CN113764598A - Thin film packaging structure, OLED display panel and display - Google Patents

Thin film packaging structure, OLED display panel and display Download PDF

Info

Publication number
CN113764598A
CN113764598A CN202010495903.7A CN202010495903A CN113764598A CN 113764598 A CN113764598 A CN 113764598A CN 202010495903 A CN202010495903 A CN 202010495903A CN 113764598 A CN113764598 A CN 113764598A
Authority
CN
China
Prior art keywords
layer
passivation layer
display panel
thin film
oled display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010495903.7A
Other languages
Chinese (zh)
Inventor
蔡奇哲
钟姣姣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xianyang Caihong Optoelectronics Technology Co Ltd
Original Assignee
Xianyang Caihong Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xianyang Caihong Optoelectronics Technology Co Ltd filed Critical Xianyang Caihong Optoelectronics Technology Co Ltd
Priority to CN202010495903.7A priority Critical patent/CN113764598A/en
Publication of CN113764598A publication Critical patent/CN113764598A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays

Abstract

The invention discloses a film packaging structure, an OLED display panel and a display, wherein the film packaging structure comprises: a first passivation layer (101); a coupling layer (102), the coupling layer (102) disposed over the first passivation layer (101); a second passivation layer (103), the second passivation layer (103) disposed over the coupling layer (102). The film packaging structure comprises the first passivation layer, the coupling layer and the second passivation layer which are sequentially stacked, so that the water and oxygen resisting capability can be effectively improved, the service life of the OLED display panel is prolonged, the overall thickness of the OLED display panel can be reduced, and the strength of the OLED display panel can be improved.

