CN113810007B - Surface acoustic wave resonator, filter, and radio frequency front-end device - Google Patents

Surface acoustic wave resonator, filter, and radio frequency front-end device Download PDF

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Publication number
CN113810007B
CN113810007B CN202111054657.2A CN202111054657A CN113810007B CN 113810007 B CN113810007 B CN 113810007B CN 202111054657 A CN202111054657 A CN 202111054657A CN 113810007 B CN113810007 B CN 113810007B
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layer
acoustic wave
piezoelectric
reflective
concave
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CN113810007A (en
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韩兴
周建
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Changzhou Chengxin Semiconductor Co Ltd
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Changzhou Chengxin Semiconductor Co Ltd
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Priority to PCT/CN2022/116062 priority patent/WO2023036024A1/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H03H9/02653—Grooves or arrays buried in the substrate
    • H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

The embodiment of the invention provides a surface acoustic wave resonance device, a filter device and a radio frequency front-end device. The surface acoustic wave resonator device includes: a support layer; the piezoelectric layer is positioned above the supporting layer and comprises a first side and a second side opposite to the first side, and the supporting layer is positioned on the first side; the reflecting medium layer is positioned on the first side, is positioned above the supporting layer and is embedded into the piezoelectric layer; an electrode layer located on the second side and on the piezoelectric layer; the reflective medium layer comprises a first top and a first side, the first top comprises a first concave-convex part, the first side comprises a second concave-convex part, and the roughness of the second concave-convex part is larger than that of the first concave-convex part. The reflective medium layer is arranged between the piezoelectric layer and the supporting layer, is embedded into the piezoelectric layer, and comprises irregular concave-convex parts, and the bulk acoustic wave generated by the electrode layer is irregularly reflected at the irregular concave-convex parts, so that the bulk acoustic wave reflected to the upper surface of the piezoelectric layer can be reduced, and parasitic resonance is reduced.

Description

Surface acoustic wave resonator, filter, and radio frequency front-end device
Technical Field
The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device, a filter device and a radio frequency front-end device.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. Among other things, radio frequency filters include piezoelectric surface acoustic wave (Surface Acoustic Wave, SAW) filters, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filters, microelectromechanical system (Micro-Electro-Mechanical System, MEMS) filters, integrated passive device (Integrated Passive Devices, IPD) filters, and the like.
Fig. 1 shows a SAW resonator 100 comprising: a substrate 110; a piezoelectric layer 130 disposed on the substrate 110, the piezoelectric layer 130 including a first side 131 and a second side 133 opposite to the first side 131, the substrate 110 being disposed on the first side 131; and an electrode layer 150 located on the second side 133 and located on the piezoelectric layer 130, wherein the electrode layer 150 includes an interdigital transducer (InterDigital Transducers, IDT), the IDT includes a plurality of electrode bars 151 and a plurality of electrode bars 153, and polarities of the plurality of electrode bars 151 and the plurality of electrode bars 153 are different, and the electrode bars 151 and the electrode bars 153 are staggered. It should be noted that, when a voltage is applied between the electrode strips 151 and 153, in addition to exciting the surface acoustic wave propagating parallel to the piezoelectric layer 130, a bulk acoustic wave (bulk acoustic wave) is generated, and propagates in a direction perpendicular to the piezoelectric layer 130 (i.e., a direction corresponding to the thickness of the piezoelectric layer 130), as shown in fig. 1a, the bulk acoustic wave is reflected relatively regularly at the contact surface between the piezoelectric layer 130 and the substrate 110 (i.e., the reflection angle of the reflected wave is similar, so that the reflection direction of the reflected wave is relatively uniform), and the reflected bulk acoustic wave is transmitted back to the surface of the second side 133 to generate parasitic resonance (spurious resonance). Referring to the reflection coefficient (S11) curve 170 in fig. 1b, the undulating segment 171 of the curve 170 corresponds to the parasitic resonance that occurs, and the occurrence of an undulation in the reflection coefficient of the undulating segment 171 increases the insertion loss in the passband region of the SAW resonator.
Disclosure of Invention
The invention solves the problem of providing a surface acoustic wave resonator device which can reduce the volume acoustic wave reflected to the upper surface of a piezoelectric layer, thereby reducing parasitic resonance.
To solve the above problems, an embodiment of the present invention provides a surface acoustic wave resonator device including: a support layer; the piezoelectric layer is positioned above the supporting layer, the piezoelectric layer comprises a first side and a second side opposite to the first side, and the supporting layer is positioned on the first side; the reflecting medium layer is positioned on the first side, is positioned above the supporting layer and is embedded into the piezoelectric layer; an electrode layer located on the second side and on the piezoelectric layer; the reflective medium layer comprises a first top and a first side part, wherein the first top comprises a first concave-convex part, the first side part comprises a second concave-convex part, and the roughness of the second concave-convex part is larger than that of the first concave-convex part.
In some embodiments, the medium of the reflective medium layer comprises one of: vacuum, air. In some embodiments, the material of the reflective dielectric layer comprises at least one of: polymer, insulating dielectric, polysilicon.
