CN113740614B - Method and system for measuring dielectric constant of material based on Kelvin probe force microscope - Google Patents

Method and system for measuring dielectric constant of material based on Kelvin probe force microscope Download PDF

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CN113740614B
CN113740614B CN202111016847.5A CN202111016847A CN113740614B CN 113740614 B CN113740614 B CN 113740614B CN 202111016847 A CN202111016847 A CN 202111016847A CN 113740614 B CN113740614 B CN 113740614B
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dielectric constant
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CN113740614A (en
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周峻
陈承相
李永飞
吴锴
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Xian Jiaotong University
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617—Measuring dielectric properties, e.g. constants
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof

Abstract

The method and the system for measuring the dielectric constant of the material based on the Kelvin probe force microscope comprise the following steps: fixing a sample to be detected on a sample table, and scanning by an open-loop dual-resonance mode Kelvin probe force microscope; gradually descending the probe to approach a sample to be detected, scanning for the first time to obtain the appearance of the sample, recording the thickness information of the sample, setting the distance between the probe and the sample, scanning for the second time to obtain the surface potential of the sample, and recording the electric signal of the sample; detecting double-frequency amplitude signals from the needle point to silicon oxide and from the needle point to a sample by using a phase-locked amplifier; solving the actual elastic coefficient of a probe cantilever of the Kelvin probe force microscope in an open-loop double-resonance mode; and (3) solving the actual elastic coefficient of the probe cantilever, extracting a double-frequency amplitude signal of the sample to be measured, calculating to obtain a corresponding capacitance gradient signal, calculating to obtain the actual dielectric constant of the sample to be measured according to a capacitance gradient formula of the probe tip to the sample to be measured, and completing the measurement. The invention can improve the accuracy of measurement.

Description

Method and system for measuring dielectric constant of material based on Kelvin probe force microscope
Technical Field
The invention belongs to the technical field of material dielectric constant measurement, and particularly relates to a method and a system for measuring a material dielectric constant based on a Kelvin probe force microscope.
Background
In the prior art, the dielectric constant is the excitation response of a material under the action of an applied external electric field, measures the electricity storage capacity of the material and is related to the frequency. In general, the insulating properties of a dielectric are inversely proportional to the dielectric constant, the dielectric constant in a vacuum is 1, and the dielectric constant of an ideal conductor is infinite. The current dielectric test means mainly measure from two aspects of electricity and optics, wherein the electricity is mainly measured by an alternating current impedance spectroscopy, and the optics is mainly measured by an optical ellipsometer. However, both methods are measured from a macroscopic view, the measured scale is at least tens of micrometers, the local nano dielectric property characterization of the material cannot be realized, and the measurement of the dielectric constant of the thin-layer two-dimensional material cannot be realized. In addition, the two-dimensional material is expensive, the cost of the macroscopic measurement method is high, and the alternating current impedance spectroscopy measurement can damage the sample to be measured. Integrated semiconductors have entered the field of nanoscale, and nano-optoelectronic devices made on the basis of two-dimensional materials are also required to achieve the measurement of their electrical properties with a resolution of the order of nanometers. On the other hand, various measurement modes have been derived based on atomic force microscopes, such as a scanning thermal microscope, a kelvin microscope, a scanning capacitance microscope, a piezoelectric force microscope, an electrostatic force microscope, and the like. The macroscopic Kelvin method is introduced into the atomic force microscope technology, the traditional Kelvin probe force microscope obtains surface potential information by compensating and recording the potential difference value of a needle point and a sample, but the traditional Kelvin probe force microscope cannot eliminate the phenomenon of energy band bending caused by direct current bias, and the measurement accuracy is poor.
Disclosure of Invention
The present invention is directed to the above-mentioned problems in the prior art, and an object of the present invention is to provide a method and a system for measuring a dielectric constant of a material based on a kelvin probe force microscope, which eliminate the bending of an energy band caused by a dc bias voltage, thereby improving the accuracy of electrical property measurement, and are simple and easy to operate, requiring a short testing time, simple to operate, and requiring few samples for each test.