Description

Thin film packaging structure, OLED display panel and display
Technical Field
The invention belongs to the technical field of display, and particularly relates to a film packaging structure, a display panel and a display.
Background
With the development of information technology, the demand for display devices has rapidly increased. In order to meet such a demand, Display devices typified by Liquid Crystal Displays (LCDs), Plasma Displays (PDPs), and Organic Light Emitting Displays (OLEDs) have been rapidly developed.
The organic light emitting display device has many advantages, and has a good development prospect in the display field, has the characteristics of self-luminescence, high brightness, wide viewing angle, high contrast, flexibility, low energy consumption, wide color gamut, lightness and thinness and the like, has great advantages in the fields of high contrast display, energy saving, flexible display and the like, is used as a new generation display mode, has started to gradually replace the traditional liquid crystal display device, and is widely applied in the fields of mobile phone screens, computer displays, full-color televisions and the like. However, the organic light emitting display device is very sensitive to moisture and oxygen, and moisture and oxygen permeating into the organic light emitting display device are major factors affecting the life of the organic light emitting display device, and thus, the encapsulation technology is very important for the organic light emitting display device. In the packaging technology, the packaging material is required to have very low Water Vapor Transmission Rate (WVTR) and Oxygen Transmission Rate (OTR) and to ensure that the OLED device is as thin as possible.
However, the current packaging technology still has the problems of poor water vapor and oxygen barrier effect, thicker overall thickness and lower strength.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides a film package structure, a display panel and a display. The technical problem to be solved by the invention is realized by the following technical scheme:
a thin film encapsulation structure, comprising:
a first passivation layer;
a coupling layer disposed over the first passivation layer;
a second passivation layer disposed over the coupling layer.
In one embodiment of the present invention, the coupling layer includes a silane coupling agent.
In one embodiment of the invention, the coupling layer has a thickness in the range of 10-30 nm.
In one embodiment of the present invention, the thickness of the first passivation layer and the second passivation layer ranges from 100 nm to 300 nm.
In one embodiment of the invention, the material of the first passivation layer and the second passivation layer comprises SiNx
An embodiment of the present invention further provides an OLED display panel, including the thin film encapsulation structure according to any one of the above embodiments.
In one embodiment of the present invention, the OLED display device further includes an OLED light emitting device layer disposed under the first passivation layer, and a TFT array substrate disposed under the OLED light emitting device layer.
In one embodiment of the present invention, the display device further comprises a pixel structure layer, wherein the pixel structure layer is located above the second passivation layer.
In one embodiment of the present invention, the display device further comprises a CF cover plate, wherein the CF cover plate is located above the pixel structure layer.
An embodiment of the present invention further provides a display device, including the OLED display panel according to any one of the above embodiments.
The invention has the beneficial effects that:
the film packaging structure comprises the first passivation layer, the coupling layer and the second passivation layer which are sequentially stacked, so that the capability of blocking water vapor and oxygen can be effectively improved, the service life of the OLED display panel is prolonged, the overall thickness of the OLED display panel can be reduced, and the strength of the OLED display panel can be improved.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic structural diagram of a moisture absorbent packaging structure provided in the prior art;
fig. 2 is a schematic structural diagram of a thin film package structure provided in the prior art;
fig. 3 is a schematic structural diagram of a thin film encapsulation structure according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a conventional package structure provided in the prior art;
FIG. 5 is a schematic diagram of the formula of a silane coupling agent according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention.
Description of reference numerals:
thin film package structure-10; OLED light emitting device layer-20; a TFT array substrate-30; a pixel structure layer-40; CF cover plate-50; a first passivation layer-101; a coupling layer-102; a second passivation layer-103.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
At present, the Encapsulation technology of the OLED display panel is becoming mature, and the Encapsulation technology of the OLED display panel may include, for example, moisture absorbent Encapsulation (TFE), Thin Film Encapsulation (TFE), and the like. Referring to fig. 1, the moisture absorbent package removes moisture by using a moisture absorbent, but the moisture barrier capability of this method for moisture or contaminants is limited, and a CF (CF) cover plate is thick and hollow, so that it is difficult to manufacture a thinner and lighter OLED and its strength is insufficient. The thin film packaging technology has outstanding advantages in reducing the weight and thickness of devices, reducing packaging accessories, reducing packaging cost, reducing the width of packaging edges, reducing display dead angles, being flexible in curling and the like, and therefore, the thin film packaging technology is gaining more and more attention and application. Referring to fig. 2, fig. 2 is a schematic structural diagram of a thin film package structure provided in the prior art, and a typical thin film package structure generally consists of an inorganic barrier layer and an organic barrier layer which are overlapped and repeated. The inorganic barrier layer is generally a barrier layer for water vapor and oxygen, and mainly functions to block water vapor and oxygen, the organic barrier layer is a planarization layer and mainly functions to cover defects (including particles, pin holes and the like) on the surface of the inorganic barrier layer, so that a flat surface is provided for subsequent film formation, the stress on the surface of the inorganic barrier layer can be reduced, and defect expansion is prevented. When the organic barrier layer and the inorganic barrier layer which are overlapped in sequence are prepared, processes such as alternate deposition, sputtering and the like are needed, and the manufacturing process is troublesome.
For the above reasons, please refer to fig. 3, and fig. 3 is a schematic structural diagram of a thin film encapsulation structure according to an embodiment of the present invention, in which the thin film encapsulation structure 10 includes a first passivation layer 101, a coupling layer 102, and a second passivation layer 103, where the coupling layer 102 is disposed above the first passivation layer 101, the second passivation layer 103 is disposed above the coupling layer 102, and both the first passivation layer 101 and the second passivation layer 103 are made of inorganic materials.
