CN113744931A - Preparation method of patterned conductive film - Google Patents
Preparation method of patterned conductive film Download PDFInfo
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- CN113744931A CN113744931A CN202111045108.9A CN202111045108A CN113744931A CN 113744931 A CN113744931 A CN 113744931A CN 202111045108 A CN202111045108 A CN 202111045108A CN 113744931 A CN113744931 A CN 113744931A
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- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000006185 dispersion Substances 0.000 claims abstract description 18
- 238000001035 drying Methods 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000011259 mixed solution Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 239000004332 silver Substances 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 abstract description 23
- 239000002994 raw material Substances 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 15
- 239000000126 substance Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 239000012212 insulator Substances 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 239000002042 Silver nanowire Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0016—Apparatus or processes specially adapted for manufacturing conductors or cables for heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/003—Apparatus or processes specially adapted for manufacturing conductors or cables using irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P80/00—Climate change mitigation technologies for sector-wide applications
- Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention relates to the technical field of conducting films, in particular to a preparation method of a patterned conducting film, which comprises the steps of dispersing metal nanoparticles into water, alcohol or a mixed solution of the water and the alcohol according to the concentration of 0.01-50mg/ml, and shaking for 2-5 minutes to obtain a uniform dispersion liquid of the metal nanoparticles; printing the dispersion on a base material, and then drying at the temperature of 90-110 ℃ for 1-5 minutes; covering a mask plate with a specific pattern on the surface printed with the nano-particles, irradiating by infrared light, wherein the light energy density is 0.1-2j/cm2, and the irradiation time is 1-5 minutes; the invention greatly facilitates the application of the conductive film in subsequent products, improves the adhesive force of a plating layer, reduces environmental pollution, reduces the dependence of the rear end on equipment, greatly reduces the cost and reduces the waste of raw materials.
Description
Technical Field
The invention relates to the technical field of conductive films, in particular to a preparation method of a patterned conductive film.
Background
Photoelectric products all need light penetration and electric conduction, so that the transparent conductive film is the basis of the photoelectric products, and the photoelectric products such as flat panel displays, touch panels, solar cells, electronic paper, OLED (organic light emitting diode) lighting and the like need to use the transparent conductive film.
The current conductive films are various, and include traditional ITO (indium tin oxide) conductive films, as well as emerging silver nanowire conductive films, metal grid conductive films, organic conductive films, and the like. When the conductive film is applied to subsequent products, a series of complex processes such as cutting, aging, line printing, baking, etching, washing and the like are mostly needed, so that the conductive film has a specific pattern. Not only the process is complex and has high requirements on equipment, but also the raw materials are greatly wasted.
Conventional electroless plating refers to the formation of a dense metal film layer by reductive deposition of metal ions onto the surface of an insulator using a suitable reducing agent. In order to facilitate plating, improve adhesion and improve the surface of the insulator, processes such as roughening, sensitization, activation and copper plating are generally required. The corrosive liquid has great harm to the environment and the coating has poor adhesive force.
In order to solve the above problems, the present invention provides a method for preparing a patterned conductive film.
Disclosure of Invention
Technical problem to be solved
The method solves the problems that the traditional chemical plating is to utilize a proper reducing agent to reduce and deposit metal ions on the surface of an insulator to form a compact metal film layer, the surface of the insulator is easy to plate, the adhesion is improved, the processes of coarsening, sensitization, activation, copper plating and the like are generally needed to be carried out, the used corrosive liquid has great harm to the environment, the adhesion of a plating layer is poor, and when the conductive film is applied to subsequent products, a series of complex processes of cutting, aging, line printing, baking, etching, water washing and the like are needed to make the conductive film have a specific pattern, so that the process is complex, the requirement on equipment is high, and raw materials are greatly wasted.
