CN113889833A - Hybrid pump laser - Google Patents
Hybrid pump laser Download PDFInfo
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- CN113889833A CN113889833A CN202110941040.6A CN202110941040A CN113889833A CN 113889833 A CN113889833 A CN 113889833A CN 202110941040 A CN202110941040 A CN 202110941040A CN 113889833 A CN113889833 A CN 113889833A
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- 239000013078 crystal Substances 0.000 claims abstract description 144
- 238000005086 pumping Methods 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 239000013307 optical fiber Substances 0.000 claims description 16
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 238000003491 array Methods 0.000 claims description 11
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000000835 fiber Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
Abstract
The invention discloses a hybrid pump laser, which comprises a laser crystal, an end face pump structure, a side face pump structure and a resonant cavity structure, wherein the laser crystal is used as a gain medium, the end face pump structure is arranged at one end of the laser crystal and used for pumping from the end face of the laser crystal, the side face pump structure is arranged at the side face of the laser crystal and used for pumping from the side face of the laser crystal, and the resonant cavity structure is arranged at two ends of the laser crystal and used for generating resonant laser.
Description
Technical Field
The application relates to the field of solid lasers, in particular to a semiconductor pump laser.
Background
A semiconductor pump laser is a new laser using semiconductor solid laser material as working substance. The semiconductor pumping solid laser has fast development and wide application, is one new kind of second generation solid laser with high efficiency, long service life, high light beam quality, high stability, compact structure and other advantages, and has unique application foreground in space communication, optical fiber communication, atmosphere research, environment science, medical equipment, optical image processing, laser printer and other high technology fields.
The pumping coupling mode of the semiconductor pumping laser can be divided into a side pumping mode and an end pumping mode, wherein the side pumping mode refers to that pumping light pumps a laser crystal from the side, and is different from end pumping in an overlapping mode of the pumping light and laser beams; the end pumping mode means that pumping light directly irradiates the rear end face of a working substance, so that the working substance is excited to emit photons to generate laser.
In the side pumping mode, the pump light absorbed by the laser crystal is generally weaker at the edge and stronger at the center, namely, an edge low-gain area exists on the laser crystal, which affects the beam quality of the laser; meanwhile, because the laser crystal has a damage threshold value, the optical property of the laser crystal changes along with the temperature change, and in an end-face pumping mode, the laser crystal absorbs pumping light to generate obvious thermal effect, the power of end-face pumping cannot be too high, and the output power of the end-face pumping laser is limited.
Disclosure of Invention
Objects of the invention
The invention aims to provide a hybrid pump laser, which adopts an end-face hybrid pumping mode to solve the problems of high power expansion of the end-face pump laser and laser beam quality of the side-face pump laser.
(II) technical scheme
To solve the above problems, the present invention provides a hybrid pump laser, including:
a laser crystal functioning as a gain medium;
the end face pumping structure is arranged at one end of the laser crystal and is used for pumping the laser crystal from the end face;
the side pumping structure is arranged on the side face of the laser crystal and is used for pumping the laser crystal from the side face;
and the resonant cavity structures are arranged at two ends of the laser crystal and are used for generating resonant laser.
Optionally, the laser crystal includes a doped crystal and an undoped crystal, and the undoped crystal is bonded to one end of the doped crystal close to the end-pumped structure.
Optionally, the laser crystal is a composite crystal bonded with an undoped crystal, and the doped crystal is a neodymium-doped yttrium aluminum garnet crystal or a neodymium-doped yttrium vanadate crystal.
Optionally, two end sides of the laser crystal are provided with a double-transmission film for pumping light and laser.
Optionally, the end-pumped structure comprises:
the optical fiber output semiconductor pump source is arranged at one end of the laser crystal and used for generating pump light;
and the end face pump coupling mirror is arranged between the optical fiber output semiconductor pump source and the laser crystal and is used for improving the coupling efficiency of pump light.
Optionally, the side pumping structure comprises:
the laser diode heat sinks are arranged around the laser crystal;
and the laser diode single-wire linear arrays correspond to the laser diode heat sinks one to one, are fixed on the laser diode heat sinks and are used for generating pumping light.
Optionally, the pump light generated by the optical fiber output semiconductor pump source is ring pump light, and the ring pump light is matched with the edge low-gain region of the laser crystal.
Optionally, the resonant cavity structure includes:
the total reflection mirror is arranged on one side of the laser crystal close to the end face pumping structure;
and the output mirror is arranged on one side of the laser crystal, which is far away from the total reflection mirror.
Optionally, a quartz glass tube is sleeved outside the laser crystal, a refrigeration channel is formed between the quartz glass tube and the peripheral side face of the laser crystal, and water flows through the quartz glass tube to cool the laser crystal.