Specifically, the first passivation layer 101 and the second passivation layer 103 of this embodiment serve as inorganic barrier layers, which can better block moisture and oxygen, and the coupling layer 102 has a bifunctional group, wherein the-Y long alkyl group in the coupling layer 102 has a hydrophobic effect, and the OR functional group in the coupling layer 102 is hydrolyzable to form a hydroxyl group, hydrogen is adsorbed in combination with the surface of the first passivation layer 101, and similarly, the contact surface of the second passivation layer 103 and the coupling layer 102 can also be adsorbed in combination, and then by drying the first passivation layer 101, the coupling layer 102 and the second passivation layer 103, a dehydration condensation reaction occurs to form a strong chemical bond, and thus it is known that the coupling layer 102 may form a "molecular bridge" between the interfaces of the first passivation layer 101 and the second passivation layer 103 to connect the first passivation layer 101 and the second passivation layer 103 together, thereby enhancing the adhesive strength of the first passivation layer 101 and the second passivation layer 103. Referring to fig. 4, fig. 4 is a schematic structural diagram of a conventional package structure provided in the prior art, in which an organic resin layer is disposed between two silicon oxynitride layers in the package structure in fig. 4, and an optical adhesive is further disposed above the upper silicon oxynitride layer, but the thin film package structure 10 of this embodiment only requires a coupling layer 102 disposed between a first passivation layer 101 and a second passivation layer 103, and the thin film package structure 10 is used to replace the package structure in fig. 4, so as to avoid the need of bonding the silicon oxynitride layer and the pixel structure layer by the optical adhesive, but to connect the second passivation layer 103 with the CF cover plate through the pixel structure layer, so as to increase the aperture ratio, and in this embodiment, the coupling layer 102 is disposed between the first passivation layer 101 and the second passivation layer 103 as the thin film package structure 10 to replace the conventional inorganic-organic-inorganic package structure, can effectively replace the relatively poor inorganic barrier layer of separation steam and oxygen performance and organic barrier layer, can improve the ability of separation steam and oxygen like this, increase OLED display panel's life, and because coupling layer 102 of this embodiment can accomplish thinly, as long as can effectively be connected first passivation layer 101 and second passivation layer 103, can make OLED display panel's whole thickness reduce like this, and can make OLED display panel's intensity increase simultaneously. In addition, the thin film package structure 10 of the present embodiment only needs to sequentially dispose the first passivation layer 101, the coupling layer 102, and the second passivation layer 103, so that the manufacturing process is simple and the manufacturing process is convenient.
Example two
In order to better describe the thin film encapsulation structure 10 of the first embodiment, the present embodiment specifically describes a specific structure of the thin film encapsulation structure 10 on the basis of the above embodiments. Referring to fig. 5, fig. 5 is a schematic diagram of a silane coupling agent according to an embodiment of the present invention, in which the coupling layer 102 is selected to be a silane coupling agent (Y-R-si (or))3) the-Y long alkyl group in the silane coupling agent has a hydrophobic effect, the-OR group can be decomposed into-OH groups when meeting water, the-OH groups and the inorganic interface of the first passivation layer 101 and the inorganic interface of the-OH groups and the second passivation layer 103 are adsorbed in hydrogen bonding property, and then dehydration condensation reaction can be carried out by drying the first passivation layer 101, the coupling layer 102 and the second passivation layer 103 to form firm chemical bonds, so that the compactness of the film packaging structure 10 is improved through the bonding effect of the chemical bonds, and the water vapor and oxygen blocking capacity and the interface adhesive force between the first passivation layer 101 and the coupling layer 102, and between the coupling layer 102 and the second passivation layer 103 are effectively improved.
Referring to fig. 3, a layer of silane coupling agent may be coated on the first passivation layer 101, and then the second passivation layer 103 is prepared on the silane coupling agent, where the first passivation layer 101 and the silane coupling agent, and the second passivation layer 103 and the silane coupling agent all undergo chemical reactions, so that a "molecular bridge" is built between interfaces of the first passivation layer 101 and the second passivation layer 103 through the silane coupling agent to tightly connect the first passivation layer 101 and the second passivation layer 103 together, thereby enhancing the adhesion between the first passivation layer 101 and the second passivation layer 103, and enhancing the strength thereof, and since the thickness of the silane coupling agent can be set to be thinner, the overall thickness of the OLED display panel prepared by using the thin film encapsulation structure 10 can be reduced, and the OLED display panel can be made thinner.
Further, the thickness range of the coupling layer 102 is 10-30nm, because the thickness of the coupling layer 102 is greater than 30nm, on one hand, the effect of blocking water vapor and oxygen is not improved, and meanwhile, the production cost and the thickness of the whole package are increased; on the other hand, too thick coupling layer 102 is also susceptible to cracking, resulting in reduced strength. When the thickness of the coupling layer 102 is less than 10nm, the effect of blocking water vapor and oxygen is not obvious, so that the thickness range of the coupling layer 102 is set to 10-30nm in the embodiment, the effect of blocking water vapor and oxygen can be ensured, the strength and the whole encapsulation thickness can be ensured, and the light and thin OLED display panel is realized.
In addition, the first passivation layer 101 and the second passivation layer 103 of the present embodiment may be made of the same material, and SiN may be used for both of themxThus, the structure of the thin film encapsulation structure 10 includes SiN layers sequentially stackedxSilane coupling agent SiNxThe structure of the thin film package structure 10 is used to replace the package structure shown in fig. 4, thereby avoiding the need of bonding the silicon oxynitride layer and the pixel structure layer by using optical cement, and enabling SiN to be used insteadxThe pixel structure layer is directly connected with the CF cover plate, so that the aperture opening ratio is increased, and SiNxCan be better absorbed by hydrogen bonding with-OH groups obtained by decomposing in water in the silane coupling agent, so that the formed chemical bond is firmer, and SiN can be further increased through the chemical bonding effectxAnd the compactness between the silane coupling agent, thereby effectively improving the capability of blocking water vapor and oxygen. The present embodiment utilizes SiNxSilane coupling agent SiNxThe organic light-emitting diode (OLED) display panel can replace a traditional inorganic-organic-inorganic packaging structure, and can effectively replace an inorganic blocking layer and an organic blocking layer which have poor water vapor and oxygen blocking performance, so that the water vapor and oxygen blocking capacity can be improved, and meanwhile, the service life of the OLED display panel can be prolonged.
