CN113921194A - Double-layer self-adhesive enameled wire process method and system - Google Patents

Double-layer self-adhesive enameled wire process method and system Download PDF

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CN113921194A
CN113921194A CN202111074513.3A CN202111074513A CN113921194A CN 113921194 A CN113921194 A CN 113921194A CN 202111074513 A CN202111074513 A CN 202111074513A CN 113921194 A CN113921194 A CN 113921194A
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temperature control
temperature
value
control area
layer
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CN113921194B (en
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彭春斌
谈家满
王晓兵
幸泽铜
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Guangdong Jingda Rea Special Enameled Wire Co ltd
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Guangdong Jingda Rea Special Enameled Wire Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/06Insulating conductors or cables
    • H01B13/065Insulating conductors with lacquers or enamels
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F8/00Arrangements for software engineering
    • G06F8/30Creation or generation of source code
    • G06F8/31Programming languages or programming paradigms
    • G06F8/315Object-oriented languages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0016Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/06Insulating conductors or cables
    • H01B13/16Insulating conductors or cables by passing through or dipping in a liquid bath; by spraying
    • H01B13/165Insulating conductors or cables by passing through or dipping in a liquid bath; by spraying by spraying

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Abstract

The invention discloses a double-layer self-adhesive enameled wire process method and a system, wherein a base wire is conveyed to a first temperature environment through a pay-off stand to be sprayed with a hot melt layer to obtain a hot melt layer wire; conveying each temperature control area of the hot-melting layer wire to a second temperature environment and collecting the temperature value of each temperature control area in real time; calculating the thermal potential value of each temperature control area; thereby judge in proper order that each control by temperature change region of hot melt layer line can carry out spraying mellow wine melting layer and obtain double-deck autohension enameled wire, the temperature balance in the discernment enameled wire manufacturing process that can be dynamic for can be compatible between the hot melt layer of enameled wire and mellow wine melting layer two-layer, the temperature difference trend of the temperature cooling between every segmentation of enameled wire is littleer in the course of working, thereby has avoided the spontaneous combustion problem that appears in the course of working, has improved the quality of the enameled wire of production.

Description

Double-layer self-adhesive enameled wire process method and system
Technical Field
The disclosure belongs to the technical field of enameled wire manufacturing technology and product processing, and particularly relates to a double-layer self-adhesive enameled wire process method and system.
Background
The self-adhesive enameled wire is a special enameled wire, and the manufacturing of the coil is simple and convenient due to the special processing performance of the self-adhesive enameled wire. The wound coil can be bonded and formed after being heated or treated by solvent. The self-adhesive enameled wire is almost of a composite layer structure, namely, the self-adhesive paint (self-adhesive layer) is coated outside a common enameled wire (base wire). The composite layer enameled wire is formed by coating two (or three) layers of paints made of different materials.
At present, the self-adhesive enameled wire with two characteristics of hot melting and alcohol melting has respective performances of two different materials, overcomes the defects of the same material in performance, but also brings problems in processing, because the enameled wire is divided into an alcohol melting layer and a hot melting layer, the two layers of burning points are different, the hot melting layer is generally processed in the environment of about 500 ℃, the alcohol melting layer is easy to spontaneously combust when exceeding about 50 to 70 ℃, the strength of the hot melting layer is slightly higher than that of the alcohol melting layer, the heat resistance is high, a coil cannot be easily dispersed or abraded, the biggest defect of the alcohol melting layer is poor in heat performance, the spontaneous combustion problem can occur due to the processing temperature difference of the two layers in the processing process, and an intelligent self-adhesive enameled wire process method is needed to solve the problems.
Disclosure of Invention
The invention aims to provide a double-layer self-adhesive enameled wire process method and a double-layer self-adhesive enameled wire process system, which are used for solving one or more technical problems in the prior art and at least provide a beneficial selection or creation condition.
In order to achieve the above objects, according to an aspect of the present disclosure, there is provided a double-layer self-adhesive enameled wire process method, including the steps of:
s100, conveying the base line to a first temperature environment through a pay-off stand to spray a hot melt layer to obtain a hot melt layer wire; the first temperature environment is [300,700] ° C;
s200, dividing the hot-melt layer line into a plurality of temperature control areas with the lengths being set length threshold values; the set length threshold is 0.5,1.5 meters.
S300, conveying each temperature control area of the hot-melt layer wire to a second temperature environment, and recording the initial average temperature value of all the temperature control areas in the second temperature environment as C1; wherein the second temperature environment is [30,50] ° c;
s400, collecting temperature values of all temperature control areas in real time at T1 time intervals; wherein, the T1 time interval is 5 minutes;
s500, calculating the thermal potential value of each temperature control area;
s600, sequentially judging whether the thermal potential value of each temperature control area of the hot-melt layer wire is greater than or equal to a set thermal potential threshold value and smaller than a set temperature threshold value, waiting for time T2 if the thermal potential value is greater than or equal to the set thermal potential threshold value, and turning to the step S500; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
Further, in S100, the method of spraying the hot melt layer to obtain the hot melt layer wire includes:
and coating and baking hot-melt layers on the base string in sequence, wherein the hot-melt layers comprise polyamide imide, aromatic polyamide resin or polyamide resin, and a polyamide imide layer with the thickness of [0.01,0.03] mm and a resin self-adhesive layer with the thickness of [0.02,0.06] mm are respectively formed, so that the molded hot-melt layer wire is obtained.
Further, in S100, the base line is a 0.03-0.200mm copper wire formed by drawing and annealing a copper rod through a wire drawing machine; the wire drawing machine equipment comprises any one of a copper wire drawing machine, a copper-clad steel wire drawing machine, a copper-clad aluminum wire drawing machine, a copper-clad copper wire drawing machine, a cutting wire drawing machine and an enameled wire drawing machine.
Further, in S200, the method of dividing the hot-melt layer wire into the temperature control regions having the plurality of lengths as the set length threshold includes: dividing the hot-melting layer lines into N1 temperature control areas by every other length of the length threshold, wherein the length threshold is TL, the length of the hot-melting layer lines is LR, and N1 is LR/TL; in addition, if the LR/TL has a remainder, the length of the remainder is taken as a single temperature control area, and the total number of the temperature control areas is N1+ 1.
Further, in S400, the method for acquiring the temperature values of the temperature control areas at T1 time intervals in real time includes the following steps: acquiring an average temperature value (an arithmetic average value of the temperature of all pixel points on an infrared thermal imaging image) of a temperature control area in real time through infrared thermal imaging to serve as a temperature value of the temperature control area, or randomly taking s1 temperature sampling points on the temperature control area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as the temperature value of the temperature control area; where s1 takes on an integer value between 3 and 10.
Further, in S500, the method for calculating the thermal potential value of each temperature controlled area includes the following steps:
calculating the thermal potential value of the current temperature control area by the formula HT1 ═ CMax-Cmin | ÷ HMean, wherein HT1 is the thermal potential value of the current temperature control area;
the method for calculating the Cmin, the CMax and the Hmean value comprises the following steps:
taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is lower than the temperature value of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a first direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area lower than the starting point is searched, and taking the direction from the starting point to the temperature control area as a first direction;
if the value of U (r) for the r-th temperature control region is searched for on the thermal fusion layer line along the first direction from the start position satisfies the conditions of U (r) < U (r-1) and U (r) < U (r +1) and
Figure BDA0003261754680000031
in the method, the temperature control area of the r th from the starting point position is taken as a low potential area, the temperature average value of the low potential area is taken as Cmin, or s2 temperature sampling points are randomly taken in the low potential area, and all the temperature sampling points are usedThe arithmetic mean value of the temperature values collected by the temperature sampling points is used as Cmin; wherein, s2 takes on an integer value between 3 and 10, and r is the serial number of the temperature control area with an initial value of 1; the temperature average value is an arithmetic average value of the temperatures of all pixel points on the image of the temperature control area acquired through infrared thermal imaging, or the temperature average value is s1 temperature sampling points randomly selected on the temperature control area, and the arithmetic average value of the temperature values acquired by all the temperature sampling points is used as the temperature value of the temperature control area; where s1 takes on an integer value between 3 and 10.
Taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is higher than that of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a second direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area higher than the starting point is searched, and taking the direction from the starting point to the temperature control area as a second direction;
if the value of U (r) of the r-th temperature control region is searched on the thermal fusion layer line along the second direction from the starting position and satisfies the condition of U (r) > U (r +1) and
Figure BDA0003261754680000032
if U (r) is greater than U (r-1), taking the temperature average value of the r-th temperature control area from the starting position as a high potential area, and taking the temperature average value of the high potential area as CMax, or randomly taking s3 temperature sampling points in the high potential area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as CMax; wherein s3 takes on an integer value between 3 and 10;
wherein U (r) is the temperature tendency, and the calculation method of U (r) is as follows:
Figure BDA0003261754680000033
wherein, Ck3Max { C ] is the temperature value of the k3 th temperature-controlled zone from the start position1,Ck3Temperature values of temperature control areas with the largest temperature values from the 1 st temperature control area to the k3 th temperature control area from the start position are set; min { C1,Ck3Temperature values of temperature control regions having the smallest temperature value from the 1 st temperature control region to the k3 th temperature control region from the start position; wherein k1, k2 and k3 are accumulation variables;
taking a sequence formed by all temperature control regions from a low potential region to a high potential region as a first temperature control sequence, and sequencing the temperature control regions in the first temperature control sequence from small to large according to the temperature values to obtain a second temperature control sequence in an ascending order; and taking the temperature value of the temperature control area of the median or the median of the second temperature control sequence as the Hmean value.
