CN113758325A - VC radiator with built-in copper/diamond sintered wick and preparation method thereof - Google Patents
VC radiator with built-in copper/diamond sintered wick and preparation method thereof Download PDFInfo
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- CN113758325A CN113758325A CN202110928563.7A CN202110928563A CN113758325A CN 113758325 A CN113758325 A CN 113758325A CN 202110928563 A CN202110928563 A CN 202110928563A CN 113758325 A CN113758325 A CN 113758325A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/04—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure
- F28D15/046—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes with tubes having a capillary structure characterised by the material or the construction of the capillary structure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
- H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Microelectronics & Electronic Packaging (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a VC radiator with a built-in copper/diamond sintered wick and a preparation method thereof. VC radiator contains the cope match-plate pattern, lower casing plate, the cavity has between the upper and lower casing plate, install capillary imbibition core B in the cope match-plate pattern, the capillary imbibition core A who installs in the lower casing plate, capillary imbibition core A is for having three-dimensional porous structure's copper diamond sintered body, the even interval of width direction is provided with a plurality of support columns along the lower casing plate internal surface, and the center of lower casing plate internal surface is provided with the cavity simultaneously, capillary imbibition core A evenly distributed is in the passageway of formation in the middle of arbitrary two support columns to and in the cavity. The VC radiator structure prepared by the invention is more suitable for the electronic packaging requirement, the copper/diamond sintered body liquid absorption core can further improve the temperature equalization and heat dissipation performance of the VC radiator, and the VC radiator structure has more competitiveness in the field of heat management of high-power electronic equipment.
Description
Technical Field
The invention discloses a VC radiator with a built-in copper/diamond sintered wick and a preparation method thereof, belonging to the technical field of thermal management equipment.
Background
With the advent of the 5G era, various electronic devices are being upgraded to meet the increasing use requirements, and the development is continuously going to the direction of miniaturization, high integration and high performance. With the rapidly increasing operating power and the ever smaller volume requirements, the power density of electronic components has increased dramatically. When the electronic device is operated at high power in such a small area, a remarkable amount of heat is generated. When the heat cannot be dissipated in time, the electronic device is disabled, damaged or even melted down. The problem of heat dissipation in high power electronic devices has become a bottleneck in the application of new generation electronic devices.
The VC plate is used as a heat dissipation device which utilizes gas-liquid phase change to efficiently transfer heat from the hot end to the cold end, benefits from excellent temperature equalization performance and high-efficiency heat dissipation efficiency, and compared with a traditional heat pipe, the heat dissipation requirement of a chip can be met due to the two-dimensional plane heat transfer characteristic brought by the flat plate structure of the VC plate. At present, the flat heat pipe is widely applied to LEDs, CPUs and electronic communication equipment, and further replaces the traditional round pipe type heat pipe, so that the flat heat pipe has wide prospects in the application of high-power components for laser weapons and national defense and military industry in the future.
The capillary wick is used as a VC board core component, is mostly copper-based at present, but is intermediate to the low thermal conductivity of copper, so that the requirement of high-power heat dissipation is difficult to meet in the future.
Diamond is used as a material with the best heat conducting property in nature, has high heat conducting property and low thermal expansion property, has unique advantages as a heat conducting reinforcing material, but is compounded with a copper liquid absorbing core in a coating mode at present, has low diamond content and has limited improvement on heat conducting property.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a VC radiator with a built-in copper/diamond sintered wick, which has a reasonable pore structure, excellent heat-conducting property, wide heat-radiating area and good hydrophilicity, and a preparation method thereof. Compared with the traditional VC board, the VC radiator provided by the invention is structurally closer to the packaging requirement of electronic devices, has obvious advantage on radiating performance, and can meet the radiating requirement of new-generation high-power electronic devices.
