CN113737278B - Titanium oxide-doped spin-on glass curing device - Google Patents
Titanium oxide-doped spin-on glass curing device Download PDFInfo
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- CN113737278B CN113737278B CN202110864294.2A CN202110864294A CN113737278B CN 113737278 B CN113737278 B CN 113737278B CN 202110864294 A CN202110864294 A CN 202110864294A CN 113737278 B CN113737278 B CN 113737278B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/18—Quartz
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Abstract
The invention discloses a titanium oxide-doped spin-coating glass curing device, which comprises a reaction furnace, wherein the reaction furnace is designed as a reverse quartz double-furnace tube, the upper end of the reaction furnace is provided with a quartz partition plate, the quartz partition plate divides an inner quartz tube and an outer quartz tube of the reaction furnace into an inner channel and an outer channel, the inner channel is provided with a first air inlet and a second air inlet, the outer channel is provided with an air outlet, the top end of the reaction furnace is provided with a feed inlet, a multilayer graphite base is arranged above the feed inlet, the multilayer graphite base enters the feed inlet through a lifting mechanism to react, the outer tube wall of the reaction furnace is respectively provided with a first coil and a second coil from top to bottom, and the first coil and the second coil are used for heating the reaction furnace. The crystal growth direction is guided, the reaction temperature control precision is greatly improved, and the overall quality of the product is improved.
Description
Technical Field
The invention relates to the technical field of EUV optical material glass preparation, in particular to a titanium oxide doped spin-on glass curing device.
Background
Heretofore, in photolithography, a fine circuit pattern is generally transferred onto a wafer using an exposure apparatus to produce an integrated circuit. Along with high integration and high functionality of integrated circuits, miniaturization of integrated circuits has been a development demand, and an exposure apparatus is required to form an image of a circuit pattern on a wafer at high resolution in a deep focal depth, and in these cases, a photolithography technique using light of 13nm in wavelength among EUV light (extreme ultraviolet light) as an exposure light source is an optimal choice because it can be applied to printing of a feature size of 50nm or less. The imaging principle of EUV lithography (hereinafter referred to as "EUVL") is the same as that of conventional lithography to the extent that a mask pattern is transferred by an optical projection system. However, in the energy region of EUV light, no material allows light to pass through. Therefore, a refractive optical system cannot be used, and the optical system is required to be a reflective optical system in all cases.
TiO2-SiO2 is known to be a very low thermal expansion coefficient material having a smaller thermal expansion Coefficient (CTE) than quartz glass, and therefore, TiO2-SiO2 glass is expected to be used as an optical material for an exposure apparatus for EUVL, however, the prior art has problems of poor working efficiency, poor temperature control effect, low practicability of a reaction furnace tube, and the like in the curing process of TiO2-SiO2 glass, and the problems are in need of solution.
Disclosure of Invention
Aiming at the problems, the invention provides a titanium oxide doped spin-on glass curing device, which mainly solves the problems in the background technology.
The invention provides a titanium oxide-doped spin-on glass curing device which comprises a reaction furnace, wherein the reaction furnace is designed as a reverse furnace tube, a quartz partition plate is arranged at the upper end of the reaction furnace, the quartz partition plate divides a double quartz tube of the reaction furnace into an inner channel and an outer channel, a first air inlet and a second air inlet are arranged on the inner channel, an air outlet is arranged on the outer channel, a feed inlet is arranged at the top end of the reaction furnace, a multilayer graphite base is arranged above the feed inlet, the multilayer graphite base enters the feed inlet through a lifting mechanism to react, a first coil and a second coil are respectively arranged on the outer tube wall of the reaction furnace from top to bottom, and the first coil and the second coil are used for heating the reaction furnace.
The further improvement is that the first air inlet is used for introducing nitrogen, the second air inlet is used for introducing argon or helium, the air outlet is connected with a vacuum pipeline, and gas enters the reaction furnace through the inner channel and is discharged out of the reaction furnace through the outer channel.
