CN113871548A - Display panel and preparation method thereof - Google Patents
Display panel and preparation method thereof Download PDFInfo
- Publication number
- CN113871548A CN113871548A CN202111121280.8A CN202111121280A CN113871548A CN 113871548 A CN113871548 A CN 113871548A CN 202111121280 A CN202111121280 A CN 202111121280A CN 113871548 A CN113871548 A CN 113871548A
- Authority
- CN
- China
- Prior art keywords
- substrate
- light
- light emitting
- adjacent
- quantum dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The application discloses a display panel and a preparation method thereof, the display panel comprises a color film substrate, an array substrate and a reflection retaining wall, the color film substrate comprises a first substrate and a plurality of quantum dot portions arranged on the first substrate at intervals, the array substrate comprises a second substrate and a plurality of light-emitting devices arranged on the second substrate at intervals, the array substrate is attached to the color film substrate, the light-emitting devices and the quantum dot portions are correspondingly arranged, the reflection retaining wall is arranged between every two adjacent light-emitting devices, and the thickness of the reflection retaining wall is larger than that of the light-emitting devices. Through set up the reflection barricade between light emitting device, avoid light emitting device's light to influence adjacent quantum dot portion to avoid appearing the problem of optical crosstalk, and then improve display panel's display effect.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
The Quantum Dot-light emitting diode structure display consists of a Quantum Dot Color Film (QDCF) and a light emitting diode, and not only has the characteristics of self-luminescence, thinning and flexibility of the light emitting diode device, but also has the advantage of high Color gamut of the Quantum dots. The structure device converts backlight light into corresponding light by utilizing photoluminescence characteristics of quantum dots in QDCF, thereby realizing full-color display.
However, the current quantum dot-light emitting diode display still has the required problems, such as poor display effect and the like.
Disclosure of Invention
The embodiment of the application provides a display panel and a preparation method thereof, and aims to solve the problem that the display effect of the display panel is poor in the prior art.
Accordingly, the present application provides a display panel comprising:
the color film substrate comprises a first substrate and a plurality of quantum dot parts arranged on the first substrate at intervals;
the array substrate comprises a second substrate and a plurality of light-emitting devices arranged on the second substrate at intervals, the array substrate is attached to the color film substrate, and the light-emitting devices are arranged corresponding to the quantum dot portions; and
the reflection barricade, the reflection barricade sets up in every two adjacent between the light emitting device, the thickness of reflection barricade is greater than the thickness of light emitting device.
Optionally, in some embodiments of the present application, the color filter substrate further includes a light shielding portion disposed on the first substrate, the light shielding portion is located between every two adjacent quantum dot portions, and the reflective retaining wall is disposed on the array substrate.
Optionally, in some embodiments of the present application, the reflection retaining wall is disposed between the first substrate and the second substrate, and the reflection retaining wall is located between every two adjacent quantum dot portions, and the thickness of the reflection retaining wall is greater than the sum of the thicknesses of the quantum dot portions and the light emitting device.
Optionally, in some embodiments of the present application, every two adjacent reflective barriers are disposed between every two adjacent light emitting devices.
Optionally, in some embodiments of the present application, each of the reflective barriers surrounds one of the light emitting devices.
Optionally, in some embodiments of the present application, two adjacent reflective barriers extending along the row direction and arranged along the column direction are disposed between two adjacent columns of the light emitting devices; every two adjacent reflecting retaining walls extending along the column direction and arranged along the row direction are arranged between every two adjacent rows of the light-emitting devices; every two adjacent reflecting retaining walls extending along the row direction and arranged along the column direction are intersected with every two adjacent reflecting retaining walls extending along the column direction and arranged along the row direction.
Optionally, in some embodiments of the present application, each of the reflective barriers extending along the row direction and arranged along the column direction is disposed between every two adjacent columns of the light emitting devices; each of the reflective retaining walls extending in the column direction and arranged in the row direction is disposed between the light emitting devices in each two adjacent rows; each of the reflective walls extending in the row direction and arranged in the column direction intersects each of the reflective walls extending in the column direction and arranged in the row direction.
Optionally, in some embodiments of the present application, the thickness of the reflective wall is 120 micrometers to 140 micrometers, and the thickness of the light emitting device is less than or equal to 100 micrometers.
