CN113909597B - Method for processing metal-based silicon carbide through photocatalysis assisted jet flow electrolysis - Google Patents

Method for processing metal-based silicon carbide through photocatalysis assisted jet flow electrolysis Download PDF

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CN113909597B
CN113909597B CN202111274424.3A CN202111274424A CN113909597B CN 113909597 B CN113909597 B CN 113909597B CN 202111274424 A CN202111274424 A CN 202111274424A CN 113909597 B CN113909597 B CN 113909597B
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jet flow
silicon carbide
electrolyte
based silicon
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CN113909597A (en
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康小明
王�锋
周靓
张亚欧
赵万生
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Shanghai Jiaotong University
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining

Abstract

The invention relates to photocatalysis-assisted jet electrolysisA method for processing metal-based silicon carbide. The invention electrolyzes metal-based silicon carbide material by photocatalysis-assisted jet, and TiO in the jet 2 The abrasive particle flow impacts to destroy the passivation layer on the surface of the workpiece to accelerate the dissolution of the metal matrix anode, siC reinforced particles are repeatedly and alternately removed through the photocatalytic reaction and the mechanical action of the abrasive particle flow, the metal matrix and the SiC particles can be synchronously removed to obtain higher surface quality of a local processing area, and the method has better application potential in the fields of aerospace, optical precision instruments, electronic packaging and the like.

Description

Method for processing metal-based silicon carbide through photocatalysis-assisted jet electrolysis
Technical Field
The invention belongs to the field of material electrolytic machining, and particularly relates to a method for electrolytically machining metal-based silicon carbide by using photocatalysis assisted jet flow.
Background
The silicon carbide particle reinforced metal matrix composite material is widely applied to the fields of aerospace, automobile industry, electronic industry and the like due to excellent mechanical and physical properties. However, the SiC ceramic particles in the composite material have the characteristics of high hardness, high brittleness, high strength and the like, and when the SiC ceramic particles are machined by adopting a traditional machining method, the phenomena of chip breakage, workpiece edge breakage damage, cutter abrasion and the like are easily generated. In the thermal etching processes such as electric spark machining, laser machining and the like, a recast layer, microcracks, a heat affected zone and the like are easily formed on a workpiece, and the material performance is influenced.
SiC particles are distributed in a soft metal matrix in a non-directional and discontinuous manner, and because the SiC particles are small and have high hardness, the raised SiC particles are distributed on the surface of a material during cutting, or the SiC particles fall to form pits during use to influence the quality of a processed surface, so that the problem that the SiC particles cannot meet the field with high surface precision requirements. Research on SiCp/Al with SiC particles of less than 1 mu m and 10% volume fraction by Hackert et Al, kernel university, germany, finds that the feeding speed is linearly increased along with the increase of current density in a certain range, and the surface roughness is obviously reduced under higher current density; when the current density is increased over 10A/cm2, the roughness is no longer reduced because the SiC particles cannot be dissolved during processing in the NaNO3 neutral electrolyte. The study by AoSanto et al at Tianjin university found that increasing the electrolyte concentration and the processing voltage was beneficial to increase the material removal rate, but resulted in a rougher processed surface with a minimum surface roughness value Ra3.8 μm at 40V. The SiCp/Al material removal mechanism of jet electrolysis processing is analyzed by SiCp/Al in south China Liuzhu et Al, and the metal matrix near SiC particles is removed in an anode dissolving mode, the SiC particles are washed away by jet flow, the larger the particle size of the SiC particles is, the higher the surface roughness value is, and the surface roughness value Ra 3-5 mu m can be obtained. SiCp/Al is also processed by electrochemical jet flow of abrasive materials, and the high-speed abrasive materials can damage an oxide layer generated on the surface of a workpiece and can remove a part of materials, so that higher material removal rate is obtained.
However, because the SiC particles are non-conductive materials, the SiC particles cannot be effectively removed by conventional electrolytic machining, and cannot be removed by anodic dissolution, leaving projections or pits to affect the quality of the machined surface. The application provides a novel method for Photocatalytic Assisted Jet Electrochemical Machining (PAJECM for short), which can synchronously remove a metal matrix and SiC particles to obtain higher surface quality of a local processing area, and has better application potential in the fields of aerospace, optical precision instruments, electronic packaging and the like.
