CN113866863A - Chiral optical element and preparation method thereof - Google Patents
Chiral optical element and preparation method thereof Download PDFInfo
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- CN113866863A CN113866863A CN202111262629.XA CN202111262629A CN113866863A CN 113866863 A CN113866863 A CN 113866863A CN 202111262629 A CN202111262629 A CN 202111262629A CN 113866863 A CN113866863 A CN 113866863A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 122
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 230000004044 response Effects 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 19
- 239000010410 layer Substances 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 6
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 9
- 229910052681 coesite Inorganic materials 0.000 description 8
- 229910052906 cristobalite Inorganic materials 0.000 description 8
- 229910052682 stishovite Inorganic materials 0.000 description 8
- 229910052905 tridymite Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002983 circular dichroism Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
Abstract
The application discloses a chiral optical element and a preparation method thereof, the chiral optical element comprises: a substrate and at least one chiral superstructure disposed on the substrate; a single chiral superstructure includes at least one deck dielectric film, each layer dielectric film overlaps the setting, this application is through setting up the chiral optical element of certain structure, and change its chiral superstructure's parameter, and then realize the regulation and control to its chiral optical response wave band and intensity, simultaneously through the number of piles to at least one deck dielectric film, the setting of material and thickness, it has the dielectric film of antireflection and reflection to form the optical response wave band to chiral optical element, make and all can realize stronger circle dichromatic optical activity to the light that is in different wave bands, strengthen chiral structure's application range.
Description
Technical Field
The application relates to the technical field of optical encryption elements, in particular to a chiral optical element and a preparation method thereof.
Background
Chirality is a fundamental attribute in nature and is inseparable from our lives. Qualitatively, an object can be considered chiral as long as it is identical to its mirror image but cannot coincide with each other by rotation or translation. Optical activity, one of the most important properties of chiral materials, is the nature that chiral materials have different interaction forces with left and right circularly polarized light.
In the right-handed chiral material, right circularly polarized light is selectively reflected and left circularly polarized light is transmitted, whereas in the left-handed chiral material, the right hand is reversed. When the metamaterial has extremely strong chirality, even a negative refractive index can be presented, the negative refractive index material is also called as a chiral metamaterial, and the object can be subjected to stealth by utilizing the negative refractive index material, so that sub-wavelength resolution imaging breaking through the diffraction limit is realized, and therefore, the research on chiral structures becomes the foremost research subject in the fields of electromagnetism and optics.
In the study of the chiral structure in the prior art, the controllable range of the corresponding working wavelength and response intensity of chiral optics in the artificial microstructure is limited, the chiral optical response waveband and intensity of the artificial microstructure cannot be regulated and controlled through the limited change of parameters of the microstructure, and further the chiral superstructure parameters cannot be changed, so that the chiral structure can realize stronger circular dichroism optical activity to light in different wavebands, and the application range of the chiral superstructure is enlarged.
Therefore, it is urgently needed to design a chiral optical element to solve the problems that the chiral optical response waveband and the chiral optical response intensity cannot be regulated and controlled through the limited change of the microstructure parameters in the prior art, and further the chiral superstructure parameters cannot be changed, so that the chiral structure can realize stronger circular dichroism optical activity to light in different wavebands, and the application range of the chiral structure is enlarged.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present application provide a technical solution of a chiral optical element and a preparation method thereof, where the technical solution is as follows:
in one aspect, there is provided a chiral optical element comprising: a substrate and at least one chiral superstructure disposed on the substrate;
and each chiral superstructure comprises at least one layer of dielectric film, and the dielectric films are arranged in an overlapping manner.
Further, the chiral superstructure is in a shape of a Chinese character 'hui'.
Further, the chiral superstructure is in a right spiral zigzag shape or a left spiral zigzag shape.
Further, the distance between adjacent edges in the chiral superstructure is 50-100 nm.
Furthermore, the single-layer dielectric film of the chiral superstructure is of a spiral film line structure.