(II) technical scheme
A method for preparing a patterned conductive film comprises the following steps:
the method comprises the following steps: dispersing metal nano particles into water, alcohol or a mixed solution of the water and the alcohol according to the concentration of 0.01-50mg/ml, and shaking for 2-5 minutes to obtain a uniform dispersion liquid of the metal nano particles;
step two: printing the dispersion on a base material, and then drying at the temperature of 90-110 ℃ for 1-5 minutes;
step three: covering a mask plate with a specific pattern on the surface printed with the nano-particles, irradiating by infrared light, wherein the light energy density is 0.1-2j/cm2, and the irradiation time is 1-5 minutes;
step four: and chemically plating and drying the substrate solidified with the metal nano particles, wherein the temperature of a plating solution is 40-60 ℃, the time of the plating solution is 2-30 minutes, the drying temperature is 80-150 ℃, and the drying time is 1-5 minutes, so that the conductive film with the specific pattern is obtained.
As a preferred technical scheme, the metal nanoparticles comprise gold, silver and copper.
The printing method preferably includes printing, spin coating, wire rod coating, and slit coating.
As a preferred technical scheme, the base material comprises PET, PC, PP and glass.
(III) advantageous effects
The invention has the beneficial effects that:
(1) by utilizing the surface plasma resonance effect of the nano particles and light and irradiating the nano particles by infrared light with certain energy, the nano particles are heated, the temperature of the nano particles can reach more than 150 ℃, the surface of a base material is effectively thermally ablated, the nano particles are embedded in the base material, the nano particles and the base material are tightly combined, the adhesive force of a coating is improved, and the use of chemicals harmful to the environment is avoided.
(2) Through the patterning process, the complex process of subsequent application is avoided, the application of the conductive film to subsequent products is facilitated, the dependence of the rear end on equipment is reduced, the cost is obviously reduced, and the waste of raw materials is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of a manufacturing process of the present invention;
Detailed Description
The method for preparing a patterned conductive film according to the present invention is further described with reference to the accompanying drawings, and the present invention is further described with reference to the following embodiments:
example 1
Dispersing the silver nanoparticles into water according to the concentration of 0.1mg/ml, and shaking for 3 minutes to obtain the silver nanoparticle uniform dispersion liquid.
Then, the silver nanoparticle dispersion was coated on one surface of PET, and dried at 100 ℃ for 3 minutes.
And covering the PET surface printed with the silver nano particles with a strip mask, wherein the line width is 3 microns, and the line spacing is 10 microns. The infrared light irradiation was carried out at a light energy density of 0.4j/cm2 for 3 minutes. Then the mask is removed, washed with water for 2 minutes, and then dried at 100 ℃ for 3 minutes to obtain the PET printed with the strip-shaped silver nanoparticles.
And (3) carrying out chemical plating on the PET, wherein the temperature of a plating solution is 50 ℃, the time of the plating solution is 10 minutes, and then drying for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The square resistance of the conductive film obtained by the four-probe test is 3 omega/□.
Example 2
Dispersing the silver nanoparticles into water according to the concentration of 0.2mg/ml, and shaking for 3 minutes to obtain the silver nanoparticle uniform dispersion liquid.
Then, the silver nanoparticle dispersion was coated on one surface of PET, and dried at 100 ℃ for 3 minutes.
And covering the PET surface printed with the silver nano particles with a strip mask, wherein the line width is 3 microns, and the line spacing is 10 microns. The infrared light irradiation was carried out at a light energy density of 0.4j/cm2 for 3 minutes. Then the mask is removed, washed with water for 2 minutes, and then dried at 100 ℃ for 3 minutes to obtain the PET printed with the strip-shaped silver nanoparticles.
And (3) carrying out chemical plating on the PET, wherein the temperature of a plating solution is 50 ℃, the time of the plating solution is 10 minutes, and then drying for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The square resistance of the conductive film obtained by the four-probe test is 2 omega/□.
Example 3
Dispersing the silver nanoparticles into water according to the concentration of 0.1mg/ml, and shaking for 3 minutes to obtain the silver nanoparticle uniform dispersion liquid.
