CN113773072A - Processing technology of surface-mounted ceramic thermistor substrate - Google Patents
Processing technology of surface-mounted ceramic thermistor substrate Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 137
- 239000000919 ceramic Substances 0.000 title claims abstract description 41
- 238000012545 processing Methods 0.000 title claims abstract description 37
- 238000005516 engineering process Methods 0.000 title claims abstract description 32
- 238000005245 sintering Methods 0.000 claims abstract description 168
- 239000002994 raw material Substances 0.000 claims abstract description 67
- 238000005498 polishing Methods 0.000 claims abstract description 55
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- 238000003825 pressing Methods 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims abstract description 6
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- 239000012188 paraffin wax Substances 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 36
- 238000003756 stirring Methods 0.000 claims description 33
- 239000000047 product Substances 0.000 claims description 23
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 14
- 239000011265 semifinished product Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 claims description 7
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- 238000004519 manufacturing process Methods 0.000 claims description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229910000018 strontium carbonate Inorganic materials 0.000 claims description 7
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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Abstract
The invention provides a processing technology of a surface mount type ceramic thermistor substrate, and belongs to the technical field of new materials. It has solved prior art and has had the poor problem of stability. The processing technology of the chip type ceramic thermistor substrate comprises the following steps: A. preparing raw materials; B. mixing; C. pressing into a blank; D. sintering; E. polishing; F. and (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range. The processing technology of the chip ceramic thermistor substrate has high stability.
Description
Technical Field
The invention belongs to the technical field of new materials, and relates to a processing technology of a surface mount type ceramic thermistor substrate.
Background
Thermal sensitive ceramics are a class of materials whose resistivity changes significantly with temperature. The method can be used for manufacturing temperature sensors, temperature measurement, line temperature compensation, frequency stabilization and the like.
The resistance substrate is an important component of the whole patch type ceramic thermistor, various component raw materials are prepared in advance in the existing manufacturing process of the resistance substrate, the component raw materials are fully mixed and then are pressed into a blank, and then the blank is sintered through a single temperature value.
It can be seen that, because the temperature is relatively high in the sintering process, the blank is directly sintered in a high-temperature environment, and the blank is easily damaged, so that the stability of the blank is relatively poor.
Chinese patent publication No. CN102643084B discloses a composition for preparing an NTC thermistor chip and an NTC thermistor prepared therefrom, belonging to the field of thermistors.
The components and the content of the patent composition are Mn3O4665-670 parts by weight, Fe2O3110-115 parts by weight, SiO216-20 parts by weight and NiO200-205 parts by weight, all of the components are nano powder, the purity is chemical purity, and the chip slurry is prepared by the following steps: weighing the raw materials according to the components and the content, uniformly mixing the raw materials, pouring the mixture into a ball mill, adding water, grinding for 30-50 hours, dehydrating and drying the ground raw materials, adding an adhesive into the dried raw materials, and uniformly stirring to form the chip slurry.
Meanwhile, the patent also discloses a method for manufacturing the NTC thermistor by using the chip slurry. By adjusting the proportion of each component in the composition for preparing the NTC thermistor chip, the service life of the resistor is prolonged, the measurement precision of the resistor is improved, the temperature can be quickly measured, and the use requirement of high-temperature equipment can be better met.
However, since the sintering is performed at a single temperature during the sintering operation, the yield after sintering is low, and the stability is relatively poor
Disclosure of Invention
The invention aims to provide a processing technology of a chip ceramic thermistor substrate with high stability aiming at the problems in the prior art.
The purpose of the invention can be realized by the following technical scheme:
a processing technology of a surface mount type ceramic thermistor substrate is characterized by comprising the following steps:
A. preparing raw materials: selecting 510-610 parts by weight of barium carbonate, 100-120 parts by weight of strontium carbonate, 3-5 parts by weight of yttrium oxide, 3-5 parts by weight of silicon oxide, 300-320 parts by weight of titanium oxide and 3-5 parts by weight of manganese oxide as component raw materials for later use;
B. mixing: stirring and mixing the standby component raw materials;
C. pressing into a blank: feeding the fully mixed component raw materials into a pressing device, and pressing the component raw materials into a flaky blank by high pressure;
D. and (3) sintering: putting the blank into a crucible, putting the crucible with the blank into a sintering furnace for sintering, and obtaining a flaky semi-finished product after sintering;
E. polishing: polishing the surface of the semi-finished product to obtain a finished product resistance substrate with smooth transition corners and high surface smoothness;
F. and (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range.
The processing technology of the chip type ceramic thermistor substrate selects the component raw materials according to the set weight parts, and then fully mixes the component raw materials through mixing treatment.