In some embodiments, the electrode layer includes an interdigital transducer device located above the reflective dielectric layer, corresponding to the reflective dielectric layer.
In some embodiments, the first asperity has a contour arithmetic mean deviation greater than 1 nanometer.
In some embodiments, the second asperity has a contour arithmetic mean deviation greater than 2 nanometers.
In some embodiments, the support layer comprises a substrate. In some embodiments, the surface acoustic wave resonator device further comprises: the connecting layer is positioned on the first side, is positioned between the substrate and the piezoelectric layer and is used for connecting the substrate and the piezoelectric layer, and the reflecting medium layer is positioned on the connecting layer or is positioned on two sides of the reflecting medium layer in the horizontal direction.
In some embodiments, the support layer further comprises: the intermediate layer is positioned between the substrate and the piezoelectric layer and used for blocking leakage waves or temperature compensation, and the reflecting medium layer is positioned on the intermediate layer. In some embodiments, the material of the intermediate layer comprises at least one of: polymer, insulating dielectric, polysilicon.
It should be noted that, the reflective dielectric layer is located between the piezoelectric layer and the substrate or the intermediate layer, and is embedded in the piezoelectric layer, where the reflective dielectric layer includes irregular concave-convex portions, and the bulk acoustic wave generated by the electrode layer generates irregular reflection (that is, the reflection direction of the reflected wave is not uniform) at the irregular concave-convex portions, so that the bulk acoustic wave reflected to the upper surface of the piezoelectric layer can be reduced, thereby reducing parasitic resonance.
In addition, the roughness of the side of the reflective dielectric layer is greater than that of the top thereof, which can further improve the degree of irregularity of the reflection.
The embodiment of the invention also provides a filtering device, which comprises but is not limited to: at least one of the above embodiments provides a surface acoustic wave resonator device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: the power amplifying device and the filtering device provided by at least one of the above embodiments; the power amplifying device is connected with the filtering device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: a low noise amplifying device and at least one filtering device provided by the above embodiment; the low noise amplifying device is connected with the filtering device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: multiplexing means comprising at least one filtering means as provided in the above embodiments.
Drawings
FIG. 1a is a schematic cross-sectional A structure of a SAW resonator 100;
FIG. 1b is a schematic diagram of the reflection coefficient (S11) curve of a SAW resonator;
FIG. 2 is a schematic cross-sectional A structure of a SAW resonator device 200 in accordance with an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional A structure of a SAW resonator device 300 in accordance with an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional A structure of a SAW resonator device 400 in accordance with an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional A structure of a SAW resonator device 500 in accordance with an embodiment of the present invention;
fig. 6 is a schematic cross-sectional a structure of a SAW filter device 600 according to an embodiment of the present invention;
fig. 7 is a schematic cross-sectional a structure of a SAW filter device 700 according to an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than as described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, a voltage is applied between two adjacent electrode bars, and in addition to the excitation surface wave, a bulk acoustic wave is generated, and propagates in a direction perpendicular to the piezoelectric layer (i.e., a direction corresponding to the thickness of the piezoelectric layer), the bulk acoustic wave is reflected relatively regularly at the contact surface between the piezoelectric layer and the substrate, and the reflected bulk acoustic wave is transmitted back to the upper surface of the piezoelectric layer to generate parasitic resonance, so that the insertion loss of the passband region of the SAW resonator is increased.
The inventors of the present invention have found that providing a reflective dielectric layer, which includes irregular concave-convex portions where the bulk acoustic wave generated by an electrode layer is irregularly reflected, between a piezoelectric layer and a substrate or an intermediate layer, embedded in the piezoelectric layer can reduce the bulk acoustic wave reflected to the upper surface of the piezoelectric layer, thereby reducing parasitic resonance.
The inventors of the present invention have also found that the roughness of the sides of the reflective dielectric layer being greater than the roughness of the top thereof can further increase the degree of reflective irregularities.
The embodiment of the invention provides a surface acoustic wave resonance device, which comprises: a support layer; the piezoelectric layer is positioned above the supporting layer, the piezoelectric layer comprises a first side and a second side opposite to the first side, and the supporting layer is positioned on the first side; the reflecting medium layer is positioned on the first side, is positioned above the supporting layer and is embedded into the piezoelectric layer; an electrode layer located on the second side and on the piezoelectric layer; the reflective medium layer comprises a first top and a first side part, wherein the first top comprises a first concave-convex part, the first side part comprises a second concave-convex part, and the roughness of the second concave-convex part is larger than that of the first concave-convex part.
In some embodiments, the medium of the reflective medium layer includes, but is not limited to, one of the following: vacuum, air.
In some embodiments, the material of the reflective dielectric layer includes, but is not limited to, at least one of: polymer, insulating dielectric, polysilicon.
In some embodiments, the electrode layer includes an interdigital transducer device located above the reflective dielectric layer, corresponding to the reflective dielectric layer.
In some embodiments, the first asperity has a contour arithmetic mean deviation greater than 1 nanometer.
In some embodiments, the second asperity has a contour arithmetic mean deviation greater than 2 nanometers.