Then, the silver nanoparticle dispersion was coated on one surface of PET, and dried at 100 ℃ for 3 minutes.
And covering the PET surface printed with the silver nano particles with a strip mask, wherein the line width is 3 microns, and the line spacing is 10 microns. The infrared light irradiation was carried out at a light energy density of 0.4j/cm2 for 3 minutes. Then the mask is removed, washed with water for 2 minutes, and then dried at 100 ℃ for 3 minutes to obtain the PET printed with the strip-shaped silver nanoparticles.
And (3) carrying out chemical plating on the PET, wherein the temperature of a plating solution is 40 ℃, the time of the plating solution is 10 minutes, and then drying for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The square resistance of the conductive film obtained by the four-probe test is 4 omega/□.
Example 4
Dispersing the silver nanoparticles into water according to the concentration of 0.1mg/ml, and shaking for 3 minutes to obtain the silver nanoparticle uniform dispersion liquid.
Then, the silver nanoparticle dispersion was coated on one surface of PET, and dried at 100 ℃ for 3 minutes.
And covering the PET surface printed with the silver nano particles with a strip mask, wherein the line width is 3 microns, and the line spacing is 10 microns. The infrared light irradiation was carried out at a light energy density of 0.8j/cm2 for 3 minutes. Then the mask is removed, washed with water for 2 minutes, and then dried at 100 ℃ for 3 minutes to obtain the PET printed with the strip-shaped silver nanoparticles.
And (3) carrying out chemical plating on the PET, wherein the temperature of a plating solution is 50 ℃, the time of the plating solution is 10 minutes, and then drying for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The sheet resistance of the conductive film obtained by the four-probe test was 2.5. omega./□.
Example 5
Dispersing the silver nanoparticles into water according to the concentration of 0.1mg/ml, and shaking for 3 minutes to obtain the silver nanoparticle uniform dispersion liquid.
Then, the silver nanoparticle dispersion was coated on one surface of glass, and dried at 100 ℃ for 3 minutes.
And covering the glass surface printed with the silver nanoparticles with a strip-shaped mask plate, wherein the line width is 3 micrometers, and the line spacing is 10 micrometers. The infrared light irradiation was carried out at a light energy density of 0.4j/cm2 for 3 minutes. And then removing the mask, washing with water for 2 minutes, and drying at 100 ℃ for 3 minutes to obtain the glass printed with the strip-shaped silver nanoparticles.
And chemically plating the glass, wherein the temperature of a plating solution is 50 ℃, the time of plating the solution is 10 minutes, and then drying the solution for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The square resistance of the conductive film obtained by the four-probe test is 3 omega/□.
Example 6
Dispersing the copper nanoparticles into water according to the concentration of 0.1mg/ml, and shaking for 3 minutes to obtain the copper nanoparticle uniform dispersion liquid.
Then, the copper nanoparticle dispersion was coated on one surface of PET, and dried at 100 ℃ for 3 minutes.
And covering the PET surface printed with the copper nanoparticles with a strip mask, wherein the line width is 3 microns, and the line spacing is 10 microns. The infrared light irradiation was carried out at a light energy density of 0.4j/cm2 for 3 minutes. Then the mask is removed, washed with water for 2 minutes, and then dried at 100 ℃ for 3 minutes to obtain the PET printed with the strip-shaped copper nanoparticles.
And (3) carrying out chemical plating on the PET, wherein the temperature of a plating solution is 50 ℃, the time of the plating solution is 10 minutes, and then drying for 3 minutes at 120 ℃ to obtain the strip-shaped conductive film. The sheet resistance of the conductive film obtained by the four-probe test was 3.5. omega./□.
The above embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the spirit and scope of the present invention, and various modifications and improvements made to the technical solutions of the present invention by those skilled in the art without departing from the design concept of the present invention shall fall within the protection scope of the present invention, and the technical contents of the present invention as claimed are all described in the claims.