The raw materials are punched by the existing powder pressing equipment to obtain a flaky blank.
The blank is preliminarily formed after being sintered, and the surface quality of the finished product of the resistance substrate can be effectively improved after the subsequent polishing operation.
And finally, after a pressure resistance test, removing unqualified products, and bagging the finished electronic substrates meeting the standard after the test.
Because the component raw materials are selected in the processing technology of the chip type ceramic thermistor substrate, the prepared and formed resistor substrate has higher strength and surface quality.
In the processing technology of the chip ceramic thermistor substrate, 550-600 parts by weight of barium carbonate, 110-120 parts by weight of strontium carbonate, 3-5 parts by weight of yttrium oxide, 3-5 parts by weight of silicon oxide, 310-320 parts by weight of titanium oxide and 3-5 parts by weight of manganese oxide are selected as component raw materials in the step A for standby;
in the processing technology of the chip type ceramic thermistor substrate, the component raw materials for standby in the step B are put into a stirring cylinder, then the component raw materials are fully stirred by a stirrer in the stirring cylinder, and paraffin is continuously added into the stirring cylinder in the stirring process.
The paraffin is used as a binder, and the paraffin is fully mixed with the raw materials of the components after stirring. In the next pressing procedure, the blank can be formed more stably.
In the processing technology of the chip ceramic thermistor substrate, the weight part of the paraffin is 9-15.
In the processing technology of the chip type ceramic thermistor substrate, in the step B, paraffin is continuously added into the stirring cylinder at the initial stirring stage, and the adding time of the paraffin is 1/3-1/2 of the stirring time.
The paraffin is less in input amount, and the parameter performance of the resistance substrate is not influenced. Meanwhile, the paraffin wax and the component raw materials can be fully mixed together by adding the paraffin wax and the component raw materials within the time range.
In the above processing technology of the chip type ceramic thermistor substrate, the sintering operation in the step D is divided into a multi-stage sintering treatment: the sintering temperature of the first sintering time is 350-390 ℃ in 10-20 minutes, the sintering temperature of the second sintering time is 400-450 ℃ in 10-20 minutes, the sintering temperature of the third sintering time is 450-550 ℃ in 10-20 minutes, the sintering temperature of the fourth sintering time is 750-760 ℃ in 10-20 minutes, the sintering temperature of the fifth sintering time is 950-960 ℃ in 10-20 minutes, the sintering temperature of the sixth sintering time is 1100-1150 ℃ in 10-20 minutes, the sintering temperature of the seventh sintering time is 1195-1120 ℃ in 10-20 minutes, the sintering temperature of the eighth sintering time is 1240-1290 ℃ in 10-20 minutes, the sintering temperature of the ninth sintering time is 1070-1050 ℃ in 10-20 minutes, and the sintering temperature of the tenth sintering time is 910-900 ℃ in 10-20 minutes.
The sintering operation is divided into ten steps, the sintering time of each step is consistent, but the sintering temperature is inconsistent.
That is, the first section has the lowest sintering temperature, the second, third, fourth, fifth and sixth sections have successively higher sintering temperatures, and the seventh section has successively lower sintering temperatures.
The sintering method can enable the blank entering the sintering process to have an adaptive process, the blank is not easy to damage during low-temperature sintering, the blank can be stably and slowly sintered after the temperature is gradually increased, and finally the sintering temperature is sequentially decreased, so that the resistance substrate is ensured to be stably sintered.
In the processing technology of the chip type ceramic thermistor substrate, the polishing process in the step E includes side polishing and edge polishing, and the edge polishing is performed after the side polishing is completed.
The side part is polished to enable the surface of the resistor substrate to be smooth and clean, and the edge structure at the edge of the resistor substrate can be eliminated after the side part is polished.
