CN113889567A - Multi-configuration Hall balance material with topological magnetism and preparation method thereof - Google Patents
Multi-configuration Hall balance material with topological magnetism and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a multi-configuration Hall balance material with topological magnetism and a preparation method thereof, wherein the multi-configuration Hall balance material sequentially comprises a functional nonmagnetic layer for providing self-spin current, at least two magnetic layers and a functional insulating layer; an isolation layer is arranged between the two adjacent magnetic layers, the two adjacent magnetic layers are used for providing magnetic moments in different controllable directions, the isolation layer is used for adjusting the relative directions of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment directions of the magnetic layers; and (3) introducing 10-60 mA pulse current to the functional nonmagnetic layer, and forming a pair of magnetic Sgeminmates with opposite polarity directions by the multi-configuration Hall balance material. The invention can eliminate the SgimenHall effect under current driving.
Description
Technical Field
The invention belongs to the field of magnetic storage information, and particularly relates to a multi-configuration Hall balance material with topological magnetism and a preparation method thereof.
Background
Information industry has rapidly developed informationStorage and processing capacity (e.g. storage density)>Tbit/in2Storage speed>Gbit/s) put high demands. Along with the information technology revolution, which is changing the human society, 5G communication, global positioning, and artificial intelligence are tightly linking together smart life, national defense security, and human civilization progress. Meanwhile, in the rapid development with the application demand as the leader, the storage density, the power consumption and other key performances of the information magnetic storage material and the device are further improved and limited by materials and physical principles. How to solve the problems faced by the current information magnetic storage materials, researchers focus on the exploration of new material structure design and basic physical problems again. The topological properties of materials are regulated by utilizing the non-mediocre geometric phase of electrons, the newly discovered Magnetic materials with topological protection properties are collectively called topological Magnetic materials, and the related Magnetic properties are called topological magnetism and mainly comprise Magnetic Skyrmion (Skyromion), Magnetic Vortex (Vortex), Magnetic floater (Magnetic floater), wheat threading (Meron) and the like.
The magnetic skullet is a non-collinear chiral spin structure with topological protection, and the critical current density of the driving magnetic skullet is only 102A/cm2The current density required by the movement of the magnetic domain is 5 to 6 orders of magnitude lower than that of the traditional magnetic domain, and is far lower than the upper limit value (10) of the channel current density in the silicon-based semiconductor technology5A/cm2) The method has wide application prospect in future information magnetic storage technology.
At present, topological magnetic structures such as magnetic skybutton and the like are found in various magnetic materials, and the generation and annihilation of the magnetic skybutton under the action of an external field are preliminarily realized. For example, CN110137343A discloses a method for generating and erasing magnetic segmentins by using an electric field, in which a magnetic segmentin material is grown on a ferroelectric material substrate, and after the electric field is locally applied, the ferroelectric material is strained, thereby affecting the anisotropic property of the magnetic material, so that the monodomain state in the region under the electrode is changed from a metastable state to an unstable state, thereby generating the magnetic segmentins. The magnetic Sgemini is generated by using an electric field, and is characterized by low power consumption and small heat productivity of a device.
However, the magnetic segmentins discovered at present all have particle-like characteristics, and under the action of an applied current, the segmentins generate extra transverse velocity to deflect, so that the segmentins are annihilated, and the transport property has the characteristic of hall effect, which is very unfavorable for the practical application of the magnetic segmentins in information magnetic storage.
The search and discovery of a novel topological magnetic material system for eliminating the Skeleton Hall effect become a technical problem to be solved urgently.
Disclosure of Invention
In view of the above-mentioned drawbacks in the prior art, the present invention provides a multi-configuration hall balance material with topological magnetism, which can eliminate the sgrming hall effect under current driving.
In a first aspect, the invention provides a multi-configuration Hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer for providing spin current, at least two magnetic layers and a functional insulating layer;
an isolation layer is arranged between the two adjacent magnetic layers, the two adjacent magnetic layers are used for providing magnetic moments in different controllable directions, the isolation layer is used for adjusting the relative directions of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment directions of the magnetic layers;
and (3) introducing 10-60 mA pulse current to the functional nonmagnetic layer, and forming a pair of magnetic Sgeminmates with opposite polarity directions by the multi-configuration Hall balance material.
