CN113810003A - 基于集成无源器件工艺的小型化传输零点可控带通滤波器 - Google Patents
基于集成无源器件工艺的小型化传输零点可控带通滤波器 Download PDFInfo
- Publication number
- CN113810003A CN113810003A CN202110989529.0A CN202110989529A CN113810003A CN 113810003 A CN113810003 A CN 113810003A CN 202110989529 A CN202110989529 A CN 202110989529A CN 113810003 A CN113810003 A CN 113810003A
- Authority
- CN
- China
- Prior art keywords
- capacitor
- inductor
- band
- layer
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000008569 process Effects 0.000 title claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims abstract description 97
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 125
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 48
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 48
- 238000000151 deposition Methods 0.000 claims description 18
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 15
- 238000009713 electroplating Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000009812 interlayer coupling reaction Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 14
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 238000004891 communication Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- HXVNBWAKAOHACI-UHFFFAOYSA-N 2,4-dimethyl-3-pentanone Chemical compound CC(C)C(=O)C(C)C HXVNBWAKAOHACI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/007—Manufacturing frequency-selective devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0092—Inductor filters, i.e. inductors whose parasitic capacitance is of relevance to consider it as filter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110989529.0A CN113810003B (zh) | 2021-08-26 | 2021-08-26 | 基于集成无源器件工艺的小型化传输零点可控带通滤波器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110989529.0A CN113810003B (zh) | 2021-08-26 | 2021-08-26 | 基于集成无源器件工艺的小型化传输零点可控带通滤波器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113810003A true CN113810003A (zh) | 2021-12-17 |
CN113810003B CN113810003B (zh) | 2023-09-08 |
Family
ID=78941832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110989529.0A Active CN113810003B (zh) | 2021-08-26 | 2021-08-26 | 基于集成无源器件工艺的小型化传输零点可控带通滤波器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113810003B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115313001A (zh) * | 2022-07-29 | 2022-11-08 | 杭州电子科技大学 | 一种基于ipd的小型化高带外抑制带通滤波器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0604892D0 (en) * | 2005-04-18 | 2006-04-19 | Agilent Technologies Inc | Acoustically coupled resonators and method of making the same |
WO2010092308A1 (fr) * | 2009-02-12 | 2010-08-19 | Thomson Licensing | Reseau de filtrage en technologie silicium si-hr |
US20100308925A1 (en) * | 2009-06-09 | 2010-12-09 | Seoul National University Industry Foundation | Method of producing micromachined air-cavity resonator, micromachined air-cavity resonator, band-pass filter and oscillator using the method |
WO2018056224A1 (ja) * | 2016-09-21 | 2018-03-29 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路および通信装置 |
CN109616727A (zh) * | 2018-11-15 | 2019-04-12 | 西安电子科技大学昆山创新研究院 | 一种带通滤波器及其制备方法 |
-
2021
- 2021-08-26 CN CN202110989529.0A patent/CN113810003B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB0604892D0 (en) * | 2005-04-18 | 2006-04-19 | Agilent Technologies Inc | Acoustically coupled resonators and method of making the same |
WO2010092308A1 (fr) * | 2009-02-12 | 2010-08-19 | Thomson Licensing | Reseau de filtrage en technologie silicium si-hr |
US20100308925A1 (en) * | 2009-06-09 | 2010-12-09 | Seoul National University Industry Foundation | Method of producing micromachined air-cavity resonator, micromachined air-cavity resonator, band-pass filter and oscillator using the method |
WO2018056224A1 (ja) * | 2016-09-21 | 2018-03-29 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路および通信装置 |
US20190326884A1 (en) * | 2016-09-21 | 2019-10-24 | Murata Manufacturing Co., Ltd. | Acoustic wave device, radio frequency front-end circuit, and communication device |
CN109616727A (zh) * | 2018-11-15 | 2019-04-12 | 西安电子科技大学昆山创新研究院 | 一种带通滤波器及其制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115313001A (zh) * | 2022-07-29 | 2022-11-08 | 杭州电子科技大学 | 一种基于ipd的小型化高带外抑制带通滤波器 |
Also Published As
Publication number | Publication date |
---|---|
CN113810003B (zh) | 2023-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8018299B2 (en) | Band-pass filter circuit and multi-layer structure and method thereof | |
CN103138703B (zh) | 一种叠层高通滤波器 | |
CN109802216B (zh) | 基于薄膜集成无源器件工艺的宽带小型化威尔金森功分器及其制备方法 | |
KR101492268B1 (ko) | 반도체 디바이스용 인덕터와 그 제조 방법 및 반도체 디바이스의 형성 방법 | |
TWI531108B (zh) | 雙工器與其線路結構暨射頻收發裝置 | |
CN104682910A (zh) | 一种互感耦合滤波器 | |
Hsiao et al. | A compact V-band bandpass filter in IPD technology | |
CN103956985A (zh) | 一种具有多层结构的带通滤波器 | |
CN108598632A (zh) | 一种具有双零点宽阻带的siw-cpw超宽带滤波器 | |
CN113949360A (zh) | 一种高性能小型化的ipd带通滤波器 | |
CN113810003B (zh) | 基于集成无源器件工艺的小型化传输零点可控带通滤波器 | |
CN102856620A (zh) | 一种采用叠层结构的巴伦 | |
CN116094478A (zh) | 一种基于5g通信n79频段的ipd滤波器及其制作方法 | |
US20190260344A1 (en) | Inductively Coupled Filter and Wireless Fidelity Wifi Module | |
CN110518890B (zh) | 宽阻带ltcc低通滤波器 | |
CN115694394A (zh) | 一种适用于wifi 5g频段的ipd带通滤波器芯片 | |
CN115313001A (zh) | 一种基于ipd的小型化高带外抑制带通滤波器 | |
CN205725677U (zh) | 一种ipd带通滤波器 | |
CN205647456U (zh) | 一种ipd低通滤波器 | |
CN109150130A (zh) | 一种电感耦合型带通滤波器 | |
CN113556094A (zh) | 一种电容电感嵌套结构小型化谐振器 | |
CN103138705A (zh) | 一种带通滤波器 | |
CN113871823B (zh) | 一种基于ipd技术的小型化高性能双工器 | |
CN105762469A (zh) | 一种新型多层谐振结构超宽带滤波器 | |
Li et al. | Design of super compact bandpass filter using silicon-based integrated passive device technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240325 Address after: Room 5558, Building C, No. 525 Xixi Road, Xihu District, Hangzhou City, Zhejiang Province, 310000 Patentee after: Hangzhou Qibeijia Information Technology Co.,Ltd. Country or region after: China Address before: 310018 No. 2 street, Xiasha Higher Education Zone, Hangzhou, Zhejiang Patentee before: HANGZHOU DIANZI University Country or region before: China |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240412 Address after: 210000 building 18, 699-22 Xuanwu Avenue, Xuanwu District, Nanjing City, Jiangsu Province Patentee after: CERTUSNET Corp. Country or region after: China Address before: Room 5558, Building C, No. 525 Xixi Road, Xihu District, Hangzhou City, Zhejiang Province, 310000 Patentee before: Hangzhou Qibeijia Information Technology Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |