CN113848559A

CN113848559A - Detection device

Info

Publication number: CN113848559A
Application number: CN202010599650.8A
Authority: CN
Inventors: 雷述宇
Original assignee: Ningbo Abax Sensing Electronic Technology Co Ltd
Current assignee: Ningbo Abax Sensing Electronic Technology Co Ltd
Priority date: 2020-06-28
Filing date: 2020-06-28
Publication date: 2021-12-28

Abstract

The application provides a detection device and relates to the technical field of detection and the field. The detection device comprises a first substrate including a first pixel part including a photoelectric conversion element, and a first modulation transfer transistor and a second modulation transfer transistor connected with the photoelectric conversion element; and a second substrate including a second pixel part corresponding to the first pixel part and spaced apart from the first substrate in a vertical direction, the second pixel including a first charge-voltage conversion element storing a first signal provided by the first modulation transfer transistor, a second charge-voltage conversion element storing a second signal provided by the second modulation transfer transistor, and a first source follower generating a first output signal, a second source follower generating a second output signal. And a first bonding conductor and a second bonding conductor arranged between the first substrate and the second substrate and electrically connecting the first pixel portion and the second pixel portion. Thereby improving the integration density and efficiency of the detection sensor.

Description

Detection device

Technical Field

The application relates to the technical field of detection, in particular to a detection device.

Background

Time of flight (TOF) is a method of finding a distance to an object by continuously transmitting light pulses to the object, receiving light returning from the object with a sensor, and detecting the Time of flight (round trip) of the light pulses.

The DTOF technology directly obtains the target distance by calculating the transmitting and receiving Time of an optical pulse, has the advantages of simple principle, good signal-to-noise ratio, high sensitivity, high accuracy and the like, receives more and more extensive attention, and can also obtain a distance detection scheme with high accuracy and high sensitivity by adopting the scheme of ITOF.

With the use of time-of-flight detection devices that have been widely used, recent advances have been made in the field of detection sensors. The detection sensor is a semiconductor device for converting an optical image into an electrical signal. As the demand for detection sensors has increased, a great deal of research has been conducted on detection sensors capable of accurately detecting distances.

Since the detection sensor generally uses a pixel array for the detection of the distance, the size of the entire device including the pixels may increase. In order to solve this problem, a method is required to reduce the size of the pixel, thereby improving the integration density and efficiency of the detection sensor.

Disclosure of Invention

An object of the present application is to provide a detection device for solving the technical problems of integration density and efficiency of the existing detection device.

In order to achieve the above purpose, the technical solutions adopted in the embodiments of the present application are as follows:

the embodiment of the application provides a detection device, includes: a first substrate including a first pixel section including a photoelectric conversion element, and a first modulation transfer transistor and a second modulation transfer transistor connected to the photoelectric conversion element;

a second substrate including a second pixel part corresponding to the first pixel part and spaced apart from the first substrate in a vertical direction, the second pixel including

A first charge-to-voltage conversion element storing a first signal provided by the first modulation transfer transistor, a second charge-to-voltage conversion element storing a second signal provided by the second modulation transfer transistor, and a first source follower generating a first output signal, a second source follower generating a second output signal. And

first and second bonding conductors arranged between the first and second substrates and electrically connecting the first and second pixel portions.

Optionally, the first bonding conductor connects the first modulation transfer transistor with the first charge-to-voltage conversion element and the second bonding conductor connects the second modulation transfer transistor with the second charge-to-voltage conversion element.

Optionally, wherein the first pixel section and the second pixel section are rectangular in horizontal cross section and overlap each other in the vertical direction.

Optionally, wherein the first bond conductor and the second bond conductor are aligned along a diagonal of a rectangle.

Optionally, a pixel array in which a plurality of pixels are arranged in rows in a first direction and in columns in a second direction, wherein each of the plurality of pixels is formed by connecting the first pixel section with the second pixel section via the first bonding conductor and the second bonding conductor.

Optionally, the modulation transfer transistor modulates the charge generated by the photoelectric element and transfers the modulated charge to the charge-to-voltage conversion element.

Optionally, an array of bonding conductors in which a plurality of bonding conductors are aligned in rows along a first direction and in columns along with the second direction.

Optionally, wherein pixels in the same row in the first direction receive the same input signal.

The beneficial effect of this application is:

the embodiment of the application provides a detection device, this detection device includes: a first substrate including a first pixel section including a photoelectric conversion element, and a first modulation transfer transistor and a second modulation transfer transistor connected to the photoelectric conversion element;

first and second bonding conductors arranged between the first and second substrates and electrically connecting the first pixel portion and the second pixel portion, achieving integration density and efficiency of the detection sensor.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.

