CN113896556B - Preparation method of low-dielectric-loss silicon carbide fiber reinforced ceramic composite material - Google Patents

Preparation method of low-dielectric-loss silicon carbide fiber reinforced ceramic composite material Download PDF

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CN113896556B
CN113896556B CN202111281748.XA CN202111281748A CN113896556B CN 113896556 B CN113896556 B CN 113896556B CN 202111281748 A CN202111281748 A CN 202111281748A CN 113896556 B CN113896556 B CN 113896556B
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silicon carbide
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CN113896556A (en
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吴宝林
侯振华
吴迪
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Jiangxi Xinda Hangke New Material Technology Co ltd
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Abstract

The invention provides a preparation method of a silicon carbide fiber reinforced ceramic composite material with low dielectric loss, which comprises the following steps: siC @ SiO 2 Preparation of core-shell structure and SiC @ SiO of lanthanum oxide film deposited on surface 2 Preparing a core-shell structure and preparing a silicon carbide fiber reinforced ceramic composite material with low dielectric loss. The invention also provides the low dielectric loss silicon carbide fiber reinforced ceramic composite material prepared by the method. According to the low dielectric loss silicon carbide fiber reinforced ceramic composite material provided by the invention, the toughness of the material is greatly improved by dispersing silicon carbide fibers in the silicon carbide ceramic, and SiC @ SiO is prepared by utilizing the silicon carbide fibers 2 The core-shell structure reduces the dielectric parameters of the silicon carbide fiber, and simultaneously, materials such as silicon oxide and the like are dispersed in the silicon carbide ceramic, so that the dielectric parameters of the silicon carbide ceramic are further reduced, and the insulativity is improved; while SiC @ SiO 2 The lanthanum oxide film is deposited on the surface of the core-shell structure, the oxidation resistance of the fiber can be effectively improved, the intensity damage lanthanum oxide caused by fiber oxidation is reduced, and the volatilization amount of a boron oxide compound in the batch melting process can be reduced.

Description

Preparation method of low-dielectric-loss silicon carbide fiber reinforced ceramic composite material
Technical Field
The invention belongs to the field of new materials, and particularly relates to a preparation method of a low-dielectric-loss silicon carbide fiber reinforced ceramic composite material and a prepared aluminum oxide fiber reinforced silicon carbide ceramic material.
Background
Ceramic materials have many advantages not comparable to other materials, but their brittleness is an inevitable fatal disadvantage, and the brittleness of ceramic materials greatly affects the reliability and consistency of material properties. Ceramic materials are polycrystalline structures consisting of ionic or covalent bonds and lack a slip system which promotes the deformation of the material, which, once subjected to an applied load, together with the presence of micro-defects on the surface of the material, which are difficult to avoid by ceramic processes, may constitute sources of cracks at which stresses are concentrated at the tips of these cracks, and in which there are no other systems which consume external energy, exchanged only by new free energy, which is the energy absorbed by the new surface formed by the propagation of the crack tip, with the result that the crack rapidly propagates and is manifested as a so-called brittle fracture. It follows that the brittleness of a ceramic material is determined by the chemical bonding properties of the substance and its microstructure. Therefore, in order to make silicon carbide exhibit its excellent wear resistance, its brittleness, i.e., toughness of the silicon carbide ceramic, should be overcome first.
In order to improve the toughness of silicon carbide ceramics, a great deal of scientific research is carried out. The fiber reinforcement is a development direction for overcoming the brittleness problem of ceramic materials, and the fiber reinforced ceramic matrix composite not only maintains the advantages of high temperature resistance, corrosion resistance, low expansion and the like of the ceramic materials, but also has the advantages of high strength, high toughness and high specific strength of fibers, and has wide application prospect. The fiber reinforced ceramic matrix composite mainly comprises reinforcement fibers, an interface layer and a matrix material, and can realize the combination of multiple performances by selecting different reinforcement fibers and ceramic matrixes, thereby meeting the requirements of aircraft parts on the performances. The fiber reinforced ceramic matrix composite prepared aiming at the high temperature requirement mainly comprises: carbon fiber, quartz fiber, and silicon carbide fiber reinforced ceramic matrix composites.