In the processing technology of the chip type ceramic thermistor substrate, the step E of polishing the side part is to put a plurality of resistor substrates into a die, manually polish the resistor substrates through sand paper, turn over the resistor substrates after polishing one side of the resistor substrates is finished, and polish the other side of the resistor substrates.
In the processing technology of the chip type ceramic thermistor substrate, in the step E, the edge polishing is to put the resistor substrate with the polished side part into a vibration hopper and spray water mist into the vibration hopper at the same time.
In the processing technology of the surface mount type ceramic thermistor substrate, the vibration hopper is internally provided with a blanking channel for enabling the resistor substrate to smoothly translate along the vibration hopper, the width of the blanking channel is matched with the thickness of the resistor substrate, the resistor substrate is in a vertical state, and the lower edge of the resistor substrate is embedded in the blanking channel.
Because the thickness of resistance substrate and the width phase-match of unloading passageway, consequently resistance substrate keeps erect the state among the transportation process, because the unloading passageway is located the vibration hopper, can polish resistance substrate border in the vibration process, the effective angular structure who eliminates resistance substrate border. Certainly, the sprayed water mist can not only avoid powder diffusion in the polishing process, but also play a role in proper lubrication, and improve the polishing stability.
Compared with the prior art, the processing technology of the chip ceramic thermistor substrate adopts a specific component formula, so that the prepared resistor substrate has higher strength, good pressure resistance and higher stability.
Meanwhile, the processing technology adopts multiple sections of different temperatures to sinter the blank, and the sintering molding stability is high, so that the processing technology has high practical value.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It will be understood that when an element is referred to as being "mounted on" another element, it can be directly mounted on the other element or intervening elements may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. When an element is referred to as being "secured to" another element, it can be directly secured to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "or/and" includes any and all combinations of one or more of the associated listed items.
Example one
The processing technology of the chip type ceramic thermistor substrate comprises the following steps:
A. preparing raw materials: selecting 510 parts by weight of barium carbonate, 100 parts by weight of strontium carbonate, 3 parts by weight of yttrium oxide, 3 parts by weight of silicon oxide, 300 parts by weight of titanium oxide and 3 parts by weight of manganese oxide as component raw materials for later use;
B. mixing: stirring and mixing the standby component raw materials;
in this embodiment, the component raw materials for use in step B are put into the mixing drum, and then fully stirred by the stirrer in the mixing drum, and paraffin is continuously added into the mixing drum during the stirring process.
The weight portion of the paraffin is 9.
And C, continuously feeding the paraffin into the stirring cylinder at the initial stirring stage in the step B, wherein the feeding time of the paraffin is 1/3 of the stirring time.
C. Pressing into a blank: feeding the fully mixed component raw materials into a pressing device, and pressing the component raw materials into a flaky blank by high pressure;
D. and (3) sintering: putting the blank into a crucible, putting the crucible with the blank into a sintering furnace for sintering, and obtaining a flaky semi-finished product after sintering;
the sintering operation in the step D is divided into a plurality of sections of sintering treatment: the first-stage sintering time is 10 minutes, the sintering temperature is 350 ℃, the second-stage sintering time is 10 minutes, the sintering temperature is 400 ℃, the third-stage sintering time is 10 minutes, the sintering temperature is 450 ℃, the fourth-stage sintering time is 10 minutes, the sintering temperature is 750 ℃, the sintering temperature is 950 ℃ for the fifth-stage sintering time, the sintering temperature is 1100 ℃ for the sixth-stage sintering time, the sintering temperature is 1195 ℃ for the seventh-stage sintering time is 10 minutes, the sintering temperature is 1240 ℃ for the eighth-stage sintering time, the sintering temperature is 1070 ℃ for the ninth-stage sintering time, and the sintering temperature is 910 ℃ for the tenth-stage sintering time.
E. Polishing: polishing the surface of the semi-finished product to obtain a finished product resistance substrate with smooth transition corners and high surface smoothness;
and E, polishing the side part and the edge, and polishing the edge after the side part is polished.