In some embodiments, the support layer comprises a substrate. In some embodiments, the surface acoustic wave resonator device further comprises: the connecting layer is positioned on the first side, is positioned between the substrate and the piezoelectric layer and is used for connecting the substrate and the piezoelectric layer, and the reflecting medium layer is positioned on the connecting layer or is positioned on two sides of the reflecting medium layer in the horizontal direction.
In some embodiments, the support layer further comprises: the intermediate layer is positioned between the substrate and the piezoelectric layer and used for blocking leakage waves or temperature compensation, and the reflecting medium layer is positioned on the intermediate layer. In some embodiments, the material of the intermediate layer includes, but is not limited to, at least one of: polymer, insulating dielectric, polysilicon.
The embodiment of the invention also provides a filtering device, which comprises but is not limited to: at least one of the above embodiments provides a surface acoustic wave resonator device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: the power amplifying device and the filtering device provided by at least one of the above embodiments; the power amplifying device is connected with the filtering device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: a low noise amplifying device and at least one filtering device provided by the above embodiment; the low noise amplifying device is connected with the filtering device.
The embodiment of the invention also provides a radio frequency front-end device, which comprises but is not limited to: multiplexing means comprising at least one filtering means as provided in the above embodiments.
Fig. 2 to 5 show 4 embodiments of the surface acoustic wave resonator device of the present invention, which employ resonator devices of different structures, but the present invention can be implemented in other ways than described herein, and thus the present invention is not limited by the embodiments disclosed below.
Fig. 2 is a schematic cross-sectional a structure of a SAW resonator device 200 according to an embodiment of the invention.
As shown in fig. 2, an embodiment of the present invention provides a SAW resonator device 200, comprising: a substrate 210; a reflective dielectric layer 230 over the substrate 210; a piezoelectric layer 250 disposed above the substrate 210, the piezoelectric layer 250 including a first side 251 and a second side 253 opposite the first side 251, the substrate 210 being disposed on the first side 251, the reflective dielectric layer 230 being disposed on the first side 251, the piezoelectric layer 250 being embedded therein; and an electrode layer 270 on the second side 253 on the piezoelectric layer 250, the electrode layer 270 being located above the reflective dielectric layer 230; the reflective medium layer 230 includes a top 231 and a side 233, the top 231 includes irregular concave-convex portions, and the side 233 includes irregular concave-convex portions.
As shown in fig. 2, a voltage is applied to the electrode layer 270 to generate a bulk acoustic wave, and the bulk acoustic wave propagates to the irregular concave-convex portion of the top 231 or the side 233 in a direction perpendicular to the piezoelectric layer 250 to generate irregular reflection, so that the bulk acoustic wave reflected back to the surface of the second side 253 is reduced, thereby reducing parasitic resonance. Referring again to the reflection coefficient (S11) curve 190 of fig. 1b, the undulating segment 191 of the curve 190 corresponds to a reduced parasitic resonance, and comparing the undulating segment 171 to the undulating segment 191, it is seen that reducing the parasitic resonance reduces the amplitude of the undulating segment, thereby reducing the insertion loss in the passband region of the SAW resonator device. It should be noted that fig. 1b is only illustrative for more intuitively understanding the beneficial effects of the embodiments of the present invention, but does not equate to the actual performance of the SAW resonator device of the embodiments of the present invention.
In this embodiment, the material of the substrate 210 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the medium of the reflective medium layer 230 includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective dielectric layer 230, i.e., the two sides in the horizontal direction, are the piezoelectric layers 250, the lower side of the reflective dielectric layer 230 is the substrate 210, the upper side of the reflective dielectric layer 230 is the piezoelectric layers 250, i.e., the two sides in the vertical direction of the reflective dielectric layer 230 are the substrate 210 and the piezoelectric layers 250, respectively.
In this embodiment, the material of the piezoelectric layer 250 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.
In this embodiment, the electrode layer 270 includes an interdigital transducer (IDT) corresponding to the reflective medium layer 230, where the IDT includes a plurality of first electrode strips and a plurality of second electrode strips, and the polarities of the plurality of first electrode strips and the plurality of second electrode strips are different, and the first electrode strips and the second electrode strips are staggered. It should be noted that, the IDT structure in the embodiment of the present invention is a specific embodiment, and the present invention may be implemented by other IDT structures different from the IDT structure described herein, so the present invention is not limited by the specific embodiment, and other IDT structures known to those skilled in the art may be applied to the embodiment of the present invention.
In this embodiment, the roughness of the side portion 233 is greater than that of the top portion 231 to further increase the degree of reflection irregularity. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the top 231 is greater than 1 nanometer. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portions of the side portions 233 is greater than 2 nm. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness.
In another embodiment, the SAW resonator device further comprises a connection layer between the substrate and the piezoelectric layer for bonding or bonding the substrate and the piezoelectric layer, the connection layer material including, but not limited to, at least one of: polymer, insulating dielectric, polysilicon. Wherein the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. The insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
Fig. 3 is a schematic cross-sectional a structure of a SAW resonator device 300 according to an embodiment of the invention.
