CN113809187A - Indium arsenide nanostructure and infrared detector based on indium arsenide nanostructure - Google Patents
Indium arsenide nanostructure and infrared detector based on indium arsenide nanostructure Download PDFInfo
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 86
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 41
- 241000219793 Trifolium Species 0.000 claims abstract description 27
- 241000533950 Leucojum Species 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 230000010287 polarization Effects 0.000 abstract description 33
- 238000001514 detection method Methods 0.000 abstract description 10
- 238000001228 spectrum Methods 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 description 44
- 239000002135 nanosheet Substances 0.000 description 28
- 239000002070 nanowire Substances 0.000 description 13
- 238000000862 absorption spectrum Methods 0.000 description 10
- 238000003491 array Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002120 nanofilm Substances 0.000 description 4
- 238000002835 absorbance Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000002060 nanoflake Substances 0.000 description 2
- 239000002064 nanoplatelet Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002055 nanoplate Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of infrared detectors, and provides an indium arsenide nanostructure for infrared detection. The indium arsenide device comprises a substrate and indium arsenide nanostructures arranged on the substrate, wherein the indium arsenide nanostructures at least comprise indium arsenide with a sheet structure. The indium arsenide nanostructure provided by the invention has high absorptivity, further improves the wide spectrum characteristic, does not have polarization, and further provides a snowflake structure on the basis of clovers, so that the absorptivity is further improved.
Description
Technical Field
The invention belongs to the technical field of infrared detectors, and particularly relates to an indium arsenide nanostructure and an infrared detector based on the indium arsenide nanostructure.
Background
The infrared detector is greatly developed because of its wide application in the fields of communication, environmental detection and the like. The existing polarization-sensitive infrared detector is mainly made of low-dimensional and high-polarization semiconductor materials, and has great significance for integration and miniaturization of the polarization-sensitive infrared detector.
Currently, many of these integrated, miniaturized polarization-sensitive infrared detectors are based on anisotropic geometries. The polarization-sensitive infrared detector prepared based on the anisotropic geometric structure (such as the nanowire and the super surface) has narrow dichroism and infrared band absorption spectrum, namely, the absorption rate is low.
Disclosure of Invention
The invention provides an indium arsenide nanostructure and an infrared detector based on the indium arsenide nanostructure, and aims to improve the absorptivity of a polarization and wide-spectrum infrared detector.
The invention provides an indium arsenide nanostructure, comprising: the indium arsenide structure at least comprises indium arsenide with a sheet structure.
Wherein the length of the indium arsenide with the sheet structure is 2000nm, the width of the indium arsenide is 100nm, and the height of the indium arsenide is 5000 nm.
The indium arsenide structure is characterized in that the x-axis array period is 2250nm, the y-axis array period is 1750nm, the y-axis is perpendicular to the plane where the flaky indium arsenide is located, the x-axis is perpendicular to the y-axis, and the plane formed by the x-axis and the y-axis is parallel to the substrate.
Wherein the indium arsenide structure comprises a clover structure consisting of three sheet-like structures of indium arsenide.
Wherein the optimal size of each sheet-shaped structure indium arsenide is as follows: the length is 1100nm, the width is 110nm, the height is 5000nm, and the filling rate is 0.086.
Wherein the indium arsenide structure comprises an X grid structure consisting of four sheet-shaped structures of indium arsenide.
Wherein the indium arsenide structure comprises a snowflake structure consisting of six sheet-like structures of indium arsenide.
Wherein the optimal size of each sheet-shaped structure indium arsenide is as follows: 800nm in length, 110nm in thickness, 5000nm in height and 0.096 in filling rate.
Wherein the indium arsenide structure is a symmetrical structure.
The invention also provides an infrared detector based on the indium arsenide nanostructure, and the infrared detector comprises the indium arsenide nanostructure.