And E, polishing the side part, namely putting a plurality of resistance substrates into a die, manually polishing the resistance substrates through abrasive paper, and polishing the other side of the resistance substrates by turning the resistance substrates after polishing one side of the resistance substrates is finished.
And E, polishing the edge in the step E, namely putting the resistor substrate with the polished side part into a vibration hopper, and spraying water mist into the vibration hopper at the same time.
The vibrating hopper is internally provided with a blanking channel for enabling the resistance substrate to smoothly translate along the vibrating hopper, the width of the blanking channel is matched with the thickness of the resistance substrate, the resistance substrate is in a vertical state, and the lower edge of the resistance substrate is embedded in the blanking channel.
F. And (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range.
The processing technology of the chip type ceramic thermistor substrate selects the component raw materials according to the set weight parts, and then fully mixes the component raw materials through mixing treatment.
The raw materials are punched by the existing powder pressing equipment to obtain a flaky blank.
The blank is preliminarily formed after being sintered, and the surface quality of the finished product of the resistance substrate can be effectively improved after the subsequent polishing operation.
And finally, after a pressure resistance test, removing unqualified products, and bagging the finished electronic substrates meeting the standard after the test.
Because the component raw materials are selected in the processing technology of the chip type ceramic thermistor substrate, the prepared and formed resistor substrate has higher strength and surface quality.
And the paraffin is used as a binder, and the paraffin is fully mixed with the component raw materials after stirring. In the next pressing procedure, the blank can be formed more stably.
The paraffin is less in input amount, and the parameter performance of the resistance substrate is not influenced. Meanwhile, the paraffin wax and the component raw materials can be fully mixed together by adding the paraffin wax and the component raw materials within the time range.
The sintering operation is divided into ten steps, the sintering time of each step is consistent, but the sintering temperature is inconsistent.
That is, the first section has the lowest sintering temperature, the second, third, fourth, fifth and sixth sections have successively higher sintering temperatures, and the seventh section has successively lower sintering temperatures.
The sintering method can enable the blank entering the sintering process to have an adaptive process, the blank is not easy to damage during low-temperature sintering, the blank can be stably and slowly sintered after the temperature is gradually increased, and finally the sintering temperature is sequentially decreased, so that the resistance substrate is ensured to be stably sintered.
The resistance substrate is made of oxide ceramic, the high-temperature oxidation defect of the nickel-chromium wire is avoided, the infrared tube is not easy to break, and the service life is long. The high-voltage switch can be normally used under low voltage (3-36V) and high voltage (110-380V), and has high applicability.
The low-voltage PTC element is suitable for various low-voltage heaters, instrument low-temperature compensation and automobile supply heaters.
② the high-voltage PTC element is suitable for heating the following electrical equipment: shoe dryer, hot melt glue gun, electric cooker, electric heating boots, electric heating mosquito dispeller, steam comb, steam generator, humidifier, hair curler, vending machine, air curtain machine, hand warmer, tea dryer, and skin care device.
Example two
The processing technology of the chip type ceramic thermistor substrate comprises the following steps:
A. preparing raw materials: selecting 610 parts by weight of barium carbonate, 120 parts by weight of strontium carbonate, 5 parts by weight of yttrium oxide, 5 parts by weight of silicon oxide, 320 parts by weight of titanium oxide and 3-5 parts by weight of manganese oxide as component raw materials for later use;
B. mixing: stirring and mixing the standby component raw materials;
in this embodiment, the component raw materials for use in step B are put into the mixing drum, and then fully stirred by the stirrer in the mixing drum, and paraffin is continuously added into the mixing drum during the stirring process.
The weight portion of the paraffin is 15.
And C, continuously feeding the paraffin into the stirring cylinder at the initial stirring stage in the step B, wherein the feeding time of the paraffin is 1/2 of the stirring time.