Further, the thickness range of the first passivation layer 101 and the second passivation layer 103 is 100-300nm, and the first passivation layer 101 and the second passivation layer 103 in this thickness range can enable the package to have a good effect of blocking water vapor and oxygen.
EXAMPLE III
Referring to fig. 6, fig. 6 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention, and the present invention provides an OLED display panel based on the above embodiment, where the OLED display panel includes a Thin Film encapsulation structure 10, an OLED light emitting device layer 20, a TFT (Thin Film Transistor) array substrate 30, a pixel structure layer 40, and a CF cover plate 50, where the OLED light emitting device layer 20 is disposed above the TFT array substrate 30, the Thin Film encapsulation structure 10 is disposed above the OLED light emitting device layer 20, the pixel structure layer 40 is disposed above the Thin Film encapsulation structure 10, and the CF cover plate 50 is disposed above the pixel structure layer 40.
Further, the thin film encapsulation structure 10 includes a first passivation layer 101, a coupling layer 102, and a second passivation layer 103, wherein the coupling layer 102 is disposed above the first passivation layer 101, and the second passivation layer 103 is disposed above the coupling layer 102.
The first passivation layer 101 and the second passivation layer 103 of the present embodiment can better block moisture and oxygen, and the coupling layer 102 can specifically be a structure having a bifunctional group, wherein, because the contact surface of the first passivation layer 101 and the coupling layer 102 can perform binding adsorption, for example, the group of the coupling layer 102 can adsorb to the contact surface of the first passivation layer 101 through the binding of hydrogen, and likewise, the contact surface of the second passivation layer 103 and the coupling layer 102 can also perform binding adsorption, and then by drying the first passivation layer 101, the coupling layer 102, and the second passivation layer 103, a dehydration condensation reaction can occur to form a strong chemical bond, thereby enhancing the bonding strength of the first passivation layer 101 and the second passivation layer 103. The thin film encapsulation structure 10 of this embodiment only needs to set a coupling layer 102 between the first passivation layer 101 and the second passivation layer 103, and the thin film encapsulation structure 10 replaces the encapsulation structure in fig. 4, thereby avoiding the need of bonding the silicon oxynitride and the pixel structure layer by using the optical adhesive, but enabling the second passivation layer 103 to be directly connected with the CF cover plate through the pixel structure layer, so that the aperture ratio can be increased, and the thin film encapsulation structure 10 of this embodiment utilizes the coupling layer 102 set between the first passivation layer 101 and the second passivation layer 103 as the thin film encapsulation structure 10, instead of the conventional inorganic-organic-inorganic encapsulation structure, so that the organic barrier layer and the inorganic barrier layer with poor water vapor and oxygen blocking performance can be effectively replaced, so that the water vapor and oxygen blocking capability can be improved, the service life of the OLED display panel can be increased, and because the coupling layer 102 can be thinner, as long as the first passivation layer 101 and the second passivation layer 103 can be effectively connected, the overall thickness of the OLED display panel can be reduced, and at the same time, the strength of the OLED display panel can be increased. In addition, the thin film package structure 10 of the present embodiment only needs to sequentially dispose the first passivation layer 101, the coupling layer 102, and the second passivation layer 103, so that the manufacturing process is simple and the manufacturing process is convenient.
Preferably, the material of the first passivation layer 101 and the second passivation layer 103 may be SiNxThe coupling layer 102 may be a silane coupling agent because the-OR group in the silane coupling agent is decomposed into-OH groups when exposed to water, and the-OH groups are in contact with SiNxThe inorganic interface of (A) is subjected to hydrogen bonding adsorption, and then subjected to drying treatment, a dehydration condensation reaction occurs to form a firm chemical bond, and SiN can be increased by the chemical bonding effectxAnd the silane coupling agent, so that the film packaging structure 10 of the embodiment can achieve the effect of effectively improving the water and oxygen resistance. The present embodiment utilizes SiNxSilane coupling agent SiNxThe organic-inorganic packaging structure can effectively replace an organic barrier layer and an inorganic barrier layer with poor water vapor and oxygen barrier performance, so that the water vapor and oxygen barrier capability can be improved, and the service life of the OLED display panel can be prolonged. In addition, the thin film encapsulation structure 10 of the present embodiment only requires sequentially preparing SiN on the OLED light emitting device layer 20xSilane coupling agent and SiNxTherefore, the preparation process is simple, and the preparation cost can be saved.
In the present embodiment, the TFT Array substrate 30 is also called Array TFT substrate, the TFT Array substrate 30 is a main component of an OLED display device, and directly relates to the development direction of a high performance flat panel display device, the TFT Array substrate 30 is formed by stacking different functional layers to form electrical components with different functions, so as to implement the design function.
In this embodiment, the OLED light emitting device layer 20 may include, for example, an anode, an organic light emitting layer, and a cathode sequentially stacked on the TFT array substrate 30, the OLED display panel of this embodiment is a top light emitting mode, light is emitted from above the OLED display panel, in the field of large-sized panels, the mainstream light emitting mode of the OLED display panel is a bottom light emitting mode, in the structure of the OLED display panel, the light transmittance may be reduced due to the influence of the circuit of the TFT array substrate, and further, a larger and more light emitting amount is required in the OLED display panel, which has a certain influence on the life of the OLED display panel. In addition, the OLED light-emitting device layer 20 of the present embodiment may further include, for example, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and the like as needed.
In this embodiment, the material is SiNxThe pixel structure layer 40 is directly disposed above the OLED display panel, the pixel structure layer 40 includes red, green, blue sub-pixels and a bank (pixel defining structure), and the CF cover plate 50 is directly disposed on the pixel structure layer 40, the CF cover plate 50 is a color filter, which can convert the white light emitted from the OLED light emitting device layer 20 into r (red), g (green), and b (blue) lights.
