CN113745406B - Pixel structure, preparation method thereof and display panel - Google Patents

Pixel structure, preparation method thereof and display panel Download PDF

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Publication number
CN113745406B
CN113745406B CN202111299019.7A CN202111299019A CN113745406B CN 113745406 B CN113745406 B CN 113745406B CN 202111299019 A CN202111299019 A CN 202111299019A CN 113745406 B CN113745406 B CN 113745406B
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layer
luminescent material
cavity
thickness
width
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CN113745406A (en
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王杰
许益祯
江枫
张建英
袁海江
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HKC Co Ltd
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HKC Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The pixel structure comprises a substrate, an insulating layer, an anode layer and a hole transport layer, wherein the anode layer and the hole transport layer are arranged on the insulating layer; the first light-emitting material cavity and the second light-emitting material cavity are communicated through a communicating channel and are arranged adjacently, the anode layer, the hole transport layer and the first light-emitting material cavity are sequentially stacked, a first light-emitting material layer is formed in the first light-emitting material cavity, and a second light-emitting material layer is formed in the second light-emitting material cavity. The thicknesses of the first luminescent material layers in the luminescent material cavities with different pixel structures are the same, so that the brightness of all OLED devices in the manufactured OLED display screen keeps uniform, and meanwhile, luminescent raw materials are saved.

Description

Pixel structure, preparation method thereof and display panel
Technical Field
The application belongs to the technical field of display, and relates to a pixel structure, a preparation method thereof and a display panel.
Background
Compared with a common display screen, an Organic Light-Emitting Diode (OLED) display screen is thinner and thinner, has high brightness, low power consumption, fast response, high definition, good flexibility and high luminous efficiency, and can meet new requirements of consumers on display technologies. More and more display manufacturers worldwide are invested in research and development and are listed as the next generation display technology with great development prospect.
The film forming mode of each functional layer of the OLED mainly comprises an evaporation mode and a solution mode, and due to the defects of low material utilization rate, poor uniformity and the like in the evaporation method, the large-size OLED device cannot be prepared; therefore, OLED devices are generally prepared using a solution process.
In the prior art, Ink-Jet Printing (IJP) is mainly used in a solution method, and the microcavity effect has a large effect on the OLED device, and a phenomenon of uneven film thickness of a light-emitting material layer occurs, so that uneven luminance of light emission of the OLED device is caused, and the use effect of the OLED device is seriously affected.
Disclosure of Invention
In view of this, embodiments of the present application provide a pixel structure, a method for manufacturing the pixel structure, and a display panel, so as to solve the technical problem of uneven thickness of a light emitting material in OLED inkjet printing.
A first aspect of an embodiment of the present application provides a method for manufacturing a pixel structure, where the method includes: depositing a luminescent material definition layer on a substrate;
etching a first luminescent material cavity and a second luminescent material cavity in the luminescent material defining layer, wherein the first luminescent material cavity is communicated with the second luminescent material cavity through a communicating channel;
spraying luminescent materials into the first luminescent material cavity to form a first luminescent material layer;
detecting whether the luminescent material in the first luminescent material cavity overflows into the second luminescent material cavity through the communication channel to form a second luminescent material layer;
and when a second luminescent material layer is formed in the second luminescent material cavity, stopping spraying the luminescent material into the first luminescent material cavity.
In one embodiment, the communicating channel has a first size, and the spraying of the luminescent material into the first luminescent material cavity to form a first luminescent material layer comprises:
spraying red luminescent material into the first luminescent material cavity at a first speed to form a first luminescent material layer with a first thickness;
or, the communicating channel has a second size, and the spraying of the luminescent material into the first luminescent material cavity to form a first luminescent material layer includes:
spraying green luminescent materials into the first luminescent material cavity at a second speed to form a first luminescent material layer with a second thickness;
or, the communicating channel has a third size, and the spraying of the luminescent material into the first luminescent material cavity to form a first luminescent material layer includes:
spraying blue luminescent material into the first luminescent material cavity at a third speed to form a first luminescent material layer with a third thickness;
wherein a size relationship among the first size, the second size, and the third size is: the third dimension > the first dimension > the second dimension;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
In one embodiment, the first thickness, the second thickness and the third thickness are all in the size range of 0.5nm to 200 nm.
In one embodiment, after stopping spraying the luminescent material into the first luminescent material cavity, the method includes:
depositing an electron transport defining layer of an insulating layer on the luminescent material defining layer, the first luminescent material layer and the second luminescent material layer;
etching an electron transmission cavity in the electron transmission defining layer, so that the surface of the first luminescent material layer close to the electron transmission defining layer is exposed in the electron transmission cavity;
depositing an electron transport layer in the electron transport cavity;
depositing a cathode defining layer of an insulating layer on the electron transport defining layer and the electron transport layer;
etching a cathode cavity in the cathode defining layer so that a surface of the electron transport layer adjacent to the cathode defining layer is exposed in the cathode cavity;
depositing a cathode layer in the cathode cavity;
and depositing an encapsulation layer on the cathode defining layer and the cathode layer.
A second aspect of the embodiments of the present application provides a pixel structure, including a substrate, an insulating layer, and an anode layer and a hole transport layer disposed on the insulating layer, where the pixel structure includes a first light emitting material cavity and a second light emitting material cavity both disposed on the insulating layer;
the first light-emitting material cavity and the second light-emitting material cavity are communicated through a communicating channel and are arranged adjacently, the anode layer, the hole transport layer and the first light-emitting material cavity are sequentially stacked, a first light-emitting material layer is formed in the first light-emitting material cavity, and a second light-emitting material layer is formed in the second light-emitting material cavity.
In one embodiment, the pixel structure further includes a circuit substrate, an electron transport layer, and a cathode layer, and the substrate, the circuit substrate, the anode layer, the hole transport layer, the first light emitting material layer, the electron transport layer, and the cathode layer are sequentially stacked.
In one embodiment, the insulating layer includes a circuit substrate defining layer, an anode defining layer, a hole transport defining layer, a light emitting material defining layer, an electron transport defining layer, and a cathode defining layer, which are sequentially stacked.
In one embodiment, the circuit substrate is accommodated in the circuit substrate definition layer, the anode layer is accommodated in the anode definition layer, the hole transport layer is accommodated in the hole transport definition layer, the first luminescent material layer is accommodated in the luminescent material definition layer, the electron transport layer is accommodated in the electron transport definition layer, and the cathode layer is accommodated in the cathode definition layer.
In one embodiment, the communication channel has a first size, and the first luminescent material layer is a red luminescent material layer of a first thickness;
or the communication channel has a second size, and the first luminescent material layer is a green luminescent material layer with a second thickness;
or the communication channel has a third size, and the first luminescent material layer is a blue luminescent material layer with a third thickness;
wherein a size relationship among the first size, the second size, and the third size is: the third dimension > the first dimension > the second dimension;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
In one embodiment, the first thickness, the second thickness and the third thickness are all in the size range of 0.5nm to 200 nm.
A third aspect of embodiments of the present application provides a display panel including a plurality of pixel structures arranged in an array form formed on a substrate;
wherein at least one of the plurality of pixel structures is the pixel structure.
In one embodiment, the second light emitting material cavity is disposed in a redundant pixel region of the display panel.
In the first aspect of the embodiment of the present application, a first luminescent material layer is formed by spraying a luminescent material into a first cavity structure; detecting whether the luminescent material in the first cavity structure overflows into the second cavity structure through the communication channel to form a second luminescent material layer; when the second cavity structure forms the second luminescent material layer, the luminescent material spraying to the first cavity structure is stopped, and the preparation process enables the thicknesses of the first luminescent material layers in the first cavity structures with different pixel structures to be the same, so that the brightness of all OLED devices in the OLED display screen prepared based on the production process keeps uniform, and meanwhile, the luminescent raw materials are saved.
