CN113759221A - Terahertz sensor chip for insulator monitoring and insulator monitoring method - Google Patents

Terahertz sensor chip for insulator monitoring and insulator monitoring method Download PDF

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CN113759221A
CN113759221A CN202110995296.5A CN202110995296A CN113759221A CN 113759221 A CN113759221 A CN 113759221A CN 202110995296 A CN202110995296 A CN 202110995296A CN 113759221 A CN113759221 A CN 113759221A
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terahertz
insulator
signal
frequency
circuit
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高嵩
刘建军
刘洋
陶风波
赵�衍
陈杰
邱刚
谈笑
胡秦然
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Electric Power Research Institute of State Grid Jiangsu Electric Power Co Ltd
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Electric Power Research Institute of State Grid Jiangsu Electric Power Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1245Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of line insulators or spacers, e.g. ceramic overhead line cap insulators; of insulators in HV bushings

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Abstract

The invention discloses a terahertz sensor chip for insulator monitoring and an insulator monitoring method, wherein an insulator ceramic structure is monitored on line; the terahertz wave generating device comprises a terahertz transmitting circuit, a terahertz receiving circuit, a low-frequency waveform generator for generating periodic waveforms and a data processing circuit; the terahertz transmitting circuit transmits a terahertz signal to the interior of the insulator, the terahertz receiving circuit receives a reflected signal from the interior of the insulator, and the reflected signal and the transmitted terahertz signal are subjected to frequency mixing to obtain a difference frequency signal; digitizing the difference frequency signal to obtain a digitized difference frequency signal; and extracting frequency information of the digitized difference frequency signal, and calculating according to the following formula to obtain the position of the internal crack of the insulator.

Description

Terahertz sensor chip for insulator monitoring and insulator monitoring method
Technical Field
The invention belongs to the technical field of insulator monitoring in an electric power system, and particularly relates to a terahertz sensor chip for insulator monitoring and an insulator monitoring method.
Background
The insulator sets up and realizes electrical insulation and mechanical fastening on the transmission line or transformer substation, but long-term the back of using, the inside crackle that can produce of insulator, for can in time discovering the crackle, adopts the mode of artifical patrolling and examining to carry out periodic inspection usually, and the concrete mode is for carrying out visual inspection through range estimation or other means, nevertheless can not reliably investigate inside crackle.
In order to ensure safety, the replacement period of the insulators is set to be far shorter than the service life of the insulators, and the insulators are replaced in large batches.
Disclosure of Invention
The purpose of the invention is as follows: the invention provides a terahertz sensor chip for insulator monitoring and an insulator monitoring method for realizing real-time detection of the internal state of an insulator.
The technical scheme is as follows: a terahertz sensor chip for insulator monitoring comprises:
the terahertz transmitting circuit is used for transmitting terahertz signals to the interior of the insulator;
the terahertz receiving circuit is used for receiving a reflected signal from the inside of the insulator and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal; digitizing the difference frequency signal to obtain a digitized difference frequency signal;
and the data processing circuit is used for extracting frequency information of the digitized difference frequency signal and obtaining the position of the internal crack of the insulator based on the frequency information.
Further, the device also comprises a low-frequency waveform generator for generating a periodic waveform;
the terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna which are sequentially connected; the output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, one path of output of the terahertz power divider enters the interior of the insulator through the terahertz transmitting antenna, and the other path of output of the terahertz power divider enters the local oscillator port of the terahertz frequency mixer of the terahertz receiving circuit;
the terahertz receiving circuit comprises a terahertz receiving antenna, a terahertz low-noise amplifier, a terahertz frequency mixer, an intermediate frequency amplifier and an analog-to-digital converter which are sequentially connected; the terahertz receiving antenna is used for receiving a reflected signal which enters the insulator and is reflected when encountering a crack, and the reflected signal enters a radio frequency port of the terahertz frequency mixer after being amplified by the terahertz low-noise amplifier;
the terahertz frequency mixer is used for mixing a signal from a radio frequency port and a signal from a local oscillator port to generate a difference frequency signal;
the difference frequency signal sequentially enters an intermediate frequency amplifier and an analog-to-digital converter to obtain a digitized difference frequency signal;
and the data processing circuit is used for extracting frequency information of the digitized difference frequency signal to obtain the position of the internal crack of the insulator.