In order to achieve the purpose, the invention has the following technical scheme:
a method for measuring the dielectric constant of a material based on a Kelvin probe force microscope comprises the following steps:
fixing a sample to be detected on a sample table, and scanning by an open-loop dual-resonance mode Kelvin probe force microscope;
gradually descending the probe to approach a sample to be detected, scanning for the first time to obtain the appearance of the sample, recording the thickness information of the sample, setting the distance between the probe and the sample, scanning for the second time to obtain the surface potential of the sample, and recording the electric signal of the sample;
detecting a double-frequency amplitude signal from a needle point to silicon oxide and from the needle point to a sample by using a phase-locked amplifier;
solving the actual elastic coefficient of a probe cantilever of the Kelvin probe force microscope in an open-loop double-resonance mode;
and calculating to obtain a corresponding capacitance gradient signal according to the actual elastic coefficient of the probe cantilever and a double-frequency amplitude signal of the sample to be measured, and calculating the actual dielectric constant of the sample to be measured according to a capacitance gradient formula of the probe tip to the sample to be measured to finish measurement.
As a preferable scheme of the method for measuring the dielectric constant of the material, before the fixing of the sample to be measured on the sample stage, the method further comprises the step of transferring the sample to be measured onto the P-type conductive silicon wafer with the silicon oxide layer by using a mechanical stripping method.
As a preferred scheme of the material dielectric constant measuring method, a sample to be measured is fixed on a sample table positioned below the scanning tube through a vacuum adsorption table.
As a preferable scheme of the dielectric constant measuring method of the material of the present invention, the solving of the actual elastic coefficient of the probe cantilever of the kelvin probe force microscope for the open-loop dual-resonance mode includes:
the electrostatic force existing between the needle tip and the sample is represented as
Figure BDA0003240137310000021
Where Δ V is the potential difference between the tip and the sample, i.e. Δ V = V DC -V CPD +V AC sinωt，V AC Is an alternating voltage, V, for driving the probe into vibration DC Is a DC bias voltage, V CPD Is the contact potential difference of the probe with the sample;
a frequency-multiplied signal is expressed as
Figure BDA0003240137310000022
The expression of the frequency doubling amplitude signal is->
Figure BDA0003240137310000023
Extracting a double frequency amplitude signal->
Figure BDA0003240137310000024
The double frequency amplitude signal and the capacitance gradient relation expression of the needle point and the sample to be detected are ^ 5>
Figure BDA0003240137310000025
Where k is the spring constant of the cantilever of the probe.
As a preferred scheme of the method for measuring the dielectric constant of the material, the capacitance gradient of the needle point to the silicon oxide is established
Figure BDA0003240137310000026
And a silica dielectric constant, has a ^ or a ^ on the needle tip versus silica capacitance gradient>
Figure BDA0003240137310000031
z is the distance from the tip to the silicon oxide, R is the radius of curvature of the probe tip, θ is the half-cone angle of the probe tip, t is the silicon oxide thickness, ε 0 Is a vacuum dielectric constant of ∈ sio2 Is the dielectric constant of silicon oxide;
substituting the known dielectric constant of silicon oxide of 3.9 into
Figure BDA0003240137310000033
Calibrating to obtain a simultaneous frequency-doubled amplitude signal A 2ω And the expression is used for reversely solving the actual value of k in the measurement process by utilizing normalization.
As a preferred scheme of the material dielectric constant measuring method, the capacitance gradient formula of the needle point to a sample to be measured is as follows:
Figure BDA0003240137310000032
when the actual elastic coefficient k of the cantilever of the probe is obtained, a double frequency amplitude signal A of the measured object is extracted 2ω Calculating to obtain corresponding capacitance gradient signal
Figure BDA0003240137310000034
In the formula, h is the thickness of the sample to be detected, epsilon is the dielectric constant of the sample to be detected, and the capacitance gradient signal is used for determining the value of the capacitance gradient>
Figure BDA0003240137310000035
And substituting the value into a formula to solve and calculate to obtain the actual dielectric constant of the sample to be measured, and finishing measurement.
As a preferable scheme of the material dielectric constant measuring method, the open-loop double-resonance mode Kelvin probe force microscope adopts a peak force tapping technology when measuring the appearance, so that the appearance scanning is carried out by keeping the atomic acting force between the probe and the sample to be measured.