Correspondingly, the application also provides a preparation method of the display panel, which comprises the following steps:
providing a first substrate;
forming a plurality of quantum dot parts on the first substrate, wherein the quantum dot parts are arranged at intervals, and the quantum dot parts and the first substrate form a color film substrate;
providing a second substrate;
forming a plurality of reflecting retaining walls on the second substrate, wherein the reflecting retaining walls are arranged at intervals;
forming a light-emitting device between every two adjacent reflecting retaining walls, wherein the second substrate and the light-emitting device form an array substrate; and
and attaching the array substrate and the color film substrate, wherein the light-emitting device is arranged corresponding to the quantum dot part, and the thickness of the reflection retaining wall is 120-140 micrometers.
Optionally, in some embodiments of the present application, the reflective wall is formed on the second substrate by an electrofluid inkjet printing process.
The application provides a display panel and a preparation method thereof, the display panel comprises a color film substrate, an array substrate and a reflection retaining wall, the color film substrate comprises a first substrate and a plurality of quantum dot portions arranged on the first substrate at intervals, the array substrate comprises a second substrate and a plurality of light-emitting devices arranged on the second substrate at intervals, the array substrate is attached to the color film substrate, the light-emitting devices and the quantum dot portions are arranged correspondingly, the reflection retaining wall is arranged between every two adjacent light-emitting devices, and the thickness of the reflection retaining wall is larger than that of the light-emitting devices. Through set up the reflection barricade between luminescent device, avoid luminescent device's light influence the quantum dot portion that adjacent luminescent device corresponds with it, and then avoid appearing the problem of optical crosstalk, and then improve display panel's display effect. Through set up the reflection barricade between light emitting device, improve the reflection of the light that light emitting device sent to gather together the light that light emitting device sent, thereby improved the light utilization ratio, and then improved the luminous efficacy of quantum dot portion, thereby improved display panel's luminous intensity, thereby improved display panel's display effect, and then improved display panel's display performance.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a first schematic plan view of a display panel provided in an embodiment of the present application.
Fig. 2 is a schematic view of the display panel of fig. 1 along line AB in a first structure.
Fig. 3 is a schematic diagram of a second structure of the display panel of fig. 1 along line AB.
Fig. 4 is a schematic view of a third structure of the display panel of fig. 1 along line AB.
Fig. 5 is a second schematic plan view of a display panel provided in an embodiment of the present application.
Fig. 6 is a third schematic plan view of a display panel provided in an embodiment of the present application.
Fig. 7 is a schematic flow chart of a manufacturing method of a display panel provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device. In the present application, the "reaction" may be a chemical reaction or a physical reaction.
The embodiment of the application provides a display panel and a preparation method thereof. The following are detailed below.
The application provides a display panel, display panel includes various membrane base plate, array substrate and reflection barricade, and various membrane base plate includes that first basement and a plurality of interval set up the quantum dot portion on first basement, and array substrate includes that second basement and a plurality of interval set up the light emitting device on the second basement, and array substrate and various membrane base plate laminating, and light emitting device and quantum dot portion correspond the setting, and the reflection barricade sets up between per two adjacent light emitting device, and the thickness of reflection barricade is greater than the thickness of light emitting device.
In this application, through set up the reflection barricade between light emitting device, and the thickness of reflection barricade sets up to be greater than light emitting device's thickness, avoids light emitting device's light influence the quantum dot portion that adjacent light emitting device corresponds with it, and then avoids appearing the problem of optical crosstalk, and then improves display panel's display effect.
The following are detailed below.
Referring to fig. 1 and fig. 2, fig. 1 is a first schematic plan view of a display panel according to an embodiment of the present disclosure. Fig. 2 is a first schematic cross-sectional view of the display panel of fig. 1 along line AB. The present application provides a display panel. The specific description is as follows:
the display panel 10 includes a color film substrate 100, an array substrate 200, and a reflective barrier 300.
The color filter substrate 100 includes a first substrate 110, a black matrix 120, a color filter portion 130, a shading portion 140, and a quantum dot portion 150. The black matrix 120 array is disposed on the first substrate 110. The color film portion 130 is disposed between every two adjacent black matrices 120. The color film portion 130 includes a red color film portion 130, a green color film portion 130, and a blue color film portion 130. The light shielding portions 140 are disposed on the black matrix 120, and the light shielding portions 140 are disposed at intervals. The quantum dot portions 150 are disposed between every two adjacent light-shielding portions 140, and the quantum dot portions 150 are disposed corresponding to the color film portions 130. The quantum dot part 150 includes a red quantum dot part, a green quantum dot part, and a white quantum dot part. The red quantum dot portion is arranged corresponding to the red color film portion, the green quantum dot portion is arranged corresponding to the green color film portion, and the white quantum dot portion is arranged corresponding to the blue color film portion.