Further, the line width of the dielectric film is 10-30 nm.
Further, the outer ring size of the chevron of the chiral superstructure matches the optical response band of the chiral optical element.
Further, the material of the at least one layer of dielectric includes one or more of hafnium oxide, tantalum oxide, trititanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide, silicon, and the like.
Further, the substrate includes at least one of a quartz substrate, a silicon substrate, and a germanium substrate.
In another aspect, a method for preparing a chiral optical element is provided, which comprises the following steps:
providing a substrate;
forming a photoresist layer on the substrate;
exposing by using a photoetching plate with a chiral superstructure graph, and forming at least one preset pattern of the chiral superstructure on the substrate;
performing dielectric film deposition on one side of the substrate where the preset pattern is formed to generate at least one layer of dielectric film at the preset pattern of the substrate to obtain the at least one chiral superstructure; wherein, each dielectric film is overlapped;
and removing the residual photoresist on the substrate to obtain the chiral optical element.
The chiral optical element and the preparation method thereof have the following technical effects:
1. according to the method, the chiral superstructure in the shape of the Chinese character 'hui' is arranged, and parameters of the chiral superstructure are changed, so that the size of the chiral superstructure is in resonance matching with response wavelength, and the chiral optical response waveband and the strength of the chiral superstructure are regulated and controlled.
2. This application combines to set for the size of chirality superstructure simultaneously through the setting to the number of piles, material and the thickness of at least one deck dielectric film for form the dielectric film that has antireflection and reflection to the optical response wave band of chiral optical element, make to have stronger responsiveness to the incident circular polarized light that is in different optical response wave bands, strengthen chiral optical element's optical response characteristic.
3. The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a chiral optical element according to an embodiment of the present disclosure;
fig. 2 is a side view of a chiral optical element provided by an embodiment of the present application;
fig. 3 is a schematic structural diagram of a structure containing 9 chiral superstructures provided by an embodiment of the present application;
fig. 4 is a schematic structural diagram of a chiral superstructure in the shape of a right-handed spiral;
fig. 5 is a schematic flow chart of a method for manufacturing a chiral optical element according to an embodiment of the present disclosure;
wherein the reference numerals correspond to: 1-a substrate; 2-chiral superstructure.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that in the description created in this application, the terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention.
Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a chiral optical element according to an embodiment of the present disclosure, fig. 2 is a side view of the chiral optical element according to the embodiment of the present disclosure, and the chiral optical element is described in detail below with reference to fig. 1 and fig. 2.
The embodiment of the application provides a chiral optical element, which comprises a substrate 1 and at least one chiral superstructure 2 arranged on the substrate 1; the single chiral superstructure 2 comprises at least one dielectric film, wherein the dielectric films are arranged one above the other.
In the embodiment of the present application, at least one chiral superstructure 2 is deposited on a substrate 1 according to a certain arrangement to form a chiral optical element, and the chiral optical response band and intensity of the chiral superstructure 2 are adjusted by changing relevant parameters such as the size of the chiral superstructure 2, so that the chiral optical element is in resonance matching with different optical response wavelengths and undergoes Bragg resonance scattering, so that the chiral optical element exhibits different optical characteristics.
In a specific embodiment, as shown in fig. 3, which is a schematic structural diagram containing 9 chiral superstructures provided in this embodiment of the present invention, the 9 chiral superstructures are arranged on the substrate in a matrix form of 3 × 3 columns, it should be noted that this is a schematic structural diagram shown in only one specific embodiment, all the chiral superstructures 2 in the shape of left-spiral zigzag lines can also be shown in a matrix form, or a combination of the chiral superstructures 2 in the shape of left-spiral zigzag lines and the chiral superstructures 2 in the shape of right-spiral zigzag lines can also be shown in a matrix form of columns of 2 × 2, 4 × 4, and 5 × 5, which is not illustrated here.
In an alternative embodiment, the substrate 1 includes at least one of a quartz substrate, a silicon substrate, and a germanium substrate.