It is understood that, the beneficial effects of the second aspect and the third aspect can be referred to the related description of the first aspect, and are not described herein again.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a flow chart of a preparation method provided in an embodiment of the present application;
FIG. 2 is a second flowchart of a manufacturing method according to a first embodiment of the present disclosure;
FIG. 3 is a third flowchart of a manufacturing method according to an embodiment of the present disclosure;
FIG. 4 is a fourth flowchart of a manufacturing method provided in an embodiment of the present application;
fig. 5 is a first cross-sectional view of a pixel structure according to a second embodiment of the present application;
fig. 6 is a second cross-sectional view of a pixel structure according to a second embodiment of the present application;
fig. 7 is a schematic top view structure of a fourth cavity structure and a fifth cavity structure of a luminescent material defining layer provided in the second embodiment of the present application;
fig. 8 is a first cross-sectional view of a luminescent material defining layer according to a second embodiment of the present application;
fig. 9 is a second cross-sectional view of a luminescent material defining layer provided in the second embodiment of the present application;
fig. 10 is a third cross-sectional view of a luminescent material defining layer provided in the second embodiment of the present application;
fig. 11 is a fourth cross-sectional view of a luminescent material defining layer provided in the second embodiment of the present application;
fig. 12 is a fifth cross-sectional view of a luminescent material defining layer provided in the second embodiment of the present application;
fig. 13 is a sixth cross-sectional view of a luminescent material defining layer according to the second embodiment of the present application;
fig. 14 is a third cross-sectional view of a pixel structure provided in the second embodiment of the present application;
fig. 15 is a first partial cross-sectional view of a pixel structure according to a second embodiment of the present application;
fig. 16 is a fourth cross-sectional view of a pixel structure provided in the second embodiment of the present application;
fig. 17 is a second partial cross-sectional view of a pixel structure provided in the second embodiment of the present application;
fig. 18 is a fifth cross-sectional view of a pixel structure provided in the second embodiment of the present application;
wherein: 1. an insulating layer; 11. a first luminescent material cavity; 12. a second luminescent material cavity; 13. a communication channel; 2. a circuit substrate; 3. an anode layer; 4. a hole transport layer; 5. a first luminescent material layer; 6. a second light emitting material layer; 7. an electron transport layer; 8. a cathode layer; 9. a packaging layer; 10. a substrate; 101. a circuit substrate defining layer; 102. an anode defining layer; 103. a hole transport defining layer; 104. a luminescent material defining layer; 105. an electron transport defining layer; 106. the cathode defines a layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Example one
Referring to fig. 1, an embodiment of the present application provides a method for manufacturing a pixel structure, including the following steps:
s11, depositing a luminescent material definition layer 104 on the substrate 10;
s12, etching a first luminescent material cavity 11 and a second luminescent material cavity 12 in the luminescent material defining layer 104, wherein the first luminescent material cavity 11 is communicated with the second luminescent material cavity 12;
s13, spraying luminescent materials into the first luminescent material cavity 11 to form a first luminescent material layer 5;
s14, detecting whether the luminescent material in the first luminescent material cavity 11 overflows into the second luminescent material cavity 12 via the communication channel 13 to form a second luminescent material layer 6;
s15, when the second luminescent material layer 6 is formed in the second luminescent material cavity 12, the luminescent material is stopped being sprayed into the first luminescent material cavity 11.
In application, the substrate 10 is a base for production and preparation and is used for supporting raw materials, the substrate 10 can be made of hard materials similar to glass or flexible materials similar to PET and the like, and materials can be flexibly selected according to actual production requirements; the insulating layer 1 plays the role of insulation and encapsulation, and the requirements for the insulating layer 1 are as follows: has larger quality factor >3 mu C/cm, small loss, higher dielectric constant, high breakdown field strength, flat surface without pinholes, no defects and good adhesion. The insulating materials developed and researched so far are mostly limited to binary single-layer or multi-layer dielectric materials, such as Y2O3, SiO2, Ta2O5, A12O3, HfO2, Si3N4, SrTiO3, BST and the like, and generally the dielectric constant of the materials is 3.9-180, the band gap width is 3.5-8.9, and the breakdown field strength is not more than 10MV/cm at most. In the present application, the insulating layer 1 is preferably prepared by means of deposition. The light-emitting material in the present application is preferably an organic electroluminescent material having the following characteristics: 1, the organic material has good machining performance, so that a film can be formed on any substrate; 2, many organic luminophors have higher fluorescence quantum efficiency, especially in a blue light region, the fluorescence efficiency of some organic matters almost reaches 100 percent; 3 the chemical structure of the organic matter can be adjusted according to the requirements of designers, and the organic matter has diversity and plasticity; the additive luminescent material is preferably prepared by means of inkjet printing in the present application; the organic small molecule luminescent materials can be divided into two classes of compounds and metal chelates. Organic small molecule compounds are various in kind, and their structures often have conjugated heterocycles and various chromophores. Such as oxadiazole derivatives, arylamine derivatives, onion derivatives, and 1, 3-butadiene derivatives, etc. By adjusting the chemical structure of the small molecule compound, the light-emitting wavelength of the material can be changed.
