CN113824906B - Image sensing device - Google Patents
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- CN113824906B CN113824906B CN202110199912.6A CN202110199912A CN113824906B CN 113824906 B CN113824906 B CN 113824906B CN 202110199912 A CN202110199912 A CN 202110199912A CN 113824906 B CN113824906 B CN 113824906B
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- 101100473190 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) RPN1 gene Proteins 0.000 description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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Abstract
An image sensing apparatus is provided. An image sensing apparatus includes: a first subpixel array in which a plurality of unit pixels having a first color are disposed adjacent to each other; a second sub-pixel array in which a plurality of unit pixels having a second color are arranged adjacent to the first sub-pixel array in the first direction; a third sub-pixel array in which a plurality of unit pixels having a third color are arranged adjacent to the second sub-pixel array in a second direction perpendicular to the first direction; and a fourth sub-pixel array in which a plurality of unit pixels having a second color are arranged adjacent to the first sub-pixel array and the second sub-pixel array in the second direction, wherein the fourth sub-pixel array includes a plurality of phase detection pixels for detecting a phase difference in at least the first direction.
Description
Technical Field
The technology and implementations disclosed in this patent document relate generally to image sensing devices.
Background
Image sensors are used in electronic devices to convert optical images into electrical signals. Recent developments in the automotive, medical, computer, and communication industries have led to an increased demand for high-integration, high-performance image sensors in various electronic devices such as digital cameras, camcorders, personal Communication Systems (PCS), video game consoles, surveillance cameras, medical micro-cameras, and robots.
Disclosure of Invention
Various embodiments of the disclosed technology relate to an image sensing device including phase detection pixels arranged in a layout capable of improving the operation characteristics of the phase detection pixels.
In one embodiment of the disclosed technology, an image sensing device may include a first sub-pixel array including a plurality of first unit pixels including a first photosensitive element and a first color filter over the first photosensitive element, the first photosensitive elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light; a second subpixel array including a plurality of second unit pixels including a second photosensitive element and a second color filter over the second photosensitive element, the second photosensitive elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light; a third sub-pixel array including a plurality of third unit pixels including a third light sensing element and a third color filter over the third light sensing element, the third light sensing elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light; and a fourth sub-pixel array including a plurality of fourth unit pixels including a fourth photosensitive element and a fourth color filter over the fourth photosensitive element, the fourth photosensitive elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light. The second sub-pixel array is arranged adjacent to the first sub-pixel array in a first direction, the third sub-pixel array is arranged adjacent to the second sub-pixel array in a second direction perpendicular to the first direction, the fourth sub-pixel array is arranged adjacent to the first sub-pixel array and the second sub-pixel array in the second direction, and the fourth sub-pixel array further includes a plurality of phase detection pixels for detecting a phase difference.
In another embodiment of the disclosed technology, an image sensing apparatus may include: a pixel array including a plurality of unit pixels configured to generate an electrical signal by performing photoelectric conversion of incident light, and arranged adjacently in a first direction and a second direction perpendicular to the first direction. The pixel array may include: a first unit pixel array including unit pixels having first to third color filters arranged in a first color pattern; and a second unit pixel array including unit pixels having first to third color filters arranged in a second color pattern. In this case, the unit pixels of the first unit pixel array may be image pixels configured to detect incident light from the target object to generate an image signal representing the target object by converting an optical image of the target object into an electrical signal. The second unit pixel array may include: an image pixel configured to generate an image signal; and a phase detection pixel configured to detect a phase difference between optical signals from the target object.
It is to be understood that both the foregoing general description and the following detailed description of the disclosed technology are exemplary and explanatory and are intended to provide further explanation of the disclosure as claimed.
Drawings
Fig. 1 is a block diagram illustrating an example of an image sensing device based on some implementations of the disclosed technology.
Fig. 2 is a schematic diagram illustrating an example of the pixel array shown in fig. 1, based on some implementations of the disclosed technology.
Fig. 3 is a schematic diagram illustrating an example pixel array in which one of the blue pixels in a quad color filter array is used as a phase detection pixel, in accordance with some implementations of the disclosed technology.
Fig. 4 is a schematic diagram illustrating an example of the pixel array shown in fig. 1, based on some other implementations of the disclosed technology.
Detailed Description
This patent document provides implementations and examples of an image sensing apparatus including phase detection pixels and imaging pixels arranged to improve the operation characteristics of the phase detection pixels.
