CN113808529B - Pixel circuit and external compensation method thereof - Google Patents

Pixel circuit and external compensation method thereof Download PDF

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Publication number
CN113808529B
CN113808529B CN202111145282.0A CN202111145282A CN113808529B CN 113808529 B CN113808529 B CN 113808529B CN 202111145282 A CN202111145282 A CN 202111145282A CN 113808529 B CN113808529 B CN 113808529B
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potential
time
source electrode
driving transistor
electrode potential
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CN113808529A (en
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窦维
黄泰钧
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN202111145282.0A priority Critical patent/CN113808529B/en
Priority to US17/610,715 priority patent/US20240054949A1/en
Priority to PCT/CN2021/123022 priority patent/WO2023050462A1/en
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3275—Details of drivers for data electrodes
    • G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/029—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel
    • G09G2320/0295—Improving the quality of display appearance by monitoring one or more pixels in the display panel, e.g. by monitoring a fixed reference pixel by monitoring each display pixel
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2340/00—Aspects of display data processing
    • G09G2340/16—Determination of a pixel data signal depending on the signal applied in the previous frame
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2011—Display of intermediate tones by amplitude modulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)

Abstract

The application discloses a pixel circuit and an external compensation method thereof, the external compensation method detects the real-time source electrode potential of a driving transistor through n times of iteration, the time for detecting the real-time source electrode potential of the driving transistor in each iteration is limited by artificially set single iteration detection time until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, and the threshold voltage detection efficiency of the driving transistor can be improved.

Description

Pixel circuit and external compensation method thereof
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a pixel circuit and an external compensation method thereof.
Background
In the conventional pixel circuit, the threshold voltage (Vth) of the driving transistor is detected, an initial gate-source voltage (Vgs) greater than Vth of the driving transistor is usually given, then the gate voltage of the driving transistor is kept unchanged by using a source following method, the source voltage of the driving transistor is raised to Vgs = Vth, the magnitude of current flowing through the driving transistor approaches zero at this time, and in this state, the source voltage of the driving transistor is sampled and Vth is further calculated, and the Vth obtained is superposed on the data voltage during display, so that Vth difference compensation is realized, and uneven luminance display caused by the Vth difference is eliminated.
However, as Vgs is decreased and parasitic capacitance of the detection line is much larger than the storage capacitance of a single pixel circuit, the source voltage of the driving transistor is increased more and more slowly, and thus, a long time is required for Vth difference detection of the driving transistor.
It should be noted that the above description of the background art is only for the convenience of clear and complete understanding of the technical solutions of the present application. The technical solutions referred to above are therefore not considered to be known to the person skilled in the art, merely because they appear in the background of the present application.
Disclosure of Invention
The application provides a pixel circuit and an external compensation method thereof, which are used for relieving the technical problem of low threshold voltage detection efficiency of a driving transistor.
In a first aspect, the present application provides an external compensation method for a pixel circuit, including: determining the target source electrode potential of a driving transistor in a pixel circuit and single iteration detection time; iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer; determining the (n-1) th compensation voltage based on the target source electrode potential and the real-time source electrode potential iteratively detected from the 1 st to the (n-1) th times; and compensating the driving transistor according to the compensation voltage at the (n-1) th time.
In some embodiments, the step of determining the (n-1) th compensation voltage based on the target source potential and the real-time source potentials detected in the (1) th to (n-1) th iterations comprises: determining the n-1 th class threshold voltage based on the difference value of the target source electrode potential and the real-time source electrode potential detected by the n-1 st iteration; and obtaining the compensation voltage of the (n-1) th time based on the accumulated sum of the initial class threshold voltage and the (n-1) th class threshold voltage.
In some embodiments, if the real-time source potential of the driving transistor in the nth iteration detection is equal to the target source potential, the potential of the (n + 1) th data signal is the same as the potential of the nth data signal.
In some embodiments, the data signal in the (n + 1) th and subsequent precharge stages and the iterative detection stage has the same potential as the data signal in the nth stage.