Further, the crack position is the distance from the internal crack of the insulator to the sensor, and the crack position is calculated according to the following formula:
Figure BDA0003233650010000021
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of the electromagnetic wave in vacuum, and epsilonrDenotes the relative dielectric constant, μ, of the materialrRepresenting the relative permeability of the material.
Further, the terahertz amplifier comprises a transistor and a compensation circuit arranged between a drain electrode and a grid electrode of the transistor; the compensation circuit is a capacitance cancellation circuit.
Further, the transistor is a transistor of a common source structure or a common emitter structure.
Further, the compensation circuit includes an inductor or a passive device equivalent to an inductor.
Further, the terahertz voltage-controlled oscillator outputs a terahertz frequency signal by a harmonic power synthesis method.
Further, the harmonic power synthesis method includes:
designing the oscillation frequency of the terahertz voltage-controlled oscillator to be 1/n of the working frequency, and working the n-th harmonic signal in a same-phase mode;
and taking a plurality of n-th harmonics for in-phase superposition to obtain an output signal.
Further, the terahertz voltage-controlled oscillator comprises an active circuit, a first variable capacitor circuit, a differential inductor circuit for forming a resonant circuit, a first voltage input end for performing capacitance value adjustment on the active circuit, a second voltage input end for performing capacitance value adjustment on the first variable capacitor circuit, and a third voltage input end for performing capacitance value adjustment on the differential inductor circuit;
the active circuit is a cross-coupled differential structure consisting of a transistor T1 and a transistor T2;
the first variable capacitance circuit comprises two back-to-back variable capacitances formed by a transistor T3 and a transistor T4 by connecting the drain and source;
the differential inductance circuit comprises a transformer and a second variable capacitance circuit, a secondary coil of the transformer is connected with the second variable capacitance circuit, and an output signal of the terahertz voltage-controlled oscillator is output from a primary coil of the transformer according to the designed relation between the oscillation frequency and the working frequency; the second variable capacitance circuit is two back-to-back variable capacitances formed by transistor T5 and transistor T6 by connecting the drain and source.
The invention also discloses an insulator monitoring method, which comprises the following steps:
step 1: transmitting a terahertz signal to the interior of the insulator through the terahertz sensor chip for insulator monitoring;
step 2: receiving a reflected signal from the inside of the insulator, and mixing the reflected signal with a transmitted terahertz signal to obtain a difference frequency signal;
and step 3: digitizing the difference frequency signal to obtain a digitized difference frequency signal;
and 4, step 4: extracting frequency information of the digitized difference frequency signal, and calculating according to the following formula to obtain the position of the internal crack of the insulator:
Figure BDA0003233650010000031
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of the electromagnetic wave in vacuum, and epsilonrDenotes the relative dielectric constant, μ, of the materialrRepresenting the relative permeability of the material.
Has the advantages that: the sensor chip provided by the invention realizes terahertz emission and terahertz echo reception, and judges the position of the crack inside the insulator from the sensor chip through echo analysis, thereby realizing online monitoring of each insulator.
Drawings
FIG. 1 is a schematic structural diagram of a terahertz chip system;
FIG. 2 is a diagram of a periodic triangular wave generated by a low frequency waveform generator;
FIG. 3 is a graph of the output frequency of a voltage controlled oscillator versus time;
FIG. 4 is a schematic diagram of difference frequency generated by transmitting and receiving terahertz;
FIG. 5 is a schematic diagram of a terahertz amplifier;
fig. 6 is a schematic diagram example of a terahertz broadband voltage-controlled oscillator.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings and embodiments.
On the premise of ensuring small volume and low power consumption, the invention provides a terahertz sensor chip based on a solid-state circuit, as shown in fig. 1, the terahertz sensor chip comprises a terahertz transmitting circuit, a terahertz receiving circuit, a low-frequency waveform generator for generating periodic triangular waves and a data processing circuit; the output end of the low-frequency waveform generator is connected with the terahertz transmitting circuit, and the data processing circuit is connected with the terahertz receiving circuit; the terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna; the terahertz receiving circuit comprises an analog-to-digital converter, an intermediate frequency amplifier, a terahertz frequency mixer, a terahertz low-noise amplifier and a terahertz receiving antenna; the low frequency waveform generator includes a digital synthesizer and a digital-to-analog converter.