The further improvement is that the first coil is a direct current coil, and the temperature of the first coil is kept to be less than 1100 ℃ through resistance heating.
The further improvement is that the second coil is a direct current and radio frequency coil, and the temperature of the second coil is kept to be lower than 1700 ℃ through resistance and electromagnetic heating.
The multilayer graphite base comprises a base body, the base body comprises a multilayer base, a quartz base material is arranged on the surface of each base, a groove is formed in the center of each quartz base material and used for filling titanium oxide doped spin-on glass, a graphite hanger is arranged above the base body and connected with the lifting mechanism to lift the multilayer graphite base up and down.
The further improvement is that the multilayer graphite base is also provided with a rotating mechanism, and the rotating mechanism is used for rotating the multilayer graphite base to ensure that the multilayer graphite base is heated uniformly.
In a further improvement, the multilayer graphite base is integrally made of graphite.
The further improvement is that the quartz double furnace tube and the quartz partition plate are designed to be integrally formed.
The further improvement is that the quartz double furnace tube and the quartz partition plate are of two mutually independent structures.
The further improvement is that the number of the first coil and the second coil can be respectively the number of the multi-zone heating coils which are gradually changed from top to bottom, and the end view is determined by the temperature gradient requirement from top to bottom.
Compared with the prior art, the invention has the beneficial effects that:
the invention designs a curing device for titanium oxide doped spin-on glass, which utilizes a reverse reaction furnace tube and a multilayer graphite base and uses a coil type induction heating mode, so that the radial space can be greatly saved, the temperature of the graphite base can be accurately controlled, the crystal growth direction can be guided, the reaction temperature control precision can be greatly improved, and the overall quality of a product can be improved.
Drawings
FIG. 1 is a schematic overall structure diagram of an embodiment of the present invention;
FIG. 2 is a schematic structural view of a multi-layered graphite susceptor according to an embodiment of the present invention;
FIG. 3 is a schematic view of a gas flow direction of a reactor according to an embodiment of the present invention;
wherein: 1. a double quartz tube reaction furnace; 2. a quartz partition plate; 3. a multilayer graphite susceptor; 31. a graphite hanger; 32. a base surface; 33. a base body; 34. a quartz substrate; 35. titanium oxide doped spin-on glass; 4. a first air inlet; 5. a second air inlet; 6. an air outlet; 7. a first coil; 8. a second coil.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, 2 and 3, a titanium oxide-doped spin-on-glass curing apparatus includes a reaction furnace 1, the reaction furnace 1 is designed as a reverse furnace tube, the upper end of the reaction furnace 1 is provided with a quartz partition plate 2, the quartz partition plate 2 divides the inner and outer of the double quartz tubes of the reaction furnace 1 into an inner channel and an outer channel, the inner channel is provided with a first air inlet 4 and a second air inlet 5, the outer channel is provided with an air outlet 6, a feed inlet is arranged at the top end of the reaction furnace 1, a multi-layer graphite base 3 is arranged above the feed inlet, multilayer graphite base 3 passes through elevating system and gets into the feed inlet reacts, be provided with first coil 7 and second coil 8 on the outer pipe wall of reacting furnace 1 from top to bottom respectively, first coil 7 with second coil 8 is used for doing reacting furnace 1 heats.
In a preferred embodiment of the present invention, the first gas inlet 4 is used for introducing nitrogen, the second gas inlet 5 is used for introducing argon or helium, the gas outlet 6 is connected to a vacuum pipeline, gas enters the reaction furnace 1 through the inner channel, and gas is discharged from the reaction furnace 1 through the outer channel.
In a preferred embodiment of the present invention, the first coil 7 is a dc coil, and the first coil 7 is heated by resistance to maintain a temperature of less than 1100 ℃.
As a preferred embodiment of the present invention, the second coil 8 is a dc + rf coil, and the second coil 8 maintains a temperature of less than 1700 ℃ by resistance + electromagnetic heating.