In the present application, the color film portion 130 corresponding to the quantum dot portion 150 is disposed in the quantum dot portion 150, so that the light emitted by the light emitting device 230 is not completely converted into corresponding light after passing through the quantum dot portion 150, and the corresponding light can be converted by the color film portion 130, so as to convert the required light, and thus the display effect of the display panel 10 is improved.
The array substrate 200 includes a second substrate 210, a transistor layer 220, and a light emitting device 230. The transistor layer 220 is disposed on the second substrate 210. An array of light emitting devices 230 is disposed on transistor layer 220. The light emitting device 230 is one or a combination of red, blue and green light emitting devices. In the present embodiment, the light emitting device 230 is exemplified as a blue light emitting device.
In one embodiment, the light emitting device 230 includes a mini light emitting diode, an organic light emitting diode, an inorganic light emitting diode, or the like, and the light emitting device 230 may be a front-mounted light emitting device 230 or a flip-chip light emitting device 230. In the present embodiment, a mini led with the light emitting device 230 as a flip chip is taken as an example.
The reflective walls 300 include each of the reflective walls 300 extending in the row direction and arranged in the column direction and each of the reflective walls 300 extending in the row direction and arranged in the column direction.
Each of the reflective barriers 300 extending in the row direction and arranged in the column direction is disposed between each two adjacent columns of the light emitting devices 230. Each of the reflective barriers 300 extending in the column direction and arranged in the row direction is disposed between the light emitting devices 230 of each two adjacent rows. Each of the reflective walls 300 extending in the row direction and arranged in the column direction intersects each of the reflective walls 300 extending in the column direction and arranged in the row direction. The array substrate 200 and the color film substrate 100 are aligned and attached. The reflective wall 300 is disposed corresponding to the light shielding portion 140. The light emitting device 230 is disposed corresponding to the quantum dot part 150. The thickness of the reflective wall 300 is greater than that of the light emitting device 230.
In the present application, a reflective wall 300 is disposed between each two adjacent rows and columns of the light emitting devices 230, and the thickness of the reflective wall 300 is greater than that of the light emitting devices 230, so that the lateral light of the light emitting devices 230 is reflected by the reflective wall 300, thereby eliminating the possibility of exciting adjacent pixels, i.e., preventing the lateral light of the light emitting devices 230 from affecting the quantum dot portions 150 corresponding to the adjacent light emitting devices 230, and further avoiding the optical crosstalk, and further improving the display effect of the display panel 10. Set up between the light emitting device 230 of every two adjacent rows and columns and all set up a reflection barricade 300, and the thickness of reflection barricade 300 is greater than the thickness of light emitting device 230, make the side direction light of light emitting device 230 reflected by reflection barricade 300, thereby gather together the side direction light of light emitting device 230, thereby the luminous intensity of light emitting device 230 front side has been improved, and then the luminous efficiency of quantum dot portion 150 has been improved, thereby the luminous intensity of display panel 10 has been improved, thereby the display effect of display panel 10 has been improved, and then the display performance of display panel 10 has been improved.
In one embodiment, the thickness H of the light emitting device 230 is less than or equal to 100 microns. Specifically, the thickness H of the light emitting device 230 may be 10 micrometers, 20 micrometers, 50 micrometers, 70 micrometers, 80 micrometers, 100 micrometers, or the like. The thickness W of the reflective wall 300 is 120 to 140 micrometers. Specifically, the thickness W of the reflective wall 300 may be 120 micrometers, 125 micrometers, 130 micrometers, 135 micrometers, or 140 micrometers.