Therefore, the structure of the thin film encapsulation structure 10 of the present embodiment includes SiN layers stacked in sequencexSilane coupling agent SiNxBy replacing the conventional package structure with the thin film package structure 10, the problem of small aperture ratio caused by bonding the silicon oxynitride layer and the pixel structure layer with optical cement can be avoided, and SiN can be bonded with the present embodimentxThrough the pixel structure layerDirectly connected to the CF cap plate, so that the aperture ratio can be increased, and SiNxCan be better absorbed by hydrogen bonding with-OH groups obtained by decomposing in water in the silane coupling agent, so that the formed chemical bond is firmer, and SiN can be further increased through the chemical bonding effectxAnd the compactness between the silane coupling agent, thereby effectively improving the capability of blocking water vapor and oxygen. The present embodiment also utilizes SiNxSilane coupling agent SiNxThe packaging structure replaces the traditional inorganic-organic-inorganic packaging structure, and the service life of the OLED display panel is prolonged.
Example four
The embodiment of the invention also provides a Display, which is an OLED Display, the OLED Display technology is a flat panel Display technology with great development prospect, and the Display has very excellent Display performance, especially characteristics of self-luminescence, simple structure, ultra-light and Thin property, fast response speed, wide viewing angle, low power consumption, flexible Display realization and the like, and in addition, the production equipment investment is far less than that of a Thin Film Transistor-Liquid Crystal Display (TFT-LCD), so that the Display is favored by various Display manufacturers and becomes the dominant force of the third generation Display device in the Display technology field.
Specifically, the OLED display may be, for example: any product or component with a display function, such as an LTPO display device, a Micro LED display device, electronic paper, an OLED panel, an AMOLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and the like.
Referring to fig. 6 again, the OLED display panel of this embodiment may specifically include a thin film encapsulation structure 10, an OLED light emitting device layer 20, a TFT array substrate 30, a pixel structure layer 40, and a CF cover plate 50, where the OLED light emitting device layer 20 is disposed above the TFT array substrate 30, the thin film encapsulation structure 10 is disposed above the OLED light emitting device layer 20, the pixel structure layer 40 is disposed above the thin film encapsulation structure 10, and the CF cover plate 50 is disposed above the pixel structure layer 40.
Further, the thin film encapsulation structure 10 includes a first passivation layer 101, a coupling layer 102, and a second passivation layer 103, wherein the coupling layer 102 is disposed above the first passivation layer 101, and the second passivation layer 103 is disposed above the coupling layer 102.
Further, the coupling layer 102 includes a silane coupling agent.
Further, the coupling layer 102 has a thickness in the range of 10-30 nm.
Further, the material of the first passivation layer 101 and the second passivation layer 103 comprises SiNx
Further, the thickness of the first passivation layer 101 and the second passivation layer 103 ranges from 100 nm to 300 nm.
In the present embodiment, the material of the first passivation layer 101 and the second passivation layer 103 may be SiNxThe coupling layer 102 may be a silane coupling agent because the-OR group in the silane coupling agent is decomposed into-OH groups when exposed to water, and the-OH groups are in contact with SiNxThe inorganic interface of (A) is subjected to hydrogen bonding adsorption, and then subjected to drying treatment, a dehydration condensation reaction occurs to form a firm chemical bond, and SiN can be increased by the chemical bonding effectxAnd the silane coupling agent, so that the thin film packaging structure 10 of the embodiment can achieve the effect of effectively improving the capability of blocking water vapor and oxygen. The present embodiment utilizes SiNxSilane coupling agent SiNxThe organic-inorganic packaging structure can effectively replace an organic barrier layer and an inorganic barrier layer with poor water vapor and oxygen barrier performance, so that the water vapor and oxygen barrier capability can be improved, and the service life of the OLED display panel can be prolonged. In addition, the thin film encapsulation structure 10 of the present embodiment only requires sequentially preparing SiN on the OLED light emitting device layer 20xSilane coupling agent and SiNxTherefore, the preparation process is simple, and the preparation cost can be saved.
In the present embodiment, the TFT Array substrate 30 is also called Array TFT substrate, the TFT Array substrate 30 is a main component of an OLED display device, and directly relates to the development direction of a high performance flat panel display device, the TFT Array substrate 30 is formed by stacking different functional layers to form electrical components with different functions, so as to implement the design function.
In this embodiment, the OLED light emitting device layer 20 may include, for example, an anode, an organic light emitting layer, and a cathode sequentially stacked on the TFT array substrate 30, and is a top light emitting manner, light is emitted from above the OLED display panel, in the field of large-sized panels, the mainstream light emitting manner of the OLED display panel is a bottom light emitting manner, in the structure of the OLED display panel, the light transmittance may be reduced due to the influence of the circuit of the TFT array substrate, and further, a larger and more light emitting amount is required in the OLED display panel, which has a certain influence on the life of the OLED display panel. In addition, the OLED light-emitting device layer 20 of the present embodiment may further include, for example, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and the like as needed.
In this embodiment, the material is SiNxThe pixel structure layer 40 is directly disposed above the OLED display panel, the pixel structure layer 40 includes red, green, blue sub-pixels and a bank (pixel defining structure), and the CF cover plate 50 is directly disposed on the pixel structure layer 40, the CF cover plate 50 is a color filter, which can convert the white light emitted from the OLED light emitting device layer 20 into r (red), g (green), and b (blue) lights.
The implementation principle and technical effect of the OLED display panel provided in the embodiment of the present invention are similar to those of the display panel provided in the above embodiment, and are not described herein again.
It should be noted that other structures of the display of this embodiment belong to the common general knowledge in the art, and the preparation and the location thereof are the same as the conventional manner in the art, so the description of this embodiment is not repeated for other structures.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.