In application, the Deposition method includes, but is not limited to, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), or Atomic Layer Deposition (ALD). Etching methods include, but are not limited to, photolithography, X-ray etching, electron beam etching, and ion beam etching; when photolithography is used, a photoresist layer is coated on the surface of the luminescent material defining layer 104, and then the photoresist layer is selectively exposed through a mask corresponding to the shapes of the first luminescent material cavity 11 and the second luminescent material cavity 12, because the exposed part and the unexposed part of the photoresist layer are different in dissolving speed in a developing solution, a pattern corresponding to the shapes of the first luminescent material cavity 11 and the second luminescent material cavity 12 is left on the surface of the luminescent material defining layer 104 after development, and thus the first luminescent material cavity 11 and the second luminescent material cavity 12 are obtained by etching.
In application, the preparation method corresponding to fig. 1 enables the brightness of the OLED device realized based on the preparation method to maintain uniformity, and saves the luminescent material, and the specific realization principle is as follows:
because the luminescent material cavity is communicated with the electron transmission cavity, when the OLED device is prepared by the preparation method, luminescent material is sprayed into the luminescent material cavity, when the luminescent material in the luminescent material cavity is sprayed to form a first luminescent material layer, the luminescent material is continuously sprayed into the luminescent material cavity, so that the luminescent material in the luminescent material cavity can overflow into the electron transmission cavity through a communication position between the luminescent material cavity and the electron transmission cavity to form a second luminescent material layer, at the moment, the luminescent material is stopped being sprayed into the luminescent material cavity, the thickness of the first luminescent material layer in the cavity structure of the circuit substrate is the same, when different OLED devices are prepared based on the preparation method, the brightness of all OLED devices can be kept uniform, because the luminescent material is stopped being sprayed into the luminescent material cavity when the second luminescent material layer is detected to be formed in the electron transmission cavity, the material waste caused by continuously spraying the luminescent material into the luminescent material cavity is avoided, so that the luminescent material is saved.
In an embodiment, the communication channel 13 having a first size, spraying luminescent material into the first luminescent material cavity 11 to form the first luminescent material layer 5, comprises:
spraying red luminescent material into the first luminescent material cavity 11 at a first speed to form a first luminescent material layer 5 with a first thickness;
alternatively, the communicating channel 13 having the second size, spraying the luminescent material into the first luminescent material cavity 11 to form the first luminescent material layer 5, includes:
spraying green luminescent material into the first luminescent material cavity 11 at a second speed to form a first luminescent material layer 5 with a second thickness;
alternatively, the communicating channel 13 has a third size, and the luminescent material is sprayed into the first luminescent material cavity 11 to form the first luminescent material layer 5, including:
spraying blue luminescent material into the first luminescent material cavity 11 at a third speed to form a first luminescent material layer 5 with a third thickness;
wherein, the size relation among the first size, the second size and the third size is as follows: third dimension > first dimension > second dimension;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
In application, the first dimension, the second dimension, and the third dimension all refer to the width of the communication channel 13.
In one embodiment, the first thickness, the second thickness and the third thickness are all in the range of 0.5nm to 200 nm.
Referring to fig. 2, in an embodiment, before step S11, the method includes the following steps:
s21, depositing an anode defining layer 102 of an insulating layer 1 on the substrate 10;
s22, etching an anode cavity in the anode defining layer 102;
s23, depositing an anode layer 3 in the anode cavity;
s24, depositing a hole transport defining layer 103 of the insulating layer 1 on the anode defining layer 102 and the anode layer 3;
s25, etching a hole transport cavity in the hole transport defining layer 103, so that the surface of the anode layer 3 close to the hole transport defining layer 103 is exposed in the hole transport cavity;
s26, depositing a hole transport layer 4 in the hole transport cavity.
In application, the anode layer 3 is used as an anode of an OLED device, and the anode layer 3 may be an aluminum metal layer, a copper metal layer, or a silver metal layer implemented by a metal material such as aluminum, copper, or silver, or may be an ITO transparent conductive layer, an IZO transparent conductive layer implemented by a transparent conductive material such as Indium Tin Oxide, ITO, Indium Zinc Oxide, IZO, or the like. It is to be understood that the anode layer may include, but is not limited to, a single layer based on one of the above materials, or a multi-layer structure or a composite structure based on a plurality of the above materials.