As a preferred embodiment of the present invention, the multilayer graphite susceptor 3 includes a susceptor body 33, the susceptor body 33 includes a multilayer susceptor, a quartz substrate 34 is disposed on each susceptor surface 32, a groove is disposed in the center of the quartz substrate 34, the groove is used for filling titanium oxide doped spin-on glass 35, a graphite hanger 31 is disposed above the susceptor body 33, and the graphite hanger 31 is connected to the lifting mechanism to realize the up-and-down lifting of the multilayer graphite susceptor 3.
As a preferred embodiment of the present invention, the multilayer graphite base 3 is further provided with a rotating mechanism, and the rotating mechanism is used for rotating the multilayer graphite base 3 to make it heated uniformly.
In a preferred embodiment of the present invention, the multi-layered graphite susceptor 3 is integrally made of graphite.
As a preferred embodiment of the invention, the quartz double furnace tube and the quartz partition plate 2 are designed to be integrally formed.
As a preferred embodiment of the invention, the quartz double furnace tube and the quartz partition plate 2 are two structures independent of each other.
As a preferred embodiment of the present invention, the number of the first coil 7 and the second coil 8 can be gradually changed from top to bottom according to the requirement of the temperature gradient from top to bottom, the quartz partition plate and the quartz inner furnace tube can be an integrated structure or two separable independent structures, and the end view is determined by the airflow stability, laminar flow and fine dust distribution.
Furthermore, in the two-stage heating coil with reference to fig. 1, the temperature gradient may be too severe when the temperature is increased from top to bottom, so that the Mask (Mask) must be lowered to a nearly uncontrollable slow speed, and a Single Crystal Mask (Single Crystal) cannot be formed, and the quality of the generated Mask is not easily controlled. Therefore, the Temperature Gradient (Temperature Gradient) of the mask descending is reduced by increasing more Temperature equalizing regions from top to bottom to form an Epitaxial or Epitaxial (Epitaxial) mask, so that the single crystal mask can be formed at a higher descending speed, and the mask quality is better and closer to the single crystal.
Compared with the prior art, the invention has the beneficial effects that:
the invention designs a curing device for titanium oxide doped spin-on glass, which utilizes a reverse double-quartz-tube reaction furnace tube and a multilayer graphite base and uses a coil type induction heating mode, so that the radial space can be greatly saved, the temperature of the graphite base can be accurately controlled, the crystal growth direction can be guided, the reaction temperature control precision can be greatly improved, and the overall quality of a product can be improved.
The invention has the advantages that:
1. top loading (z direction) quartz single direction crystal growth > reversal furnace;
2. the stress of the titanium oxide doped spin-on glass 35 is absorbed to the edge and bottom single crystal quartz;
3. the growth bag formed by the amorphous silicon oxide can guide the growth direction of the crystal;
4. the growth temperature is controlled by vertical two heating zones, and a graphite crucible is not needed;
5. the direct current and radio frequency induction heater greatly saves radial space;
6. the graphite hanger is easy to add a rotating mechanism, the leveling precision is high, the temperature is uniformly heated by rotating the graphite hanger 31, and meanwhile, the graphite hanger 31 can be leveled, so that the low-thermal-expansion material for the extreme ultraviolet lithography can be correctly grown on quartz (substrate) with the thickness of less than 1cm in a unidirectional manner;
7. the direct current coil and the direct current and radio frequency coil are controlled by an independent power supply, and the temperature of the multi-stage graphite base can be independently increased or reduced;
8. the flowing direction of the gas is still from the inner pipe to the outer pipe, so that the generation of particles is avoided;
9. there is enough clearance between the multi-stage graphite base and the inner edge of the inner tube to compensate the temperature drop (1700-.