In the present application, a reflective wall 300 is disposed between every two adjacent rows and columns of the light emitting devices 230, the thickness of the reflective wall 300 is greater than the thickness of the light emitting devices 230, and the thickness H of the light emitting devices 230 is less than or equal to 100 micrometers, and the thickness W of the reflective wall 300 is 120 micrometers to 140 micrometers, so that the lateral light of the light emitting devices 230 is further reflected by the reflective wall 300, thereby further eliminating the possibility of exciting adjacent pixels, i.e., further avoiding the lateral light of the light emitting devices 230 from affecting the quantum dot portions 150 corresponding to the light emitting devices 230 disposed adjacent thereto, further avoiding the problem of optical crosstalk, and further improving the display effect of the display panel 10. Set up between the light emitting device 230 of every two adjacent rows and columns and all set up a reflection barricade 300, and the thickness of reflection barricade 300 is greater than the thickness of light emitting device 230, make the side direction light of light emitting device 230 reflected by reflection barricade 300, thereby further gather together the side direction light of light emitting device 230, thereby further improved the luminous intensity of light emitting device 230 front side, and then further improved the luminous efficiency of quantum dot portion 150, thereby further improved the luminous intensity of display panel 10, thereby further improved the display effect of display panel 10, and then further improved the display performance of display panel 10, and reduce cost.
In one embodiment, the material of the reflective wall 300 is one or more of titanium dioxide and silver paste with high viscosity. In the present application, the material of the reflective wall 300 is titanium dioxide and silver paste with high viscosity, so that the reflective wall 300 can be formed by an electrofluid inkjet printing process, the precision and thickness of the reflective wall 300 are improved, and the performance of the display panel 10 is improved.
In an embodiment, the display panel 10 further includes a sealant 400. The sealant 400 is disposed between the first substrate 110 and the second substrate 210 and located at the edges of the first substrate 110 and the second substrate 210.
Referring to fig. 3, fig. 3 is a second cross-sectional view of the display panel of fig. 1 along line AB. It should be noted that the second structure is different from the first structure in that:
the light shielding portion 140 is not provided between every two adjacent quantum dot portions 150. A portion of the reflective wall 300 is disposed between every two adjacent light emitting devices 230, and another portion of the reflective wall 300 is disposed between every two adjacent quantum dot portions 150 corresponding to every two adjacent light emitting devices 230. The reflective wall 300 is disposed between the first substrate 110 and the second substrate 210, and the reflective wall 300 is disposed corresponding to the black matrix 120. The thickness H of the reflective wall 300 is greater than the sum of the thicknesses Q of the quantum dot part 150 and the light emitting device 230.
In the present application, the light shielding portion 140 is not disposed between every two adjacent quantum dot portions 150, and the reflective wall 300 is disposed between every two adjacent light emitting devices 230 and between every two adjacent quantum dot portions 150 corresponding thereto, and the thickness H of the reflective wall 300 is greater than the sum of the thicknesses Q of the quantum dot portions 150 and the light emitting devices 230, so that the lateral light of the light emitting devices 230 is reflected by the reflective wall 300, thereby eliminating the possibility of exciting adjacent pixels, i.e., preventing the lateral light of the light emitting devices 230 from affecting the quantum dot portions 150 corresponding to the light emitting devices 230 adjacent thereto, and simultaneously preventing the quantum dot portions 150 from affecting the quantum dot portions 150 adjacent thereto, thereby avoiding the problem of optical crosstalk, and further improving the display effect of the display panel 10. The light shielding portion 140 is not disposed between every two adjacent quantum dot portions 150, and the reflective wall 300 is disposed between every two adjacent light emitting devices 230 and between every two adjacent quantum dot portions 150 corresponding thereto, and the thickness H of the reflective wall 300 is greater than the sum of the thicknesses Q of the quantum dot portions 150 and the light emitting devices 230, so that the lateral light of the light emitting devices 230 is reflected by the reflective wall 300, thereby gathering the lateral light of the light emitting devices 230, thereby improving the front light emitting intensity of the light emitting devices 230, and the reflective wall 300 can reflect the light converted by the quantum dot portions 150, thereby gathering the light converted by the quantum dot portions 150, further improving the light emitting efficiency of the quantum dot portions 150, thereby improving the light emitting intensity of the display panel 10, thereby improving the display effect of the display panel 10, and further improving the display performance of the display panel 10.
Referring to fig. 4, fig. 4 is a third structural diagram of the display panel of fig. 1 along line AB. It should be noted that the third structure is different from the first structure in that:
the light shielding portion 140 is not provided between every two adjacent quantum dot portions 150. A reflective wall 300 is disposed between every two adjacent light emitting devices 230, and a reflective wall 300 is also disposed between every two adjacent quantum dot portions 150 corresponding to every two adjacent light emitting devices 230. The reflective wall 300 is disposed corresponding to the black matrix 120. The sum of the thicknesses H of the reflective barriers 300 disposed between every two adjacent light emitting devices 230 and the reflective barriers 300 disposed between every two adjacent quantum dot portions 150 corresponding to every two adjacent light emitting devices 230 is greater than the sum of the thicknesses Q of the quantum dot portions 150 and the light emitting devices 230. The reflection barriers 300 are disposed between the light emitting devices 230 and between the quantum dot portions 150, so that the requirement of the manufacturing process of the reflection barriers 300 is reduced, and the luminous efficiency of the quantum dot portions 150 is improved, thereby improving the luminous intensity of the display panel 10, improving the display effect of the display panel 10, and improving the display performance of the display panel 10.
Referring to fig. 5, fig. 5 is a second plane view of a display panel according to an embodiment of the present disclosure. It should be noted that the difference between the second schematic plan view and the first schematic plan view is that:
the reflective barriers 300 are not disposed between each two adjacent rows and columns of the light emitting devices 230, but each reflective barrier 300 is disposed around one light emitting device 230 and one quantum dot portion 150.
In the present application, each reflective wall 300 is disposed around a light emitting device 230 and a quantum dot portion 150, that is, each reflective wall 300 is disposed around a pixel, so that the cost of the reflective wall 300 can be reduced.
Referring to fig. 6, fig. 6 is a third schematic plan view of a display panel according to an embodiment of the present disclosure. It should be noted that the difference between the third schematic plan view and the first schematic plan view is that:
each two adjacent reflective walls 300 extending in the row direction and arranged in the column direction are disposed between each two adjacent columns of light emitting devices 230. Each two adjacent reflective walls 300 extending in the column direction and arranged in the row direction are disposed between the light emitting devices 230 in each two adjacent rows. Each two adjacent reflective walls 300 extending in the row direction and arranged in the column direction intersect each two adjacent reflective walls 300 extending in the column direction and arranged in the row direction.
In the present application, the reflective barriers 300 of each two adjacent rows are disposed between the light emitting devices 230 of each two adjacent rows and the quantum dot portions 150 disposed corresponding to the light emitting devices 230, and the reflective barriers 300 of each two adjacent rows are disposed between the light emitting devices 230 of each two adjacent rows and the quantum dot portions 150 disposed corresponding to the light emitting devices 230, so as to further improve the reflection of the light emitted from the light emitting devices 230 and the light converted from the quantum dot portions 150, thereby gathering the light emitted from the light emitting devices 230 and the light converted from the quantum dot portions 150, further improving the light emitting efficiency of the quantum dot portions 150, further improving the light emitting intensity of the display panel 10, further improving the display effect of the display panel 10, further improving the display performance of the display panel 10, simplifying the preparation process of the reflective barriers 300, and shortening the production cycle. The reflective barriers 300 of each two adjacent rows are disposed between the light emitting devices 230 of each two adjacent rows and the quantum dot portions 150 disposed corresponding thereto, and the reflective barriers 300 of each two adjacent rows are disposed between the light emitting devices 230 of each two adjacent rows and the quantum dot portions 150 disposed corresponding thereto, so that the lateral light of the light emitting devices 230 is further reflected by the reflective barriers 300, thereby further eliminating the possibility of exciting the adjacent pixels, i.e., further preventing the lateral light of the light emitting devices 230 from affecting the quantum dot portions 150 corresponding to the light emitting devices 230 disposed adjacent thereto, further avoiding the problem of optical crosstalk, and further improving the display effect of the display panel 10.
