CN113764574A - Preparation method of heterogeneous thin film substrate and acoustic filter - Google Patents

Preparation method of heterogeneous thin film substrate and acoustic filter Download PDF

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Publication number
CN113764574A
CN113764574A CN202110829225.8A CN202110829225A CN113764574A CN 113764574 A CN113764574 A CN 113764574A CN 202110829225 A CN202110829225 A CN 202110829225A CN 113764574 A CN113764574 A CN 113764574A
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ion implantation
substrate
thin film
defect layer
support substrate
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欧欣
李忠旭
黄凯
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Shanghai Xinsi Polymer Semiconductor Co ltd
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Shanghai Xinsi Polymer Semiconductor Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The invention relates to the technical field of preparation of radio frequency devices, in particular to a preparation method of a heterogeneous thin film substrate and an acoustic filter. According to the preparation method of the heterogeneous thin film substrate, the ions with the same components are injected into the surface of the supporting substrate, the defect layer is formed in the supporting substrate, the thermal stress distribution in the heterogeneous substrate structure is optimized, the frequency deviation and the loss of the device are optimized, and the power consumption is reduced.

Description

Preparation method of heterogeneous thin film substrate and acoustic filter
Technical Field
The invention relates to the technical field of preparation of radio frequency devices, in particular to a preparation method of a heterogeneous thin film substrate and an acoustic filter.
Background
With the increasing pursuit of data transmission speed, performance, power consumption, etc. of telecommunication equipment, people need to provide a new chip integration scheme to realize chip technology with high performance, high integration and low power consumption. Depending on the properties of the materials, chips with different superior properties have been realized based on the superior properties of the materials themselves. For example, high-integration silicon chips, high-speed and high-frequency gallium arsenide chips, high-power gallium nitride chips, and piezoelectric chips are widely applied to filters of radio frequency systems. The rise of the piezoelectric film enables the size of related optical and acoustic devices to be greatly reduced, the working efficiency is improved, and a novel working mode is realized.
At present, integrating piezoelectric materials with silicon provides a material-level integrated wafer substrate, providing a material platform for the preparation of monolithically integrated modules; the filter prepared by the current heterogeneous substrate wafer can effectively improve the center frequency and the bandwidth of the related filter, reduce the power consumption and reduce the heat dissipation. Corresponding wafer materials can be provided by transferring the piezoelectric single crystals to the required substrate by using an ion beam stripping method, the thickness of the piezoelectric film is uniform, and the prepared device has good stability. However, in the filter actually working in the radio frequency band, the substrate layer can excite the movable carriers under the high-frequency signal, so that the effective resistivity of the substrate is reduced, the frequency offset and the loss of the device are increased, the power consumption is improved, and the application scene of the related filter is limited.
Disclosure of Invention
The invention aims to solve the technical problems that in a filter actually working in a radio frequency wave band, a substrate layer can excite movable carriers under a high-frequency signal, so that the effective resistivity of the substrate is changed, the frequency offset and the loss of a device are increased, the power consumption is improved, and the application scene of a related filter is limited.
To solve the above technical problems, the present application discloses in one aspect a method for preparing a heterogeneous thin film substrate, comprising:
providing a support substrate; the support substrate includes a first surface;
performing a first ion implantation from the first surface to form a support substrate having a first defect layer; the atomic number of the element corresponding to the ion implanted by the first ion is more than 3;
providing a piezoelectric film having a second defective layer;
bonding the support substrate with the first defect layer and the piezoelectric film with the second defect layer through the first surface to obtain a bonded substrate;
and carrying out annealing stripping treatment on the bonded substrate to obtain the heterogeneous thin film structure.
Optionally, the material of the support substrate includes at least one of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride, silicon carbide, and silicon on insulator.
Optionally, the first ion implantation temperature is 50-150 deg.C,
the energy of the first ion implantation is 1keV-2000 keV;
the first ion implantation dose is 1 × 1016cm-2-1.5×1017cm-2。
Optionally, the ions implanted by the first ion implantation are ions corresponding to elements, of which atomic masses are greater than a preset value, corresponding to the elements contained in the supporting substrate.
Optionally, the method for preparing the piezoelectric film with the second defect layer includes:
providing a piezoelectric film; the piezoelectric film comprises a second surface;
and performing second ion implantation from the second surface to form a second defect layer in the piezoelectric film, thereby obtaining the piezoelectric film with the second defect layer.
