CN113871439B - Quantum dot substrate manufacturing method and quantum dot substrate - Google Patents
Quantum dot substrate manufacturing method and quantum dot substrate Download PDFInfo
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- CN113871439B CN113871439B CN202111119232.5A CN202111119232A CN113871439B CN 113871439 B CN113871439 B CN 113871439B CN 202111119232 A CN202111119232 A CN 202111119232A CN 113871439 B CN113871439 B CN 113871439B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
Abstract
The embodiment of the application discloses a quantum dot substrate manufacturing method and a quantum dot substrate, wherein the quantum dot substrate manufacturing method comprises the following steps: arranging frame glue on a first substrate or a second substrate, wherein one side of the first substrate is provided with a plurality of grooves, the bottoms of the grooves are provided with first electrodes, and one side of the second substrate is provided with a second electrode; adding a quantum dot solution with quantum dots into the inner side of the frame glue; bonding the first substrate and the second substrate together through the frame glue, and enclosing the first substrate, the second substrate and the frame glue to form a reaction cavity, wherein a first electrode, a second electrode and a quantum dot solution are arranged in the reaction cavity; applying a voltage to the first electrode and the second electrode such that an electric field is formed between the first electrode and the second electrode, the electric field causing the quantum dots to deposit on the first electrode, thereby forming a quantum dot layer on the first electrode; the method and the device can solve the technical problems of low luminous efficiency, poor stability, low precision and poor repeatability of the quantum dot layer.
Description
Technical Field
The application relates to the technical field of display, in particular to a quantum dot substrate manufacturing method and a quantum dot substrate.
Background
Quantum Dot (QD) is a nanoscale semiconductor material with Quantum effects; fluorescent light of different colors can be emitted under excitation of electricity or light. The color gamut of the quantum dot display technology can reach 110% of the NTSC color gamut, so the quantum dot material can endow the display with a wider color gamut, and the terminal display has more beautiful color expression.
The existing processing method of the quantum dot layer mainly comprises a photoetching method and an ink-jet printing method, wherein the photoetching method is to disperse quantum dots in photoresist, then coat the photoresist on a substrate, and obtain a patterned quantum dot layer through exposure and development, wherein the surface chemical environment of the quantum dots is complex, the photoresist contains various polymer materials, the polymer materials have great influence on the quantum dots, and the problems of low luminous efficiency and poor stability of the quantum dots are easily caused; the quantum dot layer manufactured by the ink-jet printing method has the problems of low precision and poor repeatability.
Disclosure of Invention
The embodiment of the application provides a manufacturing method of a quantum dot substrate and the quantum dot substrate, which can solve the technical problems of low luminous efficiency, poor stability, low precision and poor repeatability of a quantum dot layer.
The embodiment of the application provides a manufacturing method of a quantum dot substrate, which comprises the following steps:
arranging frame glue on the first substrate or the second substrate, wherein one side of the first substrate is provided with a plurality of grooves, the bottoms of the grooves are provided with first electrodes, and one side of the second substrate is provided with a second electrode;
adding a quantum dot solution with quantum dots into the inner side of the frame glue;
bonding the first substrate and the second substrate together through the frame glue, wherein the first substrate, the second substrate and the frame glue are enclosed to form a reaction cavity, and the first electrode, the second electrode and the quantum dot solution are arranged in the reaction cavity;
applying a voltage to the first electrode and the second electrode such that an electric field is formed between the first electrode and the second electrode, the electric field causing the quantum dots to be deposited on the first electrode, thereby forming a quantum dot layer on the first electrode.
Optionally, in some embodiments of the present application, the manufacturing step of the first substrate specifically includes:
forming a retaining wall on the first substrate, wherein a plurality of grooves are surrounded by the retaining wall;
and forming the first electrode in the groove, thereby obtaining the first substrate.
Optionally, in some embodiments of the present application, before forming the retaining wall on the first substrate, the step of manufacturing the first substrate further includes: forming a circuit layer on the first substrate;
the first electrode formed later is electrically connected to the circuit layer;
the step of applying a voltage to the first electrode comprises: and applying voltage to the first electrode through the circuit layer.
Optionally, in some embodiments of the present application, the circuit layer includes a plurality of wires, and one or more of the first electrodes are electrically connected to the same wire.
Optionally, in some embodiments of the present application, the circuit layer includes a scan line, a data line insulated from the scan line and intersecting the scan line, and a thin film transistor disposed at an intersection of the scan line and the data line, where the scan line is electrically connected to a gate of the thin film transistor, the data line is electrically connected to a source of the thin film transistor, and the first electrode is electrically connected to a drain of the thin film transistor.
Optionally, in some embodiments of the present application, after the first electrode is formed in the groove, the manufacturing step of the first substrate specifically further includes: forming a spacer on the retaining wall;
after the first substrate and the second substrate are bonded together through the frame glue, one side, far away from the retaining wall, of the spacer is abutted against the second electrode.
Optionally, in some embodiments of the present application, before the first electrode is formed in the groove, the manufacturing step of the first substrate specifically further includes: forming an inorganic insulating layer at least on the retaining wall;
the spacers formed later are provided on the inorganic insulating layer.
Alternatively, in some embodiments of the present application, the quantum dot solution includes a quantum dot composition in an amount of 0.01wt% to 80wt% and a solvent in an amount of 20wt% to 99.9wt%, wherein the quantum dot composition includes the quantum dot and a ligand.
Alternatively, in some embodiments of the present application, the first electrode and the second electrode have an electric field strength of 5×10 when a voltage is applied to the first electrode and the second electrode 5 Volt/meter-4 x 10 7 Volts/meter.