Disclosure of Invention
The invention aims to provide a method for processing metal-based silicon carbide through photocatalysis-assisted jet electrolysis aiming at the problem that raised silicon carbide particles are difficult to remove.
By adopting the method for electrolytically machining the metal-based silicon carbide by using the photocatalysis assisted jet, the problems that the SiC particles are non-conductive materials, the SiC particles cannot be effectively removed by the traditional electrolytic machining, and the processed surface quality is influenced by the left bulges or pits are solved, the metal matrix and the SiC particles can be synchronously removed to obtain the higher surface quality of a local processing area, and the method has better application potential in the fields of aerospace, optical precision instruments, electronic packaging and the like.
The purpose of the invention can be realized by the following scheme:
the invention provides a processing method for electrolyzing metal-based silicon carbide by photocatalysis auxiliary jet, which comprises the following steps:
s1, preparing mixed electrolyte: adding NaNO 3 Solution, H 2 O 2 Solution with TiO 2 Mixing the abrasive particles to form suspension to obtain mixed electrolyte for later use;
s2, forming abrasive particle jet flow: extracting the mixed electrolyte prepared in the step S1, and forming abrasive jet flow to be sprayed onto the surface of a workpiece to be processed through a cathode nozzle;
s3, adding ultraviolet light: coaxially irradiating the electrolyte on the surface of the workpiece by using an ultraviolet lamp;
s4, voltage adding: the cathode is connected with the cathode nozzle, the anode is connected with the workpiece, and the machined workpiece surface is obtained by controlling the applied voltage.
As an embodiment of the present invention, naNO is contained in the mixed electrolyte solution in step S1 3 The mass fraction of (A) is 10-15%; h 2 O 2 The volume fraction of (A) is 1-5%. H 2 O 2 Too small volume fraction, insignificant photocatalytic reaction effect, H 2 O 2 The volume fraction is too large, which affects the electrolytic machining effect.
As an embodiment of the present invention, tiO in the mixed electrolyte solution described in step S1 2 The content of abrasive grains is 1-10g/L. TiO2 2 Low content of abrasive particles, low photocatalytic effect, and TiO 2 The content of the abrasive particles is too high, which causes waste and influences the electrolytic machining effect.
In one embodiment of the invention, the suspension is stirred during the processing to stir the TiO 2 The abrasive particles are uniformly distributed in the electrolyte.
In one embodiment of the present invention, the stirring speed of the stirring is 200rpm to 1000rpm. Stirring was performed using a magnetic stirrer.
As an embodiment of the present invention, the abrasive jet stream in step S2 has a diameter of 0.1mm to 1mm.
As an embodiment of the present invention, the electrolyte flow rate of the abrasive jet in step S2 is 50 to 1000mL/min.
In one embodiment of the present invention, the machining gap between the cathode nozzle and the surface of the workpiece in step S2 is 0.05 to 0.5mm.
As an embodiment of the present invention, the volume fraction of SiC in the SiCp/Al workpiece to be processed in step S2 is 15% to 65%.
As an embodiment of the present invention, the illumination intensity of the ultraviolet lamp in the step S3 is 1000 to 5000mW/cm 2 . The illumination intensity is too low, the photocatalytic reaction effect is not obvious, the illumination intensity is too high, the decomposition speed of the hydrogen peroxide is too high, and the continuous processing is not facilitated.
In one embodiment of the present invention, the voltage in step S4 is a dc voltage or a pulse voltage, and the amplitude of the voltage is 10 to 60V. The pulse width of the pulse voltage is 1-1000 mus, and the frequency is 0.1-50 kHz.
As an embodiment of the present invention, the metal-based silicon carbide includes aluminum-based silicon carbide, copper-based silicon carbide, magnesium-based silicon carbide.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a novel method for machining SiCp/Al by photocatalysis-assisted electrolysis, which can synchronously remove a metal matrix and SiC particles and obtain higher surface quality of a local machining region. According to the comparison of the experimental results of the traditional jet electrochemical machining (JECM) and the photocatalysis auxiliary jet electrochemical machining (PAJECM) under different voltages, it can be seen that:
(1) The photocatalysis-assisted electrochemical machining method has the capability of synchronously removing the metal matrix and SiC particles, and the material removal mechanism is as follows: tiO in jet 2 The abrasive particles impact and damage the passivation layer on the surface of the workpiece to accelerate the dissolution of the metal matrix anode; and repeatedly and alternately removing the SiC reinforced particles through photocatalytic reaction and abrasive particle impact.
