CN113809635A - Vertical cavity surface emitting laser and preparation method thereof - Google Patents
Vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- CN113809635A CN113809635A CN202111071919.6A CN202111071919A CN113809635A CN 113809635 A CN113809635 A CN 113809635A CN 202111071919 A CN202111071919 A CN 202111071919A CN 113809635 A CN113809635 A CN 113809635A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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Abstract
The invention discloses a preparation method of a vertical cavity surface emitting laser, which comprises the following steps: performing oxidation treatment on the columnar active region platform to form an oxidation hole, which specifically comprises the following steps: performing wet oxidation for the first time, forming a first oxidation hole with the aperture size larger than the target aperture size in the middle of an oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; performing wet oxidation for the second time, forming a second oxidation hole with the aperture size smaller than that of the first oxidation hole and larger than that of the target in the middle of the oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; and repeating the steps until an Nth wet oxidation, forming oxidized pores with the pore size equal to the target pore size, wherein N is an integer greater than or equal to 2. The invention also discloses a vertical cavity surface emitting laser. The invention can eliminate the phenomenon of cracking or bulging of the oxidation limiting layer in the oxidation process, thereby effectively improving the reliability of the device.
Description
Technical Field
The invention relates to a method for preparing a Vertical-Cavity Surface-Emitting Laser (VCSEL for short), belonging to the technical field of semiconductor lasers.
Background
The VCSEL is a semiconductor laser which uses distributed Bragg reflectors arranged at the upper side and the lower side of an active region as a resonant cavity and generates light with the light emitting direction vertical to the epitaxial surface. Compared with an edge-emitting semiconductor laser, the VCSEL has the advantages of small volume, easiness in packaging, high two-dimensional expansibility and the like, and is widely applied to the fields of data communication, consumer electronics, laser radars and the like.
In the manufacturing process of the existing VCSEL, an optical hole is mostly defined by adopting an oxidized hole method. The main process steps comprise: the epitaxial growth of the wafer, in the epitaxial growth process of the wafer, AlGaAs layers with high Al components are arranged on the lower Bragg reflector layer and/or the upper Bragg reflector layer close to the resonant cavity as oxidation limiting layers, and from bottom to top, the VCSEL chip structure mainly comprises an N-type doped DBR reflector, a resonant cavity containing a quantum well/quantum dot active region and a P-type doped DBR reflector; etching a columnar (typically cylindrical) active region mesa in the epitaxially grown layer structure, with the need to ensure that the oxide confinement layer is exposed on the sidewalls of the active region mesa; oxidizing the sidewall of the active region mesa along the oxide confinement layer in a lateral direction, the oxidized oxide confinement layer forming a chemically stable aluminum oxide (α -Al)2O3) Layer of alpha-Al2O3Has good insulation, effectively blocks the passing of the injected current, can well limit the lateral diffusion of the injected current, and simultaneously, the alpha-Al2O3The optical waveguide has a smaller refractive index, so that an optical field can be more concentrated in a circuit injection window area, the overlapping of the optical field and an active area is improved, an optical limiting factor is increased, the effect of reducing the threshold current of a device is achieved, and areas which are not oxidized in the middle form an oxidation hole, namely a light outlet hole and a current injection area of the VCSEL; and then carrying out surface passivation, a planarization process (filling the groove with polymers such as polyimide, benzocyclobutene and the like), electrode manufacturing, leading out and the like.
In the above process engineering, the formation of oxidized pores is very critical. The existing oxidized pore is usually formed by a wet oxidation process, wherein the wet oxidation process refers to the following steps: at high temperatures, AThe lGaAs reacts with water vapor carried by nitrogen or nitrogen-hydrogen mixed gas to generate a compound alpha-Al of Al2O3、Al(OH)xAs, As compounds2O3And gas H2、O2And the like. The inventor finds out through long-term practice that: due to gas generation during wet oxidation, and AlGaAs and alpha-Al2O3The material shrinkage caused by the different lattice constants of the materials, and the phenomenon that the oxidation limiting layer is cracked or cracked frequently can cause the electro-optical characteristics of the laser to be deteriorated, and even the device to be failed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a preparation method of a vertical cavity surface emitting laser, which eliminates the phenomenon of cracking or bulging of an oxidation limiting layer in the oxidation process by a multiple wet oxidation process, thereby effectively improving the reliability of a device.
The invention specifically adopts the following technical scheme to solve the technical problems:
a method for preparing a vertical cavity surface emitting laser comprises the following steps: a step of performing oxidation treatment on the side wall of the columnar active region platform to form an oxidation hole in the middle of the oxidation limiting layer in the columnar active region platform; the oxidation treatment method specifically comprises the following steps: firstly, carrying out first wet oxidation on the side wall of a columnar active region platform, forming a first oxidation hole with the aperture size larger than the target aperture size in the middle of an oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; carrying out second wet oxidation on the side wall of the columnar active region platform, forming a second oxidation hole with the aperture size smaller than that of the first oxidation hole and larger than the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; and repeating the steps until the side wall of the columnar active region platform is subjected to wet oxidation for the Nth time, forming an oxidation hole with the aperture size equal to the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, wherein N is an integer greater than or equal to 2.