The embodiment of the application also provides a quantum dot substrate, which is manufactured by adopting the manufacturing method of the quantum dot substrate, and comprises a first substrate, a first electrode arranged on the first substrate and a quantum dot layer arranged on the first electrode.
According to the manufacturing method of the quantum dot substrate and the quantum dot substrate, the frame glue is arranged on the first substrate or the second substrate, the quantum dot solution is added to the inner side of the frame glue, the first substrate and the second substrate are bonded together through the frame glue, so that a reaction cavity is formed by surrounding the first substrate, the second substrate and the frame glue together, a first electrode, a second electrode and the quantum dot solution are arranged in the reaction cavity, namely the quantum dot solution is arranged between the first electrode and the second electrode, after voltage is applied to the first electrode and the second electrode, a quantum dot layer can be formed on the first electrode in an electrophoresis deposition mode, compared with the method for manufacturing the quantum dot layer by photoetching, the quantum dot solution does not need photoresist, and therefore the problems of low luminous efficiency and poor stability of the quantum dot are not caused;
in addition, the grooves are formed in the first substrate, the first electrode is arranged at the bottom of the grooves, the grooves have a limiting effect on the deposition direction of the quantum dots and the shape of the quantum dot layer, the quantum dot layer can be grown gradually along the thickness direction, the uniformity of the thickness of the quantum single layer can be guaranteed, the patterning precision of the quantum dot layer can be improved, the consistency of the thickness and the shape of the quantum dot layer manufactured in the same batch is guaranteed, and compared with the quantum dot layer manufactured by adopting an ink-jet printing method, the quantum dot layer is high in manufacturing precision and high in repeatability;
therefore, the method and the device can solve the technical problems of low luminous efficiency, poor stability, low precision and poor repeatability of the quantum dot layer, and are favorable for manufacturing the quantum dot layer in a large area.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot substrate according to an embodiment of the present application;
FIG. 2 is a schematic diagram of adding a quantum dot solution between a first electrode and a second electrode and applying a voltage to the first electrode and the second electrode provided in an embodiment of the present application;
fig. 3 is a schematic cross-sectional structure of a quantum dot layer formed on a first electrode according to an embodiment of the present application;
fig. 4 is a schematic cross-sectional structure diagram of sequentially forming a circuit layer and a retaining wall on a first substrate according to an embodiment of the present application;
FIG. 5 is a schematic cross-sectional view of a first electrode formed in a recess according to an embodiment of the present application;
fig. 6 is a schematic diagram of a stacked structure of a first substrate and a first circuit layer according to an embodiment of the present application;
fig. 7 is a schematic diagram of a stacked structure of a first substrate and a second circuit layer according to an embodiment of the present application;
fig. 8 is a schematic cross-sectional view of a spacer formed on a retaining wall according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The embodiment of the application provides a manufacturing method of a quantum dot substrate and the quantum dot substrate. The following will describe in detail. The following description of the embodiments is not intended to limit the preferred embodiments. In addition, in the description of the present application, the term "comprising" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or on the order of construction. Various embodiments of the invention may exist in a range of forms; it should be understood that the description in a range format is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; it is therefore to be understood that the range description has specifically disclosed all possible sub-ranges and individual values within that range. For example, it should be considered that a description of a range from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the ranges, such as 1, 2, 3, 4, 5, and 6, wherever applicable. In addition, whenever a numerical range is referred to herein, it is meant to include any reference number (fractional or integer) within the indicated range.
Referring to fig. 1, and referring to fig. 2 and fig. 3, an embodiment of the present application provides a method for manufacturing a quantum dot substrate, which includes the following steps:
step B1, disposing a frame glue 300 on the first substrate 100 or the second substrate 200, wherein a plurality of grooves 131 are formed on one side of the first substrate 100, a first electrode 150 is formed at the bottom of the grooves 131, and a second electrode 210 is formed on one side of the second substrate 200;
step B2, adding a quantum dot solution 500 with quantum dots inside the frame glue 300, which can specifically but not be limited to adding the quantum dot solution 500 inside the frame glue 300 by direct dripping or printing process;
step B3, bonding the first substrate 100 and the second substrate 200 together through the frame glue 300, wherein the first substrate 100, the second substrate 200 and the frame glue 300 enclose a reaction cavity 400, and a first electrode 150, a second electrode 210 and a quantum dot solution 500 are arranged in the reaction cavity 400;
step B4, applying a voltage to the first electrode 150 and the second electrode 210, so that an electric field is formed between the first electrode 150 and the second electrode 210, and the electric field causes the quantum dots to be deposited on the first electrode 150, thereby forming the quantum dot layer 170 on the first electrode 150.
The manufacturing method of the quantum dot substrate has the following beneficial effects:
(1) By arranging the frame glue 300 on the first substrate 100 or the second substrate 200, adding the quantum dot solution 500 on the inner side of the frame glue 300, and bonding the first substrate 100 and the second substrate 200 together through the frame glue 300, so that the first substrate 100, the second substrate 200 and the frame glue 300 are jointly enclosed to form the reaction cavity 400, the first electrode 150, the second electrode 210 and the quantum dot solution 500 are arranged in the reaction cavity 400, namely, the quantum dot solution 500 is arranged between the first electrode 150 and the second electrode 210, after the voltage is applied to the first electrode 150 and the second electrode 210, the quantum dot layer 170 can be formed on the first electrode 150 in an electrophoretic deposition mode.