Optionally, two side surfaces of the total reflection mirror are provided with antireflection films for pump light; and a high-reflection film for resonant laser is arranged on one side surface of the total reflector.
(III) advantageous effects
The technical scheme of the invention has the following beneficial technical effects:
in the side pumping mode, the pump light absorbed by the laser crystal is usually weaker at the edge and stronger at the center, and the end pumping structure can supplement and gain in the edge low-gain region of the laser crystal, so that not only is uniform pump light distribution obtained on the longitudinal section of the laser crystal, but also the temperature difference between the peripheral side surface of the laser crystal and the axis of the laser crystal can be reduced, and the problem of poor quality of laser beams obtained by the side pumping mode is solved; meanwhile, the lateral pumping mode is used for transversely pumping the crystal through the side face of the crystal, and the laser crystal can provide a larger heat dissipation area, so that the pumping strength of the lateral pumping structure can be very high, and the effect of the end face pumping structure is added, so that larger output power can be easily obtained, and the problem of high power expansion existing in the end face pumping mode is solved.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention;
fig. 2 is a schematic diagram further illustrating a side-pumped structure and a laser crystal according to an embodiment of the present invention.
Reference numerals:
1. a laser crystal; 11. doping the crystal; 12. undoped crystals; 2. an end-pumped configuration; 21. an optical fiber output semiconductor pump source; 22. an end-pumped coupling mirror; 3. a side pumping structure; 31. a laser diode heat sink; 32. laser diode single-wire linear array; 41. a total reflection mirror; 42. an output mirror; 5. a quartz glass tube.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The invention is described in detail below with reference to the following figures and examples:
referring to fig. 1, in some embodiments, the present invention provides a hybrid pump laser, which includes a laser crystal 1, an end-pumped structure 2, a side-pumped structure 3, and a resonant cavity structure, wherein the laser crystal 1 serves as a gain medium, the end-pumped structure 2 is disposed at one end side of the laser crystal 1 and is used for pumping from the end surface of the laser crystal 1, the side-pumped structure 3 is disposed at the periphery side of the laser crystal 1 and is used for pumping from the side surface of the laser crystal 1, and the resonant cavity structure is disposed at two ends of the laser crystal 1 and is used for generating resonant laser light.
Specifically, the laser crystal 1 includes a doped crystal 11 and an undoped crystal 12, the undoped crystal 12 is bonded to one end of the doped crystal 11 close to the end-pumped structure 2 to enhance heat dissipation and reduce the thermal effect of the end-pumped structure, optionally, the doped crystal 11 is a neodymium-doped yttrium aluminum garnet crystal or a neodymium-doped yttrium vanadate crystal, and since the neodymium-doped yttrium aluminum garnet crystal has the advantages of high gain, low threshold, high efficiency, low loss and high thermal conductivity, in the exemplary embodiment, the laser crystal 1 is preferably a neodymium-doped yttrium aluminum garnet crystal.
Further:
the whole laser crystal 1 is arranged to be in a round bar shape, and the side surface of the laser crystal 1 is roughened so as to further enhance the uniform absorption of pump light;
the two ends of the laser crystal 1 are fixed with double transmission films for pumping light and laser, so as to reduce the loss of the pumping light and the laser and further improve the output power of the laser.
Specifically, the end-pumped configuration 2 includes:
an optical fiber output semiconductor pump source 21 provided at one end of the laser crystal 1 for generating pump light;
and the end-face pumping coupling mirror 22 is arranged between the optical fiber output semiconductor pumping source 21 and the laser crystal 1 and is used for improving the coupling efficiency of the pumping light, and the pumping light generated by the optical fiber output semiconductor pumping source 21 is coupled into the laser crystal 1 through the end-face pumping coupling mirror 22.
In particular, with reference to fig. 2, the side pumping structure 3 comprises:
a plurality of laser diode heat sinks 31 which are arranged around the laser crystal 1 and used for enhancing heat dissipation;
and the laser diode single-wire arrays 32 correspond to the laser diode heat sinks 31 one by one, are fixed on the laser diode heat sinks 31 and are used for generating pump light, and heat generated by the laser diode single-wire arrays 32 is quickly dissipated through the laser diode heat sinks 31.
Furthermore, the pump light generated by the optical fiber output semiconductor pump source 21 is annular pump light, and the annular pump light is matched with the edge low-gain region of the laser crystal 1, so that the pump light absorbed on the longitudinal section of the laser crystal 1 is more uniform, the temperature difference between the peripheral side surface of the laser crystal 1 and the axis of the laser crystal 1 is reduced, and the laser beam quality is improved.
