CN113905314A - Silicon microphone and processing method thereof - Google Patents
Silicon microphone and processing method thereof Download PDFInfo
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- CN113905314A CN113905314A CN202111105568.6A CN202111105568A CN113905314A CN 113905314 A CN113905314 A CN 113905314A CN 202111105568 A CN202111105568 A CN 202111105568A CN 113905314 A CN113905314 A CN 113905314A
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- circuit board
- chip
- thermosetting plastic
- plastic film
- silicon microphone
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 38
- 239000002985 plastic film Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000428 dust Substances 0.000 claims description 11
- 239000002390 adhesive tape Substances 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000007781 pre-processing Methods 0.000 claims description 5
- 238000010330 laser marking Methods 0.000 claims description 3
- 238000012805 post-processing Methods 0.000 claims description 3
- 238000007790 scraping Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 2
- 238000007689 inspection Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 8
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/12—Sanitary or hygienic devices for mouthpieces or earpieces, e.g. for protecting against infection
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The invention discloses a silicon microphone and a processing method thereof, and relates to the technical field of microphones. According to the silicon microphone, the sound pressure sensing chip, the ASIC chip and the circuit board substrate are connected in an inverted mode, the inverted process simplifies the process flow, improves the production efficiency, effectively realizes the organic combination of stable connection and minimized size, meanwhile, the connection stability of the thermosetting plastic film layer and the circuit board substrate is higher than that of the conventional conductive adhesive, welding operation is not needed, and the problem that the chip is possibly polluted in the welding process is avoided.
Description
Technical Field
The invention relates to the technical field of microphones, in particular to a silicon microphone and a processing method thereof.
Background
With the requirement of electronic products such as mobile phones, notebooks, hearing aids, headsets and the like on the size of internal parts becoming smaller and smaller, a large number of silicon microphones with smaller size and better quality are applied, and the silicon microphones are also called as MEMS microphones, are microphones manufactured based on MEMS technology and are composed of MEMS boost sensor chips, ASIC chips, sound cavities and RF suppression circuits. The MEMS sound pressure sensing chip is a micro capacitor formed by a silicon diaphragm and a silicon back plate, and can convert sound pressure change into capacitance change, and then the capacitance reduction change of the ASIC chip is converted into an electric signal to realize sound-sound conversion.
The prior art directly utilizes conductive adhesive to bond a metal shell and a circuit board substrate together, and the technology can realize better electric connection, but the bonding strength of the conductive adhesive is not enough, so that the mechanical strength of a product is not enough easily.
Disclosure of Invention
It is therefore an object of the present invention to provide a silicon microphone and a method for manufacturing the same, which solves the above problems.
In order to achieve the purpose, the invention adopts the technical scheme that: a silicon microphone and a processing method thereof comprise a circuit board substrate, a sound pressure sensing chip and an ASIC chip, wherein the sound pressure sensing chip and the ASIC chip are connected with the circuit board substrate in an inverted mode, a sensing area is arranged on the sound pressure sensing chip, a sound through hole is formed in the circuit board substrate, the sensing area corresponds to the sound through hole, a dust screen is fixedly arranged on the lower surface of the circuit board substrate, the dust screen corresponds to the sound through hole, a thermosetting plastic film layer is arranged on the upper surface of the circuit board substrate, the sound pressure sensing chip and the ASIC chip are wrapped by the thermosetting plastic film layer, the inverted connection of the sound pressure sensing chip and the ASIC chip with the circuit board substrate simplifies the technological process, improves the production efficiency, effectively realizes the organic combination of stable connection and minimized size of a circuit board, and simultaneously, the connection stability of the thermosetting plastic film layer and the substrate is higher compared with the conventional conductive adhesive, and the welding operation is not needed, so that the problem of chip pollution possibly generated in the welding process is avoided.
Preferably, the upper surfaces of the sound pressure sensing chip and the ASIC chip are both provided with high shielding sheets, and by means of the high shielding sheets, the thermosetting plastic film is prevented from wrapping and invading into the rear cavity, and meanwhile, a regular rear cavity structure is formed, so that stable product performance is guaranteed.
Preferably, the thermosetting plastic film layer is a tin paste layer.
Preferably, the dust screen is fixedly connected to the lower surface of the circuit board substrate through the adhesive tape, and the dust screen is fixed through the adhesive tape, so that the dust screen is convenient to replace and clean while playing a dustproof role.
A processing method of a silicon microphone comprises the following steps:
step 1: preprocessing a circuit board substrate;
step 2: pasting a conductive double-sided adhesive tape on the sound pressure sensing chip and the ASIC chip, and connecting the sound pressure sensing chip and the ASIC chip on the circuit board substrate through a flip-chip process;
step 3: covering the circuit board substrate with a thermosetting plastic film, and heating and pressurizing the thermosetting plastic film after vacuumizing;
step 4: baking and curing the heated and pressurized thermosetting plastic film to obtain a thermosetting plastic film layer;
step 5: scraping the redundant thermosetting plastic film layer;
step 6: and carrying out shell pasting and post-treatment on the processed circuit board substrate.
Preferably, the Step1 includes preprocessing the circuit board substrate, including wafer grinding, wafer mounting, wafer cutting and wafer detection, where the wafer grinding, wafer mounting, wafer cutting and wafer detection are the most important processes in the preprocessing process of the circuit board substrate, and are the prerequisite for ensuring stable operation of the circuit board substrate.
Preferably, in Step3, the high-shielding sheet is baked and cured on the sound pressure sensing chip and the ASIC chip before the thermosetting plastic film is covered, and by arranging the high-shielding sheet, the thermosetting plastic film is prevented from wrapping and invading into the rear cavity, and a regular rear cavity structure is formed, so that the performance stability of the product is ensured.
Preferably, in the Step3, the temperature is 60 ℃, the error is not more than 5 ℃, the pressure is 0.1Mpa, the error is not more than 0.02Mpa, the time of pressurizing and heating is 10s, and the error is not more than 3s, and the error can be reduced to the maximum extent by controlling the temperature, the pressure and the time, so that the thermosetting plastic film layer is ensured to meet the requirements.
Preferably, the post-processing after the shell is attached in Step6 comprises laser marking, cutting, baking and curing, detecting, taping and warehousing.
The invention has the following beneficial effects:
firstly, the silicon microphone has the advantages that the sound pressure sensing chip, the ASIC chip and the circuit board substrate are connected in an inverted mode, the inverted process simplifies the process flow, improves the production efficiency, effectively realizes the organic combination of stable connection and minimized size, meanwhile, the connection stability of the thermosetting plastic film layer and the circuit board substrate is higher than that of the conventional conductive adhesive, the welding operation is not needed, and the problem that the chip is polluted in the welding process is avoided.
Secondly, the processing method of the silicon microphone is simple and efficient, the cost is controllable, the processing precision is high, and the popularization value is correspondingly improved.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a silicon microphone according to the present invention;
figure 2 is a top view of a silicon microphone of the present invention;
figure 3 is a schematic cross-sectional view taken along line a-a of figure 2 of a silicon microphone in accordance with the present invention;
figure 4 is a flow chart of a method of manufacturing a silicon microphone in accordance with the present invention.
In the figure: 1. a circuit board substrate; 2. a sound through hole; 3. an ASIC chip; 4. a sound pressure sensing chip; 5. a sensing region; 6. a dust screen; 7. a thermosetting plastic film layer.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The first embodiment is as follows:
please refer to fig. 1-3: a silicon microphone and a processing method thereof comprise a circuit board substrate 1, a sound pressure sensing chip 4 and an ASIC chip 2, wherein the sound pressure sensing chip 4 and the ASIC chip 3 are connected with the circuit board substrate 1 in an inverted mode, a sensing area 5 is arranged on the sound pressure sensing chip 4, a sound through hole 2 is formed in the circuit board substrate 1, the sensing area 5 corresponds to the sound through hole 2, a dust screen 6 is fixedly arranged on the lower surface of the circuit board substrate 1, the dust screen 6 corresponds to the sound through hole 2, a thermosetting plastic film layer 7 is arranged on the upper surface of the circuit board substrate 1, and the thermosetting plastic film layer 7 wraps the sound pressure sensing chip 4 and the ASIC chip 3.
Through with acoustic pressure sensing chip 4 and ASIC chip 3 and the flip-chip interconnection of circuit board base plate 1, the flip-chip technology has simplified process flow, has improved production efficiency, and the effectual organic combination of realizing connection stability and size minimizing, simultaneously, thermosetting plastic rete 7 is higher for conventional conducting resin with circuit board base plate 1 connection stability, and does not need the welding operation, has avoided the problem of the pollution chip that welding process probably produced.
Further, the sound pressure sensing chip 4 and the ASIC chip 3 are each provided with a high-shielding sheet on the upper surface.
Through setting up high shielding sheet, avoid thermosetting plastic film parcel formula to invade the rear chamber, formed regular rear chamber structure simultaneously, guaranteed that product property can stabilize.
Further, the thermosetting plastic film layer 7 is a solder paste layer.
Further, the dust screen 6 is fixedly connected to the lower surface of the circuit board substrate 1 through an adhesive tape.
The dustproof net 6 is fixed through the adhesive tape, so that the dustproof net 6 is convenient to replace and clean while the dustproof effect is achieved.
In this scheme, the circuit board substrate 1 may be a known printed circuit board made of various materials, for example, it may be a silicon substrate, an epoxy resin substrate, and the like, and preferably may be an epoxy resin substrate, and the sound pressure sensing chip 4 and the ASIC chip 3 may be known chips of various types, which are known in the art and are not described herein again.
Example two:
please refer to fig. 4: a processing method of a silicon microphone comprises the following steps:
step 1: preprocessing a circuit board substrate 1;
step 2: pasting a conductive double-sided adhesive tape on the sound pressure sensing chip 4 and the ASIC chip 3, and connecting the sound pressure sensing chip 4 and the ASIC chip 3 on the circuit board substrate 1 through a flip-chip process;
step 3: covering the circuit board substrate 1 with a thermosetting plastic film, and heating and pressurizing the thermosetting plastic film after vacuumizing;
step 4: baking and curing the heated and pressurized thermosetting plastic film to obtain a thermosetting plastic film layer 7;
step 5: scraping the redundant thermosetting plastic film layer 7;
step 6: and performing shell pasting and post-treatment on the processed circuit board substrate 1.
Further, the pretreatment of the circuit board substrate 1 in Step1 includes wafer grinding, wafer mounting, wafer cutting and wafer detection, and the wafer grinding, the wafer mounting, the wafer cutting and the wafer detection are the most important processes in the pretreatment process of the circuit board substrate 1, and are the precondition for ensuring the stable operation of the circuit board substrate 1.
Further, in Step3, baking and curing the high-shielding sheet on the sound pressure sensing chip 4 and the ASIC chip 3 before covering the thermosetting plastic film, and by arranging the high-shielding sheet, the thermosetting plastic film is prevented from wrapping and invading into the rear cavity, and meanwhile, a regular rear cavity structure is formed, so that the performance stability of the product is ensured.
Further, in the pressurizing and heating process in Step3, the temperature is 60 ℃, the error is not more than 5 ℃, the pressure is 0.1Mpa, the error is not more than 0.02Mpa, the pressurizing and heating time is 10s, and the error is not more than 3s, the error can be reduced to the maximum extent by controlling the temperature, the pressure and the time, and the thermosetting plastic film layer 7 is ensured to meet the requirements.