In some embodiments, the external compensation method further comprises: determining an initial grid electrode potential and an initial source electrode potential of the driving transistor; the difference between the initial gate potential and the initial source potential is configured to be greater than the threshold voltage of the drive transistor.
In some embodiments, the external compensation method further comprises: determining an initial gate potential of the driving transistor and an initial source potential of the driving transistor; the difference between the target source potential and the initial source potential is configured to be larger than zero.
In some of these embodiments, the target source potential is greater than or equal to 0V and less than or equal to 16V.
In some embodiments, the detection time of a single iteration is greater than or equal to 0 ms and less than or equal to 29 ms.
In some embodiments, the single iteration detection time is greater than or equal to 0.5 milliseconds and less than or equal to 20 milliseconds.
In a second aspect, the present application provides a pixel circuit, which includes a driving transistor and an external compensation module, where the external compensation module is electrically connected to the driving transistor and is configured to determine an initial gate potential of the driving transistor, an initial source potential of the driving transistor, a target source potential of the driving transistor, and a single iteration detection time, where a gate potential of the driving transistor is the same as a potential of a data signal within the same single iteration detection time; iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer; determining the (n-1) th compensation voltage based on the target source electrode potential and the real-time source electrode potential iteratively detected from the 1 st to the (n-1) th times; and superposing the (n-1) th compensation voltage to the potential of the (n-1) th data signal to generate an nth data signal, wherein the nth data signal is the data signal in the nth iterative detection.
According to the pixel circuit and the external compensation method thereof, the real-time source electrode potential of the driving transistor is detected through iteration n times, the time for detecting the real-time source electrode potential of the driving transistor in each iteration is limited by the artificially set single iteration detection time until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, and the threshold voltage detection efficiency of the driving transistor can be improved; and the (n-1) th compensation voltage is superposed to the potential of the (n-1) th data signal to generate an nth data signal, so that the threshold voltage compensation efficiency of the driving transistor can be improved, and the brightness display uniformity of the pixel circuit is improved.
Drawings
The technical solutions and other advantages of the present application will become apparent from the following detailed description of specific embodiments of the present application when taken in conjunction with the accompanying drawings.
Fig. 1 is a schematic flowchart of an external compensation method according to an embodiment of the present application.
Fig. 2 is a schematic circuit diagram of a pixel circuit according to an embodiment of the present disclosure.
FIG. 3 is a timing diagram of the pixel circuit shown in FIG. 2.
Fig. 4 is a schematic diagram of current characteristics of a real-time source potential according to an embodiment of the present disclosure.
Fig. 5 is a schematic diagram of a real-time source potential variation with time according to an embodiment of the present disclosure.
Fig. 6 is a schematic diagram illustrating that different driving transistors have different threshold voltages in the initial detection according to the embodiment of the present application.
Fig. 7 is a schematic diagram of the driving transistors having the same threshold voltage according to the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 to 7, as shown in fig. 1, the present embodiment provides an external compensation method for a pixel circuit, which includes the following steps:
step S10: the target source potential of the driving transistor in the pixel circuit and the single iteration detection time are determined.
Step S20: and iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer.
Step S30: and determining the (n-1) th compensation voltage based on the target source electrode potential and the real-time source electrode potentials detected from the 1 st iteration to the (n-1) th iteration.
Step S40: and compensating the driving transistor according to the compensation voltage at the (n-1) th time.
It can be understood that, in the external compensation method provided in this embodiment, the real-time source potential of the driving transistor is detected through iteration n times, and the time for detecting the real-time source potential of the driving transistor in each iteration is limited by the single iteration detection time that can be set manually until the real-time source potential of the driving transistor is equal to the target source potential, so that the threshold voltage detection efficiency of the driving transistor can be improved; and the (n-1) th compensation voltage is superposed to the potential of the (n-1) th data signal to generate an nth data signal, so that the threshold voltage compensation efficiency of the driving transistor can be improved, and the brightness display uniformity of the pixel circuit is improved.
As shown in fig. 2, in the pixel circuit, the drain of the driving transistor T1 is used for receiving a positive power supply signal ELVDD, the gate of the driving transistor T1 is electrically connected to one of the end of the storage capacitor Cst and the source/drain of the writing transistor T2, the other of the source/drain of the writing transistor T2 is used for receiving a DATA signal DATA, the gate of the writing transistor T2 is used for receiving a SCAN signal SCAN, the source of the driving transistor T1 is electrically connected to one of the source/drain of the sensing transistor T3, the other end of the storage capacitor Cst, and the anode of the light emitting device D1, the cathode of the light emitting device D1 is used for connecting a negative power supply signal ELVSS, the gate of the sensing transistor T3 is used for receiving a sensing signal SENSE, the other of the source/drain of the sensing transistor T3 is electrically connected to a sensing line SL, the sensing line SL is electrically connected to one end of the control switch K1 and one end of the control switch K2, the other end of the control switch K1 is electrically connected to the input end of the analog-to-digital converter 10, the output terminal of the analog-digital-to-digital converter 10 is used for receiving a control signal VREF, the output terminal of the corresponding control switch 30 is used for receiving the control signal DATA signal spk 2, and the control switch spp 2 is used for receiving the control signal VREF. The sensing line SL has a parasitic capacitor C1, and the capacitance of the parasitic capacitor C1 is much larger than that of the storage capacitor Cst.
The external compensation module may include an analog-to-digital converter 10, a controller 20, and a digital-to-analog converter 30, and may further include a control switch K1 and a control switch K2, and the external compensation module may be in the form of an integrated circuit or a chip, so that the area or volume of the external compensation module may be reduced, and the occupied space thereof may be reduced.
The light emitting device D1 may be but not limited to an OLED, a Mini-LED, or a Micro-LED.
The external compensation module can be used for determining the initial grid electrode potential of the driving transistor, the initial source electrode potential of the driving transistor, the target source electrode potential of the driving transistor and single iteration detection time, wherein the grid electrode potential of the driving transistor is the same as the potential of the data signal in the same single iteration detection time; iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer; determining the (n-1) th compensation voltage based on the target source electrode potential and the real-time source electrode potential iteratively detected from the 1 st to the (n-1) th times; and superposing the (n-1) th compensation voltage to the potential of the (n-1) th data signal to generate an nth data signal, wherein the nth data signal is the data signal in the nth iterative detection.
It can be understood that, in the external compensation module provided in this embodiment, the real-time source potential of the driving transistor is detected through n iterations, and the time for detecting the real-time source potential of the driving transistor each iteration is limited by the artificially settable single iteration detection time until the real-time source potential of the driving transistor is equal to the target source potential, so that the threshold voltage detection efficiency of the driving transistor can be improved; and the (n-1) th compensation voltage is superposed to the potential of the (n-1) th data signal to generate an nth data signal, so that the threshold voltage compensation efficiency of the driving transistor can be improved, and the brightness display uniformity of the pixel circuit is improved.
As shown in fig. 3, the external compensation method provided in the present application may include a plurality of iterative detection processes, for example, a first iterative detection process Fb0, a second iterative detection process Fb1 to an nth iterative detection process Fbn-1, where each iterative detection process may include the following stages:
pre-charge (Pre-charge stage): the SCAN signal SCAN, the SENSE signal SENSE and the control signal SPRE are all high potentials, and the write transistor T2, the SENSE transistor T3 and the control switch K2 are all turned on; writing the potential of the data signal to the gate potential Vg of the driving transistor, and writing the potential of the reference signal VREF to the real-time source potential Vs of the driving transistor, wherein Vg-Vs > Vth, and Vth is the threshold voltage of the driving transistor, so that the driving transistor can be ensured to be conducted.
Sensing (detection phase): the writing transistor T2 and the sensing transistor T3 maintain an on state, vg = VDATA; when the control signal Spre is at a low potential and the control switch K2 is turned off, the sensing line SL is in a Floating state, the parasitic capacitance C1 of the sensing line SL can be charged by the light emitting current flowing through the driving transistor T1 and the sensing transistor T3, and accordingly, the real-time source potential Vs of the driving transistor is raised.
