi ions are co-doped in the fluorescent powder to enhance the intensity of afterglow emission. The Bi ions mainly act to increase the number of traps and further increase the intensity of afterglow, and after the excitation of 254nm ultraviolet light, the afterglow spectrum is mainly emitted by defects in a broadband mode (the peak value is about 460nm, and the full peak is about 350nm to 800nm) and Ln 3+ The narrow-band emission composition of Bi, and weak afterglow emission of Bi can be observed at certain temperature. The principle of the material which can be used for afterglow temperature measurement is as follows: as known from the local state model of thermoluminescence, the trap and the luminescence center may be in a local state, that is, after carriers (electrons or holes) in a specific trap escape from the trap due to external excitation (thermal excitation, optical excitation, force excitation, etc.), only the specific luminescence center emits light, and the trap and the luminescence center are in a local state. When two or more luminescent centers in localized states with traps exist in the same material, the afterglow spectrum of the material may have temperature characteristics. When the depth and the distribution of the traps are different, the afterglow intensity ratio of different emission centers at different temperatures changes, so that the afterglow spectrum has temperature characteristics, and in order to ensure that the shape of the afterglow spectrum does not change along with time at the same temperature, the properties of the traps corresponding to the emission centers are ensured to be the same. Cd of the invention 1-x-y Ln x Bi y SiO 3 The temperature characteristics of the afterglow temperature measuring material are derived from the afterglow temperature measuring material, and on the other hand, the luminescent centers of the afterglow temperature measuring material are one of defect luminescence of the material and the other is Ln 3+ Wherein the emission of the defect is a broad band, Ln 3+ Is narrow-band. Broad band of thermal activation energy than narrow band of thermal activation energySmall, so that from the point of view of thermal quenching, broad band is more severe than narrow band thermal quenching at the same temperature. This further increases the sensitivity of the material for temperature measurement.
The invention also provides a preparation method of the afterglow temperature measuring material, which is prepared from the raw materials CdO and Ln 2 O 3 (Pr when Ln is Pr) 6 O 11 )、Bi 2 O 3 And SiO 2 After being mixed and ground evenly, the mixture is sintered in the air. Wherein, the raw materials CdO and Ln 2 O 3 (Pr when Ln is Pr) 6 O 11 )、Bi 2 O 3 And SiO 2 In a molar ratio of 2 (1-x-y): x: y: 2 (6 (1-x-y) x: 3 y: 6 when Ln is Pr); the sintering temperature is 850-1250 ℃, and the sintering time is 1-8 hours.
The invention also provides the application of the afterglow temperature measuring material, the afterglow temperature measuring material shows different afterglow spectra at different temperatures after being irradiated by ultraviolet light, and the temperature characteristic of the afterglow spectra can be used for temperature measurement; has bright afterglow emission at-180-200 deg.c and afterglow spectrum comprising defect broadband emission (peak value of 460nm, total peak value of 350-800 nm) and Ln 3+ Narrow-band emission. Broadband emission sum Ln of defects in afterglow spectrum 3+ The ratio of the narrow-band emission is determined by the temperature of the environment where the afterglow temperature measuring material is irradiated by ultraviolet light. Therefore, the broadband emission area and Ln of the defects in the afterglow spectrum can be used 3+ Determining the temperature of the measured environment by the ratio of the narrow-band emission areas; alternatively, defects and Ln are used 3+ Determining the temperature of the detected environment by the ratio of partial spectral areas of the two luminous centers; or, defect and Ln 3+ The ratio of the afterglow intensities of the two wavelengths respectively corresponding to the two luminescence centers determines the temperature of the environment to be measured.
Comparative example 1
Cd 0.98 Pr 0.02 SiO 3 The preparation process is as follows:
according to the chemical composition: 5.88CdO-0.02Pr 6 O 11 -6SiO 2 CdO and Pr are weighed according to the stoichiometric ratio 6 O 11 、SiO 2 Fully mixing and grinding the mixture evenly, sintering the obtained mixture in air at 1050 ℃ for 2 hours, naturally cooling the mixture to room temperature, grinding the sintered body into powder to obtain Cd 0.98 Pr 0.02 SiO 3 A luminescent material.