The application provides a display panel 10, the display panel 10 includes a color film substrate 100, an array substrate 200 and a reflective barrier 300, the color film substrate 100 includes a first substrate 110 and a plurality of quantum dot portions 150 arranged on the first substrate 110 at intervals, the array substrate 200 includes a second substrate 210 and a plurality of light emitting devices 230 arranged on the second substrate 210, and the light emitting devices 230 are arranged at intervals; the array substrate 200 is attached to the color filter substrate 100, the light emitting devices 230 are disposed corresponding to the quantum dot portions 150, the reflective barriers 300 are disposed between every two adjacent light emitting devices 230, and the thickness of the reflective barriers 300 is greater than that of the light emitting devices 230. By disposing the reflective barriers 300 between the light emitting devices 230, the light of the light emitting devices 230 is prevented from affecting the quantum dot portions 150 corresponding to the adjacent light emitting devices 230, so as to avoid the problem of optical crosstalk, thereby improving the display effect of the display panel 10. By arranging the reflection retaining wall 300 between the light emitting devices 230, the reflection of the light emitted by the light emitting devices 230 is improved, so that the light emitted by the light emitting devices 230 is gathered, the light utilization rate is improved, the light emitting efficiency of the quantum dot portions 150 is improved, the luminous intensity of the display panel 10 is improved, the display effect of the display panel 10 is improved, and the display performance of the display panel 10 is improved.
Referring to fig. 7, fig. 7 is a schematic flow chart illustrating a manufacturing method of a display panel according to an embodiment of the present disclosure. The present application further provides a method for manufacturing a display panel 10, including:
example 1
Please continue with fig. 2.
B11, providing a first substrate.
In an embodiment, after step B11, the method further includes:
a black matrix 120 material is disposed on the first substrate 110 and patterned to form the black matrix 120. Every two adjacent black matrices 120 are disposed at intervals.
In an embodiment, after the step of forming the black matrix 120 on the first substrate 110, the method further includes:
a color film portion 130 is formed between every two adjacent black matrices 120.
In one embodiment, after the step of forming the color film portion 130 between every two adjacent black matrixes 120, the method further includes:
the light-shielding portion 140 is formed by patterning a light-shielding portion 140 material provided on the black matrix 120 and the color film portion 130, and the light-shielding portion 140 is provided corresponding to the black matrix 120.
And B12, forming a plurality of quantum dot parts on the first substrate, wherein the quantum dot parts are arranged at intervals, and the quantum dot parts and the first substrate form a color film substrate.
The quantum dot portion 150 is formed between every two adjacent light shielding portions 140 using an inkjet printing process. The first substrate 110, the black matrix 120, the light shielding portion 140, and the quantum dot portion 150 constitute a color filter substrate 100.
B13, providing a second substrate.
In an embodiment, after step B13, the method further includes:
a transistor layer 220 is formed on the second substrate 210.
And B14, forming a plurality of reflecting retaining walls on the second substrate, wherein every two adjacent reflecting retaining walls are arranged at intervals.
The reflective barriers 300 are prepared on the transistor layer 220 by an electrofluid ink-jet printing process, and every two adjacent reflective barriers 300 are arranged at intervals. The material of the reflective retaining wall 300 is one or a combination of two of silver paste and titanium dioxide with high viscosity.
The electro-fluid ink-jet Printing (EHD Printing) utilizes the ink at a Printing nozzle to be polarized under the action of a high-voltage electric field and generate a Taylor cone, and the ink is ejected under a strong electric field.
And B15, forming a light emitting device between every two adjacent reflecting retaining walls, wherein the second substrate and the light emitting device form an array substrate.
The light emitting device 230 is formed on the transistor layer 220, and the light emitting device 230 is located between every two adjacent reflective barriers 300. The second substrate 210, the transistor layer 220, the reflective wall 300, and the light emitting device 230 constitute an array substrate 200.
And B16, attaching the array substrate and the color film substrate, arranging the light-emitting device and the quantum dot part correspondingly, and enabling the thickness of the reflection retaining wall to be larger than that of the light-emitting device.
The array substrate 200 is attached to the color film substrate 100 by using the sealant 400. The light emitting device 230 is disposed corresponding to the quantum dot part 150. The reflective wall 300 is disposed corresponding to the light shielding portion 140.
In the present application, the reflective barriers 300 are prepared by an electrofluid ink-jet printing process, so that the reflective barriers 300 are prepared with high precision and high thickness, thereby ensuring the performance of the display panel 10.
Example 2
Please continue to refer to fig. 3. Example 2 differs from example 1 in that:
the reflective wall 300 is not formed on the array substrate 200 side, but formed on the color filter substrate 100 side, and the light shielding portion 140 is not formed on the color filter substrate 100 side. Specifically, after the step of forming the color film portion 130 between every two adjacent black matrixes 120, the reflective barriers 300 are directly prepared by the electrofluid inkjet printing process, and the thickness H of the formed reflective barriers 300 is greater than the sum of the thicknesses Q of the quantum dot portions 150 and the light emitting devices 230. Other steps are the same as embodiment 1 and are not described herein.