Preferably, N = 2.
Further preferably, the pore size of the first pores is 130% to 160% of the target pore size.
Preferably, the circle of alumina on the outermost circle of the oxidation limiting layer is removed by using an etchant which can chemically react with the alumina to generate water-soluble substances.
Further preferably, the etching solution is a strongly alkaline solution.
Still further preferably, the strongly basic solution is formed from KOH: water is added according to the weight ratio of 1: 12 in proportion.
Further, the preparation method further comprises the following steps: and forming a passivation layer on the surface of the columnar active region platform after the oxidation treatment.
Based on the technical scheme, the method can also obtain the following steps:
a vertical cavity surface emitting laser prepared by the method of any one of the above technical schemes.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the preparation of the oxidation hole is realized through multiple wet oxidation of oxidation-corrosion-oxidation, and the gas generated by single oxidation reaction is reduced to a limited extent, so that the oxidation-limited VCSEL with the air gap structure on the outer ring of the oxidation limiting layer is manufactured, the air gap region can provide stress buffering for the internal oxidation region, and the condition of oxide layer bulging caused by the fact that the reaction gas generated in the material cannot be discharged in the wet oxidation process is improved; in addition, the shape and the size of the oxidation hole can be controlled more strictly by adopting a multiple wet oxidation process of oxidation-corrosion-oxidation, and compared with the traditional one-time oxidation process, the process has better repeatability, so that the consistency of the produced VCSEL is better.
Drawings
FIG. 1 is a schematic process flow diagram of oxidized via generation in an embodiment;
fig. 2 is a schematic structural diagram of a VCSEL fabricated in an embodiment.
Detailed Description
Aiming at the problem that an oxidation limiting layer is easy to crack or bulge in the oxidation hole preparation process in the prior art, the preparation of the oxidation hole is realized through multiple wet oxidation of oxidation-corrosion-oxidation, and the gas generated by single oxidation reaction is reduced to the limited extent, so that the oxidation limiting type VCSEL with an air gap structure on the outer ring of the oxidation limiting layer is prepared, the air gap region can provide stress buffering for the internal oxidation region, and the condition of oxide layer bulging and cracking caused by the fact that the reaction gas generated in the material cannot be discharged in the wet oxidation process is improved; in addition, the shape and the size of the oxidation hole can be controlled more strictly by adopting a multiple wet oxidation process of oxidation-corrosion-oxidation, and compared with the traditional one-time oxidation process, the process has better repeatability, so that the consistency of the produced VCSEL is better.
The preparation method of the vertical cavity surface emitting laser provided by the invention comprises the following steps: a step of performing oxidation treatment on the side wall of the columnar active region platform to form an oxidation hole in the middle of the oxidation limiting layer in the columnar active region platform; the oxidation treatment method specifically comprises the following steps: firstly, carrying out first wet oxidation on the side wall of a columnar active region platform, forming a first oxidation hole with the aperture size larger than the target aperture size in the middle of an oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; carrying out second wet oxidation on the side wall of the columnar active region platform, forming a second oxidation hole with the aperture size smaller than that of the first oxidation hole and larger than the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; and repeating the steps until the side wall of the columnar active region platform is subjected to wet oxidation for the Nth time, forming an oxidation hole with the aperture size equal to the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, wherein N is an integer greater than or equal to 2.
The specific wet oxidation times N in the technical scheme can be flexibly selected according to parameters such as the size of an actual chip, the shape and the aperture of an oxidation hole to be prepared and the like; from the viewpoint of the combination of the actual effect and the increase in the number of steps, N =2 is preferable; further preferably, the pore size of the first pores is 130% to 160% of the target pore size.
The removal of the outermost alumina of the oxidation limiting layer is preferably achieved by using an etchant that chemically reacts with alumina to form water-soluble substances, such as an acidic solution having a pH of less than 7 or a basic solution having a pH of greater than 7. For devices using GaAs or InP materials as the substrate, acidic solutions (e.g., phosphoric acid, hydrochloric acid, dilute sulfuric acid, etc.) typically attack the GaAs or InP materials causing irreparable damage to the device. In alkaline solution, KOH is a strong anisotropic etchant, and reacts with Al2O3The potassium metaaluminate which is the product of the reaction has high solubility in water, is not easy to separate out crystals in the reaction process, and is easy to control the KOH to Al2O3The corrosion process of (a), which typically dilutes the solution, slows the corrosion rate, therefore KOH solution is preferred; further preferably, the KOH solution is formed from KOH: water is added according to the weight ratio of 1: 12 in proportion.