In order to achieve the purpose, the invention adopts the following technical scheme:
the VC radiator with the built-in copper/diamond sintered wick comprises an upper shell plate and a lower shell plate, wherein a cavity is formed between the upper shell plate and the lower shell plate, a capillary wick B is installed in the upper shell plate, a capillary wick A is installed in the lower shell plate, the capillary wick A is a copper/diamond sintered body with a three-dimensional porous structure, the mass fraction of diamond in the copper/diamond sintered body is 10-90%, and the porosity of the copper/diamond sintered body is 40-80%.
Preferably, the porosity of the copper/diamond sintered body is 50 to 75%.
The inventor finds that the porosity of the copper/diamond sintered body is controlled in the range, the porous material has more internal pores, more communication channels and reasonable pore diameter, working medium liquid flows conveniently, and the heat dissipation performance of the VC plate is improved.
Preferably, in the copper/diamond sintered body, the mass fraction of diamond is 35 to 60%.
Preferably, the preparation process of the copper/diamond sintered body comprises the following steps: and depositing a transition layer on the diamond particles, plating copper on the surface of the diamond particles containing the plating layer to obtain diamond particles containing copper coating layers, mixing the diamond particles containing the copper coating layers with copper powder to obtain mixed powder, loosely loading the mixed powder in a graphite mould, and sintering to obtain the copper/diamond sintered body.
Further preferably, the transition layer material is selected from one or more of nickel, niobium, tantalum, titanium, cobalt, tungsten, molybdenum and chromium, and the thickness of the transition layer is 0.5-30 μm.
In the invention, as long as the requirements of the thickness and the good bonding property of the transition layer can be met, the preparation method of the transition layer is not limited, and for example, one of electroplating, chemical plating, evaporation, magnetron sputtering, chemical vapor deposition and physical vapor deposition in the prior art can be adopted.
Further preferably, the transition layer is obtained by a magnetron sputtering method, the deposition power of the magnetron sputtering is 100-300W, and the deposition time of the magnetron sputtering is 20-90 min.
Further preferably, the copper plating on the surfaces of the diamond particles adopts magnetron sputtering deposition, a copper target is used as a raw material, the deposition power is 100-300W, and the deposition time is 20-120 min.
Further preferably, the thickness of the copper cladding layer is 2-30 μm, preferably 2-9 μm.
In the preparation process of the copper/diamond sintered body, the thickness of the copper cladding layer is controlled to be 2-30 μm by controlling deposition parameters, if the copper cladding layer is too thin, the bonding effect is difficult to exert, diamond particles are easy to separate from copper in the sintering process, the integral mechanical strength of the liquid absorption core after sintering is too low, and if the copper cladding layer is too thick, the content of low-heat-conduction metal materials around diamond is increased, namely phase transformation is performed to reduce the content of diamond, so that the integral heat conduction performance is reduced.
More preferably, the particle size of the copper powder is 40 to 150 μm, and the particle size of the diamond particles is 75 to 500 μm.
In the present invention, the porosity of the copper/diamond sintered body obtained in the present invention can be effectively controlled by controlling the particle diameters of the copper powder and diamond particles within the above ranges, in combination with the ratio of the copper and copper-containing coating layers in the diamond particles.
More preferably, the particle size of the copper powder is 60-150 μm, and the particle size of the diamond is 150-500 μm.
Further preferably, the mass fraction of the diamond particles of the copper-containing coating layer in the mixed powder is 10 to 100%. Preferably 20 to 70%, and more preferably 40 to 50%.
In the present invention, it is very important that the mixed powder is loosely packed in a graphite mold, and solid-phase sintering is performed without positive pressure, and a loose granular three-dimensional porous copper/diamond sintered body can be obtained due to gaps between particles.
Further preferably, the sintering is carried out in a vacuum atmosphere or a reduction atmosphere, the sintering temperature is 700-1000 ℃, preferably 800-950 ℃, and the sintering time is 30-90 min.