Sampling (Sampling phase): when the TIME SENSE-TIME of the detection phase reaches the set single iteration detection TIME t, the sampling control signal SAMP turns on the control switch K1, and the analog-to-digital converter 10 samples the real-TIME source potential Vs of the driving transistor.
In the present application, since the single iteration detection time T can be freely set, the single iteration detection time T is greater than or equal to 0 ms and less than or equal to 29 ms, which is already less than the conventional 30 ms detection time, so that the threshold voltage detection efficiency of the driving transistor T1 is improved.
Specifically, the single-iteration detection time T may also be greater than or equal to 0.5 ms and less than or equal to 20 ms, which may further improve the threshold voltage detection efficiency of the driving transistor T1. For example, the detection time t of a single iteration may be 0.8 ms, 1 ms, 0.8 ms, 1.2 ms, 1.5 ms, 0.8 ms, 2 ms, 4.5 ms, 6 ms, 8 ms, 10 ms, etc. which are natural number of ms within the range.
Table 1 below shows the variation of each potential in each iteration of detection:
n VDATA Vs VTHS △V
Fb0 VDATA0＝Vg0 Vs0 VTHS0＝Vtrg-Vs0 △V0＝VTHS0
Fb1 VDATA1＝VDATA0+△V0 Vs1 VTHS1＝Vtrg-Vs1 △V1＝VTHS0+VTHS1
Fb2 VDATA2＝VDATA1+△V1 Vs2 VTHS2＝Vtrg-Vs2 △V2＝VTHS0+VTHS1+VTHS2
... ... ... ... ...
Fbn VDATAn＝VDATAn-1+△Vn-1 Vsn VTHSn＝Vtrg-Vsn △Vn＝VTHS0+VTHS1+VTHS2+...+VTHSn
where n is the number of iterative detections, VDATA is the potential of the data signal, vs is the real-time source potential of the driving transistor T1, VTHS is the threshold-like voltage of the driving transistor T1, Δ V is the compensation voltage, and Vtrg is the target source potential. Wherein, Δ Vn is the nth compensation voltage, and Δ Vn-1 is the n-1 th compensation voltage.
In the detection stage of the first iteration detection process Fb0, the 1 st gate potential Vg0 of the driving transistor T1 is the potential VDATA0 of the 1 st data signal, and the correspondingly obtained real-time source potential detected in the 1 st iteration is Vs0.
In the detection stage of the second iteration detection process Fb1, the 2 nd gate potential Vg1 of the driving transistor T1 is the potential VDATA1 of the 2 nd data signal, and the correspondingly obtained real-time source potential detected in the 2 nd iteration is Vs1. Wherein Vs1 is greater than Vs0, and VDATA1 is greater than VDATA0.
In the detection stage of the third iteration detection process Fb2, the 3 rd gate potential Vg2 of the driving transistor T1 is the potential VDATA2 of the 3 rd data signal, and the correspondingly obtained real-time source potential detected in the 3 rd iteration is Vs2. Wherein Vs2 is greater than Vs1, and VDATA2 is greater than VDATA1.
In the detection stage of the nth iteration detection process Fbn, the nth gate potential Vgn of the driving transistor T1 is the nth data signal potential VDATAn, and the correspondingly obtained real-time source potential detected in the nth iteration is Vsn.
Repeating the steps until the real-time source potential Vs of the driving transistor T1 is raised to the target source potential Vtrg, calculating to obtain VTHSn =0V, continuing iterative detection, and the gate potential Vg of the driving transistor T1 is not changed any more, so that VTHS0+ VTHS1+ VTHS2+. Command + VTHSn is Δ Vn, the difference between the compensation voltages of the driving transistors in different pixel circuits is the threshold voltage difference between different driving transistors, and superimposing the compensation voltage Δ Vn or Δ Vn-1 corresponding to each driving transistor on the corresponding data signal, so as to eliminate the brightness display non-uniformity caused by the threshold voltage difference between different driving transistors.