(2) In the embodiment of the application, the groove 131 is formed in the first substrate 100, the first electrode 150 is arranged at the bottom of the groove 131, the groove 131 has a limiting effect on the deposition direction of the quantum dots and the shape of the quantum dot layer 170, the gradual growth of the quantum dot layer 170 along the thickness direction is facilitated, the uniformity of the thickness of a quantum monolayer can be ensured, the patterning precision of the quantum dot layer 170 can be improved, the consistency of the thickness and the shape of the quantum dot layer 170 manufactured in the same batch is ensured, and compared with the quantum dot layer 170 manufactured by an ink-jet printing method, the quantum dot layer 170 has high manufacturing precision and high repeatability;
therefore, the technical problems of low luminous efficiency, poor stability, low precision and poor repeatability of the quantum dot layer 170 can be solved, and the quantum dot layer 170 can be manufactured in a large area.
Specifically, in step B1 of the embodiment of the present application, the manufacturing steps of the first substrate 100 specifically include:
b11, as shown in FIG. 4, forming a retaining wall 130 on the first substrate 110, wherein the retaining wall 130 encloses a plurality of grooves 131;
b12, as shown in fig. 5, a first electrode 150 is formed in the recess 131, thereby obtaining the first substrate 100. In this embodiment, a plurality of grooves 131 may be disposed on the first substrate 110, and the bottom of each groove 131 is provided with the first electrode 150, so that the quantum dot layer 170 is formed on the plurality of first electrodes 150 at one time later, thereby greatly improving the manufacturing efficiency. Of course, depending on the actual situation and the specific requirements, a recess 131 may also be provided on the first substrate 110, which is not limited herein.
Alternatively, the height of the retaining wall 130 may be 3 micrometers to 100 micrometers, for example, the height of the retaining wall 130 may be 3 micrometers, 5 micrometers, 10 micrometers, 15 micrometers, 20 micrometers, 25 micrometers, 30 micrometers, 35 micrometers, 40 micrometers, 45 micrometers, 50 micrometers, 55 micrometers, 60 micrometers, 65 micrometers, 70 micrometers, 75 micrometers, 80 micrometers, 85 micrometers, 90 micrometers, 95 micrometers or 100 micrometers, the retaining wall 130 under this height range has a good definition on the deposition direction of the quantum dots and the shape of the quantum dot layer 170, and the retaining wall 130 under this height range also has a good mechanical strength, and can well maintain the spacing between the first substrate 100 and the second substrate 200.
Specifically, in step B11 of the embodiment of the present application, a layer of the retaining wall material may be coated on the first substrate 110, and then the retaining wall material may be patterned, which may specifically, but not limited to, be patterned by a photolithography process or an ion beam etching process, so as to obtain the retaining wall 130. It should be understood that, according to the actual situation selection and specific requirements, the retaining wall 130 may also be manufactured by a dispensing process, a printing process, and a stamping process, which is not limited herein.
Optionally, the retaining wall material may be an organic light-cured material, an organic heat-cured material or an inorganic material, where the organic light-cured material may be selected from acrylate compounds, and the acrylate compounds may specifically include one or more of methyl acrylate compounds, ethyl acrylate compounds and propyl acrylate compounds; the organic thermosetting material may be selected from epoxy resin-based compounds, which may include at least one of butene epoxy resin and cyclopentadiene epoxy resin in particular; the inorganic material may be selected from one or more of silicon oxide, silicon nitride or silicon oxynitride.
Specifically, before step B11 of the present embodiment, that is, before forming the retaining wall 130 on the first substrate 110, the manufacturing steps of the first substrate 100 specifically further include:
b10, forming a circuit layer 120 on the first substrate 110;
in the subsequent step B11, the retaining wall 130 is formed on the circuit layer 120;
in the subsequent step B12, the formed first electrode 150 is electrically connected to the circuit layer 120;
in the subsequent step B4, the step of applying a voltage to the first electrode 150 is: a voltage is applied to the first electrode 150 through the wiring layer 120.
In this embodiment, the circuit layer 120 is disposed on the first substrate 110, so that voltage can be applied to the first electrodes 150 later, especially when a plurality of first electrodes 150 are disposed on the first substrate 110, voltage can be applied to a plurality of first electrodes 150 at a time through the circuit layer 120, and the operation is simple.
In detail, in the above step B10, as shown in fig. 4 to 6, the circuit layer 120 includes a plurality of traces 121, the first electrodes 150 formed in the grooves 131 are electrically connected to the traces 121, and specifically, one or more of the first electrodes 150 are electrically connected to the same trace 121, so that a voltage is applied to the first electrodes 150 through the traces 121. In this embodiment, the quantum dot substrate manufactured by using the first substrate 100 may be a quantum dot color film substrate. It should be noted that, in fig. 6, the dashed frame area is the formation area of the subsequent recess 131 and the first electrode 150, and the first electrode 150 is disposed in the dashed frame area, so that the first electrode 150 is overlapped with the trace 121, thereby realizing the electrical connection between the first electrode 150 and the trace 121.
Specifically, in the above step B10, as shown in fig. 4, 5 and 7, the circuit layer 120 includes at least one scan line 122, at least one data line 123 insulated from and intersecting the scan line 122, and at least one thin film transistor 124 disposed at the intersection of the scan line 122 and the data line 123, the scan line 122 is electrically connected to the gate of the corresponding thin film transistor 124, the data line 123 is electrically connected to the source of the corresponding thin film transistor 124, and the first electrode 150 is electrically connected to the drain of the corresponding thin film transistor 124. With this structure, in the subsequent electrophoretic deposition process, by energizing the designated scan line 122 and the data line 123, a voltage can be applied to the designated first electrode 150, thereby depositing a quantum dot material on the designated first electrode 150. In this embodiment, the quantum dot substrate manufactured using the first substrate 100 may be an organic light emitting diode substrate.
Specifically, before step B12 of the embodiment of the present application, that is, after the first electrode 150 is formed in the groove 131, the manufacturing step of the first substrate 100 specifically further includes:
b13, as shown in fig. 2 and 8, forming a spacer 160 on the retaining wall 130;
in the subsequent step B3, after the first substrate 100 and the second substrate 200 are adhered together by the sealant 300, the side of the spacer 160 away from the retaining wall 130 abuts against the second electrode 210.