(2) The mechanism of repeatedly and alternately removing SiC by the photocatalytic reaction and the impact of the abrasive particles is as follows: tiO2 2 The particles generate electron-hole pairs under UV irradiation, with H 2 O 2 OH with high oxidability is generated through photocatalytic reaction, and the OH and SiC generate chemical reaction to generate SiO with hardness far lower than that of SiC 2 A reaction layer is formed on the surface of the substrate,high speed TiO2 2 And (3) the abrasive particle flow impacts to remove the reaction layer, so that a new SiC surface is exposed and continuously and alternately reacts with OH, and the removal of the SiC particles of the non-conductive material is realized.
(3) The observation of the processed microscopic surface proves that the raised non-conductive SiC particles are effectively removed, compared with the JECM, the roughness value Ra of the processed surface of the PAJECM is reduced from Ra2.5 mu m to Ra1.5 mu m at the processing voltage of 10V, and is reduced from Ra5.7 mu m to Ra2.7 mu m at the processing voltage of 60V, and the PAJECM remarkably improves the locality and the surface quality of the SiCp/Al processing.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of a PAJECM experimental apparatus; wherein, the device comprises a computer 1, a power supply 2, a Z-axis platform 3, an ultraviolet lamp 4, a focusing lens 5, a window mirror 6, a cavity 7, a pressure gauge 8, a valve 9, a pump 10, an electrolyte tank 11, a magnetic stirrer 12, a cathode nozzle 13, a processing bin 14, a workpiece 15, an X-axis platform 16 and a Y-axis platform 17;
FIG. 2 is a schematic diagram of a photocatalytic assisted jet electrochemical machining mechanism of a composite SiCp/Al material; wherein a is a PAJECM process schematic diagram, and b is a silicon carbide removal mechanism schematic diagram;
FIG. 3 is a comparison of the surface topography of JECM and PAJECM processing at different voltages;
FIG. 4 is a comparison of the micro-topography at a processing voltage of 40V, wherein a is JECM conventional jet electrochemical machining and b is PAJECM photocatalytic assisted jet electrochemical machining;
FIG. 5 is a graph comparing experimental results at different processing voltages, wherein a is a pit diameter, b is a pit depth, c is a material removal rate, and d is a surface roughness Ra;
FIG. 6 is a schematic view of the surface of a workpiece after JECM and PAJECM processing, wherein a is the JECM processing and b is the PAJECM processing;
FIG. 7 is EDS spot scan analysis of atomic mass percent of a 40V voltage machined surface, where a is a JECM process and b is a PAJECM process;
FIG. 8 is EDS elemental distribution spectra of a 40V voltage machined surface, where a is JECM machining and b is PAJECM machining.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments. The following examples, which are set forth to provide a detailed description of the invention and a detailed description of the operation, will help those skilled in the art to further understand the present invention. It should be noted that the protection scope of the present invention is not limited to the following embodiments, and several modifications and improvements made on the premise of the idea of the present invention belong to the protection scope of the present invention.
The invention uses the schematic diagram of the experimental device of PAJECM shown in FIG. 1; the device comprises a computer 1, a power supply 2, a Z-axis platform 3, an ultraviolet lamp 4, a focusing lens 5, a window mirror 6, a cavity 7, a pressure gauge 8, a valve 9, a pump 10, an electrolyte tank 11, a magnetic stirrer 12, a cathode nozzle 13, a processing bin 14, a workpiece 15, an X-axis platform 16 and a Y-axis platform 17. The machining cabin 14 is arranged on an X-axis platform 16 and a Y-axis platform 17, the workpiece 15 is positioned in the machining cabin 14, the cavity 7 is arranged on the Z-axis platform 3 and positioned above the workpiece 15, the cathode nozzle 13 is arranged below the cavity 7, and a machining gap is reserved between the cathode nozzle 13 and the workpiece 15; the window mirror 6, the focusing lens 5 and the ultraviolet lamp 4 are sequentially positioned above the cavity 7, and light rays of the ultraviolet lamp 4 can be irradiated to the cavity 7 through the window mirror 6 and the focusing lens 5 and then irradiated to the machining-substituted surface of the workpiece 15 through the cathode nozzle 13; the cavity 7 is connected with an electrolyte tank 11 arranged on a magnetic stirrer 12, and a pressure gauge 8, a valve 9 and a pump 10 are sequentially connected between the cavity 7 and the electrolyte tank 11; the platform is connected with a calculator and used for controlling the movement of the processing bin 14 and the cavity 7; the positive pole of the power supply 2 connects the workpiece 15 and the cathode nozzle 13.