Comparative example 2
Cd 0.98 Nd 0.02 SiO 3 The preparation process is as follows:
according to the chemical composition: 1.96CdO-0.02Nd 2 O 3 -2SiO 2 CdO and Nd are weighed according to the stoichiometric ratio 2 O 3 、SiO 2 Fully mixing and grinding the mixture evenly, sintering the obtained mixture in air at 850 ℃ for 8 hours, naturally cooling the mixture to room temperature, grinding the sintered body into powder to obtain Cd 0.98 Nd 0.02 SiO 3 A luminescent material.
Comparative examples 3 to 5
The preparation process is the same as that of comparative example 2, except that the chemical formula, raw material ratio, sintering temperature and sintering time of the luminescent material are different, see table 1 specifically.
Example 1
Cd 0.96 Pr 0.02 Bi 0.02 SiO 3 The preparation process is as follows:
according to the chemical composition: 5.76CdO-0.02Pr 6 O 11 -0.06Bi 2 O 3 -6SiO 2 CdO and Pr are weighed according to the stoichiometric ratio 6 O 11 、Bi 2 O 3 、SiO 2 Fully mixing and grinding the mixture evenly, sintering the obtained mixture in air at 1050 ℃ for 2 hours, naturally cooling the mixture to room temperature, grinding the sintered body into powder to obtain Cd 0.96 Pr 0.02 Bi 0.02 SiO 3 A luminescent material.
Example 2
Cd 0.96 Nd 0.02 Bi 0.02 SiO 3 The preparation process is as follows:
according to the chemical composition: 1.92CdO-0.02Nd 2 O 3 -0.02Bi 2 O 3 -2SiO 2 CdO and Nd are weighed according to the stoichiometric ratio 2 O 3 、Bi 2 O 3 、SiO 2 Fully mixing and grinding the mixture evenly, sintering the obtained mixture in air at 850 ℃ for 8 hours, naturally cooling the mixture to room temperature, grinding the sintered body into powder to obtain Cd 0.96 Nd 0.02 Bi 0.02 SiO 3 A luminescent material.
Examples 3 to 11
The same preparation process as that of example 2, except that the chemical formula, raw material ratio, sintering temperature and sintering time of the luminescent material are different, see table 1 specifically.
TABLE 1 summary of chemical compositions and preparation conditions for comparative examples 1-5 and examples 1-11
The luminescent materials prepared in comparative examples 1 to 5 and examples 1 to 11 were subjected to X-ray diffraction analysis, pyroelectric luminescent property test, variable temperature afterglow spectrum test, isothermal afterglow decay test, etc., and the temperature measurement curve and the related sensitivity, etc., were calculated from the experimental data, and the results are shown in fig. 1 to 10.
FIG. 1 shows the X-ray diffraction patterns and CdSiO of the luminescent materials prepared in comparative examples 1 and 4 and examples 1, 3, 4, 7, 9, 10 and 11 3 Standard card PDF # 35-0810.
FIG. 2 is a graph showing the thermoluminescence curves at-180 ℃ to 300 ℃ for comparative examples 1, 2, 3, 4, and 5 and examples 1, 2, 3, 4, and 5. Before testing, the sample is heated to 300 ℃ to empty the carriers in the trap, then the temperature is reduced to-180 ℃, the sample is excited by 254nm ultraviolet light for 5 minutes, then the corresponding wavelength is monitored, and the temperature is raised to 300 ℃ at the heating rate of 1 ℃/s to obtain the thermoluminescence curve. The result shows that the co-doped Bi ions can effectively improve the afterglow emission intensity, and can even improve the afterglow intensity by one order of magnitude at certain temperature.
