CN113740784B - Ferromagnetic resonance vector magnetic field sensor with ultra-wide working range and application - Google Patents
Ferromagnetic resonance vector magnetic field sensor with ultra-wide working range and application Download PDFInfo
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- CN113740784B CN113740784B CN202110870954.8A CN202110870954A CN113740784B CN 113740784 B CN113740784 B CN 113740784B CN 202110870954 A CN202110870954 A CN 202110870954A CN 113740784 B CN113740784 B CN 113740784B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
Abstract
The ferromagnetic resonance vector magnetic field sensor with the ultra-wide working range and the application thereof comprise a coplanar waveguide CPW and an epitaxial yttrium iron garnet YIG thin-film device; the epitaxial yttrium iron garnet YIG thin-film device is arranged on the upper surface of the CPW; and a magnetic field is arranged outside the epitaxial yttrium iron garnet YIG thin film device. The invention uses the phenomenon that the ferromagnetic resonance frequency of the YIG film changes along with the change of an external magnetic field as the working principle of the sensor, and the obtained magnetic field sensor has the detection limit of 4nT @1Hz and higher sensitivity.
Description
Technical Field
The invention belongs to the technical field of magnetic field sensors, and particularly relates to a ferromagnetic resonance vector magnetic field sensor with an ultra-wide working range and application thereof.
Background
Magnetic field sensors can directly detect the presence, magnitude or direction of magnetic fields from the earth, permanent magnets, magnetized soft magnetic materials, electrical currents, and even from organs such as the biological heart or brain. Magnetic field sensors, as important components of sensors, have been widely used in geomagnetic navigation, industrial automation control, vehicle electronics, power grid monitoring, medical diagnosis, and other fields. With the continuous development of industries such as the internet of things and big data, the requirements for the performance of the sensor are higher and higher. Future sensors should integrate the advantages of high sensitivity, strong interference resistance, low cost, small size and the like.
Various techniques have been employed in the development of magnetic field sensors, including magnetic resonance, hall effect, magnetoresistance, flux gate, magnetoimpedance, and superconducting quantum interference. But the sensitivity of the traditional hall sensor is very low; the magneto-resistance sensor with high sensitivity and high integration degree sacrifices the measurement range and the anti-interference capability; the flux gate sensor has high power consumption and low response speed; the magnetic impedance sensor has complex process and difficult driving; superconducting quantum interferometers and traditional magnetic resonance instruments based on nuclear magnetic resonance or electron paramagnetic resonance are large in equipment and expensive in manufacturing cost.
Disclosure of Invention
The invention aims to provide a ferromagnetic resonance vector magnetic field sensor with an ultra-wide working range and application thereof, so as to solve the problems.
In order to achieve the purpose, the invention adopts the following technical scheme:
the ferromagnetic resonance vector magnetic field sensor with the ultra-wide working range comprises a coplanar waveguide CPW and an epitaxial yttrium iron garnet YIG thin-film device; the epitaxial yttrium iron garnet YIG thin-film device is arranged on the upper surface of the CPW; and a magnetic field is arranged outside the epitaxial yttrium iron garnet YIG thin film device.
Further, the CPW comprises a dielectric substrate and three parallel conduction bands; three mutually parallel conduction bands are arranged on the dielectric substrate; the middle conduction band is a central metal conduction band, and the two sides are grounding bands.
Further, the epitaxial YIG thin film device is disposed across three parallel conduction bands.
Further, the epitaxial yttrium iron garnet YIG thin film device comprises a single crystal gadolinium gallium garnet GGG substrate, a YIG functional layer and a platinum protective layer; the YIG functional layer is arranged between the single-crystal gadolinium gallium garnet GGG substrate and the platinum protective layer.
Further, the single-crystal gadolinium gallium garnet GGG substrate is oriented to (111).
Further, the process for growing the epitaxial yttrium iron garnet YIG thin film device adopts pulsed laser deposition PLD; the temperature during the growth is 850 ℃, and the oxygen pressure is 13 Pa; after deposition is finished, annealing in situ for 10min under the oxygen pressure of 100Pa, and then cooling to room temperature; the cooling rate was 2 ℃/min.
Furthermore, coplanar waveguide SMA interfaces are arranged on two sides of the CPW.
Further, the application of the ferromagnetic resonance vector magnetic field sensor with the ultra-wide working range is used for a Keysight E5071C type vector network analyzer to test. The phase change of the S _21 parameter of this type of ferromagnetic resonance vector magnetic field sensor was tested.
Compared with the prior art, the invention has the following technical effects:
the invention uses the phenomenon that the ferromagnetic resonance frequency of the YIG film changes along with the change of an external magnetic field as the working principle of the sensor, and the obtained magnetic field sensor has the detection limit of 4nT @1Hz and higher sensitivity. And compared to a typical magnetoresistive sensor, the ferroresonant type sensor has a working range up to 450mT, two orders of magnitude higher than a commercial magnetoresistive sensor with similar sensitivity. And the magnetic field sensor can detect the direction of a magnetic field, and when a weak magnetic field similar to the intensity of the geomagnetic field generates angular deflection, the angular resolution can reach 0.006 degrees.
Drawings
Fig. 1 shows a coplanar waveguide and a YIG thin film device thereon.
FIG. 2 is a diagram showing the variation of the ferromagnetic resonance absorption peak of the YIG thin-film device with the applied magnetic field. FIG. 2a is a graph showing the variation of the transmission parameter S _21 with frequency under different applied bias magnetic fields; FIG. 2b is the variation of the resonant absorption peak frequency with the magnitude of the applied magnetic field.
FIG. 3 is a sensor detection limit test; wherein FIG. 3a is the response of the phase of the S _21 parameter to an AC magnetic field signal applied at 700, 350 and 210nT at a bias magnetic field of 0.5 mT; fig. 3b shows the spectrum of the phase signal of the sensor S _21 parameter and the noise spectrum.
Fig. 4 shows the working range of the sensor. Phase response to the S _21 parameter of 20 μ T under 0, 100 and 450mT bias fields.
Fig. 5 shows the results of the sensor angle measurement. Where FIG. 5a is a sensitive axis angular step test; fig. 5b is an angle resolution limit test.
The single crystal gadolinium gallium garnet GGG substrate comprises a single crystal gadolinium gallium garnet GGG substrate 1, a YIG functional layer 2, a grounding band 3, a central metal conduction band 4 and a coplanar waveguide SMA interface 5.
Detailed Description
The invention is further described below with reference to the accompanying drawings:
a ferromagnetic resonance type magnetic field sensor includes a coplanar waveguide CPW, an epitaxial Yttrium Iron Garnet (YIG) thin film device, a microwave source, and a transmission parameter detector. The epitaxial YIG thin film device was placed over the central metal signal strip of the coplanar waveguide as shown in FIG. 1.
The epitaxial YIG thin film device substrate is (111) oriented single-crystal Gadolinium Gallium Garnet (GGG), and the process of YIG thin film growth adopts Pulsed Laser Deposition (PLD). The temperature during growth was 850 ℃ and the oxygen pressure was 13 Pa. After deposition, annealing in situ at 100Pa oxygen pressure for 10min, and then cooling to room temperature. The cooling rate was 2 ℃/min.
Under the action of an external magnetic field, the magnetic moment in the YIG film generates the larmor precession. When the precession frequency coincides with the microwave signal frequency, strong absorption of the microwave signal occurs. The precession frequency (the microwave resonance absorption frequency) is directly related to the magnitude of the applied magnetic field and can be expressed as
Wherein H is an applied magnetic field; hip,3Is an in-plane anisotropy field; meffIs an effective magnetization. The ferromagnetic resonance absorption peak of the sensor is shown in figure 2 as a function of the applied magnetic field. The resonance frequency corresponding to the absorption peak is increased along with the increase of the external magnetic field. Fitting a relation curve of the resonance frequency and the external magnetic field to obtain the formula (1): hip,3＝22mT，4πMeff＝240mT。
The detection limit of the magnetic field sensor was tested and the results are shown in fig. 3. At a bias magnetic field of 0.5mT, the resonant absorption frequency is 330 MHz. Three different magnetic field signals with the frequency of 1Hz and the intensity of 700, 350 and 210nT respectively are applied on the YIG film to transmit the parameter S21As shown in fig. 3a, exhibits a pronounced sinusoidal variation. In order to determine the limit of detection (LOD) of the sensor, the signal is analyzed by using a Fast Fourier Transform (FFT) method, a 42nT signal and a noise spectrum are observed in the frequency spectrum, and the equivalent magnetic noise spectral density observed at 1Hz is
As shown in fig. 3 b.
The magnetic field sensor was tested for its operating range and the results are shown in fig. 4. The 1Hz sine alternating current magnetic field (intensity is 20 mu T) is measured under different bias magnetic fields (0, 100, 450mT)21The change of the phase of the parameter can clearly observe the signal change rule consistent with the external sine alternating magnetic field under three bias magnetic fields, which indicates that the measurement range of the YIG ferromagnetic resonance magnetometer is more than 450 mT.
The magnetic field sensor was subjected to an angle-resolved test, the results of which are shown in fig. 5. The axis of the sensor was perpendicular to the applied magnetic field (50 μ T) and then the external field was rotated in 0.2 ° steps to measure S21The change in the phase parameter, as shown in fig. 5a, can identify a distinct step waveform. An alternating angle change signal (50 μ T) of 1Hz was used to determine the detection limit of the angular sensitivity. And analyzing the signal by using an FFT (fast Fourier transform) method to obtain the signal response intensity at 1Hz, wherein when the angle change is less than 0.006 degrees, the linear relation between the signal intensity and the angle change is not established any more, and a signal peak cannot be identified in a frequency spectrum. Indicating that the minimum angle change that can be identified is 0.006 deg. at a 50 ut navigation field.
Claims (6)
1. The ferromagnetic resonance vector magnetic field sensor with the ultra-wide working range is characterized by comprising a CPW (coplanar waveguide) and an epitaxial yttrium iron garnet YIG (yttrium iron garnet) thin-film device; the epitaxial yttrium iron garnet YIG thin-film device is arranged on the upper surface of the CPW; a magnetic field is arranged outside the epitaxial yttrium iron garnet YIG thin film device;
the CPW comprises a dielectric substrate and three parallel conduction bands; three mutually parallel conduction bands are arranged on the dielectric substrate; the middle conduction band is a central metal conduction band, and the two sides are grounding bands;
the epitaxial YIG thin film device is arranged across three parallel conduction bands.
2. The ultra-wide operating range ferroresonance vector magnetic field sensor of claim 1, wherein the epitaxial yttrium iron garnet YIG thin film device comprises a single crystal gadolinium gallium garnet GGG substrate and a YIG functional layer and a platinum protective layer; the YIG functional layer is arranged between the single-crystal gadolinium gallium garnet GGG substrate and the platinum protective layer.
3. An ultra-wide working range ferroresonance vector magnetic field sensor according to claim 2, wherein the single crystal gadolinium gallium garnet GGG substrate is oriented at 111.
4. The ultra-wide working range ferromagnetic resonance vector magnetic field sensor of claim 3, wherein the process of epitaxial yttrium iron garnet YIG thin film device growth employs Pulsed Laser Deposition (PLD); the temperature during the growth is 850 ℃, and the oxygen pressure is 13 Pa; after deposition is finished, annealing in situ for 10min under the oxygen pressure of 100Pa, and then cooling to room temperature; the cooling rate was 2 ℃/min.
5. The ultra-wide operating range ferromagnetic resonance vector magnetic field sensor of claim 1, wherein coplanar waveguide (CPW) interfaces are provided on both sides of the CPW.
6. Use of a ferromagnetic resonance vector magnetic field sensor with an ultra-wide operating range, characterized in that it is based on a ferromagnetic resonance vector magnetic field sensor with an ultra-wide operating range according to any of claims 1 to 5, for testing with a Keysight E5071C vector network analyzer.
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Citations (5)
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| GB1489873A (en) * | 1973-12-07 | 1977-10-26 | Microwave & Electronic Syst | Device including ferrimagnetic coupling element |
| JP2005201775A (en) * | 2004-01-16 | 2005-07-28 | Mitsuteru Kimura | Resonance type magnetic sensor, and magnetic field detector using the same |
| JP2016148639A (en) * | 2015-02-13 | 2016-08-18 | 株式会社村田製作所 | Magnetism sensor and magnetism detection circuit |
| CN106252802A (en) * | 2016-09-30 | 2016-12-21 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | YIG band elimination filter based on planarization resonance coupled structure and manufacture method |
| CN109811325A (en) * | 2019-03-28 | 2019-05-28 | 电子科技大学 | A kind of magnon crystal Magnetic Sensor and preparation method thereof |
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Patent Citations (5)
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|---|---|---|---|---|
| GB1489873A (en) * | 1973-12-07 | 1977-10-26 | Microwave & Electronic Syst | Device including ferrimagnetic coupling element |
| JP2005201775A (en) * | 2004-01-16 | 2005-07-28 | Mitsuteru Kimura | Resonance type magnetic sensor, and magnetic field detector using the same |
| JP2016148639A (en) * | 2015-02-13 | 2016-08-18 | 株式会社村田製作所 | Magnetism sensor and magnetism detection circuit |
| CN106252802A (en) * | 2016-09-30 | 2016-12-21 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | YIG band elimination filter based on planarization resonance coupled structure and manufacture method |
| CN109811325A (en) * | 2019-03-28 | 2019-05-28 | 电子科技大学 | A kind of magnon crystal Magnetic Sensor and preparation method thereof |
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| Title |
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| Theory of Electrically Tunable Thin-Film Electromagnetic Crystals Based on a Coplanar Waveguide;A.A. Nikitin. et al.;《2018 IEEE International Magnetics Conference (INTERMAG)》;20180427;1-2 * |
| 可实现三维磁场传感的硅基磁光微环芯片设计;倪双 等;《光学与光电技术》;20181210;第16卷(第06期);18-24 * |
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