The multi-configuration Hall balance material can realize inconsistent overturning of magnetic moments in at least two magnetic layers, forms three states of a forward parallel state, an anti-parallel state and an anti-parallel state, and corresponds to information magnetic storage multi-configuration of a high resistance state, a middle state and a low resistance state. On the basis, the spin currents with different intensities are formed by using the pulse currents (10 mA-60 mA) with controllable intensities, so that the topological magnetism of the multi-configuration Hall balance material can be realized, wherein the magnetic Skeleton pairs with opposite polarity directions can eliminate the Skeleton Hall effect under the current driving.
The thickness of the functional nonmagnetic layer is unidirectionally changed in the in-plane direction, and the thickness difference in the in-plane direction is 0nm/mm-5 nm/mm. The functional nonmagnetic layer may be at least one of copper oxide, a simple substance of a metal, or an alloy.
Wherein the thickness of the functional nonmagnetic layer is 1.5nm-20nm, and the thickness difference in the in-plane direction is 0nm/mm-5 nm/mm.
The thickness of the functional insulating layer is 3nm-10nm, and the functional insulating layer is at least one of magnesium oxide, titanium oxide, silicon nitride and hafnium oxide.
The isolating layer is at least one of aluminum oxide, zinc oxide, magnesium oxide, nickel oxide and titanium oxide or a simple substance or an alloy of ruthenium, hafnium, tantalum, platinum, gold, ruthenium, iridium and palladium, and the thickness of the isolating layer is changed in a single direction in the in-plane direction. The isolating layer is at least one of aluminum oxide, zinc oxide, magnesium oxide, nickel oxide, titanium oxide or simple substance or alloy of metal.
Wherein the thickness of the isolation layer is 0.6 nm-10nm, and the thickness difference in the in-plane direction is 0 nm/mm-3.5 nm/mm.
When the thickness of the functional nonmagnetic layer, the functional insulating layer or the isolating layer exceeds the range, the situation that the functional nonmagnetic layer of the multi-configuration Hall balance material is introduced with pulse current and cannot form a pair of magnetic Sgemens with opposite polarity directions easily occurs; and a pair of magnetic skynergons with opposite polarity directions formed by the multi-configuration Hall balance material is easy to appear, and the situation that pulse current is needed to be introduced into the functional nonmagnetic layer is large is easy to occur.
The magnetic layer is a magnetic single layer or a magnetic multi-period layer, the magnetic single layer is at least one of simple substances or alloys of iron, cobalt and nickel, and the magnetic multi-period layer is a multi-layer structure formed by stacking at least one of simple substances or alloys of iron, cobalt and nickel and nonmagnetic metals in the thickness direction. Further, the meaning that the magnetic layer is a magnetic multi-period layer is expressed as follows: at least one layer of a layered structure formed of one of iron, cobalt, nickel or an alloy, and at least one layer of a layered structure formed of a non-magnetic metal are stacked in a thickness direction to form a magnetic multi-periodic layer.
Wherein the magnetic layer is thicker than the Nth layerhThe range of (A) is as follows:
wherein the thicknesshIn nm, and N is the number of layers of the magnetic layer from the vicinity of the functional nonmagnetic layer. For example, when the multi-configuration Hall balance material has two magnetic layers, the thickness of the first layer is in the range of 0.6+0.2 (1-1) nm to 6+2 (1-1) nm, and the thickness of the second layer is in the range of 0.6+0.2 (2-1) nm to 6+2 (2-1) nm; when the multi-configuration Hall balance material has three magnetic layers, the thickness of the first layer is 0.6+0.2 (1-1) nm-6 +2 (1-1) nm, the thickness of the second layer is 0.6+0.2 (2-1) nm-6 +2 (2-1) nm, and the thickness of the third layer is 0.8 nm-8 nm.
