CN113852390B - Front End Module (FEM) with integrated functionality - Google Patents
Front End Module (FEM) with integrated functionality Download PDFInfo
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- CN113852390B CN113852390B CN202110618573.0A CN202110618573A CN113852390B CN 113852390 B CN113852390 B CN 113852390B CN 202110618573 A CN202110618573 A CN 202110618573A CN 113852390 B CN113852390 B CN 113852390B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/0413—MIMO systems
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/04—Frequency selective two-port networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/401—Circuits for selecting or indicating operating mode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H2250/00—Indexing scheme relating to dual- or multi-band filters
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Abstract
The invention relates to a front-end module FEM with integrated functionality. A front-end radio frequency RF module comprising: one or more first filter circuits configured to implement a front-end function by filtering first signals communicated between the one or more first antennas and the transceiver; and one or more second filter circuits configured to implement at least a portion of additional network functions within the front-end RF module by filtering second signals communicated between one or more second antennas and the transceiver.
Description
Technical Field
The present invention relates generally to Radio Frequency (RF) systems. More particularly, the present invention relates to Front End Modules (FEMs) in RF systems.
Background
FEM is a device operable between one or more transceivers and one or more antennas of an electronic device, such as a cell phone. The FEM may include circuitry for amplifying signals, switching signals, and/or filtering signals. It may be desirable to reduce the size of the FEM so that the FEM occupies less space in the device. Furthermore, it may be desirable to reduce the number of components required in the FEM, thereby reducing the overall cost of manufacturing the FEM. The electronic device may include FEM for low frequency bands, mid/high frequency bands, and/or ultra high frequency bands. Further, the electronic device may include modules for diversity, dual Connectivity (DC), and/or Multiple Input Multiple Output (MIMO) functions.
Disclosure of Invention
One embodiment of the present invention is a front-end Radio Frequency (RF) module comprising: one or more first filter circuits and one or more first amplifier circuits configured to implement a front-end function by filtering and then amplifying or amplifying and then filtering a first signal communicated between the one or more first antennas and the transceiver; and one or more second filter circuits and one or more second amplifier circuits configured to implement at least a portion of additional network functions within the front-end RF module by filtering and then amplifying or amplifying and then filtering second signals communicated between one or more second antennas and the transceiver.
In some embodiments, the additional network function is at least one of a Multiple Input Multiple Output (MIMO) function, a diversity function, and a Dual Connectivity (DC) function.
In some embodiments, the RF module includes one or more circuits configured to change a filter circuit of the one or more first filter circuits to implement the additional network function in response to the front-end RF module operating in a particular mode in which the filter circuit is not used to implement the front-end function.
In some embodiments, a second filter circuit of the one or more second filter circuits and the filter circuit adapted to implement the additional network function are integrated onto a single integrated filter circuit die.
In some embodiments, at least two similar filter circuits of the one or more first filter circuits and the one or more second filter circuits are integrated onto a single integrated filter circuit die.
In some embodiments, a plurality of resonators of a first filter circuit of the at least two similar filter circuits and a second filter circuit of the at least two similar filter circuits are tiled to increase a resonator area to die area ratio of the single filter circuit die.
In some embodiments, the at least two similar filter circuits are filters of a predetermined frequency range, and both are receive filters or transmit filters.
In some embodiments, the first filter circuit includes a first number of stages implementing filtering of the predetermined frequency range and the second filter circuit includes a second number of stages implementing filtering of the predetermined frequency range, wherein the first number of stages is different than the second number of stages.
In some embodiments, the at least two similar filter circuits include a first filter circuit and a second filter circuit. In some embodiments, the single integrated filter circuit die includes a first input port and a first output port of the first filter circuit and a second input port and a second output port of the second filter circuit. In some embodiments, the first output port is connected to a first Low Noise Amplifier (LNA) and the second output port is connected to a second LNA. In some embodiments, the first input port is connected to a first antenna and the second input port is connected to a second antenna.
In some embodiments, the single integrated filter circuit die includes one or more common ground pads for the first filter circuit and the second filter circuit.
In some embodiments, the single integrated filter circuit die includes separate pads for each of the first input port, the first output port, the second input port, and the second output port.
Another implementation of the invention is an electronic device that includes a front-end Radio Frequency (RF) module that includes filter circuitry and amplifier circuitry configured to implement front-end functions by filtering and then amplifying or amplifying and then filtering signals communicated between one or more antennas and a transceiver. At least two of the filter circuits are integrated onto a single integrated filter circuit die of the RF module, wherein the at least two filter circuits are associated with a predetermined frequency range.