The invention achieves the following beneficial effects: the invention provides an indium arsenide nanostructure, comprising: the indium arsenide structure at least comprises indium arsenide with a sheet structure. According to the indium arsenide structure and the preparation method thereof, the indium arsenide structure of the sheet structure is formed on the substrate in an array mode, the nano sheets arranged in the array mode also have natural resonant cavities, more resonant modes can be contained, the absorption spectrum can be greatly expanded, and the absorption rate of the infrared detector can be improved. In addition, the invention also provides a clover indium arsenide structure and a snowflake structure, wherein the clover structure has higher polarization sensitive detection capability and stronger infrared wide-spectrum absorption capability independent of polarization and angle relative to the sheet structure, can improve the absorption rate and detection efficiency when being used on an infrared detector, and broadens the spectrum; the snowflake structure has better effect compared with a clover structure.
Drawings
FIG. 1 is a schematic structural diagram of a single InAs nanosheet provided by an embodiment of the present invention;
FIG. 2 is a schematic representation of a first embodiment of the invention providing InAs nanostructures;
FIG. 3 is a schematic representation of a second embodiment of the invention providing InAs nanostructures;
FIG. 4 is a schematic diagram of the polarization dependent absorption spectrum of a single InAs nanosheet in an embodiment of the present invention;
FIG. 5 is a schematic diagram of absorbance test structures of InAs nanosheets of different sizes in an embodiment of the present invention;
FIG. 6 is a schematic diagram of polarization characteristic curves of InAs nanosheets of different sizes in an embodiment of the present invention;
FIG. 7 is a graph of absorbance curves and polarization characteristics for an array of optimally sized InAs nanosheets in an embodiment of the present invention;
FIG. 8 is a schematic view of a structure of InAs clover provided by an embodiment of the present invention;
FIG. 9 is a schematic diagram of an InAs snowflake network structure provided by the embodiment of the invention;
FIG. 10 is a schematic view of the absorption characteristics of a portion of a structure provided by an embodiment of the present invention;
FIG. 11 is a schematic representation of the absorbency characteristics of a snowflake structure in an embodiment of the present invention
FIG. 12 is a schematic diagram of an x-configuration provided by an embodiment of the present invention;
fig. 13 is a schematic perspective view of an x-structure provided in an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The terms "comprising" and "having," and any variations thereof, in the description and claims of this application and the description of the figures are intended to cover non-exclusive inclusions. The terms "first," "second," and the like in the description and claims of this application or the accompanying drawings are used for distinguishing between different objects and not for describing a particular order. Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
Referring to fig. 1, fig. 1 is a schematic view of an InAs nanosheet structure according to two embodiments of the present invention, where the embodiment provides an indium arsenide nanostructure, including: the indium arsenide structure comprises a substrate 10 and a nanoscale indium arsenide structure 20 arranged on the substrate, wherein the indium arsenide structure 20 at least comprises indium arsenide with a sheet structure.
In this embodiment, the indium arsenide structure having a sheet structure is arranged on the substrate in an array manner, as shown in fig. 1, one indium arsenide nanosheet is arranged on the substrate, and the indium arsenide is superior to infrared detectors made of other anisotropic two-dimensional materials, such as black phosphorus and black arsenic, in nature and ReS2The infrared detectors made of materials such as GeS and the like have low photoresponse speed, the infrared detectors made of materials such as GeS and the like have poor dichroism, and other polarization-sensitive infrared detectors made based on anisotropic geometric structures (such as nanowires and super surfaces) have the defects of poor dichroism and poor infrared band absorption.
Meanwhile, compared with the one-dimensional InAs linear nanostructure, the two-dimensional InAs sheet nanostructure has a natural resonant cavity, can contain more resonant modes, and can greatly expand the absorption spectrum. Meanwhile, the advantages of high absorptivity, low dark current, high responsivity and high detectivity of the one-dimensional InAs nano-structure detector are inherited.