The hatched area shown in fig. 4 can represent the magnitude of the rise of the real-time source potential Vs of the driving transistor T1, and as the time T increases, the current i flowing through the driving transistor T1 decreases, for example, the current i corresponding to the time T1 is greater than the current i corresponding to the time T2, the current i corresponding to the time T2 is greater than the current i corresponding to the time tn, until at infinity in time, the current i approaches 0, and the real-time source potential Vs of the driving transistor T1 tends to stabilize.
As shown in fig. 5, as the time T increases, the real-time source potentials Vs0, vs1, and Vsn of the driving transistor T1 gradually rise until reaching the target source potential; in this process, the gate potentials Vg1, vgn of the driving transistor T1 are also gradually increasing.
As shown in fig. 6, in the first single iteration detection TIME SENSE-TIME, the detected real-TIME source potentials of the driving transistors are different due to the different threshold voltages of the driving transistors, for example, the real-TIME source potential of the driving transistor TFT1 is higher than the real-TIME source potential of the driving transistor TFT2, the real-TIME source potential of the driving transistor TFT2 is higher than the real-TIME source potential of the driving transistor TFT3, and the real-TIME source potential of the driving transistor TFT3 is higher than the real-TIME source potential of the driving transistor TFT4, so that one or more iterations of detection are required to detect the threshold voltage difference of each driving transistor completely.
As shown in fig. 7, as the number of iterative detections increases, the real-time source potentials of the driving transistors gradually approach to the same target source potential, and at this time, the obtained compensation voltages can fully reflect the threshold voltage differences of the driving transistors, so as to compensate the potentials of the data signals accessed by the corresponding pixel circuits with the compensation voltages, thereby eliminating the threshold voltage differences among the driving transistors and achieving the brightness display uniformity of the display panel.
Specifically, for example, the same display panel includes a first sub-pixel including a first driving transistor having a threshold voltage of a first threshold voltage Vth1 and a second sub-pixel including a second driving transistor having a threshold voltage of a second threshold voltage Vth2. After multiple times of iterative detection, until the real-time source electrode potential of the first driving transistor and the real-time source electrode potential of the second driving transistor are both raised to the target source electrode potential, a compensation voltage delta V1 corresponding to the first driving transistor and a compensation voltage delta V2 corresponding to the second driving transistor are obtained, and at the moment, the difference value between the compensation voltage delta V1 and the compensation voltage delta V2 is the difference value between the first threshold voltage Vth1 and the second threshold voltage Vth2.
Then according to the formula of the luminous current as shown in the following formula one:
Ids＝μ*W*Cox*(Vgs-Vth) 2 2L 1
Where Ids is the light emission current flowing through the driving transistor, μ is the mobility of the driving transistor, W is the channel width of the driving transistor, L is the channel length of the driving transistor, cox is the dielectric constant, vgs is the gate-source voltage difference of the driving transistor, and Vth is the threshold voltage of the driving transistor, the light emission current Ids1 of the first driving transistor can be obtained as follows:
Ids1＝μ*W*Cox*(Vg+ΔV1-Vs-Vth1) 2 2L (two)
Similarly, the light emission current Ids2 of the second drive transistor can be obtained as follows:
Ids2＝μ*W*Cox*(Vg+ΔV2-Vs-Vth2) 2 2L (three)
Based on formula two and formula three, it can be known that: the gate potential Vg of the first driving transistor and the real-time source potential Vs of the first driving transistor are respectively corresponding to the gate potential Vg of the second driving transistor and the real-time source potential Vs of the second driving transistor, so when Δ V1- Δ V2= Vth1-Vth2, that is, Δ V1-Vth1=Δv2-Vth2, at this time, the light emitting current Ids1 of the first driving transistor is the same as the light emitting current Ids2 of the second driving transistor, and the display luminance of the first sub-pixel is the same as the display luminance of the second sub-pixel.
