CN113764569A - Ion implantation-based cold-junction tube switch and preparation method thereof - Google Patents
Ion implantation-based cold-junction tube switch and preparation method thereof Download PDFInfo
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 45
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000002513 implantation Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000010408 film Substances 0.000 claims description 53
- 150000002500 ions Chemical class 0.000 claims description 40
- 239000010409 thin film Substances 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000005315 distribution function Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 16
- 230000001105 regulatory effect Effects 0.000 abstract description 7
- 239000011572 manganese Substances 0.000 description 15
- 239000007943 implant Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 238000000342 Monte Carlo simulation Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004969 ion scattering spectroscopy Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/30—Devices switchable between superconducting and normal states
- H10N60/35—Cryotrons
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
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Abstract
The invention relates to an ion implantation-based cold electron tube switch and a preparation method thereof. According to the ion implantation-based cold electron tube switch, the superconducting film obtained by the ion implantation method is used as a gate line material of the cold electron tube switch, and the critical temperature and the critical magnetic field of the superconducting film can be continuously regulated and controlled, so that the superconducting film with corresponding implantation concentration can be selected according to the working parameters required by the cold electron tube switch, and the working parameters of the cold electron tube switch are flexible.
Description
Technical Field
The invention relates to the field of superconducting switches, in particular to a cryotron switch based on ion implantation and a preparation method thereof.
Background
The superconducting circuit has unique characteristics and excellent performance which are not possessed by the traditional semiconductor circuit, and is widely applied to the fields of quantum computation, low-power consumption classical computation, low-temperature detectors and the like. In these applications, superconducting circuits are becoming more and more complex. This has prompted the need for superconducting switches to reduce the number of leads required for the superconducting circuit, enable multiplexing, and enhance the programmability of the circuit. The Cryotron superconducting switch has high current capacity, only needs small excitation current, and is suitable for being used at the temperature of sub-Kelvin.
Cryotron was first proposed by Buck in 1956, as shown in fig. 1, and consists of a Gate wire 1(Gate wire) and a Control coil 2(Control coil) tightly wound around it. The device is switched by applying a certain current to the control coil 2 to generate a magnetic field to switch the gate line to the normal state. Because the critical magnetic field value of the control coil 2 is much larger than that of the gate line, the current on the control coil 2 can generate enough magnetic field and can still be in a superconducting state. Since the control line 2 is a simple superconducting line, the cold leg switch has a high current capacity in the closed state and a low leakage current in the open state, and these characteristics make the cold leg switch the basis for an ideal switch.
The principle of the cold tube switch determines that the working parameters are obviously limited by the superconducting characteristic of the gate line. If the critical temperature of the gate line determines the temperature range in which the cold-tube switch can work, the critical magnetic field of the gate line influences the magnitude of the control current required by the switch to switch, and therefore indirectly influences the power consumption of the switch. In the existing research of the cold electron tube device, a material with a low critical magnetic field, such as tin, is often selected as a gate line, however, the selection of the material is limited, and the working parameters of the cold electron tube device are limited.
Disclosure of Invention
The invention aims to provide an ion implantation-based cold electron tube switch and a preparation method thereof, wherein a superconducting thin film with continuously changing critical temperature and critical magnetic field is obtained by an ion implantation technology to be used as a gate line material, so that the working parameters of a cold electron tube device are not limited by the selection of the gate line material.
Ion implantation is a material modification technique for accelerating dopant ions and injecting the dopant ions into a solid target to change the physicochemical properties of the target, and has wide application in the fields of semiconductor device manufacturing, metal surface treatment and material characteristic research. Ion implantation can meet a wide variety of doping requirements. Ion implantation can achieve a wide variety of impurity profiles by controlling the type, energy and dose of implanted ions, and implanting the same or different impurities multiple times.
The interaction of magnetic impurities in the metal with normal electrons or superconducting electrons changes the resistance value and the critical temperature of the metal. Ion implantation has advantages in this regard, and can provide Parts Per Million (PPM) levels of implant concentration while ensuring high accuracy. Therefore, the inventor combines the requirements of the cold electron tube switch on the materials and tries to obtain the required cold electron tube switch by adopting an ion implantation method.
The invention provides an ion implantation-based cold electron tube switch, which comprises a gate line and a control line, wherein the control line is parallel to the gate line and is superposed on the gate line, and the gate line is made of a superconducting thin film obtained by an ion implantation method.
Further, the superconducting thin film includes a host thin film and ions implanted into the host thin film.