The magnetic layer at least comprises an alloy layer, and the concentrations of different elements of the alloy layer are changed along the normal direction in a unidirectional mode. The meaning of a unidirectional change along the normal direction is: the concentration of different elements of the alloy layer is gradually increased or decreased in the same direction perpendicular to the alloy layer, and due to the layered structure, the direction perpendicular to the layered structure including the vertical plane inner direction is upward and the vertical plane inner direction is downward. Further, the meaning represented by the unidirectional variation along the normal direction can also be expressed as: the concentrations of different elements of the alloy layer are gradually increased or decreased in the same thickness direction.
Concentration gradient of the element in the alloy layer of the Nth layercgThe range of (A) is as follows:
n is the number of the magnetic layers from the functional nonmagnetic layer, and the element concentration gradientcgIn%/nm, the element concentration may refer to the mass concentration of the element component.
In a second aspect, the present invention also provides a method for preparing the above multi-configuration hall balance material with topological magnetism, which comprises:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film;
s2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 250-400 ℃, and the time is 1-3 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 1-30 μm, and the length of the long strip is 50-200 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
Wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 0nm/mm-5 nm/mm.
S12, preparing a magnetic layer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic layer ranges from 0.6nm to 6 nm. When the magnetic layer has an alloy layer, the concentration of different elements varies unidirectionally in the normal direction of the magnetic layer, and the concentration gradient ranges from 1.5%/nm to 15%/nm.
S13, preparing an isolation layer by using a magnetron sputtering system/molecular beam epitaxy system in cooperation with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the isolation layer is 0.6nm to 10nm, the thickness of the isolation layer is changed in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept between 0nm/mm and 3.5 nm/mm.
S14, preparing a magnetic layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic layer ranges from 0.8nm to 8nm, when the magnetic layer is provided with an alloy layer, the concentration of different elements changes unidirectionally along the normal direction of the film, and the concentration gradient ranges from 2%/nm to 20%/nm.
S15, if the magnetic layers of the multi-configuration Hall balance material are larger than two layers, sequentially utilizing a magnetron sputtering system/molecular beam epitaxy system to match with a wedge-shaped baffle accessory with adjustable positions to prepare an isolation layer, and utilizing the magnetron sputtering system/molecular beam epitaxy system to prepare the magnetic layers until the number of the magnetic layers meets a preset requirement, wherein the thickness range of the magnetic layers in the third layer and the subsequent layer is 0.8-8 nm, when the magnetic layers in the third layer and the subsequent layer are provided with alloy layers, the concentrations of different elements are changed unidirectionally along the normal direction of the film, and the element concentration gradient range in the third layer and the subsequent alloy layers is 2%/nm-20%/nm.
S16, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer ranges from 3nm to 10 nm.
The multi-configuration Hall balance material obtained by the functional non-magnetic layer, the at least two magnetic layers, the isolating layer and the functional insulating layer can realize inconsistent overturning of magnetic moments in the at least two magnetic layers to form three states of a forward parallel state, an anti-parallel state and an anti-parallel state, and corresponds to information magnetic storage multi-configuration of a high-resistance state, a middle state and a low-resistance state. The multi-configuration Hall balance material has the characteristics, so that the self-spin currents with different strengths are formed by adopting the pulse currents with controllable strengths, the topological magnetism of the multi-configuration Hall balance material can be realized, and the aim of eliminating the Sgeminzem Hall effect is fulfilled.
Drawings
The above and other objects, features and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
FIG. 1 is a schematic diagram showing the structure of a multi-configuration Hall balance material according to an embodiment of the present invention;
FIG. 2 is a schematic diagram showing the structure of another multi-configuration Hall balance material according to an embodiment of the present invention;
FIG. 3 is a graph showing the variation of Hall voltage with external magnetic field for a multi-configuration Hall balance material according to an embodiment of the present invention;
fig. 4 is a schematic diagram showing the movement locus of a magnetic skullet under current drive in a multi-configuration hall balance material according to an embodiment of the present invention.