Reference will now be made in detail to the specific embodiments, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. In the following description, detailed descriptions of related known configurations or functions incorporated herein will be omitted to avoid obscuring the subject matter.
Fig. 1 is a block diagram illustrating an example of an image sensing device based on some implementations of the disclosed technology.
In some implementations, the image sensing device may include a pixel array 100, a Correlated Double Sampler (CDS) 200, an analog-to-digital converter (ADC) 300, a buffer 400, a row driver 500, a timing generator 600, a control register 700, and a ramp signal generator 800.
The pixel array 100 may include a plurality of unit pixels adjacently arranged in a two-dimensional (2D) array. The plurality of unit pixels may be configured to convert incident light into an electrical signal corresponding to the intensity and wavelength of the incident light by performing photoelectric conversion of the incident light. For example, the plurality of unit pixels may include a plurality of photosensitive elements. Each photosensitive element is configured to generate photo-charges by performing photoelectric conversion of incident light, and may include a photodiode in an implementation. The plurality of unit pixels may include a plurality of image pixels and a plurality of phase detection pixels. Each of the plurality of image pixels may generate an image signal corresponding to the target object by capturing and converting a portion of an optical image of the target object into an electrical signal. Each of the plurality of phase detection pixels may generate a phase signal, which is an electrical signal for calculating a phase difference between captured images of the target object. The pixel array 100 may include: a plurality of first unit pixel arrays 110 including image pixels arranged in a quad array (e.g., a quad color filter array); and a plurality of second unit pixel arrays 120 including image pixels arranged together with the phase detection pixels. For example, the first unit pixel array 110 may include four sub-pixel arrays 112, 114, 116, and 118 arranged adjacent (or adjacent) to each other while having color filters of the same color thereon. The sub-pixel arrays 112, 114, 116, and 118 may be arranged in a bayer pattern. The second unit pixel array 120 may include sub-pixel arrays 122 and 124, a sub-pixel array 126, and a sub-pixel array 128. In some implementations, each of the sub-pixel arrays 122 and 124 may include four unit pixels arranged adjacent (or adjacent) to each other while having color filters of the same color thereon. The sub-pixel array 126 may include two unit pixels disposed adjacent to (or adjacent to) each other while having color filters of the same color thereon. The sub-pixel array 128 may include six unit pixels arranged adjacent to each other (or adjacent to each other) while having color filters of the same color thereon. In this case, the sub-pixel array 128 may include two phase detection pixels adjacent to each other (or adjacent) in the row direction to detect a phase difference in the row direction, or may include four phase detection pixels arranged adjacent to each other (or adjacent) in the row direction and the column direction to detect both a phase difference in the row direction and a phase difference in the column direction. The detailed structures of the first unit pixel array 110 and the second unit pixel array 120 will be described hereinafter with reference to the accompanying drawings. For example, fig. 1 illustrates the positions of the first unit pixel array 110 and the second unit pixel array 120 in the pixel array 100, and it should be noted that the positions of the first unit pixel array 110 and the second unit pixel array 120 may be different from those shown in the drawings. In addition, the number of the second unit pixel arrays 120 may vary according to a desired function of the image sensing device.
CMOS image sensors may use Correlated Double Sampling (CDS) to remove unwanted pixel offset values by sampling the pixel signal twice to remove the difference between the two samples. In one example, correlated Double Sampling (CDS) may remove an undesired pixel offset value by comparing pixel output voltages obtained before and after an optical signal is incident on a pixel, so that only the incident light-based pixel output voltage can be measured. In some implementations of the disclosed technology, correlated Double Sampler (CDS) 200 may sample and hold the voltage level of an image signal received from an image pixel of pixel array 100 and the voltage level of a phase signal received from a phase detection pixel of pixel array 100. For example, the Correlated Double Sampler (CDS) 200 may sample a voltage level of an image signal received from the pixel array 100, a voltage level of a phase signal received from the pixel array 100, and a reference voltage level in response to a clock signal received from the timing generator 600 to provide analog signals corresponding to differences between the voltage level of each of the phase signal and the image signal and the reference voltage level to the analog-to-digital converter (ADC) 300.
The analog-to-digital converter (ADC) 300 may convert an analog signal received from the Correlated Double Sampler (CDS) 200 into a digital signal in response to a clock signal received from the timing generator 600 and a ramp signal received from the ramp signal generator 800.
The buffer 400 may latch the digital signal received from the analog-to-digital converter (ADC) 300 to amplify the digital signal and output the amplified digital signal.