The output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, as shown in fig. 2, the low-frequency waveform generator generates a series of periodic triangular waves in a low frequency band (below 10 MHz), the voltage amplitude of the triangular waves changes periodically from V1 to V2, and the control voltage of the terahertz voltage-controlled oscillator is controlled by the periodically changing triangular waves. Assuming that the voltage and the frequency of the terahertz voltage-controlled oscillator are in a linear relationship, when the control voltage of the terahertz voltage-controlled oscillator is a periodic triangular wave, the relationship between the terahertz frequency output by the terahertz voltage-controlled oscillator and the time is also in the form of the triangular wave. As shown in fig. 3, if the voltage control range of the thz voltage-controlled oscillator is V1 to V2 and the operating frequency range is F1 to F2, the output frequency of the thz voltage-controlled oscillator is linearly changed with time between F1 and F2. The signal is amplified by a terahertz amplifier and then enters a terahertz power divider. One output of the terahertz power divider is transmitted into the insulator through the terahertz antenna, and the other output of the terahertz power divider is transmitted into a local oscillator port of a frequency mixer of the terahertz receiving circuit. The terahertz waves entering the insulator meet cracks inside the insulator, are reflected back to the terahertz chip, enter the terahertz receiving channel, pass through the terahertz low-noise amplifier and enter a radio frequency port of the terahertz frequency mixer. The signal is mixed with a terahertz signal entering a local oscillation port from a transmitting circuit. Since the reflected terahertz wave generates a delay after passing through the propagation path, a difference frequency is generated after mixing with the terahertz signal at the local oscillation port, as shown in fig. 4. The frequency of the difference frequency is related to the delay of the propagation path, the longer the path, the larger the delay, and the higher the frequency of the difference frequency. Typically, the frequency difference frequency is in the kHz to MHz range. The difference frequency signal enters an intermediate frequency amplifier and an analog-to-digital converter in sequence and is converted into a digital signal.
The data processing circuit is responsible for extracting frequency information of the digitized difference frequency signal, and calculating the distance between the internal crack of the insulator and the sensor and the position of the crack according to the following formula:
Figure BDA0003233650010000041
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the period of the triangular wave, B represents the operating bandwidth of the voltage-controlled oscillator (F2-F1), c represents the propagation speed of the electromagnetic wave in vacuum, and epsilonrDenotes the relative dielectric constant, μ, of the materialrRepresenting the relative permeability of the material.
In the above chip structure, the circuit with design challenge includes a terahertz amplifier and a terahertz voltage-controlled oscillator.
For the terahertz amplifier, if a III/V integrated circuit process is adopted, the working frequency can be designed to be 200 to 1000GHz, and the specific working evaluation rate depends on the cost of the manufacturing process. If silicon technology integrated circuits are used, the operating frequency can be designed to be between 100 and 200 GHz. The selection of the operating frequency mainly takes the operating bandwidth and the signal-to-noise ratio into consideration. A wider working bandwidth is easily obtained at a high working frequency, so that the distance resolution of crack detection can be improved, but the higher working frequency brings poorer signal-to-noise ratio, so that the distance precision error is increased. The main challenge in circuit design of terahertz amplifiers is gain degradation. Because the amplifier works in the terahertz frequency band, the Miller capacitance effect of the transistor can seriously affect the gain of the amplifier, and a capacitance offset circuit needs to be added between the drain electrode and the grid electrode, so that the gain of the amplifier in the terahertz frequency band is improved. The circuit schematic of the terahertz amplifier recommends the use of a common source or cascode amplifier structure. As shown in fig. 5, taking a common source amplifier as an example, the input terminal of the amplifier is at the gate, and the output terminal is at the drain. The compensation circuit feeds the drain output back to the input port using an inductor, or some passive device equivalent to an inductor, including but not limited to a transmission line, a transformer, or a passive device where the input and output terminals exhibit inductive properties.
The main challenge for terahertz voltage controlled oscillators is the operating frequency and the bandwidth of the frequency modulation.
The solution for the working frequency is: in a terahertz frequency band, the working speed of a transistor is remarkably poor, and the transistor is difficult to be used as an active circuit of an oscillator. Such as designing the oscillator at half the operating frequency with the second harmonic of the oscillator as the transmit signal, or designing the oscillator at 1/3 or 1/4 at the operating frequency and then using the third or fourth harmonic as the output signal. In order to keep the output power of the higher harmonics, the invention also introduces a power synthesis principle, namely, a plurality of higher harmonic signals of one oscillator are designed to work in a same-phase mode and then are superposed in a same phase, thereby obtaining higher power. The design of the higher harmonic power synthesis has the advantages that on one hand, the high-speed performance of the transistor at lower frequencies is utilized to ensure the stable operation of the oscillator, and on the other hand, the output power of the higher harmonic is ensured to be large enough.