Description of reference numerals:
1-functional non-magnetic layer, 2-magnetic layer, 3-isolation layer, 4-functional insulating layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings, and it is apparent that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terminology used in the embodiments of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the examples of the present invention and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise, and "a plurality" typically includes at least two.
It is also noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in the article or device in which the element is included.
The present invention will be described in detail with reference to specific examples.
Referring to fig. 1 and fig. 2, an embodiment of the present invention provides a multi-configuration hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer 1 for providing spin current, at least two magnetic layers 2, and a functional insulating layer 4; the functional nonmagnetic layer 1 may be: a simple substance or an alloy of at least one of hafnium, tantalum, platinum, gold, ruthenium, iridium, palladium, or copper oxide; the magnetic layer 2 is a magnetic single layer or a magnetic multi-period layer, the magnetic single layer is at least one of simple substances or alloys of iron, cobalt and nickel, the magnetic multi-period layer is a multilayer structure formed by stacking at least one of simple substances or alloys of iron, cobalt and nickel and nonmagnetic metals in the thickness direction, the magnetic layer 2 at least comprises an alloy layer, and the concentrations of different elements of the alloy layer are changed in a unidirectional way along the normal direction; the functional insulating layer 4 may be: at least one of magnesium oxide, titanium oxide, silicon nitride, and hafnium oxide;
an isolation layer 3 is arranged between two adjacent magnetic layers 2, the isolation layer 3 and the two adjacent magnetic layers 2 are used for providing magnetic moments in different controllable directions, and a functional insulating layer 4 is used for assisting in adjusting the magnetic moment directions of the magnetic multi-period layers; the isolation layer 3 may be: at least one of simple substances or alloys of aluminum oxide, zinc oxide, magnesium oxide, nickel oxide, titanium oxide, ruthenium, hafnium, tantalum, platinum, gold, iridium and palladium;
the functional nonmagnetic layer 1 is introduced with 10mA-60mA pulse current, the pulse current excites the spin current in the functional nonmagnetic layer 1 to act on the magnetic layer 2, and the multi-configuration Hall balance material forms a pair of magnetic SgGemins with opposite polarity directions (as shown in FIG. 3 and FIG. 4).
The function of the functional nonmagnetic layer 1 of the embodiment of the present invention mainly includes: the film can be used as a seed layer to provide good adhesion for a subsequently grown film layer. And also as a spin current providing layer to provide the motive force for the subsequent formation, driving and annihilation of the topological domain structure in the magnetic layer 2.
The function of the isolating layer 3 mainly includes: isolating adjacent magnetic layers 2. And adjusts the relative directions of the magnetic moments of the adjacent magnetic layers 2.
The functions of the functional insulating layer 4 mainly include: protect the multi-component Hall balance material, prevent the internal material from oxidative deterioration, and provide a metal/oxide interface to assist in adjusting the magnetic moment direction of the magnetic layer 2.
The magnetic layer 2 mainly functions as: providing at least two directionally controllable, unequal-magnitude magnetic moments. And providing a thin film layer forming a topological magnetic structure.
The embodiment of the invention also provides a method for preparing the multi-configuration Hall balance material with topological magnetism, which comprises the following steps:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film; wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 0nm/mm-5 nm/mm.
S12, preparing a magnetic layer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic layer ranges from 0.6nm to 6 nm. When the magnetic layer has an alloy layer, the concentration of different elements varies unidirectionally in the normal direction of the magnetic layer, and the concentration gradient ranges from 1.5%/nm to 15%/nm.
S13, preparing an isolation layer by using a magnetron sputtering system/molecular beam epitaxy system in cooperation with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the isolation layer is 0.6nm to 10nm, the thickness of the isolation layer is changed in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept between 0nm/mm and 3.5 nm/mm.
S14, preparing a magnetic layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic layer ranges from 0.8nm to 8nm, when the magnetic layer is provided with an alloy layer, the concentration of different elements changes unidirectionally along the normal direction of the film, and the concentration gradient ranges from 2%/nm to 20%/nm.