More preferably, the temperature rise process of the sintering is as follows: the temperature is raised to 750 ℃ at the speed of 4-12 ℃/min, preferably 5-10 ℃/min, then raised to 950 ℃ at the speed of 800 ℃ at the speed of 1-5 ℃/min, preferably 2-4 ℃/min, and the temperature is preserved for 30-90 min.
The inventor finds that because of the difference of the thermal expansion coefficient between diamond and copper, when other metals are not doped and the co-sintering is carried out, the interface is stripped due to the excessively high temperature rising rate, so that the copper and the diamond are easily stripped, and the combination of the copper and the diamond can be ensured according to the temperature rising procedure.
According to the preferable scheme, the inner surface of the lower shell plate is provided with a plurality of supporting columns at uniform intervals along the width direction, the center of the inner surface of the lower shell plate is provided with a concave cavity, and the capillary liquid absorption cores A are uniformly distributed in a channel formed between any two supporting columns and in the concave cavity.
In the present invention, the inner surface of the lower shell plate refers to a surface that forms a cavity in cooperation with the upper shell plate.
Preferably, capillary wick B is one or more selected from the group consisting of a wire mesh metal, a sintered metal powder, a sintered metal fiber, and a metal foam.
In a preferable scheme, the cavity contains working fluid.
The invention discloses a preparation method of a VC radiator with a built-in copper/diamond sintered wick, which comprises the following steps: placing a capillary wick B in an upper shell plate, sintering, fixing the capillary wick B on the upper shell plate, then respectively placing a sintered wick A and a lower shell plate in an upper die and a lower die of a sintering fixing die, locking and fixing to obtain the sintering fixing die, placing the sintering fixing die in a vacuum atmosphere or a reducing atmosphere, sintering at the temperature of 750-.
Preferably, the antioxidant treatment is to soak the mixture in an antioxidant for 90 to 180 seconds to generate an antioxidant film on the surface.
Advantageous effects
The capillary wick adopted by the VC heat dissipation device at the present stage is mainly sintered metal, woven by a wire mesh and processed into a micro-channel wick. The liquid absorption core mainly adopts copper, aluminum and iron. The metal material liquid absorption core has low intrinsic heat conductivity, generates larger thermal resistance in the heat transfer process of the VC radiator, and restricts the improvement of the heat dissipation performance of the VC. The copper/diamond sintered body with the three-dimensional porous structure is prepared for the first time and is applied to the VC device as the capillary wick, and due to the extremely high intrinsic thermal conductivity (1800-2000w/mk) of diamond particles, compared with the traditional sintered copper powder capillary wick, the copper/diamond sintered body wick with the three-dimensional porous structure has smaller overall thermal resistance, and is beneficial to improving the overall heat transfer performance of the VC device. Meanwhile, the problem of interface peeling of the copper-plated diamond particles during sintering is solved by plating the metal modified layer, the sintering combination condition between the diamond particles and copper powder is improved by sequentially plating the metal transition layer and the copper cladding layer, and the technological processes of the particle size of the diamond particles and the copper powder, the powder loading mode, the sintering procedure and the like are effectively controlled, so that the porous copper/diamond sintered body with certain mechanical strength, reasonable pore diameter and porosity is obtained. Provides a new solution for the application of the high-thermal-conductivity carbon material and the composite material thereof in the field of phase change heat transfer devices.
Drawings
FIG. 1 is a schematic view of the machining of the upper surface of the lower shell plate of the present invention.
FIG. 2 is a schematic view of the lower shell plate of the present invention as a finished product.