As shown in fig. 3, an embodiment of the present invention provides a SAW resonator device 300, comprising: a substrate 310; a connection layer 320 on the substrate 310; a reflective dielectric layer 330 over the substrate 310; a piezoelectric layer 340 disposed on the connection layer 320, the piezoelectric layer 340 including a first side 341 and a second side 343 opposite to the first side 341, the substrate 310 being disposed on the first side 341, the connection layer 320 being disposed on the first side 341, the reflective medium layer 330 being disposed on the first side 341, the piezoelectric layer 340 being embedded therein, the connection layer 320 being disposed on left and right sides (i.e., two sides in a horizontal direction) of the reflective medium layer 330 for bonding or bonding the substrate 310 and the piezoelectric layer 340; an electrode layer 350 on the second side 343 on the piezoelectric layer 340, the electrode layer 350 being above the reflective dielectric layer 330; and a temperature compensation layer 360 on the second side 343 on the piezoelectric layer 340 covering the electrode layer 350; the reflective medium layer 330 includes a top 331 and a side 333, the top 331 includes an irregular concave-convex portion, and the side 333 includes an irregular concave-convex portion.
It should be noted that, when a voltage is applied to the electrode layer 350, a bulk acoustic wave is generated, and the bulk acoustic wave propagates to the irregular concave-convex portion of the top 331 or the side 333 in a direction perpendicular to the piezoelectric layer 340, and irregular reflection is generated, so that the bulk acoustic wave reflected back to the surface of the second side 343 is reduced, thereby reducing parasitic resonance.
In this embodiment, the material of the substrate 310 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the connection layer 320 is located between the substrate 310 and the piezoelectric layer 340 in the vertical direction. In this embodiment, the material of the connection layer 320 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the medium of the reflective medium layer 330 includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective medium layer 330, i.e., the two sides in the horizontal direction, are the connection layer 320 and the piezoelectric layer 340 located on the connection layer 320, the lower side of the reflective medium layer 330 is the substrate 310, and the upper side of the reflective medium layer 330 is the piezoelectric layer 340, i.e., the two sides in the vertical direction of the reflective medium layer 330 are the substrate 310 and the piezoelectric layer 340, respectively.
In this embodiment, the material of the piezoelectric layer 340 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.
In this embodiment, the electrode layer 350 includes an interdigital transducer (IDT), corresponding to the reflective medium layer 330, where the IDT includes a plurality of first electrode strips and a plurality of second electrode strips, and the polarities of the plurality of first electrode strips and the plurality of second electrode strips are different, and the first electrode strips and the second electrode strips are staggered. It should be noted that, the IDT structure in the embodiment of the present invention is a specific embodiment, and the present invention may be implemented by other IDT structures different from the IDT structure described herein, so the present invention is not limited by the specific embodiment, and other IDT structures known to those skilled in the art may be applied to the embodiment of the present invention.
It should be noted that the material of the temperature compensation layer 360 (e.g., silicon dioxide) and the material of the piezoelectric layer 340 have opposite temperature frequency shift characteristics, so that the frequency temperature coefficient (Temperature Coefficient of Frequency, TCF) of the resonant device may be reduced toward 0 ppm/°c, thereby improving the frequency-temperature stability.
In this embodiment, the roughness of the side portion 333 is greater than that of the top portion 331 to further enhance the degree of reflection irregularity. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the top 331 is greater than 1 nanometer. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portions of the side portions 333 is greater than 2 nm. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness.
As shown in fig. 4, an embodiment of the present invention provides a SAW resonator apparatus 400, comprising: a substrate 410; a connection layer 430 on the substrate 410; a reflective dielectric layer 450 on the connection layer 430; a piezoelectric layer 470 disposed on the connection layer 430, wherein the piezoelectric layer 470 includes a first side 471 and a second side 473 opposite to the first side 471, the substrate 410 is disposed on the first side 471, the connection layer 430 is disposed on the first side 471, the reflective medium layer 450 is disposed on the first side 471, and the piezoelectric layer 470 is embedded therein; and an electrode layer 490 on the second side 473 on the piezoelectric layer 470, the electrode layer 490 being above the reflective dielectric layer 450; the reflective medium layer 450 includes a top 451 and a side 453, and the top 451 includes an irregular concave-convex portion.
It should be noted that, when a voltage is applied to the electrode layer 490, a bulk acoustic wave is generated, and the bulk acoustic wave propagates to the irregular concave-convex portion of the top 451 in a direction perpendicular to the piezoelectric layer 470, and irregular reflection is generated, so that the bulk acoustic wave reflected to the surface of the second side 473 is reduced, thereby reducing parasitic resonance.
In this embodiment, the material of the substrate 410 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the connection layer 430 is located between the substrate 410 and the piezoelectric layer 470 in the vertical direction. In this embodiment, the material of the connection layer 430 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the material of the reflective medium layer 450 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the reflective medium layer 450 is made of a material different from that of the connection layer 430. In another embodiment, the material of the reflective dielectric layer and the material of the connection layer may be the same. It should be noted that, filling the reflective dielectric layer may enhance the connection strength between the substrate and the piezoelectric layer.