S15, if the magnetic layers of the multi-configuration Hall balance material are larger than two layers, sequentially utilizing a magnetron sputtering system/molecular beam epitaxy system to match with a wedge-shaped baffle accessory with adjustable positions to prepare an isolation layer, and utilizing the magnetron sputtering system/molecular beam epitaxy system to prepare the magnetic layers until the number of the magnetic layers meets a preset requirement, wherein the thickness range of the magnetic layers in the third layer and the subsequent layer is 0.8-8 nm, when the magnetic layers in the third layer and the subsequent layer are provided with alloy layers, the concentrations of different elements are changed unidirectionally along the normal direction of the film, and the element concentration gradient range in the third layer and the subsequent alloy layers is 2%/nm-20%/nm.
S16, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer ranges from 3nm to 10 nm.
S2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 250-400 ℃, and the time is 1-3 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 1-30 μm, and the length of the long strip is 50-200 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
In the preparation process of the multi-configuration Hall balance material, when the functional non-magnetic layer, the isolation layer, the magnetic layer or the functional insulation layer is made of metal, S1 adopts a direct current sputtering process, and the sputtering power is controlled between 30W and 120W. When the material of the functional nonmagnetic layer, the isolation layer, the magnetic layer or the functional insulating layer is a compound, S1 adopts a radio frequency sputtering process, and the sputtering power is controlled between 90W and 200W.
According to the embodiment of the invention, through the preparation method, the inconsistent turning of the magnetic moments in the two magnetic layers can be realized, three states of a forward parallel state, an anti-parallel state and an anti-parallel state are formed, and the information magnetic storage multi-configuration corresponding to a high resistance state, a middle state and a low resistance state is formed. On the basis, the spin currents with different intensities are formed by using the pulse currents with controllable intensities, the topological magnetism of the multi-configuration Hall balance material is realized, and the magnetic Scutellaria Skeen pairs with opposite polarity directions can eliminate the Scutellaria Skeen Hall effect under the current driving (as shown in figures 3 and 4).
Example 1
The embodiment of the invention provides a multi-configuration Hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer for providing spin current, two magnetic layers and a functional insulating layer; the functional nonmagnetic layer may be hafnium; the two magnetic layers are respectively a magnetic single layer and a magnetic multi-period layer, the magnetic single layer is iron, the magnetic multi-period layer is a multi-layer structure formed by stacking alloy and non-magnetic metal in the thickness direction, and the concentrations of different elements of the alloy layer are changed in a unidirectional mode along the normal direction; the functional insulating layer may be magnesium oxide;
the isolation layer is used for adjusting the relative direction of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment direction of the magnetic multi-period layer; the isolation layer may be alumina;
the functional nonmagnetic layer is introduced with 10mA pulse current, the pulse current excites spin current in the functional nonmagnetic layer to act on the magnetic layer, and the multi-configuration Hall balance material forms a pair of magnetic Sgeminmuning with opposite polarity directions.
The embodiment of the invention also provides a method for preparing the multi-configuration Hall balance material with topological magnetism, which comprises the following steps:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film; wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 1 nm/mm.
And S12, preparing a magnetic monolayer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic monolayer is 0.6 nm.
S13, preparing an isolation layer by using the magnetron sputtering system/molecular beam epitaxy system in cooperation with the wedge-shaped baffle accessory with adjustable position, wherein the thickness range of the isolation layer is 0.6nm to 10nm, the thickness of the isolation layer is changed in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept at 1 nm/mm.
S14, preparing a magnetic multi-period layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic multi-period layer is 0.8nm, the concentration of different elements in the alloy layer is changed unidirectionally along the normal direction of the film, and the concentration gradient is 2%/nm.
And S15, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer is 3 nm.
S2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 250 ℃ and the time is 1 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 1 μm, and the length of the long strip is 50 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
In the preparation process of the multi-configuration Hall balance material, the functional nonmagnetic layer and the magnetic layer in S1 adopt a direct-current sputtering process, and the sputtering power is 30W. The isolation layer and the functional insulating layer in the step S1 adopt a radio frequency sputtering process, and the sputtering power is 90W.