Detailed Description
Example 1
Preparation of capillary wick a:
taking diamond particles with the particle size of 150 mu m (100 meshes) to deposit a Cr transition layer, obtaining diamond particles with the thickness of 2 mu m and containing the Cr transition layer by magnetron sputtering power of 200w for 20min, and then plating copper on the surfaces of the diamond particles containing the Cr overplate layer, wherein the specific copper plating process comprises the following steps: obtaining a copper cladding layer with the thickness of 2 mu m by magnetron sputtering with the power of 200w, and then mixing diamond particles of the copper cladding layer with copper powder with the particle size of 150 mu m according to the mass ratio of 40: 60 to obtain mixed powder, loosely loading the mixed powder into a graphite die, sintering the mixed powder in a hydrogen atmosphere, heating the mixed powder to 750 ℃ at the speed of 5 ℃/min, then heating the mixed powder to 900 ℃ at the speed of 3.3 ℃/h, keeping the temperature for 60min, and then air-cooling the mixed powder to obtain a copper/diamond sintered body with the porosity of 56 percent, namely the capillary wick A.
Preparing a VC radiator:
processing to obtain an upper shell plate with the size of 140X100X1mm, processing to obtain a lower shell plate with the external size of 140X100X5mm, processing a cavity on the lower shell plate with the size of 40X60X2mm, processing cylindrical support columns on the surfaces of the lower shell plate and the cavity, wherein the support columns are uniformly distributed, and the size of the support columns on the surface of the lower shell plate is 140X100X1mm
The size of the supporting column on the surface of the concave cavity is
The upper surface of the support column is ensured to be flush with the lower shell plate. The method comprises the steps of taking a copper wire mesh woven structure as a capillary wick B, placing the capillary wick B in an upper shell plate, sintering, fixing the capillary wick B on the upper shell plate, then respectively placing a sintered wick A and a lower shell plate in an upper die and a lower die of a sintering fixing die, locking and fixing to obtain the sintering fixing die, placing the sintering fixing die in an Ar atmosphere to sinter at 850 ℃, fixing a capillary wick a on the lower shell plate, matching the upper shell plate and the lower shell plate, sealing the edges, welding and forming to obtain a heat dissipation plate, then welding a liquid filling pipe, injecting working medium liquid to enable the working medium liquid to occupy 40% of the volume of a cavity, sealing the liquid filling pipe by adopting an argon arc welding method to obtain the heat dissipation plate with the welded seal, and finally machining and carrying out anti-oxidation treatment on the heat dissipation plate to obtain the VC heat dissipation device. The antioxidant treatment is to soak the mixture in an antioxidant for 90 seconds to generate an antioxidant film on the surface. The antioxidant is a copper discoloration-preventing passivator purchased from Olympic technologies, Inc. of Wenzhou. Under a 400W heating power test, the VC radiator has the maximum temperature difference of only 9.8 ℃, the equivalent thermal resistance of 0.081 ℃/W and excellent temperature equalization performance and heat transfer performance.
Example 2
Preparation of capillary wick a:
taking diamond particles with the particle size of 250 mu m (60 meshes) to deposit a Cr transition layer, carrying out magnetron sputtering with the power of 200W for 90min to obtain diamond particles with the thickness of 9 mu m and containing the Cr transition layer, and then plating copper on the surfaces of the diamond particles containing the Cr overplate layer, wherein the specific copper plating process comprises the following steps: magnetron sputtering power of 200W, deposition time of 90min to obtain a copper cladding layer with the thickness of 9 μm, and then mixing diamond particles of the copper cladding layer with copper powder with the particle size of 150 μm according to a mass ratio of 50: 50, obtaining mixed powder, loosely loading the mixed powder into a graphite die, sintering the mixed powder in a hydrogen atmosphere, heating the mixed powder to 750 ℃ at the speed of 300 ℃/h (5 ℃/min), then heating the mixed powder to 850 ℃ at the speed of 200 ℃/h (3.3 ℃/min), keeping the temperature for 90min, and then air-cooling the mixture to obtain a copper/diamond sintered body with the porosity of 60%, namely the capillary wick A.