In the embodiment of the present invention, the substrate 1 includes at least one of a quartz substrate, a silicon substrate and a germanium substrate, and different substrate materials may be selected in practical cases, and it should be noted that, in the embodiment, only three types of the substrate 1 are listed, and substrates of other materials may also be used, for example, the substrate is not specifically limited herein.
In a specific embodiment, a suitable material of the substrate 1 may be selected according to a target wavelength band, for example, if an optical response wavelength band of the chiral optical element is a wavelength band belonging to visible light or a wavelength band belonging to near infrared light, the substrate 1 may be a quartz substrate exhibiting transparency in the above wavelength band; if the optical response band of the chiral optical element is a band to which infrared light belongs, the substrate 1 may be a silicon substrate and a germanium substrate that are transparent in the above-mentioned band, and here, other substrates that are transparent in the optical response band of the chiral optical element may also be used, which are not listed here.
In an alternative embodiment, the chiral superstructure 2 is in the shape of a chevron.
In an alternative embodiment, the chiral superstructure 2 is in the shape of a right-handed spiral or a left-handed spiral.
In an alternative embodiment, the single layer dielectric film of the chiral superstructure 2 is a spiral film line structure.
In the embodiment of the present application, the chiral superstructure 2 in the shape of a left-handed spiral-back pattern is shown in fig. 1, the chiral superstructure 2 in the shape of a right-handed spiral-back pattern is shown in fig. 4, and when the spiral membrane line structure is arranged clockwise, the chiral superstructure 2 in the shape of a right-handed spiral-back pattern is called; when the helical film line structure is arranged counterclockwise, the helical film line structure is called as a chiral superstructure 2 in a left-handed helical zigzag shape, and a chiral optical element of the chiral superstructure 2 is provided with the chiral superstructure 2 in a zigzag shape, so that response wavelength can be matched according to adjustment of the size of the chiral superstructure 2, and resonance can be generated.
In an alternative embodiment, the single layer dielectric film of the chiral superstructure 2 is a spiral film line structure.
In an alternative embodiment, the spacing between adjacent sides in the chiral superstructure 2 is 50-100 nm.
Further, the distance between adjacent sides in the chiral superstructure 2 may also be in the range of 50-60nm, 60-70nm, 70-80nm, 80-90nm, 90-100nm, and the like, and in the embodiment of the present application, other distance ranges may also be used, which may be determined by combining the number of turns of the spiral film line structure, the line width of the dielectric film, and different optical response bands, which is not specifically defined herein.
In an alternative embodiment, the dielectric film has a line width of 10-30 nm.
Further, the line width of the dielectric film may be in the range of 10-20nm, 20-30nm, or other spacing ranges, and may be determined by combining the number of turns of the spiral film line structure, the spacing between adjacent sides in the chiral superstructure 2, and different optical response bands, which are not specifically defined herein.
In an alternative embodiment, the outer ring dimensions of the chevron of the chiral superstructure 2 match the optical response band of the chiral optical element.
In the embodiment of the application, the outer ring size of the rectangular pattern of the chiral superstructure 2 is adjusted, so that the adjusted outer ring size of the rectangular pattern of the chiral superstructure 2 is matched with the optical response waveband of the chiral optical element, and further, the chiral optical element has stronger responsiveness to incident circularly polarized light in different optical response wavebands, and the optical response characteristic of the chiral optical element is enhanced.
In an alternative embodiment, the material of at least one dielectric film comprises one or more of hafnium oxide, tantalum oxide, trititanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide, silicon, and the like.
In the embodiment of the present application, different dielectric film materials may be selected according to a target waveband, and if an optical response waveband of the chiral optical element is a waveband to which visible light belongs or a waveband to which near-infrared light belongs, the dielectric film may be selected from one or more materials of hafnium oxide, tantalum oxide, titanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, and the like; if the optical response band of the chiral optical element is a band to which infrared light belongs, the dielectric film may be made of one or more of germanium, zinc sulfide, silicon, and the like, or may be made of other materials, which are not listed here.
It should be noted that when the pitch of the chiral material is matched with the wavelength of the incident light in the same order, Bragg resonance scattering occurs: m λ ═ Pnavgsin α, where m is usually 1, λ is the wavelength of the incident light, P is the pitch of the material, navgGiven the average refractive index of the material and the environment, α is the angle between the incident light and the material, and sin α is 1 at normal incidence, it can therefore be concluded that: the selectivity of a chiral structure to scattered and transmitted circularly polarized light depends entirely on the chirality of the chiral structure matching the light at the corresponding wavelength and is only related to the refractive index of the material and the chiral structure.
The chiral optical element is described below with reference to specific examples.
In the embodiment of the application, the chiral superstructure 2 in the shape of the Chinese character 'hui' stripe is arranged, and the size parameter of the chiral superstructure 2 is changed, so that the size of the chiral superstructure 2 is in resonance matching with the response wavelength, and meanwhile, the thickness and the material of the dielectric film are determined by combining the Maxwell equation, so that the chiral optical response waveband and the strength of the chiral superstructure are regulated and controlled, wherein the larger the optical response waveband is, the larger the number of turns of the chiral superstructure 2 in the shape of the Chinese character 'hui' stripe is increased until the size of the chiral superstructure 2 is in resonance matching with the response wavelength.
In a specific embodiment, if the incident circularly polarized light of the optical response band is a single band (for example, the wavelength of the incident circularly polarized light is 532nm) so that the chiral optical element forms a right-handed transmission enhancing element, the size of the chiral superstructure 2 can be set to 532nm in length and width so as to match the single band incident circularly polarized light, wherein the number of turns of the zigzag lines of the chiral superstructure 2, the line width of the dielectric film, and the distance between adjacent sides in the chiral superstructure 2 can be adjusted to 532nm, and the adjustment range is as described above, the thickness and the material of the dielectric film can be determined according to maxwell's equation, and specifically, the dielectric film can be a single layer of magnesium fluoride with the thickness of 96 nm. By setting the chiral optical element to be the 532nm chiral superstructure 2 and the 96nm single-layer magnesium fluoride dielectric film, the chiral optical element has better anti-reflection property to incident circularly polarized light of a single waveband, and the optical response characteristic of the chiral optical element is further enhanced.
It should be noted that: whether the chiral superstructure 2 is in a right-handed zigzag shape or a left-handed zigzag shape can be determined according to the type of incident circularly polarized light, and specifically, when the incident circularly polarized light is right circularly polarized light, the chiral superstructure 2 is in a left-handed zigzag shape; when the incident circularly polarized light is left circularly polarized light, the chiral superstructure 2 is in the shape of right spiral zigzag stripe.
In another embodiment, if the incident circularly polarized light in the optical response band is in the near infrared band (e.g., the wavelength of the incident circularly polarized light is 780-1000nm), so that the chiral optical element forms a right-handed transmission enhancement element, the length and width of the size of the chiral superstructure 2 can be set to 780-1000nm, so as to be convenient for matching with the incident circularly polarized light of the near-infrared light band, wherein, the number of turns of the rectangular-shaped stripes of the chiral superstructure 2, the line width of the dielectric film and the distance between adjacent edges in the chiral superstructure 2 can be adjusted by 780-1000nm, the adjusting range is as described in the above range, the thickness and material of the dielectric film can be determined according to maxwell's equation, specifically, the dielectric film can be a multilayer dielectric film with a thickness of 536.86nm, the side of the dielectric film close to the substrate 1 is the first layer, and so on, the thickness and the material of the multilayer dielectric film are shown in the following table:
| number of layers | Material | Thickness/ |
| 1 | Ta2O5 | 97.57 |
| 2 | SiO2 | 179.55nm |
| 3 | Ta2O5 | 31.09nm |
| 4 | SiO2 | 106.98nm |
| 5 | Ta2O5 | 121.67nm |
In the multilayer dielectric films on the upper surface, the dielectric films are overlapped, and the chiral optical element is set to be 780-1000nm chiral superstructure 2 and 536.86nm multilayer dielectric films, so that the chiral optical element has better anti-reflection property on incident circular polarized light in a near-infrared light band, and further the optical response characteristic of the chiral optical element is enhanced.