In another embodiment, the medium of the reflective medium layer includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective dielectric layer 450, i.e., the two sides in the horizontal direction, are the piezoelectric layers 470, the lower side of the reflective dielectric layer 450 is the connection layer 430, and the upper side of the reflective dielectric layer 450 is the piezoelectric layers 470, i.e., the two sides in the vertical direction of the reflective dielectric layer 450 are the connection layer 430 and the piezoelectric layers 470, respectively.
In this embodiment, the material of the piezoelectric layer 470 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.
In this embodiment, the electrode layer 490 includes an interdigital transducer (IDT) corresponding to the reflective medium layer 450, where the IDT includes a plurality of first electrode strips and a plurality of second electrode strips, and the polarities of the plurality of first electrode strips and the plurality of second electrode strips are different, and the first electrode strips and the second electrode strips are staggered. It should be noted that, the IDT structure in the embodiment of the present invention is a specific embodiment, and the present invention may be implemented by other IDT structures different from the IDT structure described herein, so the present invention is not limited by the specific embodiment, and other IDT structures known to those skilled in the art may be applied to the embodiment of the present invention.
In this embodiment, the irregular concave-convex portion of the top 451 has a mean deviation in contour arithmetic greater than 1 nm. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness.
Fig. 5 is a schematic cross-sectional a structure of a SAW resonator device 500 according to an embodiment of the invention.
As shown in fig. 5, an embodiment of the present invention provides a SAW resonator device 500, comprising: a substrate 510; an intermediate layer 530 on the substrate 510 for blocking leakage waves or temperature compensation; a reflective dielectric layer 550 on the intermediate layer 530; a piezoelectric layer 570 disposed on the middle layer 530, the piezoelectric layer 570 including a first side 571 and a second side 573 opposite the first side 571, the substrate 510 being disposed on the first side 571, the middle layer 530 being disposed on the first side 571, the reflective dielectric layer 550 being disposed on the first side 571, the piezoelectric layer 570 being embedded therein; and an electrode layer 590 on the second side 573 on the piezoelectric layer 570, the electrode layer 590 being located above the reflective dielectric layer 550; the reflective medium layer 550 includes a top 551 and a side 553, the top 551 includes an irregular concave-convex portion, and the side 553 includes an irregular concave-convex portion.
It should be noted that, when a voltage is applied to the electrode layer 590, a bulk acoustic wave is generated, and the bulk acoustic wave propagates to the irregular concave-convex portion of the top 551 or the side 553 in a direction perpendicular to the piezoelectric layer 570, and irregular reflection is generated, so that the bulk acoustic wave reflected back to the surface of the second side 573 is reduced, thereby reducing parasitic resonance.
In this embodiment, the material of the substrate 510 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the material of the intermediate layer 530 includes, but is not limited to, at least one of: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the material of the reflective dielectric layer 550 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the reflective dielectric layer 550 is made of a material different from that of the intermediate layer 530. In another embodiment, the material of the reflective dielectric layer and the material of the intermediate layer may be the same. It should be noted that, filling the reflective dielectric layer may enhance the strength of the connection between the intermediate layer and the piezoelectric layer.
In another embodiment, the medium of the reflective medium layer includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective dielectric layer 550, i.e., the two sides in the horizontal direction, are the piezoelectric layers 570, the lower side of the reflective dielectric layer 550 is the middle layer 530, and the upper side of the reflective dielectric layer 550 is the piezoelectric layer 570, i.e., the two sides in the vertical direction of the reflective dielectric layer 550 are the middle layer 530 and the piezoelectric layer 570, respectively.
In this embodiment, the material of the piezoelectric layer 570 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. The acoustic impedance of the material of the middle layer 530 is different from that of the material of the piezoelectric layer 570, so that leakage waves can be blocked. In addition, if the material of the intermediate layer 530 (e.g., silicon dioxide) and the material of the piezoelectric layer 570 have opposite temperature frequency shift characteristics, the TCF of the resonant device may be reduced toward 0 ppm/°c, thereby improving frequency-temperature stability, i.e., the intermediate layer 530 is a temperature compensation layer.
In this embodiment, the electrode layer 590 includes an interdigital transducer (IDT) corresponding to the reflective medium layer 550, where the IDT includes a plurality of first electrode strips and a plurality of second electrode strips, and the polarities of the plurality of first electrode strips and the plurality of second electrode strips are different, and the first electrode strips and the second electrode strips are staggered. It should be noted that, the IDT structure in the embodiment of the present invention is a specific embodiment, and the present invention may be implemented by other IDT structures different from the IDT structure described herein, so the present invention is not limited by the specific embodiment, and other IDT structures known to those skilled in the art may be applied to the embodiment of the present invention.
In this embodiment, the roughness of the side portion 553 is greater than that of the top portion 551 to further enhance the degree of reflection irregularity. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the top 551 is greater than 1 nanometer. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the side portion 553 is greater than 2 nm. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness.
In this embodiment, the SAW resonator device 500 further includes: and a connection layer 520 between the substrate 510 and the intermediate layer 530 for bonding the substrate 510 and the intermediate layer 530. In this embodiment, the material of the connection layer 520 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
Fig. 6 and 7 show 2 embodiments of the filtering apparatus of the present invention, which employ different configurations of the filtering apparatus, but the present invention may be implemented in other ways than described herein, and thus the present invention is not limited by the embodiments disclosed below.