For the public to understand, the technical scheme of the invention is explained in detail by a preferred embodiment and the accompanying drawings:
the preparation process of this example is specifically as follows:
firstly, carrying out wafer epitaxial growth on a substrate to generate a layer structure consisting of an N-type doped DBR reflector, a resonant cavity containing a quantum well/quantum dot active region and a P-type doped DBR reflector from bottom to top, wherein an AlGaAs layer with high Al component is arranged on a lower Bragg reflector layer and/or an upper Bragg reflector layer close to the resonant cavity as an oxidation limiting layer in the epitaxial growth process of the wafer;
forming a columnar active region platform in the layer structure through a dry etching process or a wet etching process, and ensuring that the oxidation limiting layer is exposed on the side wall of the active region platform;
performing oxidation treatment on the side wall of the columnar active region platform to form an oxidation hole in the middle of the oxidation limiting layer in the columnar active region platform; the oxidation process in this example is shown in fig. 1, and specifically as follows:
step 1, putting a wafer to be oxidized into wet oxidation equipment, and performing a first wet oxidation process:
placing the wafer to be oxidized on a tray of an oxidation furnace, vacuumizing a cavity, and performing a wet oxidation process: heating the tray to above 400 ℃, and bringing 100 ℃ water vapor into an oxidation furnace chamber from a nitrogen-hydrogen mixed gas; the oxidation time is about 5 minutes; then closing the water vapor passage, and naturally cooling the wafer to room temperature in a nitrogen atmosphere; the aperture size of the oxidized pore generated by the first wet oxidation process is 130-160% of the target aperture size of 5-7 μm;
and 2, taking out the wafer after the temperature of the wafer is reduced to room temperature, and carrying out a corrosion process:
after removal from the oxidation oven, the wafer was completely immersed in a solution consisting of KOH: water = 1: 12, the current corrosion is carried out at room temperature; in order to ensure the uniformity of corrosion, stirring is not stopped in the corrosion process; the corrosion time is about 1 minute; in the process, the outer ring part of the alumina generated by the first oxidation is corroded for one circle, and after the corrosion is finished, the oxidation limiting layer in the columnar active region platform is inwards reduced for one circle relative to other layer structures;
step 3, putting the wafer into wet oxidation equipment again, and carrying out a second wet oxidation process;
carrying out wet oxidation process on the etched wafer again, setting the gas flow and temperature to be the same as those in the step 1, and adjusting the oxidation time in real time according to the size of the finally formed oxidation aperture;
step 4, depositing a dielectric film on the surface of the wafer:
after being taken out of the oxidation furnace, the wafer is placed into a Plasma Enhanced Chemical Vapor Deposition (PECVD) device, silicon nitride with the thickness of 120nm is deposited on the surface of the wafer to be used as a passivation layer, so that the invasion of water vapor is prevented, the current injection is isolated, and a circle of air gaps are formed between the oxidation limiting layer and the passivation layer.
The fabrication of the VCSEL device can then be completed with conventional processes, such as deposition of metal electrodes, thinning of the back side of the substrate, etc.
Fig. 2 shows the structure of a VCSEL formed according to the present embodiment. The structure comprises a Substrate, a lower distributed Bragg reflector N-DBR formed on the surface of the Substrate, an active region MQW consisting of a plurality of quantum wells/barriers, an upper distributed Bragg reflector P-DBR, a heavily doped P-GaAs layer positioned on the upper surface of an epitaxy, a Passivation layer for preventing water vapor from invading and a Metal layer P-Metal for current injection. As shown in fig. 2, unlike the conventional VCSEL structure: a ring of Air gaps Air-gap exists between the oxidized area at the periphery of the oxidation limiting layer in the P-DBR and the Passivation layer Passivation film.
Claims (8)
1. A method for preparing a vertical cavity surface emitting laser comprises the following steps: a step of performing oxidation treatment on the side wall of the columnar active region platform to form an oxidation hole in the middle of the oxidation limiting layer in the columnar active region platform; the method for oxidation treatment is characterized by comprising the following steps: firstly, carrying out first wet oxidation on the side wall of a columnar active region platform, forming a first oxidation hole with the aperture size larger than the target aperture size in the middle of an oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; carrying out second wet oxidation on the side wall of the columnar active region platform, forming a second oxidation hole with the aperture size smaller than that of the first oxidation hole and larger than the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, and then removing a circle of aluminum oxide on the outermost circle of the oxidation limiting layer; and repeating the steps until the side wall of the columnar active region platform is subjected to wet oxidation for the Nth time, forming an oxidation hole with the aperture size equal to the target aperture size in the middle of the oxidation limiting layer in the columnar active region platform, wherein N is an integer greater than or equal to 2.
2. A method for fabricating a vertical cavity surface emitting laser according to claim 1, wherein N = 2.
3. A method for fabricating a vertical cavity surface emitting laser according to claim 2, wherein the first oxide hole has an aperture size 130% to 160% of a target aperture size.
4. A method according to claim 1, wherein the outer most ring of alumina is removed by using an etchant that chemically reacts with alumina to form a water-soluble material.
5. A method for fabricating a vertical cavity surface emitting laser according to claim 4, wherein said etching solution is a strongly basic solution.
6. A method of fabricating a vertical cavity surface emitting laser according to claim 5, wherein said strongly basic solution is prepared from a mixture of KOH: water is added according to the weight ratio of 1: 12 in proportion.
7. A method of fabricating a vertical cavity surface emitting laser according to claim 1, further comprising: and forming a passivation layer on the surface of the columnar active region platform after the oxidation treatment.
8. A vertical cavity surface emitting laser produced by the method according to any one of claims 1 to 7.
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