Example 2
The embodiment of the invention provides a multi-configuration Hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer for providing spin current, at least two magnetic layers and a functional insulating layer; the functional nonmagnetic layer may be an alloy; the two magnetic layers are respectively a magnetic multi-period layer and a magnetic single layer, the magnetic single layer is an alloy, the magnetic multi-period layer is a multi-layer structure formed by stacking iron and non-magnetic metals in the thickness direction, and the concentrations of different elements of an alloy layer in the magnetic single layer are changed in a single direction along the normal direction; the functional insulating layer may be titanium oxide;
the isolation layer is used for adjusting the relative direction of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment direction of the magnetic multi-period layer; the isolation layer may be ruthenium;
the functional nonmagnetic layer is introduced with 30mA pulse current, the pulse current excites spin current in the functional nonmagnetic layer to act on the magnetic layer, and the multi-configuration Hall balance material forms a pair of magnetic Sgeminmuning with opposite polarity directions.
The embodiment of the invention also provides a method for preparing the multi-configuration Hall balance material with topological magnetism, which comprises the following steps:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film; wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 3 nm/mm.
And S12, preparing a magnetic multi-period layer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic multi-period layer is 3 nm.
S13, preparing an isolation layer by using a magnetron sputtering system/molecular beam epitaxy system in cooperation with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the isolation layer is 0.6nm to 10nm, the thickness of the isolation layer is changed in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept at 2 nm/mm.
S14, preparing a magnetic single layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness range of the magnetic single layer is 4nm, the concentrations of different elements of an alloy layer in the magnetic single layer are changed unidirectionally along the normal direction of the film, and the concentration gradient is 10%/nm.
And S15, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer is 7 nm.
S2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 330 ℃ and the time is 2 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 15 μm, and the length of the long strip is 100 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
In the preparation process of the multi-configuration Hall balance material, the functional nonmagnetic layer, the isolation layer and the magnetic layer in the S1 adopt a direct current sputtering process, and the sputtering power is 80W. The functional insulating layer in the S1 adopts a radio frequency sputtering process, and the sputtering power is 150W.
Example 3
The embodiment of the invention provides a multi-configuration Hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer for providing spin current, at least two magnetic layers and a functional insulating layer; the functional nonmagnetic layer may be copper oxide; the two magnetic layers are both magnetic single layers and are made of alloy, and the concentrations of different elements in the alloy layers in the magnetic single layers are changed in a unidirectional mode along the normal direction; the functional insulating layer may be a mixture of silicon oxide and silicon nitride;
the isolation layer is used for adjusting the relative direction of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment direction of the magnetic multi-period layer; the isolation layer may be an alloy;
60mA pulse current is introduced into the functional nonmagnetic layer, the pulse current excites spin current in the functional nonmagnetic layer to act on the magnetic layer, and the multi-configuration Hall balance material forms a pair of magnetic Sgeminmunins with opposite polarity directions.
The embodiment of the invention also provides a method for preparing the multi-configuration Hall balance material with topological magnetism, which comprises the following steps:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulation layer by layer in a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film; wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 5 nm/mm.
And S12, preparing a magnetic layer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic monolayer is 6 nm. The concentration of different elements in the alloy of the magnetic monolayer is changed along the normal direction of the magnetic monolayer in a unidirectional way, and the concentration gradient is 15%/nm.
S13, preparing an isolation layer by using a magnetron sputtering system and/or a molecular beam epitaxy system in cooperation with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness of the isolation layer ranges from 0.6nm to 10nm, the thickness of the isolation layer changes in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept at 3.5 nm/mm.
S14, preparing a magnetic layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness range of the magnetic monolayer is 8nm, the concentrations of different elements in the alloy of the magnetic monolayer are changed unidirectionally along the normal direction of the magnetic monolayer (or the film), and the concentration gradient range is 20%/nm.
And S15, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer is 10 nm.