Specifically, referring to fig. 1, the resonant cavity structure includes:
a total reflection mirror 41, which is disposed on one side of the laser crystal 1 close to the end-pumped structure 2 in the exemplary embodiment, and is disposed perpendicular to the laser light path;
and the output mirror 42 is arranged on one side of the laser crystal 1, which is far away from the total reflection mirror 41, and is arranged perpendicular to the laser light path.
Optionally, the total reflection mirror 41 may be further disposed at an end of the laser crystal 1 close to the end-pumped structure 2 in a film-coating manner, so as to reduce cost.
Further, in the exemplary embodiment, two side surfaces of the total reflection mirror 41 are both provided with an antireflection film for the pump light, so as to reduce the loss of the pump light; a highly reflective film for the resonant laser light is provided on one side surface of the total reflection mirror 41 to enhance the reflection action of the total reflection mirror 41 for the resonant laser light. Optionally, the laser crystal 1 is sleeved with a quartz glass tube 5, a refrigerating channel is formed between the quartz glass tube 5 and the side surface of the laser crystal 1, water flows are communicated in the quartz glass tube 5 to cool the laser crystal 1, and therefore the heat effect generated by the laser crystal 1 is neutralized.
Compared with the prior art, the invention adopts a mixed pumping mode of end pumping and side pumping, on one hand, the end pumping structure 2 can supplement and gain in a low-gain region of the side pumping (namely, the edge region of the laser crystal 1), so that the pump light absorbed on the longitudinal section of the laser crystal 1 is more uniform, the temperature difference between the peripheral side surface of the laser crystal 1 and the axis of the laser crystal can be reduced, and the quality of the laser beam is improved; on the other hand, when the laser crystal 1 is side pumped, the laser crystal 1 can provide a larger heat dissipation area, so that the pumping strength of the side pumping structure 3 can be very high, and in addition, the end pumping structure 2 can easily obtain larger output power, thereby improving the problem of high power expansion existing in the end pumping mode.
An exemplary embodiment:
referring to fig. 1 and 2, in the present embodiment, a hybrid pump laser includes a laser crystal 1, an end-pumping structure 2, a side-pumping structure 3, a resonant cavity structure and a quartz glass tube 5, the end-pumping structure 2 is disposed at one end of the laser crystal 1, the side-pumping structure 3 is disposed at a side of the laser crystal 1, the resonant cavity structure is disposed at two ends of the laser crystal 1, and the quartz glass tube 5 is sleeved on the laser crystal 1.
The laser crystal 1 comprises a section of neodymium-doped yttrium aluminum garnet crystal and a section of undoped garnet crystal, the undoped crystal 12 is arranged at one end of the doped crystal 11 close to the end-face pumping structure 2 in a bonding mode, the laser crystal 1 is in a round rod shape, the side face of the laser crystal is roughened, and a 808nm pump light high-transmission film and a 1064nm resonant laser high-transmission film are plated on two end faces of the laser crystal.
The end-pumped structure 2 comprises an optical fiber output semiconductor pump source 21 and an end-pumped coupling mirror 22, the optical fiber output semiconductor pump source 21 is arranged at one end of the laser crystal 1, the end-pumped coupling mirror 22 is arranged between the optical fiber output semiconductor pump source 21 and the laser crystal 1, and pump light generated by the optical fiber output semiconductor pump source 21 is coupled into the laser crystal 1 through the end-pumped coupling mirror 22. The pump light output by the optical fiber output semiconductor pump source 21 is 808nm ring pump light, and the ring pump light is matched with the edge low-gain region of the laser crystal 1.
The side pumping structure 3 comprises three laser diode heat sinks 31 and three laser diode single-line arrays 32, the laser diode single-line arrays 32 are in one-to-one correspondence with the laser diode heat sinks 31, the laser diode single-line arrays 32 are fixed on the laser diode heat sinks 31, the laser diode array direction of the laser diode single-line arrays 32 is parallel to the axis direction of the laser crystal 1, and the three laser diode single-line arrays 32 are distributed in a circumferential array mode around the laser crystal 1 by taking the axis of the laser crystal 1 as the center.
The resonant cavity structure comprises a total reflection mirror 41 and an output mirror 42, wherein the total reflection mirror 41 is arranged on one side of the laser crystal 1 close to the end face pumping structure 2, the output mirror 42 is arranged on one side of the laser crystal 1 away from the total reflection mirror 41, two side faces of the total reflection mirror 41 are respectively plated with an antireflection film for pump light of 808nm, and one side face of the total reflection mirror 41 is also plated with a high reflection film for resonant laser of 1064 nm.