In order to apply the advantages of the InAs nanosheets to polarization detection, in this embodiment, a simulation experiment may be performed in advance, and a background field/fringe field model is established using a Finite Element Method (FEM) and a multiphysics simulation software COMSOL. The substrate may be an InP substrate on which a layer of silicon dioxide (SiO) is provided2Material). First, the background field absorbed by the InP substrate can be calculated by using Maxwell equation and Fresnel equation when no InAs nano structure exists. And then, adding an InAs nano structure on the InP substrate, and calculating the scattering field on the basis of the background field. Based on the geometric model of FIG. 1, the polarization dependent absorption spectrum of a single InAs nanosheet is shown in FIG. 4, wherein
Is the included angle between the long side of the nano sheet and the incident light electric vector. When the polarization direction of the incident light changes from parallel to the width of the nanoflake to perpendicular to the width of the nanoflake (angle from 0-90)0Change) and the absorption intensity of the whole spectrum has a significant downward trend. Quantitatively, the absorption intensity is reduced by more than 50 times in the wavelength range of 2000 to 3000 nm.
The length (L), width (W) and height (H) of the InAs single nanosheets are further optimized to further improve the polarization sensitivity and absorptivity. Some of the test results can be seen in fig. 5 and 6, as can be seen in fig. 5: the absorption properties vary for different wavelengths of waves, and in general, the absorption properties are optimal for a length (L) of [1800nm-2200nm ] when the width (100nm) and the height (5000nm) are constant, for a width of [900nm-1000nm ] when the length (2000nm) and the height (5000nm) are constant, for a height of [3000nm-6000nm ] when the length (2000nm) and the width (100nm) are constant, and for nanostructures of the same size, the absorption is lower the longer the wavelength, the optimal monolithic size is 2000nm, the width is 100nm, and the height is 5000 nm. The results for the polarization absorption portion are shown in fig. 6, for the same size of nanostructure, the absorption rate is higher the longer the wavelength, and the optimal geometrical dimensions based on the balance of absorption and polarization are 2000nm long, 100nm wide and 5000nm high. At the moment, the total absorption intensity of the nano-sheet is more than 35% in a wave band of 2000nm-3000nm, the nano-sheet has high absorptivity and broad spectrum characteristics, and the polarization absorption ratio is more than 50 and is more than 200 at the maximum.
In actual optical detection, in order to improve absorption efficiency, a nanosheet array is arranged on a substrate, the nanosheet array can be as shown in fig. 2 and 3, two InAs nanosheet single-row arrays can be arranged on the substrate, and the period of the array is optimized at the same time. Due to the low symmetry of the InAs nanosheets, the periods in the x and y directions are different, and through testing, the optimal array period x is 2250nm, and the period y is 1750 nm. According to the analysis, the optimal geometric parameters of the InAs nanosheet array are as follows: the absorption characteristic curve and the polarization characteristic curve of 2000nm in length, 100nm in width and 5000nm in height, the array period x of 2250nm and the period y of 1750nm are shown in figure 7, at the moment, the absorption spectrum of parallel polarized light is more than 60% in a 2-3 micron full-wave band, and the absorption rate is obviously improved compared with that of a single nanosheet. The polarization rate is higher than 40 in the whole wave band, and is slightly reduced compared with a single nanosheet, but the array structure can be widely applied to the field of polarization detection due to the obvious improvement of the absorptivity.
Furthermore, as most of light rays in nature are natural light, for the practical application of wide-spectrum detection, the wide-spectrum absorption of polarized light rays at all angles is realized, and from the actual point of selective epitaxial growth of InAs nanosheets, the geometric symmetry of design is considered to improve the comprehensive performance.