Further, in the method of calculating the thermal potential value of each temperature controlled zone in S500, with the position of the current temperature controlled zone on the thermal fuse layer line as the starting point,
if no temperature control region lower than the temperature value of the starting point exists on the hot melt layer line (for example, the edge of the hot melt layer line is reached or the temperature values of all the temperature control regions in the direction are higher than the temperature value of the starting point), the temperature values of the temperature control regions are sequentially searched from the starting point in any direction on the hot melt layer line until the temperature control region higher than the temperature value of the starting point is searched, and the direction from the starting point to the temperature control region is taken as a first direction;
if the temperature control regions higher than the temperature value of the starting point do not exist on the hot melt layer line (for example, the edge of the hot melt layer line is reached or the temperature values of all the temperature control regions in the direction are lower than the temperature value of the starting point), the temperature values of the temperature control regions are sequentially searched from the starting point in any direction on the hot melt layer line until the temperature control regions lower than the temperature value of the starting point are searched, and the direction from the starting point to the temperature control regions is taken as a second direction.
Further, in S600, the setting method of the thermal potential threshold value includes the following steps:
taking the position of the current temperature control area on the hot melt layer line as a starting point, if the thermal potential value of the current temperature control area is greater than or equal to the arithmetic average value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the first direction from the starting point as a third temperature control sequence, and taking the average value of the thermal potential values of all the temperature control areas in the third temperature control sequence as a thermal potential threshold value;
and if the thermal potential value of the current temperature control area is smaller than the arithmetic mean value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the second direction from the starting point as a fourth temperature control sequence, and taking the mean value of the thermal potential values of all the temperature control areas in the fourth temperature control sequence as a thermal potential threshold value.
Further, in S600, the thermal potential threshold is set as: the arithmetic mean of the thermal potential values of the respective temperature controlled zones.
Further, in S600, the temperature threshold is set to [40,50] ° c.
Further, in S600, the temperature threshold value is the minimum value of the initial average temperature values C1 of all the temperature control areas.
Further, in S600, the formula of the alcohol melt layer is: 67.2% benzyl alcohol C7H8O, 16.8% methanol CH4O, 16.0% polyamide resin (C6H11N2O2) N, and the thickness of the alcohol melt layer was [0.02,0.06] mm.
Further, in S600, the method for spraying the alcohol melt layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire includes: spraying 67.2% of benzyl alcohol, 16.8% of methanol and 16.0% of polyamide resin on an alcohol melting layer in a corresponding temperature control area of the hot melting layer wire by using an enamelling machine or a horizontal enamelling machine, and forming an alcohol melting layer with the thickness of 0.02,0.06 mm on the hot melting layer wire to obtain the double-layer self-adhesive enameled wire.
The invention also provides a double-layer self-adhesive enameled wire process system, which comprises the following steps: a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the computer program to run in the units of the following system:
the hot melt layer spraying unit is used for conveying the base line to a first temperature environment through a pay-off rack to spray a hot melt layer to obtain a hot melt layer wire;
the temperature control area dividing unit is used for dividing the hot-melt layer line into a plurality of sections of temperature control areas with the length being a set length threshold;
the temperature environment switching unit is used for conveying each temperature control area of the hot-melt layer wire to a second temperature environment;
the temperature value acquisition unit is used for acquiring the temperature values of all the temperature control areas in real time at T1 time intervals;
the thermal potential value calculating unit is used for calculating the thermal potential value of each temperature control area;
the alcohol melt layer spraying unit is used for sequentially judging whether the thermal potential value of each temperature control area of the hot melt layer line is greater than or equal to a set thermal potential threshold value and is less than a set temperature threshold value, waiting for time T2 if the thermal potential value is greater than or equal to the set thermal potential threshold value, and switching to the thermal potential value calculating unit; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
The beneficial effect of this disclosure does: the invention provides a double-layer self-adhesive enameled wire process method and a double-layer self-adhesive enameled wire process system, which can dynamically identify the temperature balance in the manufacturing process of an enameled wire, so that the processing temperature difference of two layers of the enameled wire in the processing process is balanced, the two layers of a hot melting layer and an alcohol melting layer of the enameled wire can be compatible, the temperature drop trend between each section of the enameled wire in the processing process is smaller, and the problem of spontaneous combustion in the processing process is avoided.
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The foregoing and other features of the present disclosure will become more apparent from the detailed description of the embodiments shown in conjunction with the drawings in which like reference characters designate the same or similar elements throughout the several views, and it is apparent that the drawings in the following description are merely some examples of the present disclosure and that other drawings may be derived therefrom by those skilled in the art without the benefit of any inventive faculty, and in which:
FIG. 1 is a flow chart of a process for double-layer self-adhesive enameled wire;
fig. 2 is a structural diagram of a double-layer self-adhesive enameled wire process system.
Detailed Description
The conception, specific structure and technical effects of the present disclosure will be clearly and completely described below in conjunction with the embodiments and the accompanying drawings to fully understand the objects, aspects and effects of the present disclosure. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict.