In another embodiment, if the incident circularly polarized light in the optical response band is in the near infrared band (e.g., the wavelength of the incident circularly polarized light is 780-1000nm), so that the chiral optical element forms a right-handed reflection enhancing element, the length and width of the size of the chiral superstructure 2 can be set to 780-1000nm, so as to be convenient for matching with the incident circularly polarized light of the near-infrared light band, wherein, the number of turns of the rectangular-shaped stripes of the chiral superstructure 2, the line width of the dielectric film and the distance between adjacent edges in the chiral superstructure 2 can be adjusted by 780-1000nm, the adjusting range is as described in the above range, the thickness and material of the dielectric film can be determined according to maxwell's equation, specifically, the dielectric film can be a multilayer dielectric film with a thickness of 1603.54nm, the side of the dielectric film close to the substrate 1 is the first layer, and so on, the thickness and the material of the multilayer dielectric film are shown in the following table:
| number of layers | Material | Thickness/ |
| 1 | Ta2O5 | 98.00 |
| 2 | SiO2 | 145.07 |
| 3 | Ta2O5 | 97.98 |
| 4 | SiO2 | 145.10 |
| 5 | Ta2O5 | 97.97 |
| 6 | SiO2 | 145.15 |
| 7 | Ta2O5 | 97.97 |
| 8 | SiO2 | 145.10 |
| 9 | Ta2O5 | 97.97 |
| 10 | SiO2 | 145.11 |
| 11 | Ta2O5 | 97.97 |
| 12 | SiO2 | 290.15 |
In the multilayer dielectric films on the upper surface, the dielectric films are overlapped, and the chiral optical element is set to be 780-1000nm chiral superstructure 2 and 1603.54nm multilayer dielectric films, so that the chiral optical element has better reflection characteristic on incident circular polarized light in a near-infrared light band, and further the optical response characteristic of the chiral optical element is enhanced.
In the embodiment of the present application, a method for preparing the chiral optical element is further provided, as shown in fig. 5, which is a schematic flow chart of the method for preparing the chiral optical element provided in the embodiment of the present application, including the following steps:
s1: providing a substrate 1;
in the embodiment of the present invention, the substrate 1 includes at least one of a quartz substrate, a silicon substrate and a germanium substrate, and different substrate materials may be selected in practical cases, and it should be noted that, in the embodiment, only three types of the substrate 1 are listed, and substrates of other materials may also be used, for example, the substrate is not specifically limited herein.
In a specific embodiment, a suitable material of the substrate 1 may be selected according to a target wavelength band, for example, if an optical response wavelength band of the chiral optical element is a wavelength band belonging to visible light or a wavelength band belonging to near infrared light, the substrate 1 may be a quartz substrate exhibiting transparency in the above wavelength band; if the optical response band of the chiral optical element is a band to which infrared light belongs, the substrate 1 may be a silicon substrate and a germanium substrate that are transparent in the above-mentioned band, and here, other substrates that are transparent in the optical response band of the chiral optical element may also be used, which are not listed here.
S2: forming a photoresist layer on a substrate 1;
in the embodiment of the present application, a spin coater may be used to coat a layer of electron beam photoresist on the substrate 1, thereby forming a photoresist layer.
S3: exposing by using a photoetching plate with a chiral superstructure graph to form at least one preset pattern of a chiral superstructure 2 on a substrate 1;
in the embodiment of the present application, the photolithography plate with the chiral superstructure pattern is used for exposure, wherein the exposure method may include an electron beam exposure and development technique, and the desired preset pattern is set according to a specific parameter by using the electron beam exposure and development technique, where the preset pattern includes a right spiral zigzag pattern shape or a left spiral zigzag pattern shape, and the specific set size of the preset pattern may be according to the size described in the chiral optical element, which is not described herein again.