Specifically, as shown in fig. 8, the clover grid can absorb by nanosheets and has the disadvantage of polarization, because the geometrical symmetry of the clover structure is extremely high, the clover grid has the same influence on the light field regulation of polarized light rays at any angle, and the equivalence of absorption spectra at all polarization angles is shown. On the basis of good absorption of clover units, the clover grids are further formed (three InAs surround a central shaft 1 to form the clover grids). In this array, geometric parameters including clover length, thickness and height can be used to optimize absorption efficiency. To compare the absorption efficiency of nanowires, nanoplatelets and nanofilms at the same material volume, we introduced the concept of fill factor (F) to represent the density of the array. It is clear that there are two different cross-sections present, the geometric cross-section (σ)g) And periodic cross section (σ)p). The filling rate is defined as F ═ (σ)g)/σp). The same F represents that the volumes of the nano-wires and the nano-sheet arrays are the same. The pitch size and the film thickness of the corresponding nanowire array were calculated from F, where the periodic cross section is the area of the dotted line hexagon as shown in fig. 8, and the geometric cross section is the area of the gray portion in the dotted line hexagon. The optimal parameters of the clover array are 1100nm in length, 110nm in thickness and 5000nm in height, and the filling rate (F) of the clover array is 0.086.
Other types of symmetric nanosheet arrays can also be used in the experiments, suitable for eliminating polarization-sensitive absorption, such as the snowflake-shaped grid shown in fig. 9, which is a snowflake structure composed of six sheet-shaped structures of indium arsenide surrounding a central axis, and which is also equivalent to a structure composed of two clover structures nested at 180 °. The optimal parameters of the snowflake network are slightly different from those of a clover unit, the length is 800nm, the thickness is 110nm, and the F value is 0.096. The best absorbances obtained with clover and snowflake nano-grids are shown in figure 10. The absorption rate of the clover network in the 2000-3200nm full operating band is more than 60%, and the highest absorption rate is 92%. The absorption of the snowflake type grid in the whole working band of 2000-3200nm reaches 80 percent, and the highest absorption rate is 90 percent. The two structures include different absorption mechanisms. Clover arrays mainly exhibit enhanced absorption of multimode coupled nanosheets, while snow networks mainly exhibit enhanced absorption of light trapping structures, which is why the snow networks absorb more broadly and smoothly. The spacing of nanowires of different diameters can be adjusted to the same volume for the same F of 0.096. For nanowire arrays with diameters of 200nm, 300nm and 400nm, the spacings were 578nm, 867nm and 1156nm, respectively, representing a fairly dense nanowire array. In fig. 10 (where clover (1100 nm long, 120nm wide, 5000nm high), snowflake lattice (800 nm long, 110nm wide, 5000nm high) was compared with the absorption spectra of equal volume nanowire arrays and equivalent films (F ═ 0.096, where F is the fill factor), the absorption peaks of the nanowire arrays were very narrow and the absorption rate decreased rapidly with increasing probe wavelength. For a large diameter of 400nm, the absorption efficiency is highest, but only in a narrow wavelength range. In general, the absorption spectrum is much smaller than the nanoplatelet array. For an equivalent nanofilm with a thickness of 480nm, the absorption spectrum is 3-4 times lower than that based on a nanofilm array. These results indicate that the two-dimensional nanoplate arrays have higher absorption than the one-dimensional nanowire arrays and nanofilms. Meanwhile, we studied the absorption characteristics of snowflake type grids at different incident light angles, as shown in fig. 11. The snowflake network realizes wide-spectrum absorption insensitive to angles with incidence angles of 0-45 degrees and more than 80 percent, and has more advantages in actual infrared detection. These simulations indicate that the nano-shape engineering provides a simple method for the absorption modulation of the nanostructure array. Our structure provides a broadband, polarization independent and angle insensitive infrared detection design for the detector.
As an embodiment, the nanosheets may also be combined into other structures, as shown in fig. 12 and 13, and the indium arsenide structure may further include an X-grid structure composed of four sheet-like structures of indium arsenide, where the absorption rate and polarization performance of the X-grid structure are between those of clover and snowflake networks, and the X-grid structure preferably has symmetry.
The embodiment of the invention also provides an infrared detector based on the two-dimensional InAs nano structure, which comprises the two-dimensional InAs nano structure in any one of the embodiments. The infrared detector inherits the polarization characteristic brought by the geometric anisotropy of the InAs nanowire, and the prepared polarization-sensitive infrared detector has the characteristics of high absorption, wide spectrum, polarization sensitivity and few working media (the filling rate of the array is low).