Referring to fig. 1, which is a flow chart illustrating a double-layer self-adhesive enameled wire process method, a double-layer self-adhesive enameled wire process method according to an embodiment of the present invention is described below with reference to fig. 1, the method including the steps of:
s100, conveying the base line to a first temperature environment through a pay-off stand to spray a hot melt layer to obtain a hot melt layer wire; the first temperature environment is [300,700] ° C;
s200, dividing the hot-melt layer line into a plurality of temperature control areas with the lengths being set length threshold values; the set length threshold is 0.5,1.5 meters.
S300, conveying each temperature control area of the hot-melt layer wire to a second temperature environment, and recording the initial average temperature value of all the temperature control areas in the second temperature environment as C1; wherein the second temperature environment is [30,50] ° c;
s400, collecting temperature values of all temperature control areas in real time at T1 time intervals; wherein, the T1 time interval is 5 minutes;
s500, calculating the thermal potential value of each temperature control area;
s600, sequentially judging whether the thermal potential value of each temperature control area of the hot-melt layer line is greater than or equal to a set thermal potential threshold value and smaller than a set temperature threshold value, waiting for time T2 (cooling in a second temperature environment for T2 time) if so, and going to the step S500; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
Further, in S100, the method of spraying the hot melt layer to obtain the hot melt layer wire includes:
and coating and baking hot-melt layers on the base string in sequence, wherein the hot-melt layers comprise polyamide imide, aromatic polyamide resin or polyamide resin, and a polyamide imide layer with the thickness of [0.01,0.03] mm and a resin self-adhesive layer with the thickness of [0.02,0.06] mm are respectively formed, so that the molded hot-melt layer wire is obtained.
Preferably, in S100, the method of spraying the hot melt layer to obtain the hot melt layer wire includes: a hot-melt layer comprising an aromatic polyamide resin or a polyamide resin was coated and baked on the base string to form a resin self-adhesive layer having a thickness of [0.02,0.06] mm, thereby obtaining a molded hot-melt layer wire.
Preferably, in S100, the method of spraying the hot melt layer to obtain the hot melt layer wire includes: a hot-melt layer comprising polyamideimide was coated and baked on the base string to form a polyamideimide layer having a thickness of [0.01,0.03] mm, thereby obtaining a shaped hot-melt layer wire.
Further, in S100, the base line is a 0.03-0.200mm copper wire formed by drawing and annealing a copper rod through a wire drawing machine; the wire drawing machine equipment comprises any one of a copper wire drawing machine, a copper-clad steel wire drawing machine, a copper-clad aluminum wire drawing machine, a copper-clad copper wire drawing machine, a cutting wire drawing machine and an enameled wire drawing machine.
Further, in S200, the method of dividing the hot-melt layer wire into the temperature control regions having the plurality of lengths as the set length threshold includes: dividing the hot-melting layer lines into N1 temperature control areas by every other length of the length threshold, wherein the length threshold is TL, the length of the hot-melting layer lines is LR, and N1 is LR/TL; in addition, if the LR/TL has a remainder, the length of the remainder is taken as a single temperature control area, and the total number of the temperature control areas is N1+ 1.
Further, in S400, the method for acquiring the temperature values of the temperature control areas at T1 time intervals in real time includes the following steps: acquiring the average temperature value of the temperature control area in real time through infrared thermal imaging to serve as the temperature value of the temperature control area, or randomly taking s1 temperature sampling points on the temperature control area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as the temperature value of the temperature control area; where s1 takes on an integer value between 3 and 10.
Further, in S500, the method for calculating the thermal potential value of each temperature controlled area includes the following steps:
calculating the thermal potential value of the current temperature control area by the formula HT1 ═ CMax-Cmin | ÷ HMean, wherein HT1 is the thermal potential value of the current temperature control area;
the method for calculating the Cmin, the CMax and the Hmean value comprises the following steps:
taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is lower than the temperature value of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a first direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area lower than the starting point is searched, and taking the direction from the starting point to the temperature control area as a first direction;
if the value of U (r) for the r-th temperature control region is searched for on the thermal fusion layer line along the first direction from the start position satisfies the conditions of U (r) < U (r-1) and U (r) < U (r +1) and
Figure BDA0003261754680000071
taking the r-th temperature control area from the starting point as a low potential area, and taking the temperature average value of the low potential area as Cmin, or randomly taking s2 temperature sampling points in the low potential area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as Cmin; wherein s2 takes on an integer value between 3 and 10;
taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is higher than that of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a second direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area higher than the starting point is searched, and taking the direction from the starting point to the temperature control area as a second direction;
if the value of U (r) of the r-th temperature control region is searched on the thermal fusion layer line along the second direction from the starting position and satisfies the condition of U (r) > U (r +1) and
Figure BDA0003261754680000072
if U (r) is greater than U (r-1), taking the temperature average value of the r-th temperature control area from the starting position as a high potential area, and taking the temperature average value of the high potential area as CMax, or randomly taking s3 temperature sampling points in the high potential area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as CMax; wherein s3 takes on an integer value between 3 and 10;
wherein U (r) is the temperature tendency, and the calculation method of U (r) is as follows:
Figure BDA0003261754680000073
wherein, Ck3Max { C ] is the temperature value of the k3 th temperature-controlled zone from the start position1,Ck3Temperature values of temperature control areas with the largest temperature values from the 1 st temperature control area to the k3 th temperature control area from the start position are set; min { C1,Ck3Temperature values of temperature control regions having the smallest temperature value from the 1 st temperature control region to the k3 th temperature control region from the start position; wherein k1, k2 and k3 are accumulation variables;
taking a sequence formed by all temperature control regions from a low potential region to a high potential region as a first temperature control sequence, and sequencing the temperature control regions in the first temperature control sequence from small to large according to the temperature values to obtain a second temperature control sequence in an ascending order; and taking the temperature value of the temperature control area of the median or the median of the second temperature control sequence as the Hmean value.