The row driver 500 may activate a selected row of the pixel array 100 in response to an output signal of the timing generator 600.
The timing generator 600 may generate timing signals to control the row driver 500, the Correlated Double Sampler (CDS) 200, the analog-to-digital converter (ADC) 300, and the ramp signal generator 800.
The control register 700 may generate control signals to control the ramp signal generator 800, the timing generator 600, and the buffer 400.
The ramp signal generator 800 may generate a ramp signal to control a signal output to the buffer 400 in response to a control signal of the control register 700 and a timing signal received from the timing generator 600.
Fig. 2 is a schematic diagram illustrating an example of the pixel array 100 shown in fig. 1 including phase detection pixels arranged in accordance with some implementations of the disclosed technology.
In some implementations, the pixel array 100 may include a plurality of first unit pixel arrays 110 and a plurality of second unit pixel arrays 120.
Each of the plurality of first unit pixel arrays 110 may include four sub-pixel arrays 112, 114, 116, and 118. Each of the four sub-pixel arrays 112, 114, 116, and 118 may include four unit pixels of the same color arranged in a (2×2) array. The sub-pixel arrays 112, 114, 116, and 118 may be arranged in a bayer pattern.
For example, the sub-pixel array 112 may include four unit pixels (i.e., four red pixels) having red color filters arranged in a (2×2) array. The sub-pixel array 114 may be disposed adjacent (or neighboring) the sub-pixel array 112 in a first direction (i.e., a row direction), and may include four unit pixels (i.e., four green pixels) having green color filters disposed in a (2×2) array. The sub-pixel array 116 may be disposed adjacent (or neighboring) the sub-pixel array 114 in a second direction (i.e., a column direction) perpendicular to the first direction, and may include four unit pixels (i.e., four blue pixels) having blue color filters disposed in a (2×2) array. The sub-pixel array 118 may be disposed adjacent (or neighboring) the sub-pixel array 112 in the second direction, and may include four unit pixels (i.e., four green pixels) having green color filters disposed in a (2×2) structure.
The unit pixels arranged in the first unit pixel array 110 may be implemented as image pixels for generating an image signal.
Each of the plurality of second unit pixel arrays 120 may include sub-pixel arrays 122 and 124, a sub-pixel array 126, and a sub-pixel array 128. Each of the sub-pixel arrays 122 and 124 may include four unit pixels of the same color arranged in a (2×2) array. The sub-pixel array 126 may include two unit pixels disposed adjacent to each other (or adjacent to each other) in the second direction while having the same color. The sub-pixel array 128 may include six unit pixels adjacent to each other (or adjacent) while having the same color in a (3×2) structure.
For example, the sub-pixel array 122 may include four unit pixels (i.e., four red pixels) having red color filters arranged in a (2×2) array. The sub-pixel array 124 may be disposed adjacent (or neighboring) the sub-pixel array 122 in the first direction, and may include four unit pixels (i.e., four green pixels) having green color filters disposed in a (2×2) array. The sub-pixel array 126 may be disposed adjacent (or neighboring) the sub-pixel array 124 in the second direction, and may include two unit pixels (i.e., two blue pixels) having blue color filters disposed in a (1×2) array. The sub-pixel array 128 may be disposed adjacent (or neighboring) the sub-pixel array 122 and the sub-pixel array 124 in the second direction, and may include six unit pixels (i.e., six green pixels) having green color filters disposed in a (3×2) array.
The unit pixels arranged in the sub-pixel arrays 122, 124, and 126 may be implemented as image pixels for generating an image signal. The subpixel array 128 may include an image pixel, a pair of phase detection pixels LPD and RPD. In an example case, the sub-pixel array 128 may include defective pixels DPX.