Further, the host thin film is an Al film or a Ti film.
Further, the thickness of the host thin film is 100 nm.
Further, the ion is a Mn ion or a Fe ion.
According to the ion implantation-based cold electron tube switch, the superconducting film obtained by the ion implantation method is used as a gate line material of the cold electron tube switch, and the critical temperature and the critical magnetic field of the superconducting film can be continuously regulated and controlled, so that the superconducting film with corresponding implantation concentration can be selected according to the working parameters required by the cold electron tube switch, and the working parameters of the cold electron tube switch are flexible.
The invention also provides a preparation method of the ion implantation-based cold electron tube switch, which comprises the following steps:
s1: providing a substrate, and forming a host film on the surface of the substrate;
s2: injecting ions into the host film according to a preset ion injection scheme to obtain a superconducting film;
s3: defining a photoresist mask required by a gate line on the superconducting thin film;
s4: etching the gate line, and removing the photoresist mask;
s5: growing an insulating layer on the gate line;
s6: growing a layer of Nb film on the insulating layer;
s7: defining a photoresist mask required by a control line on the Nb film;
s8: and etching out a control line, and removing the photoresist mask to obtain the cold electron tube switch.
Further, in step S2, an implantation method combining three implantation energies of 30KeV, 65KeV and 100KeV is adopted for ion implantation.
Further, the implant dose ratio corresponding to the three implant energies of 30KeV, 65KeV and 100KeV is 1:1.3: 3.5. The average concentration of the ions satisfies the following relationship:
wherein, C1、C2、C3The concentration distribution function is respectively under three implantation energies of 30KeV, 65KeV and 100 KeV.
Further, the average PPM value of the ions satisfies the following relation:
wherein, C0Is the atomic density of the host film.
According to the preparation method of the ion implantation-based cold electron tube switch, ions with different concentrations are implanted into the host film according to needs through an ion implantation method, so that the critical temperature and the critical magnetic field of the film are continuously regulated and controlled, and the working parameters of the cold electron tube switch are flexible.
Drawings
FIG. 1 is a schematic diagram of a prototype construction of a cryotron switch;
FIG. 2 is a schematic diagram of a configuration of an ion implantation based cold sub-tube switch according to an embodiment of the present invention;
FIG. 3 is a graph of critical magnetic field and critical temperature as a function of implant concentration for an AlMn thin film obtained by Mn ion implantation of a 100nm host thin film Al film in accordance with an embodiment of the present invention;
fig. 4 is a graph showing a simulation of the concentration distribution of Mn ion implanted 100nm Al film according to an embodiment of the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 2, an embodiment of the present invention provides an ion implantation based cold electron tube switch, which includes a gate line 10 and a control line 20, wherein the control line 20 is parallel to the gate line 10 and is stacked on the gate line 10, and the gate line 10 is made of a superconducting thin film obtained by an ion implantation method.
In an exemplary embodiment, the gate line 10 may be disposed on the substrate 30.
Compared with a cross-film cold electron tube switch, the linear cold electron tube switch (In-line Cryotron) with the control line parallel to and superposed with the gate line has smaller inductance of the control line and higher resistance of the gate line, thereby reducing the switching time constant of the switch circuit.
The superconducting film comprises a host film and ions injected into the host film, and the critical temperature and the critical magnetic field of the superconducting film can be continuously regulated and controlled by changing the injection concentration of the ions, namely the superconducting characteristic of the superconducting film is regulated and controlled, so that the working parameters of the switching device of the cold electron tube, such as the working temperature range and the power consumption of the switch, are regulated and controlled, and the switching device has flexibility. That is, according to the present invention, those skilled in the art can select the superconducting thin film with the corresponding injection concentration as the gate line according to the required operating parameters of the cold cathode tube switch. Particularly, the superconducting film with an extremely low critical magnetic field can be obtained through ion implantation, so that the control current of the cold electron tube switch is lower, and better device performance is obtained.
The material of the host thin film may be aluminum (Al), titanium (Ti), or the like, and the implanted ions may be manganese (Mn), iron (Fe), or the like.
The thickness of the host film may be around 100nm, which is most effective because a greater thickness requires a thicker insulating layer to increase the required control current, while a smaller thickness may make it difficult to obtain a uniform ion implantation concentration.
The principle of the present invention for continuously controlling the critical temperature and the critical magnetic field of the thin film is specifically described below by taking the host thin film as a 100nm Al film and the implanted ions as Mn ions.