In this embodiment, by disposing the spacer 160 on the retaining wall 130, the upper and lower ends of the spacer 160 are respectively abutted against the second electrode 210 and the retaining wall 130, so that the spacer 160 can be used to maintain the spacing between the first substrate 100 and the second substrate 200, so that the quantum dot solution 500 can flow between the first substrate 100 and the second substrate 200.
Specifically, in step B13 of the embodiment of the present application, a layer of the spacer material may be coated on the entire surface, and then the spacer material may be subjected to a patterning process, and specifically, the spacer material may be subjected to a patterning process by, but not limited to, a photolithography process or an ion beam etching process, thereby obtaining the above-described spacer 160. It will be appreciated that the spacer 160 may also be manufactured by a dispensing process, a printing process, or a stamping process, depending on the actual selection and specific requirements, which are not limited herein.
Optionally, the spacer material may be an organic light-cured material, an organic heat-cured material or an inorganic material, where the organic light-cured material may be selected from acrylate compounds, and the acrylate compounds may specifically include one or more of methyl acrylate compounds, ethyl acrylate compounds and propyl acrylate compounds; the organic thermosetting material may be selected from epoxy resin-based compounds, which may include at least one of butene epoxy resin and cyclopentadiene epoxy resin in particular; the inorganic material may be selected from one or more of silicon oxide, silicon nitride or silicon oxynitride.
Specifically, before step B12 of the embodiment of the present application, the manufacturing step of the first substrate 100 further specifically includes: as shown in fig. 5, an inorganic insulating layer 140 is formed at least on the retaining wall 130; in this way, the spacer 160 is formed on the inorganic insulating layer 140 in the subsequent step 13, and the spacer 160 cannot be well fixed on the retaining wall 130 because the adhesion capability of the spacer 160 on the retaining wall 130 is weak, so that the spacer 160 can be well fixed on the inorganic insulating layer 140 by forming the inorganic insulating layer 140 on the retaining wall 130 and correspondingly arranging the spacer 160 on the inorganic insulating layer 140 above the retaining wall 130, thereby effectively improving the reliability of the spacer 160 and preventing the spacer 160 from shifting.
Alternatively, the material of the inorganic insulating layer 140 may be selected from one or more of silicon oxide, silicon nitride, or silicon oxynitride.
In this embodiment, as shown in fig. 5, a layer of inorganic insulating layer 140 is disposed on the bottom of the recess 131 and the retaining wall 130, and in this structure, the inorganic insulating layer 140 is formed by covering the whole surface, so that the patterning process of the inorganic insulating layer 140 can be reduced, and the process is greatly simplified.
Specifically, in step B1 of the embodiment of the present application, the sealant 300 may be disposed on the first substrate 100 or the second substrate 200 by a coating process, wherein in the coating process, the sealant 300 may be formed by one-time coating, or may be formed in two, three, four or more times, and the sealant 300 in the coating head has an extrusion pressure of 300 mpa to 750 mpa and a coating speed of 40 mm/s to 120 mm/s; for example, the frame glue 300 extrusion pressure in the applicator head may be 300 megapascals, 325 megapascals, 350 megapascals, 375 megapascals, 400 megapascals, 425 megapascals, 450 megapascals, 475 megapascals, 500 megapascals, 525 megapascals, 550 megapascals, 575 megapascals, 600 megapascals, 625 megapascals, 650 megapascals, 675 megapascals, 700 megapascals, 725 megapascals, or 750 megapascals, and the coating speed may be 40 millimeters/second, 50 millimeters/second, 60 millimeters/second, 70 millimeters/second, 80 millimeters/second, 90 millimeters/second, 100 millimeters/second, 110 millimeters/second, 120 millimeters/second.
Specifically, in step B2 of the embodiment of the present application, the quantum dot solution 500 includes a quantum dot material having a content of 0.01wt% to 80wt% and a solvent having a content of 20wt% to 99.9wt%, wherein the quantum dot material includes quantum dots and ligands. Under the proportion, the dispersion degree of the quantum dot material in the solvent can be ensured, the quantum dot can be well dispersed in the solvent without agglomeration, and the quantum dot can be stably dispersed in the solvent.
Alternatively, in the quantum dot solution 500 of the embodiment of the present application, the content of the quantum dot material may be 0.01wt%, 0.05wt%, 1wt%, 5wt%, 10wt%, 15wt%, 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt%, 50wt%, 55wt%, 60wt%, 65wt%, 70wt%, 75wt% or 80wt%, and the content of the solvent may be 20wt%, 25wt%, 30wt%, 35wt%, 40wt%, 45wt%, 50wt%, 55wt%, 60wt%, 65wt%, 70wt%, 75wt%, 80wt%, 85wt%, 90wt%, 95wt%, 99.9wt%,99.95wt% or 99wt%, so that the quantum dot material is well dispersed in the solvent and does not agglomerate, so that the quantum dot material is stably dispersed in the solvent. It will be appreciated that the ratio of the quantum dot material and the solvent in the quantum dot solution 500 may be appropriately adjusted according to the actual situation and specific requirements, which is not limited herein.
Specifically, in the quantum dot material, the content of the ligand is 0.5-10wt%, namely the mass of the ligand accounts for 0.5-10wt% of the total mass of the quantum dot material, and under the proportion, the stability of the quantum dot can be ensured, and the situation of excessive ligand can be avoided.