The silicon carbide fiber reinforced ceramic matrix composite material is an ideal material for heat-resistant structural members in the fields of aerospace, nuclear energy and the like by virtue of the advantages of high specific strength, high-temperature oxidation resistance, ablation resistance, low density and the like. The loss characteristics of silicon carbide fibers are related to their electrical properties, and for applications in the insulation field, it is desirable that the resistivity of the silicon carbide fibers be as high as possible to reduce the microwave losses incurred by the silicon carbide fibers. Although the resistivity of the silicon carbide fiber is far higher than that of the carbon fiber, the resistivity of the silicon carbide fiber prepared by the traditional method is between 1 and 10 ohm-cm, and the dielectric loss of the silicon carbide fiber is still larger. The Si-C-O structure in the silicon carbide fiber and the carbon-rich layer at the surface are the major factors affecting the resistivity of the silicon carbide fiber. At present, the researchers mainly improve the resistivity of the silicon carbide fiber by changing the sintering atmosphere of the silicon carbide fiber, reducing the surface carbon content and increasing the oxygen content. The existence of the Si-C-O structure can cause the resistivity of the silicon carbide fiber to be increased, so that the silicon carbide fiber can be applied to the fields of insulation and dielectric. However, the Si-C-O structure has poor high-temperature stability, can be decomposed at high temperature to form SiO2 and CO, and has poor temperature resistance compared with KD-I fiber, and higher requirements are provided for the preparation process of coatings and composite materials.
Disclosure of Invention
The technical problem is as follows: in order to solve the defects of the prior art, the invention provides a preparation method of a low-dielectric-loss silicon carbide fiber reinforced ceramic composite material and an aluminum oxide fiber reinforced silicon carbide ceramic material prepared by the preparation method.
The technical scheme is as follows: the invention provides a preparation method of a low dielectric loss silicon carbide fiber reinforced ceramic composite material, which comprises the following steps:
(1)SiC@SiO 2 preparing a core-shell structure: placing the silicon carbide fiber in a high-frequency induction furnace, carrying out thermal oxidation treatment in the air atmosphere, and cooling along with the furnace to obtain SiC @ SiO 2 A core-shell structure;
(2) SiC @ SiO with lanthanum oxide film deposited on surface 2 Preparing a core-shell structure: by chemical vapour deposition on SiC @ SiO 2 Depositing a lanthanum oxide film on the surface of the core-shell structure;
(3) Preparing a low dielectric loss silicon carbide fiber reinforced ceramic composite material: siC @ SiO of the lanthanum oxide film deposited on the surface prepared in the step (2) 2 Mixing the core-shell structure, boron compound, silicon nitride and silicon dioxide, loading into a dry pressing mould, prepressing at 4-6MPa for 0.5-3min to obtain a blank, placing the blank in a crucible, vacuumizing, heating, vacuum sintering, and cooling to obtain the final product.
In the step (1), the thermal oxidation treatment conditions are as follows: performing thermal oxidation treatment at 1400-1500 deg.C for 1-2min.
In the step (2), the chemical vapor deposition step comprises: s1, lanthanum source and SiC @ SiO 2 Respectively placing the core-shell structures into a cavity of a tubular furnace, vacuumizing the cavity, introducing transport gas to adjust the pressure intensity in the cavity, heating the cavity to 800-1100 ℃, adjusting the pressure intensity in the cavity through the flow of the transport gas to enable the pressure intensity in the cavity to be in a low-pressure state, and introducing an oxygen source to grow a film; s2, maintaining the temperature, the pressure in the cavity, the flow of the transport gas and the oxygen source during the growth of the S1, and carrying out in-situ post-annealing treatment; and S3, closing the oxygen and the heat source, adjusting the pressure in the cavity, naturally cooling to room temperature in the atmosphere of the transport gas, and obtaining the gallium oxide epitaxial film on the substrate.
Preferably, the lanthanum source is metal lanthanum, the transport gas is nitrogen or argon, and the oxygen source is oxygen; before heating, the pressure in the cavity is adjusted to 100-760Torr by the transport gas, the gas flow of the transport gas is 400-1000sccm, after heating, the pressure in the cavity is adjusted to 0.1-10Torr by the transport gas, and the gas flow of the transport gas is 10-100sccm; the oxygen gas flow rate is 10-100sccm.
In the step (3), the raw materials are used in the following amounts: siC @ SiO of surface deposited lanthanum oxide film 2 100 parts of core-shell structure, 3-4 parts of boron compound, 1-2 parts of silicon nitride and 1-3 parts of silicon dioxide in parts by weight.