Referring to fig. 3, in an embodiment, before step S21, the method includes the following steps:
s31, depositing a circuit substrate definition layer 101 of an insulating layer 1 on the substrate 10;
s32, etching a circuit substrate cavity in the circuit substrate definition layer 101, so that the surface of the substrate 10 close to the circuit substrate definition layer 101 is exposed in the circuit substrate cavity;
s33, depositing the circuit substrate 2 in the circuit substrate cavity.
Referring to fig. 4, in one embodiment, after stopping spraying the luminescent material into the first luminescent material cavity 11, the method includes the following steps:
s41, depositing an electron transport defining layer 105 of the insulating layer 1 on the luminescent material defining layer 104, the first luminescent material layer 5, and the second luminescent material layer 6;
s42, etching an electron transport cavity in the electron transport defining layer 105, so that the surface of the first luminescent material layer 11 close to the electron transport defining layer 105 is exposed in the electron transport cavity;
s43, depositing an electron transport layer 7 in the electron transport cavity;
s44, depositing a cathode defining layer 106 of the insulating layer 1 on the electron transport defining layer 105 and the electron transport layer 7;
s45, etching a cathode cavity in the cathode defining layer 106, so that the surface of the electron transport layer 7 close to the cathode defining layer 106 is exposed in the cathode cavity;
s46, depositing a cathode layer 8 in the cathode cavity;
s47, depositing an encapsulation layer 9 on the cathode defining layer 106 and the cathode layer 8.
In application, the preparation method corresponding to fig. 4 enables the performance of the OLED device to be better, and is beneficial to mass production.
In the application, the material of the cathode layer 8 may be a metal material such as aluminum, copper, silver, or the like, or a transparent conductive material such as Indium Tin Oxide, ITO, Indium Zinc Oxide, IZO, or the like, but is not limited to these materials, and the cathode layer 8 may be a single-layer film structure or a multi-layer film stack structure.
In application, the material of the encapsulation layer 9 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, oxides formed from ethyl silicate TEOS, phosphosilicate glass PSG, borophosphosilicate glass BPSG, low-K dielectric materials having a dielectric constant K of less than 3.9, organic insulating materials such as acrylic resins, epoxy resins, phenolic resins, polyamide resins, polyimide resins, etc., other suitable dielectric materials, or combinations thereof. Illustratively, the low-K dielectric material includes fluorosilicate glass FSG, carbon-doped silicon oxide, polyimide, and the like, and combinations thereof.
Example two
Referring to fig. 5 to 7, a pixel structure includes a luminescent material defining layer 104 and at least one pixel light emitting unit disposed on the luminescent material defining layer 104, where the pixel light emitting unit includes a first luminescent material cavity 11 and a second luminescent material cavity 12, and a cavity of the first luminescent material cavity 11 is communicated with a cavity of the second luminescent material cavity 12.
In application, a luminescent material is sprayed into the first luminescent material cavity 11 in an ink-jet printing mode, the luminescent material is preferably an organic photoluminescent material, and whether the second luminescent material cavity 12 contains the luminescent material is detected; in application, when the light-emitting material in the first light-emitting material cavity 11 overflows into the second light-emitting material cavity 12 and the detection mechanism detects the light-emitting material layer in the second light-emitting material cavity 12, the spraying of the light-emitting material into the first light-emitting material cavity 11 is stopped, the thicknesses of the light-emitting materials in the first light-emitting material cavities 11 in the OLED device are the same, and the uniformity of the brightness of the OLED device is kept in working.
Referring to fig. 8 and 11, in an embodiment, one side of the cavity of the second light emitting material cavity 12 is disposed obliquely and intersects with one side of the cavity of the first light emitting material cavity 11 to form a communicating structure, so that the cavity of the first light emitting material cavity 11 is communicated with the cavity of the second light emitting material cavity 12.
In application, one side of the cavity of the first luminescent material cavity 11 can be vertically arranged or obliquely arranged, and can be flexibly arranged according to the requirement of actual work, and is intersected with one side of the obliquely arranged cavity in the second luminescent material cavity 12 to form a communicating structure, so that the cavity of the first luminescent material cavity 11 is communicated with the cavity of the second luminescent material cavity 12, and the luminescent material in the first luminescent material cavity 11 can be favorably overflowed into the second luminescent material cavity 12.
Referring to fig. 9, 10, 12 and 13, in an embodiment, an opening or a through hole is disposed at one side of the second luminescent material cavity 12, and the cavity of the second luminescent material cavity 12 is communicated with the cavity of the first luminescent material cavity 11 through the opening or the through hole.