S4: performing dielectric film deposition on one side of the substrate 1 on which the preset pattern is formed to generate at least one layer of dielectric film at the preset pattern of the substrate 1 so as to obtain at least one chiral superstructure 2; wherein, each dielectric film is overlapped;
in this embodiment, the dielectric film deposition method may include electron beam evaporation, a chemical vapor deposition method, a magnetron sputtering method, and the like, and at least one layer of dielectric film is generated at the predetermined pattern of the substrate 1, and the description of the dielectric film herein may be set with reference to the material and thickness described in the chiral optical element, which is not described herein again.
S5: and removing the residual photoresist on the substrate 1 to obtain the chiral optical element.
In the embodiment of the application, the positive photoresist stripping solution is used for removing the residual photoresist, so that the chiral optical element is obtained.
The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
In view of the above detailed description of the chiral optical element and the preparation method thereof, it can be seen that the chiral optical element and the preparation method thereof provided by the present application have the following technical effects:
1. according to the method, the chiral superstructure in the shape of the Chinese character 'hui' is arranged, and parameters of the chiral superstructure are changed, so that the size of the chiral superstructure is in resonance matching with response wavelength, and the chiral optical response waveband and the strength of the chiral superstructure are regulated and controlled.
2. This application combines to set for the size of chirality superstructure simultaneously through the setting to the number of piles, material and the thickness of at least one deck dielectric film for form the dielectric film that has antireflection and reflection to the optical response wave band of chiral optical element, make to have stronger responsiveness to the incident circular polarized light that is in different optical response wave bands, strengthen chiral optical element's optical response characteristic.
3. The method for preparing the chiral optical element is simple and easy to operate, high in success rate, low in cost and convenient to popularize.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A chiral optical element, comprising: a substrate (1) with at least one chiral superstructure (2) arranged on the substrate (1);
and each chiral superstructure (2) comprises at least one layer of dielectric film, and the dielectric films are arranged in an overlapping manner.
2. Chiral optical element according to claim 1, characterized in that the chiral superstructure (2) is in the shape of a chevron.
3. The chiral optical element according to claim 2, wherein the chiral superstructure (2) is in the shape of a right-handed spiral or a left-handed spiral.
4. Chiral optical element according to claim 2, characterized in that the spacing between adjacent sides in the chiral superstructure (2) is 50-100 nm.
5. Chiral optical element according to claim 1, characterized in that the single layer dielectric film of the chiral superstructure (2) is a spiral film line structure.
6. The chiral optical element of claim 1 or 5 wherein the dielectric film has a line width of 10-30 nm.
7. The chiral optical element according to claim 2, wherein the outer ring dimensions of the homocentric square of the chiral superstructure (2) match the optical response band of the chiral optical element.
8. The chiral optical element of claim 1 wherein the material of the at least one dielectric film comprises one or more of hafnium oxide, tantalum oxide, trititanium pentoxide, titanium dioxide, magnesium fluoride, silicon dioxide, germanium, zinc sulfide, silicon, and the like.
9. Chiral optical element according to claim 1, characterized in that the substrate (1) comprises at least one of a quartz substrate, a silicon substrate and a germanium substrate.
10. A method for the preparation of a chiral optical element according to any one of claims 1 to 9, comprising the steps of:
providing a substrate (1);
forming a photoresist layer on the substrate (1);
exposing by using a photoetching plate with a chiral superstructure graph, and forming at least one preset pattern of a chiral superstructure (2) on the substrate (1);
performing dielectric film deposition on one side of the substrate (1) on which the preset pattern is formed to generate at least one layer of dielectric film at the preset pattern of the substrate (1) so as to obtain the at least one chiral superstructure (2); wherein, each dielectric film is overlapped;
and removing the residual photoresist on the substrate (1) to obtain the chiral optical element.
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