Alternatively, in the above quantum dot material, the content of the ligand is 0.5wt%, 1wt%, 1.5wt%, 2wt%, 2.5wt%, 3wt%, 3.5wt%, 4wt%, 4.5wt%, 5wt%, 5.5wt%, 6wt%, 6.5wt%, 7wt%, 7.5wt%, 8wt%, 8.5wt%, 9wt%, 9.5wt% or 10wt%. It will be appreciated that the amount of ligand in the quantum dot material may be suitably adjusted according to the actual selection and specific requirements, and is not limited only herein.
Specifically, the quantum dot can be prepared by a thermal injection method, specifically, the precursor can be injected into a reaction liquid with the temperature of 100-500 ℃ for reaction, and then the quantum dot can be obtained by centrifugal drying. The quantum dot is composed of group IV, II-VI, IV-VI or III-V elements, specifically, the quantum dot is mainly composed of group IVA, iib-VIA, iiia-V A, IVA-VIA elements, for example, when the quantum dot includes group IVA elements, the quantum dot may include carbon quantum dot, silicon quantum dot or germanium quantum dot; when the quantum dot comprises IIB-VIA group elements, the quantum dot can specifically comprise cadmium selenide quantum dot, zinc sulfide quantum dot or cadmium sulfide quantum dot; when the quantum dot comprises group IIIA-VA elements, the quantum dot may specifically comprise indium phosphide quantum dot, gallium arsenide quantum dot or indium arsenide quantum dot; when the quantum dot comprises IVA-VIA group elements, the quantum dot can specifically comprise lead sulfide quantum dot, lead selenide quantum dot or lead telluride quantum dot, and the specific materials of the quantum dot can be modified appropriately according to the selection and specific requirements of actual situations.
Specifically, the solvent may be selected from water, alcohol compounds, ether compounds, ester compounds and alkane compounds, wherein the solvent may be ethanol, diethyl ether, ethyl acetate or n-octane, and of course, the solvent may be modified appropriately according to the actual situation and specific requirements, for example, the solvent may also be water, propylene glycol methyl ether acetate (2-acetic-1-methoxpropane, PGMEA) or other compounds, which are not limited herein.
Specifically, the ligand can prevent the quantum dots from aggregating, so that the quantum dots are uniformly dispersed in the solvent, and thus the particle size of the quantum dots is controlled at the nanometer level, in this embodiment, the ligand is selected from one or more of propylene glycol derivatives, thiothiol compounds, thiocarboxylic acid compounds and compounds containing ester groups and thiol groups, and the specific material of the ligand can be modified appropriately according to the selection and specific requirements of the actual situation, and is not limited only herein.
Specifically, the quantum dot solution 500 is prepared by the steps of: mixing the quantum dots, the ligand and the solvent, and then mechanically stirring to disperse the quantum dots and the ligand in the solvent, thereby obtaining a quantum dot solution 500; wherein the temperature of the solvent during stirring is controlled to be 10-100 ℃, the stirring rotating speed is 10-1500 rpm, and the stirring time is 1-1440 minutes.
Optionally, in the embodiment of the present application, after mixing the quantum dot, the ligand and the solvent, mechanical stirring is performed, where the temperature during stirring may be 10 degrees celsius, 20 degrees celsius, 30 degrees celsius, 45 degrees celsius, 60 degrees celsius, 70 degrees celsius, 80 degrees celsius, 90 degrees celsius or 100 degrees celsius; the rotational speed upon stirring may be 10rpm, 50rpm, 100rpm, 200rpm, 300rpm, 400rpm, 500rpm, 600rpm, 700rpm, 800rpm, 900rpm, 1000rpm, 1100rpm, 1200rpm, 1300rpm, 1400rpm or 1500 rpm. The stirring time may be 1min, 10min, 100min, 200min, 300min, 400min, 500min, 600min, 700min, 800min, 900min, 1000min, 1200min or 1440min. It will be appreciated that the specific parameters of the mechanical stirring after mixing the quantum dots, the ligand and the solvent may be appropriately adjusted according to the actual situation and specific requirements, and are not limited herein.
Specifically, in the step B13, the concentration of the quantum dot in the quantum dot solution 500 has a great influence on the efficiency of performing electrophoretic deposition on the quantum dot, and if the concentration of the quantum dot in the quantum dot solution 500 is high, the speed of performing electrophoretic deposition on the quantum dot is high, and the film thickness of the quantum dot layer 170 is difficult to control; if the concentration of the quantum dots in the quantum dot solution 500 is small, the speed of performing electrophoretic deposition of the quantum dots is slow, which certainly reduces the efficiency of performing electrophoretic deposition of the quantum dots. In order to solve the above problems, the concentration of the quantum dots in the quantum dot solution 500 is controlled to be 1 mg/ml to 350 mg/ml, so that the arrangement is beneficial to controlling the film thickness of the quantum dot layer 170, ensuring the speed of carrying out electrophoretic deposition on the quantum dots, and improving the efficiency of carrying out electrophoretic deposition on the quantum dots, so as to prepare the quantum dot layer 170 with good morphology.
Alternatively, in embodiments of the present application, the concentration of the quantum dots in the quantum dot solution 500 may be 1 mg/ml, 5 mg/ml, 10 mg/ml, 15 mg/ml, 20 mg/ml, 25 mg/ml, 50 mg/ml, 75 mg/ml, 100 mg/ml, 125 mg/ml, 150 mg/ml, 175 mg/ml, 180 mg/ml, 185 mg/ml, 190 mg/ml, 195 mg/ml, 200 mg/ml, 210 mg/ml, 220 mg/ml, 230 mg/ml, 240 mg/ml, 250 mg/ml, 260 mg/ml, 270 mg/ml, 280 mg/ml, 290 mg/ml, or 300 mg/ml, which are all capable of facilitating the electrophoretic deposition of the quantum dots to produce the quantum dot layer 170 with good morphology. It will be appreciated that the concentration of the quantum dots in the quantum dot solution 500 may be appropriately adjusted according to the actual selection and specific requirements, and is not limited herein.