In application, the luminescent material in the first luminescent material cavity 11 overflows into the second luminescent material cavity 12 through the opening or through hole, and this structural design is beneficial to the overflow of the luminescent material in the first luminescent material cavity 11 into the second luminescent material cavity 12.
Referring to fig. 8 to 13, in an embodiment, the first light emitting material cavity 11 is a through hole structure.
In application, the two ends of the first luminescent material cavity 11 are connected with the surface of the insulating layer 1, and the structural design is favorable for accommodating the first luminescent material layer 5 in the cavity of the first luminescent material cavity 11 to normally work.
Referring to fig. 8 to 13, in an embodiment, the second light emitting material cavity 12 is a through hole or a groove.
In application, the second luminescent material cavity 12 is used for collecting luminescent material overflowing from the first luminescent material cavity 11, so the shape of the second luminescent material cavity 12 can be various, and the second luminescent material cavity 12 can be flexibly set according to the actual working requirement, as shown in fig. 8 to 10, and is a through hole; as shown in fig. 11 to 13, the second luminescent material cavity 12 is a groove.
In an embodiment, the shape and size of the second luminescent material cavity 12 is different from the first luminescent material cavity 11.
In application, the shape and size of the second luminescent material cavity 12 and the first luminescent material cavity 11 may be set to be the same or different, and may be flexibly set according to the actual working requirement.
Referring to fig. 2 to 8, in an embodiment, the insulating layer 1 includes a plurality of pixel defining units, each of the pixel defining units has a first light emitting material cavity 11 and a second light emitting material cavity 12, and the pixel defining units are of an insulating structure.
In application, the structure design is beneficial to emitting light with different colors according to the working requirements and meeting the requirements of different works.
Referring to fig. 14 to 18, in an embodiment, the pixel structure further includes: the pixel structure comprises an insulating layer 1, wherein the insulating layer 1 comprises a pixel structure and a plurality of definition layers, the definition layers are sequentially stacked, and the pixel structure is clamped in the middle of the definition layers; and a plurality of pixel units, all of which are embedded in the insulating layer 1. The specific structure of the pixel structure refers to the above embodiments, and since the pixel structure adopts all the technical solutions of all the above embodiments, all the beneficial effects brought by the technical solutions of the above embodiments are also achieved, and are not described in detail herein.
Among them, the material of the insulating layer 1 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, oxide formed of ethyl silicate TEOS, phosphosilicate glass PSG, borophosphosilicate glass BPSG, low-K dielectric material having a dielectric constant K of less than 3.9, organic insulating material such as acrylic resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, etc., other suitable dielectric material, or a combination thereof. Illustratively, the low-K dielectric material includes fluorosilicate glass FSG, carbon-doped silicon oxide, polyimide, and the like, and combinations thereof.
Referring to fig. 14, 16 and 18, in one embodiment, the insulating layer 1 includes a light emitting material defining layer 104, an anode defining layer 102, a hole transport defining layer 103, an electron transport defining layer 105, a cathode defining layer 106 and a circuit substrate defining layer 101, the pixel unit includes a circuit substrate 2, an anode layer 3, a hole transport layer 4, a first light emitting material layer 5 and a second light emitting material layer 6 embedded in the insulating layer 1, the circuit substrate 2, the anode layer 3, the hole transport layer 4 and the first light emitting material layer 5 are sequentially stacked from bottom to top, the light emitting material defining layer 104 has a first light emitting material cavity 11 and a second light emitting material cavity 12, the cavity of the first light emitting material cavity 11 is communicated with the cavity of the second light emitting material cavity 12, one side of the cavity of the second light emitting material cavity 12 is obliquely disposed and intersects with one side of the cavity of the first light emitting material cavity 11, an intersection is formed, so that the cavity of the first luminescent material cavity 11 is communicated with the cavity of the second luminescent material cavity 12, the bottom of the intersection is flush with the upper surface of the first luminescent material layer 5, and the second luminescent material layer 6 is accommodated in the second luminescent material cavity 12.
In one embodiment, the pixel cell further comprises an electron transport layer 7, the electron transport layer 7 being stacked on the first luminescent material layer 5 and the second luminescent material layer 6.
In application, the electron transport layer 7 is used for transporting electrons, and the electron transport layer 7 may be a single-layer structure or a multi-layer composite structure, and can be flexibly set according to the actual working requirements.
