CN113741149B - Overlay measuring device and optical equipment - Google Patents

Overlay measuring device and optical equipment Download PDF

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Publication number
CN113741149B
CN113741149B CN202010479603.XA CN202010479603A CN113741149B CN 113741149 B CN113741149 B CN 113741149B CN 202010479603 A CN202010479603 A CN 202010479603A CN 113741149 B CN113741149 B CN 113741149B
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imaging
illumination
overlay
switching
module
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CN113741149A (en
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周晓磊
杨晓青
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Shanghai Micro Electronics Equipment Co Ltd
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Shanghai Micro Electronics Equipment Co Ltd
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

The invention provides an overlay measuring device and an optical device, comprising: the illumination module is used for generating illumination beams to illuminate the overlay marks on the wafer; the illumination switching module is used for switching illumination modes to adapt to the measurement of different overlay marks; the imaging module is used for imaging the overlay mark; and the pupil modulation module is used for modulating the imaging of the overlay mark in cooperation with the switching of the illumination mode. According to the invention, the illumination mode is switched by the illumination switching module, and the integrated measurement of the IBO mark and the mu DBO mark can be realized by combining the modulation of the pupil modulation module on the alignment mark image, so that the integration of the measuring device is improved, and the adaptability of the measuring device to the alignment error is increased.

Description

Overlay measuring device and optical equipment
Technical Field
The invention relates to the field of integrated circuit manufacturing, in particular to an overlay measuring device and optical equipment.
Background
According to a photoetching measurement technology roadmap given by the semiconductor industry organization (ITRS), with the entrance of the Critical Dimension (CD) of a photoetching graph into 22nm and below process nodes, especially the application and development of the dual exposure and extreme ultraviolet lithography (EUVL) technology, the requirement for the measurement accuracy of photoetching process parameter alignment has entered the sub-nanometer field.
The existing measurement of lithography process parameter overlay (overlay) precision mainly includes two technical routes, namely Imaging-Based overlay measurement technology (IBO) Based on Imaging and image recognition and Diffraction-Based overlay measurement technology (DBO) Based on Diffraction light detection. Because bright field detection is susceptible to various defects on a silicon wafer substrate (e.g., rough background on the substrate, deformation of overlay marks in a chemical mechanical planarization process, etc.), the overlay measurement technique (IBO) based on imaging and image recognition has not been able to meet the requirements of new process nodes for overlay measurement. The overlay measurement technology (DBO) based on diffraction light detection obtains overlay errors by measuring asymmetry of light intensity between positive and negative diffraction levels in the diffraction angle resolution of an overlay mark, and the ± 1-level light intensity asymmetry has a linear relationship only when an overlay (OV, i.e., alignment accuracy of two layers in a device) value is small, and thus cannot adapt to measurement of a process piece with a large overlay error.
Therefore, it is necessary to develop an integrated measuring device which can simultaneously be compatible with the above two overlay measuring principles.
Disclosure of Invention
The invention aims to provide an overlay measuring device and optical equipment, which realize integrated measurement of an IBO mark and a mu DBO mark.
In order to achieve the above object, the present invention provides an overlay measuring apparatus, comprising:
the illumination module is used for generating illumination beams to illuminate the overlay marks on the wafer;
an illumination switching module for switching illumination modes to accommodate measurement of different overlay marks;
the imaging module is used for imaging the overlay mark;
and the pupil modulation module is used for modulating the imaging of the overlay mark in cooperation with the switching of the illumination mode.
Optionally, the illumination switching module includes at least one switching plectrum and at least two aperture diaphragms, and the switching of the illumination mode is realized by switching the aperture diaphragms and changing the relative positions of the switching plectrum and the aperture diaphragms.
Optionally, the illumination module sequentially includes a light source, an illumination collimation unit, and an illumination relay unit along the light propagation direction.
Optionally, the aperture stop is circumferentially disposed on a turntable, and the turntable is rotated to switch any one of the aperture stops between the illumination collimating unit and the illumination relay unit.