In the step (3), the boron compound is boron nitride or boron carbide.
In the step (3), the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, sintering temperature 2000-2200 deg.C; the sintering time is 10-24h.
In the step (3), the temperature rise condition is as follows: when the temperature is increased from room temperature to 1650-1850 ℃, the heating rate is 50-60 ℃/min, and when the temperature is increased from 1650-1850 ℃ to 2000-2200 ℃, the heating rate is 10-20 ℃/min; cooling conditions are as follows: the cooling rate is 10-20 ℃/min from 2000-2200 ℃ to 1650-1850 ℃, and the cooling rate is 50-60 ℃/min from 1650-1850 ℃ to room temperature.
The invention also provides the low dielectric loss silicon carbide fiber reinforced ceramic composite material prepared by the method.
The invention also provides a low dielectric loss silicon carbide fiber reinforced ceramic composite material, which comprises: comprises silicon carbide doped with boron compound, silicon nitride and silicon dioxide, and SiC @ SiO dispersed in the silicon carbide and deposited with lanthanum oxide film on the surface 2 A core-shell structure.
Has the advantages that: according to the low dielectric loss silicon carbide fiber reinforced ceramic composite material provided by the invention, the toughness of the material is greatly improved by dispersing silicon carbide fibers in the silicon carbide ceramic, and SiC @ SiO is prepared by utilizing the silicon carbide fibers 2 The core-shell structure reduces the dielectric parameters of the silicon carbide fiber, and simultaneously, materials such as silicon oxide and the like are dispersed in the silicon carbide ceramic, so that the dielectric parameters of the silicon carbide ceramic are further reduced, and the insulativity is improved; while SiC @ SiO 2 The lanthanum oxide film is deposited on the surface of the core-shell structure and can effectively promote the fiberThe oxidation resistance of the composite material reduces the strength damage of lanthanum caused by fiber oxidation, and can also reduce the volatilization amount of boron oxide compounds in the melting process of the batch materials.
Drawings
FIG. 1 is an SEM image of a high insulation silicon carbide fiber reinforced ceramic composite material prepared by the method.
Detailed Description
The present invention is further explained below.
Example 1
The preparation method of the low dielectric loss silicon carbide fiber reinforced ceramic composite material comprises the following steps:
(1)SiC@SiO 2 preparing a core-shell structure: placing the silicon carbide fiber in a high-frequency induction furnace, carrying out thermal oxidation treatment in the air atmosphere, and cooling along with the furnace to obtain SiC @ SiO 2 A core-shell structure; the thermal oxidation treatment conditions were: thermal oxidation treatment at 1450 deg.C for 1.5min.
(2) SiC @ SiO with lanthanum oxide film deposited on surface 2 Preparing a core-shell structure: by chemical vapour deposition on SiC @ SiO 2 Depositing a lanthanum oxide film on the surface of the core-shell structure;
the chemical vapor deposition steps are as follows: s1, lanthanum source and SiC @ SiO 2 Respectively placing the core-shell structures into a cavity of a tubular furnace, vacuumizing the cavity, introducing transport gas to adjust the pressure intensity in the cavity, heating the cavity to 900 ℃, adjusting the pressure intensity in the cavity through the flow of the transport gas to enable the pressure intensity in the cavity to be in a low-pressure state, and introducing an oxygen source to grow a film; s2, maintaining the temperature, the pressure intensity in the cavity, the flow of the transport gas and the oxygen source during the growth of the S1, and carrying out in-situ post-annealing treatment; and S3, closing the oxygen and the heat source, adjusting the pressure in the cavity, naturally cooling to room temperature in the atmosphere of transport gas, and obtaining the gallium oxide epitaxial film on the substrate. The lanthanum source is metal lanthanum, the transport gas is nitrogen, and the oxygen source is oxygen; before heating, the pressure in the transport gas adjusting cavity is adjusted to 400Torr, the gas flow of the transport gas is 7000sccm, after heating, the pressure in the transport gas adjusting cavity is adjusted to 5Torr, and the gas flow of the transport gas is 50sccm; the flow rate of oxygen gas was 50sccm.