As shown in fig. 3, the critical temperature and the critical magnetic field of the superconducting thin film can be continuously controlled by changing the implantation concentration of Mn ions. Moreover, the critical magnetic field of the superconducting thin film obtained by the ion implantation method is very small, the critical magnetic field value under the injection concentration of 1700PPM is only 16Oe, and the superconducting thin film serving as a gate line material of the cold electron tube switch can improve the performance of the cold electron tube switch.
In order to obtain a cryotron switch in which the superconducting thin film is a gate line, an ion implantation scheme, i.e., the implantation concentration of ions, needs to be determined.
In this example, the Monte Carlo analysis of ion scattering was performed using SRIM (stopping and Range of ion in Matter) software. SRIM is a set of computer programs that can calculate the interaction between ions and species. SRIM randomly selects the collision parameters for the next ion based on monte carlo simulation. Using SRIM, the three-dimensional distribution of implanted ions in a solid material, and target material damage caused by ion implantation, etc. can be modeled. SRIM is popular in ion implantation research and has wide application in the field of radiation materials science.
First, the concentration distribution of Mn ions in the depth direction when the Al film is used as a host thin film for Mn ion implantation is simulated. As shown in fig. 4, the concentration distribution of Mn ions in the depth direction is shown as a gaussian distribution. To obtain a more uniform concentration profile in the depth direction, an implantation scheme combining multiple implantation energies is selected, such that the overall concentration profile is uniform in the depth direction by adjusting the implant dose ratio between the energies.
In the present example, an implantation scheme combining three energies of 30KeV, 65KeV and 100KeV was selected such that the gaussian peak of each selected energy corresponds to the quartering point of the host film thickness, and by setting the implantation dose ratio of the three energies to 1:1.3:3.5, a more uniform Mn ion concentration distribution within a depth of 100nm was obtained.
After the implantation energy and the implantation dose ratio thereof are determined, the distribution of the ion concentration under a reference implantation scheme can be simulated, and the average PPM value thereof can be calculated. For example, the implantation doses at three energies of 30KeV, 65KeV and 100KeV are 1 x 1014Atoms/cm2、1.3*1014Atoms/cm2、3.5*1014Atoms/cm2Under the reference implantation scheme, the concentration distribution function of the Al film at 100nm is respectively C through simulation of SRIM1、C2、C3Then the average concentration is:
the average PPM value is:
wherein, C0Is the atomic density of the host film, and in this example, the atomic density of the Al film is 6.02 x 1022Atoms/cm3。
After the PPM value of the reference injection scheme is obtained, the injection dosage required by other injection schemes can be determined only by adjusting according to the proportion of the PPM value on the basis of the reference injection scheme. For example, for achieving a 200PPM value implant target, the required implant dose may be obtained by multiplying a factor of 2000/832.5 based on the reference implant scheme, i.e., the implant doses of 30KeV, 65KeV and 100KeV with three energies of 2.40 x 1014Atoms/cm2、3.13*1014Atoms/cm2、8.41*1014Atoms/cm2。
The preparation process of the cryotron switch using the ion-implanted AlMn film as the gate line material comprises the following steps:
s1: and (3) Al film growth: 4 inch SiO is selected2The method comprises the following steps of taking an/Si silicon wafer as a substrate, and after plasma cleaning is carried out on the surface of the substrate, carrying out sputtering deposition on a 100nm Al film on the surface of the substrate by using a magnetron sputtering technology. After the Al film growth is finished, the Al film is divided into substrates with the size of 40 x 40mm under the protection of the photoresist, and finally the photoresist for protection is removed.
S2: ion implantation of Mn ions: and determining an implantation scheme by taking the required Mn ion implantation concentration as an objective, and implanting Mn ions into the Al film in the step S1 according to the energy of the Mn ions required to be implanted and the corresponding implantation dosage determined in the implantation scheme to obtain the AlMn film (namely the superconducting film).
S3: defining a door line: and defining a photoresist mask required by a gate line on the AlMn thin film by using a photoetching technology.
S4: AlMn etching: the gate lines are defined using wet etching and then the photoresist mask is removed.
S5：SiO2Growing: growing a layer of SiO with the thickness of 160nm on the gate line by using a plasma enhanced chemical vapor deposition technology2Thin film (i.e., insulating layer).
S6: and (3) growing an Nb film: using magnetron sputtering technique on SiO2And growing a 210nm thick Nb film on the film. Nb filmMay be replaced with Pb, which is not a limitation of the present invention.