The invention adopts SiCp/Al with 20% SiC volume fraction, the SiC reinforced particle size is 7-15 μm, and the test piece size is 30mm 3mm. The cathode nozzle in the experimental device is made of a stainless steel capillary tube with the outer diameter of 1.0mm and the inner diameter of 0.8mm, and the metering pump pumps the mixed abrasive electrolyte to pass through the cathode nozzle to form jet flow with the diameter of about 0.8 mm. The power supply outputs 10V-60V DC voltage, the cathode is connected with the metal capillary nozzle, and the anode is connected with the workpiece. The SiCp/Al test piece is arranged on an XY platform, and is used in experimentsCan move in two-dimensional direction, the cathode nozzle is arranged on the Z axis, and the gap between the electrodes can be adjusted through inductance. The machining gap is set to a constant value of 0.3mm, and the traditional jet flow electrolytic machining uses NaNO with the mass fraction of 15% 3 As electrolyte working solution, PAJECM uses NaNO with mass fraction of 15% 3 3% volume fraction of H 2 O 2 With 4g/L of TiO 2 The suspension mixed by the abrasive particles is electrolyte working solution, and the magnetic stirrer works all the time, so that TiO is treated in the processing process 2 The abrasive particles are uniformly distributed in the electrolyte solution. Irradiating the electrolyte solution with ultraviolet LED lamp at an illumination intensity of 1500mW/cm 2 The electrolyte flow rate was 200mL/min, the processing time was 30s, and each processing experiment was repeated 3 times, and the result was an average value measured 3 times. The differences of the surface appearance, the material removal rate and the surface roughness of the traditional jet flow electrolytic machining and the photocatalysis auxiliary jet flow electrolytic machining under different machining voltages are researched.
Example 1
PAJECM processing:
(1) Mixing NaNO with mass fraction of 15% 3 3% volume fraction of H 2 O 2 With 4g/L of TiO 2 The abrasive particles are mixed into turbid liquid, and a magnetic stirrer is always operated to ensure that the TiO is always 2 Uniformly distributing the abrasive particles in the electrolyte at the rotating speed of 500rpm to obtain mixed electrolyte;
(2) Pumping the mixed electrolyte obtained in the step (1) by a metering pump, forming abrasive jet flow with the diameter of about 0.8mm by a cathode nozzle, and spraying the abrasive jet flow onto a processed SiCp/Al workpiece, wherein the flow rate of the electrolyte is 200mL/min, the volume fraction of SiC is 20%, and the processing gap is 0.3mm;
(3) Coaxially irradiating the electrolyte solution sprayed in the step (2) by using an ultraviolet lamp, wherein the illumination intensity is 1500mW/cm & lt 2 >
(4) The power supply outputs pulse voltage, the cathode is connected with the metal capillary nozzle, the anode is connected with the workpiece, the amplitude of the voltage is 10-60V, the applied voltage is controlled to be 10V, 20V, 30V, 40V, 50V and 60V respectively, the processing time is 30s, and the relatively flat surface after processing is obtained.
The specific experimental conditions were as follows:
Figure BDA0003328929720000051
Figure BDA0003328929720000061
compared with an electrolytic jet flow mechanism, the PAJECM processing metal and silicon carbide material removal mechanism is more complex, on one hand, siC particles are non-conductive materials and cannot be removed through an electrochemical anode dissolution principle, and on the other hand, the removal mechanism is NaNO 3 In the electrolyte, a passive film is easily formed on the surface of the aluminum matrix, which can hinder the electrochemical reaction. As shown in FIG. 2, the present invention utilizes electrochemical anodic dissolution and TiO dissolution 2 And the abrasive particle jet flow removes the SiC chemical reaction generating layer to realize the removal of the material.