Specifically, in step B3 of the embodiment of the present application, the step of bonding the first substrate 100 and the second substrate 200 together by the frame glue 300 specifically includes:
step B31, bonding the first substrate 100 and the second substrate 200 under vacuum, wherein the first substrate 100, the second substrate 200 and the frame glue 300 enclose a reaction cavity 400, and a first electrode 150, a second electrode 210 and a quantum dot solution 500 are arranged in the reaction cavity 400;
step B32, curing the frame glue 300, so that the first substrate 100 and the second substrate 200 are bonded together.
Specifically, in step B32 of the embodiment of the present application, the frame glue 300 may be cured by a heat curing manner, where the heat curing temperature is 50 to 200 degrees celsius, and the heat curing time is 0.5 to 5 hours; for example, the heat curing temperature may be 50 degrees celsius, 60 degrees celsius, 70 degrees celsius, 80 degrees celsius, 90 degrees celsius, 100 degrees celsius, 110 degrees celsius, 120 degrees celsius, 130 degrees celsius, 140 degrees celsius, 150 degrees celsius, 160 degrees celsius, 170 degrees celsius, 180 degrees celsius, 190 degrees celsius or 200 degrees celsius, and the heat curing time may be 0.5 hour, 1 hour, 1.5 hour, 2 hours, 2.5 hours, 3 hours, 3.5 hours, 4 hours, 4.5 hours or 5 hours, and the heat curing temperature and time may be appropriately adjusted according to the actual situation and specific requirements, and are not limited herein.
Specifically, in step B32 of the embodiment of the present application, the frame glue 300 may be cured by means of photo-curing, specifically, ultraviolet light may be used to cure the frame glue 300, the photo-curing time may be 30 seconds to 600 seconds, and the light accumulation amount of the frame glue 300 may be 4000 millijoules per square centimeter to 28000 millijoules per square centimeter; specifically, the time of the photo-curing may be 30 seconds, 60 seconds, 90 seconds, 120 seconds, 150 seconds, 180 seconds, 210 seconds, 240 seconds, 270 seconds, 300 seconds, 330 seconds, 360 seconds, 390 seconds, 420 seconds, 450 seconds, 480 seconds, 510 seconds, 540 seconds, 570 seconds or 600 seconds, the light volume of the frame glue 300 may be 4000 millijoules/square centimeter, 6000 millijoules/square centimeter, 8000 millijoules/square centimeter, 10000 millijoules/square centimeter, 12000 millijoules/square centimeter, 14000 millijoules/square centimeter, 16000 millijoules/square centimeter, 18000 millijoules/square centimeter, 20000 millijoules/square centimeter, 22000 millijoules/square centimeter, 24000 millijoules/square centimeter, 26000 millijoules/square centimeter or 28000 millijoules/square centimeter, and the photo-curing time and the light volume of the frame glue 300 may be appropriately adjusted according to the selection and specific requirements of the actual situation, but are not limited thereto.
Specifically, in the above step B4, by applying voltages to the first electrode 150 and the second electrode 210, the polarity of the voltage applied to the first electrode 150 is opposite to the polarity of the voltage applied to the second electrode 210, so that an electric field for electrophoretic deposition is formed between the first electrode 150 and the second electrode 210, wherein the electric field strength between the first electrode 150 and the second electrode 210 is 5×10 5 Volt/meter-4 x 10 7 Volts per meter, such that the quantum dots move in a specific direction under the influence of an electric field to the first electrode 150 and are eventually deposited on the first electrode 150.
Alternatively, in the above step B4, the electric field strength between the first electrode 150 and the second electrode 210 may be 5×10 5 Volt/meter, 1 x 10 6 Volt/meter, 5 x 10 6 Volt/meter, 1 x 10 7 Volt/meter, 2 x 10 7 Volt/meter, 3 x 10 7 Volt/meter or 4X 10 7 Volts/meter, according to the actual selection and specific requirements, between the first electrode 150 and the second electrode 210The electric field strength of (c) may be appropriately adjusted, and is not limited thereto.
Specifically, in the step B4, the temperature of the quantum dot solution 500 is controlled to be 10 to 100 degrees celsius when the electrophoretic deposition is performed, so that the electrophoretic deposition can be performed normally. Optionally, in the step B4, the temperature of the quantum dot solution 500 may be 10 degrees celsius, 15 degrees celsius, 20 degrees celsius, 25 degrees celsius, 30 degrees celsius, 35 degrees celsius, 40 degrees celsius, 45 degrees celsius, 50 degrees celsius, 55 degrees celsius, 60 degrees celsius, 65 degrees celsius, 70 degrees celsius, 75 degrees celsius, 80 degrees celsius, 85 degrees celsius, 90 degrees celsius, 95 degrees celsius or 100 degrees celsius, and the temperature of the quantum dot solution 500 may be appropriately adjusted according to the actual situation and specific requirements, which is not limited herein.
Specifically, in the above step B4, the time for performing the electrophoretic deposition is controlled to be 1 second to 3600 seconds, for example, 1 second, 10 seconds, 50 seconds, 100 seconds, 150 seconds, 200 seconds, 250 seconds, 300 seconds, 350 seconds, 400 seconds, 450 seconds, 500 seconds, 550 seconds, 600 seconds, 650 seconds, 700 seconds, 750 seconds, 800 seconds, 850 seconds, 900 seconds, 850 seconds, 1000 seconds, 1050 seconds, 1100 seconds, 1150 seconds, 1200 seconds, 1250 seconds, 1300 seconds, 1350 seconds, 1400 seconds, 1450 seconds, 1500 seconds, 1550 seconds, 1600 seconds, 1650 seconds, 1700 seconds, 1750 seconds, 1800 seconds, 1850 seconds, 1900 seconds, 1950 seconds, 2000 seconds, 2100 seconds, 2200 seconds, 2300 seconds, 2400 seconds, 2500 seconds, 2600 seconds, 2700 seconds, 2800 seconds, 2900 seconds, 3000 seconds, 3100 seconds, 3200 seconds, 3400 seconds, 3500 seconds or 3600 seconds, and the time for performing the electrophoretic deposition may not be limited to the above according to the selection and the specific requirements of the actual situation.