Further, in the method of calculating the thermal potential value of each temperature controlled zone in S500, with the position of the current temperature controlled zone on the thermal fuse layer line as the starting point,
sequentially starting to search the temperature values of the temperature control areas from the starting point to any direction on the hot melt layer line, and if the temperature control areas lower than the temperature value of the starting point do not exist on the hot melt layer line, sequentially starting to search the temperature values of the temperature control areas from the starting point to any direction on the hot melt layer line until the temperature control areas higher than the temperature value of the starting point are searched, wherein the direction from the starting point to the temperature control areas is taken as a first direction;
and if no temperature control area higher than the temperature value of the starting point exists on the hot melt layer line, the temperature values of the temperature control areas are searched from the starting point in sequence towards any direction on the hot melt layer line until the temperature control area lower than the temperature value of the starting point is searched, and the direction from the starting point to the temperature control area is taken as a second direction.
Further, in S600, the setting method of the thermal potential threshold value includes the following steps:
taking the position of the current temperature control area on the hot melt layer line as a starting point, if the thermal potential value of the current temperature control area is greater than or equal to the arithmetic average value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the first direction from the starting point as a third temperature control sequence, and taking the average value of the thermal potential values of all the temperature control areas in the third temperature control sequence as a thermal potential threshold value;
and if the thermal potential value of the current temperature control area is smaller than the arithmetic mean value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the second direction from the starting point as a fourth temperature control sequence, and taking the mean value of the thermal potential values of all the temperature control areas in the fourth temperature control sequence as a thermal potential threshold value.
Further, in S600, the thermal potential threshold is set as: the arithmetic mean of the thermal potential values of the respective temperature controlled zones.
Further, in S600, the temperature threshold is set to [40,50] ° c.
Further, in S600, the temperature threshold value is the minimum value of the initial average temperature values C1 of all the temperature control areas.
Further, in S600, the formula of the alcohol melt layer is: 67.2% benzyl alcohol C7H8O, 16.8% methanol CH4O, 16.0% polyamide resin (C6H11N2O2) N, and the thickness of the alcohol melt layer was [0.02,0.06] mm.
Further, in S600, the method for spraying the alcohol melt layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire includes: spraying 67.2% of benzyl alcohol, 16.8% of methanol and 16.0% of polyamide resin on an alcohol melting layer in a corresponding temperature control area of the hot melting layer wire by using an enamelling machine or a horizontal enamelling machine, and forming an alcohol melting layer with the thickness of 0.02,0.06 mm on the hot melting layer wire to obtain the double-layer self-adhesive enameled wire.