The removal method of the metal-based material by photocatalytic auxiliary jet electrolysis comprises the following steps: (1) TiO2 abrasive particle flow in jet flow impacts and damages a passivation layer on the surface of a workpiece to accelerate the dissolution of the aluminum matrix anode; (2) The SiC reinforced particles are repeatedly and alternately removed through a photocatalytic reaction and a mechanical action of abrasive particle flow. The material removal mechanism of PAJECM is shown in FIG. 2 (b), tiO 2 The particles can generate electron-hole pairs under ultraviolet irradiation, and H 2 O 2 The reaction generates hydroxyl radical OH with high oxidability. OH generated by the photocatalytic reaction and SiC generate chemical reaction to generate SiO with hardness far lower than that of SiC 2 The reaction layer is easy to be removed mechanically, and the reaction process is shown as an equation.
TiO 2 +hv→h + +e - (1)
e - +H 2 O 2 →OH+OH - (2)
h + +H 2 O→H + +OH (3)
SiC+4 OH+O 2 →SiO 2 +CO 2 +2H 2 O (4)
Under the action of jet impact pressure, tiO 2 Abrasive flow SiO removal 2 And the reaction layer exposes a new SiC surface and continuously performs chemical reaction with OH, and the removal of the non-conductive material SiC particles is realized through the repeated alternation of the chemical reaction and the mechanical removal action of the abrasive jet flow.
FIG. 3 is a comparison of surface topography of a JECM (traditional Jet Electrochemical Machining, all known as Jet Electrochemical Machining, under different voltages of 10V-60V, under substantially the same experimental conditions as in example 1, except that the electrolyte is NaNO3 solution with a mass fraction of 15% and no ultraviolet light irradiation) and the PAJECM, with a Machining time of 30s. It can be seen that the central surface of the PAJECM processing pits is brighter than the surface of the JECM at a voltage of 40V to 60V, and the distribution of SiC particles in the central region can be clearly seen, which indicates that the PAJECM processing SiCp/Al composite material can obtain better processing surface quality. The stray corrosion at the edge of the JECM processing pit is more obvious compared with the PAJECM, because a strong oxidizing substance OH is generated in the PAJECM processing process, a passivation layer is easily formed on the processing surface, and the passivation layer is destroyed and removed under the impact of abrasive particle jet flow, so that the removing area of the PAJECM material is concentrated inside the jet flow, and only NaNO3 solute in electrolyte solution used by the JECM can be electrochemically dissolved in the material at the peripheral area of the jet flow. As shown in fig. 4, which is a comparison of the micro-morphology under the processing voltage of 40V, since the SiC particles are non-conductive materials and cannot be removed by anodic dissolution, the micro surface after JECM processing has a large number of SiC particle protrusions, while the micro surface after PAJECM processing is relatively flat, which indicates that the protruding SiC particles are effectively removed, i.e., the PAJECM improves the localization and surface quality of the SiCp/Al processing.
Fig. 5 shows the comparison of experimental results of JECM and PAJECM processing pit diameter, pit depth, material removal rate and surface roughness at different voltages, respectively, and it can be seen that the pit entrance diameter and depth increase with the increase of processing voltage, as shown in fig. 5 (a) and 5 (b), wherein the pit diameter basically tends to be stable after the voltage of 40V, because the current density is maximum at the center of the jet flow due to the jet flow diameter of 0.8mm, and the anodic dissolution rate at the bottom of the pit is greater than that at the side wall as the voltage increases, and the pit depth continuously increases, and the pit entrance diameter tends to be stable. Due to the strong oxidizing property OH generated in the PAJECM processing process, a dense passivation layer is generated on the surface of the aluminum matrix, and although the damage removal is assisted by high-speed abrasive particle jet, the electrochemical anode dissolution rate is reduced to a certain extent, as shown in FIG. 5 (c), the removal rate of the PAJECM material is obviously reduced compared with that of JECM. As shown in FIG. 5 (d), compared with the JECM, the machining surface roughness Ra of the PAJECM is greatly different from Ra2.5 μm to Ra1.5 μm at a machining voltage of 10V and from Ra5.7 μm to Ra2.7 μm at a machining voltage of 60V, mainly because the non-conductive SiC particles cannot be directly removed to form protrusions or fall off to form micro pits during the traditional jet electrolytic machining process, the machining surface roughness is increased, and the influence of the number and the size of the SiC reinforced particles is large. In the process of photocatalytic assisted jet electrolysis, the surfaces of SiC particles exposed in the mixed electrolyte and OH undergo chemical reaction to generate a SiO2 layer with lower hardness, the SiO2 layer is repeatedly removed by the flushing of TiO2 abrasive flow, the generated OH further improves the passivation of the electrolyte, the surface quality is obviously improved, and the schematic diagrams of the surfaces of workpieces before and after processing are shown in FIG. 6.