On the other hand, the invention also provides a system for realizing the method for measuring the dielectric constant of the material based on the Kelvin probe force microscope, which comprises a laser transmitter, a photoelectric detector, a signal processing module, an alternating electric field generation power supply module, a first phase-locked loop amplifier, a second phase-locked loop amplifier and a probe connected to a probe cantilever; the first phase-locked loop amplifier and the second phase-locked loop amplifier are connected to the signal processing module and respectively output a frequency doubling signal and a frequency doubling signal; when the first scanning is carried out, a laser emitter emits a laser signal to hit a probe cantilever, a photoelectric detector collects an optical signal which changes due to the fluctuation of the appearance of a sample to be detected, the optical signal is processed and reduced into appearance information of the sample to be detected through a signal processing module, when the second scanning is carried out, the probe is scanned at a constant height, an alternating electric field is generated through an alternating electric field to generate a power supply module to apply alternating electric potential to the probe, the alternating electric field is applied to a capacitor system formed by a needle point, a sample and a substrate, and the electric information on the sample to be detected influences the vibration state of the probe, so that the electric information of the sample to be detected is recorded, and the dielectric constant of the material is obtained.
Compared with the prior art, the invention has at least the following beneficial effects: compared with the traditional dielectric constant test method, the alternating-current impedance spectroscopy and the optical ellipsometer test both need that the sample size is large enough, and the curvature radius of the probe tip can even be about 5 nanometers, so that the local dielectric property of the nano material can be detected by the measurement method provided by the invention. Compared with the traditional Kelvin probe microscopy, the open-loop double-resonance Kelvin probe microscopy has zero direct current feedback, eliminates energy band bending caused by direct current bias in semiconductor testing, and thus effectively improves the accuracy of electrical property measurement. The invention adopts open-loop double resonance Kelvin probe microscopic technique to measure and obtain the double frequency voltage signal of the sample, and converts the double frequency voltage signal into the capacitance gradient of the probe and the measured sample to link and solve the dielectric constant.
Furthermore, the open-loop double-resonance Kelvin probe microscopic technology adopts a peak force tapping technology when measuring the appearance, so that a certain atomic force is kept between the probe and the sample to scan the appearance, and the sample to be measured is hardly damaged.
Drawings
FIG. 1 is a schematic structural diagram of a dielectric constant measurement system of a material based on a Kelvin probe force microscope according to an embodiment of the present invention;
FIG. 2 shows the hexagonal boron nitride hBN Kelvin probe force microscopy topography measured by the embodiment of the invention;
FIG. 3 is a graph of the double frequency voltage information of hexagonal boron nitride hBN measured according to an embodiment of the invention;
FIG. 4 tip-to-silicon oxide electrical Rong Yijie derivatives for normalization of calibrated probe elastic coefficients in accordance with embodiments of the present invention
Figure BDA0003240137310000041
A schematic diagram;
FIG. 5 shows the first derivative of capacitance of a tip with respect to a sample under test for calculating the dielectric constant of the sample according to an embodiment of the present invention
Figure BDA0003240137310000042
Schematic illustration.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The method for measuring the dielectric constant of the material based on the Kelvin probe force microscope comprises the following steps of:
step 1, transferring a sample to be detected to a P-type conductive silicon wafer with a 300-nanometer silicon oxide layer by using a mechanical stripping method;
step 2, fixing a sample to be detected on a sample table positioned below the scanning tube by using a vacuum adsorption table, and selecting an open-loop double-resonance mode of the Kelvin probe force microscope;
step 3, in the measuring process, the probe gradually descends to approach the sample, the appearance of the sample is obtained through the first scanning, the thickness information of the sample is recorded, the distance between the probe and the sample is set to be z, the surface potential of the sample is obtained through the second scanning, and the electric signal of the sample is recorded;