Optionally, the imaging module sequentially includes an imaging objective lens, a first light splitting prism, an imaging relay unit, an imaging mirror group, and an imaging detector along the light propagation direction.
Optionally, the pupil modulation module is disposed between the imaging relay unit and the imaging lens group.
Optionally, the number of the switching plectrum is one, and the switching plectrum is located between the illumination collimating unit and the aperture stop.
Optionally, the imaging module further includes a second beam splitter prism, and the second beam splitter prism is located between the pupil modulation module and the imaging lens group in the light propagation direction.
Optionally, the number of the switching shifting pieces, the number of the imaging mirror groups and the number of the imaging detectors are two, the two imaging mirror groups and the two imaging detectors are arranged on two sides of the second beam splitter prism in a one-to-one correspondence manner, and the two switching shifting pieces are respectively arranged on two sides of the second beam splitter prism and located between the second beam splitter prism and the imaging mirror groups.
Optionally, the overlay measuring apparatus further includes a field modulation module, configured to modulate the illumination field in cooperation with switching of the illumination mode, where the field modulation module is disposed between two relay lenses of the illumination relay unit.
Optionally, the overlay measuring apparatus further includes a processing module, configured to perform signal processing on the image of the overlay mark to obtain overlay information.
Optionally, the overlay mark comprises an IBO mark and a μ DBO mark, and the overlay measuring device is adapted to measure the IBO mark and the μ DBO mark in an integrated manner.
Correspondingly, the invention also provides optical equipment comprising the overlay measuring device.
In summary, the present invention provides an overlay measuring apparatus and an optical device, including an illumination module for generating an illumination beam to illuminate an overlay mark on a wafer; an illumination switching module for switching illumination modes to accommodate measurement of different overlay marks; the imaging module is used for imaging the overlay mark; and the pupil modulation module is used for modulating the imaging of the overlay mark in cooperation with the switching of the illumination mode. According to the invention, the illumination mode is switched by the illumination switching module, and the integrated measurement of the IBO mark and the mu DBO mark can be realized by combining the modulation of the pupil modulation module on the alignment mark image, so that the integration of the measuring device is improved, and the adaptability of the measuring device to the alignment error is increased.
Drawings
Fig. 1 is a schematic structural diagram of an overlay measuring apparatus according to an embodiment of the present invention;
FIG. 2A is a schematic illustration of an IBO mark;
FIG. 2B is a schematic diagram of a μ DBO mark;
fig. 3 is a schematic structural diagram of an overlay measuring apparatus according to an embodiment of the present invention.
Detailed Description
The overlay measuring device and the optical apparatus according to the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description and drawings, it being understood, however, that the concepts of the present invention may be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. The drawings are in simplified form and are not to scale, but are provided for convenience and clarity in describing embodiments of the invention.
The terms "first," "second," and the like in the description are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if a method described herein comprises a series of steps, the order in which these steps are presented herein is not necessarily the only order in which these steps can be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. Although elements in one drawing may be readily identified as such in other drawings, the present disclosure does not identify each element as being identical to each other in every drawing for clarity of description.
Example one
The embodiment provides an overlay measuring device, which comprises an illumination module, a measuring module and a control module, wherein the illumination module is used for generating an illumination beam to illuminate an overlay mark on a wafer; the illumination switching module is used for switching illumination modes to adapt to the measurement of different overlay marks; the imaging module is used for imaging the overlay mark; and the pupil modulation module is used for modulating the imaging light beam of the overlay mark in cooperation with the switching of the illumination mode.
Fig. 1 is a schematic structural diagram of an overlay measuring apparatus provided in this embodiment. As shown in fig. 1, the illumination module sequentially includes a light source 1, an illumination collimating unit 2, and an illumination relay unit 5 along a light propagation direction; the imaging module sequentially comprises an imaging objective lens 7, a first light splitting prism 8, an imaging relay unit 9, an imaging mirror group 11 and an imaging detector 12 along the light propagation direction. The illumination module and the imaging module may share a first beam splitter prism 8.