Claims (10)

1. A thin film encapsulation structure (10), comprising:
a first passivation layer (101);
a coupling layer (102), the coupling layer (102) disposed over the first passivation layer (101);
a second passivation layer (103), the second passivation layer (103) disposed over the coupling layer (102).
2. The thin film encapsulation structure (10) of claim 1, wherein the coupling layer (102) comprises a silane coupling agent.
3. The thin film encapsulation structure (10) of claim 2, wherein the coupling layer (102) has a thickness in a range of 10-30 nm.
4. The thin film encapsulation structure (10) of any one of claims 1 to 3, wherein the thickness of the first passivation layer (101) and the second passivation layer (103) is in the range of 100-300 nm.
5. The thin film encapsulation structure (10) of claim 4, characterized in that the material of the first passivation layer (101) and the second passivation layer (103) comprises SiNx
6. An OLED display panel, characterized in that it comprises a thin film encapsulation structure (10) according to any one of claims 1 to 5.
7. The OLED display panel of claim 6, further comprising an OLED light emitting device layer (20) and a TFT array substrate (30), the OLED light emitting device layer (20) disposed below the first passivation layer (101), the TFT array substrate (30) disposed below the OLED light emitting device layer (20).
8. The OLED display panel of claim 6, further comprising a pixel structure layer (40), the pixel structure layer (40) being located above the second passivation layer (103).
9. The OLED display panel of claim 8, further comprising a CF cover plate (50) over the pixel structure layer (40).
10. A display, characterized in that it comprises an OLED display panel according to any one of claims 6 to 9.
CN202010495903.7A 2020-06-03 2020-06-03 Thin film packaging structure, OLED display panel and display Pending CN113764598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010495903.7A CN113764598A (en) 2020-06-03 2020-06-03 Thin film packaging structure, OLED display panel and display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010495903.7A CN113764598A (en) 2020-06-03 2020-06-03 Thin film packaging structure, OLED display panel and display