Specifically, by adopting the method for manufacturing the quantum dot substrate in the embodiment of the present application to manufacture the quantum dot layer 170 on the first electrode 150, the thickness of the quantum dot layer 170 can be adjusted by adjusting parameters such as the concentration of the quantum dots in the quantum dot solution 500, the electric field strength between the first electrode 150 and the second electrode 210, and the temperature of the quantum dot solution 500 during electrophoretic deposition, and the thickness of the quantum dot layer 170 is 10 nm-5 μm.
Alternatively, in the quantum dot substrate of the embodiment of the present application, the thickness of the quantum dot layer 170 may be 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950 nm, 1 micron, 1.1 micron, 1.2 micron, 1.3 micron, 1.4 micron, 1.5 micron, 1.6 micron, 1.7 micron, 1.8 micron, 1.9 micron, 2 micron, 2.1 micron, 2.2 micron, 2.3 micron, 2.4 micron, 2.5 micron, 2.6 micron, 2.7 micron, 2.8 micron, 2.9 micron, 3 micron, 3.1 micron, 3.2 micron, 3.3 micron, 3 micron, 3.5 micron, 3.6 micron, 3.7 micron, 3.8 micron, 3.9 micron, 4 micron, 4.4 micron, 4 micron, 4.5 micron, 4.6 micron, 4.5 micron, 4 micron, 4.5 micron, 4.6 micron, 4.8 micron, 4 micron, 4.5 micron, 4.6 micron, or 3 micron may be not specifically limited to these specific examples.
Specifically, as shown in fig. 1 and fig. 3, after the step B4, the method for manufacturing a quantum dot substrate according to the embodiment of the present application includes the following steps:
and B5, removing the first substrate 100, the frame glue 300 and the rest of the quantum dot solution 500, cleaning the first substrate 100 and the quantum dot layer 170, and heating and curing the quantum dot layer 170 to obtain the quantum dot substrate. After the first substrate 100, the frame glue 300 and the remaining quantum dot solution 500 are removed, undeposited and residual quantum dots still exist on the first substrate 100 and the quantum dot layer 170; when the quantum dot substrate manufactured by the embodiment of the present application is used to manufacture an electronic device (such as a light emitting diode display panel, an organic light emitting diode display panel, etc.), other layer structures need to be formed on the first substrate 100 or the quantum dot layer 170, and since the quantum dots which are not deposited and remain cannot be well attached to the quantum dot layer 170 and the surface of the first substrate 100, the layer structures formed by subsequent processing on the quantum dot substrate are easy to peel off, resulting in the defect of the electronic device, therefore, the present application cleans the first substrate 100 and the quantum dot layer 170, and then heats and cures the quantum dot layer 170, so that the quantum dot layer 170 is stably attached to the surface of the first electrode 150, and the situation that the layer structures manufactured by subsequent processing on the quantum dot substrate are easy to peel off is avoided.
Specifically, in the step B5, the cleaning process is performed on the first substrate 100 and the quantum dot layer 170 specifically as follows: the first substrate 100 and the quantum dot layer 170 are cleaned by using the solvents corresponding to the quantum dot solution 500, specifically, the first substrate 100 and the quantum dot layer 170 may be rinsed or immersed by using the solvents, so as to remove the undeposited and residual quantum dots on the first substrate 100 and the quantum dot layer 170.
Optionally, the first substrate 100 and the quantum dot layer 170 are washed with the corresponding solvent in the quantum dot solution 500 1 to 3 times, and each washing time is 1 to 60 seconds, for example, each washing time may be 1 second, 5 seconds, 10 seconds, 15 seconds, 20 seconds, 25 seconds, 30 seconds, 35 seconds, 40 seconds, 45 seconds, 50 seconds, 55 seconds, or 60 seconds; and the temperature of the solvent used in the cleaning is 10 to 90 degrees celsius, for example, the temperature of the solvent used in the cleaning may be 10 degrees celsius, 15 degrees celsius, 20 degrees celsius, 25 degrees celsius, 30 degrees celsius, 35 degrees celsius, 40 degrees celsius, 45 degrees celsius, 50 degrees celsius, 55 degrees celsius, 60 degrees celsius, 65 degrees celsius, 70 degrees celsius, 75 degrees celsius, 80 degrees celsius, 85 degrees celsius or 90 degrees celsius, so as to clean the first substrate 100 and the quantum dot layer 170 of undeposited and residual quantum dots.
Alternatively, in the above step B5, the temperature at which the quantum dot layer 170 is cured by heating is 25 to 200 degrees celsius, and specifically, but not limited to, heating may be performed by placing the first substrate 100 and the quantum dot layer 170 thereon on a heat table. In this embodiment, the temperature of the quantum dot layer 170 for heating and curing may be 25 degrees celsius, 30 degrees celsius, 35 degrees celsius, 40 degrees celsius, 45 degrees celsius, 50 degrees celsius, 55 degrees celsius, 60 degrees celsius, 65 degrees celsius, 70 degrees celsius, 75 degrees celsius, 80 degrees celsius, 85 degrees celsius, 90 degrees celsius, 95 degrees celsius, 100 degrees celsius, 105 degrees celsius, 110 degrees celsius, 115 degrees celsius, 120 degrees celsius, 125 degrees celsius, 130 degrees celsius, 135 degrees celsius, 140 degrees celsius, 145 degrees celsius, 150 degrees celsius, 155 degrees celsius, 160 degrees celsius, 165 degrees celsius, 170 degrees celsius, 175 degrees celsius, 180 degrees celsius, 185 degrees celsius, 190 degrees celsius, 195 degrees celsius, or 200 degrees celsius, and the temperature of the quantum dot layer 170 for heating and curing may be appropriately adjusted according to the actual situation and specific requirements, which is not limited herein.