The light source 1 comprises any one of a xenon lamp, an LED, a mercury lamp or a halogen lamp, and the illumination collimation unit 2 comprises a collimation lens, a filter device, a polarization modulation device and the like, and is used for modulating wavelength, an illumination mode and the like so as to improve the process adaptability and the signal-to-noise ratio of the device. The illumination relay unit 6 comprises two relay lenses for delivery and commissioning of the illumination beam. The Numerical Aperture (NA) of the imaging objective lens 7 is larger than 0.9, and is a main component for collecting scattering measurement signals. The illumination light beam is incident on the wafer 15 overlay mark through the imaging objective lens 7 to form an imaging light beam, and the imaging light beam passes through the imaging objective lens 7 to the first light splitting prism 8, and is imaged on the imaging detector 12 through the refraction optimization of the first light splitting prism 8, the relay function of the relay system 9 and the imaging of the imaging lens group 11.
The overlay mark is typically a mark for overlay measurement that is present in a scribe line groove or Die area on the wafer 15, with different overlay mark marks being used depending on the IBO and μ DBO measurement principles. In this embodiment, the overlay mark includes an IBO mark and a μ DBO mark, and as shown in fig. 2A, the IBO mark includes a box in box diagram (box in box), a bar in column diagram (bar in bar), a frame in frame diagram (frame in frame), and may also be identified by Advanced Imaging Measurement (AIM). As shown in fig. 2B, the μ DBO mark is a grating type overlay mark, and the overlay value is measured by using an asymmetry characteristic of ± 1-level light intensity of the overlay mark.
The illumination switching module comprises at least one switching plectrum 3 and at least two aperture diaphragms 4, is arranged between the illumination collimation unit 2 and the illumination relay unit 5, and realizes the switching of illumination modes through the relative positions of the switching plectrum 3 and the aperture diaphragms 4. In this embodiment, the number of the switching dial 3 is one, and the switching dial 3 has three positions, which are a position 3-0, a position 3-1, and a position 3-2. The aperture stops 4 are circumferentially arranged on a turntable (not shown), and any one of the aperture stops 4 is switched to a position between the illumination collimating unit 2 and the illumination relay unit 5 by rotating the turntable. For example, the number of the aperture stop 4 is two, that is, an aperture stop 4-1 and an aperture stop 4-2, the aperture stop 4-1 is a stop which is full-light-passing and is suitable for a conventional illumination mode, and the aperture stop 4-2 has two openings 4-2-a and 4-2-B and is suitable for a unipolar illumination mode.
When the aperture diaphragm 4-1 is switched to the light path, the switching shifting piece 3 is located at the position 3-0, the switching shifting piece 3 does not shield the aperture diaphragm 4-1, and the illumination mode at the moment is a traditional illumination mode and is suitable for IBO mark measurement. When the aperture diaphragm 4-2 is switched to the light path, the switching plectrum 3 rotates anticlockwise for a certain angle from the position 3-0 to the position 3-1 to shield the opening 4-2-A, and the illumination light beam passes through the opening 4-2-B and is suitable for collecting + 1-level signal light marked by the mu DBO; the switching shifting sheet 3 rotates anticlockwise for a certain angle from the position 3-0 to the position 3-2 to shield the opening 4-2-B, and the illuminating light beams pass through the opening 4-2-A and are suitable for collecting-1-level signal light marked by the mu DBO.
The pupil modulation module is arranged between the imaging relay unit 9 and the imaging lens group 11, the pupil modulation module may be a diaphragm 10 with two different apertures, the diaphragm 10 includes an opening 10-1 and an opening 10-2, the aperture of the opening 10-2 is smaller than the aperture of the opening 10-1, the opening 10-1 is used for measuring an IBO mark, and the opening 10-2 is used for measuring a μ DBO mark. For example, the aperture of the opening 10-2 is equivalent to 0.5 times the Numerical Aperture (NA) of the imaging objective 7, and is used for filtering out the micro-mark 0-order light and passing the ± 1-order useful signal light in the μ DBO measurement.