Secondly, polarization sensitive absorption can be eliminated by providing structures such as an InAs nanometer clover structure array and an InAs nanometer snowflake structure array, the added geometric symmetry can be close to 100% to avoid polarization sensitive absorption, the absorption efficiency obtained in the InAs nanosheet array is far greater than that of an InAs nanowire and an InAs nanometer film which are equal in volume, and wide-spectrum absorption with insensitivity of visible light to medium-wave infrared polarization and incident light angle is realized. Therefore, the infrared detector based on the two-dimensional InAs nanostructure provided by the embodiment of the invention has higher absorption efficiency and better detection effect. From the above description, it is emphasized that the above-described monolithic structures, clover, snowflake structures, etc. may be provided on the substrate by only one, or may be provided in plurality on the substrate, and in other embodiments one or more of the monolithic structures/clover/snowflake structures may be selected to be provided on the substrate. To further enhance the effect, a plurality of monolithic/clover/snowflake arrays may be disposed on the substrate when a plurality of structures are provided.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An indium arsenide nanostructure comprising: the indium arsenide structure at least comprises indium arsenide with a sheet structure.
2. The indium arsenide nanostructure of claim 1, wherein the sheet structure comprises indium arsenide having a length of 2000nm, a width of 100nm and a height of 5000 nm.
3. The indium arsenide nanostructure of claim 2, wherein the indium arsenide structure has an x-axis array period of 2250nm and a y-axis array period of 1750nm, wherein the y-axis is perpendicular to the plane of the sheet indium arsenide, the x-axis is perpendicular to the y-axis, and the plane formed by the x-axis and the y-axis is parallel to the substrate.
4. The indium arsenide nanostructure of claim 1, wherein the indium arsenide structure comprises a clover structure comprised of three sheet structures of indium arsenide.
5. The indium arsenide nanostructure of claim 4 wherein the optimal size of each of the sheet structures indium arsenide is: the length is 1100nm, the width is 110nm, the height is 5000nm, and the filling rate is 0.086.
6. The indium arsenide nanostructure of claim 1, wherein the indium arsenide structure comprises an X-grid structure comprised of four sheet structures of indium arsenide.
7. The indium arsenide nanostructure of claim 1, wherein the indium arsenide structure comprises a snowflake structure comprised of six platelet structures of indium arsenide.
8. The indium arsenide nanostructure of claim 7 wherein the optimal size of each of the sheet structures indium arsenide is: 800nm in length, 110nm in thickness, 5000nm in height and 0.096 in filling rate.
9. The indium arsenide nanostructure of any of claims 1-8, wherein the indium arsenide structure is a symmetric structure.
10. An infrared detector based on indium arsenide nanostructures, wherein the infrared detector comprises indium arsenide nanostructures as claimed in any of claims 1-8.
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| US20140290737A1 (en) * | 2013-04-02 | 2014-10-02 | The Regents Of The University Of California | Thin film vls semiconductor growth process |
| US20170278987A1 (en) * | 2009-08-18 | 2017-09-28 | U.S. Army Research Laboratory Attn: Rdrl-Loc-I | Photodetector using resonance and related method |
| CN109962010A (en) * | 2018-11-08 | 2019-07-02 | 中国科学院半导体研究所 | Wafer grade large-scale semiconductor nanometer sheet and preparation method thereof |
| CN111704105A (en) * | 2020-06-23 | 2020-09-25 | 中国科学院半导体研究所 | Preparation method of semiconductor/superconductor heterojunction nanowire network |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170278987A1 (en) * | 2009-08-18 | 2017-09-28 | U.S. Army Research Laboratory Attn: Rdrl-Loc-I | Photodetector using resonance and related method |
| US20140290737A1 (en) * | 2013-04-02 | 2014-10-02 | The Regents Of The University Of California | Thin film vls semiconductor growth process |
| CN109962010A (en) * | 2018-11-08 | 2019-07-02 | 中国科学院半导体研究所 | Wafer grade large-scale semiconductor nanometer sheet and preparation method thereof |
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