In some embodiments, the RF module of the electronic device includes one or more second filter circuits and one or more second amplifier circuits configured to implement at least a portion of additional network functions within the front-end RF module by filtering and then amplifying or amplifying and then filtering second signals communicated between one or more second antennas and the transceiver. In some embodiments, the additional network function is at least one of a Multiple Input Multiple Output (MIMO) function, a diversity function, and a Dual Connectivity (DC) function.
In some embodiments, the RF module of the electronic device includes one or more circuits configured to change a filter circuit of the plurality of filter circuits to implement the additional network function in response to the front-end RF module operating in a particular mode in which the filter circuit is not used to implement the front-end function.
In some embodiments, a second filter circuit of the one or more second filter circuits and the filter circuit adapted to implement the additional network function are integrated onto a particular single integrated filter circuit die of the RF module of the electronic device.
In some embodiments, at least two similar filter circuits of the plurality of filter circuits and the one or more second filter circuits are integrated onto a particular single integrated filter circuit die of the RF module of the electronic device. In some embodiments, one or more of the plurality of resonators of a first filter circuit of the two similar filter circuits and a second filter circuit of the two similar filter circuits are tiled to increase a resonator area to die area ratio of the particular single integrated filter circuit die. In some embodiments, the at least two similar filter circuits are both receive filters or transmit filters.
In some embodiments, the particular single integrated filter circuit die includes a first input port and a first output port of the first filter circuit and a second input port and a second output port of the second filter circuit. In some embodiments, the first output port is connected to a first Low Noise Amplifier (LNA) and the second output port is connected to a second LNA. In some embodiments, the first input port is connected to a first antenna and the second input port is connected to a second antenna.
Another implementation of the invention is a multi-chip module device including an integrated filter circuit, an integrated switch circuit, and an integrated amplifier circuit configured to implement front-end functions by filtering and then amplifying or amplifying and then filtering signals communicated between one or more first antennas and a transceiver. At least two of the filter circuits are integrated onto a single integrated filter circuit die of the device, wherein the two filter circuits are associated with a predetermined frequency range. One or more die infrastructure of the single integrated filter circuit die is shared between the at least two filter circuits.
In some embodiments, two or more of the integrated amplifier circuits are integrated onto a single integrated amplifier circuit die.
In some embodiments, two or more of the integrated switch circuits of the multi-chip module device are integrated onto a single integrated switch circuit die of the multi-chip module, and additional logic of a Mobile Industry Processor Interface (MIPI) controller of the multi-chip module is integrated onto a single integrated MIPI controller circuit die with the MIPI controller.
Drawings
Fig. 1 shows an example system including FEM and multiple-input multiple-output (MIMO) modules, where the FEM and MIMO modules are separate modules that interface between antennas and transceivers.
Fig. 2 shows an example system including a FEM that integrates the FEM and MIMO module of fig. 1 into a single FEM.
Fig. 3 shows an example system including FEM with similar filters integrated onto an integrated filter circuit die and low noise amplifiers integrated onto a single integrated amplifier circuit die.
Fig. 4 shows an example system including FEM with similar filters integrated onto an integrated filter circuit die.
Fig. 5 shows an example circuit of multiple similar filters and separate LNAs integrated onto a single integrated filter circuit die.
Fig. 6 shows an example circuit of multiple similar filters integrated onto a single integrated filter circuit die and multiple LNAs integrated onto another single integrated amplifier circuit die.
Fig. 7 shows an example circuit of a transmitter (Tx) filter and a receiver (Rx) filter integrated onto a single die.
Fig. 8 shows an example circuit of two distinct filters integrated onto a single die.
Fig. 9 shows an example circuit diagram of a resonator of a filter circuit.
Fig. 10 shows an example circuit diagram of a resonator of two filters integrated onto a single die.
Fig. 11 shows an example circuit diagram of a resonator of two filters integrated onto a single die with different numbers of stages.
Fig. 12 shows an example layout of a band 25 filter circuit die.
Fig. 13 shows an example layout of a band 8 diplexer circuit die.
Detailed Description
Referring generally to the figures, an example FEM with integrated functionality is shown. In some embodiments, the FEM may be configured to absorb the functionality of other modules, such as diversity modules, MIMO modules, and/or Dual Connectivity (DC) modules. MIMO modules may be devices of an electronic system that multiply the capacity of a radio link using multiple transmit and receive antennas to exploit multipath propagation. The diversity module may be a device of the electronic system that improves the quality of the communication link by utilizing two or more communication channels. The DC module may perform operations to facilitate dual connectivity with small cellular networks and macro cellular networks. The FEM may integrate components (e.g., filters, amplifiers, etc.) of additional network functionality (e.g., MIMO, DC, diversity) with components (e.g., filters, amplifiers, etc.) of the FEM.