C. Pressing into a blank: feeding the fully mixed component raw materials into a pressing device, and pressing the component raw materials into a flaky blank by high pressure;
D. and (3) sintering: putting the blank into a crucible, putting the crucible with the blank into a sintering furnace for sintering, and obtaining a flaky semi-finished product after sintering;
the sintering operation in the step D is divided into a plurality of sections of sintering treatment: the first-stage sintering time is 390 ℃ of sintering temperature in 20 minutes, the second-stage sintering time is 450 ℃ of sintering temperature in 20 minutes, the third-stage sintering time is 550 ℃ of sintering temperature in 20 minutes, the fourth-stage sintering time is 760 ℃ of sintering temperature in 20 minutes, the fifth-stage sintering time is 960 ℃ of sintering temperature in 20 minutes, the sixth-stage sintering time is 1150 ℃ of sintering temperature in 20 minutes, the seventh-stage sintering time is 1120 ℃ of sintering temperature in 20 minutes, the eighth-stage sintering time is 1290 ℃ of sintering temperature in 20 minutes, the ninth-stage sintering time is 1050 ℃ of sintering temperature in 20 minutes, and the tenth-stage sintering time is 900 ℃ of sintering temperature in 20 minutes.
E. Polishing: polishing the surface of the semi-finished product to obtain a finished product resistance substrate with smooth transition corners and high surface smoothness;
and E, polishing the side part and the edge, and polishing the edge after the side part is polished.
And E, polishing the side part, namely putting a plurality of resistance substrates into a die, manually polishing the resistance substrates through abrasive paper, and polishing the other side of the resistance substrates by turning the resistance substrates after polishing one side of the resistance substrates is finished.
And E, polishing the edge in the step E, namely putting the resistor substrate with the polished side part into a vibration hopper, and spraying water mist into the vibration hopper at the same time.
The vibrating hopper is internally provided with a blanking channel for enabling the resistance substrate to smoothly translate along the vibrating hopper, the width of the blanking channel is matched with the thickness of the resistance substrate, the resistance substrate is in a vertical state, and the lower edge of the resistance substrate is embedded in the blanking channel.
F. And (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range.
The processing technology of the chip type ceramic thermistor substrate selects the component raw materials according to the set weight parts, and then fully mixes the component raw materials through mixing treatment.
The raw materials are punched by the existing powder pressing equipment to obtain a flaky blank.
The blank is preliminarily formed after being sintered, and the surface quality of the finished product of the resistance substrate can be effectively improved after the subsequent polishing operation.
And finally, after a pressure resistance test, removing unqualified products, and bagging the finished electronic substrates meeting the standard after the test.
Because the component raw materials are selected in the processing technology of the chip type ceramic thermistor substrate, the prepared and formed resistor substrate has higher strength and surface quality.
And the paraffin is used as a binder, and the paraffin is fully mixed with the component raw materials after stirring. In the next pressing procedure, the blank can be formed more stably.
The paraffin is less in input amount, and the parameter performance of the resistance substrate is not influenced. Meanwhile, the paraffin wax and the component raw materials can be fully mixed together by adding the paraffin wax and the component raw materials within the time range.
The sintering operation is divided into ten steps, the sintering time of each step is consistent, but the sintering temperature is inconsistent.
That is, the first section has the lowest sintering temperature, the second, third, fourth, fifth and sixth sections have successively higher sintering temperatures, and the seventh section has successively lower sintering temperatures.
The sintering method can enable the blank entering the sintering process to have an adaptive process, the blank is not easy to damage during low-temperature sintering, the blank can be stably and slowly sintered after the temperature is gradually increased, and finally the sintering temperature is sequentially decreased, so that the resistance substrate is ensured to be stably sintered.
EXAMPLE III
The processing technology of the chip type ceramic thermistor substrate comprises the following steps:
A. preparing raw materials: selecting 550 parts by weight of barium carbonate, 110 parts by weight of strontium carbonate, 4 parts by weight of yttrium oxide, 4 parts by weight of silicon oxide, 310 parts by weight of titanium oxide and 3-5 parts by weight of manganese oxide as component raw materials for later use;
B. mixing: stirring and mixing the standby component raw materials;
in this embodiment, the component raw materials for use in step B are put into the mixing drum, and then fully stirred by the stirrer in the mixing drum, and paraffin is continuously added into the mixing drum during the stirring process.
The weight portion of the paraffin is 12.
And C, continuously feeding the paraffin into the stirring cylinder at the initial stirring stage in the step B, wherein the feeding time of the paraffin is 1/3 of the stirring time.