FIG. 3 is a graph showing the thermoluminescence curves at-180 deg.C to 300 deg.C for examples 4, 6, 7, 8, and 9, in accordance with the test method of the sample in FIG. 2. In a certain concentration range, Dy 3+ The increase of the concentration will cause the afterglow emission intensityDecrease and Bi 3+ An increase in concentration increases the intensity of the afterglow. In practical application, the concentrations of Bi ions and Ln ions can be regulated and controlled according to actual requirements to effectively regulate the afterglow emission intensity.
FIG. 4 is an afterglow emission spectra measured at room temperature of examples 1, 2, 3, 4, 5 after excitation with 254nm UV light at room temperature for 5 minutes, each spectrum consisting of broadband emission of defects (peak about 460nm, full peak about 350nm to 800nm) and Ln 3+ The afterglow temperature measuring method realizes temperature sensing by utilizing different ratio of broadband to narrowband in afterglow emission spectrum at different temperatures.
FIG. 5 is the afterglow emission spectra of example 4 at temperatures ranging from-180 deg.C to 200 deg.C, and the afterglow emission spectra were recorded after the cessation of the excitation with 254nm UV light for 1 minute at each temperature to ensure that the sample was at that temperature, and finally corrected to the corresponding intensity using the thermoluminescence curve of FIG. 2. It can be observed that the broadband sum Ln of the defect emission 3+ The narrow bands of emission differ significantly at different temperature ratios.
FIG. 6 shows the wide band area of defect emission and Dy in the afterglow emission spectrum at different temperatures of FIG. 5 3+ The ratio of the emitted narrow band areas and a polynomial fit curve (thermometry curve) for each data point. At-120 deg.C-20 deg.C, the broadband emission of defect is relative to Dy 3+ The narrow-band emission ratio of (2) is gradually increased, and the broadband emission of the defect is relative to Dy at the temperature of between 20 and 200 DEG C 3+ Gradually decreases in the narrow-band emission ratio. The two temperature measurement curves can be respectively applied to the measurement of the temperature below the room temperature and the temperature above the room temperature, and can be selected according to the actual temperature measurement environment.
FIG. 7 is a graph of absolute and relative sensitivity of the thermometry curves of FIG. 6. The absolute sensitivity can reach 2.6 percent at the highest temperature below 20 DEG C -1 The absolute sensitivity can reach 5.3 percent at the highest temperature above room temperature -1 The highest relative sensitivity can reach 4.2 percent DEG C -1 Compared with the sensitivity of the steady-state photoluminescence temperature measurement method reported at present, the method also has obvious advantages.
FIG. 8 is the afterglow emission spectra at 5 seconds, 10 seconds, 15 seconds and 25 seconds and their normalized spectra of example 4 after excitation with 254nm UV light at room temperature. It can be obviously observed that the shape of the afterglow emission spectrum basically does not change with time at the same temperature, which is an important index that the material can realize afterglow temperature measurement. At the same temperature, the shape of the afterglow spectrum does not change along with time, so that the one-to-one corresponding relation between the spectrum shape and the temperature is ensured.
FIG. 9 shows experimental data points and polynomial fitting curves of the temperature measurement curves of examples 1, 2, 3 and 5. like example 4, the temperature measurement curve of each example can be divided from about 20 ℃ and the appropriate temperature measurement curve segment can be selected according to different temperature measurement ranges. Wherein, the example 1 and the example 3 select the ratio of the spectral areas of the parts corresponding to the two emission centers in the afterglow spectrum to determine the temperature; example 2 and example 5 the ratio of the afterglow emission intensities of certain two wavelengths corresponding to two luminescence centers is selected to determine the temperature.
FIG. 10 is a graph showing the absolute and relative sensitivities of the temperature profiles of examples 1, 2, 3, and 5, which all have high afterglow temperature sensitivity and allow temperature measurement over a wide temperature range.
The above embodiments show that the luminescent material for afterglow temperature measurement can enhance the afterglow emission intensity by co-doping Bi ions, and regulate the afterglow emission intensity by regulating the concentration of Bi and Ln ions. Temperature measurements can be made by afterglow spectroscopy at temperatures between about-180 c and 200 c and have high absolute and relative sensitivity.
