CN113835189B - Terahertz focusing device with adjustable focal length and method thereof - Google Patents
Terahertz focusing device with adjustable focal length and method thereof Download PDFInfo
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- CN113835189B CN113835189B CN202111110755.3A CN202111110755A CN113835189B CN 113835189 B CN113835189 B CN 113835189B CN 202111110755 A CN202111110755 A CN 202111110755A CN 113835189 B CN113835189 B CN 113835189B
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Abstract
The invention discloses a terahertz focusing device with an adjustable focal length and a method thereof. The terahertz wave detector comprises a terahertz wave input end and an NxN multilayer unit structure square, wherein N is a natural number; the NxN multilayer unit structure squares are arranged on a plane vertical to the input direction of the terahertz wave; the multilayer unit structure comprises a metamaterial layer, a polyimide dielectric layer and a metal bottom plate; wherein, the metamaterial layer is formed by combining metal aluminum and chalcogenide. The terahertz focusing device with the adjustable focal length has the characteristics of simple structure, easiness in preparation, convenience in focal length adjustment and the like, and can meet application requirements of terahertz communication, sensing, detection and the like.
Description
Technical Field
The invention relates to the technical field of terahertz wave application, in particular to a terahertz focusing device with an adjustable focal length and a method thereof.
Background
The terahertz wave is an electromagnetic wave with the frequency of 0.1-10 THz and the wavelength of 3000-30 μm, coincides with millimeter wave in a long wave band and coincides with infrared ray in a short wave band, occupies a special position in an electromagnetic wave spectrum, has the characteristics of large bandwidth, high capacity, strong penetrating power and the like, and has wide application prospect in the fields of high-speed communication, imaging, radar and the like. In recent years, with the wide application of various terahertz systems, the requirements on various terahertz devices such as filters, switches, modulators and the like are increasing day by day. Among them, the terahertz focusing device plays an important role in terahertz imaging and detection, so it is necessary to design an adjustable focusing device. The invention designs a method for changing the focal length position of terahertz reflection focusing by changing the external environment. The device has a simple structure, is easy to process, and can realize active focal length regulation.
Disclosure of Invention
The invention provides a terahertz focusing device with an adjustable focal length, aiming at overcoming the defects of the prior art.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the terahertz focusing device with the adjustable focal length comprises a terahertz wave input end, a reflection focusing focus and NxN multilayer unit structure squares, wherein N is a natural number; the N multiplied by N multilayer unit structure squares are arranged on a plane perpendicular to the terahertz wave input direction, and each multilayer unit structure square comprises a top metal square ring structure, a first rectangular strip, a second rectangular strip, a third rectangular strip, a fourth rectangular strip, a polyimide dielectric layer and a metal plate; the metal square ring structure, the first rectangular strip, the second rectangular strip, the third rectangular strip and the fourth rectangular strip are located above the polyimide dielectric layer, and the metal plate is located below the polyimide dielectric layer.
The terahertz focusing device with the adjustable focal length is characterized in that the front view of the square of the multilayer unit structure is square, and the side length of the square is 100-110 mu m. The terahertz focusing device with the adjustable focal length is characterized in that the metal square ring structure is made of metal aluminum, the length of the outer edge is 40-42 mu m, the inner diameter is d = 20-22 mu m, and the height is 0.2-0.4 mu m. The terahertz focusing device with the adjustable focal length is characterized in that the first rectangular strip, the second rectangular strip, the third rectangular strip and the fourth rectangular strip are made of chalcogenide (GST), the sizes of the chalcogenide are 30-32 mu m in length, 16-18 mu m in width and 0.2-0.4 mu m in height. The terahertz focusing device with the adjustable focal length is characterized in that the first rectangular strip, the second rectangular strip, the third rectangular strip and the fourth rectangular strip are positioned on four sides of the metal square ring structure, are vertically connected and are centrosymmetric.
The terahertz focusing device with the adjustable focal length is formed by an NxN multi-layer unit structure, and when the external temperature is room temperature, a reflection focusing focus is positioned above the terahertz focusing device at the position of f =1000 μm; when the temperature is 100 ℃, the reflection focusing focus is positioned at the position of f =1500 μm above the terahertz focusing device; when the temperature is 400 ℃, the reflection focusing focus is positioned above the terahertz focusing device by f =2000 μm, the external temperature of the device is controlled, and the focal length is adjustable.
The terahertz focusing device with the adjustable focal length has the characteristics of simple structure, easiness in preparation, convenience in focal length adjustment and the like, and can meet application requirements of terahertz communication, sensing, detection and the like.