The overlay measuring device provided by the embodiment further comprises a field modulation module, which is used for modulating the illumination field in cooperation with the switching of the illumination mode. The field modulation module may be, for example, a field stop 6, located between two relay lenses in the illumination relay unit 6. The field stop 6 includes at least two light passing holes with different apertures, and the field stop 6 is moved to switch any one of the light passing holes into the optical path. Illustratively, the field stop 6 includes a clear hole 6-1 and a clear hole 6-2, the aperture of the clear hole 6-2 is larger than that of the pass hole 6-1, the clear hole 6-1 is switched to the optical path for measuring the IBO mark, and the clear hole 6-2 is switched to the optical path for measuring the μ DBO mark.
The overlay measuring apparatus provided in this embodiment further includes a processing module 13, as shown in fig. 1, where the processing module 13 is connected to the imaging detector 12, and is configured to process an imaging signal of an overlay mark to obtain overlay information.
Specifically, when the overlay measuring apparatus provided in this embodiment performs an IBO measurement, the aperture stop 4-1 in the illumination switching module is switched to the optical path, the switching dial 3 is located at the position 3-0, the light-passing hole 6-1 of the field stop 6 in the field modulation module is switched to the optical path, the opening 10-1 of the diaphragm 10 in the pupil modulation module is switched to the optical path, an IBO mark is imaged through the illumination module and the imaging module, and an overlay value is obtained by calculating a deviation. When μ DBO measurement is carried out, a light through hole 6-2 of the field diaphragm 6 in the field modulation module is switched to a light path, an opening 10-2 of the diaphragm 10 in the pupil modulation module is switched to the light path, an aperture diaphragm 4-2 in the illumination switching module is switched to the light path, the switching plectrum 3 is sequentially located at a position 3-1 and a position 3-2, +/-1-level diffraction light signal acquisition is started, and an overlay value is calculated according to +/-1-level light intensity signals.
Correspondingly, the embodiment also provides an optical device, which comprises the overlay measuring device.
In the overlay measuring device provided in this embodiment, the illumination light beam selectively passes through the aperture stop by switching the position of the dial to realize the switching of the illumination mode, so as to realize the integrated measurement of the IBO mark and the μ DBO mark.
Example two
The embodiment provides an overlay measuring device, which comprises an illumination module, a measuring module and a control module, wherein the illumination module is used for generating an illumination beam to illuminate an overlay mark on a wafer; an illumination switching module for switching illumination modes to accommodate measurement of different overlay marks; the imaging module is used for imaging the overlay mark; and the pupil modulation module is used for modulating the imaging light beam of the overlay mark in cooperation with the switching of the illumination mode.
Fig. 3 is a schematic structural diagram of the overlay measuring apparatus provided in this embodiment. As shown in fig. 3, the illumination module sequentially includes a light source 1, an illumination collimating unit 2, and an illumination relay unit 5 along the light propagation direction; the imaging module sequentially comprises an imaging objective lens 7, a first light splitting prism 8, an imaging relay unit 9, a second light splitting prism 14, an imaging mirror group 11-1, an imaging mirror group 11-2, an imaging detector 12-1 and an imaging detector 12-2 along the light propagation direction. The imaging lens group 11-1 and the imaging detector 12-1 are disposed on one side of the second beam splitter 14, and the imaging lens group 11-2 and the imaging detector 12-2 are disposed on the other side of the second beam splitter 14. Preferably, two imaging lens groups and the imaging detectors are arranged on two adjacent sides of the second beam splitter prism 14 in a one-to-one correspondence. The illumination module and the imaging module may share a first beam splitter prism 8.