The chemical formula of the afterglow temperature measuring material is Cd 1-x-y Ln x Bi y SiO 3 The strength of afterglow is enhanced by co-doping Bi ions, and the signal-to-noise ratio of a temperature measurement signal is improved; the afterglow intensity can be regulated and controlled by adjusting the concentration of Bi and Ln. The afterglow spectrum of the material is sensitive to temperature, and shows obvious difference at different temperatures, so that the method overcomes the thermal effect caused by exciting light and the autofluorescence of the tested environment during temperature measurement by the existing photoluminescence phosphor, and can improve the temperature for measurementAccuracy of the quantity and signal-to-noise ratio. Meanwhile, the material has stable physical and chemical properties, and can be used for temperature measurement in some special scenes. The material is prepared by sintering in air by adopting a traditional high-temperature solid phase method, and has low requirements on synthesis conditions, low cost and simple operation.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. An afterglow temperature measuring material, which is characterized in that the chemical formula is Cd 1-x-y Ln x Bi y SiO 3 Wherein Ln is selected from one of Pr, Nd, Sm and Tm, x and y are mole fractions, the value range of x is more than or equal to 0.0001 and less than or equal to 0.3, and the value range of y is more than or equal to 0.001 and less than or equal to 0.1.
2. The afterglow temperature measuring material of claim 1, wherein x is 0.001-0.1 and y is 0.001-0.05.
3. The afterglow temperature measuring material of claim 1, wherein the afterglow emission intensity of the afterglow temperature measuring material is controlled by controlling the concentration of Bi and Ln ions, and the Bi ions are used for enhancing the afterglow emission intensity.
4. A method for preparing an afterglow temperature measuring material as defined in any one of claims 1-3, wherein when Ln is Pr, the material is CdO, Pr 6 O 11 、Bi 2 O 3 And SiO 2 After being mixed and ground uniformly, the mixture is sintered in the air;
when Ln is not Pr, CdO and Ln are used as raw materials 2 O 3 、Bi 2 O 3 And SiO 2 After being mixed and ground evenly, the mixture is sintered in the air.
5. The device of claim 4The preparation method of glow temperature measuring material is characterized by that when Ln is Pr, the raw materials CdO and Pr 6 O 11 、Bi 2 O 3 And SiO 2 In a molar ratio of 6 (1-x-y): x: 3 y: 6;
when Ln is not Pr, CdO and Ln are used as raw materials 2 O 3 、Bi 2 O 3 And SiO 2 In a molar ratio of 2 (1-x-y): x: y: 2.
6. the method for preparing an afterglow temperature measuring material as defined in claim 4, wherein the sintering temperature is 850-1250 ℃ and the sintering time is 1-8 hours.
7. The use of the afterglow thermometric material of any one of claims 1-3, wherein said afterglow thermometric material has bright afterglow emission at-180 ℃ to 200 ℃ after being irradiated by ultraviolet light, and afterglow spectrum is emitted by defect broadband and Ln 3+ Narrow-band emission.
8. The use of an afterglow thermometric material of claim 7 wherein the broadband emission sum Ln of the defects in the afterglow spectrum 3+ The ratio of the narrow-band emission is determined by the temperature of the environment where the afterglow temperature measuring material is irradiated by ultraviolet light.
9. Use of an afterglow thermometric material according to claim 7, characterized in that the broadband emission area and Ln of the defects in the afterglow spectrum are used 3+ The ratio of the narrow band emission areas determines the temperature of the measured environment.
10. Use of an afterglow temperature measuring material as claimed in claim 7, characterized in that defects and Ln are used 3+ Determining the temperature of the detected environment by the ratio of partial spectral areas of the two luminous centers;
or, defect and Ln 3+ The ratio of the afterglow intensities of the two wavelengths respectively corresponding to the two luminescence centers determines the temperature of the environment to be measured.
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