As shown in fig. 7, the EDS point was used to analyze the spectral measurements of the surface of SiC particles after JECM and PAJECM processing at 40V. And ultrasonically cleaning the processed test piece by using ethanol and distilled water in sequence, drying the test piece by using compressed inert gas, and putting the test piece into a sealing bag to prevent surface oxidation, oil stain adhesion and the like from influencing a surface element measurement result. It can be seen that the contents of the Si element, C element, and O element on the surface of the SiC particle after JECM processing were 65.82%, 22.82%, and 6.81%, respectively, whereas the content of the Si element on the surface of the SiC particle after PAJECM processing was reduced to 41.36%, the content of the C element was slightly increased to 28.97%, and the content of the O element was increased to 24.24%, which indicates that oxides were generated on the surface of the SiC particle after PAJECM processing.
As shown in fig. 8, the EDS element distribution diagram shows that the distribution of C elements follows the distribution of Si elements after JECM processing, and the distribution of O elements is relatively uniform; the distribution of O element is obviously the same as that of Si element after PAJECM processing, which indicates that SiC generates Si-containing oxide, and the product is presumed to be SiO according to the numerical value of atomic mass percent 2 . Thereby verifying the chemical reaction equationIn the formulae (1) to (4), OH formed by the photocatalytic reaction chemically reacts with SiC to form SiO having a low hardness 2 And (3) a reaction layer.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (10)

1. A method for processing metal-based silicon carbide through photocatalysis assisted jet flow electrolysis is characterized by comprising the following steps:
s1, preparing mixed electrolyte: adding NaNO 3 Solution, H 2 O 2 Solution with TiO 2 Mixing the abrasive particles to form suspension to obtain mixed electrolyte for later use;
s2, forming abrasive particle jet flow: extracting the mixed electrolyte prepared in the step S1, and forming abrasive jet flow to be sprayed onto the surface of a workpiece to be processed through a cathode nozzle;
s3, adding ultraviolet light: coaxially irradiating the electrolyte on the surface of the workpiece by using an ultraviolet lamp;
s4, voltage adding: the cathode is connected with the cathode nozzle, the anode is connected with the workpiece, and the machined workpiece surface is obtained by controlling the applied voltage.
2. The method for electrolytically machining metal-based silicon carbide through the photocatalytic auxiliary jet flow as claimed in claim 1, wherein NaNO is contained in the mixed electrolyte in the step S1 3 The mass fraction of (A) is 10% -15%; h 2 O 2 The volume fraction of (A) is 1-5%.
3. The method of claim 1, wherein the step S1 is performed by mixing TiO in the electrolyte solution 2 The content of abrasive grains is 1-10g/L.
4. The photocatalytic assisted jet electrochemical machining metal of claim 1The method for preparing silicon carbide is characterized in that the turbid liquid is stirred all the time in the processing process to ensure that TiO is mixed 2 The abrasive particles are uniformly distributed in the electrolyte.
5. The method of claim 4, wherein the stirring speed of the stirring is 200-1000 rpm.
6. The method for electrolytically machining metal-based silicon carbide through the photocatalytic auxiliary jet flow according to claim 1, wherein the diameter of the abrasive jet flow in the step S2 is 0.1mm to 1mm.
7. The method for electrolytically machining metal-based silicon carbide through the photocatalytic auxiliary jet flow as claimed in claim 1, wherein the electrolyte flow rate of the abrasive jet flow in the step S2 is 50-1000 mL/min.
8. The method of claim 1, wherein the machining gap between the cathode nozzle and the surface of the workpiece in step S2 is 0.05-0.5 mm.
9. The method for electrolytically processing the metal-based silicon carbide through the photocatalytic auxiliary jet flow as claimed in claim 1, wherein the illumination intensity of the ultraviolet lamp in the step S3 is 1000-5000 mW/cm 2 。
10. The method for electrolytically machining metal-based silicon carbide through the photocatalytic auxiliary jet flow according to claim 1, wherein the voltage in the step S4 is direct current voltage or pulse voltage, and the amplitude of the voltage is 10-60V.
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