Optionally, the second ion implantation method includes hydrogen ion implantation, helium ion implantation, neon ion implantation or hydrogen-helium ion co-implantation;
the temperature of the ion implantation is 50-150 ℃;
the energy of the ion implantation is 1keV-2000 keV;
the ion implantation dose is 1 × 1016cm-2-1.5×1017cm-2。
Optionally, bonding the support substrate with the first defect layer and the piezoelectric film with the second defect layer through the first surface to obtain a bonded substrate, including:
bonding the second surface of the piezoelectric film with the second defect layer with the first surface of the support substrate to obtain a bonded substrate;
after the ion implantation is performed from the first surface to form a second defect layer in the piezoelectric film, and the piezoelectric film having the second defect layer is obtained, the method further includes:
performing surface treatment on the first surface and the second surface;
the surface treatment comprises a surface roughness treatment, and the method for performing the surface roughness treatment comprises at least one of chemical mechanical polishing, chemical etching and low-energy ion irradiation.
Optionally, the annealing stripping temperature range is 100-.
Optionally, after the annealing and peeling treatment is performed on the bonded substrate to obtain the heterogeneous thin film structure, the method further includes:
optimizing the heterogeneous thin film structure; the optimization treatment includes at least one of post-annealing treatment and surface treatment.
The present application also discloses in another aspect an acoustic filter comprising a support substrate, a piezoelectric film, and interdigital electrodes;
the piezoelectric film is arranged on the top of the supporting substrate; a first defect layer is present in the support substrate; the supporting substrate is connected with the piezoelectric film in a bonding mode;
the interdigital electrode is arranged on the piezoelectric film.
By adopting the technical scheme, the application discloses a preparation method of a heterogeneous thin film substrate, which has the following beneficial effects:
according to the preparation method of the heterogeneous thin film substrate, ion implantation needs to be carried out in the supporting substrate, ions with the same components are implanted into the surface of the supporting substrate, for example, silicon is implanted into the silicon substrate, oxygen is implanted into the silicon oxide substrate, and a defect layer is formed by ion implantation in the supporting substrate, so that the thermal stress distribution in the heterogeneous substrate structure is optimized, the defect layer in the supporting substrate layer can inhibit the movement of movable carriers excited by high-frequency signals, the effective resistivity of the substrate is ensured, the frequency offset and the loss of devices are optimized, the power consumption is reduced, and the application scene of related filters is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart illustrating the preparation of a heterogeneous thin film substrate according to an alternative embodiment of the present application;
FIG. 2 is a schematic structural view of an alternative support substrate of the present application;
FIG. 3 is a schematic structural diagram of an alternative support substrate having a first defect layer according to the present application;
FIG. 4 is a schematic structural view of an alternative piezoelectric film of the present application;
FIG. 5 is a schematic structural diagram of an alternative piezoelectric film having a second defective layer according to the present application;
FIG. 6 is a schematic structural diagram of an alternative bonded substrate of the present application;
FIG. 7 is a schematic structural view of an alternative heterogeneous thin film structure of the present application;
fig. 8 is a schematic diagram of an alternative acoustic filter according to the present application.
The following is a supplementary description of the drawings:
1-a support substrate; 11-a first defect layer; 2-a support substrate having a first defect layer; 3-a piezoelectric film; 31-a second defect layer; 4-a piezoelectric film having a second defective layer; 5-a bonding substrate; 6-heterogeneous thin film structure; 7-interdigital electrodes.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the present application. In the description of the present application, it is to be understood that the terms "upper", "lower", "top", "bottom", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. Moreover, the terms "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
For purposes of the following detailed description, it is to be understood that the invention may assume various alternative variations and step sequences, except where expressly specified to the contrary. Moreover, other than in any operating examples, or where otherwise indicated, all numbers expressing, for example, quantities of ingredients used in the specification and claims are to be understood as being modified in all instances by the term "about". Accordingly, unless indicated to the contrary, the numerical parameters set forth in the following specification and attached claims are approximations that may vary depending upon the desired properties to be obtained by the present invention. At the very least, and not as an attempt to limit the application of the doctrine of equivalents to the scope of the claims, each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques.
Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the invention are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements.
When a range of values is disclosed herein, the range is considered to be continuous and includes both the minimum and maximum values of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values of the range is included. Further, when multiple range-describing features or characteristics are provided, the ranges may be combined. In other words, unless otherwise indicated, all ranges disclosed herein are to be understood to encompass any and all subranges subsumed therein. For example, a stated range from "1 to 10" should be considered to include any and all subranges between the minimum value of 1 and the maximum value of 10. Exemplary subranges of the range 1 to 10 include, but are not limited to, 1 to 6.1, 3.5 to 7.8, 5.5 to 10, and the like.