step 4, detecting the frequency doubling amplitude A from the needle point to the silicon oxide and from the needle point to the sample by using a phase-locked amplifier 2ω A signal;
step 5, the electrostatic force existing between the needle tip and the sample can be expressed as
Figure BDA0003240137310000051
Where Δ V is the potential difference between the tip and the sample, i.e. Δ V = V DC -V CPD +V AC sinωt，V AC Is an alternating voltage, V, for driving the probe into vibration DC Is a DC bias voltage, V CPD The electrostatic force can be divided into a direct current term, a frequency doubling term and a frequency doubling term for the open-loop double-resonance Kelvin probe force microscope technology, wherein a frequency doubling signal is ^ H>
Figure BDA0003240137310000052
The double frequency signal is->
Figure BDA0003240137310000053
Extracting a double frequency signal>
Figure BDA0003240137310000054
The double frequency signal is associated with the capacitance gradient of the needle tip to the measured object as->
Figure BDA0003240137310000055
k is the elastic coefficient of the cantilever of the probe, and establishes a tip-to-silica capacitance gradient->
Figure BDA0003240137310000056
And the dielectric constant of silicon oxide, has->
Figure BDA0003240137310000057
z is the distance from the tip to the silicon oxide, R is the radius of curvature of the probe tip, θ is the half cone angle of the probe tip, t is the silicon oxide thickness, ε 0 Is a vacuum dielectric constant of ∈ sio2 For the silicon oxide dielectric constant, a known silicon oxide dielectric constant of 3.9 is substituted into->
Figure BDA00032401373100000511
Calibration curve, simultaneous double frequency signal A 2ω Normalizing to reversely calculate the actual value of k in the measuring process;
step 6, when the actual elastic coefficient k of the probe cantilever is obtained, extracting a double frequency signal A of the measured object 2ω Calculating to obtain corresponding capacitance gradient signal
Figure BDA0003240137310000058
At the moment, the capacitance gradient of the needle tip to the tested sample has
Figure BDA0003240137310000059
h is the thickness of the tested sample, epsilon is the dielectric constant of the tested sample, and the capacitance gradient signal is used for determining the value of the capacitance gradient>
Figure BDA00032401373100000510
And substituting the value into a formula to solve and calculate to obtain the actual dielectric constant of the measured sample, and finishing measurement.
Referring to fig. 1, a dielectric constant measuring system for a material based on a kelvin probe force microscope comprises a laser transmitter 1, a photoelectric detector 2, a signal processing module 3, an alternating electric field generating power supply module, a first phase-locked loop amplifier 4, a second phase-locked loop amplifier 5 and a probe connected to a probe cantilever; the first phase-locked loop amplifier 4 and the second phase-locked loop amplifier 5 are connected to the signal processing module 3 and respectively output a frequency doubling signal and a frequency doubling signal; when the first scanning is carried out, the laser emitter 1 emits laser signals to irradiate a probe cantilever, the photoelectric detector 2 collects optical signals which change due to the fluctuation of the appearance of a sample to be detected, the optical signals are processed and reduced into appearance information of the sample to be detected through the signal processing module 3, when the second scanning is carried out, the probe scans at a constant height, the alternating electric field is generated through the alternating electric field to generate the power supply module to apply alternating electric potential to the probe, the alternating electric field is applied to the capacitor system formed by the needle point, the sample and the substrate, and the electric information on the sample to be detected influences the vibration state of the probe, so that the electric information of the sample to be detected is recorded, and the dielectric constant of the material is obtained.
Compared with the traditional Kelvin probe force microscope, the open-loop double-resonance Kelvin probe force microscope has zero direct current feedback, and can eliminate the energy band bending phenomenon caused by direct current bias in the semiconductor test, thereby improving the accuracy of electrical property measurement. In addition, the experimental parameter setting of the open-loop double-resonance Kelvin probe force microscope is easier than that of the traditional method. In a word, compared with the traditional dielectric constant measurement method, the open-loop double-resonance Kelvin probe force microscope not only can realize the measurement of the sample to be measured with nanometer resolution, but also needs less test time, is simpler to operate and needs less samples for each test.