In one embodiment, the pixel cell further comprises a cathode layer 8, the cathode layer 8 being stacked on the electron transport layer 7.
In application, the cathode layer 8 can be of a single-layer structure or a multi-layer composite structure, can be flexibly arranged according to the actual working requirement, and is beneficial to the connection work of the OLED device and a circuit due to the structural design.
In one embodiment, the pixel cell further comprises an encapsulation layer 9, the encapsulation layer 9 being stacked on the cathode layer 8.
In application, the packaging layer 9 is arranged, so that interference of the external environment on the operation of the OLED device is avoided, and the stability of the operation of the OLED device is improved.
Referring to fig. 14 to 18, in one embodiment, in the contact surface between the circuit substrate 2 and the anode layer 3, the length of the circuit substrate 2 is greater than the length of the anode layer 3, and the width of the circuit substrate 2 is greater than the width of the anode layer 3.
In application, the structural design ensures that the electrical connection between the anode layer 3 and the circuit substrate 2 is kept good, which is beneficial to improving the working performance of the OLED device.
Referring to fig. 14 to 18, in an embodiment, the pixel unit further includes a substrate 10, and the insulating layer 1 is stacked on the substrate 10.
In use, the substrate 10 is provided to facilitate movement and mounting of the overall structure, which facilitates mass production.
In one embodiment, the communication channel 13 has a first size, the first luminescent material layer 5 is a red luminescent material layer of a first thickness;
alternatively, the communication channel 13 has a second size, and the first luminescent material layer 5 is a green luminescent material layer with a second thickness;
alternatively, the communication channel 13 has a third size, and the first luminescent material layer 5 is a blue luminescent material layer of a third thickness;
wherein, the size relation among the first size, the second size and the third size is as follows: third dimension > first dimension > second dimension;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
In one embodiment, the first thickness, the second thickness and the third thickness are all in the range of 0.5nm to 200 nm.
In use, the third dimension > the first dimension > the second dimension; the first thickness, the second thickness and the third thickness are all in the range of 0.5 nm-200 nm, so that the brightness of the pixel structure when emitting light with different colors is uniform.
EXAMPLE III
The present application further provides a display panel, including a pixel structure formed on a substrate 10, where at least one of a plurality of pixel structures is the above-mentioned pixel structure, and the specific structure of the pixel structure refers to the above-mentioned embodiment, and the thicknesses of the first luminescent material layers 5 in the plurality of first luminescent material cavities 11 in the plurality of pixel structures in the display panel are all the same, so that, in operation, the luminance of the plurality of pixel structures is kept uniform, and this embodiment not only saves luminescent materials, but also ensures the coating uniformity of luminescent materials, so that the luminance of the plurality of pixel structures in the display screen is uniform, and the color transition is natural.
In one embodiment, the second light emitting material cavity 12 is disposed in a redundant pixel region of the display panel.
In application, the first light emitting material cavity 11 is preferably disposed in a pixel region of the display panel, the first light emitting material cavity 11 is disposed in the pixel region of the display panel, and the second light emitting material cavity 12 is disposed in a redundant pixel region of the display panel, thereby avoiding interference to the working region.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features herein disclosed.

Claims (8)

1. A method of fabricating a pixel structure, the pixel structure comprising a substrate, the method comprising:
depositing a luminescent material defining layer (104) on a substrate (10);
etching a first luminescent material cavity (11) and a second luminescent material cavity (12) in the luminescent material defining layer (104), wherein the first luminescent material cavity (11) is communicated with the second luminescent material cavity (12) through a communicating channel (13);
spraying luminescent material into the first luminescent material cavity (11) to form a first luminescent material layer (5);
detecting whether the luminescent material in the first luminescent material cavity (11) overflows into the second luminescent material cavity (12) via the communication channel (13) forming a second luminescent material layer (6);
when the second luminescent material layer (6) is formed in the second luminescent material cavity (12), stopping spraying the luminescent material into the first luminescent material cavity (11);
depositing an electron transport defining layer (105) of insulating layer on the luminescent material defining layer (104), the first luminescent material layer (5) and the second luminescent material layer (6);
etching an electron transport cavity in the electron transport defining layer (105) such that a surface of the first luminescent material layer (5) adjacent to the electron transport defining layer (105) is exposed in the electron transport cavity;
depositing an electron transport layer (7) in the electron transport cavity;
depositing a cathode defining layer (106) of an insulating layer on the electron transport defining layer (105) and the electron transport layer (7);
etching a cathode cavity in the cathode defining layer (106) such that a surface of the electron transport layer (7) adjacent to the cathode defining layer (106) is exposed in the cathode cavity;
depositing a cathode layer (8) in the cathode cavity;
an encapsulation layer (9) is deposited on the cathode definition layer (106) and the cathode layer (8).