Referring to fig. 1, fig. 1 is a flow chart illustrating a process for preparing a heterogeneous thin film substrate according to an alternative embodiment of the present application. The application discloses a preparation method of a heterogeneous thin film substrate, which comprises the following steps:
s101: providing a support substrate 1; the support substrate 1 comprises a first surface. Fig. 2 is a schematic structural diagram of an alternative support substrate of the present application, as shown in fig. 2.
In an alternative embodiment, the material of the support substrate 1 comprises at least one of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride, silicon carbide and silicon-on-insulator.
S102: a first ion implantation is performed from the first surface to form a support substrate 2 having a first defect layer. The first ion-implanted ions have an atomic number of the element corresponding to 3 or more. Fig. 3 is a schematic structural diagram of an alternative support substrate with a first defect layer according to the present application, as shown in fig. 3.
Optionally, the element corresponding to the ion implanted by the first ion implantation may be an element with an atomic number greater than 3, such as beryllium, boron, carbon, nitrogen, and oxygen.
In this embodiment, as can be seen from fig. 3, the top of the supporting substrate 1 is the first surface, and the first ion implantation direction is from top to bottom.
Optionally, the first defect layer 11 is close to the first surface or the top of the first defect layer 11 is the first surface, and the region is a region where carriers are easily generated, so that when the first defect layer 11 is disposed at the supporting substrate 1, the movement of the carriers can be further effectively inhibited, the effective resistivity of the substrate is ensured, and the acoustic device operating at the radio frequency can cause the substrate to generate induced charges, which causes loss (i.e., additional heating) and signal distortion caused by an additional substrate, and the first defect layer 11 located in the substrate can inhibit the occurrence of the induced charges, which is beneficial to optimizing the loss of the radio frequency device and reducing heating; and the formation of the first defect layer 11 can also make the stress gradient distribution of the following bonding body in a discontinuous state, and the appropriate defect layer can release the deformation of the substrate on the layer, so that the thermal stress caused by the temperature fluctuation of the prepared filter in actual use can be optimized.
In an alternative embodiment, the temperature of the first ion implantation is 50-150 ℃, and the energy of the first ion implantation is 1keV-2000 keV; the first ion implantation dose is 1 × 1016cm-2-1.5×1017cm-2。
In an alternative embodiment, the ions of the first ion implantation are ions corresponding to elements whose atomic mass corresponding to the elements contained in the support substrate 1 is greater than a preset value; optionally, the atomic masses of all the elements in the support substrate 1 may be sorted from large to small, the larger the atomic mass is, the earlier the sorting is, the number corresponding to the element with the largest atomic mass is 1, the number corresponding to the element with the smallest atomic mass is n, and n is a positive integer greater than 1; and n is the number of all elements of the support substrate 1; optionally, the ion corresponding to the number 1 may be determined as the ion for the first ion implantation, for example, when the material of the support substrate 1 is aluminum nitride, it is known through analysis that the ion includes nitrogen element and aluminum element, where the atomic mass corresponding to the nitrogen element is 14, the atomic mass corresponding to the aluminum element is 27, and when the preset value is that the atomic mass corresponding to the aluminum element is larger, and the atomic number corresponding to the aluminum element is 13, which is greater than 3; so that the ions implanted by the first ions are aluminum ions to form larger damage; the thermal stress distribution in the heterogeneous substrate structure can be further optimized, the defect layer in the supporting substrate 1 layer can inhibit the movement of movable carriers excited by high-frequency signals, the effective resistivity of the substrate is ensured, the frequency offset and the loss of a device are optimized, and the power consumption is reduced; optionally, the preset value may be 20, or may also be 7, 9, 12, and the like, and may be set as needed, which is not limited herein.
S103: a piezoelectric film 4 having a second defective layer is provided.
In an alternative embodiment, step S103 may be specifically stated as: providing a piezoelectric film 3; second ion implantation is performed on the second surface of the piezoelectric thin film 3, and a second defect layer 31 is formed in the piezoelectric thin film 3, thereby obtaining the piezoelectric thin film 4 having the second defect layer. As shown in fig. 4-5, fig. 4 is a schematic structural diagram of an alternative piezoelectric film of the present application. Fig. 5 is a schematic structural diagram of an alternative piezoelectric film having a second defective layer according to the present application.
Optionally, the material of the piezoelectric film 3 includes lithium niobate, lithium tantalate, indium phosphide, gallium arsenide, gallium nitride, indium arsenide, indium antimonide, or other piezoelectric materials.
In this embodiment, as can be seen from fig. 5, the top of the piezoelectric film 3 is the second surface, and the second ion implantation direction is from top to bottom.