For example, the sub-pixel array 122 of the second unit pixel array 120 may include image pixels arranged in the same manner as the image pixels in the sub-pixel array 112 of the first unit pixel array 110, and the sub-pixel array 124 of the second unit pixel array 120 may include image pixels arranged in the same manner as the image pixels in the sub-pixel array 114 of the first unit pixel array 110. In some implementations, in the second unit pixel array 120, the sub-pixel array 122 having the red color filter and the sub-pixel array 124 having the green color filter and adjacent (or neighboring) the sub-pixel array 122 in the first direction may include image pixels arranged in the same manner as the image pixels in the sub-pixel arrays 112 and 114 of the first unit pixel array 110. Unlike the sub-pixel array 116 of the first unit pixel array 110, the sub-pixel array 126 having the blue color filter may include only two unit pixels. In contrast, the sub-pixel array 128 may include six unit pixels with green color filters. In the sub-pixel array 128, two unit pixels arranged adjacently in the first direction (i.e., the row direction) while being adjacent (or neighboring) to the sub-pixel array 126 may be used as a pair of phase detection pixels LPD and RPD for detecting a phase difference in the row direction. In addition, the unit pixel DPX adjacent (or neighboring) to the phase detection pixel RPD in the second direction within the sub-pixel array 128 may be treated as a pixel having a defect. In other words, the unit pixel DPX located immediately below the phase detection pixel RPD in the column direction may be formed as a color filter having the same color as the phase detection pixel RPD, and may be treated as a defective pixel without serving as a phase detection pixel or an image pixel.
One microlens ML1 may be formed over each image pixel. One microlens ML1 may also be formed above the defective pixel DPX. A microlens ML2 covering both the phase detection pixels LPD and RPD may be formed above the phase detection pixels LPD and RPD.
Although fig. 2 illustrates that a pair of phase detection pixels LPD and RPD are disposed at an upper portion of the sub-pixel array 128 and a defective pixel DPX is disposed at a lower portion of the sub-pixel array 128, it should be noted that the positions of the phase detection pixels LPD and RPD and the defective pixel DPX may be interchanged. For example, a pair of phase detection pixels LPD and RPD may be disposed at a lower portion of the sub-pixel array 128, and a defective pixel DPX may be disposed at an upper portion of the sub-pixel array 128.
In some implementations, the unit pixel DPX located below the phase detection pixel RPD has a color filter of the same color as the phase detection pixel RPD, and is treated as a defective pixel, as will be discussed in more detail below.
In the case where the phase detection pixels LPD and RPD for detecting the phase difference in the row direction are formed in the pixel array 100 having a quad array (e.g., quad bayer color filter array) arranged in a bayer pattern, the phase detection pixels LPD and RPD may be formed using one green unit pixel and one blue unit pixel arranged adjacent (or adjacent) to each other in the row direction. In this case, since the phase detection pixels LPD and RPD should have the same condition, the phase detection pixels LPD and RPD are formed in the same color. Therefore, as shown in fig. 3, a unit pixel serving as the phase detection pixel RPD among four blue unit pixels may be implemented as a green unit pixel.
However, when the color filters are arranged as shown in fig. 3, pixels having the same color are arranged in a curved pattern. In this case, the color filter may be abnormally formed at the curved region. In this case, the operation characteristics of the image sensing apparatus may be degraded.
Accordingly, in some implementations of the disclosed technology as shown in fig. 2, the unit pixel DPX located immediately below the phase detection pixel RPD may be formed as a color filter having the same color as the phase detection pixel RPD, and in this way the color filter can be normally formed. In contrast, the color filters of the unit pixels DPX are formed to have different color filters to solve the above-described problems in the manufacturing process. Therefore, when the unit pixel DPX is processed like a normal pixel, an image signal corresponding to green may be distorted in signal processing of the second unit pixel array 120. Therefore, in signal processing such as a Dead Pixel Compensation (DPC) process, the unit pixel DPX may be processed as a defective pixel.
Fig. 4 is a schematic diagram illustrating an example of the pixel array 100 shown in fig. 1 including phase detection pixels arranged in accordance with some implementations of the disclosed technology.
In some implementations, the pixel array 100 may include a first unit pixel array 110 and a third unit pixel array 130.
Each of the first unit pixel arrays 110 may include four sub-pixel arrays 112, 114, 116, and 118. Each of the four sub-pixel arrays 112, 114, 116, and 118 may include four unit pixels of the same color arranged in a (2×2) array. The sub-pixel arrays 112, 114, 116, and 118 may be arranged in a bayer pattern.
The first unit pixel array 110 shown in fig. 4 is the same as the first unit pixel array 110 shown in fig. 2, and a detailed description thereof will be omitted herein for convenience of description.
Each of the third unit pixel arrays 130 may include sub-pixel arrays 132 and 134, a sub-pixel array 136, and a sub-pixel array 138. Each of the sub-pixel arrays 132 and 134 may include four unit pixels of the same color arranged in a (2×2) array. The sub-pixel array 136 may include two unit pixels of the same color arranged adjacent to each other (or adjacent to each other). The sub-pixel array 138 may include six unit pixels of the same color arranged adjacent to each other (or adjacent) in a (3×2) array.