In some cases, adding additional components to the FEM may result in the FEM becoming larger. To reduce the size of the FEM, in some embodiments, additional switches and LNAs may be integrated onto the FEM's silicon Integrated Circuit (IC) that already includes the switches and LNAs. Furthermore, similar filters may be combined at the die level within the FEM. The similar filters may be filters that support substantially the same frequency band and are of the same type (e.g., transmit filter, receive filter, bypass filter, etc.). Similar filter integration can add functionality (e.g., absorb MIMO, diversity, or DC functionality) to FEM with little or no increase in module size.
In some embodiments, two or more examples of filters of a FEM supporting a particular frequency range (e.g., frequency band) may be integrated onto a single die. In some embodiments, the integrated filter includes a filter of the FEM and another filter of additional network functions (e.g., MIMO, diversity, DC, etc.). This integration allows for reduced board area at the system level while increasing FEM functionality. Furthermore, integrating similar filters onto a single die results in improved area efficiency without affecting wafer yield. The number of die per wafer may be reduced as the die grows to accommodate additional filters, but this may be avoided by integration techniques.
Some FEMs include multiple filters of the same frequency band, each configured to operate to meet communication requirements of different geographic areas. For example, one filter may be suitable for wireless communications in a first geographic area, while another filter of the same frequency band may be implemented within the FEM to facilitate communications in a second geographic area. Integrating these similar filter functions onto a single die of the FEM may provide area savings and reduce the material required for the FEM.
For example, there may be two band 41 (B41) filter examples in the FEM, one for use in asian switch configurations and the other for use in north american switch configurations. If the FEM also supports MIMO operation in north america, the B41 filter example used in asian configurations may be changed to be used as a B41 filter for MIMO in north america operation, i.e., when the device containing the FEM is located in north america. Similar to operation in asia, an example of a B41 filter in north american configuration may be operated as an asian operated MIMO filter. Thus, only two filters are required instead of three.
The integrated similarity filter may be used to absorb external filters of MIMO circuitry, diversity circuitry, and/or DC circuitry into the FEM without significantly increasing the size of the FEM. Integrated MIMO circuitry, DC circuitry, and/or diversity circuitry may eliminate all external modules and create significant efficiencies. Furthermore, integrating similar filters may facilitate changing additional examples of filters (e.g., from geographic combinations) for other uses such as MIMO, diversity, or DC.
Another benefit of similar filter integration is that overall wafer yield can remain constant because the process, process flow, and mask order are unchanged. In general, the larger the integrated die, the fewer the total number of dies per wafer. However, this reduction in die yield may be mitigated by filter integration that shares ground, tiling (e.g., efficiently matching larger resonators with small resonators), eliminating redundant saw lanes and/or saw lanes, eliminating redundant exclusion zones, and/or other techniques. For example, the infrastructure of filters such as saw lanes and exclusion zones surrounds each die for assembly purposes. However, when multiple filters occupy a single die, saw lanes and exclusion zones may be shared, resulting in die area savings. Other space saving techniques, such as sharing the ground pin between filters integrated onto the die, may also be implemented.
Referring now to fig. 1, an example system 100 includes a FEM 106 and a MIMO module 102, where FEM 106 and MIMO module 102 are separate modules that interface between antennas 132-134 and transceiver 104. FEM 106 and/or MIMO module 102 may include various diplexers (duplex), triplexers, quadplexers, and the like. The system 100 may be any kind of wireless communication device. For example, the system 100 may be a cell phone, a laptop computer, a tablet computer, a wireless router, an internet of things (IoT) device, a set top box, and/or any other type of wireless communication device.
The system 100 may include one or more antennas. In fig. 1, system 100 includes MIMO antenna 132 and main antenna 134.MIMO antenna 132 and/or main antenna 134 may be isotropic antennas, dipole antennas, monopole antennas, array antennas, loop antennas, cone antennas, and/or any other type of antenna. MIMO module 102 and/or FEM 106 may be configured to perform filtering and/or amplification (shown) on received signals via MIMO antenna 132 and/or main antenna 134 and/or to perform filtering and/or amplification (not shown) on transmitted signals received from transceiver 104 via MIMO antenna 132 and/or main antenna 134.
FEM 106 may include filters 122-130 each configured to receive signals from a main antenna 134 and filter the received signals. Filters 122-130 are shown as band pass filters, but may be low pass filters, high pass filters, and/or any other type of filter. Low Noise Amplifiers (LNAs), i.e., LNAs 120-128, may be configured to amplify the filtered signals before providing the amplified signals to transceiver 104. Although only three sets of LNAs and filters are shown in FEM 106, any number of sets of LNAs and filters may be included within FEM 106 for transmitting signals and/or receiving signals.
MIMO module 102 may include filters 108-116 each configured to receive signals from MIMO antenna 132 and filter the received signals. Filters 108-116 are shown as band pass filters, but may be low pass filters, high pass filters, and/or any other type of filter. Filters 108-116 may be filters for band 25, band 34, band 39, band 42, and/or any other band or predetermined frequency range. The LNAs 110-118 may be configured to amplify the filtered signals before providing the amplified signals to the transceiver 104. Although only three sets of LNAs and filters are shown in MIMO module 102, any number of sets of LNAs and filters may be included within MIMO module 102 for transmitting signals and/or receiving signals.
Transceiver 104 may include one or more components for processing received signals and/or signals to be transmitted. Transceiver 104 may include various mixers, filters, oscillators, phase shifters, and the like. Further, transceiver 104 may include one or more analog-to-digital converters (ADCs) and/or digital-to-analog converters (DACs). The transceiver 104 may interface with another device and/or component of the system 100, such as a processing system of the system 100.
Although system 100 is shown to include MIMO module 102, the system may instead or in addition include a module that handles another network function. Although MIMO module 102 handles filtering and/or amplification of MIMO network functions, in some embodiments, system 100 may include components that implement DC network functions or diverse network functions.
Referring now to fig. 2, a system 100 is shown that includes a FEM 200 that integrates FEM 106 and MIMO module 102 into a single module. The FEM 200 includes one or more circuit die integrating filters 108-130 and/or LNAs 110-128. The switching, amplifying and/or control circuit components of MIMO module 102 and FEM 106 may be integrated together in FEM 200. Integration may maintain a high degree of isolation between transmit and/or receive MIMO and/or FEM paths.
Although FEM 200 is shown as integrating MIMO module 102 with FEM 106, FEM 200 may integrate MIMO module, diversity module, and/or DC module into FEM 200 in some embodiments. In this regard, one or more network-enabled filters and/or amplifiers may be integrated with the filters and/or amplifiers of the FEM.
In some embodiments, any filters in the main path that are not used for FEM 200 in a particular mode of operation of system 100 may be adapted to support MIMO, diversity, and/or DC functions. In some embodiments, integrating MIMO, DC, and/or diversity functionality into FEM 200 enables filter reuse. Any filters not used in the main FEM path in a particular mode of operation may be adapted to support MIMO, diversity and/or dual connectivity functions. In some embodiments, these separate filters for supporting the same frequency band may be integrated onto a single die.
Referring now to fig. 3-4, a system 100 is shown that includes a FEM 200 that integrates a similar filter onto an integrated filter circuit die and a low noise amplifier onto a single integrated amplifier circuit die. In some embodiments, LNAs 110-128 may be integrated together onto a single integrated LNA circuit die. In this regard, the amplification and/or MIMO functions of the FEM 200 (or another network function such as diversity and/or DC) may be integrated onto a single integrated amplifier circuit die.
Further, filter 108 may be integrated with filter 122 onto integrated filter circuit die 400, filter 112 may be integrated with filter 126 onto another integrated filter circuit die 402, and/or filter 116 may be integrated with filter 130 onto another integrated filter circuit die 404. In this regard, the MIMO filter (or a filter of another network function such as diversity and/or DC) may be integrated with the filter of the FEM.
In some embodiments, filters 108-116 and/or filters 122-130 are grouped and integrated onto the die based on a predetermined frequency range. The predetermined frequency range may be an RF band, such as band 25, band 34, band 39, band 41, band 42. For example, two or more filters associated with a particular frequency range of MIMO module 102 and/or FEM 106 may be integrated together onto a particular integrated filter circuit die.
In some embodiments, the switches may be integrated onto a single integrated switch circuit die. In some embodiments, components implementing MIPI controllers (e.g., additional MIPI logic and MIPI controllers) may be integrated onto a single integrated MIPI controller circuit die. In some embodiments, multiple amplifiers may be integrated onto a single integrated amplifier circuit die. The LNA on the silicon substrate may be integrated with other LNA circuits onto the silicon substrate. A switch on silicon-on-insulator (SOI) may be integrated onto a single SOI silicon die, slightly growing the die.
In some embodiments, the filters of the MIMO may be integrated with filters of similar filters of the FEM (e.g., filters supporting the same frequency band). Furthermore, based on the switching configuration of FEM 200, the filters can be modified to implement various network functions, thus reducing the overall filter count. For example, filters associated with a particular geographic region in which the system 100 is not located (e.g., filters of north american modes of operation) may be changed by one or more switches of the FEM 200 to implement MIMO, DC, and/or diversity of the system 100.
In fig. 4, only two filters are implemented on each of the integrated filter circuit dies 400-404. In some embodiments, any number of filters may be integrated onto the same integrated filter circuit die. For example, three, four, or more than four similar filters may be integrated onto the same integrated filter circuit die. For example, the filters of the FEM, the filters of the MIMO module, the filters of the DC module, and/or the filters of the diversity module may be integrated onto a single integrated filter circuit die, with each of the filters being associated with a particular frequency band.
Referring now to fig. 5, a circuit 500 is shown that includes an integrated filter circuit die 400 integrating a plurality of similar filters and separate LNAs 110 and 120. The integrated filter circuit die 400 includes two or more sets of input and output ports that are independent of each other. Furthermore, the input and output ports are not connected to the same antenna, but to separate antennas: main antenna 134 and MIMO antenna 132, respectively.
Furthermore, the output ports of the integrated filter circuit die 400 are not connected to the same LNA, but to separate LNAs, i.e., LNA 120 and LNA 110, respectively. One filter on the integrated filter circuit die 400 may be used as the master filter (e.g., filter 122) for the FEM and a different filter on the integrated filter circuit die 400 supporting the same frequency band may be used for MIMO, diversity, or DC network functions (e.g., filter 108).
Space on the die may be more efficiently used by combining similar filters onto the same integrated filter circuit die 400. For example, saw lanes occupy a proportionally smaller percentage of the area of an integrated filter circuit die that includes more integrated filters. In many cases, the filter size is dictated by the minimum spacing of the pads and vias of the integrated filter circuit die. Pad usage efficiency is improved by adding more power resonators to form another similar filter but sharing ground with another filter of the integrated filter circuit die 400.
The distance separation between the resonators and other infrastructure (e.g., ground seals, via pads, etc.) and tiled resonators (e.g., matching small and large resonators to optimize space) helps to reduce the net filter area. In the module, each filter requires a forbidden zone to allow placement of the filter during assembly. This exclusion zone and dead zone is minimized when multiple filters are integrated onto the same die.
Referring now to fig. 6, a circuit 600 of multiple similar filters integrated onto a single integrated filter circuit die 400 and multiple LNAs integrated onto an integrated amplifier circuit die 602 is shown. One input port of the integrated amplifier circuit die 602 is connected to an output port of the integrated circuit filter die 400 associated with the filter 122. The other input port of the integrated amplifier circuit die 602 is connected to the output port of the integrated filter circuit die 400 associated with the filter 108. Both output ports of the integrated amplifier circuit die 602 associated with the LNA 120 and the LNA 110 are connected to the transceiver 104.
Referring now to fig. 7, a circuit 700 of a transmitter (Tx) filter 704 and a receiver (Rx) filter 706 integrated onto a single die 702 is shown. In contrast to the integrated filter circuit die 400 illustrated in fig. 5 and 6, the integrated filter circuit die 702 integrates Tx and Rx filters, while the integrated filter circuit die 400 integrates two similar filters, two Rx filters. Furthermore, integrated filter circuit die 702 includes three ports as compared to four ports of integrated filter circuit die 400. Integrated filter circuit die 400 includes separate input and output ports for each of filters 122 and 108. In contrast, the integrated filter circuit die 702 includes separate output ports and a common input port of the Tx filter 704 and the Rx filter 706 of the integrated filter circuit die 702.
Referring now to fig. 8, a circuit 800 of two distinct filters integrated onto an integrated filter circuit die 802 is shown. The filters of the integrated filter circuit die 802 are dissimilar as compared to the integrated filter circuit die 400 that integrates two similar filters. The first filter 804 and the distinct filter 806 of the integrated filter circuit die 802 may each serve separate frequency bands. For example, the first filter 804 may serve frequency band 34, while the distinct filter 806 may serve a high frequency band, such as frequency band 39.
The distinct filters may be filters within the FEM that serve separate frequency ranges and/or serve different purposes, such as a filter for filtering the transmitted signal and a filter for filtering the received signal. Similar or analogous filters may be filters that serve the same frequency range within the FEM (e.g., pass a predetermined frequency range) or both serve the same purpose (e.g., both filter the transmit signal or both filter the receive signal).
Referring now to fig. 9, a circuit 902 of a resonator of a filter circuit 900 is shown. The circuit 902 may be a resonator-based bandpass filter. The circuit 902 includes series resonators 904-918 and parallel resonators 920-928. Resonators 904-928 may be Bulk Acoustic Wave (BAW) resonators, film bulk acoustic wave resonators (FBAR), solid state assembled resonators (SMR), and/or any other type of resonator. The circuit 902 includes an input port pad 930 and an output port pad 942. The circuit 902 includes ground pads 932-940.
Referring now to fig. 10, a circuit 1074 of resonators of two filters 1000 and 1002 integrated onto a single integrated filter circuit die is shown. Filter 1000 and filter 1002 include the same filter design and each include the same number and configuration of resonators. Resonators 1004 through 1054 may be BAW resonators, FBARs, SMRs, and/or any other type of resonator. Resonators 1004-1054 may be positioned on a surface of an integrated filter circuit die. Filter 1000 includes series resonators 1004 through 1018 and parallel resonators 1036 through 1044. Filter 1002 includes series resonators 1020 through 1034 and parallel resonators 1046 through 1054.
The circuit 1074 includes ground pads 1056-1064 shared between the two filters 1000 and 1002. Ground pads 1056-1064 may interconnect the die to a Printed Circuit Board (PCB). Further, the circuit 1074 includes pads 1066 connecting the filter 1000 to an antenna. The circuit 1074 includes a pad 1068 that connects the filter 1000 to another component (e.g., transceiver, amplifier, etc.). Further, the circuit 1074 includes pads 1070 that connect the filter 1002 to an antenna. The circuit 1074 includes a pad 1072 that connects the filter 1002 to another component (e.g., transceiver, amplifier, etc.).
Referring now to fig. 11, a circuit 1100 of resonators of two filters integrated onto a single integrated filter circuit die at different stages is shown. Circuit 1100 may implement filters 1166 and 1168, which may be similar filters, supporting filters of the same frequency range. However, filters 1166 and 1168 may be implemented in a different number of stages. Filters 1166 and 1168 may have various numbers of stages based on different numbers of stages required for MIMO filters and FEM filters.
The circuit 1100 includes resonators 1102-1146. Resonators 1102-1146 may be BAW resonators, FBARs, SMRs, and/or any other type of resonator. Filter 1166 includes series resonators 1102-1116 and parallel resonators 1130-1138. Filter 1168 includes series resonators 1118-1128 and parallel resonators 1140-1146. The filter 1166 includes a pad 1148 for connection with an antenna and a pad 1150 for connection with another component, such as a transceiver or amplifier. The filter 1168 includes a pad 1162 for connection to an antenna and a pad 1164 for connection to another component, such as a transceiver or amplifier. Filters 1166 and 1168 share ground pads 1154-1160. Filter 1166 includes a ground pad 1152.
Referring now to fig. 12, a layout of a circuit die 1200 of a band 25 receive filter is shown. Integrated circuit die 1200 is a 750 micrometers (um) x 570um die. The circuit die 1200 making up the resonator itself is about 400um by 385um. The resonator area of the circuit die 1200, the die area, is about 36%. Integrated circuit die 1200 includes an infrastructure, i.e., seal ring 1202, via 1204, landing sites 1206 surrounding via 1204, exclusion zones 1208, saw streets 1210, and metal interconnections between resonators 1210-1230. The packaging of resonators 1212 through 1230 may be efficient, but the infrastructure may take up space.
Referring now to fig. 13, an example layout of a band 8 diplexer integrated circuit die 1300 is shown. The circuit die 1300 includes a similar integrated filter. Resonators 1302-1318 of circuit die 1300 are tiled to minimize die area. The circuit die 1300 is 1130um x 1130um. The resonator area of circuit die 1300 is approximately 920um x 924um. Resonator area-die area was 67%.
In fig. 13, a plurality of mask layers are shown. Each layer comprises a material having a particular thickness (e.g., bottom electrode metal, piezoelectric layer, etc.). Thus, the unit process tools used to deposit or etch layers should handle unique thicknesses (e.g., deposition time and etch time), and although patterns and shapes may vary, the unit process tools and process flow order from start to finish is the same for layers of similar filters. Because each of the resonators of the filters has the same acoustic stack of the corresponding resonator of the similar filter, the frequency spectrum processed by both filters is the same.
Circuit design a hardware system may be implemented in many different ways and in many different combinations of hardware and software. For example, all or part of an implementation may be circuitry including an instruction processor, such as a Central Processing Unit (CPU), microcontroller, or microprocessor, or an Application Specific Integrated Circuit (ASIC), programmable logic device (PLO), or Field Programmable Gate Array (FPGA), or circuitry including discrete logic or other circuit components, including analog circuit components, digital circuit components, or both, or any combination thereof. As an example, the circuitry may include discrete interconnected hardware components and/or may be combined onto a single integrated circuit die, distributed among multiple integrated circuit dies, or implemented in a multi-chip module (MCM) of multiple integrated circuit dies in a common package.
The circuitry may further include or access instructions for execution by the circuitry. Instructions other than the transitory signals may be stored in a tangible storage medium, such as flash memory, random Access Memory (RAM), read Only Memory (ROM), erasable Programmable Read Only Memory (EPROM), or on a magnetic or optical disk, such as a Compact Disk Read Only Memory (CDROM), hard drive (HOD), or other magnetic or optical disk, or in or on another machine-readable medium. An article of manufacture, such as a computer program product, may comprise a storage medium and instructions stored in or on the medium and which, when executed by circuitry in a device, may cause the device to implement any of the processes described above or illustrated in the figures.
Implementations may be distributed as circuitry among multiple system components, such as among multiple processors and memories, optionally including multiple distributed processing systems. Parameters, databases, and other data structures may be separately stored and managed, may be incorporated into a single memory or database, may be logically and physically organized in many different ways, and may be implemented in many different ways including as a data structure such as a linked list, hash table, array, record, object, or implicit storage mechanism. The programs may be portions of a single program, such as subroutines, separate programs, distributed across several memories and processors, or implemented in many different ways, such as in a library such as a shared library, such as a Dynamic Link Library (DLL). For example, a DLL may store instructions that when executed by circuitry perform any of the processes described above or illustrated in the figures.
Various embodiments have been described explicitly. However, many other embodiments are possible.
Claims (18)
1. A front-end radio frequency module, comprising:
one or more first filter circuits and one or more first amplifier circuits configured to implement a front-end function by filtering and then amplifying or amplifying and then filtering a first signal communicated between the one or more first antennas and the transceiver; a kind of electronic device with high-pressure air-conditioning system
One or more second filter circuits and one or more second amplifier circuits configured to implement at least a portion of additional network functions within the front-end radio frequency module by filtering and then amplifying or amplifying and then filtering second signals communicated between one or more second antennas and the transceiver;
wherein at least two filter circuits of the one or more first filter circuits and the one or more second filter circuits are integrated onto a single integrated filter circuit die, wherein a plurality of resonators of a first filter circuit of the at least two filter circuits and a second filter circuit of the at least two filter circuits are tiled to increase a resonator area to die area ratio of the single integrated filter circuit die, and wherein the at least two filter circuits are filters of a predetermined frequency range and are both receive filters or transmit filters.
2. The front-end radio frequency module of claim 1, wherein the additional network function is at least one of a multiple-input multiple-output, MIMO, function, diversity function, and dual connectivity, DC, function.
3. The front-end radio frequency module of claim 1, wherein the front-end radio frequency module comprises one or more circuits configured to change a filter circuit of the one or more first filter circuits to implement the additional network function in response to the front-end radio frequency module operating in a particular mode in which the filter circuit is not used to implement the front-end function.
4. The front-end radio frequency module of claim 3, wherein a second filter circuit of the one or more second filter circuits and the filter circuit adapted to implement the additional network function are integrated onto another single integrated filter circuit die.
5. The front-end radio frequency module of claim 1, wherein the single integrated filter circuit die includes a first input port and a first output port for the first filter circuit and a second input port and a second output port for the second filter circuit.
6. The front-end radio frequency module of claim 1, wherein the first filter circuit includes a first number of stages that perform filtering of the predetermined frequency range and the second filter circuit includes a second number of stages that perform filtering of the predetermined frequency range, wherein the first number of stages is different than the second number of stages.
7. The front-end radio frequency module of claim 1, wherein the at least two filter circuits comprise a first filter circuit and a second filter circuit;
wherein the single integrated filter circuit die includes a first input port and a first output port of the first filter circuit and a second input port and a second output port of the second filter circuit;
wherein the first output port is connected to a first low noise amplifier, LNA, and the second output port is connected to a second LNA;
wherein the first input port is connected to a first antenna and the second input port is connected to a second antenna.
8. The front-end radio frequency module of claim 7, wherein the single integrated filter circuit die includes one or more common ground pads for the first filter circuit and the second filter circuit.
9. The front-end radio frequency module of claim 7, wherein the single integrated filter circuit die includes separate pads for each of the first input port, the first output port, the second input port, and the second output port.
10. An electronic device, comprising:
front-end radio frequency module, it includes:
a plurality of first filter circuits and amplifier circuits configured to implement a front-end function by filtering and then amplifying or amplifying and then filtering signals communicated between one or more antennas and a transceiver; and
a plurality of second filter circuits and amplifier circuits configured to implement at least a portion of additional network functions within the front-end radio frequency module by filtering and then amplifying or amplifying and then filtering second signals communicated between one or more second antennas and the transceiver;
wherein at least two filter circuits of the plurality of first filter circuits and the plurality of second filter circuits are integrated onto a single integrated filter circuit die of the front-end radio frequency module, wherein a plurality of resonators of a first filter circuit of the at least two filter circuits and a second filter circuit of the at least two filter circuits are tiled to increase a resonator area to die area ratio of the single integrated filter circuit die of the front-end radio frequency module of the electronic device, and wherein the at least two filter circuits are filters of a predetermined frequency range and are both receive filters or transmit filters.
11. The electronic device of claim 10, wherein the additional network function is at least one of a multiple-input multiple-output, MIMO, function, diversity function, and dual connectivity, DC, function.
12. The electronic device of claim 11, wherein the front-end radio frequency module of the electronic device includes one or more circuits configured to change filter circuits of the plurality of first filter circuits to implement the additional network function in response to the front-end radio frequency module operating in a particular mode in which the filter circuits are not used to implement the front-end function.
13. The electronic device of claim 12, wherein a second filter circuit of the plurality of second filter circuits and the filter circuit that is instead used to implement the additional network function are integrated onto a particular single integrated filter circuit die of the front-end radio frequency module of the electronic device.
14. The electronic device of claim 10, wherein the single integrated filter circuit die includes a first input port and a first output port of the first filter circuit and a second input port and a second output port of the second filter circuit;
wherein the first output port is connected to a first low noise amplifier, LNA, and the second output port is connected to a second LNA;
wherein the first input port is connected to a first antenna and the second input port is connected to a second antenna.
15. A multi-chip module device includes an integrated filter circuit, an integrated switch circuit, and an integrated amplifier circuit,
the integrated filter circuit, the integrated switch circuit, and the integrated amplifier circuit are configured to:
implementing a front-end function by filtering and then amplifying or amplifying and then filtering signals communicated between one or more first antennas and a transceiver;
wherein at least two of the integrated filter circuits are integrated onto a single integrated filter circuit die of the multi-chip module device, wherein the at least two filter circuits are associated with a predetermined frequency range;
wherein one or more die infrastructure of the single integrated filter circuit die is shared between the at least two filter circuits;
wherein two or more of the integrated switch circuits of the multi-chip module device are integrated onto a single integrated switch circuit die of the multi-chip module device;
wherein additional logic of a mobile industry processor interface, MIPI, controller of the multi-chip module device is integrated with the MIPI controller onto a single integrated MIPI controller circuit die, wherein a plurality of resonators of a first filter circuit of the at least two filter circuits and a second filter circuit of the at least two filter circuits are tiled to increase a resonator area to die area ratio of the single integrated filter circuit die.
16. The multi-chip module device of claim 15, wherein two or more of the integrated amplifier circuits are integrated onto a single integrated amplifier circuit die.
17. The multi-chip module device of claim 15, wherein the multi-chip module device includes one or more circuits configured to change filter circuits in the integrated filter circuit to implement additional network functions in response to the multi-chip module device operating in a particular mode in which the filter circuit is not used to implement the front-end function.
18. The multi-chip module device of claim 17, wherein the additional network function is at least one of a multiple-input multiple-output, MIMO, function, diversity function, and dual connectivity, DC, function.
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| US16/913,776 | 2020-06-26 | ||
| US16/913,776 US11394432B2 (en) | 2020-06-26 | 2020-06-26 | Front end module (FEM) with integrated functionality |
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| CN113852390A CN113852390A (en) | 2021-12-28 |
| CN113852390B true CN113852390B (en) | 2024-01-12 |
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Also Published As
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| US11700039B2 (en) | 2023-07-11 |
| CN113852390A (en) | 2021-12-28 |
| US11394432B2 (en) | 2022-07-19 |
| US20210409077A1 (en) | 2021-12-30 |
| DE102021116248A1 (en) | 2021-12-30 |
| US20220345182A1 (en) | 2022-10-27 |
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