Claims (4)
1. A method for preparing a patterned conductive film is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: dispersing metal nano particles into water, alcohol or a mixed solution of the water and the alcohol according to the concentration of 0.01-50mg/ml, and shaking for 2-5 minutes to obtain a uniform dispersion liquid of the metal nano particles;
step two: printing the dispersion on a base material, and then drying at the temperature of 90-110 ℃ for 1-5 minutes;
step three: covering a mask plate with a specific pattern on the surface printed with the metal nano-particles, irradiating by infrared light, wherein the light energy density is 0.1-2j/cm2, and the irradiation time is 1-5 minutes;
step four: and chemically plating and drying the substrate solidified with the metal nano particles, wherein the temperature of a plating solution is 40-60 ℃, the time of the plating solution is 2-30 minutes, the drying temperature is 80-150 ℃, and the drying time is 1-5 minutes, so that the conductive film with the specific pattern is obtained.
2. The method of claim 1, wherein the step of forming the patterned conductive film comprises: the metal nanoparticles comprise gold, silver and copper.
3. The method of claim 1, wherein the step of forming the patterned conductive film comprises: the printing mode comprises printing, spin coating, silk rod and slit coating.
4. The method of claim 1, wherein the step of forming the patterned conductive film comprises: the base material comprises PET, PC, PP and glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111045108.9A CN113744931A (en) | 2021-09-07 | 2021-09-07 | Preparation method of patterned conductive film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111045108.9A CN113744931A (en) | 2021-09-07 | 2021-09-07 | Preparation method of patterned conductive film |
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| CN113744931A true CN113744931A (en) | 2021-12-03 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010086825A (en) * | 2008-09-30 | 2010-04-15 | Dainippon Printing Co Ltd | Method of manufacturing conductive substrate and conductive substrate obtained by its method |
| CN101801674A (en) * | 2007-05-18 | 2010-08-11 | 应用纳米技术控股股份有限公司 | metallic ink |
| CN103680766A (en) * | 2013-12-31 | 2014-03-26 | 复旦大学 | Preparation method of conductive film |
| CN104160457A (en) * | 2012-03-09 | 2014-11-19 | 昭和电工株式会社 | Method for manufacturing transparent conductive pattern |
| CN104685577A (en) * | 2012-06-22 | 2015-06-03 | C3奈米有限公司 | Metal nanostructured networks and transparent conductive material |
| CN105164764A (en) * | 2013-04-26 | 2015-12-16 | 昭和电工株式会社 | Method for manufacturing electroconductive pattern and electroconductive pattern-formed substrate |
| CN108604482A (en) * | 2016-03-18 | 2018-09-28 | 国立大学法人大阪大学 | It is formed with the base material and its manufacturing method of metal nanometer line layer |
-
2021
- 2021-09-07 CN CN202111045108.9A patent/CN113744931A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101801674A (en) * | 2007-05-18 | 2010-08-11 | 应用纳米技术控股股份有限公司 | metallic ink |
| JP2010086825A (en) * | 2008-09-30 | 2010-04-15 | Dainippon Printing Co Ltd | Method of manufacturing conductive substrate and conductive substrate obtained by its method |
| CN104160457A (en) * | 2012-03-09 | 2014-11-19 | 昭和电工株式会社 | Method for manufacturing transparent conductive pattern |
| CN104685577A (en) * | 2012-06-22 | 2015-06-03 | C3奈米有限公司 | Metal nanostructured networks and transparent conductive material |
| CN105164764A (en) * | 2013-04-26 | 2015-12-16 | 昭和电工株式会社 | Method for manufacturing electroconductive pattern and electroconductive pattern-formed substrate |
| CN103680766A (en) * | 2013-12-31 | 2014-03-26 | 复旦大学 | Preparation method of conductive film |
| CN108604482A (en) * | 2016-03-18 | 2018-09-28 | 国立大学法人大阪大学 | It is formed with the base material and its manufacturing method of metal nanometer line layer |
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