(3) Preparing a low dielectric loss silicon carbide fiber reinforced ceramic composite material: siC @ SiO of the lanthanum oxide film deposited on the surface prepared in the step (2) 2 The core-shell structure, the boron compound, the silicon nitride and the silicon dioxide are evenly mixed and put into a dry pressing mould, prepressing for 2min under 5MPa to obtain a blank, placing the blank in a crucible, vacuumizing, heating, vacuum sintering and cooling to obtain the product;
the dosage of the raw materials is as follows: siC @ SiO with lanthanum oxide film deposited on surface 2 100 parts of a core-shell structure, 3.5 parts of a boron compound, 1.5 parts of silicon nitride and 1.5 parts of silicon dioxide in parts by weight; the boron compound is boron nitride or boron carbide; the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, sintering temperature is 2100 ℃; the sintering time is 18h; temperature rising conditions are as follows: when the temperature is increased from the room temperature to 1750 ℃, the heating rate is 55 ℃/min, and when the temperature is increased from 1750 ℃ to 2100 ℃, the heating rate is 15 ℃/min; cooling conditions are as follows: the cooling rate is 15 ℃/min from 2100 ℃ to 1750 ℃, and the cooling rate is 55 ℃/min from 1750 ℃ to room temperature.
Example 2
The preparation method of the low dielectric loss silicon carbide fiber reinforced ceramic composite material comprises the following steps:
(1)SiC@SiO 2 preparing a core-shell structure: placing the silicon carbide fiber in a high-frequency induction furnace, carrying out thermal oxidation treatment in the air atmosphere, and cooling along with the furnace to obtain SiC @ SiO 2 A core-shell structure; the thermal oxidation treatment conditions are as follows: performing thermal oxidation treatment at 1400 ℃ for 2min.
(2) SiC @ SiO with lanthanum oxide film deposited on surface 2 Preparing a core-shell structure: by chemical vapour deposition on SiC @ SiO 2 Depositing a lanthanum oxide film on the surface of the core-shell structure;
the chemical vapor deposition step comprises: s1, lanthanum source and SiC @ SiO 2 Respectively placing the core-shell structures into a cavity of a tubular furnace, vacuumizing the cavity, introducing transport gas to adjust the pressure intensity in the cavity, heating the cavity to 800 ℃, adjusting the pressure intensity in the cavity through the flow of the transport gas to enable the pressure intensity in the cavity to be in a low-pressure state, and introducing an oxygen source to grow a film; s2, maintaining the temperature, the pressure in the cavity, the flow of the transport gas and the oxygen source during the growth of the S1, and in-situ post-annealingC, processing; and S3, closing the oxygen and the heat source, adjusting the pressure in the cavity, naturally cooling to room temperature in the atmosphere of transport gas, and obtaining the gallium oxide epitaxial film on the substrate. The lanthanum source is metal lanthanum, the transport gas is argon, and the oxygen source is oxygen; before heating, the pressure in the cavity is adjusted to be 100Torr by the transport gas, the gas flow of the transport gas is 400sccm, after heating, the pressure in the cavity is adjusted to be 0.1Torr by the transport gas, and the gas flow of the transport gas is 10sccm; the flow rate of oxygen was 10sccm.
(3) Preparing a low dielectric loss silicon carbide fiber reinforced ceramic composite material: siC @ SiO of the lanthanum oxide film deposited on the surface prepared in the step (2) 2 Uniformly mixing the core-shell structure, the boron compound, silicon nitride and silicon dioxide, putting the mixture into a dry pressing mould, prepressing the mixture for 3min at 4MPa to obtain a blank, putting the blank into a crucible, vacuumizing, heating, sintering in vacuum, and cooling to obtain the product;
the dosage of the raw materials is as follows: siC @ SiO of surface deposited lanthanum oxide film 2 100 parts of a core-shell structure, 3 parts of a boron compound, 2 parts of silicon nitride and 3 parts of silicon dioxide, wherein the parts by weight are calculated; the boron compound is boron nitride or boron carbide; the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, and sintering temperature of 2000 deg.C; the sintering time is 10-24h; temperature rise conditions: when the temperature is increased from room temperature to 1650 ℃, the heating rate is 50 ℃/min, and when the temperature is increased from 1650 ℃ to 2000 ℃, the heating rate is 10 ℃/min; cooling conditions are as follows: the cooling rate is 10 ℃/min from 2000 ℃ to 1650 ℃, and the cooling rate is 50 ℃/min from 1650 ℃ to room temperature.