Alternatively, in the above step B5, the time for heat curing the quantum dot layer 170 may be 10 seconds to 1800 seconds, for example, the time for heat curing the quantum dot layer 170 is 10 seconds, 50 seconds, 100 seconds, 150 seconds, 200 seconds, 250 seconds, 300 seconds, 350 seconds, 400 seconds, 450 seconds, 500 seconds, 550 seconds, 600 seconds, 650 seconds, 700 seconds, 750 seconds, 800 seconds, 850 seconds, 900 seconds, 950 seconds, 1000 seconds, 1050 seconds, 1100 seconds, 1150 seconds, 1200 seconds, 1250 seconds, 1300 seconds, 1350 seconds, 1400 seconds, 1450 seconds, 1500 seconds, 1550 seconds, 1600 seconds, 1650 seconds, 1700 seconds, 1750 seconds, or 1800 seconds, and the time for heat curing the quantum dot layer 170 may be appropriately adjusted according to the actual selection and specific requirements, which is not limited herein.
The embodiment of the application also provides a quantum dot substrate, which is manufactured by adopting the manufacturing method of the quantum dot substrate, and the quantum dot substrate comprises a first substrate 100, a first electrode 150 arranged on the first substrate 100 and a quantum dot layer 170 arranged on the first electrode 150. The quantum dot substrate provided in this embodiment adopts all the technical solutions of all the embodiments, so that all the beneficial effects brought by the technical solutions of the embodiments are also provided, and are not described in detail herein.
The foregoing describes in detail a method for manufacturing a quantum dot substrate and a quantum dot substrate provided by the embodiments of the present application, and specific examples are applied herein to illustrate the principles and embodiments of the present application, where the foregoing description of the embodiments is only for helping to understand the method and core ideas of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (9)
1. The manufacturing method of the quantum dot substrate is characterized by comprising the following steps of:
forming a plurality of retaining walls on a first substrate, wherein the retaining walls enclose a plurality of grooves, and a first electrode is formed on an inorganic insulating layer positioned at the bottom of the grooves to obtain a first substrate;
arranging frame glue on the first substrate or the second substrate, wherein a second electrode is arranged on one side of the second substrate;
adding a quantum dot solution with quantum dots into the inner side of the frame glue;
bonding the first substrate and the second substrate together through the frame glue, wherein the first substrate, the second substrate and the frame glue are enclosed to form a reaction cavity, and the first electrode, the second electrode and the quantum dot solution are arranged in the reaction cavity;
applying a voltage to the first electrode and the second electrode so that an electric field is formed between the first electrode and the second electrode, wherein the electric field enables the quantum dots to be deposited on the first electrode along the extending direction of the retaining wall, and therefore a quantum dot layer is formed on the first electrode;
and removing the second substrate, the frame glue and the rest of the quantum dot solution, cleaning the first substrate and the quantum dot layer, and heating and curing the quantum dot layer to obtain the quantum dot substrate.
2. The method of fabricating a quantum dot substrate according to claim 1, wherein the fabricating of the first substrate further comprises, before forming the barrier wall on the first substrate: forming a circuit layer on the first substrate;
the first electrode formed later is electrically connected to the circuit layer;
the step of applying a voltage to the first electrode comprises: and applying voltage to the first electrode through the circuit layer.
3. The method of claim 2, wherein the circuit layer includes a plurality of traces, and one or more of the first electrodes are electrically connected to the same trace.
4. The method of claim 2, wherein the circuit layer includes a scan line, a data line insulated from the scan line and intersecting the scan line, and a thin film transistor disposed at an intersection of the scan line and the data line, the scan line is electrically connected to a gate of the thin film transistor, the data line is electrically connected to a source of the thin film transistor, and the first electrode is electrically connected to a drain of the thin film transistor.
5. The method of fabricating a quantum dot substrate according to claim 1, wherein after the first electrode is formed in the recess, the fabricating step of the first substrate specifically further comprises: forming a spacer on the retaining wall;
after the first substrate and the second substrate are bonded together through the frame glue, one side, far away from the retaining wall, of the spacer is abutted against the second electrode.
6. The method according to claim 5, wherein the step of fabricating the first substrate, before forming the first electrode in the recess, specifically further comprises: forming an inorganic insulating layer at least on the retaining wall;
the spacers formed later are provided on the inorganic insulating layer.
7. The method of any one of claims 1 to 6, wherein the quantum dot solution comprises a quantum dot composition in an amount of 0.01wt% to 80wt% and a solvent in an amount of 20wt% to 99.9wt%, wherein the quantum dot composition comprises the quantum dot and a ligand.
8. The method for producing a quantum dot substrate according to any one of claims 1 to 6The method is characterized in that when a voltage is applied to the first electrode and the second electrode, the electric field strength of the first electrode and the second electrode is 5×10 5 Volt/meter-4 x 10 7 Volts/meter.
9. A quantum dot substrate manufactured by the method for manufacturing a quantum dot substrate according to any one of claims 1 to 8, wherein the quantum dot substrate comprises a first substrate, a first electrode disposed on the first substrate, and a quantum dot layer disposed on the first electrode.
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