The solution for the bandwidth modulation is as follows: the parasitic capacitance effect of the transistor is very significant, which causes the specific gravity of the variable capacitance in the total capacitance to be significantly reduced, and thus the relative bandwidth of the tuning band caused by the variable capacitance starts to be reduced. The present invention proposes to combine multiple frequency modulation techniques to improve the bandwidth of the frequency modulation, including but not limited to variable capacitance, transistor voltage frequency modulation, variable inductance, and other techniques.
Referring to fig. 6, a terahertz voltage-controlled oscillator is described by taking a differential LC voltage-controlled oscillator as an example. The whole oscillator is designed to be a differential structure, and the oscillation frequency is 1/2 of the output frequency. At the oscillation frequency, signals at the left end and the right end are 180-degree opposite phases; at the second harmonic, the signals at the left and right ends are in phase. And a second harmonic signal is output from a center tap of the upper-end transformer, so that the required terahertz signal power is doubled. The transistors T1 and T2 form a cross-coupled differential structure that powers the passive resonant circuit as the active circuit portion of the oscillator. The parasitic capacitance of these two transistors can be adjusted by the pad voltage Vctl 1. The transistors T3 and T4 form two back-to-back variable capacitors by connecting the drain and source, and their equivalent capacitance can be adjusted by Vctl 2; the differential inductance used to form the resonant circuit is implemented using a transformer with its secondary connected to another set of back-to-back variable capacitors (consisting of T5 and T6). When the capacitance value of the variable capacitor is adjusted by adjusting Vctl3, the equivalent inductance of the primary coil is changed. The three technologies are combined to form three frequency control ports, Vctl1, Vctl2 and Vctl 3. Thus, the respective bandwidth of the three ports can be combined to form a wider operating bandwidth. In addition, the output frequency is twice of the oscillation frequency, so the frequency modulation range of the oscillation frequency can be doubled on the second harmonic wave.
The terahertz transmitting and receiving antenna can be integrated on a chip or inside a chip package, depending on the compromise between cost and antenna gain. The on-chip antenna has the advantages of low loss of the connecting wire and the disadvantages of low antenna gain, large chip area and high cost. An off-chip packaged internal antenna can provide antenna gain, but the assembly cost of the connection lines is high. The design of the antenna is based on conventional antenna types such as monopole, dipole, loop, bow-tie, etc.
Through embedding the sensor chip of above-mentioned structure in every insulator, this sensor chip realizes terahertz transmission and terahertz echo receipt to judge the position of insulator inside crackle distance sensor chip through echo analysis, realize the on-line monitoring to every insulator, monitoring result accessible wireless communication passes back to the electric wire netting control center.

Claims (10)

1. The utility model provides a terahertz sensor chip for insulator monitoring which characterized in that: the method comprises the following steps:
the terahertz transmitting circuit is used for transmitting terahertz signals to the interior of the insulator;
the terahertz receiving circuit is used for receiving a reflected signal from the inside of the insulator and mixing the reflected signal with the transmitted terahertz signal to obtain a difference frequency signal; digitizing the difference frequency signal to obtain a digitized difference frequency signal;
and the data processing circuit is used for extracting frequency information of the digitized difference frequency signal and obtaining the position of the internal crack of the insulator based on the frequency information.
2. The terahertz sensor chip for insulator monitoring according to claim 1, characterized in that: the low-frequency waveform generator is used for generating periodic triangular waves;
the terahertz transmitting circuit comprises a terahertz voltage-controlled oscillator, a terahertz amplifier, a terahertz power divider and a terahertz transmitting antenna which are sequentially connected; the output end of the low-frequency waveform generator is connected with the voltage control end of the terahertz voltage-controlled oscillator, one path of output of the terahertz power divider enters the interior of the insulator through the terahertz transmitting antenna, and the other path of output of the terahertz power divider enters the local oscillator port of the terahertz frequency mixer of the terahertz receiving circuit;
the terahertz receiving circuit comprises a terahertz receiving antenna, a terahertz low-noise amplifier, a terahertz frequency mixer, an intermediate frequency amplifier and an analog-to-digital converter which are sequentially connected; the terahertz receiving antenna is used for receiving a reflected signal which enters the insulator and is reflected when encountering a crack, and the reflected signal enters a radio frequency port of the terahertz frequency mixer after being amplified by the terahertz low-noise amplifier;
the terahertz frequency mixer is used for mixing a signal from a radio frequency port and a signal from a local oscillator port to generate a difference frequency signal;
the difference frequency signal sequentially enters an intermediate frequency amplifier and an analog-to-digital converter to obtain a digitized difference frequency signal;
and the data processing circuit is used for extracting frequency information of the digitized difference frequency signal to obtain the position of the internal crack of the insulator.