In another embodiment of the invention, a conductive probe is used having a nominal 3N/m spring rate, a maximum of 6.0N/m, a minimum of 1.5N/m, a resonant frequency of 75kHz, a radius of curvature of the probe tip of 25nm, and a half cone angle of 17.5 ℃. The test uses a p-type conductive silicon wafer covered with 300nm silicon oxide. Taking the measurement of the dielectric constant of the semiconductor two-dimensional material hexagonal boron nitride hBN as an example, the instrument is connected according to the test system shown in figure 1, and the specific measurement steps are as follows:
step 1, transferring hexagonal boron nitride hBN to a P-type conductive silicon wafer with a 300nm silicon oxide layer by using a mechanical stripping method;
step 2, fixing the hexagonal boron nitride hBN material on a sample table positioned below the scanning tube by using a vacuum adsorption table, and selecting an open-loop double-resonance mode of a Kelvin probe force microscope; (ii) a
Step 3, in the measurement process, the probe gradually approaches to the hexagonal boron nitride hBN material, the morphology of the hexagonal boron nitride hBN is obtained through first scanning, as shown in fig. 2, the thickness of a thin layer of the hexagonal boron nitride hBN is 20.5nm, the distance between the probe and a sample is set to be 30nm, second scanning is carried out, the surface potential of the hexagonal boron nitride hBN is obtained, and the electric signal of the hexagonal boron nitride hBN material is recorded;
step 4, dividing the electrostatic force into straight lines for the open-loop double-resonance Kelvin probe force microscopy technologyStream term, a frequency multiplication term and a frequency doubling term, wherein a frequency doubling signal is
Figure BDA0003240137310000071
The double frequency signal is->
Figure BDA0003240137310000072
The frequency doubling amplitude A from the needle point to the silicon oxide is obtained by the detection of a phase-locked amplifier 2ω Voltage signal 14.85mV, frequency-doubled amplitude a of needle tip to hexagonal boron nitride hBN 2ω The voltage signal was 14.1mV, as shown in FIG. 3;
step 5, in the testing process, an alternating voltage V with the frequency of 5kHz and the size of 8V is applied to the probe tip AC Establishing the relation between the frequency doubling signal and the capacitance gradient of the needle tip to the measured object as
Figure BDA0003240137310000073
By linking the silicon oxide dielectric constant and the capacitance gradient of the tip to silicon oxide->
Figure BDA0003240137310000074
To normalize the actual elastic coefficient of the cantilever of the calibration probe, knowing that the dielectric constant of silica is 3.9, into the formula->
Figure BDA0003240137310000075
And &>
Figure BDA0003240137310000076
Calculating to obtain the actual elastic coefficient k of the probe cantilever to be 1.97N/m, as shown in FIG. 4;
step 6, when the actual elastic coefficient k of the cantilever of the probe and the double frequency signal A of the hexagonal boron nitride hBN are obtained 2ω Substituting into the formula
Figure BDA0003240137310000077
The dielectric constant of hexagonal boron nitride hBN in the perpendicular electric field direction was calculated to be 6.8 as shown in fig. 5.
The invention provides a simple method for nondestructive detection of a dielectric constant of a nano material based on an open-loop Kelvin microscope technology, and solves the problem that the dielectric response of the material under a nano scale cannot be measured by the traditional method.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (5)

1. A method for measuring the dielectric constant of a material based on a Kelvin probe force microscope is characterized by comprising the following steps of:
fixing a sample to be detected on a sample table, and scanning by an open-loop dual-resonance mode Kelvin probe force microscope;
gradually descending the probe to approach a sample to be detected, scanning for the first time to obtain the appearance of the sample, recording the thickness information of the sample, setting the distance between the probe and the sample, scanning for the second time to obtain the surface potential of the sample, and recording the electric signal of the sample;
detecting a double-frequency amplitude signal from a needle point to silicon oxide and from the needle point to a sample by using a phase-locked amplifier;
solving the actual elastic coefficient of a probe cantilever of the Kelvin probe force microscope aiming at the open-loop double-resonance mode, wherein the actual elastic coefficient comprises the following steps:
the electrostatic force existing between the needle tip and the sample is represented as
Figure FDA0003804944700000011
Where Δ V is the potential difference between the tip and the sample, i.e. Δ V = V DC -V CPD +V AC sinω t ，V AC Is an alternating voltage, V, for driving the probe into vibration DC Is a DC bias voltage, V CPD Is the contact potential difference of the probe with the sample;
a frequency-multiplied signal is expressed as
Figure FDA0003804944700000012
The expression of the frequency doubling amplitude signal is->
Figure FDA0003804944700000013
Extracting a double frequency amplitude signal->
Figure FDA0003804944700000014
The relation expression of the double frequency amplitude signal and the capacitance gradient of the needle point and the sample to be measured is
Figure FDA0003804944700000015
Wherein k is the elastic coefficient of the probe cantilever;
establishing tip-to-silica capacitance gradient
Figure FDA0003804944700000016
And the dielectric constant of silicon oxide, has->
Figure FDA0003804944700000017
z is the distance from the tip to the silicon oxide, R is the radius of curvature of the probe tip, θ is the half-cone angle of the probe tip, t is the silicon oxide thickness, ε 0 Is a vacuum dielectric constant of ∈ sio2 Is the dielectric constant of silicon oxide;
substituting the known dielectric constant of silicon oxide into 3.9
Figure FDA0003804944700000018
Calibrating to obtain a simultaneous frequency-doubled amplitude signal A 2ω An expression, namely reversely solving the actual value of k in the measurement process by utilizing normalization;
calculating to obtain a corresponding capacitance gradient signal according to the actual elastic coefficient of the probe cantilever and a double-frequency amplitude signal of the sample to be measured, and calculating the actual dielectric constant of the sample to be measured according to a capacitance gradient formula of the probe tip to the sample to be measured to finish measurement;
the capacitance gradient formula of the needle point to the sample to be detected is as follows:
Figure FDA0003804944700000021
when the actual elastic coefficient k of the cantilever of the probe is obtained, a double frequency amplitude signal A of the measured object is extracted 2ω Calculating to obtain corresponding capacitance gradient signal
Figure FDA0003804944700000022
In the formula, h is the thickness of the sample to be measured, epsilon is the dielectric constant of the sample to be measured, and the capacitance gradient signal is converted into a voltage signal
Figure FDA0003804944700000023
And substituting the value into a formula to solve and calculate to obtain the actual dielectric constant of the sample to be measured, and finishing measurement.
2. The Kelvin probe force microscope-based material dielectric constant measurement method according to claim 1, wherein before fixing the sample to be measured on the sample stage, the method further comprises transferring the sample to be measured onto a P-type conductive silicon wafer with a silicon oxide layer by using a mechanical stripping method.
3. The Kelvin probe force microscope-based material dielectric constant measurement method according to claim 1, wherein a sample to be measured is fixed on a sample stage located below the scanning tube by a vacuum adsorption stage.
4. The Kelvin probe force microscope-based material dielectric constant measurement method according to claim 1, wherein the open-loop double-resonance mode Kelvin probe force microscope adopts a peak force tapping technology when measuring the morphology, so that an atomic acting force is kept between a probe and a sample to be measured to perform morphology scanning.
5. A system for realizing the Kelvin probe force microscope-based material dielectric constant measurement method is characterized by comprising a laser transmitter (1), a photoelectric detector (2), a signal processing module (3), an alternating electric field generation power supply module, a first phase-locked loop amplifier (4), a second phase-locked loop amplifier (5) and a probe connected to a probe cantilever; the first phase-locked loop amplifier (4) and the second phase-locked loop amplifier (5) are connected to the signal processing module (3) and respectively output a frequency doubling signal and a frequency doubling signal; when the probe is scanned for the first time, a laser signal is emitted by a laser emitter (1) and is irradiated onto a probe cantilever, an optical signal changed due to the fluctuation of the appearance of a sample to be detected is collected by a photoelectric detector (2), the optical signal is processed and reduced into appearance information of the sample to be detected by a signal processing module (3), when the probe is scanned for the second time, the probe is scanned at a constant height, an alternating electric potential is applied to the probe by a power supply module generated by an alternating electric field, the alternating electric field is applied to a capacitor system formed by a needle point, a sample and a substrate, and the electric information of the sample to be detected is influenced by the electric information on the sample to be detected, so that the electric information of the sample to be detected is recorded, and the dielectric constant of the material is obtained.
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