S2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 400 ℃, and the time is 3 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 30 μm, and the length of the long strip is 200 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
In the preparation process of the multi-configuration Hall balance material, the isolation layer and the magnetic layer in the S1 adopt a direct current sputtering process, and the sputtering power is 120W. The functional nonmagnetic layer and the functional insulating layer in the step S1 adopt a radio frequency sputtering process, and the sputtering power is 200W.
Example 4
The embodiment of the invention provides a multi-configuration Hall balance material with topological magnetism, which sequentially comprises a functional nonmagnetic layer for providing spin current, three magnetic layers and a functional insulating layer; the functional nonmagnetic layer may be hafnium; the three magnetic layers are respectively a magnetic single layer, a magnetic single layer and a magnetic multi-period layer, the two magnetic single layers are respectively cobalt and nickel, the magnetic multi-period layer is a multi-layer structure formed by stacking iron, alloy and non-magnetic metal in the thickness direction, and the concentration of different elements of the alloy layer is changed in a single direction along the normal direction; the functional insulating layer may be magnesium oxide;
the isolation layer is used for adjusting the relative direction of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment direction of the magnetic multi-period layer; the isolation layer may be alumina;
the functional nonmagnetic layer is introduced with 30mA pulse current, the pulse current excites spin current in the functional nonmagnetic layer to act on the magnetic layer, and the multi-configuration Hall balance material forms a pair of magnetic Sgeminmuning with opposite polarity directions.
The embodiment of the invention also provides a method for preparing the multi-configuration Hall balance material with topological magnetism, which comprises the following steps:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film; wherein the layer-by-layer preparation may comprise the steps of:
s11, preparing a functional nonmagnetic layer by using a magnetron sputtering system/molecular beam epitaxy system and matching with a wedge-shaped baffle accessory with an adjustable position, wherein the thickness range of the functional nonmagnetic layer is 1.5nm-20nm, the thickness of the functional nonmagnetic layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is 1 nm/mm.
And S12, preparing a magnetic monolayer between the functional nonmagnetic layer and the isolation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic monolayer is 0.6 nm.
S13, preparing an isolation layer by using the magnetron sputtering system/molecular beam epitaxy system in cooperation with the wedge-shaped baffle accessory with adjustable position, wherein the thickness range of the isolation layer is 0.6nm to 10nm, the thickness of the isolation layer is changed in a unidirectional mode in the in-plane direction, and the thickness difference in the in-plane direction is kept at 1 nm/mm.
And S14, preparing another magnetic monolayer with the thickness of 0.8nm by using a magnetron sputtering system/molecular beam epitaxy system.
S15, preparing another isolation layer by using the magnetron sputtering system/molecular beam epitaxy system in cooperation with the wedge-shaped baffle accessory with adjustable position, wherein the thickness of the isolation layer ranges from 0.6nm to 10nm, the thickness of the isolation layer changes unidirectionally in the in-plane direction, and the thickness difference in the in-plane direction is kept at 1 nm/mm.
S16, preparing a magnetic multi-period layer between the isolation layer and the functional insulation layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the magnetic multi-period layer is 1.0nm, the concentration of different elements in an alloy layer in the magnetic multi-period layer is changed unidirectionally along the normal direction of the film, and the concentration gradient is 2.5%/nm.
And S17, preparing a functional insulating layer by using a magnetron sputtering system/molecular beam epitaxy system, wherein the thickness of the functional insulating layer is 3 nm.
S2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 400 ℃, and the time is 3 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 20 μm, and the length of the long strip is 100 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
In the preparation process of the multi-configuration Hall balance material, the functional nonmagnetic layer and the magnetic layer in S1 adopt a direct current sputtering process, and the sputtering power is 100W. The isolation layer and the functional insulating layer in the step S1 adopt a radio frequency sputtering process, and the sputtering power is 100W.