C. Pressing into a blank: feeding the fully mixed component raw materials into a pressing device, and pressing the component raw materials into a flaky blank by high pressure;
D. and (3) sintering: putting the blank into a crucible, putting the crucible with the blank into a sintering furnace for sintering, and obtaining a flaky semi-finished product after sintering;
the sintering operation in the step D is divided into a plurality of sections of sintering treatment: the first-stage sintering time is 13 minutes, the sintering temperature is 360 ℃, the second-stage sintering time is 13 minutes, the sintering temperature is 440 ℃, the third-stage sintering time is 13 minutes, the sintering temperature is 500 ℃, the fourth-stage sintering time is 13 minutes, the sintering temperature is 755 ℃, the fifth-stage sintering time is 13 minutes, the sintering temperature is 955 ℃, the sixth-stage sintering time is 1130 ℃, the seventh-stage sintering time is 13 minutes, the sintering temperature is 1197 ℃, the eighth-stage sintering time is 13 minutes, the sintering temperature is 1060 ℃ for nine stages, and the sintering temperature is 905 ℃ for ten stages.
E. Polishing: polishing the surface of the semi-finished product to obtain a finished product resistance substrate with smooth transition corners and high surface smoothness;
and E, polishing the side part and the edge, and polishing the edge after the side part is polished.
And E, polishing the side part, namely putting a plurality of resistance substrates into a die, manually polishing the resistance substrates through abrasive paper, and polishing the other side of the resistance substrates by turning the resistance substrates after polishing one side of the resistance substrates is finished.
And E, polishing the edge in the step E, namely putting the resistor substrate with the polished side part into a vibration hopper, and spraying water mist into the vibration hopper at the same time.
The vibrating hopper is internally provided with a blanking channel for enabling the resistance substrate to smoothly translate along the vibrating hopper, the width of the blanking channel is matched with the thickness of the resistance substrate, the resistance substrate is in a vertical state, and the lower edge of the resistance substrate is embedded in the blanking channel.
F. And (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range.
The processing technology of the chip type ceramic thermistor substrate selects the component raw materials according to the set weight parts, and then fully mixes the component raw materials through mixing treatment.
The raw materials are punched by the existing powder pressing equipment to obtain a flaky blank.
The blank is preliminarily formed after being sintered, and the surface quality of the finished product of the resistance substrate can be effectively improved after the subsequent polishing operation.
And finally, after a pressure resistance test, removing unqualified products, and bagging the finished electronic substrates meeting the standard after the test.
Because the component raw materials are selected in the processing technology of the chip type ceramic thermistor substrate, the prepared and formed resistor substrate has higher strength and surface quality.
And the paraffin is used as a binder, and the paraffin is fully mixed with the component raw materials after stirring. In the next pressing procedure, the blank can be formed more stably.
The paraffin is less in input amount, and the parameter performance of the resistance substrate is not influenced. Meanwhile, the paraffin wax and the component raw materials can be fully mixed together by adding the paraffin wax and the component raw materials within the time range.
The sintering operation is divided into ten steps, the sintering time of each step is consistent, but the sintering temperature is inconsistent.
That is, the first section has the lowest sintering temperature, the second, third, fourth, fifth and sixth sections have successively higher sintering temperatures, and the seventh section has successively lower sintering temperatures.
The sintering method can enable the blank entering the sintering process to have an adaptive process, the blank is not easy to damage during low-temperature sintering, the blank can be stably and slowly sintered after the temperature is gradually increased, and finally the sintering temperature is sequentially decreased, so that the resistance substrate is ensured to be stably sintered.
The features of the above-described embodiments may be arbitrarily combined, and for the sake of brevity, all possible combinations of the features in the above-described embodiments are not described, but should be construed as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the features.
It should be understood by those skilled in the art that the above embodiments are only for illustrating the present invention and are not to be used as a limitation of the present invention, and that suitable changes and modifications of the above embodiments are within the scope of the claimed invention as long as they are within the spirit and scope of the present invention.