Drawings
FIG. 1 (a) is a three-dimensional schematic diagram of a focusing effect of a terahertz focusing device with an adjustable focal length;
fig. 1 (b) is a square three-dimensional schematic diagram of a multilayer unit structure constituting a terahertz focusing device with adjustable focal length;
FIG. 2 is a plan view of a terahertz focusing device with a square periodic arrangement of 32 × 32 multi-layered unit structures;
fig. 3 (a) is an electric field energy distribution diagram of an xy plane at a position where Z =1000 μm on the upper surface of the focal length adjustable terahertz focusing device when the external temperature is room temperature and the frequency of a vertically incident terahertz wave is 1.4 THz;
fig. 3 (b) is an xz plane energy distribution diagram with a focal length f =1000 μm at Y =0 when the external temperature is room temperature and the frequency of the vertically incident terahertz wave is 1.4 THz;
fig. 4 (a) is a diagram of an electric field energy distribution of an xy plane at a position Z =1500 μm on an upper surface of a focal length adjustable terahertz focusing device when an external temperature is room temperature and a frequency of a vertically incident terahertz wave is 1.4 THz;
fig. 4 (b) is an xz plane energy distribution diagram with a focal length f =1500 μm at Y =0 when the external temperature is room temperature and the frequency of the vertically incident terahertz wave is 1.4 THz;
fig. 5 (a) is an electric field energy distribution diagram of an xy plane at a position Z =2000 μm on the upper surface of the focal length adjustable terahertz focusing device when the external temperature is room temperature and the frequency of a vertically incident terahertz wave is 1.4 THz;
fig. 5 (b) is an xz plane energy distribution diagram with a focal length of f =2000 μm at Y =0 when the external temperature is room temperature and the frequency of the vertically incident terahertz wave is 1.4 THz;
Detailed Description
As shown in fig. 1, the terahertz focusing device with adjustable focal length is characterized by comprising a terahertz wave input end 1, a reflection focusing focus 2, N × N multilayer unit structure squares 3, wherein N is a natural number; the NxN multilayer unit structure squares 3 are arranged on a plane perpendicular to the terahertz wave input direction, and each multilayer unit structure square 3 comprises a top metal square ring structure 4, a first rectangular strip 5, a second rectangular strip 6, a third rectangular strip 7, a fourth rectangular strip 8, a polyimide dielectric layer 9 and a metal plate 10; the metal square ring structure 4, the first rectangular strip 5, the second rectangular strip 6, the third rectangular strip 7 and the fourth rectangular strip 8 are located above the polyimide dielectric layer 9, and the metal plate 10 is located below the polyimide dielectric layer 9.
The front view of the square 3 with the multi-layer unit structure is a square, and the side length of the square is 100-110 mu m. The metal square ring structure 4 is made of metal aluminum, the length of the outer edge is 40-42 μm, the inner diameter is d = 20-22 μm, and the height is 0.2-0.4 μm. The first rectangular strip 5, the second rectangular strip 6, the third rectangular strip 7 and the fourth rectangular strip 8 are made of chalcogenide (GST), and have the dimensions of 30-32 mu m in length, 16-18 mu m in width and 0.2-0.4 mu m in height. The first rectangular strip 5, the second rectangular strip 6, the third rectangular strip 7 and the fourth rectangular strip 8 are positioned on four sides of the metal square ring structure 2 and are vertically connected with each other, and the centers of the first rectangular strip, the second rectangular strip, the third rectangular strip and the fourth rectangular strip are symmetrical.
According to the method for the terahertz focusing device with the adjustable focal length, the terahertz focusing device with the adjustable focal length is composed of N multiplied by N multilayer unit structures 3, and when the external temperature is room temperature, a reflection focusing focus 2 is located above the terahertz focusing device, wherein f =1000 μm; when the temperature is 100 ℃, the reflection focusing focal point 2 is positioned above the terahertz focusing device at the position of f =1500 μm; when the temperature is 400 ℃, the reflecting focusing focus 2 is positioned above the terahertz focusing device by f =2000 μm, the external temperature of the device is controlled, and the focal length is adjustable.
Example 1
Adjustable terahertz of focus focuses on device:
fig. 1 (a) shows a focusing effect schematic diagram of the terahertz focusing device with adjustable focal length, and fig. 1 (b) shows a square three-dimensional schematic diagram of a multilayer unit structure constituting the terahertz focusing device with adjustable focal length. The square of the multi-layered cell structure has a front view of a square with a side of 100 μm. The number of the selected unit structures N =32, and 32 × 32 multilayer unit structure squares are periodically arranged. The top metal square ring structure of the square of the multi-layer unit structure has the outer side length of 40 μm, the inner diameter of d =20 μm and the height of 0.2 μm. The dimensions of the first, second, third and fourth rectangular bars are 30 μm long, 16 μm wide and 0.2 μm high. When 1.4THz terahertz waves are vertically incident to the terahertz focusing device with the adjustable focal length, the terahertz waves are reflected to form point focusing. When the external temperature of the terahertz focusing device with the adjustable focal length is at room temperature, terahertz waves with the frequency of 1.4THz vertically enter the terahertz focusing device with the adjustable focal length to form a reflection focal point which is 1000 micrometers away from the upper surface of the terahertz focusing device with the adjustable focal length, namely the focal length is f =1000 micrometers; when the external temperature of the terahertz focusing device with the adjustable focal length is 100 ℃, the terahertz waves with the frequency of 1.4THz vertically enter the terahertz focusing device with the adjustable focal length to form a reflection focal point which is 1500 mu m away from the upper surface of the terahertz focusing device with the adjustable focal length, namely the focal length is f =1500 mu m; when the external temperature of the terahertz focusing device with the adjustable focal length is 400 ℃, the terahertz waves with the frequency of 1.4THz vertically enter the terahertz focusing device with the adjustable focal length to form a reflection focal point which is 2000 mu m away from the upper surface of the terahertz focusing device with the adjustable focal length, namely the focal length is f =2000 mu m.
In order to prove the focusing function of the invention, a square focus adjustable terahertz focusing device with a periodically arranged 32 × 32 multi-layer unit structure is designed as shown in fig. 2. And obtaining the change of the reflection focal length of the terahertz wave with the frequency of 1.4THz vertically incident to the adjustable-focal-length terahertz focusing device at different temperatures by using simulation software. Fig. 3 shows a two-dimensional electric field diagram of the terahertz focusing device with adjustable focal length when the external temperature is room temperature and the frequency of vertically incident terahertz waves is 1.4 THz. Wherein fig. 3 (a) shows an electric field energy distribution diagram of an xy plane at Z =1000 μm perpendicular to the upper surface of the focal length adjustable terahertz focusing device, the focal point can be clearly seen; fig. 3 (b) shows the xz plane energy distribution plot at Y =0, from which it is clear that the focal length is f =1000 μm. Fig. 4 shows a two-dimensional electric field diagram of the focal length adjustable terahertz focusing device when the external temperature is 100 ℃ and the frequency of the vertically incident terahertz waves is 1.4 THz. Wherein fig. 4 (a) shows an electric field energy distribution diagram of an xy plane at Z =1500 μm perpendicular to the upper surface of the focal length adjustable terahertz focusing device, the focal point can be clearly seen; fig. 4 (b) shows the xz plane energy distribution plot at Y =0, from which it is clear that the focal length is f =1500 μm. Fig. 5 shows a two-dimensional electric field diagram of the focal length adjustable terahertz focusing device when the external temperature is 400 ℃ and the frequency of the vertically incident terahertz waves is 1.4 THz. Wherein fig. 5 (a) shows an electric field energy distribution diagram of an xy plane at Z =2000 μm perpendicular to the upper surface of the focal length adjustable terahertz focusing device, the focal point can be clearly seen; fig. 5 (b) shows the xz plane energy distribution plot at Y =0, from which it is clear that the focal length is f =2000 μm.
As can be seen from the electric field simulation results of the three diagrams of fig. 3 to 5, the focal length of the terahertz wave focusing device with adjustable focal length for reflecting and focusing incident terahertz waves can be well adjusted at 3 different temperatures.
Claims (5)
1. A terahertz focusing device with an adjustable focal length is characterized by comprising a terahertz wave input end (1), a reflection focusing focus (2), N multiplied by N multilayer unit structure squares (3), wherein N is a natural number; the multilayer unit structure square (3) is arranged on a plane perpendicular to the terahertz wave input direction, and the multilayer unit structure square (3) comprises a top metal square ring structure (4), a first rectangular strip (5), a second rectangular strip (6), a third rectangular strip (7), a fourth rectangular strip (8), a polyimide dielectric layer (9) and a metal plate (10); the first rectangular strip (5), the second rectangular strip (6), the third rectangular strip (7) and the fourth rectangular strip (8) are positioned on four sides of the metal square ring structure (4) and are vertically connected, the centers of the four sides of the metal square ring structure are symmetrical, the whole metal square ring structure is positioned above the polyimide dielectric layer (9), and the metal plate (10) is positioned below the polyimide dielectric layer (9).
2. The adjustable-focal-length terahertz focusing device as claimed in claim 1, characterized in that the front view of the square (3) of the multi-layered unit structure is a square, and the side length of the square is 100-110 μm.
3. The terahertz focusing device with adjustable focal length as claimed in claim 1, characterized in that the metal square ring structure (4) is a hollow circular ring inside, the material is metal aluminum, the length of the outer edge is 40-42 μm, the inner diameter is d = 20-22 μm, and the height is 0.2-0.4 μm.
4. The terahertz focusing device with adjustable focal length as claimed in claim 1, wherein the first rectangular strip (5), the second rectangular strip (6), the third rectangular strip (7) and the fourth rectangular strip (8) are made of chalcogenide (GST) with the dimensions of 30-32 μm in length, 16-18 μm in width and 0.2-0.4 μm in height.
5. A method of using the device of claim 1, wherein the terahertz focusing device with adjustable focal length is composed of N × N multi-layer unit structure squares (3), and when the external temperature is room temperature, the reflection focusing focal point (2) is located f =1000 μm above the terahertz focusing device; when the temperature is 100 ℃, the reflection focusing focus (2) is positioned above the terahertz focusing device at the f =1500 μm position; when the temperature is 400 ℃, the reflecting focusing focus (2) is positioned above the terahertz focusing device by f =2000 μm, the external temperature of the device is controlled, and the focal length is adjustable.
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