The foregoing describes preferred embodiments of the present invention, and is intended to provide a clear and concise description of the spirit and scope of the invention, and not to limit the same, but to include all modifications, substitutions, and alterations falling within the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The multi-configuration Hall balance material with topological magnetism is characterized by sequentially comprising a functional nonmagnetic layer for providing spin current, at least two magnetic layers and a functional insulating layer;
an isolation layer is arranged between the two adjacent magnetic layers, the two adjacent magnetic layers are used for providing magnetic moments in different controllable directions, the isolation layer is used for adjusting the relative directions of the magnetic moments of the two adjacent magnetic layers, and the functional insulation layer is used for assisting in adjusting the magnetic moment directions of the magnetic layers;
and (3) introducing 10-60 mA pulse current to the functional nonmagnetic layer, and forming a pair of magnetic Sgeminmates with opposite polarity directions by the multi-configuration Hall balance material.
2. The multi-configuration hall balance material according to claim 1, wherein the functional nonmagnetic layer is copper oxide or at least one of hafnium, tantalum, platinum, gold, ruthenium, iridium and palladium, or an alloy thereof, the thickness of the functional nonmagnetic layer varies unidirectionally in the in-plane direction, and the difference in thickness in the in-plane direction is 0nm/mm to 5 nm/mm.
3. The multi-configuration hall balance material of claim 2 wherein the functional nonmagnetic layer has a thickness of 1.5nm to 20nm and the thickness difference in the in-plane direction is 0nm/mm to 5 nm/mm.
4. The multi-configuration hall balance material of claim 1 wherein the functional insulating layer is 3nm to 10nm thick and is at least one of magnesium oxide, titanium oxide, silicon nitride, and hafnium oxide.
5. The multi-configuration hall balance material of claim 1 wherein the spacer layer is at least one of aluminum oxide, zinc oxide, magnesium oxide, nickel oxide, titanium oxide, or a simple substance or alloy of ruthenium, hafnium, tantalum, platinum, gold, ruthenium, iridium, palladium, and the thickness of the spacer layer varies unidirectionally in the in-plane direction.
6. The multi-configuration hall balance material of claim 5 wherein the spacer layer has a thickness of 0.6nm to 10nm and the in-plane thickness difference is 0nm/mm to 3.5 nm/mm.
7. The multi-configuration hall balance material according to any one of claims 1 to 6, wherein the magnetic layer is a magnetic single layer or a magnetic multi-period layer, the magnetic single layer is at least one of a simple substance or an alloy of iron, cobalt, and nickel, and the magnetic multi-period layer is a multi-layer structure in which at least one of a simple substance or an alloy of iron, cobalt, and nickel and a non-magnetic metal are stacked in a thickness direction.
8. The multi-configuration hall balance material of claim 7 wherein the magnetic layer has a thicknesshThe range of (A) is as follows:
wherein the thickness h is in nm, and N is the number of layers of the magnetic layer counted from the vicinity of the functional nonmagnetic layer.
9. The multi-configuration hall balance material of claim 7 wherein the magnetic layer comprises at least one alloy layer, the alloy layer having a unidirectional concentration of different elements along the normal direction;
the alloy layer is an Nth layer, and the concentration gradient of the elements in the alloy layer of the Nth layercgThe range of (A) is as follows:
wherein the content of the first and second substances,cgis the mass concentration of the element component in%/nm, and N is the number of layers of the magnetic layer counted from the vicinity of the functional nonmagnetic layer.
10. A method for producing a multi-configuration hall balance material with topological magnetic properties according to any one of claims 1 to 9, comprising:
s1: preparing a functional nonmagnetic layer, a magnetic layer, an isolation layer and a functional insulating layer by using a molecular beam epitaxy system and/or a magnetron sputtering system to obtain an initial multi-configuration Hall balance film;
s2: carrying out vacuum heat treatment on the initial multi-configuration Hall balance film in S1, wherein the temperature of the vacuum heat treatment is 250-400 ℃, and the time is 1-3 h;
s3: and (4) making the initial multi-configuration Hall balance thin film subjected to S2 into a long strip, wherein the width of the long strip is 1-30 μm, and the length of the long strip is 50-200 μm, so as to obtain the multi-configuration Hall balance material with topological magnetism.
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