In an alternative embodiment, the second ion implantation method includes using hydrogen ion implantation, helium ion implantation, neon ion implantation, or hydrogen-helium ion co-implantation; the temperature of the ion implantation is 50-150 ℃; the energy of the ion implantation is 1keV-2000 keV; the ion implantation dose is 1 × 1016cm-2-1.5×1017cm-2。
The depth of the first ion implantation and the second ion implantation can be adjusted by adjusting parameters such as temperature and implantation energy, and is not limited herein.
S104: the support substrate 2 having the first defective layer is bonded to the piezoelectric thin film 4 having the second defective layer through the first surface, resulting in a bonded substrate 5. Fig. 6 is a schematic structural diagram of an alternative bonded substrate of the present application, as shown in fig. 6.
In an alternative embodiment, step S104 may be specifically set forth as: bonding the second surface of the piezoelectric film 4 with the second defect layer with the first surface of the support substrate 1 to obtain the bonded substrate 5; after the ion implantation from the first surface is performed to form the second defect layer 31 in the piezoelectric thin film 3, the piezoelectric thin film 4 having the second defect layer is obtained, the method further includes: performing surface treatment on the first surface and the second surface; the surface treatment includes a surface roughness treatment performed by at least one of chemical mechanical polishing, chemical etching, and low energy ion irradiation to increase bonding strength.
S105: the bonded substrate 5 is subjected to an annealing peeling process to obtain a heterogeneous thin film structure 6. Fig. 7 is a schematic structural diagram of an alternative heterogeneous thin film structure according to the present application, as shown in fig. 7. The annealing stripping temperature range is 100-300 ℃; optionally, the stripping temperature may also be 100-250 deg.C, 200-300 deg.C, etc.
In an alternative embodiment, the time for annealing and stripping is 1-1000 h; in the annealing and peeling process, the temperature is gradually increased to the peeling temperature, so that the bonded structure is peeled and separated along the second defect layer 31 into the piezoelectric film 3 and the composite piezoelectric substrate, namely the heterogeneous film structure 6.
In an alternative embodiment, after the annealing and peeling treatment is performed on the bonded substrate 5 to obtain the heterogeneous thin film structure 6, the method further includes: carrying out optimization treatment on the heterogeneous thin film structure 6; the optimization treatment comprises at least one of post-annealing treatment and surface treatment to reduce the surface roughness and meet the requirements of devices, and the post-annealing treatment is carried out on the heterogeneous thin film structure 6, so that lattice defects caused by the injection of the second ions can be effectively eliminated, and the quality of the heterogeneous thin film structure 6 is improved.
Optionally, the temperature range of the post-annealing treatment is 300-; the time of the post-annealing treatment is 0.5-100 h.
It should be noted that the heat treatment temperature mentioned above in this application is not higher than 800 ℃, so as to ensure that the first defect layer 11 formed by the first ion implantation can effectively alleviate the loss, otherwise, when the heat treatment temperature is higher than 800 ℃, the first defect layer 11 formed by the first ion implantation on the support substrate layer can be failed, i.e. the polycrystalline layer is recrystallized into a single crystal.
Optionally, providing a first heterogeneous thin film structure, where the first heterogeneous thin film structure is marked as #1, and the structure of an experimental group corresponding to the first heterogeneous thin film structure is 600nm lithium tantalate/600 um silicon substrate; the structure of the contrast group is 600nm lithium tantalate/2 um defect layer/600 um silicon substrate; the second heterogeneous thin film structure is marked as #2, and the structure of the experimental group corresponding to the first heterogeneous thin film structure is a lithium tantalate with the thickness of 450 nm/a silicon substrate with the thickness of 600 um; the structure of the contrast group is lithium tantalate with the wavelength of 450 nm/a defect layer with the wavelength of 2 um/a silicon substrate with the wavelength of 600 um; the warpage value shown in table 1 can be obtained by heating the structure at 70 ℃, and therefore, compared with a structure which does not prepare a defect layer in a support substrate, the film structure with the defect layer prepared by the preparation method has the characteristics of lower warping degree and smaller thermal deformation under the same temperature treatment condition, so that the film structure has the advantages of reducing device heating and improving device stability when being applied to an acoustic filter. Alternatively, the support substrate 1 may be a composite structure of silicon oxide and a silicon substrate.