Fig. 6 is a schematic cross-sectional a structure of a SAW filter device 600 according to an embodiment of the present invention.
As shown in fig. 6, an embodiment of the present invention provides a SAW filter device 600 including: a substrate 610; a connection layer 630 on the substrate 610; a plurality of reflective dielectric layers 650 on the connection layer 630, the plurality of reflective dielectric layers 650 including a reflective dielectric layer 651, a reflective dielectric layer 653, a reflective dielectric layer 655, and a reflective dielectric layer 657; a piezoelectric layer 670 disposed on the connection layer 630, wherein the piezoelectric layer 670 includes a first side 671 and a second side 673 opposite to the first side 671, the substrate 610 is disposed on the first side 671, the connection layer 630 is disposed on the first side 671, and the plurality of reflective dielectric layers 650 are disposed on the first side 671 and are respectively embedded in the piezoelectric layer 670; and an electrode layer 690 located on the second side 673 and located on the piezoelectric layer 670, wherein the electrode layer 690 includes IDT 691, IDT 693, IDT 695 and IDT 697, and the IDT 691 is located above the reflective medium layer 651 and corresponds to the reflective medium layer 651; the IDT 693 is located above the reflective medium layer 653, corresponding to the reflective medium layer 653; the IDT 695 is located above the reflective dielectric layer 655, corresponding to the reflective dielectric layer 655; the IDT 697 is located above the reflective dielectric layer 657, corresponding to the reflective dielectric layer 657; wherein the reflective medium layer 651 includes a first top and a first side, the first top including an irregular concave-convex portion; the reflective medium layer 653 includes a second top and a second side, where the second top includes an irregular concave-convex portion; the reflective medium layer 655 includes a third top and a third side, and the third top includes an irregular concave-convex portion; the reflective medium layer 657 includes a fourth top and a fourth side, the fourth top including irregular reliefs.
It should be noted that, when a voltage is applied to the electrode layer 690, a bulk acoustic wave is generated, and the bulk acoustic wave propagates to the irregular concave-convex portions of the plurality of reflective dielectric layers 650 in a direction perpendicular to the piezoelectric layer 670, and irregular reflection is generated, so that the bulk acoustic wave reflected back to the surface of the second side 673 is reduced, thereby reducing parasitic resonance.
In this embodiment, the material of the substrate 610 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the connection layer 630 is located between the substrate 610 and the reflective medium layers 650 in a vertical direction. In this embodiment, the material of the connection layer 630 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the materials of the reflective dielectric layers 650 include, but are not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the material of the reflective medium layers 650 is different from the material of the connection layer 630. In another embodiment, the material of the plurality of reflective dielectric layers and the material of the connection layer may be the same. It should be noted that, filling multiple reflective dielectric layers can enhance the connection strength between the substrate and the piezoelectric layer.
In another embodiment, the medium of the plurality of reflective medium layers includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective dielectric layer 651, i.e., the two sides in the horizontal direction, are the piezoelectric layers 670, the lower side of the reflective dielectric layer 651 is the connection layer 630, and the upper side of the reflective dielectric layer 651 is the piezoelectric layer 670, i.e., the two sides in the vertical direction of the reflective dielectric layer 651 are the connection layer 630 and the piezoelectric layer 670, respectively.
In this embodiment, the left and right sides of the reflective dielectric layer 653, that is, the two sides in the horizontal direction, are the piezoelectric layers 670, the lower side of the reflective dielectric layer 653 is the connection layer 630, and the upper side of the reflective dielectric layer 653 is the piezoelectric layers 670, that is, the two sides in the vertical direction of the reflective dielectric layer 653 are the connection layer 630 and the piezoelectric layers 670, respectively.
In this embodiment, the left and right sides of the reflective dielectric layer 655, i.e., the two sides in the horizontal direction, are the piezoelectric layers 670, the lower side of the reflective dielectric layer 655 is the connection layer 630, and the upper side of the reflective dielectric layer 655 is the piezoelectric layers 670, i.e., the two sides in the vertical direction of the reflective dielectric layer 655 are the connection layer 630 and the piezoelectric layers 670, respectively.
In this embodiment, the left and right sides of the reflective dielectric layer 657, i.e., the two sides in the horizontal direction, are the piezoelectric layers 670, the lower side of the reflective dielectric layer 657 is the connection layer 630, and the upper side of the reflective dielectric layer 657 is the piezoelectric layers 670, i.e., the two sides in the vertical direction of the reflective dielectric layer 657 are the connection layer 630 and the piezoelectric layers 670, respectively.
In this embodiment, the material of the piezoelectric layer 670 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate.
It should be noted that IDT structures known to those skilled in the art may be applied to the embodiments of the present invention. In another embodiment, the electrode layer comprises 3 or less sets of interdigitated structures and, correspondingly, the plurality of reflective dielectric layers comprises 3 or less reflective dielectric layers. In another embodiment, the electrode layer comprises 5 or more sets of interdigitated structures, and correspondingly, the plurality of reflective dielectric layers comprises 5 or more reflective dielectric layers.