Fig. 1 is a perspective schematic view of a detection apparatus according to an embodiment of the present disclosure;

fig. 2 is a schematic view of a first substrate of a detecting device according to an embodiment of the present disclosure;

FIG. 3 is a schematic cross-sectional view taken along line A-A of FIG. 1 according to an embodiment of the present application;

fig. 4 is a schematic diagram of a layout diagram of a pixel array according to an embodiment of the present application;

fig. 5 is an equivalent circuit schematic diagram of an exemplary pixel of a pixel array provided in an embodiment of the present application;

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

Fig. 1 is a perspective schematic view of a detection device according to an embodiment of the present disclosure. As shown in fig. 1, the detecting device includes: including a first substrate 100, a second substrate 200, and a bonding conductor 300. The first substrate 100 may be disposed on a horizontal plane. A horizontal plane may be defined by the first direction X and the second direction Y. Specifically, the first direction X and the second direction Y may be orthogonal to each other. The first direction X and the second direction Y may be directions defining a width and a length of the first substrate 100. The first substrate 100 may be disposed on a plane defined by the first direction X and the second direction Y.

The third direction Z may be a direction orthogonal to both the first direction X and the second direction Y. Therefore, the first direction X, the second direction Y, and the third direction Z may be orthogonal to each other. The third direction Z may be defined as a vertical direction if the plane defined by the first direction X and the second direction Y is a horizontal plane.

The first substrate 100 may include a first top surface 101 and a first bottom surface 102. The first top surface 101 and the first bottom surface 102 of the first substrate 100 may be surfaces of the first substrate 100 that are opposite to each other in the third direction Z.

The second substrate 200 may be spaced apart from the first substrate 100 along the third direction Z. That is, the second substrate 200 may be disposed under the first substrate 100. The second substrate 200 may correspond to the first substrate 100. Specifically, the second substrate 200 may completely overlap the first substrate 100 in the third direction Z. The first and

second substrates

100 and 200 may share the same horizontal cross section and may completely overlap each other, but the present disclosure is not limited thereto.

The second substrate 200 may include a second top surface 201 and a second bottom surface 202. The second top surface 201 and the second bottom surface 202 of the second substrate 200 may be surfaces of the second substrate 200 that are opposite to each other in the third direction Z.

The bonding conductor 300 may be disposed between the first substrate 100 and the second substrate 200. The bonding conductor 300 may be placed in contact with the first bottom surface 102 of the first substrate and the second top surface 201 of the second substrate 200. That is, the bonding conductor 300 may be disposed between the first substrate 100 and the second substrate 200 in the third direction Z.

The bonding conductor 300 may electrically connect the first substrate 100 and the second substrate 200. The bonding conductor 300 may include a conductor. The bonding conductor 300 may be a metal, but the present disclosure is not limited thereto.

A plurality of bonding conductors 300 may be provided. A plurality of bonding conductors 300 may be aligned to form an array of bonding conductors.

Fig. 2 is a schematic view of a first substrate of a detection apparatus according to an embodiment of the present disclosure. As shown in fig. 2, referring to fig. 2, the first substrate 100 may have a first pixel region RPx1 and a first peripheral region RPr 1. The first pixel region RPx1 may be a region in which pixels of the detection sensor according to some example embodiments of the present disclosure are arranged. In a plan view, the first pixel region RPx1 may be surrounded by the first peripheral region RPr 1. The first pixel region RPx1 may be a region receiving light from the outside. The first peripheral region RPr1 may surround the first pixel region RPx 1. That is, the first peripheral region RPr1 may be a peripheral region of the first pixel region RPx 1. In the first peripheral region RPr1, a circuit that processes a signal generated in the first pixel region RPx1 may be arranged. The second substrate may be the same as the first substrate and will not be described in detail here.

FIG. 3 is a schematic cross-sectional view taken along line A-A' of FIG. 1 according to an embodiment of the present application. DA is a process perforation of the first pixel part and the second pixel part, and DB is a bonding conductor connecting the first pixel part and the second pixel part, which may be a metal, and the present invention is not particularly limited.

Fig. 4 is a schematic diagram of a layout diagram of a pixel array according to an embodiment of the present disclosure. There are examples of five rows and five columns of pixels in the pixel array 10 as shown in fig. 4, but the present disclosure is not limited thereto. That is, the number of rows and columns of pixels in the pixel array 10 may vary.

The planar arrangement of the pixel array 10 may be defined within a given horizontal area, as shown in fig. 4, regardless of the division of the pixels P (i, j) into the first pixel part and the second pixel part. The pixel P (i, j) may be a rectangular shape, but the present disclosure is not limited thereto. The pixel P (i, j) may be arranged adjacent to other pixels on the side thereof.

P (i, j) may receive an input Vin and may generate an output Vout. The input Vin may be supplied to the pixel array 10 in units of rows of the pixel array 10, and the output Vout may be generated in units of columns of the pixel array 10.

Fig. 5 is an equivalent circuit schematic diagram of an exemplary pixel of a pixel array provided in an embodiment of the present application. As shown in fig. 5, the pixel P (i, j) may include a first pixel section P1, a second pixel section P2, and a pixel bonding conductor 302. The first pixel part P1 may be formed in the first pixel region Px1 of the first substrate 100. The second pixel part P2 may be formed in a second pixel region of the second substrate 200. The first and second pixel parts P1 and P2, which are elements of the pixel P (i, j), are divided between the two substrates, and as a result, the horizontal area of the pixel P (i, j) can be minimized.