In one embodiment, the target source potential is greater than or equal to 0V and less than or equal to 16V. For example, the target source potential may be 5V, 8V, 12V, 15V, or the like. With the increase of the target source voltage, the charging rate of the parasitic capacitor C1 is faster, so that the single iteration detection time can be reduced.
In one embodiment, the step of determining the (n-1) th compensation voltage based on the target source potential and the real-time source potentials detected in the (1) th to (n-1) th iterations comprises: determining the n-1 th class threshold voltage based on the difference value of the target source electrode potential and the real-time source electrode potential iteratively detected for the n-1 st time; and obtaining the compensation voltage of the (n-1) th time based on the accumulated sum of the initial class threshold voltage and the (n-1) th class threshold voltage.
In one embodiment, if the real-time source potential of the driving transistor in the nth iteration detection is equal to the target source potential, the potential of the (n + 1) th data signal is the same as the potential of the nth data signal.
In one embodiment, the data signal in the (n + 1) th and subsequent precharge stages and the iterative detection stage has the same potential as the data signal in the nth stage.
In one embodiment, the external compensation method further comprises: determining an initial gate potential of the drive transistor, an initial source potential of the drive transistor; the difference between the initial gate potential and the initial source potential is configured to be greater than the threshold voltage of the drive transistor. The initial gate potential may be a gate potential in the 1 st iterative detection, and the initial source potential may be a real-time source potential in the 1 st iterative detection.
In one embodiment, the external compensation method further comprises: determining an initial gate potential of the drive transistor, an initial source potential of the drive transistor; the difference between the target source potential and the initial source potential is configured to be larger than zero.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The pixel circuit and the external compensation method thereof provided by the embodiment of the present application are described in detail above, and a specific example is applied in the description to explain the principle and the implementation of the present application, and the description of the above embodiment is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.

Claims (9)

1. An external compensation method for a pixel circuit, comprising:
determining a target source electrode potential of a driving transistor in the pixel circuit and single iteration detection time;
iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer;
determining the compensation voltage of the (n-1) th time according to the target source electrode potential and the real-time source electrode potential iteratively detected from the 1 st time to the (n-1) th time;
compensating the driving transistor according to the (n-1) th compensation voltage;
wherein, the step of determining the compensation voltage for the (n-1) th time according to the target source electrode potential and the real-time source electrode potential iteratively detected from the (1) st time to the (n-1) th time comprises the following steps:
determining an n-1 th class threshold voltage according to the difference value between the target source electrode potential and the real-time source electrode potential iteratively detected for the n-1 st time, wherein the class threshold voltage is the difference between the target source electrode potential and the corresponding real-time source electrode potential;
and obtaining the compensation voltage of the (n-1) th time according to the accumulated sum of the initial class threshold voltage and the (n-1) th class threshold voltage.
2. The external compensation method as claimed in claim 1, wherein if the real-time source potential of the driving transistor in the nth iteration detection is equal to the target source potential, the potential of the (n + 1) th data signal is the same as the potential of the nth data signal.
3. The external compensation method as claimed in claim 2, wherein the potentials of the data signals in the (n + 1) th and subsequent pre-charge stages and the iterative detection stage are the same as the potential of the nth data signal.
4. The external compensation method of claim 1, further comprising:
determining an initial gate potential of the drive transistor, an initial source potential of the drive transistor;
configuring a difference between the initial gate potential and the initial source potential to be greater than a threshold voltage of the drive transistor.
5. The external compensation method of claim 1, further comprising:
determining an initial gate potential of the drive transistor, an initial source potential of the drive transistor;
configuring a difference between the target source potential and the initial source potential to be greater than zero.
6. The external compensation method of claim 5, wherein the target source potential is greater than or equal to 0V and less than or equal to 16V.
7. The external compensation method of any one of claims 1 to 6, wherein the single iteration detection time is greater than or equal to 0 ms and less than or equal to 29 ms.
8. The external compensation method of claim 7, wherein the single iteration detection time is greater than or equal to 0.5 ms and less than or equal to 20 ms.