The third unit pixel array 130 shown in fig. 4 may be different from the second unit pixel array 120 shown in fig. 2 in terms of the sub-pixel array 138 including the phase detection pixels. For example, the sub-pixel array 138 may include four phase detection pixels LPD1, LPD2, RPD1, and RPD2 arranged in a (2×2) array.
In the case where the phase detection pixels LPD1, LPD2, RPD1, and RPD2 are arranged in a (2×2) structure, the two left phase detection pixels LPD1 and LPD2 may be treated as a single phase detection pixel LPD, and the two right phase detection pixels RPD1 and RPD2 may be treated as a single phase detection pixel RPD, so that a phase difference in the row direction can be detected. For example, the phase signals of the phase detection pixels LPD1 and LPD2 are combined and used as a single left phase signal, and the phase signals of the phase detection pixels RPD1 and RPD2 are combined and used as a single right phase signal, so that a phase difference in the row direction can be detected. Further, the phase difference in the row direction and the phase difference in the column direction can be detected. For example, the phase signals of the phase detection pixels LPD1 and RPD1 are combined and used as a single upper phase signal, and the phase signals of the phase detection pixels LPD2 and RPD2 are combined and used as a single lower phase signal, so that a phase difference in the column direction can be detected.
The phase detection pixels LPD1, LPD2, RPD1, and RPD2 may be disposed adjacent or adjacent to the sub-pixel array 136. One microlens ML3 covering all of the phase detection pixels LPD1, LPD2, RPD1, and RPD2 may be formed above the phase detection pixels LPD1, LPD2, RPD1, and RPD 2.
By way of example, the phase detection pixels may be formed in a pixel array including four unit pixels of the same color adjacent to each other or adjacent in the (2×2) array as discussed above. In another implementation, in a pixel array including unit pixels of the same color adjacent to or adjacent to each other in an (l×l) array (where L is a natural number greater than 2), the phase detection pixels and the color filters may be formed as a color filter pattern that prevents a curvature from being generated in a formation region of the phase detection pixels.
As is apparent from the above description, an image sensing apparatus including phase detection pixels based on some implementations of the disclosed technology can improve the operation characteristics of the phase detection pixels.
Cross Reference to Related Applications
This patent document claims priority and benefit of korean patent application No. 10-2020-007447 filed on 18 th month 6 in 2020, which is incorporated herein by reference in its entirety as part of the disclosure of this patent document.
Claims (18)
1. An image sensing apparatus, the image sensing apparatus comprising:
A first subpixel array including a plurality of first unit pixels including a first photosensitive element and a first color filter over the first photosensitive element, the first photosensitive elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light;
A second subpixel array including a plurality of second unit pixels including a second photosensitive element and a second color filter over the second photosensitive element, the second photosensitive elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light;
a third sub-pixel array including a third light sensing element and a third color filter over the third light sensing element, the third light sensing elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light; and
A fourth sub-pixel array including a fourth light sensing element and a fourth color filter over the fourth light sensing element, the fourth light sensing elements being positioned adjacent to each other and configured to generate photo-charges by converting incident light,
Wherein the second sub-pixel array is arranged adjacent to the first sub-pixel array in a first direction,
Wherein the third sub-pixel array is arranged adjacent to the second sub-pixel array in a second direction perpendicular to the first direction,
Wherein the fourth sub-pixel array is arranged adjacent to the first sub-pixel array and the second sub-pixel array in the second direction,
Wherein the fourth sub-pixel array further includes a plurality of phase detection pixels for detecting a phase difference and a first pixel positioned adjacent to one of the plurality of phase detection pixels in the second direction, and
Wherein the first pixel is treated as a defective pixel.
2. The image sensing device of claim 1, wherein the plurality of phase detection pixels in the fourth sub-pixel array comprises:
a first phase detection pixel and a second phase detection pixel arranged adjacent to each other in the first direction.
3. The image sensing device of claim 2, wherein,
The second phase detection pixel is located on a first side of the first phase detection pixel and is disposed adjacent to the third sub-pixel array.
4. The image sensing device of claim 2, wherein,
The first phase detection pixel is positioned adjacent to the first sub-pixel array in the second direction, and
The second phase detection pixel is positioned adjacent to the second sub-pixel array in the second direction.
5. The image sensing device of claim 2, wherein the first pixel is positioned adjacent to the second phase detection pixel in the second direction.