In the drawings, the positional relationship is described for illustrative purposes only and is not to be construed as limiting the present patent; it should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. The utility model provides a titanium oxide doping spin-on glass solidification equipment, its characterized in that, includes reacting furnace (1), reacting furnace (1) is reverse quartz double-furnace tube design, quartz divider plate (2) have been seted up to the upper end of reacting furnace (1), quartz divider plate (2) will the quartz double-furnace tube of reacting furnace (1) is inside and outside to be divided into interior passageway and outer passageway, be provided with first air inlet (4) and second air inlet (5) on the interior passageway, be provided with gas outlet (6) on the outer passageway, the top of reacting furnace (1) is provided with the feed inlet, the feed inlet top is provided with multilayer graphite base (3), multilayer graphite base (3) get into through elevating system the feed inlet reacts, be provided with first coil (7) and second coil (8) on the outer pipe wall of reacting furnace (1) from top to bottom respectively, the first coil (7) and the second coil (8) are used for heating the reaction furnace (1);
the first gas inlet (4) is used for introducing nitrogen, the second gas inlet (5) is used for introducing argon or helium, the gas outlet (6) is connected with a vacuum pipeline, gas enters the reaction furnace (1) through the inner channel and is discharged out of the reaction furnace (1) through the outer channel;
the multilayer graphite base (3) comprises a base body (33), the base body (33) comprises a multilayer base, a quartz base material (34) is arranged on each base surface (32), a groove is formed in the center of the quartz base material (34) and used for filling titanium oxide doped spin-on glass (35), a graphite hanger (31) is arranged above the base body (33), and the graphite hanger (31) is connected with the lifting mechanism to realize the up-and-down lifting of the multilayer graphite base (3); the multilayer graphite base (3) is also provided with a rotating mechanism, and the rotating mechanism is used for rotating the multilayer graphite base (3) to ensure that the multilayer graphite base (3) is heated uniformly;
the number of the first coil (7) and the second coil (8) can be respectively the number of the multi-zone heating coils which are gradually changed from top to bottom, and the end view is determined by the temperature gradient requirement from top to bottom.
2. The curing apparatus of claim 1, wherein the first coil (7) is a dc coil, and the first coil (7) is maintained at a temperature of less than 1100 ℃ by resistance heating.
3. The curing apparatus for a titania-doped spin-on-glass according to claim 1, wherein the second coil (8) is a dc + rf coil, and the second coil (8) is maintained at a temperature of less than 1700 ℃ by resistance + electromagnetic heating.
4. The curing apparatus for titanium oxide-doped spin-on-glass according to claim 1, wherein the multilayer graphite susceptor (3) is entirely made of graphite.
5. The curing apparatus for titania-doped spin-on glass according to claim 1, wherein the quartz double furnace tube and the quartz partition plate (2) are of an integrally formed design.
6. The curing apparatus for titania-doped spin-on-glass according to claim 1, wherein the quartz double furnace tube and the quartz partition plate (2) are two independent structures.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110864294.2A CN113737278B (en) | 2021-07-29 | 2021-07-29 | Titanium oxide-doped spin-on glass curing device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110864294.2A CN113737278B (en) | 2021-07-29 | 2021-07-29 | Titanium oxide-doped spin-on glass curing device |
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| CN113737278B true CN113737278B (en) | 2022-05-03 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
| CN104995557A (en) * | 2013-02-11 | 2015-10-21 | 赫罗伊斯石英玻璃股份有限两合公司 | Blank of TiO2-SiO2 glass for a mirror substrate for use in EUV lithography and method for the production thereof |
| CN112359422A (en) * | 2020-10-15 | 2021-02-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor processing equipment |
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- 2021-07-29 CN CN202110864294.2A patent/CN113737278B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102465333A (en) * | 2010-11-18 | 2012-05-23 | 南京大学 | Vertical hydride vapor phase epitaxy growth system |
| CN104995557A (en) * | 2013-02-11 | 2015-10-21 | 赫罗伊斯石英玻璃股份有限两合公司 | Blank of TiO2-SiO2 glass for a mirror substrate for use in EUV lithography and method for the production thereof |
| CN112359422A (en) * | 2020-10-15 | 2021-02-12 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor processing equipment |
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