Claims (10)
1. A processing technology of a surface mount type ceramic thermistor substrate is characterized by comprising the following steps:
A. preparing raw materials: selecting 510-610 parts by weight of barium carbonate, 100-120 parts by weight of strontium carbonate, 3-5 parts by weight of yttrium oxide, 3-5 parts by weight of silicon oxide, 300-320 parts by weight of titanium oxide and 3-5 parts by weight of manganese oxide as component raw materials for later use;
B. mixing: stirring and mixing the standby component raw materials;
C. pressing into a blank: feeding the fully mixed component raw materials into a pressing device, and pressing the component raw materials into a flaky blank by high pressure;
D. and (3) sintering: putting the blank into a crucible, putting the crucible with the blank into a sintering furnace for sintering, and obtaining a flaky semi-finished product after sintering;
E. polishing: polishing the surface of the semi-finished product to obtain a finished product resistance substrate with smooth transition corners and high surface smoothness;
F. and (3) pressure resistance detection: and (3) introducing a set voltage to the finished product resistance substrate, and detecting whether the finished product resistance substrate can be normally used within the set voltage range.
2. The process for manufacturing a surface-mounted ceramic thermistor substrate according to claim 1, wherein in step a, 550 to 600 parts by weight of barium carbonate, 110 to 120 parts by weight of strontium carbonate, 3 to 5 parts by weight of yttrium oxide, 3 to 5 parts by weight of silicon oxide, 310 to 320 parts by weight of titanium oxide and 3 to 5 parts by weight of manganese oxide are selected as raw materials for standby.
3. The process for processing the chip-type ceramic thermistor substrate according to claim 2, wherein the component materials prepared in step B are put into a mixing drum, and then fully stirred by a stirrer in the mixing drum, and paraffin is continuously added into the mixing drum during the stirring process.
4. The process for processing the chip-type ceramic thermistor substrate according to claim 3, wherein the paraffin is 9 to 15 parts by weight.
5. The process for manufacturing a chip-type ceramic thermistor substrate according to claim 4, wherein in the step B, paraffin wax is continuously added into the stirring cylinder from the beginning of the stirring, and the adding time of the paraffin wax is 1/3-1/2 of the stirring time.
6. The process for processing the chip-type ceramic thermistor substrate according to claim 1, wherein the sintering operation in step D is divided into a multi-stage sintering process: the sintering temperature of the first sintering time is 350-390 ℃ in 10-20 minutes, the sintering temperature of the second sintering time is 400-450 ℃ in 10-20 minutes, the sintering temperature of the third sintering time is 450-550 ℃ in 10-20 minutes, the sintering temperature of the fourth sintering time is 750-760 ℃ in 10-20 minutes, the sintering temperature of the fifth sintering time is 950-960 ℃ in 10-20 minutes, the sintering temperature of the sixth sintering time is 1100-1150 ℃ in 10-20 minutes, the sintering temperature of the seventh sintering time is 1195-1120 ℃ in 10-20 minutes, the sintering temperature of the eighth sintering time is 1240-1290 ℃ in 10-20 minutes, the sintering temperature of the ninth sintering time is 1070-1050 ℃ in 10-20 minutes, and the sintering temperature of the tenth sintering time is 910-900 ℃ in 10-20 minutes.
7. The process for processing the chip-type ceramic thermistor substrate according to claim 1, wherein the polishing step in step E includes side polishing and edge polishing, and the edge polishing is performed after the side polishing is completed.
8. The process for processing a chip-type ceramic thermistor substrate according to claim 7, wherein the polishing of the side portion in step E comprises placing a plurality of resistor substrates into a mold, manually polishing the resistor substrates with sand paper, and polishing one side of each resistor substrate by turning the resistor substrate over and polishing the other side of each resistor substrate after polishing of the other side of each resistor substrate.
9. The process for manufacturing a chip-type ceramic thermistor substrate according to claim 8, wherein the edge polishing in step E is to place the resistor substrate with polished side portions in a vibration hopper and spray water mist into the vibration hopper.
10. The process for manufacturing a surface-mounted ceramic thermistor substrate according to claim 9, wherein the vibration hopper has a feeding channel for the resistor substrate to move smoothly along the vibration hopper, the width of the feeding channel matches the thickness of the resistor substrate, the resistor substrate is vertical, and the lower edge of the resistor substrate is embedded in the feeding channel.
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