9. A pixel circuit, comprising:
a drive transistor; and
the external compensation module is electrically connected with the driving transistor and is used for determining the initial grid electrode potential of the driving transistor, the initial source electrode potential of the driving transistor, the target source electrode potential of the driving transistor and single iteration detection time, wherein the grid electrode potential of the driving transistor is the same as the potential of a data signal in the same single iteration detection time; iteratively detecting the real-time source electrode potential of the driving transistor for n times until the real-time source electrode potential of the driving transistor is equal to the target source electrode potential, wherein n is a positive integer; determining the (n-1) th compensation voltage based on the target source electrode potential and the real-time source electrode potential detected from the 1 st iteration to the (n-1) th iteration; superposing the (n-1) th compensation voltage to the potential of the (n-1) th data signal to generate an nth data signal, wherein the nth data signal is a data signal in nth iterative detection;
determining an n-1 th class threshold voltage according to the difference value between the target source electrode potential and the real-time source electrode potential iteratively detected for the (n-1) th time, wherein the class threshold voltage is the difference between the target source electrode potential and the corresponding real-time source electrode potential; and obtaining the compensation voltage of the (n-1) th time according to the accumulated sum of the initial class threshold voltage and the (n-1) th class threshold voltage.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5374976B2 (en) * 2008-09-04 2013-12-25 セイコーエプソン株式会社 Pixel circuit driving method, light emitting device, and electronic apparatus
CN104821152B (en) * 2015-05-28 2017-09-01 深圳市华星光电技术有限公司 Compensate the method and system of AMOLED voltage drops
CN105047137B (en) * 2015-09-09 2017-05-31 深圳市华星光电技术有限公司 AMOLED real-time compensation systems
CN105513536B (en) * 2016-02-02 2018-06-29 京东方科技集团股份有限公司 A kind of pixel driver chip, method and dot structure
CN106531078A (en) * 2016-10-20 2017-03-22 友达光电（昆山）有限公司 Compensation method of pixel unit
KR102617966B1 (en) * 2016-12-28 2023-12-28 엘지디스플레이 주식회사 Electroluminescent Display Device and Driving Method thereof
CN106935192B (en) * 2017-05-12 2019-04-02 京东方科技集团股份有限公司 Pixel circuit and its driving method, display device
CN107093403B (en) * 2017-06-30 2019-03-15 深圳市华星光电技术有限公司 The compensation method of pixel-driving circuit for OLED display panel
CN109658880B (en) * 2017-10-12 2021-10-08 咸阳彩虹光电科技有限公司 Pixel compensation method, pixel compensation circuit and display
CN109599060B (en) * 2019-01-11 2020-12-18 京东方科技集团股份有限公司 Pixel compensation method, pixel compensation system and display device
US11250780B2 (en) * 2019-08-15 2022-02-15 Samsung Display Co., Ltd. Estimation of pixel compensation coefficients by adaptation
CN110473501B (en) * 2019-08-29 2021-02-02 上海天马有机发光显示技术有限公司 Compensation method of display panel
CN110827763B (en) * 2019-11-07 2021-07-06 深圳市华星光电半导体显示技术有限公司 Pixel circuit, driving method thereof and display device
KR20210086010A (en) * 2019-12-31 2021-07-08 엘지디스플레이 주식회사 Display device and driving method of the same
CN112071265A (en) * 2020-09-15 2020-12-11 武汉华星光电半导体显示技术有限公司 Pixel compensation circuit and display panel
CN112201207B (en) * 2020-09-30 2021-11-12 合肥维信诺科技有限公司 Driving method of pixel circuit, pixel circuit and display device
CN112365848A (en) * 2020-12-02 2021-02-12 深圳市华星光电半导体显示技术有限公司 Pixel circuit and display panel
CN113284466B (en) * 2021-05-26 2022-04-08 深圳市华星光电半导体显示技术有限公司 Pixel circuit and display panel
CN113284462B (en) * 2021-05-31 2022-06-10 深圳市华星光电半导体显示技术有限公司 Pixel compensation circuit, method and display panel

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