Publications (1)

Publication Number Publication Date
CN113764598A true CN113764598A (en) 2021-12-07

Family

ID=78783365

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010495903.7A Pending CN113764598A (en) 2020-06-03 2020-06-03 Thin film packaging structure, OLED display panel and display

Country Status (1)

Country Link
CN (1) CN113764598A (en)

Citations (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001125079A (en) * 1999-10-29 2001-05-11 Sumitomo Bakelite Co Ltd Substrate for transparent electrode and liquid crystal display device
CN1303228A (en) * 1999-12-22 2001-07-11 通用电气公司 Luminescence display apparatus and its manufacturing method
JP2001338754A (en) * 2000-05-30 2001-12-07 Casio Comput Co Ltd Electroluminescent element
US20090305064A1 (en) * 2008-05-29 2009-12-10 Jiro Tsukahara Barrier laminate, gas barrier film and device using the same
CN102007616A (en) * 2008-02-15 2011-04-06 皇家飞利浦电子股份有限公司 Encapsulated electronic device and method of manufacturing
WO2012101860A1 (en) * 2011-01-25 2012-08-02 大日本印刷株式会社 Gas barrier film, device and process for producing gas barrier film
US20140134362A1 (en) * 2011-08-24 2014-05-15 Fujifilm Corporation Barrier laminate and gas barrier film
CN103855314A (en) * 2012-11-29 2014-06-11 三星显示有限公司 Organic electroluminescence device
WO2015029532A1 (en) * 2013-08-29 2015-03-05 富士フイルム株式会社 Functional film and method for manufacturing functional film
CN204271085U (en) * 2014-12-05 2015-04-15 昆山工研院新型平板显示技术中心有限公司 A kind of organic light-emitting display device
CN104733647A (en) * 2015-03-10 2015-06-24 京东方科技集团股份有限公司 Thin film packaging method, thin film packaging structure and display device
US20150325810A1 (en) * 2013-03-08 2015-11-12 Fujifilm Corporation Organic el laminate
CN105118933A (en) * 2015-09-02 2015-12-02 深圳市华星光电技术有限公司 Thin film encapsulation method and organic light emitting device
CN106935722A (en) * 2017-04-28 2017-07-07 京东方科技集团股份有限公司 Organic electroluminescence device and preparation method thereof and display device
CN107958960A (en) * 2017-11-16 2018-04-24 武汉华星光电半导体显示技术有限公司 Packaging film and display device
JP2018147699A (en) * 2017-03-06 2018-09-20 東洋インキScホールディングス株式会社 Photocurable composition for barrier property laminate designed for organic el device, and method for manufacturing barrier property laminate designed for organic el device
CN108735913A (en) * 2017-04-25 2018-11-02 群创光电股份有限公司 Show equipment
CN108832023A (en) * 2018-06-29 2018-11-16 京东方科技集团股份有限公司 Encapsulating structure, electronic device and packaging method
CN108987610A (en) * 2013-07-24 2018-12-11 3M创新有限公司 Sticky barrier film construction
CN109309176A (en) * 2018-08-30 2019-02-05 武汉华星光电半导体显示技术有限公司 The preparation method and its display base plate of display base plate
CN109524563A (en) * 2018-11-16 2019-03-26 京东方科技集团股份有限公司 Substrate and preparation method thereof, display panel
CN110085767A (en) * 2013-12-18 2019-08-02 上海天马有机发光显示技术有限公司 A kind of organic light-emitting display device of hydrophobic organic film encapsulation
CN110518145A (en) * 2019-08-28 2019-11-29 云谷(固安)科技有限公司 Thin-film packing structure and preparation method thereof, display panel
CN111106262A (en) * 2019-12-06 2020-05-05 武汉华星光电半导体显示技术有限公司 Packaging structure and preparation method thereof