In this embodiment, the illumination switching module includes two switching dials and two aperture stops 4, and the two switching dials are respectively located between the second beam splitter prism 14 and the two imaging lenses. Each switching shifting piece is correspondingly provided with two positions, and the two switching shifting pieces are respectively positioned at the position 3-0-A and the position 3-0-B on the two sides of the second beam splitter prism 14, or respectively positioned at the position 3-1-A and the position 3-1-B on the two sides of the second beam splitter prism 14. The aperture diaphragm 4 comprises an aperture diaphragm 4-1 and an aperture diaphragm 4-2 which are circumferentially arranged on a rotary disc, and any aperture diaphragm 4 is switched to be between the illumination collimation unit 2 and the illumination relay unit 5 by rotating the rotary disc. The aperture diaphragm 4-1 is a diaphragm which is all light-transmitting and is suitable for a traditional illumination mode, and the aperture diaphragm 4-2 is provided with two openings 4-2-A and 4-2-B and is suitable for a single-pole illumination mode.
When the aperture diaphragm 4-1 is switched to the light path, the two switching plectrums are respectively positioned at the position 3-0-A and the position 3-0-B, namely the imaging light beam is not shielded, and the illumination mode at the moment is a traditional illumination mode and is suitable for measuring the IBO mark. When the aperture diaphragm 4-2 is switched to the optical path, the two switching dials are switched to a position 3-1-a and a position 3-1-B, a part of the imaging light beam passes through the imaging lens group 11-1 to be imaged on the imaging detector 12-1 through the second beam splitter 14, and is used for collecting + 1-order signal light of the μ DBO mark, and the other part of the imaging light beam passes through the imaging lens group 11-2 to be imaged on the imaging detector 12-2, and is used for collecting-1-order signal light of the μ DBO mark.
The pupil modulation module is arranged between the imaging relay unit 9 and the second beam splitter prism 14, the pupil modulation module may be a diaphragm 10 with two different apertures, the diaphragm 10 includes an opening 10-1 and an opening 10-2, the aperture of the opening 10-2 is smaller than that of the opening 10-1, the opening 10-1 is used for measuring an IBO mark, and the opening 10-2 is used for measuring a μ DBO mark. For example, the aperture of the opening 10-2 is equivalent to 0.5 times the Numerical Aperture (NA) of the imaging objective 7, and is used for filtering out the micro-mark 0-order light and passing the ± 1-order useful signal light in the μ DBO measurement.
The overlay measuring device provided by the embodiment further comprises a field modulation module, which is used for modulating the illumination field in cooperation with the switching of the illumination mode. The field modulation module may be, for example, a field stop 6, located between two relay lenses in the illumination relay unit 6. The field stop 6 includes at least two light passing holes with different apertures, and the field stop 6 is moved to switch any one of the light passing holes into the optical path. Illustratively, the field stop 6 includes a clear hole 6-1 and a clear hole 6-2, the aperture of the clear hole 6-2 is larger than that of the pass hole 6-1, the clear hole 6-1 is switched to the optical path for measuring the IBO mark, and the clear hole 6-2 is switched to the optical path for measuring the μ DBO mark.
The overlay measuring apparatus provided in this embodiment further includes a processing module 13, as shown in fig. 3, where the processing module 13 is connected to and connected to the imaging detector 12-1 and the imaging detector 12-2, and is configured to process the imaging signal to obtain overlay information.
Specifically, when the alignment measurement apparatus provided in this embodiment performs IBO measurement, the aperture stop 4-1 in the illumination switching module is switched to the optical path, the two switching dials are respectively located at positions 3-0-a and 3-0-B, the light-passing hole 6-1 of the field stop 6 in the field modulation module is switched to the optical path, the opening 10-1 of the diaphragm 10 in the pupil modulation module is switched to the optical path, an IBO mark is imaged through the illumination module and the imaging module, and an alignment value is obtained by calculating a deviation; when the mu DBO measurement is carried out, the aperture diaphragm 4-2 in the illumination switching module is switched to the light path, the two switching plectrums are respectively located at the position 3-1-A and the position 3-1-B, the light through hole 6-2 of the field diaphragm 6 in the field modulation module is switched to the light path, the opening 10-2 of the diaphragm 10 in the pupil modulation module is switched to the light path, the mu BO mark is imaged through the illumination module and the imaging module, a +/-1-level diffraction light signal set is collected, and an overlay value is calculated according to the intensity signal of +/-1-level diffraction light.
According to the overlay measuring device provided by the embodiment, the second beam splitter prism is additionally arranged in the imaging module, and the two switching shifting pieces are arranged on two sides of the second beam splitter prism, so that the switching of the switching shifting pieces during the mu DBO measurement in the first embodiment is avoided, and the measuring efficiency is improved. In addition, the embodiment selectively realizes the switching of the illumination mode through the imaging light beam by switching the position of the switching plectrum, and realizes the integrated measurement of the IBO and the μ DBO.
It should be noted that, in this specification, all the embodiments are described in a related manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on differences from other embodiments. In particular, for the structural embodiment, since it is substantially similar to the method embodiment, the description is relatively simple, and reference may be made to the partial description of the method embodiment for relevant points.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (12)

1. An overlay measurement device, comprising:
the illumination module is used for generating illumination beams to illuminate the overlay marks on the wafer;
the illumination switching module is used for switching illumination modes to adapt to measurement of different overlay marks, comprises at least one switching plectrum and at least two aperture diaphragms, and realizes switching of the illumination modes by switching the aperture diaphragms and changing the relative positions of the switching plectrum and the aperture diaphragms;
the imaging module is used for imaging the overlay mark;
and the pupil modulation module is used for modulating the imaging of the overlay mark in cooperation with the switching of the illumination mode.
2. The overlay measurement apparatus of claim 1 wherein the illumination module comprises, in order along the light propagation direction, a light source, an illumination collimation unit, and an illumination relay unit.
3. The overlay measurement apparatus of claim 2 wherein the aperture stops are circumferentially arranged on a turntable, the turntable being rotated to switch any one of the aperture stops between the illumination collimation unit and the illumination relay unit.
4. The overlay measurement apparatus according to claim 3, wherein the imaging module comprises an imaging objective lens, a first beam splitter prism, an imaging relay unit, an imaging mirror group and an imaging detector in sequence along a light propagation direction.
5. The overlay measurement apparatus of claim 4 wherein the pupil modulation module is disposed between the imaging relay unit and the set of imaging mirrors.
6. The overlay measurement apparatus of claim 5 wherein the number of said switching paddle, said set of imaging mirrors and said imaging detector is one, said switching paddle being located between said illumination collimation unit and said aperture stop.
7. The overlay measurement apparatus of claim 5 wherein the imaging module further comprises a second beam splitting prism located between the pupil modulation module and the set of imaging mirrors in a light propagation direction.
8. The overlay measuring apparatus according to claim 7, wherein the number of the switching dials, the imaging mirror groups and the imaging detectors is two, the two imaging mirror groups and the two imaging detectors are disposed on two sides of the second beam splitter in a one-to-one correspondence, and the two switching dials are disposed on two sides of the second beam splitter and located between the second beam splitter and the imaging mirror groups.
9. The overlay measurement device of any of claims 1-8, further comprising a field modulation module for modulating an illumination field in coordination with switching of illumination modes, wherein the field modulation module is disposed between two relay lenses of the illumination relay unit.
10. The overlay measurement apparatus of any of claims 1-8 further comprising a processing module for processing the imaging signal of the overlay mark to obtain overlay information.
11. The overlay measurement apparatus of any of claims 1-8 wherein the overlay marks comprise IBO marks and μ DBO marks, the overlay measurement apparatus adapted for integrated measurement of IBO marks and μ DBO marks.
12. An optical apparatus comprising an overlay measurement device according to any of claims 1-11.
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