The quartz glass tube 5 is sleeved outside the laser crystal 1, a refrigeration channel is formed between the quartz glass tube 5 and the peripheral side face of the laser crystal 1, water flows are communicated in the quartz glass tube 5 to cool the laser crystal 1, wherein three antireflection films for pump light with the wavelength of 808nm are plated on the surface of the quartz glass tube 5, the three antireflection films correspond to the three laser diode single-wire linear arrays 32 one by one, a high-reflection film for the pump light with the wavelength of 808nm is plated on the rest part of the surface of the quartz glass tube 5, and after the pump light output by the laser diode single-wire linear arrays 32 passes through the antireflection films on the quartz glass tube 5, the pump light is continuously reflected in the quartz glass tube 5 due to the existence of the high-reflection film until the pump light is fully absorbed by the laser crystal 1.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (10)
1. A hybrid pump laser, comprising:
a laser crystal (1) functioning as a gain medium;
an end-pumped structure (2) arranged at one end of the laser crystal (1) for end-pumping the laser crystal (1);
a side-pumping structure (3) arranged at a side of the laser crystal (1) for side-pumping the laser crystal (1);
and the resonant cavity structures are arranged at two ends of the laser crystal (1) and are used for generating resonant laser.
2. The hybrid pump laser according to claim 1, wherein the laser crystal (1) comprises a length of doped crystal (11) and a length of undoped crystal (12), the undoped crystal (12) being bonded to an end of the doped crystal (11) adjacent to the end-pumped structure (2).
3. The hybrid pump laser according to claim 2, wherein the doped crystal (11) is a neodymium-doped yttrium aluminum garnet crystal or a neodymium-doped yttrium vanadate crystal.
4. The hybrid pump laser according to claim 2, wherein both ends of the laser crystal (1) are provided with a double transparency film for pump light and laser light.
5. The hybrid pump laser according to claim 1, wherein the end-pumped structure (2) comprises:
the optical fiber output semiconductor pump source (21) is arranged at one end of the laser crystal (1) and is used for generating pump light;
and the end face pump coupling mirror (22) is arranged between the optical fiber output semiconductor pump source (21) and the laser crystal (1) and is used for improving the coupling efficiency of pump light.
6. The hybrid pump laser according to claim 1, wherein the side-pumped structure (3) comprises:
a plurality of laser diode heat sinks (31) which are arranged around the periphery of the laser crystal (1);
and the laser diode single-wire arrays (32) correspond to the laser diode heat sinks (31) one by one, are fixed on the laser diode heat sinks (31), and are used for generating pump light.
7. The hybrid pump laser of claim 5, wherein the pump light generated by the fiber output semiconductor pump source (21) is a ring pump light that matches an edge low gain region of the laser crystal (1).
8. The hybrid pump laser of claim 1, wherein the resonant cavity structure comprises:
the total reflection mirror (41) is arranged on one side, close to the end face pumping structure (2), of the laser crystal (1);
and the output mirror (42) is arranged on one side of the laser crystal (1) departing from the total reflection mirror (41).
9. The hybrid pump laser as claimed in claim 2, wherein the laser crystal (1) is sheathed with a quartz glass tube (5), a cooling channel is formed between the quartz glass tube (5) and the peripheral side surface of the laser crystal (1), and water flows through the quartz glass tube (5) to cool the laser crystal (1).
10. The hybrid pump laser according to claim 8, wherein both side surfaces of the total reflection mirror (41) are provided with an antireflection film for pump light; and a high-reflection film for resonant laser is arranged on one side surface of the total reflection mirror (41).
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CN202110941040.6A CN113889833A (en) | 2021-08-17 | 2021-08-17 | Hybrid pump laser |
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CN202110941040.6A CN113889833A (en) | 2021-08-17 | 2021-08-17 | Hybrid pump laser |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4794615A (en) * | 1987-06-12 | 1988-12-27 | Spectra Diode Laboratories, Inc. | End and side pumped laser |
CN101202412A (en) * | 2007-11-30 | 2008-06-18 | 深圳大学 | Solid laser |
CN102856785A (en) * | 2012-09-06 | 2013-01-02 | 中国电子科技集团公司第十一研究所 | End face and side face composite pumping device and laser |
-
2021
- 2021-08-17 CN CN202110941040.6A patent/CN113889833A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4794615A (en) * | 1987-06-12 | 1988-12-27 | Spectra Diode Laboratories, Inc. | End and side pumped laser |
CN101202412A (en) * | 2007-11-30 | 2008-06-18 | 深圳大学 | Solid laser |
CN102856785A (en) * | 2012-09-06 | 2013-01-02 | 中国电子科技集团公司第十一研究所 | End face and side face composite pumping device and laser |
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Application publication date: 20220104 |