In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the first top is greater than 1 nanometer. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the second top is greater than 1 nanometer. In this embodiment, the third top irregular concave-convex has a mean deviation of the contour arithmetic greater than 1 nm. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the fourth top is greater than 1 nanometer.
Fig. 7 is a schematic cross-sectional a structure of a SAW filter device 700 according to an embodiment of the present invention.
As shown in fig. 7, an embodiment of the present invention provides a SAW filter device 700, including: a substrate 710; an intermediate layer 730 on the substrate 710 for blocking leakage waves or temperature compensation; a plurality of reflective dielectric layers 750 on the intermediate layer 730, the plurality of reflective dielectric layers 750 including a reflective dielectric layer 751, a reflective dielectric layer 753, and a reflective dielectric layer 755; a piezoelectric layer 770 disposed on the intermediate layer 730, the piezoelectric layer 770 including a first side 771 and a second side 773 opposite the first side 771, the substrate 710 disposed on the first side 771, the intermediate layer 730 disposed on the first side 771, the plurality of reflective dielectric layers 750 disposed on the first side 771 embedded in the piezoelectric layer 770; and an electrode layer 790 located on the second side 773 and located on the piezoelectric layer 770, wherein the electrode layer 790 includes an IDT 791, an IDT 793 and an IDT 795, and the IDT 791 is located above the reflective dielectric layer 751 and corresponds to the reflective dielectric layer 751; the IDT 793 is located above the reflective dielectric layer 753, corresponding to the reflective dielectric layer 753; the IDT 795 is located above the reflective dielectric layer 755, corresponding to the reflective dielectric layer 755; wherein the reflective dielectric layer 751 comprises a first top and a first side, the first top comprises an irregular relief, and the first side comprises an irregular relief; the reflective dielectric layer 753 includes a second top portion including an irregular concave-convex portion and a second side portion including an irregular concave-convex portion; the reflective media layer 755 includes a third top including irregular reliefs and a third side including irregular reliefs.
It should be noted that, when a voltage is applied to the electrode layer 790, a bulk acoustic wave is generated, and the bulk acoustic wave propagates to the irregular concave-convex portions of the plurality of reflective dielectric layers 750 along the direction perpendicular to the piezoelectric layer 770, thereby generating irregular reflection, and reducing the bulk acoustic wave reflected back to the surface of the second side 773, thereby reducing parasitic resonance.
In this embodiment, the material of the substrate 710 includes, but is not limited to, at least one of the following: silicon, silicon carbide, silicon dioxide, gallium arsenide, gallium nitride, sapphire, spinel, ceramic, and polymers. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide.
In this embodiment, the material of the intermediate layer 730 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the materials of the reflective dielectric layers 750 include, but are not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In this embodiment, the materials of the reflective dielectric layers 750 are different from the materials of the intermediate layer 730. In another embodiment, the materials of the plurality of reflective dielectric layers and the material of the intermediate layer may be the same. It should be noted that, filling a plurality of reflective dielectric layers may enhance the connection strength between the intermediate layer and the piezoelectric layer.
In another embodiment, the medium of the plurality of reflective medium layers includes, but is not limited to, one of the following: vacuum, air.
In this embodiment, the left and right sides of the reflective dielectric layer 751, i.e., the two sides in the horizontal direction, are the piezoelectric layers 770, the lower side of the reflective dielectric layer 751 is the intermediate layer 730, and the upper side of the reflective dielectric layer 751 is the piezoelectric layers 770, i.e., the two sides in the vertical direction of the reflective dielectric layer 751 are the intermediate layer 730 and the piezoelectric layers 770, respectively.
In this embodiment, the left and right sides of the reflective dielectric layer 753, that is, the two sides in the horizontal direction, are the piezoelectric layer 770, the lower side of the reflective dielectric layer 753 is the intermediate layer 730, and the upper side of the reflective dielectric layer 753 is the piezoelectric layer 770, that is, the two sides in the vertical direction of the reflective dielectric layer 753 are the intermediate layer 730 and the piezoelectric layer 770, respectively.
In this embodiment, the left and right sides of the reflective dielectric layer 755, i.e., the two sides in the horizontal direction, are the piezoelectric layers 770, the lower side of the reflective dielectric layer 755 is the middle layer 730, and the upper side of the reflective dielectric layer 755 is the piezoelectric layers 770, i.e., the two sides in the vertical direction of the reflective dielectric layer 755 are the middle layer 730 and the piezoelectric layers 770, respectively.
In this embodiment, the material of the piezoelectric layer 770 includes, but is not limited to, at least one of the following: aluminum nitride, aluminum oxide alloy, gallium nitride, zinc oxide, lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate. The acoustic impedance of the material of the middle layer 730 is different from that of the material of the piezoelectric layer 770, so that leakage waves can be blocked. In addition, if the material of the intermediate layer 730 (e.g., silicon dioxide) and the material of the piezoelectric layer 770 have opposite temperature frequency shift characteristics, the TCF of the resonant device may be reduced toward 0 ppm/°c, thereby improving frequency-temperature stability, i.e., the intermediate layer 730 is a temperature compensation layer.