Preparing a VC radiator:
processing to obtain an upper shell plate with the size of 140X100X1mm, processing to obtain a lower shell plate with the external size of 140X100X5mm, processing a cavity on the lower shell plate with the size of 40X60X2mm, processing cylindrical support columns on the surfaces of the lower shell plate and the cavity, wherein the support columns are uniformly distributed, and the size of the support columns on the surface of the lower shell plate is 140X100X1mm
The size of the supporting column on the surface of the concave cavity is
The upper surface of the support column is ensured to be flush with the lower shell plate. Placing a capillary wick B in an upper shell plate by taking sintered copper powder as the capillary wick B, sintering, fixing the capillary wick B on the upper shell plate, then respectively placing the sintered wick A and a lower shell plate in an upper die and a lower die of a sintering fixing die, locking and fixing to obtain a sintering fixing die, placing the sintering fixing die in an Ar atmosphere to sinter at 850 ℃, fixing the capillary wick A on the lower shell plate, matching the upper shell plate and the lower shell plate, sealing the edges, welding and forming to obtain a heat dissipation plate, then welding a liquid charging pipe, injecting working medium liquid to ensure that the working medium liquid occupies 35% of the cavity volume, sealing the liquid charging pipe by adopting an argon arc welding method to obtain a liquid charging pipe, and finally sealing the liquid charging pipe by adopting an argon arc welding method to obtain the working medium liquidAnd finally, machining the heat dissipation plate and carrying out anti-oxidation treatment to obtain the VC radiator. The antioxidant treatment is to soak the mixture in an antioxidant for 90 seconds to generate an antioxidant film on the surface. The antioxidant is a copper discoloration-preventing passivator purchased from Olympic technologies, Inc. of Wenzhou. Under a 400W heating power test, the VC radiator has the maximum temperature difference of only 12.1 ℃, the equivalent thermal resistance of 0.075 ℃/W and excellent temperature-equalizing performance and heat transfer performance.
Comparative example 1
Comparative example 1 other preparation conditions were the same as in example 1, except that the sintering temperature in the first stage of comparative example 1 was 600 ℃ and the sintering temperature in the second stage was 750 ℃. The porous sintered body prepared under such conditions is difficult to form a stable sintered neck due to an excessively low sintering temperature, and the bonding between powders is poor, failing to obtain a capillary wick having a certain mechanical strength and stably existing.
Comparative example 2
Comparative example 2 the other preparation conditions were the same as in example 1 except that the temperature increase rate in the first stage of comparative example 2 was 16 ℃/min and the temperature increase rate in the second stage was 6 ℃/min. The porous sintered body prepared under such conditions is partially cracked, and has insufficient bonding properties, and a capillary wick having a certain mechanical strength and stably existing cannot be obtained.
Comparative example 3
Comparative example 3 the other preparation conditions were the same as in example 2 except that in comparative example 3, the grain size of the copper-plated diamond was 75 μm and the grain size of the copper powder was 30 μm. The porosity of the porous sintered body prepared under this condition was only 36%. After the heat-insulating material is fixed on a VC radiator, under the heating power of 400W, the maximum temperature difference of the VC radiator is 13.3 ℃, the equivalent thermal resistance is 0.096 ℃/W, and the temperature-equalizing performance and the heat-transfer performance are poor.
Comparative example 4
Comparative example 4 the other conditions were the same as in example 2, except that comparative example 4 did not employ magnetron sputtering to deposit the Cr transition layer. When the porous sintered body is prepared under the condition, the copper cladding layer on the surface of the diamond particles is separated, and the stable capillary wick with certain mechanical strength cannot be formed.
Claims (10)
1. The utility model provides a VC radiator of built-in copper diamond sintering wick which characterized in that: the VC radiator comprises an upper shell plate and a lower shell plate, wherein a cavity is formed between the upper shell plate and the lower shell plate, a capillary liquid absorption core B is installed in the upper shell plate, a capillary liquid absorption core A is installed in the lower shell plate, the capillary liquid absorption core A is a copper/diamond sintered body with a three-dimensional porous structure, the mass fraction of diamond in the copper/diamond sintered body is 10-90%, and the porosity of the copper/diamond sintered body is 40-80%.
2. A VC heat sink with a copper/diamond sintered wick built-in according to claim 1, wherein: the porosity of the copper/diamond sintered body is 50 to 75%.
3. A VC heat sink with a copper/diamond sintered wick built-in according to claim 1, wherein: the preparation process of the copper/diamond sintered body comprises the following steps: and depositing a transition layer on the diamond particles, plating copper on the surface of the diamond particles containing the plating layer to obtain diamond particles containing copper coating layers, mixing the diamond particles containing the copper coating layers with copper powder to obtain mixed powder, loosely loading the mixed powder in a graphite mould, and sintering to obtain the copper/diamond sintered body.
4. A VC heat sink with a copper/diamond sintered wick built-in according to claim 3 wherein: the transition layer is made of one or more of nickel, niobium, tantalum, titanium, cobalt, tungsten, molybdenum and chromium, and has a thickness of 0.5-30 μm.
5. A VC heat sink with a copper/diamond sintered wick built-in according to claim 3 wherein: the thickness of the copper cladding layer is 2-30 μm.
6. A VC heat sink with a copper/diamond sintered wick built-in according to claim 3 wherein: the particle size of the copper powder is 40-150 mu m, and the particle size of the diamond particles is 75-500 mu m.
7. A VC heat sink with a copper/diamond sintered wick built-in according to claim 3 wherein: the sintering is carried out in a vacuum atmosphere or a reducing atmosphere, the sintering temperature is 700-1000 ℃, and the sintering time is 30-90 min.
8. A VC heat sink with a copper/diamond sintered wick built-in according to claim 7, wherein: the temperature rise process of the sintering is as follows: the temperature is raised to 750 ℃ at the speed of 4-12 ℃/min, then raised to 950 ℃ at the speed of 800 ℃ at the speed of 1-5 ℃/min, and the temperature is maintained for 30-90 min.
9. A VC heat sink with a copper/diamond sintered wick built-in according to claim 1, wherein: the capillary liquid absorption cores A are uniformly distributed in a channel formed between any two supporting columns and in the concave cavity;
the capillary wick B is one or more selected from wire mesh metal, a metal powder sintered body, a metal fiber sintered body and foam metal;
the cavity contains working medium liquid.
10. A method of making a VC heat sink with a copper/diamond sintered wick built-in according to any of claims 1 to 9, wherein: the method comprises the following steps: placing a capillary wick B in an upper shell plate, sintering, fixing the capillary wick B on the upper shell plate, then respectively placing a sintered wick A and a lower shell plate in an upper die and a lower die of a sintering fixing die, locking and fixing to obtain the sintering fixing die, placing the sintering fixing die in a vacuum atmosphere or a reducing atmosphere, sintering at the temperature of 750-.
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| CN117512384A (en) * | 2023-10-31 | 2024-02-06 | 北京市计量检测科学研究院 | Diamond/copper composite material and arc forming method thereof |
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| CN112944965A (en) * | 2021-02-20 | 2021-06-11 | 广东工业大学 | High-thermal-conductivity soaking plate and preparation method thereof |
| CN113115576A (en) * | 2021-04-20 | 2021-07-13 | 苏州康丽达精密电子有限公司 | Ultrathin soaking plate and manufacturing method thereof |
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| CN115625484A (en) * | 2022-10-14 | 2023-01-20 | 广东畅能达科技发展有限公司 | Bent special-shaped ultrathin soaking plate and manufacturing process and application thereof |
| CN115625484B (en) * | 2022-10-14 | 2023-09-01 | 广东畅能达科技发展有限公司 | Bending special-shaped ultrathin soaking plate and manufacturing process and application thereof |
| CN117512384A (en) * | 2023-10-31 | 2024-02-06 | 北京市计量检测科学研究院 | Diamond/copper composite material and arc forming method thereof |
| CN117512384B (en) * | 2023-10-31 | 2024-05-14 | 北京市计量检测科学研究院 | Diamond/copper composite material and arc forming method thereof |
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