Example 3
Please continue to refer to fig. 4. Example 3 differs from example 1 in that: the light shielding portion 140 is replaced by a reflective wall 300, so that the reflective wall 300 is disposed on both the color film substrate 100 side and the array substrate 200 side, the display effect of the display panel 10 is improved, and the performance of the display panel 10 is further improved. Other steps are the same as embodiment 1 and are not described herein.
The present application provides a display panel 10 and a manufacturing method thereof, the display panel 10 includes a color film substrate 100, an array substrate 200 and a reflective barrier 300, the color film substrate 100 includes a first substrate 110 and a plurality of quantum dot portions 150 arranged on the first substrate 110 at intervals, the array substrate 200 includes a second substrate 210 and a plurality of light emitting devices 230 arranged on the second substrate 210 at intervals, the array substrate 200 is attached to the color film substrate 100, the light emitting devices 230 are arranged corresponding to the quantum dot portions 150, the reflective barrier 300 is arranged between every two adjacent light emitting devices 230, and the thickness of the reflective barrier 300 is greater than that of the light emitting devices 230. By disposing the reflective barriers 300 between the light emitting devices 230, the light of the light emitting devices 230 is prevented from affecting the quantum dot portions 150 corresponding to the adjacent light emitting devices 230, so as to avoid the problem of optical crosstalk, thereby improving the display effect of the display panel 10. By arranging the reflection retaining wall 300 between the light emitting devices 230, the reflection of the light emitted by the light emitting devices 230 is improved, so that the light emitted by the light emitting devices 230 is gathered, the light utilization rate is improved, the light emitting efficiency of the quantum dot portions 150 is improved, the luminous intensity of the display panel 10 is improved, the display effect of the display panel 10 is improved, and the display performance of the display panel 10 is improved.
The display panel and the manufacturing method thereof provided by the embodiments of the present application are described in detail above, and the principle and the embodiment of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A display panel, comprising:
the color film substrate comprises a first substrate and a plurality of quantum dot parts arranged on the first substrate at intervals;
the array substrate comprises a second substrate and a plurality of light-emitting devices arranged on the second substrate at intervals, the array substrate is attached to the color film substrate, and the light-emitting devices are arranged corresponding to the quantum dot portions; and
the reflection barricade, the reflection barricade sets up in every two adjacent between the light emitting device, the thickness of reflection barricade is greater than the thickness of light emitting device.
2. The display panel according to claim 1, wherein the color filter substrate further comprises a light-blocking portion disposed on the first substrate, the light-blocking portion is disposed between every two adjacent quantum dot portions, and the reflective retaining wall is disposed on the array substrate.
3. The display panel according to claim 1, wherein the reflective barriers are disposed between the first substrate and the second substrate, and the reflective barriers are disposed between every two adjacent quantum dot portions, and the thickness of the reflective barriers is greater than the sum of the thicknesses of the quantum dot portions and the light emitting devices.
4. The display panel according to claim 1, wherein every two adjacent reflective barriers are disposed between every two adjacent light emitting devices.
5. The display panel according to claim 4, wherein each of the reflective barriers surrounds one of the light emitting devices.
6. The display panel according to claim 4, wherein every two adjacent ones of the reflective barriers extending in a row direction and arranged in a column direction are disposed between the light emitting devices of every two adjacent columns; every two adjacent reflecting retaining walls extending along the column direction and arranged along the row direction are arranged between every two adjacent rows of the light-emitting devices; every two adjacent reflecting retaining walls extending along the row direction and arranged along the column direction are intersected with every two adjacent reflecting retaining walls extending along the column direction and arranged along the row direction.
7. The display panel according to claim 1, wherein each of the reflective barriers extending in a row direction and arranged in a column direction is disposed between every two adjacent columns of the light emitting devices; each reflecting retaining wall extending along the column direction and arranged along the row direction is arranged between the light-emitting devices of each two adjacent rows; each of the reflective walls extending in the row direction and arranged in the column direction intersects each of the reflective walls extending in the column direction and arranged in the row direction.
8. The display panel of claim 1, wherein the thickness of the reflective wall is 120-140 μm, and the thickness of the light emitting device is less than or equal to 100 μm.