It should be noted that IDT structures known to those skilled in the art may be applied to the embodiments of the present invention. In another embodiment, the electrode layer comprises 2 or less sets of interdigitated structures and, correspondingly, the plurality of reflective dielectric layers comprises 2 or less reflective dielectric layers. In another embodiment, the electrode layer comprises 4 or more sets of interdigitated structures and, correspondingly, the plurality of reflective dielectric layers comprises 4 or more reflective dielectric layers.
In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the first top is greater than 1 nanometer. In this embodiment, the first side portion has an average deviation of an outline of the irregular concave-convex portion of greater than 1 nm. The arithmetic mean deviation of the contour refers to the arithmetic mean of the absolute value of the contour deviation in the sampling length, and is used to represent the surface roughness.
In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the second top is greater than 1 nanometer. In this embodiment, the average deviation of the contour arithmetic of the irregular concave-convex portion of the second side portion is greater than 1 nanometer.
In this embodiment, the third top irregular concave-convex has a mean deviation of the contour arithmetic greater than 1 nm. In this embodiment, the third side portion has an average deviation of the contour arithmetic of the irregular concave-convex portion of greater than 1 nm.
In this embodiment, the SAW filter device 700 further includes: and a connection layer 720 between the substrate 710 and the intermediate layer 730 for bonding the substrate 710 and the intermediate layer 730. In this embodiment, the material of the connection layer 720 includes, but is not limited to, at least one of the following: polymer, insulating dielectric, polysilicon. In this embodiment, the polymer includes, but is not limited to, at least one of: benzocyclobutene (i.e., BCB), photo-sensitive epoxy photoresist (e.g., SU-8), polyimide. In this embodiment, the insulating dielectric includes, but is not limited to, at least one of: aluminum nitride, silicon dioxide, silicon nitride, titanium oxide.
In summary, the embodiment of the present invention provides a surface acoustic wave resonator device, which includes a reflective dielectric layer, and is disposed between the piezoelectric layer and a substrate or an intermediate layer, and is embedded in the piezoelectric layer, where the reflective dielectric layer includes irregular concave-convex portions, and bulk acoustic waves generated by an electrode layer generate irregular reflection at the irregular concave-convex portions, so that bulk acoustic waves reflected to an upper surface of the piezoelectric layer can be reduced, thereby reducing parasitic resonance.
In addition, the roughness of the side of the reflective dielectric layer is greater than that of the top thereof, which can further improve the degree of irregularity of the reflection.
It should be understood that the examples and embodiments herein are illustrative only and that various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the application as defined by the appended claims.

Claims (12)

1. A surface acoustic wave resonator device comprising:
a support layer;
the piezoelectric layer is positioned above the supporting layer, the piezoelectric layer comprises a first side and a second side opposite to the first side, and the supporting layer is positioned on the first side;
the reflecting medium layer is positioned on the first side, is positioned above the supporting layer and is embedded into the piezoelectric layer;
an electrode layer located on the second side and on the piezoelectric layer;
the reflective medium layer comprises a first top and a first side part, wherein the first top comprises a first concave-convex part, the first side part comprises a second concave-convex part, and the roughness of the second concave-convex part is larger than that of the first concave-convex part;
the medium of the reflective medium layer comprises one of the following: vacuum, air.
2. The surface acoustic wave resonator device of claim 1, wherein the electrode layer comprises an interdigital transducer device positioned above the reflective dielectric layer corresponding to the reflective dielectric layer.
3. The surface acoustic wave resonator device according to claim 1, characterized in that the first concave-convex section has a contour arithmetic mean deviation of more than 1 nm.
4. The surface acoustic wave resonator device according to claim 1, characterized in that the second concave-convex section has a contour arithmetic mean deviation of more than 2 nm.
5. The surface acoustic wave resonator device of claim 1, wherein the support layer comprises a substrate.
6. The surface acoustic wave resonator apparatus of claim 5, further comprising: the connecting layer is positioned on the first side, is positioned between the substrate and the piezoelectric layer and is used for connecting the substrate and the piezoelectric layer, and the reflecting medium layer is positioned on the connecting layer or is positioned on two sides of the reflecting medium layer in the horizontal direction.
7. The surface acoustic wave resonator apparatus of claim 5, wherein the support layer further comprises: the intermediate layer is positioned between the substrate and the piezoelectric layer and used for blocking leakage waves or temperature compensation, and the reflecting medium layer is positioned on the intermediate layer.
8. The surface acoustic wave resonator device of claim 7, wherein the material of the intermediate layer comprises at least one of: polymer, insulating dielectric, polysilicon.
9. A filtering apparatus, comprising: at least one surface acoustic wave resonator device as claimed in one of claims 1 to 8.
10. A radio frequency front end device, comprising: power amplifying means and at least one filtering means as claimed in claim 9; the power amplifying device is connected with the filtering device.
11. A radio frequency front end device, comprising: low noise amplifying means and at least one filtering means as claimed in claim 9; the low noise amplifying device is connected with the filtering device.
12. A radio frequency front end device, comprising: multiplexing means comprising at least one filtering means according to claim 9.
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