Preferably, the key content part of the double-layer self-adhesive enameled wire process method on the hot-melt laminated wire can be described by the language of C + + as follows:
collecting temperature values of each temperature control area in real time at T1 time intervals;
double timestamp=clock()/5000;
AreaSize size=areaSize(temperature->width,temperature->height);
acquiring each temperature control area of the hot-melt layer wire;
if(!mhi||mhi->width!=size.width||mhi->height!=size.height)
{
if(buf==0)
{buf=(IplTemperature**)malloc(N*sizeof(buf[0]));
memset(buf,0,N*sizeof(buf[0]));
};
for(i=0;i<N;i++)
{areaReleaseTemperature(&buf[i]);
buf[i]=areaCreateTemperature(size,IPL_8U,1);
};
calculating the thermal potential value of each temperature control area;
idx2=(last+1)%N;
last=idx2;
silh=buf[idx2];
// difference between adjacent temperature control regions
areaAbsDiff(buf[idx1],buf[idx2],silh);
V/calculating thermal potential threshold of temperature control area
areaThreshold(silh,silh,diff_threshold,1,AREA);
areaUpdateMotionHistory(silh,mhi,timestamp,MHI);
areaAreatPlaneToPix(mask,0,0,0,dst);
for(i=0;i<seq->total;i++)
{
if (i <0) {// operating on temperature control zone temperature
comp_rect=areaRect(0,0,size.width,size.height);
magnitude=100;};
else{
comp_rect=((AreaConnectedComp*)areaGetSeqElem(seq,i))->rect;
if(comp_rect.width+comp_rect.height<100)
continue;
magnitude=30;
};
Calculating the first or second direction in a selected temperature controlled zone
angle=areaCalcGlobalOrientation(orient,mask,mhi,timestamp);
Calculating the thermal potential value in the temperature-controlled region
count=areaNorm(silh,0,AREA_L1,0);
Judging whether the thermal potential value of each temperature control area of the hot melt layer line is larger than or equal to the set thermal potential threshold value and smaller than the set temperature threshold value in sequence
center=areaPoint((comp_rect.x+comp_rect.width/2),
(comp_rect.y+comp_rect.height/2));
areaCircle(dst,center,areaRound(magnitude*1.2),Temp,3,AREA,0);
areaLine(dst,center,areaPoint(areaRound(center.x+
areaRound(center.y-magnitude*sin(angle*AREA_PI/180))),
color,3,AREA_AA,0);
};
int main(int argc,char**argv)
{
IplTemperature*motion=0;
AreaCapture*capture=0;
if(argc==1||(argc==2&&strlen(argv[1])==1&&isdigit(argv[1][0])))
capture=areaCapture(argc==2,argv[1][0]-'0':0);
else if(argc==2)
if(capture)
{areaNamedWindow("Motion",1);
IplTemperature*temperature;
if(!areaGrabArea(capture))
break;
temperature=areaRetrieveArea(capture);
motion=
areaCreateTemperature(areaSize(temperature->width,temperature->height),8,3);
motion->origin=temperature->origin;
if(areaWaitKey(10)>=0)
break;
}。
The embodiment of the present disclosure provides a double-layer self-adhesive enameled wire process system, as shown in fig. 2, which is a structure diagram of the double-layer self-adhesive enameled wire process system of the present disclosure, and the double-layer self-adhesive enameled wire process system of the embodiment includes: a processor, a memory and a computer program stored in the memory and executable on the processor, the processor implementing the steps in one of the above-described embodiments of the double-layer self-adhesive enameled wire process system when executing the computer program.
The system comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the computer program to run in the units of the following system:
the hot melt layer spraying unit is used for conveying the base line to a first temperature environment through a pay-off rack to spray a hot melt layer to obtain a hot melt layer wire;
the temperature control area dividing unit is used for dividing the hot-melt layer line into a plurality of sections of temperature control areas with the length being a set length threshold;
the temperature environment switching unit is used for conveying each temperature control area of the hot-melt layer wire to a second temperature environment;
the temperature value acquisition unit is used for acquiring the temperature values of all the temperature control areas in real time at T1 time intervals;
the thermal potential value calculating unit is used for calculating the thermal potential value of each temperature control area;
the alcohol melt layer spraying unit is used for sequentially judging whether the thermal potential value of each temperature control area of the hot melt layer line is greater than or equal to a set thermal potential threshold value and is less than a set temperature threshold value, waiting for time T2 if the thermal potential value is greater than or equal to the set thermal potential threshold value, and switching to the thermal potential value calculating unit; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
The double-layer self-adhesive enameled wire process system can be operated in computing equipment such as desktop computers, notebooks, palm computers and cloud servers. The double-layer self-adhesive enameled wire process system can be operated by a system comprising but not limited to a processor and a memory. It will be understood by those skilled in the art that the example is merely illustrative of a two-layer self-adhesive enameled wire processing system, and does not constitute a limitation of a two-layer self-adhesive enameled wire processing system, which may include more or less components than a proportional ratio, or some components in combination, or different components, for example, the two-layer self-adhesive enameled wire processing system may also include input-output devices, network access devices, buses, etc.
The Processor may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic device, discrete hardware component, or the like. The general processor can be a microprocessor or the processor can be any conventional processor and the like, the processor is a control center of the operating system of the double-layer self-adhesive enameled wire process system, and various interfaces and lines are utilized to connect various parts of the operable system of the whole double-layer self-adhesive enameled wire process system.
The memory can be used for storing the computer program and/or the module, and the processor realizes various functions of the double-layer self-adhesive enameled wire process system by running or executing the computer program and/or the module stored in the memory and calling the data stored in the memory. The memory may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data (such as audio data, a phonebook, etc.) created according to the use of the cellular phone, and the like. In addition, the memory may include high speed random access memory, and may also include non-volatile memory, such as a hard disk, a memory, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), at least one magnetic disk storage device, a Flash memory device, or other volatile solid state storage device.
Although the description of the present disclosure has been rather exhaustive and particularly described with respect to several illustrated embodiments, it is not intended to be limited to any such details or embodiments or any particular embodiments, so as to effectively encompass the intended scope of the present disclosure. Furthermore, the foregoing describes the disclosure in terms of embodiments foreseen by the inventor for which an enabling description was available, notwithstanding that insubstantial modifications of the disclosure, not presently foreseen, may nonetheless represent equivalent modifications thereto.