3. The terahertz sensor chip for insulator monitoring as claimed in claim 2, wherein: the crack position is the distance from a crack in the insulator to the sensor, and is calculated according to the following formula:
Figure FDA0003233649000000011
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of the electromagnetic wave in vacuum, and epsilonrDenotes the relative dielectric constant, μ, of the materialrRepresenting the relative permeability of the material.
4. The terahertz sensor chip for insulator monitoring as claimed in claim 2, wherein: the terahertz amplifier comprises a transistor and a compensation circuit arranged between a drain electrode and a grid electrode of the transistor; the compensation circuit is a capacitance cancellation circuit.
5. The terahertz sensor chip for insulator monitoring according to claim 4, characterized in that: the transistor is of a common source structure or a common emitter structure.
6. The terahertz sensor chip for insulator monitoring according to claim 4, characterized in that: the compensation circuit includes an inductance or a passive device equivalent to an inductance.
7. The terahertz sensor chip for insulator monitoring as claimed in claim 2, wherein: the terahertz voltage-controlled oscillator outputs a terahertz frequency signal by a harmonic power synthesis method.
8. The terahertz sensor chip for insulator monitoring according to claim 7, characterized in that: the harmonic power synthesis method comprises the following steps:
designing the oscillation frequency of the terahertz voltage-controlled oscillator to be 1/n of the working frequency, and working the n-th harmonic signal in a same-phase mode;
and taking a plurality of n-th harmonics for in-phase superposition to obtain an output signal.
9. The terahertz sensor chip for insulator monitoring as claimed in claim 2, wherein: the terahertz voltage-controlled oscillator comprises an active circuit, a first variable capacitor circuit, a differential inductance circuit used for forming a resonance circuit, a first voltage input end used for carrying out capacitance value adjustment on the active circuit, a second voltage input end used for carrying out capacitance value adjustment on the first variable capacitor circuit and a third voltage input end used for carrying out capacitance value adjustment on the differential inductance circuit;
the active circuit is a cross-coupled differential structure consisting of a transistor T1 and a transistor T2;
the first variable capacitance circuit comprises two back-to-back variable capacitances formed by a transistor T3 and a transistor T4 by connecting the drain and source;
the differential inductance circuit comprises a transformer and a second variable capacitance circuit, a secondary coil of the transformer is connected with the second variable capacitance circuit, and an output signal of the terahertz voltage-controlled oscillator is output from a primary coil of the transformer according to the designed relation between the oscillation frequency and the working frequency; the second variable capacitance circuit is two back-to-back variable capacitances formed by transistor T5 and transistor T6 by connecting the drain and source.
10. An insulator monitoring method is characterized in that: the method comprises the following steps:
step 1: transmitting a terahertz signal to the inside of an insulator through the terahertz sensor chip for insulator monitoring as claimed in any one of claims 1 to 9;
step 2: receiving a reflected signal from the inside of the insulator, and mixing the reflected signal with a transmitted terahertz signal to obtain a difference frequency signal;
and step 3: digitizing the difference frequency signal to obtain a digitized difference frequency signal;
and 4, step 4: extracting frequency information of the digitized difference frequency signal, and calculating according to the following formula to obtain the position of the internal crack of the insulator:
Figure FDA0003233649000000021
wherein D represents the distance from the sensor to the crack, dF represents the difference frequency, T represents the waveform period generated by the low-frequency waveform generator, B represents the working bandwidth of the terahertz voltage-controlled oscillator, c represents the propagation speed of the electromagnetic wave in vacuum, and epsilonrDenotes the relative dielectric constant, μ, of the materialrRepresenting the relative permeability of the material.
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CN212483899U (en) * 2020-10-10 2021-02-05 成都泰格微电子研究所有限责任公司 Miniaturized terahertz near-field detector
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