Example 3
The preparation method of the low dielectric loss silicon carbide fiber reinforced ceramic composite material comprises the following steps:
(1)SiC@SiO 2 preparing a core-shell structure: placing the silicon carbide fiber in a high-frequency induction furnace, carrying out thermal oxidation treatment in the air atmosphere, and cooling along with the furnace to obtain SiC @ SiO 2 A core-shell structure; the thermal oxidation treatment conditions were: thermal oxidation treatment at 1500 deg.C for 1min.
(2) SiC @ SiO of surface deposited lanthanum oxide film 2 Preparing a core-shell structure: by chemical vapour deposition on SiC @ SiO 2 Surface deposition oxidation of core-shell structureA lanthanum film;
the chemical vapor deposition steps are as follows: s1, lanthanum source and SiC @ SiO 2 Respectively placing the core-shell structures into a cavity of a tubular furnace, vacuumizing the cavity, introducing transport gas to adjust the pressure intensity in the cavity, heating the cavity to 1100 ℃, adjusting the pressure intensity in the cavity through the flow of the transport gas to enable the pressure intensity in the cavity to be in a low-pressure state, and introducing an oxygen source to grow a film; s2, maintaining the temperature, the pressure in the cavity, the flow of the transport gas and the oxygen source during the growth of the S1, and carrying out in-situ post-annealing treatment; and S3, closing the oxygen and the heat source, adjusting the pressure in the cavity, naturally cooling to room temperature in the atmosphere of the transport gas, and obtaining the gallium oxide epitaxial film on the substrate. The lanthanum source is metal lanthanum, the transport gas is nitrogen, and the oxygen source is oxygen; before heating, the pressure in the cavity is adjusted to 760Torr by the transport gas, the gas flow of the transport gas is 1000sccm, after heating, the pressure in the cavity is adjusted to 10Torr by the transport gas, and the gas flow of the transport gas is 100sccm; the flow rate of oxygen was 100sccm.
(3) Preparing a low dielectric loss silicon carbide fiber reinforced ceramic composite material: siC @ SiO of the lanthanum oxide film deposited on the surface prepared in the step (2) 2 The core-shell structure, the boron compound, the silicon nitride and the silicon dioxide are evenly mixed and put into a dry pressing mould, prepressing at 6MPa for 0.5min to obtain a blank, placing the blank in a crucible, vacuumizing, heating, vacuum sintering and cooling to obtain the product;
the dosage of the raw materials is as follows: siC @ SiO of surface deposited lanthanum oxide film 2 100 parts of a core-shell structure, 4 parts of a boron compound, 1 part of silicon nitride and 1 part of silicon dioxide in parts by weight; the boron compound is boron nitride or boron carbide; the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, sintering temperature 2200 ℃; the sintering time is 10-24h; temperature rising conditions are as follows: when the temperature is increased from room temperature to 1850 ℃, the heating rate is 60 ℃/min, and when the temperature is increased from 1850 ℃ to 2200 ℃, the heating rate is 20 ℃/min; cooling conditions are as follows: the cooling rate is 20 ℃/min from 2200 ℃ to 1850 ℃, and the cooling rate is 60 ℃/min from 1850 ℃ to room temperature.
Comparative example
The preparation method of the silicon carbide fiber reinforced ceramic composite material comprises the following steps: uniformly mixing silicon carbide fiber, boron compound, silicon nitride and silicon dioxide, putting into a dry pressing mould, prepressing for 2min at 5MPa to obtain a blank body, putting the blank body into a crucible, vacuumizing, heating, sintering in vacuum, and cooling to obtain the silicon carbide fiber/boron compound/silicon nitride/silicon dioxide composite material;
wherein, the raw material dosage is as follows: 100 parts of silicon carbide fiber, 3.5 parts of boron compound, 1.5 parts of silicon nitride and 2 parts of silicon dioxide in parts by weight; the boron compound is boron nitride or boron carbide; temperature rising conditions are as follows: when the temperature is increased from the room temperature to 1750 ℃, the heating rate is 55 ℃/min, and when the temperature is increased from 1750 ℃ to 2100 ℃, the heating rate is 15 ℃/min; the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, sintering temperature 2100 deg.C; the sintering time is 18h; cooling conditions are as follows: the cooling rate is 15 ℃/min from 2100 ℃ to 1750 ℃, and the cooling rate is 55 ℃/min from 1750 ℃ to room temperature.