2. A method of manufacturing a pixel structure according to claim 1, wherein the communicating channel (13) has a first width, and the spraying of the luminescent material into the first luminescent material cavity (11) to form a first luminescent material layer (5) comprises:
spraying red luminescent material into the first luminescent material cavity (11) at a first rate to form a first luminescent material layer (5) of a first thickness;
or, the communication channel (13) has a second width, and the spraying of the luminescent material into the first luminescent material cavity (11) to form a first luminescent material layer (5) comprises:
spraying green luminescent material into the first luminescent material cavity (11) at a second rate to form a first luminescent material layer (5) of a second thickness;
or, the communication channel (13) has a third width, and the spraying of the luminescent material into the first luminescent material cavity (11) to form a first luminescent material layer (5) comprises:
spraying blue luminescent material into the first luminescent material cavity (11) at a third rate to form a first luminescent material layer (5) with a third thickness;
wherein a size relationship among the first width, the second width, and the third width is: the third width > the first width > the second width;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
3. The method of claim 2, wherein the first thickness, the second thickness, and the third thickness range from 0.5nm to 200 nm.
4. A pixel structure prepared based on the preparation method of any one of claims 1 to 3, comprising a substrate (10), an insulating layer (1), and an anode layer (3) and a hole transport layer (4) disposed in the insulating layer (1), characterized in that the pixel structure further comprises a first light emitting material cavity (11) and a second light emitting material cavity (12) opened in the insulating layer;
the first luminescent material cavity (11) and the second luminescent material cavity (12) are communicated and adjacently arranged through a communication channel (13), the anode layer (3), the hole transport layer (4) and the first luminescent material cavity (11) are sequentially stacked, a first luminescent material layer (5) is formed in the first luminescent material cavity (11), and a second luminescent material layer (6) is formed in the second luminescent material cavity (12);
the pixel structure further comprises a circuit substrate (2), an electron transmission layer (7), a cathode layer (8) and a packaging layer (9), wherein the substrate (10), the circuit substrate (2), the anode layer (3), the hole transmission layer (4), the first luminescent material layer (5), the electron transmission layer (7), the cathode layer (8) and the packaging layer (9) are sequentially stacked;
the insulating layer (1) comprises a circuit substrate definition layer (101), an anode definition layer (102), a hole transport definition layer (103), a luminescent material definition layer (104), an electron transport definition layer (105) and a cathode definition layer (106) which are sequentially stacked;
the circuit substrate (2) is accommodated in the circuit substrate definition layer (101), the anode layer (3) is accommodated in the anode definition layer (102), the hole transport layer (4) is accommodated in the hole transport definition layer (103), the first luminescent material layer (5) is accommodated in the luminescent material definition layer (104), the electron transport layer (7) is accommodated in the electron transport definition layer (105), and the cathode layer (8) is accommodated in the cathode definition layer (106).
5. A pixel structure according to claim 4, wherein the communication channel (13) has a first width, the first layer of luminescent material (5) being a layer of red luminescent material of a first thickness;
or the communication channel (13) has a second width, and the first luminescent material layer (5) is a green luminescent material layer with a second thickness;
or, the communication channel (13) has a third width, and the first luminescent material layer (5) is a blue luminescent material layer with a third thickness;
wherein a size relationship among the first width, the second width, and the third width is: the third width > the first width > the second width;
the size relation among the first thickness, the second thickness and the third thickness is as follows: the third thickness > the first thickness > the second thickness.
6. The pixel structure of claim 5, wherein the first thickness, the second thickness, and the third thickness range in size from 0.5nm to 200 nm.
7. A display panel comprising a plurality of pixel structures arranged in an array formed on a substrate (10);
wherein at least one of the plurality of pixel structures is a pixel structure according to any one of claims 4 to 6.
8. The display panel of claim 7, wherein the second luminescent material cavity (12) is disposed in a redundant pixel area of the display panel.
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