TABLE 1
Numbering Warpage of structures with defective layers Structural warpage of defect-free layer
#
1 8.1um 20.7um
#2 3.1um 15.1um
Fig. 8 is a schematic structural diagram of an alternative acoustic filter according to the present application, as shown in fig. 8. The present application also discloses in another aspect an acoustic filter comprising a support substrate 1, a piezoelectric film 3 and interdigital electrodes 7; the piezoelectric film 3 is arranged on the top of the supporting substrate 1; a first defect layer 11 is present within the support substrate 1; the support substrate 1 is bonded with the piezoelectric film 3; the interdigital electrode 7 is provided on the piezoelectric film 3. Because the first defect layer 11 exists in the supporting substrate 1, the thermal stress distribution in the heterogeneous substrate structure is optimized, the defect layer in the supporting substrate 1 can inhibit the movement of movable carriers excited by high-frequency signals, the effective resistivity of the substrate is ensured, the frequency offset and loss of devices are optimized, the power consumption is reduced, and the high-performance low-power-consumption filter suitable for radio frequency is obtained.
The above description is only exemplary of the present application and should not be taken as limiting, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A method for preparing a heterogeneous thin film substrate is characterized by comprising the following steps:
providing a support substrate (1); the support substrate (1) comprises a first surface;
performing a first ion implantation from said first surface, forming a support substrate (2) having a first defect layer; the atomic number of an element corresponding to the ion implanted by the first ion is greater than 3;
providing a piezoelectric film (4) having a second defect layer;
bonding the support substrate (2) with the first defect layer and the piezoelectric film (4) with the second defect layer through a first surface to obtain a bonded substrate (5);
and carrying out annealing stripping treatment on the bonding substrate (5) to obtain the heterogeneous thin film structure (6).
2. The production method according to claim 1, wherein the material of the support substrate (1) comprises at least one of silicon, silicon oxide, sapphire, diamond, aluminum nitride, gallium nitride, silicon carbide, and silicon on insulator.
3. The method of claim 1, wherein the first ion implantation temperature is 50 to 150 ℃,
the energy of the first ion implantation is 1keV-2000 keV;
the first ion implantation dose is 1 × 1016cm-2-1.5×1017cm-2。
4. The method according to claim 3, wherein the ions of the first ion implantation are ions corresponding to elements having an atomic mass greater than a predetermined value, the elements being contained in the support substrate (1).
5. The production method according to claim 1, wherein the method of producing the piezoelectric thin film (4) having the second defective layer includes:
providing a piezoelectric film (3); the piezoelectric film (3) comprises a second surface;
and carrying out second ion implantation from the second surface to form a second defect layer (31) in the piezoelectric film (3) so as to obtain the piezoelectric film (4) with the second defect layer.
6. The method of claim 5, wherein the second ion implantation comprises hydrogen ion implantation, helium ion implantation, neon ion implantation, or hydrogen-helium ion co-implantation;
the temperature of the ion implantation is 50-150 ℃;
the energy of the ion implantation is 1keV-2000 keV;
the dosage of the ion implantation is 1 x 1016cm-2-1.5×1017cm-2。
7. The method according to claim 5, wherein said bonding said support substrate (2) having said first defective layer to said piezoelectric thin film (4) having said second defective layer through a first surface, obtaining a bonded substrate (5), comprises:
bonding the second surface of the piezoelectric film (4) with the second defect layer with the first surface of the support substrate (1) to obtain the bonded substrate (5);
after the ion implantation from the first surface is performed to form a second defect layer (31) in the piezoelectric thin film (3) and obtain the piezoelectric thin film (4) with the second defect layer, the method further comprises:
performing surface treatment on the first surface and the second surface;
the surface treatment comprises a surface roughness treatment, and the method of the surface roughness treatment comprises at least one of chemical mechanical polishing, chemical corrosion and low-energy ion irradiation.
8. The method as claimed in claim 1, wherein the annealing and peeling temperature is in the range of 100-300 ℃.
9. The method according to claim 8, wherein after the annealing and peeling treatment is performed on the bonded substrate (5) to obtain the heterogeneous thin film structure (6), the method further comprises:
optimizing the heterogeneous thin film structure (6); the optimization treatment includes at least one of post-annealing treatment and surface treatment.
10. An acoustic filter, characterized by comprising a support substrate (1), a piezoelectric film (3) and interdigital electrodes (7);
the piezoelectric film (3) is arranged on the top of the supporting substrate (1); -a first defect layer (11) is present within said support substrate (1); the supporting substrate (1) is connected with the piezoelectric film (3) in a bonding mode;
the interdigital electrode (7) is arranged on the piezoelectric film (3).
CN202110829225.8A 2021-07-22 2021-07-22 Preparation method of heterogeneous thin film substrate and acoustic filter Pending CN113764574A (en)

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