Claims (10)

1. A double-layer self-adhesive enameled wire process method is characterized by comprising the following steps:
s100, conveying the base line to a first temperature environment through a pay-off stand to spray a hot melt layer to obtain a hot melt layer wire;
s200, dividing the hot-melt layer line into a plurality of temperature control areas with the lengths being set length threshold values;
s300, conveying each temperature control area of the hot-melt layer wire to a second temperature environment;
s400, collecting temperature values of all temperature control areas in real time at T1 time intervals;
s500, calculating the thermal potential value of each temperature control area;
s600, sequentially judging whether the thermal potential value of each temperature control area of the hot-melt layer wire is greater than or equal to a set thermal potential threshold value and smaller than a set temperature threshold value, waiting for time T2 if the thermal potential value is greater than or equal to the set thermal potential threshold value, and turning to the step S500; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
2. The double-layer self-adhesive enameled wire process method according to claim 1, wherein in S100, the method for spraying the hot melt layer to obtain the hot melt layer wire comprises:
and coating and baking hot-melt layers on the base string in sequence, wherein the hot-melt layers comprise polyamide imide, aromatic polyamide resin or polyamide resin, and a polyamide imide layer with the thickness of [0.01,0.03] mm and a resin self-adhesive layer with the thickness of [0.02,0.06] mm are respectively formed, so that the molded hot-melt layer wire is obtained.
3. The double-layer self-adhesive enameled wire process method according to claim 1, wherein in S100, the base wire is a 0.03-0.200mm copper wire obtained by drawing and annealing a copper rod through a wire drawing machine; the wire drawing machine equipment comprises any one of a copper wire drawing machine, a copper-clad steel wire drawing machine, a copper-clad aluminum wire drawing machine, a copper-clad copper wire drawing machine, a cutting wire drawing machine and an enameled wire drawing machine.
4. The double-layer self-adhesive enameled wire process method according to claim 1, wherein in S200, the method for dividing the hot-melt layer wire into temperature controlled zones with a plurality of lengths as set length thresholds comprises: dividing the hot-melting layer lines into N1 temperature control areas by every other length of the length threshold, wherein the length threshold is TL, the length of the hot-melting layer lines is LR, and N1 is LR/TL; in addition, if the LR/TL has a remainder, the length of the remainder is taken as a single temperature control area, and the total number of the temperature control areas is N1+ 1.
5. The double-layer self-adhesive enameled wire process method according to claim 1, wherein in S400, the method for collecting the temperature values of each temperature control area in real time at T1 time intervals comprises the following steps: acquiring the average temperature value of the temperature control area in real time through infrared thermal imaging to serve as the temperature value of the temperature control area, or randomly taking s1 temperature sampling points on the temperature control area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as the temperature value of the temperature control area; where s1 takes on an integer value between 3 and 10.
6. The double-layer self-adhesive enameled wire process method according to claim 5, characterized in that in S500, the method for calculating the thermal potential value of each temperature controlled area comprises the following steps:
calculating the thermal potential value of the current temperature control area by the formula HT1 ═ CMax-Cmin | ÷ Hmean, wherein HT1 is the thermal potential value of the current temperature control area;
the method for calculating the Cmin, the CMax and the Hmean value comprises the following steps:
taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is lower than the temperature value of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a first direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area lower than the starting point is searched, and taking the direction from the starting point to the temperature control area as a first direction;
if the value of U (r) for the r-th temperature control region is searched for on the thermal fusion layer line along the first direction from the start position satisfies the conditions of U (r) < U (r-1) and U (r) < U (r +1) and
Figure FDA0003261754670000021
taking the r-th temperature control area from the starting point as a low potential area, and taking the temperature average value of the low potential area as Cmin, or randomly taking s2 temperature sampling points in the low potential area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as Cmin; wherein s2 takes on an integer value between 3 and 10;
taking the position of the current temperature control area on the hot melt layer line as a starting point, and if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is higher than that of the current temperature control area, taking the direction from the starting point to the temperature control area adjacent to the starting point as a second direction; or if the temperature value of the temperature control area adjacent to the starting point on the hot melt layer line is equal to the temperature value of the current temperature control area, sequentially starting to search the temperature value of each temperature control area from the starting point towards any direction on the hot melt layer line until the temperature control area higher than the starting point is searched, and taking the direction from the starting point to the temperature control area as a second direction;
if the value of U (r) of the r-th temperature control region is searched on the thermal fusion layer line along the second direction from the starting position and satisfies the condition of U (r) > U (r +1) and
Figure FDA0003261754670000022
if U (r) is greater than U (r-1), taking the temperature average value of the r-th temperature control area from the starting position as a high potential area, and taking the temperature average value of the high potential area as CMax, or randomly taking s3 temperature sampling points in the high potential area, and taking the arithmetic average value of the temperature values acquired by all the temperature sampling points as CMax; wherein s3 takes on an integer value between 3 and 10;
wherein U (r) is the temperature tendency, and the calculation method of U (r) is as follows:
Figure FDA0003261754670000023
wherein, Ck3Max { C ] is the temperature value of the k3 th temperature-controlled zone from the start position1,Ck3Temperature values of temperature control areas with the largest temperature values from the 1 st temperature control area to the k3 th temperature control area from the start position are set; min { C1,Ck3Temperature values of temperature control regions having the smallest temperature value from the 1 st temperature control region to the k3 th temperature control region from the start position; wherein k1, k2 and k3 are variables;
taking a sequence formed by all temperature control regions from a low potential region to a high potential region as a first temperature control sequence, and sequencing the temperature control regions in the first temperature control sequence from small to large according to the temperature values to obtain a second temperature control sequence in an ascending order; and taking the temperature value of the temperature control area of the median or the median of the second temperature control sequence as the Hmean value.
7. The double-layer self-adhesive enameled wire process method according to claim 6, wherein in S500, in the method of calculating the thermal potential value of each temperature controlled zone, starting from the current position of the temperature controlled zone on the hot-melt layer wire,
sequentially starting to search the temperature values of the temperature control areas from the starting point to any direction on the hot melt layer line, and if the temperature control areas lower than the temperature value of the starting point do not exist on the hot melt layer line, sequentially starting to search the temperature values of the temperature control areas from the starting point to any direction on the hot melt layer line until the temperature control areas higher than the temperature value of the starting point are searched, wherein the direction from the starting point to the temperature control areas is taken as a first direction;
and if no temperature control area higher than the temperature value of the starting point exists on the hot melt layer line, the temperature values of the temperature control areas are searched from the starting point in sequence towards any direction on the hot melt layer line until the temperature control area lower than the temperature value of the starting point is searched, and the direction from the starting point to the temperature control area is taken as a second direction.
8. The double-layer self-adhesive enameled wire process method according to claim 7, characterized in that in S600, the setting method of thermal potential threshold value is as follows:
taking the position of the current temperature control area on the hot melt layer line as a starting point, if the thermal potential value of the current temperature control area is greater than or equal to the arithmetic average value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the first direction from the starting point as a third temperature control sequence, and taking the average value of the thermal potential values of all the temperature control areas in the third temperature control sequence as a thermal potential threshold value;
and if the thermal potential value of the current temperature control area is smaller than the arithmetic mean value of the thermal potential values of all the temperature control areas, taking a sequence formed by all the temperature control areas in the second direction from the starting point as a fourth temperature control sequence, and taking the mean value of the thermal potential values of all the temperature control areas in the fourth temperature control sequence as a thermal potential threshold value.
9. The double-layer self-adhesive enameled wire process method according to claim 1, wherein in S600, the method for spraying the corresponding temperature controlled area with the alcohol-melt layer to obtain the double-layer self-adhesive enameled wire comprises: spraying 67.2% of benzyl alcohol, 16.8% of methanol and 16.0% of polyamide resin on an alcohol melting layer in a corresponding temperature control area of the hot melting layer wire by using an enamelling machine or a horizontal enamelling machine, and forming an alcohol melting layer with the thickness of 0.02,0.06 mm on the hot melting layer wire to obtain the double-layer self-adhesive enameled wire.
10. A double-layer self-adhesive enameled wire process system, which is characterized in that the system comprises: a memory, a processor, and a computer program stored in the memory and executable on the processor, the processor executing the computer program to run in the units of the following system:
the hot melt layer spraying unit is used for conveying the base line to a first temperature environment through a pay-off rack to spray a hot melt layer to obtain a hot melt layer wire;
the temperature control area dividing unit is used for dividing the hot-melt layer line into a plurality of sections of temperature control areas with the length being a set length threshold;
the temperature environment switching unit is used for conveying each temperature control area of the hot-melt layer wire to a second temperature environment;
the temperature value acquisition unit is used for acquiring the temperature values of all the temperature control areas in real time at T1 time intervals;
the thermal potential value calculating unit is used for calculating the thermal potential value of each temperature control area;
the alcohol melt layer spraying unit is used for sequentially judging whether the thermal potential value of each temperature control area of the hot melt layer line is greater than or equal to a set thermal potential threshold value and is less than a set temperature threshold value, waiting for time T2 if the thermal potential value is greater than or equal to the set thermal potential threshold value, and switching to the thermal potential value calculating unit; and if not, spraying an alcohol melting layer on the corresponding temperature control area to obtain the double-layer self-adhesive enameled wire.
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Address after: 528225 No. 18, Dongfeng Road, Songgang Songxia Industrial Park, Shishan town, Nanhai District, Foshan City, Guangdong Province

Patentee after: Guangdong Jingda Rea Special Enameled Wire Co.,Ltd.

Address before: 528000 No. 18, Dongfeng Road, Songgang Songxia Industrial Park, Shishan town, Nanhai District, Foshan City, Guangdong Province

Patentee before: GUANGDONG JINGDA REA SPECIAL ENAMELED WIRE CO.,LTD.