Examples of the experiments
The product properties of examples 1to 3 and comparative example 1 were tested. The results were as follows:
Figure BDA0003331343590000061
Figure BDA0003331343590000071
note:
the dielectric property test method comprises the following steps: the dielectric property of the composite material is tested by adopting a rectangular waveguide method, the essence of the method is to test the reflection coefficient and the transmission coefficient of the ports at two sides, and the dielectric constant of the composite material is calculated by a transmission/reflection method model. Agilent N5230C vector network analyzer was used for the test. The actual test band is the X band (8.2-12.4 GHz), corresponding to a sample size of 22.86mm by 10.16mm by 2mm.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent should be subject to the appended claims.

Claims (2)

1. A preparation method of a low dielectric loss silicon carbide fiber reinforced ceramic composite material is characterized by comprising the following steps: the method comprises the following steps:
（1）SiC@SiO 2 preparing a core-shell structure: placing the silicon carbide fiber in a high-frequency induction furnace, carrying out thermal oxidation treatment in the air atmosphere, and cooling along with the furnace to obtain SiC @ SiO 2 A core-shell structure;
(2) SiC @ SiO with lanthanum oxide film deposited on surface 2 Preparing a core-shell structure: by chemical vapour deposition on SiC @ SiO 2 Depositing a lanthanum oxide film on the surface of the core-shell structure;
(3) Preparing a low dielectric loss silicon carbide fiber reinforced ceramic composite material: siC @ SiO of the lanthanum oxide film deposited on the surface prepared in the step (2) 2 Uniformly mixing the core-shell structure, the boron compound, silicon nitride and silicon dioxide, putting the mixture into a dry pressing mould, prepressing the mixture for 0.5 to 3min at 4 to 6MPa to obtain a blank, putting the blank into a crucible, vacuumizing, heating, sintering in vacuum, and cooling to obtain the product;
wherein, in the step (1), the thermal oxidation treatment conditions are as follows: performing thermal oxidation treatment at 1400-1500 deg.C for 1-2min;
wherein, in the step (2), the chemical vapor deposition step is as follows: s1, lanthanum source and SiC @ SiO 2 Respectively placing the core-shell structures into a cavity of a tubular furnace, vacuumizing the cavity, introducing transport gas to adjust the pressure intensity in the cavity, heating the cavity to 800-1100 ℃, adjusting the pressure intensity in the cavity through the flow of the transport gas to enable the pressure intensity in the cavity to be in a low-pressure state, and introducing an oxygen source to grow a film; s2, maintaining the temperature, the pressure in the cavity, the flow of the transport gas and the oxygen source during the growth of the S1, and carrying out in-situ post-annealing treatment; s3, closing oxygen and a heat source, adjusting the pressure in the cavity, naturally cooling to room temperature under the atmosphere of transport gas, and obtaining a lanthanum oxide epitaxial film on the substrate;
the lanthanum source is metal lanthanum, the transport gas is nitrogen or argon, and the oxygen source is oxygen; before heating, the pressure in the transport gas adjusting cavity is adjusted to be 100-760Torr, the gas flow of the transport gas is 400-1000sccm, after heating, the pressure in the transport gas adjusting cavity is adjusted to be 0.1-10Torr, and the gas flow of the transport gas is 10-100sccm; the flow rate of oxygen is 10-100sccm;
wherein in the step (3), the use amount of the raw materials is as follows: siC @ SiO of surface deposited lanthanum oxide film 2 100 parts of a core-shell structure, 3-4 parts of a boron compound, 1-2 parts of silicon nitride and 1-3 parts of silicon dioxide in parts by weight; the boron compound is boron nitride or boron carbide; the vacuum sintering conditions are as follows: vacuum degree below 0.01Pa, sintering temperature 2000-2200 deg.C; the sintering time is 10-24h;
in the step (3), the temperature rise condition is as follows: when the temperature is increased from room temperature to 1650-1850 ℃, the heating rate is 50-60 ℃/min, and when the temperature is increased from 1650-1850 ℃ to 2000-2200 ℃, the heating rate is 10-20 ℃/min; cooling conditions are as follows: the cooling rate is 10-20 ℃/min from 2000-2200 ℃ to 1650-1850 ℃, and the cooling rate is 50-60 ℃/min from 1650-1850 ℃ to room temperature.
2. A low dielectric loss silicon carbide fiber reinforced ceramic composite made by the method of claim 1.
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