Patent Citations (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001125079A (en) * 1999-10-29 2001-05-11 Sumitomo Bakelite Co Ltd Substrate for transparent electrode and liquid crystal display device
CN1303228A (en) * 1999-12-22 2001-07-11 通用电气公司 Luminescence display apparatus and its manufacturing method
JP2001338754A (en) * 2000-05-30 2001-12-07 Casio Comput Co Ltd Electroluminescent element
CN102007616A (en) * 2008-02-15 2011-04-06 皇家飞利浦电子股份有限公司 Encapsulated electronic device and method of manufacturing
US20090305064A1 (en) * 2008-05-29 2009-12-10 Jiro Tsukahara Barrier laminate, gas barrier film and device using the same
WO2012101860A1 (en) * 2011-01-25 2012-08-02 大日本印刷株式会社 Gas barrier film, device and process for producing gas barrier film
US20140134362A1 (en) * 2011-08-24 2014-05-15 Fujifilm Corporation Barrier laminate and gas barrier film
CN103855314A (en) * 2012-11-29 2014-06-11 三星显示有限公司 Organic electroluminescence device
US20150325810A1 (en) * 2013-03-08 2015-11-12 Fujifilm Corporation Organic el laminate
CN108987610A (en) * 2013-07-24 2018-12-11 3M创新有限公司 Sticky barrier film construction
WO2015029532A1 (en) * 2013-08-29 2015-03-05 富士フイルム株式会社 Functional film and method for manufacturing functional film
CN110085767A (en) * 2013-12-18 2019-08-02 上海天马有机发光显示技术有限公司 A kind of organic light-emitting display device of hydrophobic organic film encapsulation
CN204271085U (en) * 2014-12-05 2015-04-15 昆山工研院新型平板显示技术中心有限公司 A kind of organic light-emitting display device
CN104733647A (en) * 2015-03-10 2015-06-24 京东方科技集团股份有限公司 Thin film packaging method, thin film packaging structure and display device
US20170047543A1 (en) * 2015-03-10 2017-02-16 Boe Technology Group Co., Ltd. Packaging method with films, film package structure and display device
CN105118933A (en) * 2015-09-02 2015-12-02 深圳市华星光电技术有限公司 Thin film encapsulation method and organic light emitting device
JP2018147699A (en) * 2017-03-06 2018-09-20 東洋インキScホールディングス株式会社 Photocurable composition for barrier property laminate designed for organic el device, and method for manufacturing barrier property laminate designed for organic el device
CN108735913A (en) * 2017-04-25 2018-11-02 群创光电股份有限公司 Show equipment
CN106935722A (en) * 2017-04-28 2017-07-07 京东方科技集团股份有限公司 Organic electroluminescence device and preparation method thereof and display device
CN107958960A (en) * 2017-11-16 2018-04-24 武汉华星光电半导体显示技术有限公司 Packaging film and display device
CN108832023A (en) * 2018-06-29 2018-11-16 京东方科技集团股份有限公司 Encapsulating structure, electronic device and packaging method
CN109309176A (en) * 2018-08-30 2019-02-05 武汉华星光电半导体显示技术有限公司 The preparation method and its display base plate of display base plate
CN109524563A (en) * 2018-11-16 2019-03-26 京东方科技集团股份有限公司 Substrate and preparation method thereof, display panel
CN110518145A (en) * 2019-08-28 2019-11-29 云谷(固安)科技有限公司 Thin-film packing structure and preparation method thereof, display panel
CN111106262A (en) * 2019-12-06 2020-05-05 武汉华星光电半导体显示技术有限公司 Packaging structure and preparation method thereof

Similar Documents

Publication Publication Date Title
CN108630732B (en) O L ED display panel and manufacturing method thereof
JP2024023470A (en) display device
US10580843B2 (en) Substrate and fabrication method thereof, and display device
CN103700685B (en) A kind of display panel, display device
TWI362128B (en) Light emitting device and method of manufacturing the same
US8253322B2 (en) Organic light emitting display device including light absorption pattern unit
US8004187B2 (en) Organic electro-luminescence display having an inverted trapeziform patterned separator structure
US8120241B2 (en) Display device having a white light source and a dichroic layer
US20070120108A1 (en) Light emitting device
US7982398B2 (en) Backlight unit and liquid crystal display device including the same
CN105247701A (en) Organic light-emitting device and method for manufacturing same
WO2019205425A1 (en) Woled display panel and manufacturing method therefor
CN109166978B (en) Display panel, manufacturing method thereof and display device
KR20160035733A (en) Organic light emitting display device and method of manufacturing the same
US11296143B2 (en) Display panel and display device
CN108711592A (en) A kind of display base plate and preparation method thereof, display device and preparation method thereof
US7633082B2 (en) Light emitting device
WO2023000387A1 (en) Display panel and display apparatus
CN111490180A (en) Display panel, display device, and method for manufacturing display panel
CN113764598A (en) Thin film packaging structure, OLED display panel and display
JP2006172837A (en) Sealing member, selfluminous panel and manufacturing method for selfluminous panel
US20240023405A1 (en) Oled display panel
WO2019174121A1 (en) Display panel, display panel fabricating method, and electronic device
KR102630202B1 (en) Organic light emitting display device
US20210202911A1 (en) Light emitting display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination