CN113851923A - Laser TO packaging structure - Google Patents
Laser TO packaging structure Download PDFInfo
- Publication number
- CN113851923A CN113851923A CN202111217165.0A CN202111217165A CN113851923A CN 113851923 A CN113851923 A CN 113851923A CN 202111217165 A CN202111217165 A CN 202111217165A CN 113851923 A CN113851923 A CN 113851923A
- Authority
- CN
- China
- Prior art keywords
- laser
- tube
- phase change
- tongue
- change material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 9
- 239000012782 phase change material Substances 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 239000007790 solid phase Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 abstract 2
- 210000002105 tongue Anatomy 0.000 description 64
- 239000012071 phase Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
Abstract
The invention relates TO the technical field of laser packaging, in particular TO a laser TO packaging structure, which comprises a tube seat, a tube shell covered on the tube seat, a tube tongue arranged on the tube seat, a laser chip and a transitional heat sink, wherein the tube tongue is arranged on the tube seat; the laser chip is connected with the tube tongue through a transitional heat sink; the outer surface of the pipe tongue is provided with a phase change material layer. The phase change latent heat radiation can be carried out through the phase change material layer on the tube tongue, so that the heat radiation capability of the laser is improved; in addition, the laser chip is connected with the tube tongue through the transitional heat sink, and the transitional heat sink can eliminate the stress caused by the over-quick temperature change, so that the system is kept in a stable working state.
Description
Technical Field
The invention relates TO the technical field of laser packaging, in particular TO a laser TO packaging structure.
Background
The main problem faced by the present high-power semiconductor laser is that the temperature of the laser is too high under the condition of high-current injection, so that the degradation of the semiconductor laser is serious, and the stability and the service life of the semiconductor laser are seriously influenced. The phenomenon is caused by that the semiconductor laser is generally packaged by adopting a TO tube seat, and the traditional TO tube seat comprises a tube shell, a tube tongue and a tube pin, wherein the tube tongue is arranged on the tube shell, a chip is bonded on the tube tongue, and a sealing cap is packaged on the tube tongue. The packaging mode can only guide the heat in the laser chip TO the TO tube seat through the TO tube tongue, and the heat dissipation effect is very limited.
Disclosure of Invention
In order TO solve the above problems, the present invention provides a TO package structure of a laser, in which a tube tongue dissipates heat through latent heat of phase change, so that a system is kept in a stable working state.
In order TO achieve the purpose, the technical scheme adopted by the invention is TO provide a laser TO packaging structure which comprises a tube seat, a tube shell covered on the tube seat, a tube tongue arranged on the tube seat, a laser chip and a transitional heat sink; the laser chip is connected with the pipe tongue through the transitional heat sink; the outer surface of the pipe tongue is provided with a phase change material layer.
Preferably, the tube tongue is provided with at least one embedding hole, and the phase change material layer is embedded on the outer surface of the tube tongue through the embedding hole.
As a preferable scheme, a buried heat sink is arranged inside the pipe tongue, and the phase change material layer is connected with the buried heat sink through an embedding hole.
Preferably, the buried heat sink is one or more of graphene, aluminum and nickel.
Preferably, the phase change material layer has a multi-layer solid-solid phase change material structure.
Preferably, the phase change material layer and the transition heat sink are overlapped or staggered and nested on the outer surface of the pipe tongue.
Preferably, the phase change material layer extends toward the stem and is connected to the stem.
Preferably, the submount is one or a combination of a ceramic material and a semiconductor material.
Preferably, the light-emitting material of the laser chip is one of GaAs, InP and GaN, and the light-emitting material is one of a heterojunction, a quantum well or a superlattice structure.
As a preferable scheme, the tube housing is provided with a light outlet corresponding to the laser chip, and the light outlet is used for emitting light emitted by the laser chip.
The invention has the beneficial effects that:
the laser adopts TO encapsulation, wherein a tube tongue connected with a laser chip is covered with a phase change material layer on the surface, the tube tongue is taken as a bearing carrier at the moment, the phase change material layer and the tube tongue together become a thermal management carrier of the laser chip, and when the laser chip exceeds a set working temperature, the heat is dissipated through phase change latent heat, so that a system is kept in a stable working state; in addition, the laser chip is connected with the tube tongue through the transitional heat sink, and the transitional heat sink can eliminate the stress caused by the over-quick temperature change, so that the system is kept in a stable working state.
Drawings
Fig. 1 is a schematic cross-sectional view of a first embodiment of a laser TO package structure of the present invention.
Fig. 2 is a schematic cross-sectional view of a second embodiment of a laser TO package structure of the present invention.
Fig. 3 is a schematic cross-sectional view of a third embodiment of a laser TO package structure of the present invention.
Fig. 4 is a schematic cross-sectional view of a fourth embodiment of a laser TO package structure of the present invention.
Fig. 5 is a schematic cross-sectional view of a fifth embodiment of a laser TO package structure of the present invention.
The reference numbers illustrate: 10. 10a, 10b, 10c, 10 d-stem; 20. 20a, 20b, 20c, 20 d-shell; 21. 21a, 21b, 21c, 21 d-light outlet; 30. 30a, 30b, 30c, 30 d-tube tongues; 31. 31a, 31b, 31c, 31 d-embedding holes; 40. 40a, 40b, 40c, 40 d-laser chips; 50. 50a, 50b, 50c, 50 d-phase change material layer; 60. 60a, 60b, 60c, 60 d-submount; 70. 70a, 70b, 70c, 70 d-buried heat sinks.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring TO fig. 1, a first embodiment of a TO package structure of a laser according TO the present invention is shown, the TO package structure of a laser includes a package 10, a stem 20, a stem 30, a laser chip 40 and a submount 60; the tube shell 10 is covered on the tube seat 20 and is matched with the tube seat 20 to form an accommodating cavity; the pipe tongue 30 is arranged in the accommodating cavity and connected with the pipe seat 20; the laser chip 40 is connected with the pipe tongue 30 through a transitional heat sink 60; the outer surface of the pipe tongue 30 is provided with a phase change material layer 50.
The laser adopts TO encapsulation, wherein a tube tongue 30 connected with a laser chip 40 is covered with a phase change material layer 50 on the surface, the tube tongue 30 is taken as a bearing carrier at the moment, the phase change material layer 50 and the tube tongue 30 jointly become a heat management carrier of the laser chip 40, and when the laser chip 40 exceeds a set working temperature, the heat is dissipated through phase change latent heat, so that the system keeps a stable working state; in addition, because the laser chip 40 is connected with the tube tongue 30 through the heat sink 60, the heat sink 60 can eliminate the occurrence of stress caused by too fast temperature change, so that the system can keep a stable working state.
The position of the tube tongue 30 corresponding to the transitional heat sink 60 is provided with a buried heat sink 70, and the tube tongue 30 is provided with an embedding hole 31; the phase change material layer 50 is nested on the outer surface of the tube tongue 30 through the embedding hole 31 and is connected with the buried heat sink 70; and the phase change material layer 50 simultaneously extends toward the stem 20 and is connected to the stem 20. The phase change material layer 50 forms a unitary structure with the buried heat sink 70, the header 30 acting as the entire frame carrier, and the phase change material layer 50 extending into the header 20, thereby collectively acting as a thermal management carrier for the laser chip 40. The heat conduction between the phase change material layer 50 and the tube tongue 30 plays an important role, and when the laser chip 40 exceeds the set working temperature, the heat is dissipated through phase change latent heat, so that the system is kept in a stable working state; while the buried heat sink 70 and the submount 60 may eliminate the occurrence of stress caused by too rapid a temperature change.
In this example, phase change material should be injected into the interior of the pipe tongue 30 through the embedded holes 31, the number of the embedded holes 31 is three, the aperture size is 10 micrometers, and the embedded holes 31 may be straight holes or curved holes; the embedding holes 31 can be communicated with each other or can be sealed with each other, and are not described in detail herein.
Further, the package 10 is provided with a light exit 11 corresponding to the laser chip 40, and the light exit 11 is used for emitting light emitted by the laser chip 40.
Preferably, the phase change material layer 50 is a multi-layer solid-solid phase change material structure, and the solid-solid phase change material is one or more of inorganic phase change materials or organic phase change materials, so as to ensure that the phase change material layer 50 is always connected with the tube tongue 30 and even the tube seat 20; the buried heat sink 70 is one or more of graphene, aluminum or nickel, and the thickness of the buried heat sink is between 1 micron and 100 microns; the submount 60 is one or more of a ceramic material, such as but not limited to AlN, GaO, etc., or a semiconductor material, such as but not limited to GaAs, InP, etc., and the surface of the submount 60 has a micro-porous structure; the pipe tongue 30 is made of red copper and other high-efficiency heat dissipation materials; the light emitting material of the laser chip 40 is one of GaAs, InP, and GaN, and the light emitting material is one of a heterojunction, quantum well, or superlattice structure.
The submount 60 may be a two-layer or multi-layer structure; the phase change material layer 50 can also be a multi-layer structure, and the multi-layer phase change material layer 50 is nested in the tube tongue 30; the phase change material layer 50 is overlapped or staggered with the transition heat sink 60 and nested on the outer surface of the pipe tongue 30. In the present embodiment, the phase change material layer 50 and the submount 60 are respectively a layer, the phase change material layer 50 is fully embedded on the outer surface of the tube tongue 30, and the phase change material layer 50 and the submount 60 are arranged in a staggered manner, that is, the phase change material layer 50 covers the entire outer surface of the tube tongue 30, but an area for the connection of the submount 60 is left. Of course, the phase change material layer 50 may optionally not completely wrap the entire tube tongue 30, but may optionally be partially nested over the outer surface of the tube tongue 30.
The phase change material layer 50 extends towards the stem 20, and can cover one surface of the stem 20 facing the accommodating cavity, or can extend into the stem 20 to form a sandwich layer structure with the stem 20. In the present embodiment, the stem 20 has a cavity therein, the phase change material layer 50 extends toward and fills the cavity of the stem 20, and the phase change material layer 50 and the stem 20 form a sandwich layered structure. The number of the cavities is one or more, and when the number of the cavities is plural, the cavities are parallel and communicate with each other, so that the phase change material layer 50 and the stem 20 have a multi-layer staggered structure.
Referring TO fig. 2, a laser TO package structure according TO a first embodiment of the present invention includes a package case 10a, a package base 20a, a package tongue 30a, a laser chip 40a, a phase change material layer 50a, a transition heat sink 60a, and a buried heat sink 70 a; the tube shell 10a is covered on the tube seat 20a and is matched with the tube seat 20a to form an accommodating cavity; the pipe tongue 30a is arranged in the accommodating cavity and connected with the pipe seat 20 a; the laser chip 40a is connected with the tube tongue 30a through the transitional heat sink 60a, and the tube shell 10a is provided with a light outlet 11a corresponding to the laser chip 40 a; the buried heat sink 70a is disposed inside the tube tongue 30a and corresponds to the position of the submount 60 a; the tube tongue 30a is provided with an embedding hole 31a, and the phase change material layer 50a is embedded on the outer surface of the tube tongue 30a through the embedding hole 31a and is connected with the buried heat sink 70 a; the phase change material layer 50a and the submount 60a are disposed in a staggered manner, that is, the phase change material layer 50a covers the outer surface of the entire tube tongue 30a, but leaves an area for the connection of the submount 60 a.
The present embodiment is different from the first embodiment in that the stem 20a has no cavity therein. The phase change material layer 50a may optionally extend toward the socket 20a and cover a surface of the socket 20a connected to the tongue 30a (i.e., a surface of the socket 20a facing the receiving cavity).
Referring TO fig. 3, a laser TO package structure according TO a third embodiment of the present invention includes a package case 10b, a package base 20b, a package tongue 30b, a laser chip 40b, a phase change material layer 50b, a transition heat sink 60b, and a buried heat sink 70 b; the tube shell 10b is covered on the tube seat 20b and is matched with the tube seat 20b to form an accommodating cavity; the pipe tongue 30b is arranged in the accommodating cavity and connected with the pipe seat 20 b; the tube shell 10b is provided with a light outlet 11b corresponding to the laser chip 40 b; the laser chip 40b is connected with the transition heat sink 60b, and the buried heat sink 70b is arranged inside the tube tongue 30b and corresponds to the transition heat sink 60 b; the tube tongue 30b is provided with an embedding hole 31b, and the phase change material layer 50b is embedded on the outer surface of the tube tongue 30b through the embedding hole 31b and is connected with the buried heat sink 70 b; the phase change material layer 50b extends toward the socket 20b and covers a surface of the socket 20b connected to the tongue 30b (i.e., a surface of the socket 20b facing the receiving cavity).
The present embodiment is different from the second embodiment in that the phase change material layer 50b of the present embodiment entirely wraps the tube tongue 30 b; the laser chip 40b is connected to the phase change material layer 50b through the submount 60 b.
Referring TO fig. 4, a laser TO package structure according TO a fourth embodiment of the present invention includes a package 10c, a stem 20c, a tab 30c, a laser chip 40c, a phase change material layer 50c, a transition heat sink 60c, and a buried heat sink 70 c; the tube shell 10c is covered on the tube seat 20c and is matched with the tube seat 20c to form an accommodating cavity; the pipe tongue 30c is arranged in the accommodating cavity and connected with the pipe seat 20 c; the pipe tongue 30c is provided with an embedding hole 31c, the phase change material layer 50c is embedded on the outer surface of the pipe tongue 30c through the embedding hole 31c, and the pipe tongue 30c is completely wrapped by the phase change material layer 50 c; the laser chip 40c is connected to the phase change material layer 50c through the submount 60 c; the tube shell 10c is provided with a light outlet 11c corresponding to the laser chip 40 c; the buried heat sink 70c is disposed inside the pipe tongue 30c and corresponds to the position of the transition heat sink 60c, and the buried heat sink 70c is connected with the phase change material layer 50c through the embedding hole 31 c.
Unlike the third embodiment, the stem 20c of the present embodiment has a cavity inside, the phase change material layer 50c extends toward and fills the cavity of the stem 20c, and the phase change material layer 50c and the stem 20c form a sandwich layered structure.
Referring TO fig. 5, a laser TO package structure according TO a fifth embodiment of the present invention includes a package 10d, a socket 20d, a tab 30d, a laser chip 40d, a phase change material layer 50d, a transition heat sink 60d, and a buried heat sink 70 d; the tube shell 10d is covered on the tube seat 20d and is matched with the tube seat 20d to form an accommodating cavity; the tube tongue 30d is arranged in the accommodating cavity and connected with the tube seat 20 d; the laser chip 40d is connected with the tube tongue 30d through the transitional heat sink 60d, and the tube shell 10d is provided with a light outlet 11d corresponding to the laser chip 40 d; the tube tongue 30d is provided with an embedding hole 31d, the phase change material layer 50d is embedded on the outer surface of the tube tongue 30d through the embedding hole 31d, and the phase change material layer 50d and the transitional heat sink 60d are arranged in a staggered mode, namely the phase change material layer 50d wraps the outer surface of the whole tube tongue 30d and an area for connecting the transitional heat sink 60d is reserved; the buried heat sink 70d is disposed inside the tube tongue 30d and corresponds to the position of the transition heat sink 60d, and the buried heat sink 70d is connected with the phase change material layer 50d through the embedding hole 31 d.
Unlike the first embodiment, the stem 20d of the present embodiment has two parallel and interconnected cavities inside, the phase change material layer 50d extends toward and fills the cavity of the stem 20d, and the phase change material layer 50d and the stem 20d form a sandwich layered structure.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and not restrictive, and various changes and modifications to the technical solutions of the present invention may be made by those skilled in the art without departing from the spirit of the present invention, and the technical solutions of the present invention are intended to fall within the scope of the present invention defined by the appended claims.
Claims (10)
1. A laser TO packaging structure is characterized in that: the laser chip comprises a tube seat, a tube shell covered on the tube seat, a tube tongue arranged on the tube seat, a laser chip and a transitional heat sink; the laser chip is connected with the pipe tongue through the transitional heat sink; the outer surface of the pipe tongue is provided with a phase change material layer.
2. The laser TO package structure of claim 1, wherein: the tube tongue is provided with at least one embedding hole, and the phase change material layer is embedded on the outer surface of the tube tongue through the embedding hole.
3. The laser TO package structure of claim 2, wherein: the tube tongue is internally provided with a buried heat sink, and the phase change material layer is connected with the buried heat sink through the embedding hole.
4. The laser TO package of claim 3, wherein: the buried heat sink is compounded by one or more of graphene, aluminum or nickel.
5. The laser TO package structure of claim 1, wherein: the phase change material layer is of a multi-layer solid-solid phase change material structure.
6. The laser TO package of claim 5, wherein: the phase change material layer and the transition heat sink are overlapped or staggered and nested on the outer surface of the pipe tongue.
7. The laser TO package structure of claim 1, wherein: the phase change material layer extends towards the tube seat and is connected with the tube seat.
8. The laser TO package structure of claim 1, wherein: the transition heat sink is one or more of ceramic materials or semiconductor materials.
9. The laser TO package structure of claim 1, wherein: the light-emitting material of the laser chip is one of GaAs, InP and GaN, and the light-emitting material is one of a heterojunction structure, a quantum well structure or a superlattice structure.
10. The laser TO package structure of claim 1, wherein: the tube shell is provided with a light outlet corresponding to the laser chip, and the light outlet is used for emitting light emitted by the laser chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111217165.0A CN113851923A (en) | 2021-10-19 | 2021-10-19 | Laser TO packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111217165.0A CN113851923A (en) | 2021-10-19 | 2021-10-19 | Laser TO packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113851923A true CN113851923A (en) | 2021-12-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111217165.0A Pending CN113851923A (en) | 2021-10-19 | 2021-10-19 | Laser TO packaging structure |
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| CN (1) | CN113851923A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030086243A1 (en) * | 2001-11-06 | 2003-05-08 | Agllent Technologies, Inc. | Electronic or opto-electronic packages |
| US20110182309A1 (en) * | 2010-01-25 | 2011-07-28 | Lawrence Livermore National Security, Llc | Laser diode package with enhanced cooling |
| CN103545273A (en) * | 2013-09-30 | 2014-01-29 | 深圳市鸿富诚屏蔽材料有限公司 | Energy-storage radiating sheet and production method thereof |
| WO2020142291A1 (en) * | 2018-12-31 | 2020-07-09 | Nlight, Inc. | Integrated thermal management of fiber coupled diode laser packaging |
| CN211376630U (en) * | 2020-02-25 | 2020-08-28 | 广州市香港科大霍英东研究院 | Heat dissipation device and electronic equipment |
| CN112864791A (en) * | 2021-01-08 | 2021-05-28 | 东莞市中镓半导体科技有限公司 | Semiconductor laser of combined type TO encapsulation |
| CN113013154A (en) * | 2021-02-10 | 2021-06-22 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Integrated packaging tube shell for flat phased array antenna receiving and transmitting assembly |
| CN216529832U (en) * | 2021-10-19 | 2022-05-13 | 北京大学东莞光电研究院 | Laser TO packaging structure |
-
2021
- 2021-10-19 CN CN202111217165.0A patent/CN113851923A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030086243A1 (en) * | 2001-11-06 | 2003-05-08 | Agllent Technologies, Inc. | Electronic or opto-electronic packages |
| US20110182309A1 (en) * | 2010-01-25 | 2011-07-28 | Lawrence Livermore National Security, Llc | Laser diode package with enhanced cooling |
| CN103545273A (en) * | 2013-09-30 | 2014-01-29 | 深圳市鸿富诚屏蔽材料有限公司 | Energy-storage radiating sheet and production method thereof |
| WO2020142291A1 (en) * | 2018-12-31 | 2020-07-09 | Nlight, Inc. | Integrated thermal management of fiber coupled diode laser packaging |
| CN211376630U (en) * | 2020-02-25 | 2020-08-28 | 广州市香港科大霍英东研究院 | Heat dissipation device and electronic equipment |
| CN112864791A (en) * | 2021-01-08 | 2021-05-28 | 东莞市中镓半导体科技有限公司 | Semiconductor laser of combined type TO encapsulation |
| CN113013154A (en) * | 2021-02-10 | 2021-06-22 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Integrated packaging tube shell for flat phased array antenna receiving and transmitting assembly |
| CN216529832U (en) * | 2021-10-19 | 2022-05-13 | 北京大学东莞光电研究院 | Laser TO packaging structure |
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