The pixel bonding conductor 302 may electrically connect the first pixel part P1 and the second pixel part P2. The pixel bonding conductors 302 can include first and second pixel bonding conductors 302a and 302 b. Alternatively, two pixel bonding conductors 302 may be provided for the pixel P (i, j) because the pixel P (i, j) is a 2-tap pixel with two gratings.

If the pixel P (i, j) is a 3 or 4 tap pixel with three or four gratings, three or four pixel bonding conductors 302 may be provided for the pixel P (i, j). That is, the number of gratings provided in the pixel P (i, j) may be the same as the number 302 of pixel bonding conductors provided in the pixel P (i, j).

The first pixel part P1 may include a photoelectric element PD, a first modulation transfer element TPGA, and a modulation transfer element TPGB. The second pixel section P2 may include a first reset transistor RG1, a second reset transistor RG2, a first source follower SF1, a second source follower SF2, a first selection transistor SEL1, and/or a second selection transistor SEL 2.

The photoelectric element PD may be an element that converts light applied thereto into electric charges.

Specifically, the photoelectric element PD can sense light. The photo element PD may generate an electron-hole pair (EHP) based on the sensed light.

The first modulation transfer element TPGA is connected to the first floating diffusion region FD 1. The second modulation transfer element TPGB is connected to the second floating diffusion region FD 2.

The first floating diffusion region FD1 is connected to the first source follower S F1, the power supply voltage VDD is connected to the first source follower S F1, and the first selection transistor SEL1 is connected to the first source follower SF 1. The source voltage of the first source follower SF1 is determined by the voltage of the first floating diffusion region FD 1. The voltage of the first floating diffusion FD1 is determined by the amount of electrons transferred from the first modulation transfer element TPGA.

The row control signal is connected to a first selection transistor SEL1, the first source follower SF1 is connected to a first source selection transistor SEL1, and the output line of the pixel array 10 is connected to a first selection transistor SEL 1.

The power supply voltage VDD is connected to the first reset transistor RG1, and the first floating diffusion region FD1 is connected to the first reset transistor RG 1. When the detection of the pixel information is performed based on the voltage of the first floating diffusion FD1 and then the first reset transistor RG1 is activated by the first activation reset signal, the first reset transistor RG1 resets the voltage of the first floating diffusion FD1 to the power supply voltage VDD.

When the photo element PD senses light, the second floating diffusion FD2 is connected to the second source follower SF2, the power supply voltage VDD is connected to the second source follower SF2, and the second selection transistor SEL2 is connected to the second source follower SF 2. The source voltage of the second source follower SF2 is determined by the voltage of the second floating diffusion region FD 2. The voltage of the second floating diffusion region FD2 is determined by the amount of electrons transferred from the first modulation transfer element TPGA.

The row control signal is connected to the second selection transistor SEL2, the second source follower SF2 is connected to the selection transistor SEL2 of the second source, and the output line of the pixel array 10 is connected to the second selection transistor SEL 2.

The power supply voltage VDD is connected to the second reset transistor RG2, and the second floating diffusion region FD2 is connected to the second reset transistor RG 2. When the detection of the pixel information is performed based on the voltage of the second floating diffusion FD2 and then the second reset transistor RG2 is activated by a second one, the second reset transistor RG2 resets the voltage of the first floating diffusion FD2 to the power supply voltage VDD.

It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application. It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A probe apparatus, comprising:

a first substrate including a first pixel section including a photoelectric conversion element, and a first modulation transfer transistor and a second modulation transfer transistor connected to the photoelectric conversion element;

2. A detection device according to claim 1, characterized in that the first bonding conductor connects the first modulation transfer transistor with the first charge-voltage conversion element and the second bonding conductor connects the second modulation transfer transistor with the second charge-voltage conversion element.

3. The detection apparatus according to claim 1, wherein the first pixel section and the second pixel section are rectangular in horizontal cross section and overlap each other in the vertical direction.

4. The probe device of claim 3, wherein the first and second bonding conductors are aligned along a diagonal of a rectangle.

5. The probe apparatus of claim 1, further comprising:

a pixel array in which a plurality of pixels are arranged in rows in a first direction and in columns in a second direction, wherein each of the plurality of pixels is formed by connecting the first pixel section and the second pixel section via the first bonding conductor and the second bonding conductor.

6. The detecting device according to claim 1, wherein the modulation transfer transistor modulates and transfers the charge generated by the photoelectric element to the charge-to-voltage conversion element.

7. The probe apparatus of claim 1, further comprising:

an array of bonding conductors in which a plurality of bonding conductors are aligned in rows along a first direction and in columns along with the second direction.

8. The detection device of claim 1, wherein pixels in the same row in the first direction receive the same input signal.