Further, post-processing after the shell is attached in Step6 comprises laser marking, cutting, baking and curing, detecting, taping and warehousing.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. The utility model provides a silicon microphone, includes circuit board base plate (1), acoustic pressure sensing chip (4) and ASIC chip (3) with circuit board base plate (1) flip-chip interconnection, be provided with induction zone (5) on acoustic pressure sensing chip (4), seted up on circuit board base plate (1) and led to sound hole (2), induction zone (5) and led to sound hole (2) position corresponding, fixed surface installs dust screen (6) under circuit board base plate (1), dust screen (6) and lead to sound hole (2) position corresponding, circuit board base plate (1) upper surface is provided with thermosetting plastic rete (7), thermosetting plastic rete (7) parcel acoustic pressure sensing chip (4) and ASIC chip (3).
2. A silicon microphone as claimed in claim 1 wherein: the upper surfaces of the sound pressure sensing chip (4) and the ASIC chip (3) are both provided with high shielding sheets.
3. A silicon microphone as claimed in claim 1 wherein: the thermosetting plastic film layer (7) is a tin paste layer.
4. A silicon microphone as claimed in claim 1 wherein: the dustproof net (6) is fixedly connected to the lower surface of the circuit board substrate (1) through adhesive tapes.
5. A processing method of a silicon microphone is characterized by comprising the following steps:
step 1: preprocessing a circuit board substrate (1);
step 2: pasting a conductive double-sided adhesive tape on the sound pressure sensing chip (4) and the ASIC chip (3), and connecting the sound pressure sensing chip (4) and the ASIC chip (3) on the circuit board substrate (1) through a flip-chip process;
step 3: covering the circuit board substrate with a thermosetting plastic film, and heating and pressurizing the thermosetting plastic film after vacuumizing;
step 4: baking and curing the heated and pressurized thermosetting plastic film to obtain a thermosetting plastic film layer (7);
step 5: scraping the redundant thermosetting plastic film layer (7);
step 6: and (3) carrying out shell pasting and post-treatment on the processed circuit board substrate (1).
6. A method as claimed in claim 5, wherein the Step1 is performed on the circuit board substrate (1) by wafer grinding, wafer mounting, wafer cutting and wafer inspection.
7. A method of manufacturing a silicon microphone as claimed in claim 5 wherein: in the Step3, the high-shielding sheet is baked and cured on the sound pressure sensing chip (4) and the ASIC chip (3) before the thermosetting plastic film is covered.
8. A method of manufacturing a silicon microphone as claimed in claim 5 wherein: in the Step3, the temperature is 60 ℃, the error is not more than 5 ℃, the pressure is 0.1Mpa, the error is not more than 0.02Mpa, the pressurizing and heating time is 10s, and the error is not more than 3 s.
9. A method of manufacturing a silicon microphone as claimed in claim 5 wherein: and the post-processing after the shell is attached in Step6 comprises laser marking, cutting, baking and curing, detecting, taping and warehousing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111105568.6A CN113905314A (en) | 2021-09-22 | 2021-09-22 | Silicon microphone and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111105568.6A CN113905314A (en) | 2021-09-22 | 2021-09-22 | Silicon microphone and processing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN113905314A true CN113905314A (en) | 2022-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111105568.6A Pending CN113905314A (en) | 2021-09-22 | 2021-09-22 | Silicon microphone and processing method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110298064A1 (en) * | 2009-02-06 | 2011-12-08 | Epcos Ag | Sensor module and method for producing sensor modules |
| US20130140656A1 (en) * | 2010-07-08 | 2013-06-06 | Epcos Ag | MEMS Microphone And Method For Producing The MEMS Microphone |
| CN110248298A (en) * | 2019-05-13 | 2019-09-17 | 苏州捷研芯纳米科技有限公司 | Silicon microphone and its processing method |
-
2021
- 2021-09-22 CN CN202111105568.6A patent/CN113905314A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110298064A1 (en) * | 2009-02-06 | 2011-12-08 | Epcos Ag | Sensor module and method for producing sensor modules |
| US20130140656A1 (en) * | 2010-07-08 | 2013-06-06 | Epcos Ag | MEMS Microphone And Method For Producing The MEMS Microphone |
| CN110248298A (en) * | 2019-05-13 | 2019-09-17 | 苏州捷研芯纳米科技有限公司 | Silicon microphone and its processing method |
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