S7: defining a control line: and defining a photoresist mask of the control line on the Nb film by using a photoetching technology.
S8: and (3) Nb etching: and defining a control line by using a reactive ion etching technology, and then removing the photoresist mask to obtain the cold electron tube switch.
S9: scribing: and (4) scribing the substrate into the required 35 x 35mm chips under the protection of the photoresist, and removing the protective photoresist on the surfaces of the chips to obtain the chips.
When the host film and the implanted ions are other materials, only the materials in the above steps need to be replaced, and the rest steps are the same, which are not described herein again.
According to the ion implantation-based cold electron tube switch provided by the embodiment of the invention, the superconducting film obtained by adopting the ion implantation method is used as a gate line material of the cold electron tube switch, and the critical temperature and the critical magnetic field of the superconducting film can be continuously regulated and controlled, so that the superconducting film with corresponding implantation concentration can be selected according to the working parameters required by the cold electron tube switch, and the working parameters of the cold electron tube switch have flexibility.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in order to avoid obscuring the invention.
Claims (10)
1. The ion implantation-based cold electron tube switch comprises a gate line and a control line, and is characterized in that the control line is parallel to the gate line and is superposed on the gate line, and the gate line is made of a superconducting thin film obtained by an ion implantation method.
2. The ion implantation-based cold sub-tube switch of claim 1, wherein the superconducting thin film comprises a host thin film and ions implanted into the host thin film.
3. The ion implantation-based cold electron tube switch of claim 2, wherein the host thin film is an Al film or a Ti film.
4. The ion implantation-based cold electron tube switch of claim 3, wherein the thickness of the host thin film is 100 nm.
5. The ion implantation-based cold sub-tube switch of claim 2, wherein the ions are Mn ions or Fe ions.
6. A preparation method of a cold-junction tube switch based on ion implantation is characterized by comprising the following steps:
s1: providing a substrate, and forming a host film on the surface of the substrate;
s2: injecting ions into the host film according to a preset ion injection scheme to obtain a superconducting film;
s3: defining a photoresist mask required by a gate line on the superconducting thin film;
s4: etching the gate line, and removing the photoresist mask;
s5: growing an insulating layer on the gate line;
s6: growing a layer of Nb film on the insulating layer;
s7: defining a photoresist mask required by a control line on the Nb film;
s8: and etching out a control line, and removing the photoresist mask to obtain the cold electron tube switch.
7. The method for manufacturing a cold electron tube switch according to claim 6, wherein in step S2, the ion implantation is performed by combining three implantation energies of 30KeV, 65KeV and 100 KeV.
8. The method for preparing a cold electron tube switch based on ion implantation according to claim 7, wherein the implantation dose ratio corresponding to the three implantation energies of 30KeV, 65KeV and 100KeV is 1:1.3: 3.5.
9. The method of claim 8, wherein the average concentration of the ions satisfies the following relationship:
wherein, C1、C2、C3The concentration distribution function is respectively under three implantation energies of 30KeV, 65KeV and 100 KeV.
10. The method of claim 9, wherein the average PPM value of the ions satisfies the following relationship:
wherein, C0Is the atomic density of the host film.
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| CN202111039268.2A CN113764569A (en) | 2021-09-06 | 2021-09-06 | Ion implantation-based cold-junction tube switch and preparation method thereof |
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| CN202111039268.2A CN113764569A (en) | 2021-09-06 | 2021-09-06 | Ion implantation-based cold-junction tube switch and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351774A (en) * | 1963-10-09 | 1967-11-07 | Ncr Co | Superconducting circuit constructions employing logically related inductively coupled paths to reduce effective magnetic switching inductance |
| CN111575668A (en) * | 2020-04-14 | 2020-08-25 | 中国科学院上海微系统与信息技术研究所 | Magnetic doped superconducting thin film, preparation method thereof and superconducting transition edge detector |
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2021
- 2021-09-06 CN CN202111039268.2A patent/CN113764569A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3351774A (en) * | 1963-10-09 | 1967-11-07 | Ncr Co | Superconducting circuit constructions employing logically related inductively coupled paths to reduce effective magnetic switching inductance |
| CN111575668A (en) * | 2020-04-14 | 2020-08-25 | 中国科学院上海微系统与信息技术研究所 | Magnetic doped superconducting thin film, preparation method thereof and superconducting transition edge detector |
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