6. The image sensing device of claim 1, wherein,
Each of the first sub-pixel array and the second sub-pixel array includes a plurality of unit pixels arranged in a (2×2) array.
7. The image sensing device of claim 6, wherein the fourth sub-pixel array comprises:
a plurality of unit pixels arranged in a (3×2) array in which three unit pixels are arranged in the first direction and two unit pixels are arranged in the second direction.
8. The image sensing device of claim 1, wherein,
The first, second and third color filters are red, green and blue color filters, respectively, and the fourth color filter is a green color filter.
9. An image sensing apparatus, the image sensing apparatus comprising:
A pixel array including a plurality of unit pixels configured to generate an electric signal by performing photoelectric conversion of incident light and arranged adjacently in a first direction and a second direction perpendicular to the first direction,
Wherein the pixel array includes:
a first unit pixel array including unit pixels having first, second, and third color filters arranged in a first color pattern; and
A second unit pixel array including unit pixels having first, second, and third color filters arranged in a second color pattern,
Wherein the unit pixels of the first unit pixel array are image pixels configured to detect incident light from a target object to generate an image signal representing the target object by converting an optical image of the target object into an electrical signal, and
Wherein the second unit pixel array includes:
An image pixel configured to generate the image signal;
a phase detection pixel configured to detect a phase difference between optical signals from the target object; and
A first pixel positioned adjacent to one of the phase detection pixels, and
Wherein the first pixel is treated as a defective pixel.
10. The image sensing device of claim 9, wherein the first unit pixel array comprises:
A first sub-pixel array including M unit pixels having the first color filters arranged adjacent to each other;
a second sub-pixel array including M unit pixels having the second color filter, disposed adjacent to the first sub-pixel array in the first direction;
A third sub-pixel array including M unit pixels having the third color filter, disposed adjacent to the second sub-pixel array in the second direction; and
A fourth sub-pixel array including M unit pixels having the second color filters disposed adjacent to the first sub-pixel array in the second direction.
11. The image sensing device of claim 10, wherein the second unit pixel array comprises:
A fifth sub-pixel array including M unit pixels having the first color filters arranged adjacent to each other;
a sixth sub-pixel array including M unit pixels having the second color filter, disposed adjacent to the fifth sub-pixel array in the first direction;
a seventh sub-pixel array including (M-N) unit pixels having the third color filter, disposed adjacent to the sixth sub-pixel array in the second direction; and
An eighth sub-pixel array configured to have the phase detection pixel and the first pixel, in which (m+n) unit pixels having the second color filter are disposed adjacent to the fifth sub-pixel array and the sixth sub-pixel array in the second direction.
12. The image sensing device of claim 11, wherein the phase detection pixel comprises:
a first phase detection pixel and a second phase detection pixel arranged adjacent to each other in the first direction.
13. The image sensing device of claim 12, wherein,
The second phase detection pixel is located on a first side of the first phase detection pixel and is disposed adjacent to the seventh sub-pixel array.
14. The image sensing device of claim 12, wherein the first pixel is positioned adjacent to the second phase detection pixel in the second direction.
15. The image sensing device of claim 11, wherein each of the phase detection pixels comprises:
First to fourth phase detection pixels arranged in a (2×2) array in which the first to fourth phase detection pixels are arranged adjacent to each other in the first and second directions.
16. The image sensing device of claim 11, wherein each of the fifth and sixth sub-pixel arrays comprises a plurality of unit pixels arranged in a (2 x 2) array.
17. The image sensing device according to claim 16, wherein the eighth sub-pixel array includes a plurality of unit pixels arranged in a (3 x 2) array in which three unit pixels are arranged in the first direction and two unit pixels are arranged in the second direction.
18. The image sensing device of claim 9, wherein,
The first, second and third color filters are red, green and blue color filters, respectively.
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| KR1020200074147A KR20210156493A (en) | 2020-06-18 | 2020-06-18 | Image sensing device |
| KR10-2020-0074147 | 2020-06-18 |
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| KR20220118022A (en) * | 2021-02-18 | 2022-08-25 | 에스케이하이닉스 주식회사 | Image sensing device |
| JP2023059696A (en) * | 2021-10-15 | 2023-04-27 | キヤノン株式会社 | Imaging apparatus and control method thereof |
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| TW202201770A (en) | 2022-01-01 |
| US11363222B2 (en) | 2022-06-14 |
| KR20210156493A (en) | 2021-12-27 |
| CN113824906A (en) | 2021-12-21 |
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