9. A method for manufacturing a display panel, comprising:
providing a first substrate;
forming a plurality of quantum dot parts on the first substrate, wherein the quantum dot parts are arranged at intervals, and the quantum dot parts and the first substrate form a color film substrate;
providing a second substrate;
forming a plurality of reflecting retaining walls on the second substrate, wherein the reflecting retaining walls are arranged at intervals;
forming a light-emitting device between every two adjacent reflecting retaining walls, wherein the second substrate and the light-emitting device form an array substrate; and
and attaching the array substrate and the color film substrate, wherein the light-emitting device and the quantum dot part are correspondingly arranged, and the thickness of the reflection retaining wall is greater than that of the light-emitting device.
10. The method according to claim 9, wherein the reflective barriers are formed on the second substrate by an electrofluid ink jet printing process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111121280.8A CN113871548A (en) | 2021-09-24 | 2021-09-24 | Display panel and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111121280.8A CN113871548A (en) | 2021-09-24 | 2021-09-24 | Display panel and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113871548A true CN113871548A (en) | 2021-12-31 |
Family
ID=78993920
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111121280.8A Pending CN113871548A (en) | 2021-09-24 | 2021-09-24 | Display panel and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113871548A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797378A (en) * | 2019-10-28 | 2020-02-14 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, manufacturing method and display panel |
| CN111048693A (en) * | 2019-12-06 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate and manufacturing method thereof |
| US20200133053A1 (en) * | 2018-10-25 | 2020-04-30 | Wuhan China Star Opoelectronics Technology Co., Ltd. | Color filter substrate and liquid crystal display device |
| CN112133734A (en) * | 2020-09-29 | 2020-12-25 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN112837627A (en) * | 2021-01-12 | 2021-05-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
-
2021
- 2021-09-24 CN CN202111121280.8A patent/CN113871548A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20200133053A1 (en) * | 2018-10-25 | 2020-04-30 | Wuhan China Star Opoelectronics Technology Co., Ltd. | Color filter substrate and liquid crystal display device |
| CN110797378A (en) * | 2019-10-28 | 2020-02-14 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate, manufacturing method and display panel |
| CN111048693A (en) * | 2019-12-06 | 2020-04-21 | 深圳市华星光电半导体显示技术有限公司 | Quantum dot color film substrate and manufacturing method thereof |
| CN112133734A (en) * | 2020-09-29 | 2020-12-25 | 湖北长江新型显示产业创新中心有限公司 | Display panel and display device |
| CN112837627A (en) * | 2021-01-12 | 2021-05-25 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10304901B1 (en) | Micro light-emitting diode display device and manufacturing method thereof | |
| US10692844B2 (en) | Micro-transfer printed LED and color filter structures | |
| CN109691231B (en) | Display device using semiconductor light emitting element | |
| US11296260B2 (en) | Light emitting device package and display apparatus using the same | |
| KR20190071274A (en) | Led lighting device package and display apparatus using the same | |
| KR20190071152A (en) | Led lighting device package and display apparatus using the same | |
| CN111668249A (en) | Display panel and manufacturing method thereof | |
| CN112786764B (en) | Light emitting device, display module, and method of manufacturing light emitting device | |
| CN112885823B (en) | Display panel, preparation method thereof and display device | |
| CN113725249B (en) | Chip structure, manufacturing method and display device | |
| WO2023207438A1 (en) | Display device and manufacturing method therefor | |
| CN112582441B (en) | Display panel, display device and preparation method of display panel | |
| US11315907B2 (en) | Full-color display module and display device | |
| CN113013310A (en) | Display panel and display device | |
| CN113903729A (en) | Micro LED display device and manufacturing method thereof | |
| US20230102283A1 (en) | Display panel and display device | |
| CN114566581A (en) | Display panel and method for manufacturing display panel | |
| CN111415973A (en) | Display panel and preparation method thereof | |
| CN214671553U (en) | Display device | |
| CN116314552A (en) | COB packaging method and COB display module | |
| CN113871548A (en) | Display panel and preparation method thereof | |
| US11609368B2 (en) | Display device having bank layers | |
| CN112038378B (en) | Color film substrate, manufacturing method thereof and display panel | |
| CN110376781B (en) | Substrate, preparation method thereof and display panel | |
| CN114063350A (en) | Light source module, display module and light source module preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |